Carbon nanotube mode lockers with enhanced nonlinearity via evanescent field interaction in D-shaped fibers

We demonstrate a novel passive mode-locking scheme for pulsed lasers enhanced by the interaction of carbon nanotubes (CNTs) with the evanescent field of propagating light in a D-shaped optical fiber. The scheme features all-fiber operation as well as a long lateral interaction length, which guarantees a strong nonlinear effect from the nanotubes. Mode locking is achieved with less than 30% of the CNTs compared with the amount of nanotubes used for conventional schemes. Our method also ensures the preservation of the original morphology of the individual CNTs. The demonstrated pulsed laser with our CNT mode locker has a repetition rate of 5.88 MHz and a temporal pulse width of 470 fs.     

All-fiber pulsed lasers passively mode locked by transferable vertically aligned carbon nanotube film

An all-fiber passive laser mode locking is realized with a vertically aligned single-walled carbon nanotube film that can be transferred onto an arbitrary substrate using only hot water. A D-shaped fiber is employed as the substrate for the evanescent field interaction of propagating light with the nanotubes. The scheme highlights the efficient interaction achieved by the nanotube alignment as well as the dramatically simplified device preparation process. The demonstrated pulsed laser output has 2.9 nm of spectral full width at half-maximum and a 20.8 MHz repetition rate.     

Characterization of 60 GHz Multi Quantum well passively mode-locked laser under optical self-injection locking

The quality and pulse compression of the 60 GHz millimeter wave signals generated by 750 μm long InAlGaAs Multi Quantum Well (MQW) passively mode locked laser under free running and optical self-injection locked conditions are experimentally characterized in terms of longitudinal modes under certain bias currents that range from 24 mA to 90 mA. Initially, the MQW laser is characterized in free running condition with no external injection. The measurements reflect that the free spectral range of laser under test is around 61 GHz and exhibit more than 22 lasing modes. The laser is then integrated into low phase noise self-injection locking oscillator by feeding a part of output RF signal back into the laser cavity to enhance passive mode locking. By doing so the microwave line width of our laser is reduced from 900 kHz to 24 kHz with significant increase in output of resultant beat tones which exhibits strong passive mode locking. This is the first time that the free running microwave line width of MQW laser is reduced up to this level. It is evident from our experimental investigation that as we increase the power and phase correlation between different longitudinal modes inside laser cavity through optical self-injection, the strength of the passively mode locked mechanism is significantly increased and the phase noise of radio frequency signal is drastically reduced.     

A miniature electron beam pumped laser

The 1.73 μm XeI laser has been operated in a fully continuous mode using a table-top electron beam pumped laser setup. A 12 keV electron beam sent through a 300 nm thick silicon nitride membrane into a laser gas mixture of typically 600 mbar gas pressure was used for pumping. A low loss cavity was installed, resulting in a very low pumping power of 37 mW to reach laser threshold. The geometrical conditions for the laser setup such as the shape of the beam pumped volume and its overlap with the optical mode volume are discussed. The laser scheme has been clearly identified as a recombination laser scheme by operating the laser in pulsed mode and observing the time structure of the laser pulse.     

SnS Nanosheets for 105th Harmonic Soliton Molecule Generation

As a member of the 2D group IV monochalcogenides (MX; M = Sn, Ge; X = S, Se), SnS has attracted great interest due to its outstanding optical, electrical, and optoelectronic properties. Especially, SnS nanosheets material have a large absorption coefficient and high photoelectric conversion efficiency, it can be potentially used in optical modulators, saturable absorbers, solar cells, supercapacitors, and other optical devices. However, the nonlinear optical properties of SnS nanosheets and their applications in ultrafast photonics are seldom studied. In this paper, the nonlinear optical properties of SnS nanosheets have been characterized through a dual‐balance detection system, whose modulation depth is 5.8%. More importantly, 105th harmonic soliton molecule based on SnS saturable absorbers has been realized for the first time to the authors’ knowledge. A compact mode‐locked fiber laser with a pulse duration of 1.02 ps and a repetition rate of 459 MHz is realized near 1.5 µm. It is demonstrated that SnS nanosheets have outstanding nonlinear properties and play an extremely important role in the field of ultrafast photonics.     

