Devitrification characteristics of GexSe1−x glasses

Amorphous Ge_xSe_1?x compounds have been prepared and carefully characterized in the range 0 ? x ? 0.43 (density and micro-hardness measurements and DTA experiments). By heating samples from the amorphous phase, the crystallization process has been investigated for 0.15 ? x ? 0.30. An immiscibility gap in the vitreous region is determined by optical microscopy, from phase-separation observations; moreover, a new metastable crystalline phase appearing as an intermediate step between phase separation and stable GeSe₂ is described.     

Composition dependence of the refractive index and its photo-induced variation in the binary glass systems: Ge1−xSex and As1−xSex

The composition dependence of the refractive index and its photo-induced variation have been calculated for the Ge_1?xSe_x and As_1?xSe_x binary glass systems, using the random network model. It is found that the refractive index has a minimum in Ge_1?xSe_x at x = 0.8, while it shows a monotomic increase with increasing As content in As_1?xSe_x glasses. The refractive index of the Ge_1?xSe_x system decreases with illumination and the variation Δn of GeSe₂ is ?0.0316, while the refractive index of the As_1?xSe_x system increases with illumination and the variation of As₂Se₃ is 0.01. These results are in agreement with the experimental results reported by several workers.     

Effect of annealing on an amorphous GexTe1−x matrix with Te cristallites

Annealing shows very different behaviour for Te crystallites in an amorphous Ge_xTe_1?x matrix as a function of x (x = 0.1 … 0.5). For x ? 0.2, annealing at increasing temperatures increases the number (size) of the Te crystallites with subsequent GeTe + Te crystallization. However for x ? 0.3 there is first a disappearance of Te crystallites, then an appearance of GeTe crystallites, and subsequently GeTe + Te crystallization. Crystallites of either Te or GeTe act as extrinsic defects which add to the intrinsic ones. Activatioon energy decreases (increases) and conductance increases (decreases) as the number of defects increases (decreases). In all cases the final metallic state is obtained only when both GeTe and Te crystallites are present.     

AlxGa1−xN bulk crystal growth: Crystallographic properties and p–T phase diagram

The recent results on the growth of the Al_xGa_1−xN bulk single crystals (0.22≤x≤0.91) from solution in liquid Ga under high nitrogen pressure are discussed. We focus on the influence of temperature and the choice of the Al source on the crystal growth. The experiments involving different sources of aluminum such as Al metal, pre-reacted polycrystalline Al_yGa_1−yN and AlN powder are compared. The best results were achieved using pre-reacted polycrystalline Al_yGa_1−yN or/and AlN. Single-crystal structure refinement data of these Al_xGa_1−xN crystals are presented. We also update the p–T phase diagram of (Al,Ga)N compound at high N₂ pressure for various Al content, which is the basis for (Al,Ga)N synthesis.     

Infrared studies of Se-based polynary chalcogenide glasses (II): YxZxSe100−2x (Y = Ge,As; Z = As,Te)

The infrared (IR) absorption spectra for Y_xZ_xSe_100?2x glasses (Y = Ge, As;Z = As, Te), x = 2.5 and 5.0 are measured in the wavenumber region 700-60 cm^?1 at room temperature. These IR spectra are explained by comparing with the IR spectra already reported for the binary glasses such as Ge–Se, As–Se and Se–Te. In Ge_xAs_xSe_100-2x glasses (x ? 5.0), the main spectral features as well explained by both the spectra of Ge_xSe_100?x and As_xSe_100?x glasses. Main structural units in these glasses are considered to be GeSe₄ tetrahedra and AsSe₃ pyramids, and Se₈ rings and Se_n chains which are the units in pure glassy Se. In Ge_xTe_xSe_100?2x glasses (x ? 5.0) and IR band which cannot be explained by either the spectra of Ge_xSe_100?x or Se_100?xTe_x glasses appears at 210 cm^?1. This band is considered to be due to Ge–Te bonds. The IR spectra of As_xTe_x Se_100?2x glasses (x ? 5.0) are well explained by both the spectra of As_xSe_100?x and Se_100?xTe_x glasses. It is concluded that As and Te atoms combine with Se atoms in the forms of AsE₃ pyramids and Se₅Te₃ mixed rings, respectively.     

