Aluminium diffusion in titanium nitride films. Efficiency of TiN barrier layers

Two kinds of reactively evaporated titanium nitride films with columnar (B ₀ films) and fine-grained (B ₊ films) film structures, respectively, have been examined as diffusion barriers for preventing aluminium diffusion. The aluminium diffusion profiles have been investigated by 2 MeV ⁴He⁺ Rutherford backscattering spectrometry (RBS) at temperatures up to 550° C. The diffusivity from 300° C to 550° C is: D[m²s^–1]=3×10^–18 exp[–30/(RT)] in B ₀ layers and D[m²s^–1]=1.4×10^–16 exp[–48/(RT)] in B ₊ TiN layers. The activation-energy values determined indicate a grain boundary diffusion mechanism. The difference between the diffusion values is determined implicitly by the microstructure of the layers. Thus, the porous B ₀ layers contain a considerable amount of oxygen absorbed in the intercolumnar voids and distributed throughout the film thickness. As found by AES depth profiling, this oxygen supply allows the formation of Al₂O₃ during annealing the latter preventing the subsequent diffusion of the aluminium atoms.     

Volume and grain boundary diffusion of implanted 113Sn in aluminium

Volume and grain boundary diffusion of ¹¹³Sn in aluminium was investigated with the radiotracer method. The implantation technique was used for tracer deposition to avoid problems of tracer hold-up caused by the oxide layer always present on aluminium. The diffusion penetration was chosen large enough to permit serial sectioning of samples with the aid of a microtome.The temperature dependence of the volume diffusivity was determined as D(T)=4.54×10^–5×exp[–(114.5±1.2)kJmol^–1/RT] m ² s ^–1. This confirms previous measurements from our group which already showed that Sn is the fastest foreign metal diffusor so far investigated in aluminium.Grain boundary diffusion of ¹¹³Sn in Al polycrystals was measured in the type-B kinetic regime. The grain boundary diffusion product P=sD _gb (s=segregation factor, =grain boundary width, D _gb=grain boundary diffusivity) was found to be strongly affected by the impurity content of aluminium. For Al polycrystals of 99.9992% nominal purity we obtained P _5N(T)=1.08×10^–8exp [–(96.9±7.5) kJ mol^–1/RT] m³ s^–1 and for less pure Al polycrystals of 99.99% nominal purity P _4N(T)=3.0×10^–10 exp [–(90.1±4.2) kJ mol^–1/RT] m³ s^–1 was determined. The grain boundary diffusion product in the purer material is more than one order of magnitude higher than in the less pure material. Very likely this is an effect of co-segregation of non-diffusant impurities into the grain boundaries.     

Grain Boundary Diffusion and Segregation in Interstitial Solid Solutions Based on BCC Transition Metals: Carbon in Niobium

Bulk and grain boundary (GB) diffusion of ¹⁴C in Nb has been studied by the radiotracer serial sectioning technique. B and C kinetic regimes were realized for GB diffusion in the temperature range from 800 to 1173 K. The values of P = sD _gb, D _gb and s follow the Arrhenius dependencies: P = 5.15 × 10^–15 exp[–(83.1 kJ/mol)/RT] m³/s (973–1173 K), D _gb = 2.3 × 10^–6 exp[–(133.0 kJ/mol)/RT] m²/s (800–950 K), and s = 4.7 exp[(49.9 kJ/mol)/RT].The increase in the GB diffusion compared with self-diffusion is very large despite the probable retardation effect due to the strong segregation.The results for GB diffusion of C in Nb as well as for other interstitial solutes (P, S) in bcc transition metals (- Fe, Mo) are discussed in the framework of the transition state theory. It is assumed that GB segregation decreases the energy of the ground state whereas the change in the diffusion mechanism (e.g. from vacancy to interstitial) leads to a strong decrease of the transition state energy. This change in the diffusion mechanism results in a fast GB diffusion of interstitial solutes in spite of their large tendency to segregate to GBs.     

Diffusion of chromium and manganese in γ-TiAl

The γ-TiAl intermetallic compound with suitable alloying additions has shown considerable promise as a material for high-temperature applications. Diffusion studies in this alloy system are useful in assessment of their creep behaviour and structural stability in service conditions. Tracer diffusion coefficients of ⁵¹Cr and ⁵⁴Mn in a γ-TiAl intermetallic compound containing 54.1 at. % aluminium were determined in the temperature range from 1095 to 1470?K. The temperature dependence of both the diffusing species follows a linear Arrhenius behaviour and can be expressed as D _Cr?=?4.4?×?10^?3exp(?350?kJ?mol^?1/RT)?m^2?s^?1 and D _Mn?=?1.2?×?10^?3?×exp(?326?kJ?mol^?1/RT)?m^2?s^?1. The data are analysed on the basis of empirical correlations between the diffusion and melting parameters applicable for conventional mono-vacancy diffusion mechanism in metals. It is concluded that impurity diffusion in γ-TiAl occurs through the migration of thermal vacancies via nearest-neighbour or next-nearest neighbour jumps.     

