Current controlled negative resistance phenomenon in SbPbSe system

Thin film Al/Sb₂Pb₁Se₇/Al metal-glass-metal sandwiched structures prepared using thermal evaporation technique have been studied. The I–V measurements showed that the devices switched from high resistance OFF state to a low resistance ON state when a particular voltage appeared across it. The OFF state I–V characteristics showed non-ohmic behaviour while in the ON state the devices displayed purely linear characteristics. The switching voltage (V _th) was found to depend on film thickness and temperature of the device. A linear relation between V_th and temperature was observed.     

CO2-laser annealing of Al/a-Si:H contact

The paper concerns the possibility of using CW (continuous wave) CO₂-laser annealing (=10.6 m,P 100 W/cm²) for formation of a barrier in the Al/a-Si:H/SS (SS-stainless steel) structures with good rectifyingI–V characteristics. The infrared absorption spectra, photoelectric properties, temperature effect on the conductivity and saturation current were analyzed and various contact models are discussed.We thank P. imanec for useful and stimulating discussion, J. Stuchlík for kindly manufacturing the a-Si:H films for us and D. N. Goncharov for the aid with the measurement of the conductivity temperature dependences.     

Experience with semi-conducting detectors

The paper describes silicon detectors with a deep surface potential barrier and their use in the spectrometry of charged particles.

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Finally, the authors would like to thank Ing. . imán and S. afrata, Candidate of Science, for their constant interest in our work and their support, as well as A. Irra for carefully preparing the silicon samples.     

Two-photon resonance degenerate four-wave mixing in a three-level polar molecule (model calculations)

The third-order non-linear susceptibility, ⁽³⁾(; , , –), describing the phase conjugation by degenerate four-wave mixing (DFWM) is calculated for a three-level polar system under a two-photon resonance (TPR) condition. The part of the susceptibility expressed only by the transitional dipole moments and the part resulting from the permanent dipole moments are distinguished. The spectra of ⁽³⁾(; , , –), as well as the DFWM power-reflection and power-transmission spectra near to the TPR, are modelled for polar molecules. The effect of enhanced reflectivity of TPR-DFWM is obtained numerically.     

Semiconducting structures and devices based on gallium arsenide with deep centers

We have examined the characteristics of nontraditional gallium arsenide -v-n type device structures, in which p-n junctions are formed by doping the semiconductor with deep centers. The properties of -v-n structures are established by processes of charge trapping at deep centers under the effect of an external bias or exposure to a wide spectral range of electromagnetic radiation. The nature of formation of S-type negative differential resistance for a reverse biased -v-n structure and the mechanism of high speed switching (with a switching time of (0.4–5)×10^–10 sec) were analyzed. The results of an investigation of the effects of optical radiation, x-rays, -radiation and high energy charged particles on the structures are discussed and the characteristics of new devices constructed using -v-n structures are presented. These devices include high speed avalanche S-diodes and triodes, wide spectral band photodiodes (=0.2–10 µm) and detectors for x-rays, -radiation, and relativistic electrons.V. D. Kuznetsov Siberian Physical-Technical Institute, State University, Tomsk. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 33–44, September, 1992.     

Influence of deviation from stoichiometry on the plasticity and mechanism of fracture of the boron-alloyed intermetallic compound Ni3Al obtained by self-propagating high-temperature synthesis

We have studied the effect that deviation of the composition of an ally from stoichiometry has on the plasticity , strength _B, and the fracture mechanism of the intermetallic compound Ni₃Al obtained by self-propagating high-temperature synthesis. The variation of the tensile strength, plasticity, type of fracture, and the cohesive strength _coh of grains have been show to be correlated. The cohesive strength increases with the Al content in the alloy, most rapidly up to 24.0 at. % Al.V. D. Kuznetsov Siberian Physicotechnical Institute, Tomsk State University. Institute of Strength Physics and Materials Science, Siberian Branch, Russian Academy of Sciences. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, pp. 104–110, April, 1994.     

Light absorption by free semiconductor carriers in the presence of a laser wave

Within the framework of the conditions ; » ^–1 ( ^–1 is the mean time of momentum relaxation), the coefficient of absorption () of a weak electromagnetic wave by the free carriers of a polar semiconductor is calculated in the presence of a strong wave (of frequency ), for arbitrary values of and . Photon absorption by band electrons is due to these latter interacting with optical phonons (of frequency _o). The problem is solved by using an analogous approach to the theory of the linear Kubo reaction. The results are valid in the absence of electron heating, when a strong wave only influences the scattering probability. The appearance of a photostimulated tail of absorption is predicted for < _o, including the jump () for ( – _o + ) ₀T as well as peaks in the function () at the points _s=s (s=1, 2, 3,...). The value (₁) is determined by the formula for the absorption coefficient for one strong wave.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 105–109, July, 1981.The authors are grateful to É. M. Épshtein and Sh. M. Kogan for useful discussions.     

