2 μm passive Q-switched mode-locked Tm3+:YAP laser with single-walled carbon nanotube absorber

We report the first demonstration, to our knowledge, of passive Q-switched mode-locking in a Tm³⁺:YAP laser, operating in the 2 μm broadly spectral region formed with a compact Z-flod cavity. A transmission-type single-walled carbon nanotube saturable absorber (SWCNT–SA) is used for the initiation of the pulse generation. The repetition rate of the Q-switched envelope was 60 kHz at the pump power of 8.6 W. The mode-locked pulses inside the Q-switched pulse envelope had a repetition rate of ～92 MHz. A maximum average output power of 761 mW was obtained. The dependence of the operational parameters on the pump power was also investigated experimentally.     

Diode-pumped actively Q-switched Nd:GGG laser operating at 938 nm

The stimulated emission cross-section of Nd:GGG crystal in 938 nm transition was measured by the amplifier approach. It is 2.3×10^?20 cm². A quasi-continuous-wave diode pumped, actively Q-switched Nd:GGG laser operating at 938 nm was demonstrated. Pumped by laser diodes with 900 W peak power and 300 μs pulse duration, it generated 168 mJ energy in long pulse mode. The slope efficiency was 36%. Q-switched by a KD?P Pockels cell, 41 mJ output pulse energy was obtained. The pulse duration and peak power were 120 ns and 340 kW, respectively. The optical to optical efficiency was 7%.     

Laser diode end-pumped passively Q-switched Tm,Ho:YLF laser with Cr:ZnS as a saturable absorber

Output performance of a continuous-wave (CW) laser diode end-pumped passively Q-switched Tm,Ho:YLF laser is demonstrated with a Cr:ZnS crystal as the saturable absorber. We particularly investigate the influence of saturable absorber's position in the resonator when the Cr:ZnS crystal is placed close to and far from the laser beam waist. We compare the experimental results at the two different positions, and find that the laser shows unusual output characteristics when the Cr:ZnS saturable absorber is placed close to the beam waist. The pulse width and the pulse energy almost keep constant, measured about 1.25 μs and 4 μJ respectively, when the pump power is changed in the range of 1–1.9 W. Moreover, the pulse repetition frequency can be tuned between 1.3 kHz and 2.6 kHz by changing the pump power. The output wavelength of the passively Q-switched laser shifts to 2053 nm from 2067 nm in CW operation.     

Improvement of stability and pulse energy in a diode-pumped dual-loss-modulated QML Nd:Lu0.2Y0.8VO4 laser with EO modulator and GaAs

The Q-switched and mode-locked (QML) performance in a diode-pumped Nd:Lu_0.2Y_0.8VO₄ laser with electro-optic (EO) modulator and GaAs saturaber absorber is investigated. In comparison with the solely passively QML laser with GaAs, the dual-loss-modulated QML laser with EO and GaAs can generate pulses with higher stability and shorter pulse width of Q-switched envelope, as well as higher pulse energy. At the repetition rate 1 kHz of EO, the pulse width of Q-switched pulse envelope has a compression of 89% and the pulse energy has an improvement of 24 times. The QML laser characteristics such as the pulse width, pulse peak power etc. have been measured for different small-signal transmittance (T₀) of GaAs, different reflectivity (R) of output coupler and modulation frequencies of the EO modulator (f_e). The highest peak power and the shortest pulse width of mode-locked pulses are obtained at f_e = 1 kHz, R = 90% and T₀ = 92.6%. By considering the influences of EO modulator, a developed rate equation model for the dual-loss-modulated QML laser with EO modulator and GaAs is proposed. The numerical solutions of the equations are in good agreement with the experimental results.     

Diode-pumped Nd:YAG ceramic laser at 946 nm passively Q-switched with a Cr4+:YAG saturable absorber

We demonstrate a diode-pumped Nd:YAG ceramic laser with emission at 946 nm that is passively Q-switched by single-crystal Cr⁴⁺:YAG saturable absorber. An average output power of 1.7 W is measured under 18.4 W of incident power using an output mirror with transmission T=4%. The corresponding optical-to-optical efficiency is 9.2%. The laser runs at a pulse repetition rate of 120 kHz and delivers pulses with energy of 14 μJ and duration of 80 ns, which corresponds to a peak power of 175 W.     

Efficient high-power UV laser generated by an optimized flat–flat actively Q-switched laser with extra-cavity harmonic generations

We investigate the parasitic lasing effect in the high-power actively Q-switched laser with a flat–flat resonator. The parasitic lasing effect in the low-Q stage is found to lead to long tails in the output pulses, corresponding to the peak-power reduction. We experimentally determine the shortest cavity length without the parasitic lasing effect to optimize the performance of the high-power actively Q-switched laser with a flat–flat cavity. We further use the optimized fundamental laser to generate green and UV lasers by extra-cavity harmonic generations. At a pump power of 44 W, the output powers at 355 nm and 532 nm as high as 6.65 W and 8.38 W are obtained at a pulse repetition rate of 40 kHz.     

