Perpendicular magnetization in Fe/Ni bilayers on GaAs(0 0 1)

Following the concept of spin-injection into a semiconductor-based device, a ferromagnetic element (like a GMR multilayer structure) can be used as a spin filter. A high spin-polarization of the electrons can be realized by the preparation of a monocrystalline multilayer structure consisting of ultrathin films of a high magnetic polarization. In the case of ultrathin films, the manipulation of the easy-axis of magnetization is possible, by changing the anisotropy terms contributing to the effective anisotropy of the structure. We report on the structural and magnetic properties of Ni/Fe and Fe/Ni bilayers epitaxially grown on GaAs(0 0 1). By a proper choice of Fe and Ni sequences (Fe/Ni/GaAs) and their thickness (up to 3 ML of Fe on the top of Ni), the rotation of magnetization from the in-plane to the out-of-plane direction was achieved.     

Magnetic anisotropy of epitaxial Fe layers grown on Si(0 0 1)

The magnetic properties of epitaxial iron films up to 80 monolayers (ML) thickness grown on Si(0 0 1) by using a template technique were investigated by means of superconducting quantum interference device and magneto-optic Kerr effect techniques. The thinnest films investigated (∼3 ML) exhibit a composition close to Fe₃Si with a Curie temperature below room temperature (RT) and strong out-of-plane remanent magnetization that reflects the presence of a dominant second order surface anisotropy term. Thicker films (⩾4 ML) are ferromagnetic at RT with remanent magnetization in film-plane and a composition closer to pure Fe with typically 8–10% silicon content. When deposited at normal incidence such films show simple in-plane fourfold anisotropy without uniaxial contribution. The relevant fourth-order effective anisotropy constant K₄^eff was measured versus film thickness and found to change its sign near 18 ML. The origin of this remarkable behavior is investigated by means of a Néel model and mainly traced back to fourth-order surface anisotropy and magneto-elastic effects related to the large biaxial in-plane compressive strain up to 3.5% in the thinnest (⩽25 ML) films.     

Transition of magnetic anisotropy in Ni/GaAs (0 0 1) observed by magnetization and ferromagnetic resonance

Polycrystalline thin Ni films deposited onto GaAs (0 0 1) show a transition of the magnetic anisotropy depending on its thickness. The anisotropy is perpendicular to the film plane for the thicknesses of the film ⩽12 nm. This becomes in-plane in the films having thicknesses ⩾15 nm. The films are deposited onto the n-type GaAs (0 0 1) substrate by the usual thermal evaporation method and also by the electron beam evaporation in ultra high vacuum onto a GaAs epilayer in the standard molecular beam epitaxy system. The magnetization and ferromagnetic resonance (FMR) are observed in the temperature range from 4.2 to 300 K. For the discussion of the microscopic origin of the anomalous properties in magnetization and FMR experiments, the experimental results are reviewed by introducing a uniaxial anisotropy, which is calculated from the easy-axis and hard-axis magnetization data. This calculated anisotropy is able to explain the temperature and angle dependency of the FMR spectra of the Ni films. Hence the magnetization and FMR spectra are in agreement with the type of the anisotropy and its temperature dependency. In addition to these, the temperature dependence of the in-plane magnetic anisotropy is able to explain the previously reported anomalous effect of reducing the squareness at low temperatures in Ni/GaAs.     

Structural and magnetic properties of BCC Fe/Co (0 0 1) superlattices

In thin layered Fe/Co (0 0 1), grown on MgO (0 0 1), both Fe and Co crystallize in the body-centered cubic (BCC) structure, as seen in a series of superlattices where the layer thickness of the components is varied from two to twelve atomic monolayers. These superlattices have novel magnetic properties as observed by magnetization and polarized neutron reflectivity measurements. There is a significant enhancement of the magnetic moments of both Fe and Co at the interfaces. Furthermore, the easy axis of the system changes from [1 0 0] for films of low cobalt content to [1 1 0] for a Co content exceeding 33%. No indication of a uniaxial anisotropy component is found in any of the samples. The first anisotropy constant (K₁) of BCC Co is found to be negative with an estimated magnitude of 110 kJ/m³ at 10 K. In all cases, the magnetic moments of Fe and Co have parallel alignment.     

