Effects of Crossed Electric and Magnetic Fields on Shallow Donor Impurity Binding Energy in a Parabolic Quantum Well

We have calculated variationally the ground state binding energy of a hydrogenic donor impurity in a parabolic quantum well in the presence of crossed electric and magnetic fields. These homogeneous crossed fields are such that the magnetic field is parallel to the heterostructure layers and the electric field is applied perpendicular to the magnetic field. The dependence of the donor impurity binding energy to the well width and the strength of the electric and magnetic fields are discussed. We hope that the obtained results will provide important improvements in device applications, especially for a suitable choice of both fields in the narrow well widths.     

Effect of crossed electric and magnetic fields on donor impurity binding energy

By using an appropriate coordinate transformation, we have calculated variationally the ground state binding energy of a hydrogenic donor impurity in a quantum well in the presence of crossed electric and magnetic fields which are applied tilted at an angle to the layers. The dependence of the donor impurity binding energy on the well width, on the strength of the electric and magnetic fields, on the impurity position and on the directions of the external fields is discussed. PACS 71.55.Eq; 71.55.-i     

The effect of laser field intensity on polarizability in a quantum well

A systematic study of binding energy of the ground state of a hydrogenic donor in a quantum well is calculated in the presence of a uniform electric field for different measure of laser intensities. Binding energy of the ground state of a donor is calculated, within the effective mass approximation, with the Bessel and Airy functions. Polarizability of a laser dressed donor impurity in the presence of electric field is reported. It is observed that the polarizability (i) increases as intensity of the laser field increases (ii) increases with the electric field strength and (iii) increases drastically when both the fields are applied. The dependence of the donor binding energy on the well width, the laser field intensity and the electric field is discussed. Our results are in good agreement with the previous investigations for other heterostructures in the presence of laser intensity.     

Electric and magnetic field effects on the binding energy of a hydrogenic impurity in quantum well wires with different shapes

In this work, we directly calculate the ground state energies for an electron in quantum well wires (QWWs) with different shapes in the presence of applied electric and magnetic fields using the finite difference method. Then, we study the ground state binding energy of a hydrogenic impurity with a variational approach. We obtain the binding energy for QWWs consisting of the combinations of square and parabolic well potential. Our results indicate that the impurity binding energy depends strongly on the structural confinement and also, on the applied electric and magnetic field.     

Diamagnetic susceptibility of a laser dressed donor in a quantum well

The binding energy of laser dressed donor impurity is calculated under the influence of a magnetic field in a quantum well. The binding energy of the ground state of a donor is investigated, within the single band effective mass approximation, variationally for different concentrations at the well centre. The effect of laser and magnetic fields on diamagnetic susceptibility of the hydrogenic donor is reported. The Landau energy levels of electrons in the quantum well as a function of magnetic field are reported. The results show that the diamagnetic susceptibility (i) decreases drastically as intensity of the laser field increases (ii) increases with the magnetic field strength (iii) decreases as the Al-concentration decreases and (iv) a variation of increase in binding energy is observed when non-parabolicity is included and this effect is predominant for narrow wells. Our results are in good agreement with previous investigations for other heterostructures in the presence of laser intensity.     

Calculation of Binding Energies of the Ground and Excited States of a Donor in GaAs-A1xGal-xAs Step Quantum Wells

In this paper we present for the first time completely analytical variational expressions for calculating the binding energies of the low-lying bound states of a hydrogenic donor in a quantum well (QW). These expressions can be used for the problem of the binding energy of an impurity in a general manner, e.g. for calculating the binding energies of a donor associated with subband states of any order in the QW with any arbitrary potential profile. 70 demonstrate the utilization of these expressions we have theoretically studied the binding energies for the ground and a few low-lying excited etates of a hydrogenic donor in a stepped quantam well (SQW). The variations of the binding energies for these donor etates with impurity positions are investigated for different heights of the step potential. The numerical calculation results show that the binding-energy curves in the SQW, in contrast to the case of the flat quantum wells (FQW's), exhibit a non-symmetrical structure relative to the center of the QW and depend on the sub-barrier potential. The peak position in the binding energy curves shifts away from the region occupied by the sub-barrier as increasing sub-barrier height. The maximum in the binding energies increases as the step potential increaaes. These effects can be interpreted by referring to the variation of the electron probability-density distribution and of the lowest subband in the SQW. The shape of the binding-energy curves related to the 2po-like state is different from the other states. It is associated with the particular feature of the wave function of the 2po state in the QW.     