Study of Ti/Au,Ti/Al/Au,and Ti/Al/Ni/Au ohmic contacts to <Emphasis Type="Italic">n</Emphasis>-GaN

The contacts of Ti/Au, Ti/Al/Au, and Ti/Al/Ni/Au films deposited on n-GaN were studied by current–voltage (I–V) and transmission-line-method measurements. The effect of annealing temperature on specific contact resistivity has been investigated by changing the annealing temperature from 400 to 900 °C. Ti/Al/Au and Ti/Al/Ni/Au films were superior to the bilayer (Ti/Au) in ohmic contact characteristics and thermal stability. The Ti/Al/Ni/Au composite showed the best thermal stability due to the fact that Ni plays a more important role than the alloy of Ti/Al in preventing the interdiffusion of Ti, Al, and Au. The lowest contact resistivity (10^-7cm²) to n-GaN was obtained for the Ti/Al/Ni/Au sample by short-time/high-temperature annealing. The formation mechanism of ohmic contacts to n-GaN is also discussed. PACS 73.40.Cg; 73.61.Ey     

Direct calculation of centrifugal-distortion constants and inertial defects of XY3-type plane molecules from experimental data

A simple direct method is proposed for the calculation of the centrifugal-distortion constants and inertial defects of plane symmetric molecules of type XY₃ from the experimental frequencies, Coriolis constant ₃₃, and geometric parameters. The calculation formulas are given, together with the results obtained for the BF₃, BCl₃, BI₃, BBr₃, and SO₃ molecules.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 8, pp. 110–112, August, 1978.     

Kinetics of random sequential parking on a line

We study the kinetics of irreversible random sequential parking of intervals of different sizes on an infinite line. For the simplest fixed-length parking distribution the model reduces to the known car-parking problem and we present an alternate solution to this problem. We also consider the general homogeneous case when the parking distribution varies asx ^–1 atx 1 with the lengthx of the filling interval. We develop a scaling theory describing such mixture-deposition processes and show that the scaled hole-size distribution(), with =xt ^z a scaling variable, decays with the scaled mass as ^–exp(—const·¹⁺) as . We determine scaling exponentsz and, and find that at large times the coverage(t) has a power-law form 1 – (t)t ^–v with nonuniversal exponent =(2–)/(1+) depending on the homogeneity index .     

Temperature dependence of the effective work function for the BaO - W system

The temperature dependence of the work function has been examined for the BaO-W system for degrees of coating less than 1 and about 1 in the range 700–1400 °K; it is found that a monomolecular film gives a negative sign of this coefficient in this temperature range ( /T 10^–4 –10^–3 eV/deg). At 1000–1200 °K, the temperature coefficient is almost zero, while at 1200–1400 °K there is a positive value. If the covering is less than monomolecular, the sign is positive throughout the entire temperature range (/T 10^–4 eV/deg).Deceased.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii Fizika, No. 9, pp. 65–70, September, 1971.We are indebted to N. I. Éngovatova for direct assistance with the measurements, and to V. Rumyantsev for advice.     

Intersection properties of simple random walks: A renormalization group approach

We study estimates for the intersection probability,g(m), of two simple random walks on lattices of dimensiond=4, 4– as a problem in Euclidean field theory. We rigorously establish a renormalization group flow equation forg(m) and bounds on the -function which show that, ind=4,g(m) tends to zero logarithmically as the killing rate (mass)m tends to zero, and that the fixed point,g*, ind=4– is bounded by const' g*const. Our methods also yield estimates on the intersection probability of three random walks ind=3, 3–. For =0, these results were first obtained by Lawler [1].     

The quantum theory of multipole radiation in a dielectric

The potentials of an electromagnetic field of multipoles in a dielectric, which is realized by a dielectric sphere having a perfectly conducting surface, are derived. The diagonal values of the energy for thez component of the angular momentum and the square of the angular momentum of the field are determined and also the ratio between thez component of the angular momentum and the energy and the ratio between the square of the angular momentum and the square of the energy. It is shown that the total angular momentum can be divided in the usual way into orbital and spin parts but that these parts cannot be interpreted as the orbital and spin angular momentum because their eigenvalues cannot be the eigenvalues of any operator of infinitesimal rotation. In the commutation rules of a multipole field the vector character of the field is to a certain extent suppressed and the spin of the photon in a state with a certain value of the energy, parityz component of the angular momentum and the square of the angular momentum is not defined.

