Structure and hardness of a-C:H films prepared by middle frequency plasma chemical vapor deposition

a-C:H films were prepared by middle frequency plasma chemical vapor deposition (MF-PCVD) on silicon substrates from two hydrocarbon source gases, CH₄ and a mixture of C₂H₂ + H₂, at varying bias voltage amplitudes. Raman spectroscopy shows that the structure of the a-C:H films deposited from these two precursors is different. For the films deposited from CH₄, the G peak position around 1520 cm⁻¹ and the small intensity ratio of D peak to G peak (I(D)/I(G)) indicate that the C-C sp³ fraction in this film is about 20 at.%. These films are diamond-like a-C:H films. For the films deposited from C₂H₂ + H₂, the Raman results indicate that their structure is close to graphite-like amorphous carbon. The hardness and elastic modulus of the films deposited from CH₄ increase with increasing bias voltage, while a decrease of hardness and elastic modulus of the films deposited from a mixture of C₂H₂ + H₂ with increasing bias voltage is observed.     

在不同应力下石墨烯中拉曼谱的G峰劈裂的变化

应用计及五阶近邻的力常数模型,研究了单轴应力下的石墨烯和芳香烃分子三明治型贴层的石墨烯中拉曼谱的G峰劈裂.计算结果表明对称性的降低解除了G峰对应的在Γ点的面内的纵波光学模声子和横波光学模声子能量简并,从而G峰劈裂为G⁺和G^- 两个峰.在单轴应力作用下,C—C键的伸长致使力常数减小,软化了面内的光学模声子,导致两个G峰都红移;芳香烃分子对石墨烯产生的沿分子长短边方向不同的应力作用,使得G峰对应的两支光学模声子的频率一支发生蓝移,而另一支发生红移.这解 关键词： 力常数模型 石墨烯 拉曼G峰劈裂     

Quantum dot nanostructures for multi-band infrared detection

A dual-band (two-color) tunneling-quantum dot infrared photodetector (T-QDIP) structure, which provides wavelength selectivity using bias voltage polarity, is reported. In this T-QDIP, photoexcitation takes place in InGaAs QDs and the excited carriers tunnel through an AlGaAs/InGaAs/AlGaAs double-barrier by means of resonant tunneling when the bias voltage required to line up the QD excited state and the double-barrier state is applied. Two double-barriers incorporated on the top and bottom sides of the QDs provide tunneling conditions for the second and the first excited state in the QDs (one double-barrier for each QD excited state) under forward and reverse bias, respectively. This field dependent tunneling for excited carriers in the T-QDIP is the basis for the operating wavelength selection. Experimental results showed that the T-QDIP exhibits three response peaks at ～4.5 (or 4.9), 9.5, and 16.9 μm and selection of either the 9.5 or the 16.9 μm peak is obtained by the bias polarity. The peak detectivity (at 9.5 and 16.9 μm) of this detector is in the range of 1.0–6.0 × 10¹² Jones at 50 K. This detector does not provide a zero spectral crosstalk due to the peak at 4.5 μm not being bias-selectable. To overcome this, a quantum dot super-lattice infrared photodetector (SL-QDIP), which provides complete bias-selectability of the response peaks, is presented. The active region consists of two quantum dot super-lattices separated by a graded barrier, enabling photocurrent generation only in one super-lattice for a given bias polarity. According to theoretical predictions, a combined response due to three peaks at 2.9, 3.7, and 4.2 μm is expected for reverse bias, while a combined response of three peaks at 5.1, 7.8, and 10.5 μm is expected for forward bias.     

Above-gap and subgap differential conductance anomaly in concentrated magnetic semiconductor Zn0.32Co0.68O1 − v/Pb superconductor hybrid junctions

The Zn_0.32Co_0.68O_1 − v/Pb hybrid junctions were prepared, where the concentrated magnetic semiconductor Zn_0.32Co_0.68O_1 − v is in the region of variable range hopping transport instead of the ballistic or diffusive transport. The high differential conductance peak at gap voltage and two above-gap peaks were observed below the superconducting critical temperature. Moreover, both the zero bias conductance peak and the finite bias conductance peak were observed below the gap voltage. All these differential conductance peaks systematically evolve and finally disappear as the temperature or the magnetic field increases. These transport phenomena were explained by phase coherent Andreev reflection in the presence of strong disorder, magnetic impurity scattering, and spin polarization.     