Structural and magnetic properties of thin epitaxial Fe films on (1 1 0) GaAs prepared by metalorganic chemical vapor deposition

Iron films have been grown on (1 1 0) GaAs substrates by atmospheric pressure metalorganic chemical vapor deposition at substrate temperatures (T_s) between 135°C and 400°C. X-ray diffraction (XRD) analysis showed that the Fe films grown at T_s between 200°C and 330°C were single crystals. Amorphous films were observed at T_s below 200°C and it was not possible to deposit films at T_s above 330°C. The full-width at half-maximum of the rocking curves showed that crystalline qualities were improved at T_s above 270°C. Single crystalline Fe films grown at different substrate temperature showed different structural behaviors in XRD measurements. Iron films grown at T_s between 200°C and 300°C showed bulk α-Fe like behavior regardless of film thickness (100–6400 Å). Meanwhile, Fe films grown at 330°C (144 and 300 Å) showed a biaxially compressed strain between substrate and epilayer, resulting in an expanded inter-planar spacing along the growth direction. Magnetization measurements showed that Fe films (>200 Å) grown at 280°C and 330°C were ferromagnetic with the in-plane easy axis along the [1 1 0] direction. For the thinner Fe films (⩽200 Å) regardless of growth temperature, square loops along the [1 0 0] easy axis were very weak and broad.     

Nonlinear magnetoelastic effects in ultrathin epitaxial FCC Co(0 0 1) films:: an ab initio study

Those linear and nonlinear magnetoelastic coupling coefficients which determine the magnetostrictive stress and the strain-induced out-of-plane magnetic anisotropy in epitaxially grown FCC Co(0 0 1) films are calculated by the ab initio density functional electron theory. The nonlinear couplings have a strong effect on the change Δσ₁^m of the in-plane magnetostrictive stress resulting from a change of the magnetization direction from [0 1 0] to [1 0 0], but a negligibly small effect on the out-of-plane anisotropy e_MCA. The calculations confirm the experimental result that the measured out-of-plane anisotropy cannot be totally attributed to volume magnetoelastic effects. Estimates are given for the nonlinear magnetoelastic coupling coefficients m₁^γ,2 and m₂^γ,2.     

In-plane uniaxial magnetic anisotropy of thin Fe layers on Si(1 1 1) induced upon grazing deposition of a Si capping layer

We demonstrate that an in-plane uniaxial magnetic anisotropy can be induced in Fe films grown on Si(1 1 1) by means of an appropriate Si capping layer. It is shown that grazing-incidence Si deposition reduces the three-fold symmetry of the body-centered-cubic (BCC) Fe(1 1 1) surface to two-fold, thus generating a surface-type uniaxial in-plane magnetic anisotropy contribution. The relevant magnetic easy axis direction depends in a critical way on the azimuth of the Si evaporation flux with respect to the Fe crystal surface directions. A simple qualitative model based on the change of the Fe surface by inhomogeneous chemical reaction with Si is proposed to interpret the magnetic anisotropy evolution.     

FMR investigation of magnetic anisotropies in Fe/Au superlattices

Fe(xML)/Au(xML) superlattices (1⩽x⩽4, ML: monatomic layer thickness) have been investigated by the ferromagnetic resonance method at room temperature. It has been confirmed that out-of-plane anisotropy field H_u shows oscillatory behavior as a function of Fe layer thickness with a period of 1 ML as reported previously from magnetization measurements. In addition, we have found that the in-plane fourfold anisotropy field H₂ oscillates in a similar manner. The easy magnetization axis for x⩾2.25 is Fe [1 1 0] in contrast with the case of bulk Fe, and the values of H₂ show maxima for x=2.5 and 3.5, suggesting that the atomic steps at interfaces are formed along the Fe [1 1 0] direction. Furthermore, the interface roughness for x=non-integer causes wide distributions of H_u and H₂ compared to those for x=integer with flat interfaces.     

Exchange coupling of Co/Cr(0 0 1) superlattices for in-plane and perpendicular anisotropy

We have investigated the exchange coupling of Co/Cr(0 0 1) superlattices by polar and longitudinal magneto-optical Kerr effect measurements, by varying both the Co and Cr film thicknesses. At a Co thickness of ≈10 Å a nearly perpendicular anisotropy is found with antiferromagnetic order in the range of 5–15 Å of Cr thickness. For these superlattices the magnetization curve starting from remanence to saturation is characterized by a surface spin-flip transition at low field, followed by domain wall nucleation and motion, and finally by a coherent spin rotation with increasing field. Antiferromagnetic coupling is also observed for superlattices with thicker Co layers and with in-plane magnetic anisotropy.     