Grain boundary diffusion of Cu in TiN film by X-ray photoelectron spectroscopy

In this study, the grain boundary diffusion of Cu through a TiN layer with columnar structure was investigated by X-ray photoelectron spectroscopy (XPS). It was observed that Cu atoms diffuse from the Cu layer to the surface along the grain boundaries in the TiN layer at elevated temperature. In order to estimate the grain boundary diffusion constants, we used the surface accumulation method. The diffusivity of Cu through TiN layer with columnar structure from 400 °C to 650 °C is D_b≈6×10⁻¹¹exp(−0.29/(k_BT )) cm²/s. Received: 18 May 1999 / Accepted: 8 September 1999 / Published online: 23 February 2000     

Surface Ostwald-ripening and evaporation of gold beaded films on sapphire

The kinetics of morphological evolutions of gold nanoparticles on alumina, resulting from evaporation and surface Ostwald-ripening coarsening, have been investigated by means of Auger electron spectroscopy. When the fraction of the covered area is small, the kinetics of evaporation can be related to the desorption of adatoms. In the temperature range 943–1043 K we obtained the evaporation flux J(m^-2s^-1)=4.8×10²⁷exp[-196±9 (kJ/mol)/RT]. The experimental activation energy of evaporation of gold from a sapphire surface, Q_evap=196±9 kJ/mol, is lower than the tabulated value of enthalpy of sublimation of gold, ΔH_subl=368 kJ/mol. At lower temperatures, in the range 623–778 K, Ostwald-ripening experiments, carried out on nanosized clusters, yield the mass transfer surface diffusion coefficients of gold on alumina, D_s(m²/s)=2.6×10^-14exp[-58±9 (kJ/mol)/RT]. These results, providing information on the evolution of granular gold films such as those used in catalysts or sensors, are compared to previous data on similar systems. PACS 68.47.Jn; 68.43.Jk; 68.55.-a     

Au diffusion in α-Ti

The solubility and diffusion of Au in -Ti have been studied in a 823–1023 K temperature range using the Rutherford backscattering technique. For this purpose we have implanted Au into -Ti samples. Our results show that the solubility of Au varies between 0.2 and 0.35 at.%. In addition, we found that the diffusion coefficients follow a normal Arrhenius behavior with Q=260 kJ/mol and D _o=1.9×10^–5 m²/s¹. These values are typical for a substitutional diffusion mechanism.     

Diffusion of gold in dislocation-free or highly dislocated silicon measured by the spreading-resistance technique

The diffusion of Au in dislocation-free or plastically deformed Si (10¹¹ to 10¹³ dislocations/m²) was measured with the aid of the spreading-resistance technique. The Au profiles produced indislocation-free Si slices by in-diffusion from both surfaces possess nonerfc-type U shapes as predicted by the so-called kick-out diffusion model. This model is used to calculate the contribution of self-interstitials to the (uncorrelated) Si self-diffusion coefficient,D _I ^SD =0.064×exp(–4.80 eV/kT)m² s^–1, from the present and previous data on the diffusivity and solubility of Au in Si in the temperature range 1073–1473 K. Inhighly dislocated Si the diffusion of Au is considerably faster than in dislocation-free Si. From the erfc-type penetration profiles found in this case, effective Au diffusion coefficients were deduced and combined with data on the solubility of Au in Si. ThusC _i ^eq D _i=0.0064 ×exp(–3.93 eV/kT)m² s^–1 was obtained in the temperature range 1180–1427 K, whereC _i ^eq andD _i are the solubility and diffusivity of interstitial Au in Si.     

Diffusion study of nitrogen implanted into <Emphasis Type="Italic">α</Emphasis>-Hf using the nuclear resonance technique

The diffusion of nitrogen in α-Hf was studied in the temperature range of (823–1123) K using the ion implantation and nuclear resonance techniques. The measurements show that the diffusion coefficients follow the Arrhenius behavior D(T)=D ₀exp (−Q/RT) with D ₀=(5.5±2.1)×10⁻⁷ m²/s and Q=(228±1) kJ/mol. A comparison of the present results with the previous one is done.     

