Femtosecond-laser-induced-crystallization and simultaneous formation of light trapping microstructures in thin a-Si:H films

We report the observation of crystallization and simultaneous formation of surface microstructures in hydrogenated amorphous silicon (a-Si:H) thin films as one step laser processing. Light trapping microstructures of around 300 nm in height were formed on a-Si:H films of thickness in the range of 1.5 μm to 2 μm deposited on soda lime glass after exposure to femtosecond laser pulses. Scanning electron microscope (SEM) images show the formation of spikes that are around 1 μm part and their heights could be controlled by the laser fluences. Atomic force microscope (AFM) images were taken to study the roughness created on the surface. The mean roughness of the textured surface increases with laser fluence at smaller power densities, and for power densities beyond 0.5 J/cm² the film removal deteriorates the texturing. X-ray diffraction results indicate the formation of a nano-crystalline structure with (111) and (311) crystal orientation after the laser treatment. The observed black color and enhanced optical absorption in the near infrared region in laser treated films may be due to a combined effect of light trapping in the micro-structured silicon surface because of multiple total internal reflections, phase change in the film, possible defect sites induced after laser treatment and formation of SiO_x. Demonstration of light trapping microstructures in thin a-Si:H films and simultaneous crystallization could provide new opportunities for optoelectronic devices. PACS 42.55.Px; 42.62.Cf; 81.05.Ge     

Sub-wavelength micromachining of silica glass by irradiation of CO<Subscript>2</Subscript> laser with Fresnel diffraction

We investigated a simple and productive micromachining method of silica glass by ablation using a TEA CO₂ laser (10.6 μm) with a spatial resolution down to sub-wavelength scale. The silica glass was irradiated by the TEA CO₂ laser light through a copper grid mask with square apertures of 20×20 μm² attached to the silica glass surface. After the irradiation, circular holes with a diameter of several μm were formed on the silica glass surface at the centers of the apertures due to the Fresnel diffraction effect. The minimum diameter of the holes was 3.4 μm. The characteristics of the micromachining are discussed based on the electric field distributions of the CO₂ laser light under the mask using a three-dimensional full-wave electromagnetic field simulation.     

High-density bump formation on a glass surface using femtosecond laser processing in water

Micrometer-sized bumps were formed on a glass surface using a focused femtosecond laser processing in water. The bumps were formed over a wide ranges of pulse irradiation parameters, including irradiation energy and focus position. The bumps exhibited a wide variety of morphologies and sizes depending on the parameters. The use of a liquid, namely heavy water, which returns after breakdown and cavitation bubble formation, enabled us to fabricate bumps with high spatial density, which is not possible using a solid coating that is ablated. A desired arrangement of bumps on a glass surface was fabricated by tuning the processing time interval to be more than the disappearance time of a bubble, generated by focusing a femtosecond laser pulse near the water/glass interface. PACS 42.62.Cf; 42.70.Ce; 52.38.Mf; 78.47.+p; 79.20.Ds     

Anti-reflective effect of transparent polymer by plasma treatment with end-hall ion source and optical coating

The surface of poly(methyl methacrylate) (PMMA) was treated by plasma with an end-Hall ion source in vacuum in order to enhance its anti-reflectivity. The cone-shaped bumps induced by the plasma etching have shown an antireflective effect. Moreover, PMMA has poor thermal durability due to its low melting point; therefore, the etched PMMA was further coated by a 5 nm thick SiO₂ film after 900 and 1300 s plasma etching. Samples after SiO₂ coating were thermally annealed at temperature of 70°C for 1 h. Experiments show that transmittance was increased after 5 nm thick SiO₂ coating. The of transmittance of PMMA after both sides treated by 900 s plasma etching and 5 nm SiO₂ coating was not changed after thermal annealing. However, without SiO₂ coating the transmission was reduced 1% after annealing. Atomic force microscope (AFM) demonstrated that the nano-structures of cone-shaped bumps were formed on the PMMA after plasma etching and a smoother nano-structured pattern preserved the transmittance of the PMMA after both sides treated by 900 s plasma etching and 5 nm SiO₂ coating. Three dimensional photonic crystal formed by uniformly distributed cone-shaped bumps was assumed to result in the reduction of the anti-reflectivity of treated PMMA.     