Low voltage electrodeposition of CNx films and study of the effect of the deposition voltage on bonding configurations

Carbon nitride (CN_x) films were deposited from acetonitrile at low voltage (150-450 V) through electrodeposition. The films were characterized by atomic force microscopy (AFM), Raman spectroscopy and Fourier transform infrared (FT-IR) spectroscopy. AFM investigations revealed that the grain size was ∼200 nm and roughness was ∼10 nm. The films were found to be continuous and close packed. IR spectra revealed existence of strong sp³, sp² type bonding and weak sp type carbon nitrogen bonds and these bonds were found to increase with voltage. The fraction of sp³-bonded species in the sample increased in low voltage range and after reaching maximum at 350 V, decreased for higher voltages. However, the concentration of sp² CN ring structures in the film increased with increasing voltage. Also, the peak width decreased at low voltages reaching a minimum and increased thereafter. It was observed that the voltage dependent increase in the concentration of polymeric type sp² CN (chain) structures was much more pronounced than that of graphitic type sp² CN (ring) structures. Raman spectra showed the presence of both the D and G bands. The shift in the G band indicated the presence of nitrogen in the film. The I_D/I_G ratio was found to increase with the incorporation of nitrogen. Auger electron spectroscopy (AES) showed a clear increase in the nitrogen content with increase in the voltage. The formation of the film could be explained on the basis of dissociation of electrolyte under applied voltage.     

Polarized Raman spectroscopy study of NiSi film grown on Si(001) substrate

We report on the growth of NiSi film on Si(001) substrate with an orientation of NiSi[200]//Si[001]. Polarized Raman spectroscopy was used to assign the symmetry of the NiSi Raman peaks. Raman peaks at 213 cm⁻¹, 295 cm⁻¹, and 367 cm⁻¹ are assigned to be A _g symmetry and peaks at 196 cm⁻¹, and 254 cm⁻¹ are B _3g symmetry.     

Kinetic analysis of high temperature secondary thermoluminescence glow peaks in α-Al2O3:C

The kinetic analysis of secondary glow peaks in carbon-doped aluminium oxide is reported. A glow curve measured at 0.4 °C s⁻¹ after beta irradiation to 3 Gy revealed at least five peaks as a result of various techniques of glow curve resolution; the dominant peak at 156 °C (peak II) and two weaker-intensity secondary peaks one at 36 °C (peak I) and the other at 264 °C (peak III). Peaks IIA and IV at 170 and 422 °C respectively only became apparent after removal of preceding more prominent peaks. The secondary peaks are particularly weak in intensity and are as usual dominated by the main dosimetry peak. The analysis in this report focusses on peak III, usually seen adjacent to the main dosimetry peak but whose presence is masked by the extreme sensitivity of the latter. Complementary analyses of the weaker intensity peaks I, IIA and IV are included. Peaks I, IIA and III are subject to first-order kinetics while for peaks II and IV the issue is less conclusive. The activation energy increases from 0.72 eV for peak I to about 1.3 eV for peak IV with values for peak II and IIA similar at ∼1 eV. In general, the frequency factor corresponding to the lower temperature peaks (I, II, and IIA) have values (10¹⁰–10¹² s⁻¹) that are an order of magnitude or so greater than for peaks III and IV (10⁹–10¹¹ s⁻¹). Except for peak I, peak II and all other secondary peaks are affected by thermal quenching whose activation energy was determined as ΔE = 0.95 ± 0.04 eV using peak IIA and as ΔE = 1.48 ± 0.10 eV using peak III. The overall conclusion is that all peaks correspond to electron traps and are associated with the same recombination centre.     

Pressure‐induced anomalous phase transformation in nano‐crystalline dysprosium sesquioxide

The phase transformation in nano‐crystalline dysprosium sesquioxide (Dy₂O₃) under high pressures is investigated using in situ Raman spectroscopy. The material at ambient was found to be cubic in structure using X‐ray diffraction (XRD) and Raman spectroscopy, while atomic force microscope (AFM) showed the nano‐crystalline nature of the material which was further confirmed using XRD. Under ambient conditions the Raman spectrum showed a predominant cubic phase peak at 374 cm⁻¹, identified as F_g mode. With increase in the applied pressure this band steadily shifts to higher wavenumbers. However, around a pressure of about 14.6 GPa, another broad band is seen to be developing around 530 cm⁻¹ which splits into two distinct peaks as the pressure is further increased. In addition, the cubic phase peak also starts losing intensity significantly, and above a pressure of 17.81 GPa this peak almost completely disappears and is replaced by two strong peaks at about 517 and 553 cm⁻¹. These peaks have been identified as occurring due to the development of hexagonal phase at the expense of cubic phase. Further increase in pressure up to about 25.5 GPa does not lead to any new peaks apart from slight shifting of the hexagonal phase peaks to higher wavenumbers. With release of the applied pressure, these peaks shift to lower wavenumbers and lose their doublet nature. However, the starting cubic phase is not recovered at total release but rather ends up in monoclinic structure. The factors contributing to this anomalous phase evolution would be discussed in detail. Copyright © 2010 John Wiley & Sons, Ltd.     