基于空间滤波的光纤激光被动相位锁定技术研究

基于空间滤波的被动相位锁定,对掺Yb光纤激光阵列的相干组束进行了理论和实验研究.分析了基于空间滤波光反馈相位锁定的原理,研究了远场相干光斑Strehl比与激光波长及光谱带宽的关系.建立了二维四路掺Yb光纤放大器阵列的被动相位锁定实验系统,实现了稳定的相干耦合激光输出,远场光斑Strehl比为0.77.测得输出激光光谱中单个纵模的带宽约为9.1 GHz,与理论计算符合较好. 关键词： 光纤激光 相干合成 环形腔     

Whispering gallery mode microlasers and refractive index sensing based on single polymer fiber

The realization of whispering gallery mode (WGM) lasing in polymer fibers is hindered by an appropriate method to dissolve the polymer and the gain material. In this work, microfibers fabricated by directly drawing from a dye doped polymer solution are exhibited as high quality microlasers and microsensors. Multi‐mode and even single‐mode lasing is observed from the fiber under optical pumping at room temperature. The linewidth of lasing mode is narrower than 0.09 nm. The lasing mechanism is unambiguously verified by comprehensive spectroscopic analysis and ascribed to WGMs. Diameter‐ and polarization‐dependent lasing characteristics are systematically investigated, showing good agreement with the theoretical calculation. Particularly, application of the fiber laser for refractive index sensing based on resonant shift of lasing mode is demonstrated and the sensitivity up to about 300 nm/RIU is achieved. The promising potential of high quality polymer microfibers as optical sensors and multi‐function components for flexible photonic integrated systems is highly expected.     

Highly Efficient Excitation of Surface Plasmons Using a Si Gable Tip

A compact and highly efficient technique to excite SPP mode at an Au/SiO₂ interface by using an engineered high index (silicon) gabled tip at the 1550 nm wavelength has been proposed. The optimized geometry of the Si tip enables a highly efficient excitation of the single interface SPP mode through near field interaction in an ultra‐compact setup. An experimental demonstration of the proposed scheme is also presented in the paper which converts 25.5% of the total input power to an SPP mode. With an improved fabrication, this efficiency can reach as high as 52%. The device is compact, facilitates on‐chip excitation of the SPP, its fabrication is compatible with the standard Si fabrication processes, and, as such it is expected to be very useful in the design of future integrated photonic circuits as well as integrated sensors. Also, this scheme can find applications in studying nonlinear characteristics of materials.     

Nonreciprocal Mechanical Squeezing in a Spinning Optomechanical System

A scheme for nonreciprocal mechanical squeezing (NMS) based on the three‐mode optomechanical interaction is proposed. In this scheme, a mechanical mode couples to a spinning whispering‐gallery‐cavity (WGC) mode and to an optical mode. An external laser is coupled into and thus drives the WGC via a waveguide. Mechanical squeezing results from the joint effect of the mechanical intrinsic nonlinearity and the quadratic optomechanical coupling, which, in the presence of strong thermal noise, is still considerable, while the nonreciprocity originates from the optical Sagnac effect. There are two NMS areas in the parametric space, one works for the laser driving from the left of the waveguide and another, from the right. For a given spinning speed of the WGC, the squeezing values in these two areas are equal if the corresponding detunings of the WGC differ from each other by two‐times of the Sagnac–Fizeau shift. At the red‐detuning resonance, the analytical results for the mechanical squeezing and cooling are obtained. The NMS scheme is robust to the thermal noise of the mechanical environment.     