Electronic States of a Shallow Hydrogenic Donor Impurity in Different Shaped Semiconductor Quantum Wells

The shallow hydrogenic donor impurity states in square, V-shaped, and parabolic quantum wells are studied in the framework of effective-mass envelope-function theory using the plane wave basis. The first four impurity energy levels and binding energy of the ground state are more easily calculated than with the variation method. The calculation results indicate that impurity energy levels decrease withthe increase of the well width and decrease quickly when the well width is small.The binding energy of the ground state increases until it reaches a maximum value,and then decreases as the well width increases. The results are meaningful andcan be widely applied in the design of various optoelectronic devices.     

Hydrostatic pressure and electric and magnetic field effects on the binding energy of a hydrogenic donor impurity in InAs Pöschl-Teller quantum ring

We consider the effects of electric and magnetic fields as well as of hydrostatic pressure on the donor binding energy in InAs Pöschl-Teller quantum rings. The ground state energy and the electron wave function are calculated within the effective mass and parabolic band approximations, using the variational method. The binding energy dependencies on the electric field strength and the hydrostatic pressure are reported for different values of quantum ring size and shape, the parameters of the Pöschl-Teller confining potential, and the magnetic field induction. The results show that the binding energy is an increasing or decreasing function of the electric field, depending on the chosen parameters of the confining potential. Also, we have observed that the binding energy is an increasing/decreasing function of hydrostatic pressure/magnetic field induction. Likewise, the impurity binding energy behaves as an increasing/decreasing function of the inner/outer radii of the quantum ring nanostructure.     

The hydrostatic pressure and electric field effects on the normalized binding energy of hydrogenic impurity in a GaAs/AlAs spherical quantum dot

A theoretical study of combined effects of the hydrostatic pressure and the electric field on the subband ground state energy and on the normalized ground state binding energy of a hydrogenic donor impurity on center located in a GaAs/AlAs spherical quantum dot with fixed dot radius is presented. The study is performed in the framework of the effective mass and parabolic band approximations and using a variational procedure. As a key result, it may be possible to gather high resolution maps of electric field on the studied structure with described technique.     

Impurity-related electronic properties in quantum dots under electric and magnetic fields

This paper presents a systematic study of the ground-state binding energies of a hydrogenic impurity in quantum dots subjected to external electric and magnetic fields.The quantum dot is modeled by superposing a lateral parabolic potential,a Gaussian potential and the energies are calculated via the finite-difference method within the effectivemass approximation.The variation of the binding energy with the lateral confinement,external field,position of the impurity,and quantum-size is studied in detail.All these factors lead to complicated binding energies of the donor,and the following results are found:(1) the binding energies of the donor increase with the increasing magnetic strength and lateral confinement,and reduce with the increasing electric strength and the dot size;(2) there is a maximum value of the binding energies as the impurity placed in different positions along the z direction;(3) the electric field destroys the symmetric behaviour of the donor binding energies as the position of the impurity.     

Hydrogenic impurity states in wurtzite GaN/AlGaN coupled quantum dots

The ground-state binding energy of a hydrogenic donor impurity in wurtzite (WZ) GaN/AlGaN coupled quantum dots (QDs) is calculated by means of a variational method, considering the strong built-in electric fields caused by the piezoelectricity and spontaneous polarizations. The strong built-in electric fields induce an asymmetrical distribution of the ground-state binding energy with respect to the center of the coupled QDs. If the impurity is located at the low dot, the ground-state binding energy is insensitive to the interdot barrier width of WZ GaN/AlGaN coupled QDs.     

External electric field and hydrostatic pressure effects on the binding energy and self-polarization of an off-center hydrogenic impurity confined in a GaAs/AlGaAs square quantum well wire

Based on the effective-mass approximation within a variational scheme, binding energy and self-polarization of hydrogenic impurity confined in a finite confining potential square quantum well wire, under the action of external electric field and hydrostatic pressure, are investigated. The binding energy and self-polarization are computed as functions of the well width, impurity position, electric field, and hydrostatic pressure. Our results show that the external electric field and hydrostatic pressure as well as the well width and impurity position have a great influence on the binding energy and self-polarization.     

Electric field effect on the binding energy of a hydrogenic impurity in coaxial GaAs/Al xGa1 − x As quantum well-wires

The ground state binding energy of a hydrogenic impurity in a coaxial cylindirical quantum well wire system subjected to an external electric field applied perpendicular to the symmetry axis of the wire system is studied within a variational scheme. Binding energy calculations were performed as functions of the inner barrier thickness and the electric field for two different impurity positions. The main result is that a sharp decrease in the binding energy, which may be important in device applications, occurs in certain conditions.     