Change of short-range order with temperature and composition in liquid GexSe1−x as shown by density measurements

Density measurements were performed on melts of the binary chalcogenide system Ge_xSe_1?x (0 ? x ? 0.5) up to 1000°C. The isotherm of molar volumes V_m at 750°C shows a relative maximum near GeSe₂. Molar volumes of the system behave linearly between GeSe and Se at 1000°C. V_m's of melts between x = 0.30 and x = 0.35 decrease at high temperatures on heating. The anomalous density behaviour of the melts clearly shows a change of short-range order from a less to a more densely packed structure, caused by the development of a pσ-bonding system. Within the composition range $\text{0 ? x ?}\text{1}\text{3}$ the short-range order at lower temperatures is determined mainly by $\text{GeSe}{}_{\mathrm{<mtext>4</mtext><mtext>2</mtext>}}$ tetrahedra linked directly corner-to-corner or via Se atoms. At higher temperatures pσ bonds arise more and more, even in melts rich in selenium. Within the composition range $\text{1}\text{3}\text{? x ? 0.5}$ the short-range order is mainly determined by a distorted octahedral configuration, even at lower temperatures. From the short-range orders of melts and from crystalline structures of GeSe₂ and GeSe, the tendency of glass formation from the melt is discussed in detail.     

X-ray investigation of the crystallization of chalcogenide glasses of the type (As2Se3)1−x:(Tl2Se)x

Amorphous and crystalline states of As₂Se₃, (As₂Se₃)₃ : Tl₂Se and As₂Se₃ : Tl₂Se have been studied using X-ray diffraction techniques. Structural changes arise during the process of annealing in the temperature range between their softening and melting points are reported and their rates investigated. The crystallization temperatures were found to be 105 ± 5 °C, 135 ± 5 °C and 180 ± 5 °C respectively. The unit cell parameters are identified for each of the three resulting crystalline phases, that for As₂Se₃ : Tl₂Se being orthorhombic while the other two are monoclinic.     

Raman and infrared spectra of As2Sx chalcogenide glasses with x ⩽ 3

Raman laser and far infrared spectra of As₂S_x glasses with x ? 3 are given and discussed. The purpose of the work is to bring a vibrational spectroscopic contribution to the study of these glasses and to the hypothesis, still under discussion in the literature, that they might be constituted either by a homogeneous vitreous phase or by a mixture of As₂S₃ and As₄S₄.Our results confirm a phase separation, with formation of ß-As₄S₄, below a certain value of x, which depends not only on the preparation method of the samples but also on other factors such as melting time. Laser irradiation of ß-As₄S₄ modifies its Raman spectrum. Such a phenomenon is attributable to two principal factors, either a partial polymerization or formation of a species richer in arsenic. A structural and formation model of the As₂S_x glasses is given, starting from a more generalized structural model of vitreous As₂S₃ which is an accord with the vibrational results and those by the diffraction method in the literature.     

ac Conductivity of 4.5 TiO2−x · 2 P2O5

The ac conductivity of a member of the family of glasses 4.5 TiO_2?x · 2 P₂O₅ has been measured between 77 and 300 K, and up to 100 kHz. The dc conductivity was measured over only part of this temperature range. The measured ac conductivity can be represented by σ_ac = σ₀ + σ₁ω^s, with s < 1, and temperature dependent. A similar equation describes the ac dielectric constant, ?_ac = ?₀ + ?₁ω^s?1, where $\text{?}{}_1\text{= σ}{}_1\text{tan}\text{1}\text{2}\text{sπ}$. A simple proportionality of s to temperature holds at low temperature; at the higher temperatures, the T-dependence of s is no longer simple. The observed behaviour of the ac properties of this glass is in general accordance with a recently proposed model for systems where transport occurs by hopping. The over-all behaviour is comparable to other transition metal glasses.Using the model and treating the carriers as polarons yields an expression for s in terms of temperature. Values for the polaron radius and the effective dielectric constant are then extracted from the measurements. These values are in good agreement with values for similar systems obtained by other means.     

Change of bonding system in liquid SexTe1−1 alloys as shown by density measurements

Density measurements have been performed on melts in the binary chalcogenide system Se_xTe_1?x up to a temperature of 950°C. Anomalous behaviour of the density was observed. At higher temperatures the density increased on raising the temperature up to a maximum whose position shifts to lower temperatures with increasing concentration of tellurium. This anomalous density behaviour clearly shows an increase of the average coordination number of atoms in the melt. This increase of CN is caused by a change of the bonding system because of the tendency of Te to form pσ bondings. It was assumed that there exist two distinct structures in thermodynamical equilibrium at each temperature according to a law of mass action, for which cooperation effects have to be taken in account. At low temperatures Te atoms easily accept a loosely packed structure I with the aid of selenium. At high temperatures even Se atoms develop a more densely packed structure II with the aid of Te.     

