层叠Blumlein线多开关导通时间分散性

高介电常数陶瓷储能脉冲形成线需要用到多开关触发的层叠Blumlein线结构。从形成线波过程理论出发，分析了多开关导通时间分散性对层叠Blumlein线及其输出波形的影响。主要包括两方面影响:其一是造成输出方波脉冲的前沿和后沿均出现阶梯形畸变；其二是使得各延迟导通的平行平板Blumlein线承受过电压，容易引起陶瓷储能介质的电击穿。在不单独考虑开关电感的理想情况下，利用PSpice电路程序模拟了开关导通时间分散性对四级层叠Blumlein线的影响，模拟结果与波过程理论分析一致。为减弱这些影响，提出了可行的解决方案。     

基于光导开关及层叠Blumlein线的纳秒脉冲源

设计了一台层叠Blumlein线型脉冲功率源。该脉冲源以平板型Blumlein线为储能器件,使用4个GaAs光导开关作为脉冲形成开关,通过4级Blumlein线层叠结构以获得更高输出电压。分别使用10 mm及3 mm间隙光导开关进行实验,比较了PSpice电路仿真与实验结果。实验测试显示,10 mm开关充电23.5 kV时上升沿较大,可能的原因是偏置电场较低时开关导通时间较长。测试了不同工作电压下功率源的输出电压,结果显示:在10 mm间隙开关条件下,充电23.5 kV时,负载上得到了53 kV的高压脉冲输出;3 mm开关充电13.9 kV时输出电压39.4 kV,输出效率70%。实验结果表明, 随着工作场强的提高,电压输出效率呈现先下降后上升最终趋于饱和的趋势。     

用于等离子体焦点装置的强流装置

研制了用于稠密等离子体焦点的强流装置,该装置采用八台低电感低内阻脉冲电容器和八个低感大电流、可控触发高压开关并联组成初级储能模块,高压开关同步击穿后产生μs级强电流经平行板传输线加载到负载。脉冲电容器和高压开关采用一体化设计,结构紧凑,使脉冲电容器与高压开关间的连接电感尽可能小;平板传输线为扇形结构,一个扇形平板传输线连接一个高压开关,平行板传输线可以将电感做得较小,有利于大电流回路的传输。在脉冲电容器充电20 kV时,假负载上可以得到500 kA的电流,电流上升时间约为3.7 μs。     

同轴-三平板型水介质脉冲输出开关实验研究

 设计了用于脉冲功率装置的4 MV水介质同轴 三平板型输出开关。该脉冲功率装置将由24路相同的独立模块组成，每路模块由Marx发生器、中间储能器、激光触发气体开关、脉冲形成线、水介质脉冲输出开关、脉冲传输线等组成。水介质脉冲输出开关是同轴 三平板结构水介质多通道自击穿开关，由输入输出电极、预脉冲屏蔽板和连接部件组成。进行了有预脉冲屏蔽板结构和无预脉冲屏蔽板结构的自击穿水开关实验研究。有预脉冲屏蔽板结构开关的输入、输出电极都是半球电极，直径分别是8 cm和5 cm；无预脉冲屏蔽板结构开关为针 板结构，输入电极为平板电极，输出电极为直径3 cm的电极棒。Marx发生器充电70 kV，开关的击穿电压为3 MV，放电电流为450 kA。在3 MV等级的击穿电压下，有预脉冲屏蔽板结构开关的抖动约6 ns，没有预脉冲屏蔽板结构开关的抖动减小至3 ns。     

同轴-三平板型水介质脉冲输出开关实验研究

设计了用于脉冲功率装置的4 MV水介质同轴 三平板型输出开关。该脉冲功率装置将由24路相同的独立模块组成，每路模块由Marx发生器、中间储能器、激光触发气体开关、脉冲形成线、水介质脉冲输出开关、脉冲传输线等组成。水介质脉冲输出开关是同轴 三平板结构水介质多通道自击穿开关，由输入输出电极、预脉冲屏蔽板和连接部件组成。进行了有预脉冲屏蔽板结构和无预脉冲屏蔽板结构的自击穿水开关实验研究。有预脉冲屏蔽板结构开关的输入、输出电极都是半球电极，直径分别是8 cm和5 cm；无预脉冲屏蔽板结构开关为针 板结构，输入电极为平板电极，输出电极为直径3 cm的电极棒。Marx发生器充电70 kV，开关的击穿电压为3 MV，放电电流为450 kA。在3 MV等级的击穿电压下，有预脉冲屏蔽板结构开关的抖动约6 ns，没有预脉冲屏蔽板结构开关的抖动减小至3 ns。     

