Experimental study of annular bright field (ABF) imaging using aberration-corrected scanning transmission electron microscopy (STEM)

Experimental parameters used in the annular bright field (ABF) imaging method were tested using images simulated with the multislice method. Images simulated under identical conditions were found to agree well with experimental images. The ABF technique was shown to be relatively insensitive to the sample thickness and the defocus. In experimental ABF images, atomic columns exhibited dark contrast over a wide range of specimen thickness and defocus values, from 10 to 70 nm and ?20 to +20 nm, respectively. A series of diffraction patterns at atomic columns, obtained using the diffraction imaging method, exhibited higher intensities in their central regions (0–11 mrad) for light elements and in their peripheral regions (11–22 mrad) for heavy elements. The results indicated that the contrast of light elements is enhanced by subtraction of the central region of the transmitted beam, since this is blocked by a circular mask in the ABF-STEM technique. Thus, the overall contrast of light elements is greatly improved, allowing them to be clearly visualized.     

Road condition analysis using NIR illumination and compensating for surrounding light

An investigation of a NIR camera system for road surface classification has been conducted for several road conditions. The surfaces were illuminated with three wavelengths, 980 nm, 1310 nm and 1550 nm and a halogen lamp, to simulate a real environment application with surrounding light. A measuring scheme to deal with surrounding light has been implemented enabling road condition classification from NIR images in a real environment. The retrieved camera images have been analyzed and an RGB representation of the different surfaces has been created to classify the different road conditions. The investigation shows that it is possible to distinguish between dry, moist, wet, frosty, icy and snowy road surfaces using a NIR camera system in a disturbed environment.     

Structural and photoluminescence investigation on the hot-wire assisted plasma enhanced chemical vapor deposition growth silicon nanowires

High density of silicon nanowires (SiNWs) were synthesized by a hot-wire assisted plasma enhanced chemical vapor deposition technique. The structural and optical properties of the as-grown SiNWs prepared at different rf power of 40 and 80 W were analyzed in this study. The SiNWs prepared at rf power of 40 W exhibited highly crystalline structure with a high crystal volume fraction, X_C of ～82% and are surrounded by a thin layer of SiO_x. The NWs show high absorption in the high energy region (E>1.8 eV) and strong photoluminescence at 1.73 to 2.05 eV (red–orange region) with a weak shoulder at 1.65 to 1.73 eV (near IR region). An increase in rf power to 80 W reduced the X_C to ～65% and led to the formation of nanocrystalline Si structures with a crystallite size of <4 nm within the SiNWs. These NWs are covered by a mixture of uncatalyzed amorphous Si layer. The SiNWs prepared at 80 W exhibited a high optical absorption ability above 99% in the broadband range between 220 and ～1500 nm and red emission between 1.65 and 1.95 eV. The interesting light absorption and photoluminescence properties from both SiNWs are discussed in the text.     

An organic electroluminescent device made from a gadolinium complex

A gadolinium ternary complex, tris(1-phenyl-3-methyl-4-isobutyryl-5-pyrazolone) (phenanthroline) gadolinium [Gd(PMIP)₃(Phen)] was synthesized and used as a light emitting material in the organic electroluminescent (EL) devices. The triple layer device with a structure of indium tin oxide (ITO)/N,N′-diphenyl-N,N′-bis(3-methylphenyl)-1,1′-biphenyl-4,4′-diamine (TPD) (20 nm)/Gd(PMIP)₃(Phen) (80 nm)/2, 9-dimethyl-4, 7-diphenyl-1, 10-phenanthroline (bathocuproine or BCP) (20 nm)/Mg: Ag(200 nm)/Ag(100 nm) exhibited green emission peaking at 535 nm. A maximum luminance of 230 cd/m² at 17 V and a peak power efficiency of 0.02 lm/w at 9 V were obtained.     

New probing techniques of radiative shocks

Radiative shock waves propagating in xenon at a low pressure have been produced using 60 joules of iodine laser (λ = 1.315 μm) at PALS center. The shocks have been probed by XUV imaging using a Zn X-raylaser (λ = 21 nm) generated with a 20-ns delay after the shock creating pulse. Auxiliary high-speed silicon diodes allowed performing space- and time-resolved measurement of plasma self-emission in the visible and XUV. The results show the generation of a shock wave propagating at 60 km/s preceded by a radiative precursor. This demonstrates the feasibility of radiative shock generation using high power infrared lasers and the use of XRL backlighting as a suitable diagnostic for shock imaging.     