Effect of ECR-assisted microwave plasma nitriding treatment on the microstructure characteristics of FCVA deposited ultra-thin ta-C films for high-density magnetic storage applications

There are higher technical requirements for protecting layer of magnetic heads and disks used in future high-density storage fields. In this paper, ultra-thin (2 nm thickness) tetrahedral amorphous carbon (ta-C) films were firstly prepared by filtered cathodic vacuum arc (FCVA) method, then a series of nitriding treatments were performed with nitrogen plasma generated using electron cyclotron resonance (ECR) microwave source. Here it highlighted the influence of nitrogen flow and applied substrate bias voltage on the structural characteristics of ta-C films during the plasma nitriding process. The chemical compositions, element depth distribution profiles, physical structures and bonding configurations of plasma-nitrided ta-C films were investigated by X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES) and UV-vis Raman spectroscopy. The experimental results show that the carbon nitride compounds (CN_x) are formed in nitrogenated ta-C films in which the N content and its depth distribution depends on bias voltage to large extent rather than N₂ flow. The N content of nitrogenated ta-C films can reach 16 at.% for a substrate bias of −300 V and a N₂ flow of 90 sccm. With increasing nitrogen content, there is less G peak dispersion and more ordering of structure. Furthermore, appropriate nitriding treatment (substrate bias: −100 V, N₂ flow: 150 sccm) can greatly increase the fraction of sp³ and sp³C-N bonds, but the values begin to fall when the N content is above 9.8 at.%. All these indicate that suitable ECR-assisted microwave plasma nitriding is a potential modification method to obtain ultra-thin ta-C films with higher sp³ and sp³C-N fractions for high-density magnetic storage applications.     

Characterization of 3 MeV H+ irradiation induced defects in nuclear grade graphite

Atomistic structure change in a nuclear grade graphite irradiated at 353 K to 3.4×10¹⁷ ion/cm² with 3 MeV H⁺ was characterized by measuring positron lifetime and Raman spectrum at room temperature. It is evident from the positron lifetime results that the pre-existing structural defect is disoriented crystalline boundaries, and vacancy clusters ranging from di- to quadruple-vacancies were newly formed after ion irradiation. The relative intensity ratio of the Raman D and G peaks increased from 0.25 to 0.67 after ion irradiation. The concentration of radiation-induced vacancies was reasonably estimated by the Raman intensity ratio.     

负偏压作用下染料敏化太阳电池界面及光电性能研究

太阳电池组件由于局部电压不匹配,其中部分电池可能较长时间工作在负偏压状态下,从而影响电池光电性能.借助拉曼光谱、电化学阻抗谱和入射单色光量子效率(IPCE)等测试手段,研究长期负偏压作用下染料敏化太阳电池光电性能的变化及其影响机理.拉曼光谱研究结果表明:电池在1000 h负偏压作用下,电解质中阳离子(Li⁺)会向光阳极(TiO₂电极)移动并嵌入TiO₂薄膜中;长期负偏压作用还会致使TiO₂/电解质界面阻抗增大和IPCE下降,导致电池开路电压升高和短路电流减小.通过加入苯并咪唑(BI)添加剂,经1000 h负偏压后电池的拉曼光谱实验表明,BI能在一定程度阻碍Li⁺的嵌入,电池具有较好的长期稳定性.不同负偏压下的老化实验进一步表明,通过加入添加剂能够使电池在长期负偏压下保持较好的稳定性. 关键词： 染料敏化 太阳电池 组件 负偏压     

X-ray photoelectron spectroscopic study of nitrogen incorporated amorphous carbon films embedded with nanoparticles