Second-order optical susceptibility in doped III-V piezoelectric semiconductors in the presence of a magnetostatic field

A detailed analytical investigation of second-order optical susceptibility has been made in moderately doped III-V weakly piezoelectric semiconductor crystal, viz. n-InSb, in the absence and presence of an external magnetostatic field, using the coupled mode theory. The second-order optical susceptibility arises from the nonlinear interaction of a pump beam with internally generated density and acoustic perturbations. The effect of doping concentration, magnetostatic field and pump intensity on second-order optical susceptibility of III-V semiconductors has been studied in detail. The numerical estimates are made for n-type InSb crystals duly shined by pulsed 10.6 μm CO₂ laser and efforts are made towards optimising the doping level, applied magnetostatic field and pump intensity to achieve a large value of second-order optical susceptibility and change of its sign. The enhancement in magnitude and change of sign of second-order optical susceptibility, in weakly piezoelectric III-V semiconductor under proper selection of doping concentration and externally applied magnetostatic field, confirms the chosen nonlinear medium as a potential candidate material for the fabrication of nonlinear optical devices. In particular, at B ₀ = 14.1 T, the second-order susceptibility was found to be 3.4 × 10^-7 (SI unit) near the resonance condition.     

Phase and spectral properties of optically injected semiconductor lasers

The main control parameters of a single mode semiconductor laser submitted to an injected external signal are the power and the frequency of the injected signal. Following their magnitude, many phenomena can be observed such as phase locking, frequency locking, frequency generation, push-pull effects, hysteresis phenomena and chaos,... We show here that the spectral signature of the slave laser enables a better understanding of the the nonlinear interaction between the two competing sources: the spontaneous emission and the external field for which spectra are equally amplified through the active medium. This amplification is then strongly dependent on their coherency. We describe the role of the injected laser as a filter and an amplifier. It follows that the laser can be used to process information in ways that are not yet completely exploited. To cite this article: S. Blin et al., C. R. Physique 4 (2003).     

Sensitive birefringence measurement in a high-finesse resonator using diode laser optical self-locking

We demonstrate a new method to measure weak birefringence of dielectric mirrors with excellent spatial resolution and sensitivity (<10^-7 radians). We exploit a well-known optical feedback scheme for line-width narrowing and frequency locking of a diode laser to a high-finesse cavity. Feedback comes from the intracavity field which builds up at resonance, selected by its change in polarization with respect to the incident field. This change, due to the residual birefringence of the cavity mirror coatings, was already exploited for birefringence measurements using an active laser-locking scheme. Here we measure the optical feedback rate as a function of rotation angle of one of the cavity mirrors (around the cavity axis). A stable feedback signal is obtained since the laser, as soon as it locks to a cavity resonance, effectively behaves as a monochromatic source. By fitting the data with a theoretical expression, we determine quantitatively the local birefringence vectors of both mirrors, which are around 10^-6 radians. Our scheme is simple, works with cavities of very high finesse (F∼10⁵), and is promising for measuring birefringence in gases induced by external fields. Received: 18 July 2001 / Final version: 14 March 2002 / Published online: 8 May 2002     

Ultrafast all-solid-state laser technology

Passively mode-locked diode-pumped solid-state lasers can provide practical high-power laser sources with pico- and femtosecond pulse durations. We use semiconductors not only to optically pump but also to cw mode-lock or Q-switch a solid-state laser. A novel saturable absorber design, the Antiresonant Fabry-Perot Saturable Absorber (A-FPSA), allows of using semiconductor saturable-absorber materials even though they are generally not well-matched to the characteristics required for diode-pumped solid-state lasers, i.e., the semiconductors tend to have too much optical loss, a too low saturation intensity, and a too low damage threshold. This paper gives an overview of passively mode-locked ion-doped crystalline solid-state lasers. In particular, we present a quantitative discussion of A-FPSA mode locking, and compare A-FPSA mode locking with other passive mode locking techniques such as KLM (Kerr Lens Mode locking).     