Diode-pumped doubly Q-switched Nd:Lu0.33Y0.37Gd0.3VO4 laser with an electro-optic modulator and a single-walled carbon nanotube saturable absorber

By simultaneously using an electro-optic (EO) modulator and a single-walled carbon nanotube saturable absorber (SWCNT-SA) in the cavity, a diode-pumped doubly Q-switched Nd:Lu_0.33Y_0.37Gd_0.3VO₄ (Nd:LuYGdVO₄) laser is demonstrated. At the incident pump power 11.43 W and f=2 kHz, the minimum pulse width 17.6 ns and the maximum pulse peak power 19,886 W can be obtained. The experimental results show that this doubly Q-switched Nd:LuYGdVO₄ laser can generate shorter pulse width and higher peak power compared to the singly Q-switched Nd:LuYGdVO₄ laser with only EO or SWCNT-SA.     

Passively Q-switched,high peak power Nd:YAG laser pumped by QCW diode laser

A Nd:YAG laser passively Q-switched by a Cr:YAG showed a high single pulse energy of 53.0 mJ and 5.1 MW peak power. The laser was pumped by quasi-continuous-wave diode bars from single side. The Q-switched pulse had optical-to-optical efficiency of 12% and average temporal duration of 10.4 ns when Cr:YAG with initial transmission of 9.0% was used. Intense pumping as well as very low initial transmission of the saturable absorber gave very high peak power.     

LD-end-pumped passively Q-switched Nd:YAG ceramic laser with single wall carbon nanotube saturable absorber

We report on a LD-end-pumped passively Q-switched Nd:YAG ceramic laser by using a novel single wall carbon nanotube saturable absorber (SWCNT-SA). The SWCNT wafer was fabricated by electric Arc discharge method on quartz substrate with absorption wavelength of 1064 nm. We firstly investigated the continuous wave (CW) laser performance and scattering properties of Nd:YAG ceramic sample. For the case of passively Q-switched operation, a maximum output power of 376 mW was obtained at an incident pump power of 8.68 W at 808 nm, corresponding to an optical–optical conversion efficiency of 4.3%. The repetition rate as the increase of pump power varied from 14 to 95 kHz. The minimum pulse duration of 1.2 μs and maximum pulse energy of 4.5 μJ was generated at a repetition rate of 31.8 kHz.     

1.34 μm fluorescence and laser properties of Nd:La0.11Y0.89VO4 crystal

For Nd:La_xY_1−xVO₄ (x = 0.11) crystal, the ⁴F_3/2 → ⁴I_13/2 transition property was investigated for the first time. The fluorescence peak of Nd:La_0.11Y_0.89VO₄ crystal exhibited obvious inhomogeneous broadening comparing with that of Nd:YVO₄ crystal. With laser diode array as pump source, 1.34 μm continuous-wave (CW) and active Q-switched laser operations based on ⁴F_3/2 → ⁴I_13/2 transition were realized. For CW laser operation, the maximum output power of 2.47, 2.13 W is obtained with slope efficiencies of 29.4%, 27.6%, and optical to optical conversion efficiency of 26.2%, 24.7%, respectively for a, c cut crystal samples. For acousto-optic (AO) Q-switched laser operation, the shortest pulse width, highest peak power and maximum pulse energy came from the a-cut sample, which were 13 ns, 2.69 kW and 35 μJ, respectively.     

A diode end-pumped passively Q-switched Nd:YAG/KTA Raman laser

A diode end-pumped passively Q-switched Nd:YAG/KTA intracavity Raman laser is presented. A KTA crystal with a size of 5 mm × 5 mm × 25 mm is used as the Raman active medium and its 234 cm^?1 Raman mode is employed to finish the conversion from 1064 nm fundamental laser to 1091 nm Raman laser. A 2 mm thick Cr⁴⁺:YAG crystal is used as the saturable absorber. With an LD pump power of 7.5 W, the first-Stokes power of 250 mW is obtained with a pulse repetition frequency of 14.5 kHz. The corresponding diode-to-Stokes conversion efficiency is 3.3% and the pulse energy is 17.2 μJ. Pulse width is measured to be 12.6 ns and peak power is 1.4 kW.     

30 ps pulses source based on a fiber-coupled passively Q-switched microchip laser

We report the design of low-cost and compact short-pulse source based on a fiber-coupled Q-switched microchip laser. The combination of stimulated Raman scattering and nonlinear polarization rotation effects in the fiber associated with appropriate filtering makes it possible to tune pulse duration down to 32 ps with peak power above 3 kW. Pulse to pulse peak power fluctuation is below 4%.     

Passively Q-switched a-cut Nd:GdVO4 self-Raman laser with Cr:YAG

A passively Q-switched a-cut Nd:GdVO₄ self-Raman solid-state laser with Cr:YAG saturable absorber was firstly demonstrated. The first Stokes at 1173 nm was successfully obtained. At the maximum incident pump power, the pulse width was about 1.8 ns and the repetition rate was 27.5 kHz. 586.5 nm yellow laser output was also realized by use of an LBO frequency doubling crystal.     