Luminescence of Eu2+–vc− dipoles and their associates in CsI:Eu crystals

Spectral-kinetics properties of photo-scintillation excited with single light pulses of a nitrogen laser (λ=337.1 nm, t_1/2=5 ns, Q=1 mJ) have been studied in CsI:Eu crystals at temperature within 80–300 K. It is found that the exponential decay of 463 nm emission band has a time constant which grows from 0.85 μs at 78 K to 1.6 μs at 380 K. Such an anomalous temperature behavior of 463 nm emission decay kinetics is discussed in terms of the crystal thermal expansion. It has been proposed that 463 nm emission is caused by a cluster center consisting of three dipoles Eu²⁺v_c^? bounded with each other in a hexagon. Owing to the exchange resonance in the cluster, the energy passes from an excited dipole to a non-excited one and the distance between them gets longer due to thermal expansion of the crystal.     

Low loss propagation in slow light photonic crystal waveguides at group indices up to 60

We have designed slow light photonic crystal waveguides operating in a low loss and constant dispersion window of Δλ = 2 nm around λ = 1565 nm with a group index of n_g = 60. We experimentally demonstrate a relatively low propagation loss, of 130 dB/cm, for waveguides up to 800 μm in length. This result is particularly remarkable given that the waveguides were written on an electron-beam lithography tool with a writefield of 100 μm that exhibits stitching errors of typically 10–50 nm. We reduced the impact of these stitching errors by introducing “slow–fast–slow” mode conversion interfaces and show that these interfaces reduce the loss from 320 dB/cm to 130 dB/cm at n_g = 60. This significant improvement highlights the importance of the slow–fast–slow method and shows that high performance slow light waveguides can be realised with lengths much longer than the writing field of a given e-beam lithography tool.     

Nonlinear optical properties of silver colloidal solution by in situ synthesis technique

The silver colloidal solutions were prepared by in situ synthesis technique in the presence of the Polymethyl Methacrylate, which was polymerized by reversible addition-fragmentation transfer. The UV–VIS spectra and transmission electron microscopy had shown the formation of sphere silver nanoparticles with average size of 10 nm. Nonlinear optical properties as a function of silver concentration were studied using Z-scan technique with 13 ns pulse duration at 532 nm. The optical nonlinearity enhancement was observed by increasing the concentration. The third-order nonlinear susceptibility χ⁽³⁾ was measured to 1.045 × 10⁻¹¹ esu when the concentration was 2.13 mg/ml. Besides, the sample was founded to exhibit a shift from saturable absorption to reverse saturable absorption at higher incident laser energy. The reverse saturable absorption was observed to be responsible for the optical limiting characteristics in our experiments.     

The fabrication of aspherical microlenses using focused ion-beam techniques

Aspheric lenses are the most common method for correcting for spherical aberrations but, in microlens production, highly-controlled lens profiles are hard to achieve. We demonstrate a technique for creating bespoke, highly-accurate aspheric or spherical profile silicon microlens moulds, of almost any footprint, using focused ion-beam milling. Along with this, we present a method of removing induced ion-beam damage in silicon, via a hydrofluoric acid etch, helping to recover the surface's optical and chemical properties.In this paper, we demonstrate that our milled and etched moulds have a roughness of 4.0–4.1 nm, meaning they scatter less than 1% of light, down to wavelengths of 51 nm, showing that the moulds are suitable to make lenses that are able to handle light from UV up to infra-red.Using empirical experiments and computer simulations, we show that increasing the ion-dose when milling increases the amount of gallium a hydrofluoric acid etch can remove, by increasing the degree of amorphisation within the surface. For doses above 3000 μC/cm² this restores previous surface properties, reducing adhesion to the mould, allowing for a cleaner release and enabling higher quality lenses to be made.Our technique is used to make aspheric microlenses of down to 3 μm in size, but with a potential to make lenses smaller than 1 μm.     

Novel TMM for analyzing evanescent waves and optimized subwavelength imaging in a multilayer structure

Here, we report the best configuration for metal-dielectric multilayer structure that recently has been used for sub-wavelength imaging beyond the diffraction limit. We have used Genetic Algorithm (GA) to achieve the best optical transfer function (OTF) calculated by a novel Transfer Matrix Method (TMM) for evanescent waves, to find optimized configuration of the structure for sub-wavelength imaging. Our optimized configuration composed of Ag–GaP with 10 nm thickness for both layers and air as the surrounding medium, shows 0.05 λ imaging resolution with 83.82% contrast at 545 nm wavelength. Also, we show that in photolithographic applications if imaging and object layers are replaced by a photoresist and quartz respectively instead of air, 0.03 λ resolution can be obtained. In contrast to the other works, we have mathematically obtained a structure that exhibits better resolution in a visible wavelength in spite of thinner layers thickness by regarding fabrication difficulties.     