Few‐cycle,broadband, mid‐infrared optical parametric oscillator pumped by a 20‐fs Ti:sapphire laser

A few‐cycle, broadband, singly‐resonant optical parametric oscillator (OPO) for the mid‐infrared based on MgO‐doped periodically‐poled LiNbO₃ (MgO:PPLN), synchronously pumped by a 20‐fs Ti:sapphire laser is reported. By using crystal interaction lengths as short as 250 µm, and careful dispersion management of input pump pulses and the OPO resonator, near‐transform‐limited, few‐cycle idler pulses tunable across the mid‐infrared have been generated, with as few as 3.7 optical cycles at 2682 nm. The OPO can be continuously tuned over 2179‐3732 nm (4589‐2680 cm^‐1) by cavity delay tuning, providing up to 33 mW of output power at 3723 nm. The idler spectra exhibit stable broadband profiles with bandwidths spanning over 422 nm (FWHM) recorded at 3732 nm. The effect of crystal length on spectral bandwidth and pulse duration is investigated at a fixed wavelength, confirming near‐transform‐limited idler pulses for all grating interaction lengths. By locking the repetition frequency of the pump laser to a radio‐frequency reference, and without active stabilization of the OPO cavity length, an idler power stability better than 1.6% rms over >2.75 hours is obtained when operating at maximum output power, in excellent spatial beam quality with TEM₀₀ mode profile. Photograph shows a multigrating MgO:PPLN crystal used as a nonlinear gain medium in the few‐cycle femtosecond mid‐IR OPO. The visible light is the result of non‐phase‐matched sum‐frequency mixing between the interacting beams.     

Frequency comb expansion in a monolithic self‐mode‐locked laser concurrent with stimulated Raman scattering

The discovery of a novel phase‐locked frequency comb generated from a monolithic laser with the concurrent processes of self‐mode locking (SML) and stimulated Raman scattering (SRS) is reported. It is experimentally shown that the width of the Raman gain can be exploited to considerably expand the frequency comb of a monolithic SML crystal laser via the SRS process. At a pump power of 6.5 W, an output power of 140 mW in the Stokes wave with a pulse width as narrow as 2.9 ps at a pulse repetition rate of 6.615 GHz is obtained. The present finding not only provides useful insights into the monolithic intracavity SRS process but also paves the way for generating mode‐locked pulses based on monolithic self‐Raman crystals.     

Three‐dimensional optical laser lithography beyond the diffraction limit

Direct laser writing has become a versatile and routine tool for the mask‐free fabrication of polymer structures with lateral linewidths down to less than 100 nm. In contrast to its planar counterpart, electron‐beam lithography, direct laser writing also allows for the making of three‐dimensional structures. However, its spatial resolution has been restricted by diffraction. Clearly, linewidths and resolutions on the scale of few tens of nanometers and below are highly desirable for various applications in nanotechnology. In visible‐light far‐field fluorescence microscopy, the concept of stimulated emission depletion (STED) introduced in 1994 has led to spectacular record resolutions down to 5.6 nm in 2009. This review addresses approaches aiming at translating this success in optical microscopy to optical lithography. After explaining basic principles and limitations, possible depletion mechanisms and recent lithography experiments by various groups are summarized. Today, Abbe's diffraction barrier as well as the generalized two‐photon Sparrow criterion have been broken in far‐field optical lithography. For further future progress in resolution, the development of novel tailored photoresists in combination with attractive laser sources is of utmost importance.     

10 Gbps optical soliton transmission link using in-line SOA on standard SMF at 1.3 μm

In this paper, 10 Gbps optical soliton transmission link using in-line semiconductor optical amplifiers (SOAs) for already installed standard single mode fibers (SMF) at 1.3 μm wavelength has been reported. The pattern effect and the impact of chirp on pulse propagation after amplification have been investigated. The observations are based on modeling and simulation optical soliton transmission link. Optical soliton pulse transmission over distances of the order of several hundreds of kilometers has been shown with and without initial chirp.     

Femtosecond transform-limited Kerr-lens mode-locked dye lasers

Using SF6 glass plates as intracavity Kerr lenses and double-prism pairs for dispersion compensation, we achieve tunable femtosecond passive mode locking in rhodamine 590 (R6G) and 4-dicyanomethylene-2-methyl-16-p-dimethylaminostyryl-4H-pyran (DCM) dye lasers. The R6G laser produces transform limited 240–500 fs pulses between 577 and 606 nm, and the DCM laser produces 150 fs transform-limited pulses between 650 and 671 nm. We use dilute intracavity saturable-absorber jets to make the mode locking self-starting. Characteristics of the pulses and the stability regions of the lasers agree with general theories of passive mode locking.