Self-organization in a chromium thin film under laser irradiation

Self-organization of chromium on glass was observed during laser ablation of the metal film with partially overlapping laser pulses. The beam of a nanosecond pulse laser tightly focused to a line was applied to the back-side ablation of the chromium thin film on a glass substrate. While the line ablated with a single laser pulse had sharp edges on both sides with ridges of the melted metal, the use of partially overlapping pulses formed a complicated structure made of the metal remaining from the ridges. Regular structures of ripples were developed in a certain range of laser fluence and pulse overlap. The ripple period could be controlled from 2.5 to 4 μm by variation of the processing parameters. Various experimental techniques were applied to test the structures, and different models of the ripple formation in the thin metal film were considered. The initial quasi-periodical formation started because of dewetting of thin liquid metal films on the glass substrate after its melting. Similar to the evaporation of liquid films, the small perturbation in the ridge thickness was able to induce instability in evaporation of the thin melted metal film. Freezing of the nonequilibrium state between laser pulses was one of the stabilizing factors in self-organization of the metal.     

Ablation of transparent solids during self-limited deposition of diamond-like films from liquid hydrocarbons

A novel effect is studied of self-limitation of the diamond-like film thickness during laser irradiation of the interface of transparent substrates with liquid aromatic hydrocarbons. The interface is exposed through the transparent substrate to radiation of a copper vapor laser (wavelength of 510.6 nm, pulse duration of 20 ns). The thickness of diamond-like film increases linearly to 80-100 nm with the number of laser pulses and then saturates, while the substrate is ablated with nearly constant rate. This ablation rate depends on the thermal expansion coefficient of the substrate (glass, fused silica, sapphire, or CaF₂). The absorption of extinction coefficient of deposited films measured by ellipsometry is of order of 10⁴ cm^-1 and is sufficient to cause the significant heating of the interface. The ablation of the transparent substrates is due to their unequal thermal expansion compared to the diamond-like film having different thermal expansion coefficient. The measured ablation rates scale from 0.2 Å/pulse for glass to 4.5 Å/pulse for CaF₂. A 7m spatial resolution of the ablation process has been demonstrated for fused silica.     

Laser-induced swelling of transparent glasses

We describe the process of forming bumps on the surface of transparent glasses such as display glasses with moderate thermal expansion ∼3.2 × 10⁻⁶ K⁻¹ and high coefficient of thermal expansion (CTE) glasses, e.g. soda-lime glasses with CTE ∼9 × 10⁻⁶ K⁻¹ using high-power ultra-violet (UV) lasers at a wavelength where glass is transparent. We characterize the effect with optical dynamic measurements. The process relies on increased glass absorption from color-center generation and leads to glass swelling with bumps formation. The bump height may constitute more than 10% of the thickness of the glass sample. The required exposure time is relatively short ∼1 s, and depends on the glass properties, laser power, its repetition rate, and focusing conditions. A brief review of the potential applications for these bumps is provided.     

High-speed machining of glass materials by laser-induced plasma-assisted ablation using a 532-nm laser

+ :YAG laser (532 nm). The plasma generated from a silver (Ag) target by the laser irradiation effectively assists in ablation of the fused quartz substrate by the same laser beam, although the laser beam is transparent to the substrate. A grating with a cross-sectional shape like a square-wave (period ≈ 20 μm) is achieved using the mask projection technique. The ablation rate reaches several tens nm/pulse. In addition, LIPAA is applied to high-speed hole drilling (700 μm in diameter) of fused-quartz (0.5 mm thick) and Pyrex glass (0.5 mm thick). Received: 25 May 1998/Accepted: 19 June 1998     

Micro-lens arrays generated by UV laser irradiation of doped PMMA

Micro-lenses with well-defined optical parameters are generated on polymethylmethacrylate (PMMA) substrates doped with diphenyltriazene (DPT) by controlled use of a swelling effect generated under conditions of subablative excimer laser illumination. The surface profiles depend on the laser spot size and energy density. A sensitively balanced combination of matrix softening, substrate volume expansion due to photochemical nitrogen release, and surface tension is responsible for the final shape of the lenses. Complete arrays of identical lenses with 15 μm diameters and a focal length of 30 μm are produced by irradiation of (0.25 wt. %) DPT-PMMA with a single laser pulse at a wavelength of 308 nm and a fluence of 3 J/cm². It is shown experimentally and theoretically that appropriate volume expansion is possible without introducing internal light scattering due to the formation of small bubbles. Received: 7 April 1999 / Accepted: 8 April 1999 / Published online: 5 May 1999     