基于PSpice的电爆丝断路开关数值仿真

电爆丝断路开关是在电感储能系统中广泛应用的断路开关,其具有结构简单、成本低、截断能力强的特点。介绍了电爆丝工作的基本原理,其本质为一个快速增长的电阻,利用高阻抗来实现断流。通过PSpice软件建立了电流通过电爆丝断路开关工作时,其电阻变化的模型,从而可以仿真电爆丝断路开关的工作过程。设计了一组电爆丝断路开关的实验,PSpice模型仿真结果同实验结果进行了比较。结果发现,该模型起爆时刻,产生电压幅值等方面和实验结果比较接近,说明该模型比较科学合理,对以后的电爆丝断路开关的设计具有较大的参考价值。分析了产生误差的原因及该种仿真方法的局限性。     

一种机械型超导开关的设计与初步实验

文中所述机械型超导开关是一种新型超导开关,其主要用做超导储能磁体的持续电流开关(persistentcurrent switch,简称PCS)。文章简要介绍机械型超导开关的原理并计算PCS的损耗,然后详述机械型超导开关的设计,最后描述初步实验结果。     

电爆炸箔断路开关的理论和实验研究

电感储能型脉冲功率调制器中的一个关键部件是断路开关。电爆炸金属丝（箔）断路开关是使用最广泛的一种。为了给今后开展更高功率断路开关研究奠定基础，开展了电爆炸箔断路开关的理论和实验研究。     

用于超导储能系统的变压器持续电流开关的研究

本基于变压器的特性提出了一种能用于超导储能系统的新型超导持续电流开关，即变压器持续电流开关。变压器原边线圈Ｔ１的匝数大于副边线圈的匝数，在变压器逼边设置彼此反接的两副边线圈Ｔ２和Ｔ３以减少开关的电感和避免变压器的铁芯饱和。     

600 kJ供能系统及其在轨道炮中的应用

 本文介绍了一种适合于电磁轨道炮使用的600 kJ供能系统。初级能源是电容器组。经过短路开关和电感储能线圈组成的转换电路，把能量输送给轨道炮。系统的主控开关和短路开关是金属接触型固体介质爆炸开关。本文推荐了一种爆炸开关闭合电阻随时间变化的经验模型。这套供能系统经过实验证明，它运行可靠、性能稳定。     

PSPICE controlled-source models of analogous circuit for Langevin type piezoelectric transducer

The design and construction of wide-band and high efficiency acoustical projector has long been considered an art beyond the capabilities of many smaller groups. Langevin type piezoelectric transducers have been the most candidate of sonar array system applied in underwater communication. The transducers are fabricated, by bolting head mass and tail mass on both ends of stacked piezoelectric ceramic, to satisfy the multiple, conflicting design for high power transmitting capability. The aim of this research is to study the characteristics of Langevin type piezoelectric transducer that depend on different metal loading. First, the Mason equivalent circuit is used to model the segmented piezoelectric ceramic, then, the impedance network of tail and head masses is deduced by the Newton's theory. To obtain the optimal solution to a specific design formulation, PSPICE controlled-source programming techniques can be applied. A valid example of the application of PSPICE models for Langevin type transducer analysis is presented and the simulation results are in good agreement with the experimental measurements.     

A two-beam method for extending the working range of electrostatic parallel-plate micro-actuators

Electrostatic actuation is widely used because of its rapid speed and low power consumption. The parallel-plate actuator is one of the most basic, but also most common electrostatic actuators for Micro Electro Mechanical System (MEMS) applications. The effective working range of parallel-plate actuator is limited to only one-third of the initial gap owing to the pull-in instability. Different strategies have been reported to extend the stable working range, but are mostly focused on improvement of the control circuit. In this paper, we aim to report some progress toward solution of the working range problem from the design of suspension beam. A suspension beam called “two-beam” is presented to achieve parallel-plate actuator with extended working range, but without penalties of complex control circuit and large actuation voltage. A bumper structure is employed in the design of two-beam to change the spring constant near the critical point of pull-in, and a two-layered polysilicon surface process is used to fabricate this two-beam structure. Theoretical calculation and numerical simulation indicate that the working range can be extended depending on the position and depth of the bumper. The fabrication of a 2×2 array of parallel-plate actuators suspended by four sets of two-beam is implemented, and a somewhat larger working range, i.e. about 50% of the initial gap is achieved in the experiment.     