Template free-solvothermaly synthesized copper selenide (CuSe,Cu2−xSe, β-Cu2Se and Cu2Se) hexagonal nanoplates from different precursors at low temperature

Nonstoichiometric (Cu_2−xSe) and stoichiometric (CuSe, β-Cu₂Se and Cu₂Se) copper selenide hexagonal nanoplates have been synthesized using different general and convenient copper sources, e.g. copper chloride, copper sulphate, copper nitrate, copper acetate, elemental copper with elemental selenium, friendly ethylene glycol and hydrazine hydrate in a defined amount of water at 100 °C within 12 h adopting the solvothermal method. Phase analysis, purity and morphology of the product have been well studied by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), high resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray diffraction (EDAX) techniques. The structural and compositional analysis revealed that the products were of pure phase with corresponding atomic ratios. SEM, TEM and HRTEM analyses revealed that the nanoplates were in the range 200–450 nm and the as-prepared products were uniform and highly crystallized. The nanoplates consisted of {0 0 1} facets of top–bottom surfaces and {1 1 0} facets of the other six side surfaces. This new approach encompasses many advantages over the conventional solvothermal method in terms of product quality (better morphology control with high yield) and reaction conditions (lower temperatures). Copper selenide hexagonal nanoplates obtained by the described method could be potential building blocks to construct functional devices and solar cell. This work may open up a new rationale on designing the solution synthesis of nanostructures for materials possessing similar intrinsic crystal symmetry. On the basis of the carefully controlled experiments mentioned herein, a plausible formation mechanism of the hexagonal nanoplates was suggested and discussed. To the best of our knowledge, this is the first report on nonstoichiometric (Cu_2−xSe) as well as stoichiometric (CuSe, β-Cu₂Se and Cu₂Se) copper selenide hexagonal nanoplates with such full control of morphologies and phases by this method under mild conditions.     

Crystal and magnetic structures of the Bi1 ? xSrxFeO3 ? δ and Bi1 ? xAxFe1 ? xMnxO3 (A = Sr, Ca) solid solutions

Bi_{1 − x} Sr _x FeO_{3 − x/2} (I), Bi_{1 − x} Sr _x Fe_{1 − x} MnxO₃ (II), and Bi_{1 − x} Ca _x Fe_{1 − x} Mn _x O₃ (III) solid solutions have been obtained. Their magnetization has been measured by X-ray and neutron diffraction and M?ssbauer spectroscopy. According to the M?ssbauer spectroscopy data, iron ions are in the trivalent state in system I. Near the concentration x ≈ 0.2, rhombohedral distortions (sp. gr. R3c) are transformed into tetragonal (P4/mmm). The symmetry of system II changes at x > 0.2 (R3c → R3c), whereas orthorhombic distortions (R3c → Pbnm) arise in system III at x > 0.2. The magnetic structure is antiferromagnetic (of G type). The samples of systems II and III exhibit weak ferromagnetism at x > 0.2 due to the Dzyaloshinski-Moriya interaction.     

The electrical and structural properties of InyGa1 ? yAs/InxAl1 ? xAs/InP quantum wells with different InAs content

In _x Al_{1 − x} As/In _y Ga_{1 − y} As/In _x Al_{1 − x} As/InP HEMT structures has been investigated with a change in the InAs molar fraction both in the quantum well and the buffer layer. The electrical parameters of the samples are measured at different temperatures. The structural parameters of the layers and the characteristics of the interfaces between them are determined by double-crystal X-ray diffraction. An increase in the Hall mobility and electron concentration, as well as in the structural quality of the samples, is observed alongside an increase in the InAs molar fraction in the quantum well. It is established that high electron mobility is retained at small (to 5%) mismatches between the buffer layer and substrate.     

Invar effect in n-Nb2O5, αht-Nb2O5, and L-Nb2O5

An X-ray diffraction analysis of two commercial sets of niobium pentaoxide (Nb₂O₅) of Nbo-Pt grade has been performed. Each set reveals the coexistence of three modifications: n-Nb₂O₅, α_ht-Nb₂O₅, and L-Nb₂O₅. Anomalous behavior in the structural characteristics, with the occurrence of plateaus upon heating (the invar effect), is established for each phase. It is suggested that the coincidence of the temperature ranges with constant unit-cell parameters in Nb₂O₅ and complex Nb-containing oxides indicates the unified nature of the invar effect, which is related to the defect state of objects under study. Original Russian Text ? L.A. Reznichenko, V.V. Akhnazarova, L.A. Shilkina, O.N. Razumovskaya, S.I. Dudkina, 2009, published in Kristallografiya, 2009, Vol. 54, No. 3, pp. 517–526.     