The effect of substrate bias on X-ray photoelectron spectroscopy (XPS) study of nitrogen incorporated amorphous carbon (a-C:N) films embedded with nanoparticles deposited by filtered cathodic jet carbon arc technique is discussed. High resolution transmission electron microscope exhibited initially the amorphous structure but on closer examination the film was constituted of amorphous phase with the nanoparticle embedded in the amorphous matrix. X-ray diffraction study reveals dominantly an amorphous nature of the film. A straight forward method of deconvolution of XPS spectra has been used to evaluate the sp³ and sp² contents present in these a-C:N films. The carbon (C 1s) peaks have been deconvoluted into four different peaks and nitrogen (N 1s) peaks have been deconvoluted into three different peaks which attribute to different bonding state between C, N and O. The full width at half maxima (FWHM) of C 1s peak, sp³ content and sp³/sp² ratio of a-C:N films increase up to −150 V substrate bias and beyond −150 V substrate bias these parameters are found to decrease. Thus, the parameters evaluated are found to be dependent on the substrate bias which peaks at −150 V substrate bias.     

Effect of substrate bias voltage on the structure, electric and dielectric properties of TiO2 thin films by DC magnetron sputtering

Titanium dioxide (TiO₂) films have been deposited on glass and p-silicon (1 0 0) substrates by DC magnetron sputtering technique to investigate their structural, electrical and optical properties. The surface composition of the TiO₂ films has been analyzed by X-ray photoelectron spectroscopy. The TiO₂ films formed on unbiased substrates were amorphous. Application of negative bias voltage to the substrate transformed the amorphous TiO₂ into polycrystalline as confirmed by Raman spectroscopic studies. Thin film capacitors with configuration of Al/TiO₂/p-Si have been fabricated. The leakage current density of unbiased films was 1 × 10⁻⁶ A/cm² at a gate bias voltage of 1.5 V and it was decreased to 1.41 × 10⁻⁷ A/cm² with the increase of substrate bias voltage to −150 V owing to the increase in thickness of interfacial layer of SiO₂. Dielectric properties and AC electrical conductivity of the films were studied at various frequencies for unbiased and biased at −150 V. The capacitance at 1 MHz for unbiased films was 2.42 × 10⁻¹⁰ F and it increased to 5.8 × 10⁻¹⁰ F in the films formed at substrate bias voltage of −150 V. Dielectric constant of TiO₂ films were calculated from capacitance–voltage measurements at 1 MHz frequency. The dielectric constant of unbiased films was 6.2 while those formed at −150 V it increased to 19. The optical band gap of the films decreased from 3.50 to 3.42 eV with the increase of substrate bias voltage from 0 to −150 V.     

Raman scattering in layered compound 2H-WS2

Raman scattering of layer-type compound 2H-WS₂ has been studied at room temperature. The first-order Raman peaks are observed at 27.4, 357 and 423 cm^-1. The low-frequency peak at 27.4 cm^-1 is a rigid-layer mode, from which the interlayer shear force constant is estimated. The central force model is applied to the high-frequency phonons. The interlayer shear force constant is much smaller than the intralayer force constants. We also find several peaks due to the second-order processes.     

The analysis of superconducting thin films modified by AFM lithography with a spectroscopic imaging technique

A practical application of nanolithography using atomic force microscopy (AFM) was accomplished in fabricating superconducting flux flow transistors (SFFTs). It was found that it is essential to oxidize a superconducting thin film, grown on LaAlO₃ substrates by a thermal CVD process, by an applied bias voltage between a conducting AFM tip and the films, since I/V characteristics of the device were mainly controlled by the modified gate area in the SFFT. After AFM lithography, the critical current of an YBCO thin film was found to be degraded. Raman lines in the modified YBCO film were observed at 340, 502, and 632 cm⁻¹ in Ar the laser system and 142, 225, and 585 cm⁻¹ in the He-Ne laser system. Raman fluorescence images were also produced by mapping the Raman peaks. A strain image of the peak at 142 cm⁻¹ was most clear, which means that a surface of the YBCO thin film was changed into the YBa₂Cu₃O₆ insulator. AFM nanolithography enables us to fabricate a channel between a source and a drain in SFFT in order to get I/V characteristics.     