Analogous study in low magnetic field between Cu–Ge and Cu–Si ferrites

Two series of mixed copper ferrites, Cu_1+x Ge_x Fe_2−2x O₄ and Cu_1+x Si_x Fe_2−2x O₄, have been analogously investigated for x=0.0, 0.05, 0.1, 0.15, 0.2, 0.25 and 0.3. The two systems were prepared using the standard ceramic techniques. X-ray diffraction analysis indicates that both systems formed in a single phase cubic spinel structure. The lattice parameter has a constant value (0.838 nm±0.001) for the two series. The grain diameter was estimated from the scanning electron microscope micrographs for the two series. Some magnetic properties were measured at room temperature. The magnetization M was measured in the range of magnetizing field up to 5500 Am⁻¹. The relative permeability (μ_r) was calculated from the B–H relation. The B–H loops were measured at constant magnetizing current (I=2.5 A which is equivalent to 900 Am⁻¹). Also, the hystersis area and the magnetic parameters B_r, B_s, m_R (B_r/B_s) and apparent energy loss (E) were estimated from the B–H loops; μ_r, B_r, B_s and E are composition dependent.     

Boron neutralization and hydrogen diffusion in silicon subjected to low-energy hydrogen implantation

Using the hydrogen neutralization of the boron acceptor, the diffusion of hydrogen is investigated in the temperature range 20 °–160 °C. The hydrogenation is performed by low-energy implantation. We observe a fast initial hydrogen migration, followed by a long-time diffusion phase that is described by an effective diffusion coefficientD _eff=D _{0 eff} exp(–E _a/kT) withD _{0 eff}–cm²s^–1 andE _a=(0.83±0.05) eV. No deeper hydrogen migration is detected for implantation times longer than – 30 min. Our data are explained by the build-up of a large amount of molecular hydrogen beneath the surface, which strongly hinders the transfer of the implanted hydrogen to the bulk. The thermal reactivation kinetics of the neutralized boron show a rapid initial step followed by a longtime thermally activated second order phase, which is limited by the recombination of hydrogen into molecules.     

Dynamic recrystallization of austenite during hot plastic deformation

The kinetics of dynamic recrystallization is dependent on the thermomechanical conditions in which plastic deformation is taking place. To determine the timet _p needed for the onset of dynamic recrystallization, experimental work was performed on low-carbon austenite to check the validity of the equationW= 2·1 × 10^–1 Z ^–0.94, whereW= t_pexp(–Q/RT),Z represents the Zener-Hollomon parameter, and Q=276 kJ mol^–1.     

Tracer Diffusion of 63Ni in Nano-γ-FeNi Produced by Powder Metallurgical Method: Systematic Investigations in the C, B, and A Diffusion Regimes

⁶³Ni radiotracer diffusion in a well-compacted nanocrystalline (grain size d 80 to 100 nm) -Fe–40wt%Ni alloy was measured by the serial sectioning technique in an extended temperature range from about 610 to 1010 K. Since the material microstructure reveals two different length scales with nano-size grains forming micrometer-size clusters (or agglomerates), three main diffusion paths determine the diffusion behavior: the nanocrystalline grain interior, the nanocrystalline grain boundaries (GB), and the inter-agglomerate interfaces. The systematics of diffusion in a compacted nanostructured material with such a bimodal distribution of interface characteristics was elaborated and the experimental data were analyzed in dependence on the diffusion regime. The absolute values and the Arrhenius parameters of Ni GB diffusion in the nano--Fe–40wt%Ni alloy (D ₀ = 9.3 × 10^–4 m² s^–1 and Q = 177 kJ/mol) are similar to the Ni GB diffusivity in coarse-grained poly-crystalline -Fe. Accordingly, the nanocrystalline GBs are concluded to have quasi-equilibrium structures, particularly because of a pronounced grain growth (from about 30 to about 100 nm) during the production stage of the nanomaterial. In contrast, the inter-agglomerate interfaces, which present the fastest diffusion path in the present investigation (D ₀ = 1.9 × 10^–3 m² s^–1 and Q = 134 kJ/mol), are likely to be in a non-equilibrium state due to specific features of the applied powder metallurgical process.     

Strong decays of P-wave mixing heavy-light 1~+ states

Many P-wave mixing heavy-light 1~+ states have not yet been discovered by experiment, while others have been discovered but without width information, or with large uncertainties on the widths. In this paper, the strong decays of the P-wave mixing heavy-light 1~+ states D0, D~±, D~±s, B0, B~±and Bs are studied by the improved BetheSalpeter(B-S) method with two conditions of mixing angle θ: one is θ = 35.3?; the other is considering a correction to the mixing angle θ =35.3?~+θ_1. Valuable predictions for the strong decay widths are obtained: Γ(D′01)=232 MeV,Γ(D01)=21.5 MeV, Γ(D′_1~±.)=232 MeV, Γ(D_1~±)=215 MeV, Γ(D′_(s1)~±)=0.0101 MeV, Γ(D~±s1)=0.950 MeV, Γ(B′_1~±)=263 MeV, Γ(B~±1) = 16.8 MeV, Γ(B′s1) = 0.01987 MeV and Γ(B_(s1)) = 0.412 MeV. It is found that the decay widths of D~±s1 and Bs1 are very sensitive to the mixing angle. The results will provide theoretical assistance to future experiments.     