Spin-engineering in the Co75Fe25/Cu(1 1 0) system

We present results on the growth and magnetic anisotropies of Co₇₅Fe₂₅ films grown on a Cu(1 1 0) single crystal. Angular dependent MOKE measurements show a thickness dependent, in-plane rotation of the easy axis of magnetisation of up to 60° from the [0 0 1] direction (towards [−1 1 0]). For a film thickness of 5 ML, just greater than that required for the onset of ferromagnetism, uniaxial anisotropy is observed with the easy axis along the [0 0 1] direction. As the film thickness increases this is seen to rotate in-plane towards the [−1 1 0] direction as the contribution from the cubic anisotropy constant grows. At a film thickness of 9 ML there is predominantly cubic anisotropy and at 10 ML the easy axis is rotated to 150° with respect to the [1 −1 0] axis, where it is stabilised.     

Use of film thickness and Cu additive to improve (0 0 1) texture in MgO/FePtCu(C) bilayers

A multilayer structure has been proposed that demonstrates improved (0 0 1) texture for FePt-based L1₀ perpendicular media. Achieving a strong perpendicular magnetic anisotropy requires aligning the L1₀ crystallographic c-axis along the film normal. The ordered L1₀ FePt structure is tetragonal with a c/a ratio close to 0.965. This makes discriminating between the three crystallographic variants ([1 0 0], [0 1 0], and the desired [0 0 1]) difficult. Alloying FePt with Cu to reduce the c/a ratio and using a multilayer approach to keep the magnetic layers thin results in a structure with an adjustable M_rt and a strong (0 0 1) texture (rocking curve widths around 2°). This is a remarkable improvement in texture from pure FePt multilayered films or monolithic FePt(X) films. The proposed [MgO(2 nm)/Fe_50−xPt₅₀Cu_x(5 nm)]_×n structure limits grain size in the vertical (perpendicular) direction albeit not in the plane of the film. Carbon can be added to the FePtCu layer to reduce the grain size with minimal degradation of the (0 0 1) orientation.     

Optical properties of Cr/Fe(t)/MgO (0 0 1) thin films

In this work we report on the optical properties of single-crystalline iron thin films. For this, Cr-capped Fe films with thickness, t, in the range 30–300 Å were prepared on MgO (0 0 1) by DC magnetron sputtering, and then studied by optical absorption technique within the range from 1.0 to 3.6 eV. All measurements were carried out at room temperature using a fiber optics spectrophotometer. The intensity of the transmitted light decreases with increasing film thickness. The optical constants of the films are deduced from a model that considers the transmission of light by two absorbing films on an absorbing substrate. The absorption coefficient of the Fe films is also calculated from the transmission data. The absorption spectra show the following characteristics: (i) two large absorption peaks centered at about 1.20 and 2.65 eV; and (ii) a sharp step near 1.40 eV. These structures are associated with conventional interband transitions of the iron film.     

Magnetic and magneto-optical properties of MnSb films on various substrates

Magnetic and magneto-optical properties of MnSb films with different crystalline orientations on various semiconductors of GaAs(1 0 0), GaAs(1 1 1)A, B, and sapphire(0 0 0 1) have been measured by a vibrating sample magnetometer (VSM) and a home-made magneto-optical Kerr effect (MOKE) system. All these samples have their easy axes in the plane and show ferromagnetic properties. Among these samples, the film on GaAs(1 1 1)B has the lowest coercive force H_c and the largest squareness (SQ) value, whereas the film on GaAs(1 0 0) shows the largest H_c and the lowest SQ value. A large Kerr rotation angle of about 0.3° was observed at a wavelength of λ=632.8 nm for the film on sapphire in the field applied both parallel and perpendicular to the film plane. However, the MnSn films on other substrates do not have an observable Kerr rotation. The dynamic effect of the hysteresis was also measured using our MOKE system. As the frequency of applied magnetic field increases, the loop rounds off at the corners and the loop area increases.     

Fabrication of broadband poly(vinylidene difluoride-trifluroethylene) line-focus ultrasonic transducers for surface acoustic wave measurements of anisotropy of a (1 0 0) silicon wafer

This paper investigates a new method for fabrication of broadband line-focus ultrasonic transducers by sol–gel spin-coating the poly(vinylidene difluoride-trifluroethylene) [P(VDF-TrFE)] copolymer film on a concave fine-polished beryllium copper backing. The ferroelectric hysteresis loops of the P(VDF-TrFE) films spin-coated from different molar ratios of VDF/TrFE, 77/23 and 55/45, were measured to select the better mixture. Owing to the better acoustic matching to water, compared with lead zirconate titanate (PZT), the fabricated transducers show relatively wide bandwidth of approximately 50 MHz with high central frequency of 60 MHz obtained at the focal plane when a fused-quartz acts as a reflecting target. Each one of the two finished transducers has a focal length of 5 mm and a full aperture angle of 90°. After applying the specially developed digital signal processing algorithm to the defocusing experiment data, which is called V(f,z) analysis method based on two-dimensional fast Fourier transform (2-D FFT), the operating frequency can extend from several MHz to over 90 MHz. Surface acoustic wave (SAW) velocities of a typical (1 0 0) silicon wafer was measured along various directions between [1 0 0] and [0 1 0] to represent the anisotropic features.     