Influence of γ-irradiation on the optical parameters of 4-tricyanovinyl-N,N-diethylaniline thin films

Thin films of 4-tricyanovinyl-N,N-diethylaniline (TCVA) were prepared by thermal evaporation technique. The spectral and the optical parameters have been investigated by using the spectrophotometric measurements of both transmittance and reflectance at normal incidence of light in the wavelength range 200–2500 nm. The effect of γ-irradiation on the optical parameters was investigated. It was observed that the increase in γ-irradiation dose caused an increase in the value of absorption index and a shift in the spectrum towards higher wavelengths. Therefore, the value of the optical band gap has decreased from 1.45 eV for as-deposited film to 1.39 eV for film exposed to γ-ray dose of 150 kGy and Urbach tail increased. On the other hand, the dispersion parameters of TCVA films were increased with the increase of the irradiation dose.     

Microhardness of a dental restorative composite resin containing nanoparticles polymerized with argon ion laser

The objective of this study was to compare the microhardness of two resin composites (microhybrid and nanoparticles). Light activation was performed with argon ion laser 1.56 J (L) and halogen light 2.6 J (H) was used as control. Measurements were taken on the irradiated surfaces and those opposite them, at thicknesses of 1, 2 and 3 mm. To evaluate the quality of polymerization, the percentages of maximum hardness were calculated (PMH). For statistical analysis the ANOVA and Tukey tests were used (p ≤ 0.05). To microhybrid was shown that the hardness with laser was inferior to the hardness achieved with halogen light, for both the 1 mm and 2 mm. The nanoparticles polymerized with laser, presented lower hardness even on the irradiated surface, than the same surface light activated with halogen light. The microhybrid attained a minimum PMH of 80% up to the thickness of 2 mm with halogen light, and with laser, only up to 1 mm. The nanoparticles attained a minimum PMH of 80% up to 3 mm thickness with halogen light and with laser this minimum was not obtained at any thickness. Based on these results, it could be concluded that light activation with argon ion laser is contra-indicated for the studied nanoparticles.     

Experimental study using optoacoustic spectroscopy (OAS) on spherical gold nanoparticles

In this paper a spectroscopic characterisation method based on the optoacoustic technique has been used to investigate the optical properties of two separate spherical gold nanoparticle (SGNP) solutions where an absorption peak located at 520 nm has been observed. This analysis has been carried out over the visible wavelength range from 410 to 650 nm using a Q-switched Nd:YAG pumped optical parametric oscillator (OPO). To verify the reliability of optoacoustic spectroscopy (OAS), the results obtained have been compared to those from more standard and limited spectrophotometer and reference collimated optical transmission schemes, where good agreement is shown. The experimental procedure presented here demonstrates the potential of this technique for integration along with optoacoustic imaging methods to identify physiological information for non-destructive in-vivo applications.     

Single image rectification of thermal images for geometric studies in façade inspections

This work presents a photogrammetric technique that provides geometric and thermal information about building façades. It uses low cost and portable scale bars, specially designed for thermal imaging, and processing software based on single image rectification. Image rectification corrects the original photo displacement due to the projection and perspective, and radial distortions introduced by the lens of the camera.The technique is tested by comparing laser scanning and thermal data. Seven segments of different orientation and length are selected for the measurement. Accuracy tests show errors between 44 mm and 151 mm. Precision values range between 22 mm and 61 mm for a maximum length of 7259 mm. The accuracy and precision results obtained for the technique open the possibility of extending its use to building inspection tasks.     

Texture and strain in CoPt/Ag nanocomposite films

The texture and microstrain in CoPt/Ag nanocomposite films is monitored as a function of film thickness. Perpendicular anisotropy due to (0 0 1) texturing is achieved by annealing films with thickness below 15 nm at 600°C. As a function of film thickness δ the texture evolves from weak (0 0 1) below 9 nm to strong (0 0 1) at δ=12 nm which deteriorates rapidly above 15 nm and evolves to (1 1 1) above 40 nm. The strain is minimized in the range of film thickness where the (0 0 1) texturing is optimum indicating a texturing mechanism related to the reduction of mechanical strain energy.     