An optical bridge reflectometer for sensitive measurement of ion implantation dose

An instrument is described that can be used to monitor, with unprecedented sensitivity, changes in the optical reflectivity due to crystailine damage incurred during ion implantation. It is shown that at the shot-noise limit, changes in the optical reflectivity of silicon as small as 5·10^–7 can be measured in a 10 Hz bandwidth with a signal-to-noise ratio of 100, corresponding to an extrapolated uniform implantation dose of 5·10⁸ cm^–2 for ¹¹B⁺ at 50 keV in silicon.     

Changes in electrical properties in α- and γ-exposed PADC track detector

The changes in the dielectric properties and temperature dependence of the d.c. conductivity of α-exposed poly allyl diglycol carbonate (PADC) have been studied. On α-irradiation the dielectric constant (′) as a function of frequency has been found to decrease significantly. The temperature dependence of resistivity in pristine and γ-irradiated samples is of the form ρ(T)=ρ_∝ exp(T₀/T) which can be attributed to conduction of thermally generated carriers. In case of (γ+α) irradiated samples the temperature dependence of resistivity is of the form ρ(T)=ρ_∝ exp(T₀/T)^1/2 which is due to one-dimensional hopping of carriers.     

Diffusion of titanium atoms in Ni-Si-B metallic glass

The diffusion ot Ti atoms in the Ni₇₇Si₃B₂₀ metallic glass was studied by the Auger electron spectroscopy. The temperature dependence of the diffusion coefficient obeys the Arrhenius relation with the activation energyE=1·7 eV and the pre-exponential factorD ₀=0·86 × ×10^–4 m² s^–1. Possible mechanisms of the atomic transport in metallic glasses are discussedThe authors wish to thank Dr. P. Duhaj for providing the metallic glass samples.     

Oxygen diffusion and thermal donor formation in silicon

The information available on the diffusion of oxygen and on the formation of thermal donors in silicon is critically reviewed. In this context the effects of intrinsic point defects on the diffusion-controlled growth of oxygen precipitates is investigated in some detail. Seemingly contradictory experimental results on the diffusivity of oxygen in silicon at temperatures around 400° C are explained in terms offast-diffusing gas-like molecular oxygen in silicon. The concept of molecular oxygen is also invoked in a newly suggested model of thermal donor formation in silicon. The diffusivity of molecular oxygen in silicon is estimated to be around 10^–9cm²s^–1 at 450° C, almost nine orders of magnitude higher than the diffusivity of atomic oxygen in interstitial position.     

Consolidation of hydrogenation–disproportionation–desorption–recombination processed Nd–Fe–B magnets by spark plasma sintering

We have successfully consolidated hydrogenation–disproportionation–desorption–recombination (HDDR) processed Nd–Fe–Co–Zr–B–Ga powder by spark plasma sintering (SPS). The field compacted samples were sintered at different temperatures (T_S) from 550 to 600 °C with compressive pressure of 80 MPa for 20 min. Microstructural investigations by transmission electron microscopy indicated that the sintered specimen exhibits Nd₂Fe₁₄B grains of ~300 nm with Nd-rich grain boundary phase. The optimum magnetic properties of B_r: 1.22 T, H_c: 928 kA/m, _BH_c: 600 kA/m, (BH)_max: 210 kJ/m³ were obtained in the sample sintered at 550 °C. The strategy for further improving the coercivity and remanence is discussed based on the microstructure-property relationships.     

NMR self-diffusion study of organic glasses: COANP,MBANP, PNP,NPP

A pulsed field gradient proton spin-echo NMR self-diffusion study of organic glasses COANP, MBANP, PNP and NPP in their liquid and weakly supercooled states was performed. The NMR phase diagrams, based on the proton NMR transverse relaxation time (T ₂) temperature hysteresis data of these materials, clearly give evidence of the onset of a glass phase on cooling the isotropic liquids below their respective melting temperatures. The self-diffusion data exhibit in the supercooled glassy state a non-Arrhenius behaviour and can be described in terms of the Vogel-Fulcher modification of the Arrhenius law,D=D exp{–E _a /[k _B (T–T _VF )]}. The activation energiesE _a and Vogel-Fulcher temperaturesT _VF are 83.2 meV and 239 K for COANP, 66 meV and 249 K for MBANP, and 85 meV and 245 K for PNP, respectively. The flow viscosity data obtained for COANP in the same temperature region as well conform to the Vogel-Fulcher behaviour, exp{E _a ⁽⁾ /[k _B (T–T _VF )]}, withE _a ⁽⁾ =80.4 meV andT _VF =239 K. In case of COANPD was found to increase with decreasing diffusion time in the supercooled (glassy) melt just belowT _M whereas no such behaviour was found aboveT _M .