Visible,near‐infrared,and ultraviolet laser‐excited Raman spectroscopy of the monocytes/macrophages (U937) cells

Raman spectra of the monocytes were recorded with laser excitation at 532, 785, 830, and 244 nm. The measurements of the Raman spectra of monocytes excited with visible, near‐infrared (NIR), and ultraviolet (UV) lasers lad to the following conclusions. (1) The Raman peak pattern of the monocytes can be easily distinguished from those of HeLa and yeast cells; (2) Positions of the Raman peaks of the dried cell are in coincidence with those of the monocytes in a culture cell media. However, the relative intensities of the peaks are changed: the peak centered around 1045 cm⁻¹ is strongly intensified. (3) Raman spectra of the dead monocytes are similar to those of living cells with only one exception: the Raman peak centered around 1004 cm⁻¹ associated with breathing mode of phenylalanine is strongly intensified. The Raman spectra of monocytes excited with 244‐nm UV laser were measured on cells in a cell culture medium. A peak centered at 1485 cm⁻¹ dominates the UV Raman spectra of monocytes. The ratio I₁₅₇₄/I₁₆₁₃ for monocytes is found to be around 0.71. This number reflects the ratio between proteins and DNA content inside a cell and it is found to be twice as high as that of E. coli and 5 times as high as that of gram‐positive bacteria. Copyright © 2009 John Wiley & Sons, Ltd.     

Superheating of silicon nanocrystals observed by Raman spectroscopy

In the Raman spectra of silicon nanocrystals a new anomalous component was detected. Close to the usual first order Raman peak situated for a bulk crystal at 521 cm⁻¹ at room temperature, two peaks arise shifting towards lower energy and demonstrating a huge temperature increase, as measured by the ratio of the Stokes/anti-Stokes peak intensities. This behavior is dependent on the laser power and on the morphology of the nanocrystals. We can exclude, however, confinement effects, although surface enhanced phonon modes could be responsible of such superheating. Alternative explanations are also suggested and discussed.     

Qualitative analysis of desi ghee,edible oils,and spreads using Raman spectroscopy

Keeping in view the importance of dietary fats in modulating disease risk, a study was planned to compare edible oils, spreads, and desi ghee based on fatty acid composition through Raman spectroscopy. The double bonds in unsaturated oils tend to react more with oxygen causing oxidative stress in living cells; therefore, the excessive use of processed vegetable oils may pose risk for human health. In the spectral analysis, Raman peaks at 1063 and 1127 cm⁻¹ represent out‐of‐phase and in‐phase aliphatic C C stretch for saturated fatty acids. The peak at 1300 cm⁻¹, labeled for alkane, decreases with increase in the double bond contents (unsaturation). Further, the Raman peak at 1655 cm⁻¹ showed a monotonic increase as a function of unsaturation. The double bond contents in the Raman spectra from 1650–1657 cm⁻¹ represent unsaturated fatty acids that changes during the synthesis of spreads and banaspati ghee. Desi ghee, extracted from cow and buffalo milk, showed distinctive Raman peaks at 1650 and 1655 cm⁻¹, which originates because of isomers of conjugated linoleic acid. These Raman shifts differentiated desi ghee from other artificially produced banaspati ghee, spreads, and oils. Conjugated linoleic acid has proved to be anti‐carcinogenic, anti‐inflammatory, and anti‐allergic properties; therefore, the limited use of desi ghee may reduce the risk of cardiac diseases. Principal component analysis has been applied on the Raman spectra that clearly differentiated desi ghee, mono‐unsaturated extra virgin olive oil, and extra virgin olive oil spread from other oils, oil mixtures, spreads, and ghee. In addition, principal component analysis has been blindly applied successfully on 13 unknown samples to classify them with reference to the known ghee sample. Copyright © 2016 John Wiley & Sons, Ltd.     

Resonance Raman spectroscopy of carbon nanotubes: pressure effects on G-mode

We use 488 and 568 nm laser Raman spectroscopy under high pressure to selectively follow evolution of Raman G-mode signals of single-walled carbon nanotubes (SWCNTs) of selected diameters and chiralities ((6, 5) and (6, 4)). The G-mode pressure coefficients of tubes from our previous work are consistent with the thick-wall tube model. Here we report the observation of well-resolved G-minus peaks in the Raman spectrum of SWCNTs in a diamond-anvil cell. The pressure coefficients of these identified tubes in water, however, are unexpected, having the high value of over 9 cm^?1 GPa^?1 for the G-plus and the G-minus, and surprisingly the shift rates of the same tubes in hexane have clearly lower values. We also report an abrupt increase of G-minus peak width at about 4 GPa superposed on a continuous peak broadening with pressure.