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, . ,z— , , z— . , , , , , - . , ,z— .

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In conclusion the author thanks Dr. . Muziká for directing the work, F. Samek for valuable remarks and discussion and J. Kvasnica for help in preparing the paper for publication and for adding a number of remarks.     

The low-temperature phase of Kac-Ising models

We analyze the low-temperature phase of ferromagnetic Kax-Ising models in dimensionsd2. We show that if the range of interactions is ^–1, then two disjoint translation-invariant Gibbs states exist if the inverse temperature satisfies –1^N, where =d(1–)/(2d+2)(d+1), for any >0. The proof involves the blocking procedure usual for Kac models and also a contour representation for the resulting long-range (almost) continuous-spin system which is suitable for the use of a variant of the Peierls argument.     

Spin-orbit coupling in the chlorobenzene molecule

The possible ways of drawing of the intensity of the S₀ T* transition in the chlorobenzene molecule are investigated. The effective spin-orbit coupling of either S* or S* states with the T* state leads to the out-of-plane polarized component of phosphorescence in the chlorobenzene. The in-plane polarized component cannot be explained by the mechanism under consideration — by drawing of intensity of the S₀ S₀* transitions through spin-orbit coupling of first order.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 8, pp. 134–138, August, 1974.     

Double phase-matched cascaded fifth harmonic generation in single nonlinear medium by focussed laser beam

Generation of a fifth harmonic by the cascading of two phase-matched third-order processes in a single centrosymmetric nonlinear medium with a focused fundamental beam is investigated theoretically. With the help of analytical and numerical investigations the optimized conditions for maximum conversion into the fifth harmonic are found. In general the optimal position of focusing depends on the values of the mismatches k₁ and k₂ for both steps of the third order cascading (++=3; 3++=5). It is shown that for best efficiency this method of fifth harmonic generation requires specially chosen k_1,opt and k_2,opt and focusing in the center of the nonlinear media. If the phase matching parameters are fixed and they deviate from the optimal values, then the optimal strength of focusing and position of the focus spot should be calculated according to the analysis presented here. PACS 42.65.-k; 42.65.Ky; 42.79.Nv     

Long-time tails in lattice Lorentz gases

We consider a Lorentz gas on a square lattice with a fraction c of scattering sites. The collision laws are deterministic (fixed mirror model) or stochastic (with transmission, reflection, and deflection probabilities ,, and respectively). If all mirrors are parallel, the mirror model is exactly solvable. For the general case a self-consistent ring kinetic equation is used to calculate the longtime tails of the velocity correlation function (0) (t) and the tensor correlation Q(0)Q(t) withQ= _{x y} . Both functions showt ^–2 tails, as opposed to the continuous Lorentz gas, where the tails are respectivelyt ^–2 andt ^–3. Inclusion of the self-consistent ring collisions increases the low-density coefficient of the tail in (0)(t) by 30–100% as compared to the simple ring collisions, depending on the model parameters.     

РАДИАЦИОННЫЙ ЗАХВАТ МЕДЛЕННЫХ НЕЙТРОНОВ ЯДРАМИ АТОМОВ

- S³³, Cl³⁶, K⁴⁰, ⁴¹, V⁵², n⁵⁶ Hg²⁰⁰. 100–1200 keV .

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Radiative capture of slow neutrons on atomic nuclei

The energies and absolute intensities of gamma radiation from the radiative capture of thermal neutrons on S³³, Cl³⁶, K⁴⁰, Ca⁴¹, V⁵², Mn⁵⁶ and Hg²⁰⁰ nuclei were measured by means of a one-crystal scintillation spectrometer. The transitions measured in the energy interval 100–1200 keV are mostly transitions between the lowest excited states of the nuclei studied.

     

The electroluminescence op ZnS-Cu single crystals excited with pulses of alternating polarity

The brightness waves of electroluminescence of ZnS—Cu were measured for the case of excitation with rectangular pulses as a function of the amplitude of the pulses and the temperature. A concrete model is proposed for electronic processes in barriers in ZnS crystals, the consequences of which for the decay of electroluminescence are in agreement with measurements.

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ZnS-Cu,

e ZnS-Cu . ZnS-Cu, .

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In conclusion the author thanks M. Trlifaj for valuable remarks and discussions, Z. Vojta and E. Rechziegel for constructing an important part of the apparatus and F. Karel for the electroluminescent crystals.