层叠Blumlein纳秒脉冲形成线设计与实验

研究了一种结构紧凑型的多级层叠Blumlein纳秒脉冲形成线,从理论上分析了放电时回路各分布参数对层叠Blumlein脉冲形成线输出电压的影响,并利用PSpice模拟验证了各分布参数对层叠Blumlein脉冲形成线输出结果的影响,发现开关的导通电阻是制约输出电压幅值的主要因素,开关的分布电感对输出波形的影响大于负载分布电感的影响,基于时域有限差分法原理,利用XFDTD软件模拟了两级层叠Blumlein线的电磁耦合效应。开展了多级层叠Blumlein脉冲形成线实验,结果表明,基于陶瓷固态传输线和GaAs光导开关的层叠Blumlein脉冲形成线能够实现输出电压叠加,可用于产生ns量级脉宽的脉冲高压。     

高效层叠平行板Blumlein脉冲产生器性能分析

采用时空图和矩量法对单和多平行板Blumlein脉冲产生器的输出特性作了详细分析.数值计算表明, 为了获得良好的系统输出,开关的导通电阻必须尽可能小；为了获得最大的能量输出或最大的电压输出,所需采用的匹配负载电阻不同；多Blumlein层叠结构的电压匹配负载电阻可以通过单Blumlein的电压匹配负载来估计,而能量匹配负载电阻不能直接根据单Blumlein的能量匹配负载电阻来估算；Blumlein传输线的板间距与板宽之比决定了系统的电压匹配负载和能量匹配负载的大小,并显著影响匹配条件下的电压倍增因子和能量输出效率.     

A new design on broadband flextensional transducer

The new flextensional transducer presented is driven by a tube stacked by longitudinally polarized piezoelectric ceramic rings. The rings are compressed between two annulus steel end plates which are coupled by a dual convex aluminum shell with slotted gaps. The transducer is a free-flooded design with the interior of the tube open to the surrounding water. Three main vibrating modes including the cavity, the longitudinal and the radial can be utilized by appropriately coupling design to broaden the working bandwidth. A prototype is fabricated and measured. The results confirm the three vibrating modes mentioned above and the broad band of transmitting voltage response is gained successfully with difference less than 10 dB from 2200 Hz to 9000 Hz.     

Differential capacitance between circular stacked quantum dots

We have investigated the differential capacitance between two stacked, circular quantum dots. An expression defining such differential capacitance has been derived on the basis of that for the self-capacitance of a single quantum dot. By means of a self-consistent simulation we have obtained numerical results showing that the differential capacitance between the two dots is strongly influenced by shell-filling effects, and that the classical limit of the parallel-plate capacitor is retrieved when the two dots are in close proximity. Our results represent a contribution to the effort for the definition of a capacitance matrix for a complex system of quantum dots.     

A two-dimensional threshold voltage analytical model for metal-gate/high-k/SiO₂ /Si stacked MOSFETs

In this paper the influences of the metal-gate and high-k/SiO 2 /Si stacked structure on the metal-oxide-semiconductor field-effect transistor(MOSFET) are investigated.The flat-band voltage is revised by considering the influences of stacked structure and metal-semiconductor work function fluctuation.The two-dimensional Poisson’s equation of potential distribution is presented.A threshold voltage analytical model for metal-gate/high-k/SiO 2 /Si stacked MOSFETs is developed by solving these Poisson’s equations using the boundary conditions.The model is verified by a two-dimensional device simulator,which provides the basic design guidance for metal-gate/high-k/SiO 2 /Si stacked MOSFETs.     

Wave propagation in parallel-plate waveguides filled with nonlinear left-handed material

A theoretical investigation of field components for transverse electric mode in the parallel-plate waveguides has been studied. In this analysis two different types of waveguide structures have been discussed, i.e., (a) normal good/perfect conducting parallel-plate waveguide filled with nonlinear left-handed material and (b) high-temperature-superconducting parallel-plate waveguide filled with nonlinear left-handed material. The dispersion relations of transverse electric mode have also been discussed for these two types of waveguide structures.     

A two-dimensional threshold voltage analytical model for metal-gate/high-k/SiO2/Si stacked MOSFETs

In this paper the influences of the metal-gate and high-k/SiO 2 /Si stacked structure on the metal-oxide-semiconductor field-effect transistor（MOSFET） are investigated.The flat-band voltage is revised by considering the influences of stacked structure and metal-semiconductor work function fluctuation.The two-dimensional Poisson＇s equation of potential distribution is presented.A threshold voltage analytical model for metal-gate/high-k/SiO 2 /Si stacked MOSFETs is developed by solving these Poisson＇s equations using the boundary conditions.The model is verified by a two-dimensional device simulator,which provides the basic design guidance for metal-gate/high-k/SiO 2 /Si stacked MOSFETs.