Spiral-like motion of the magnetization direction during reorientation in Ni-films on Cu(0 0 1)

The magnetization reorientation from in-plane to out-of-plane, occurring in Ni-films on Cu(0 0 1) around 9 to 10 ML, was studied in situ during growth by second harmonic generation. s→S and p→S polarization combinations of incident fundamental and reflected second harmonic light were used to show that reorientation proceeds in a spiral-like turn of the magnetization from parallel into the direction perpendicular to the steps, in accordance with reports in the literature that reorientation is driven by magneto-elastic forces.     

Ab initio study of structural and magnetic properties of cubic Fe4N(0 0 1) surface

First-principles calculations are employed to study the structural and magnetic properties of fully-relaxed cubic Fe₄N(0 0 1) surfaces with both Fe₂- and Fe₂N-termination. The results of surface stability calculations show that the (0 0 1) surface of Fe₄N is most possibly existing with Fe₂N-termination. Slab structures have more localized features in the density of states especially for the Fe₂N-terminated surface due to structure relaxation. The average magnetic moments of Fe atoms increase with increasing thickness of slabs. The calculated interlayer distances indicate that the decreases of d₁₂ and d₂₃ result in stronger hybridization and shorter bond distances between Fe2 atom in the second layer and other atoms in surface or the third layers, which lead to variation of magnetic moments with different slab thicknesses.     

Ellipsometric detection of GaAs(0 0 1) surface hydrogenation in H2 atmosphere

Optical properties of MBE-grown GaAs(0 0 1) surfaces have been studied by spectroscopic ellipsometry under dynamic conditions of ramp heating and cooling after desorption of passivating As-cap-layer with low pressure H₂ atmosphere (14 Torr) applied to the surface. The temperature dependence of GaAs pseudo-dielectric function with atomically smooth (0 0 1) surface carrying the fixed Ga-rich (4 × 2) reconstruction was obtained for the temperature range of 160–600 °C. It is shown ellipsometrically that GaAs(0 0 1) heating in the molecular hydrogen atmosphere results in the formation of hydrogenated layer on the surface.     

Growth and characterization of CoSi2 films on Si (1 0 0) substrates

In the present work, a special solid phase epitaxy method has been adapted for the preparation of CoSi₂ film. This method includes an epitaxial growth of Co films on Si (1 0 0) substrate, and in situ annealing of the Co/Si films in vacuum. It has been found that at the substrate temperature of 360°C, fcc cobalt film grows epitaxially on the Si (1 0 0) surface. The crystallographic orientation relations between fcc Co film and Si substrate determined from the electron diffraction result are: (0 0 1) Co//(0 0 1) Si, [1 0 0] Co//[1 1 0]Si. Upon annealing at temperatures range from 500 to 600°C, Co film reacts with Si substrate and transforms into CoSi₂. The CoSi₂ films prepared by this way are characterized by XTEM, XPS and AFM.     

Heteroepitaxial growth of thin InAs layers on GaAs(1 0 0) misoriented substrates: A structural and morphological comparison

Thin InAs epilayers were grown on GaAs(1 0 0) substrates exactly oriented and misoriented toward [1 1 1]A direction by atmospheric pressure metalorganic vapor phase epitaxy. InAs growth was monitored by in situ spectral reflectivity. Structural quality of InAs layers were studied by using high-resolution X-ray diffraction. No crystallographic tilting of the layers with respect to any kind of these substrates was found for all thicknesses. This result is discussed in terms of In-rich growth environment. InAs layers grown on 2° misoriented substrate provide an improved crystalline quality. Surface roughness of InAs layers depend on layer thickness and substrate misorientation.     

A high (0 0 1)-oriented CoPt/Ag film deposited on glass substrate

The magnetic properties and structures of CoPt_15 nm/Ag_0−100 nm films deposited by DC magnetron sputtering on glass substrates have been studied. The (0 0 1) texturing was improved by introducing an Ag underlayer. As the Ag underlayer thickness was 100 nm, a nearly perfect (0 0 1)-textured CoPt film was obtained.