纤锌矿GaN柱形量子点中类氢施主杂质态

在有效质量近似和变分原理的基础上,选取含两个变分参数的波函数,研究了纤锌矿结构的GaN/AlxGa1-xN单量子点中类氢施主杂质体系的结合能随量子点(QD)尺寸以及杂质在量子点中位置的变化,并与以前使用不同尝试波函数的计算结果进行了比较。结果表明:由我们选取的两变分参数波函数得到的结果与前人选取的两变分参数波函数得到的结果相比有所改进,而与选取一个变分参数波函数得到的结果一致。同时我们还计算了体系的维里定理值随量子点半径的变化情况,所得结果与前人工作结果一致,说明本文选取的两变分参数波函数能很好地描述柱形量子点中施主杂质态的运动。     

Simultaneous effects of dielectric mismatch and electric field on the electronic properties in Si nanodots

By using the finite element method within the effective mass approximation, the effects of both dielectric confinement and electric field on the shallow-donor binding energy and polarizability in spherical Si quantum dots are investigated. It is found that: (i) the ground state binding energy is significantly increased by the dielectric mismatch at the dot interface, (ii) in the freestanding nanodot the competition between the electric field, polarization charges induced at interfaces and impurity position determines the symmetry of the electron probability distribution; (iii) the donor polarizability decreases with electric field strength and this effect is more pronounced for large dielectric mismatches. Therefore, the electronic properties of the nanocrystals could be tuned by proper tailoring of the surrounding medium dielectric constant as well as by varying the electric field. The normalized binding energy of an on-center hydrogenic donor is also been estimated and the results are in good agreement with the previous reported values.     

无限深量子阱中强耦合极化子的基态结合能

研究了无限深量子阱中极化子的基态性质,采用线性组合算符和变分相结合的方法导出了强耦合极化子的振动频率λ、基态能量E₀和基态结合能E_b,讨论了阱宽L和电子-LO声子耦合强度α对强耦合极化子的振动频率λ、基态能量E₀和基态结合能E_b的影响。通过数值计算,结果表明:强耦合极化子的振动频率和基态结合能随阱宽L的增大而减小,随电子-LO声子耦合强度α的增强而增大;基态能量随阱宽L的增大而减小,其绝对值随电子-LO声子耦合强度α的增强而增大;当量子阱阱宽L趋近于无限大和无限小两种极限情况下,分别与三维和二维极化子的结果相一致。     

Magnetic field effect on the binding energy of a hydrogenic impurity in coaxial GaAs/ AlxGa1−xAs quantum well wires

We propose a coaxial cylindrical quantum well wire (QWW) system, in which two conducting cylindrical layers are separated by an insulating layer. The ground state binding energy of a hydrogenic impurity subjected to uniform magnetic field applied parallel to the wire axis is studied within a variational scheme as a function of the inner barrier thickness for two different impurity positions and various barrier potentials. The ground state energy and wave function in the presence of a magnetic field is directly calculated using the fourth-order Runge–Kutta method. It is found that the binding energy in critical barrier thickness shows a sharp increase or decrease depending on the impurity position and magnetic field strength. The main result is that a sharp variation in the binding energy, which may be important in device applications, depends strongly not only on the location of the impurity but also on the magnetic field and the geometry of the wire.     

Polaronic effects on the energy levels of a double donor impurity in quantum wells in the presence of a magnetic field

In the presence of a magnetic field the Hamiltonian of the single or double polaron bound to a helium-type donor impurity in semiconductor quantum wells (QWs) are given in the case of positively charged donor center and neutral donor center. The couplings of an electron and the impurity with various phonon modes are considered. The binding energy of the single and double bound polaron in Al_xlGa _1-xlAs/GaAs/Al_xrGa _1-xrAs QWs are calculated. The results show that for a thin well the cumulative effects of the electron-phonon coupling and the impurity-phonon coupling can contribute appreciably to the binding energy in the case of ionized donor. In the case of neutral donor the contribution of polaronic effects are not very important, however the magnetic field significantly modifies the binding energy of the double donor. The comparison between the binding energies in the case of the impurity placed at the quantum well center and at the quantum well edge is also given. Received 16 February 1999     

Impurity optical absorption in parabolic quantum well

Optical absorption in GaAs parabolic quantum well in the presence of hydrogenic impurity is considered. The absorption coefficient associated with the transitions between the upper valence subband and donor ground state is calculated. The impurity ground state wave function and energy are obtained using the variational method. Dependence of the absorption spectra on impurity position in quantum well was investigated. It is shown, that along with quantum well width decrease the absorption threshold shifts to higher frequencies. Results obtained within frames of parabolic approximation are compared with results for rectangular infinite-barrier quantum well case. The acceptor state → conduction band transitions considered as well.