Cavity-dumped electro-optical Q-switched Nd:GdVO4 laser with high repetition rate

We reported a cavity-dumped operation of electro-optical Q-switched Nd:GdVO₄ laser at high repetition rates for the first time. A constant 5.5 ns pulse duration was realized. The maximum average output power was 5.1 W at the highest repetition rate of 50 kHz, corresponding to a peak power of 18.5 kW.     

Variety of nanostructures induced by femtosecond laser pulses on surface of Au/Cr film stack

Several nanostructures were obtained after irradiation with femtosecond laser pulse (130 fs, 800 nm, 1 kHz pulse repetition frequency) on Au/Cr film stack. The influence of laser parameters such as fluence (0.5 J/cm², 1.5 J/cm², 3 J/cm²) and the number of pulse were investigated. With single pulse irradiation, the nanoline and nonoparticle were obtained for the pulse fluence of 0.5 J/cm² and 3 J/cm², respectively. The formation mechanism of those nanostructures was discussed. The results of this experiment demonstrate that different kinds of nanostructures could be formed by varying the laser parameters such as fluence and the number of pulse.     

Design and construction of Q-switched Nd:YAG laser system for LIBS measurements

A passive, Q-switched pulsed, Nd:YAG laser system was designed and built, which can provide a potential compact robust laser source for portable laser induced breakdown spectroscopy systems.The developed laser system operates at 1064 nm. Each laser shot contains a train of pulses having maximum total output energy of 170 mJ. The number of pulses varies from 1–6 pulses in each laser shot depending on the pump energy. The pulse width of each pulse ranges from 20 to 30 ns. The total duration of the output pulse train is within 300 μs. The multi-pulse nature of the laser shots was employed to enhance the LIBS signal. To validate the system, LIBS measurements and analysis were performed on ancient ceramic samples collected from Al-Fustat excavation in Old Cairo. The samples belong to different Islamic periods in Egypt history. The results obtained are highly indicative that useful information can be provided to archeologists for use in restoring and repairing of precious archeological objects.     

Passively Q-switched diode-pumped Raman laser with third-order Stokes eye-safe oscillation

We demonstrate a passively Q-switched all-solid-state laser system with intracavity Raman frequency conversion to the eye-safe spectral region. Laser oscillation at the 1.064 μm wavelength with a pulse repetition rate of several kilohertz was provided by a Nd:YAG crystal and a Cr:YAG passive absorber. Third Stokes oscillations at the 1.599 and 1.494 μm wavelengths were obtained in Ba(NO₃)₂ and PbWO₄ crystals with output pulse energies of 5 μJ and 6 μJ, respectively. The results of the numerical simulation of the pulse dynamics are in good agreement with the experimental data.     

A 980 nm Yb-doped single-mode fiber laser pumped by a 946 nm Q-switched Nd:YAG laser

We demonstrate a 980 nm single-mode Yb-doped fiber laser with a 946 nm Q-switched Nd:YAG laser used as the pump source. The experimental arrangement exploited a 36.5 cm length of fiber and used the output from both ends of the cavity, providing a total average output power of 100 mW with a slope efficiency of 38%. In order to increase the coupling efficiency and the practicability of the fiber laser, another experimental setup with single ended output was studied, producing an average output power of 80 mW from a fiber length of 23.5 cm. The pulse duration is 10 ns at a repetition frequency of 16 kHz. The linewidth of the laser is 4 nm, ranging from 977 to 981 nm.     

Investigation of Q-switched InP-based 1550 nm semiconductor lasers

High energy picosecond pulse generation from a two contact tapered 5 quantum well (QW) InGaAlAs/InP diode laser (1550 nm) is investigated using a passive Q-switching technique. Single peak pulses with pulse energies as high as 500 pJ and durations of typically hundreds of picoseconds are obtained from the device by applying reverse bias voltages in the range of 0 V to ?18 V to the absorber section of the device. It is also demonstrated that more symmetrical Q-switched pulses are obtained by reducing the duration of electrical pulses applied to the gain section of the laser. Such an improvement is attributed to the reduced time of the population inversion in the gain section due to shorter electrical pulse. We also show comparatively the dependence of optical spectra on the reverse bias voltage for diode lasers emitting at 1550 nm and 1350 nm, and demonstrate that better spectral output is obtained from AlGaInAs lasers emitting at a wavelength of 1550 nm.     

Pulsed laser induced damage in SOI material

Laser-induced damage in silicon-on-insulator (SOI) material is investigated with 1064 nm laser pulses. As the laser pulse duration is increased from 190 ps to 1.14 s, the damage threshold of SOI material decreases from 1.3×10¹⁰ to 7.7×10³ W/cm² in laser flux. It is found that the damage threshold varies inversely as the pulse duration for a short irradiation time, and is independent of pulse duration for a long irradiation time. The time dependence is in good agreement with a thermal model which well describes the thermal-induced damage in a semi-finite material irradiated by a Gaussian laser beam. The values of absorption coefficient and thermal conductivity under laser irradiation are calculated as 1.1×10³ cm^?1 and 0.18 Wcm^?1 K^?1, respectively, by fitting the model to the experimental results. These results on material damage can be used to predict the damage thresholds of SOI-based devices.