Nuclear polarization by optical pumping in InP:Fe above liquid nitrogen temperature

Hyperpolarized nuclear spins are observed in optically pumped iron-doped InP from 70 K to 140 K. ³¹P NMR was carried out at 9.28 T (159.8 MHz) during optical excitation with circularly polarized light, using a laser diode (λ∼830 nm) as a source. The enhancement of the nuclear spin polarization by optical pumping at 70 K is estimated to be about 34 for those nuclei in the region of the sample absorbing light. This enhancement decreases with increasing temperature. As the direction of the enhanced nuclear spin polarization is found parallel or antiparallel to the travelling direction of the σ⁺ or σ⁻, the contact hyperfine interaction is dominant compared to the dipolar hyperfine interaction.     

Improvement of polarization extinction in silicon waveguide devices

The SOI based waveguide devices are found to be highly polarization sensitive. Unwanted polarization excitations can be attenuated by integrating a TE- or TM-pass polarizer. A large attenuation of TM-polarized light has been observed when a thin film of metal is coated on the top of silicon rib waveguide, while TE-polarized light remains almost unaffected. The attenuation of TM-polarized light is attributed to the plasmonic absorption of the evanescent field in the metal cladding. Typically, with an Al cladding of thickness ～ 100 nm and a length of 1 mm on top of a single-mode (λ ～ 1550 nm) SOI rib waveguide structure, TE vs TM extinction ratio of ～ 15 dB has been obtained. Integrating such waveguide polarizers in a directional coupler and MZI based DWDM channel interleaver, we have also achieved an improvement in polarization extinction by ～ 15 dB.     

Luminescence study of self-trapped excitons in CdMoO4

Luminescence properties of CdMoO₄ crystals have been investigated in a wide temperature range of T=5–300 K. The luminescence-excitation spectra are examined by using synchrotron radiation as a light source. A broad structureless emission band appears with a maximum at nearly 550 nm when excited with photons in the fundamental absorption region (<350 nm) at T=5 K. This luminescence is ascribed to a radiative transition from the triplet state of a self-trapped exciton (STE) located on a (MoO₄)^2? complex anion. Time-resolved luminescence spectra are also measured under the excitation with 266 nm light from a Nd:YAG laser. It is confirmed that triplet luminescence consists of three emission bands with different decay times. Such composite nature is explained in terms of a Jahn–Teller splitting of the triplet STE state. The triplet luminescence at 550 nm is found to be greatly polarized in the direction along the crystallographic c axis at low temperatures, but change the degree of polarization from positive to negative at T>180 K. This remarkable polarization is accounted for by introducing further symmetry lowering of tetrahedral (MoO₄)^2? ions due to a uniaxial crystal field, in addition to the Jahn–Teller distortion. Furthermore, weak luminescence from a singlet state locating above the triplet state is time-resolved just after the pulse excitation, with a polarization parallel to the c axis. The excited sublevels of STEs responsible for CdMoO₄ luminescence are assigned on the basis of these experimental results and a group-theoretical consideration.     

Interface photoluminescence of the SnO2:F/CdS:In/CdTe thin film solar cells prepared partially by the spray pyrolysis technique

CdS/CdTe solar cells were built by depositing a 200 nm layer of SnO₂:F on glass substrates by the spray pyrolysis (SP) technique, a 500 nm CdS:In layer by the same technique and a 1–1.5 μm CdTe layer by vacuum evaporation. The cells were CdCl₂ heat-treated in nitrogen atmosphere for 30 min at 350 °C. The photoluminescence (PL) spectra were measured at the CdS/CdTe interface for two cells with different values of the CdTe layer's thickness at the temperature T=60 K. A deconvolution peak fit was performed from which it is found that the peaks are characteristic of the solid solution CdS_xTe_1?x. The parabolic relation that relates the bandgap energy with the composition was used to estimate x, where x is [S]/([Te]+[S]) and [Te], [S] are the concentrations of Te and S atoms, respectively. The results show that the interface is smooth and the change of the bandgap occurs gradually. The solar cell of the thicker CdTe layer showed more interdiffusion at the CdS/CdTe interface and better photovoltaic characteristics.     

Coherent beam combination of two thulium-doped fiber laser beams with the multi-ditheringtechnique

Coherent beam combination of two thulium-doped fiber laser beams using a multi-dithering technique is presented for the first time. In the experiment, two fiber lasers centered at 1948.6 nm are coherently combined, and a phase modulator based on piezoelectric ceramics transducer is connected in one beam path to compensate for the phase errors between the two beams. When the phase control system is closed loop, the fringe contrast of the far-field intensity pattern is improved to be more than 75%, from 15% in open-loop, and the residual phase error is less than λ/20. The experimental results show that the performance of the phase control system is robust and the control bandwidth is more than 1 kHz, which indicates that the above approach can be scaled to facilitate the coherent beam combination of kilo-watt level thulium-doped fiberlaser.