Ionic conductivity of congruently melting Ca0.6Sr0.4F2 and Ca1 ? x ? ySryRxF2 + x (R = La, Ce, Pr, Nd) single crystals with fluorite structure

Single crystals of congruently melting compositions of the Ca_0.6Sr_0.4F₂ and Ca_{1 − x − y} Sr _y R _x F_{2 + x} (R = La, Ce, Pr, Nd; x = 0.16–0.21; y = 0.07–0.16) solid solutions with fluorite structure have been grown by the Bridgman-Stockbarger method. Their electrical properties have been investigated in the range from 473 to 823 K, and it is shown that they are ionic conductors. For Ca_0.6Sr_0.4F₂ crystals, the ionic conductivity σ = 2 × 10⁻⁶ S/cm at 673 K, and the ion transport activation energy E _a = 1.1 eV. For Ca_0.77Sr_0.07La_0.16F_2.16, Ca_0.70Sr_0.11Ce_0.19F_2.19, Ca_0.65Sr_0.15Pr_0.20F_2.20, and Ca_0.58Sr_0.21Nd_0.21F_2.21 crystals, the values of σ lie in the range from 9 × 10⁻⁷ to 2 × 10⁻⁶ S/cm at 500 K, and the activation energy E _a is 0.88–0.93 eV. The concentration and mobility of ionic charge carriers in Ca_{1 − x − y} Sr _y R _x F_{2 + x} crystals have been calculated. Original Russian Text ? N.I. Sorokin, D.N. Karimov, E.A. Krivandina, Z.I. Zhmurova, O.N. Komar’kova, 2008, published in Kristallografiya, 2008, Vol. 53, No. 2, pp. 297–303.     

自润滑Al2O3/TiC/CaF2复合陶瓷材料摩擦特性

为了探索自润滑陶瓷材料的开发及应用,采用冷压烧结工艺制备Al2O3/TiC/CaF2自润滑复合陶瓷材料。在摩擦磨损实验机上对其进行摩擦磨损实验,并对其摩擦磨损行为及自润滑效应进行分析。结果表明:在实验过程中,Al2O3/TiC/CaF2复合陶瓷材料物理机械性能优于同条件下制备的Al2O3/TiC复合陶瓷材料,且具有较低的摩擦因数和磨损率,其减摩抗磨效果明显,具有一定的自润滑效应,其减摩抗磨机理为摩擦驱动下CaF2存在于摩擦副表面,形成减摩抗磨层,在表面形成一层平整、光滑的自润滑层,增加摩擦表面实际接触面积,起到自润滑效应。     

Ti/SnO2 +Sb2Ox/PbO2耐酸阳极的寿命及电催化性能

用电沉积法制备了Ti/SnO2 +Sb2Ox/PbO2耐酸阳极,采用交流阻抗法测定了电极的导电性,利用加速寿命实验测定了电极的加速使用寿命,同时引入循环伏安新方法定量考察不同Sb掺杂物质的量分数对电极表面分形维数的影响,并且讨论了电极在酸性溶液中的析氧电催化性能。结果表明,Sb掺杂物质的量分数在0.02和0.10时Ti/SnO2 +Sb2Ox/PbO2电极的分形维数较高,表明电极表面粗糙程度较大,析氧电催化性能较好,是优良的高析氧电位下的阳极材料,适用于阳极氧化获得产品的电极过程。Sb掺杂物质的量分数为0.06时Ti/SnO2 +Sb2Ox/PbO2电极的导电性最好,加速使用寿命达到89 h。因此,Ti/SnO2 +Sb2Ox/PbO2电极是酸性溶液中较好的阳极材料。     

X-ray diffraction study of p -(alkoxybenzylidene)- p ′-toluidines C2H5O-C6H4-CH=N-C6H4-CH3 and C4H9O-C6H4-CH=N-C6H4-CH3

The molecular and crystal structures of two p-alkoxybenzylidene)-p′-toluidines C₂H₅O-C₆H₄-CH=N-C₆H₄-CH₃ (1) and C₄H₉O-C₆H₄-CH=N-C₆H₄-CH₃ (2) are determined by X-ray diffraction. Crystals 1 and 2 contain four and two crystallographically independent molecules, respectively. In 1, the geometry of the independent molecules is almost identical. In 2, the independent molecules differ in the conformation of the alkyl chain, which is disordered in one of them. An analysis of the crystal packing of 2 reveals the alternation of spacious layers formed by loosely packed aliphatic fragments of molecules and layers of closely packed aromatic fragments, which ensures the formation of the mesogenic phase in the course of melting of crystals 2. In crystal 1, loose aliphatic layers are absent. Original Russian Text ? L.G. Kuz’mina, N.S. Kucherepa, M.N. Rodnikova, 2008, published in Kristallografiya, 2008, Vol. 53, No. 6, pp. 1072–1078.