Infrared transmissivity of heavily doped contact layers on extrinsic silicon IR-detectors

The infrared transmissivity of heavily dopedp-type contact layers on silicon was studied in the 3–5 μm and 8–14 μm wavelength range in order to optimise the layer thickness and doping concentration for antireflection coating. The transmissivity of surface layers and buried layers was computed taking into account the free carrier optical dispersion by the Drude theory and corrections due to intervalence band transitions as well as multiple reflections and interferences in the layer. The computations are in quantitative agreement with measurements on contact layers formed by multiple boron implantation. It was found that the free carrier absorption loss completely cancels the gain due to the antireflection effect for a surface layer. Transmissivities of around 73% may be obtained by a buried heavily doped layer.     

Crystal structure and mechanical strain in polycrystalline ferrite films on polycrystalline sapphire substrates

We have grown films of magnesium, lithium, zinc, and nickel-zinc ferrites, varying in thickness from 0.5 to 8 μm on polycrystalline sapphiresubstrates by coating the surface of the substrate with an aqueous nitric acid solution of salts of the elements which compose the ferrite. The lattice parameter of the ferrite film increases with the film thickness and becomes constant at thicknesses greater than 8 μm. We have determined the ratio of the theoretical strength limit to the macroscopic one in the film based on the change in the interplanar distanced ₂₂₀ and the lattice parameter calculated from it, under the assumption that the changeΔa(h)=a _∞=a(h) results from macroscopic stresses in the film. This ratio shows that whenh=1 μm the microstresses in the film are an order of magnitude smaller than the theoretical strength limit. At larger film thicknesses this macroscopic stress becomes even lower, and at the external surface of thick films it goes completely to zero. Pedagogical Institute, Viteb. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 30–33, October, 1996.     

A cobalt-doped transparent glass ceramic saturable absorber Q-switch for a LD pumped Yb<Superscript>3+</Superscript>/Er<Superscript>3+</Superscript> glass microchip laser

We fabricate a transparent glass ceramic contains magnesium-aluminum spinel nanocrystallites doped with Co²⁺ ions. The ground-state and excited-state absorption cross section of this glass ceramic at 1.54 μm are estimated to be (2.8 ± 0.3) × 10⁻¹⁹ cm² and (4.8 ± 0.5) × 10⁻²⁰ cm², respectively. For the first time, the passively Q-swithched operation of LD pumped 1.54 μm microchip Yb³⁺/Er³⁺ glass laser is realized with transparent glass ceramic as saturable absorber. The Q-switched pulses of 3.846 kHz in repetition rate, 6.2 ns in duration and 6.3 μJ in energy are obtained. At last, the dependences of pulse width and repetition rate on pump power are also investigated.     

Pulsed electron-beam melting of a copper — steel 316 system: Evolution of the chemical composition,microstructure, and properties

The surface topography, chemical composition, microstructure, nanohardness, and tribological characteristics of a Cu (film, 512 nm)-stainless steel 316 (substrate) system subjected to pulsed melting by a low-energy (20–30 keV), high-current electron beam (2–3 μs, 2–10 J/cm²) were investigated. The film was deposited by sputtering a Cu target in the plasma of a microwave discharge in argon. To prevent local exfoliation of the film due to cratering, the substrate was multiply pre-irradiated with 8–10 J/cm². On single irradiation, the bulk of the film survived, and a diffusion layer containing the film and substrate components was formed at the interface. The thickness of this layer was 120–170 nm irrespective of the energy density. The diffusion layer consisted of subgrains of γ-Fe solid solution and nanosized particles of copper. In the surface layer of thickness 0.5–1 μm, which included the copper film quenched from melt and the diffusion layer, the nanohardness and the wear resistance nonmonotonicly varied with energy density, reaching, respectively, a maximum and a minimum in the range 4.3–6.3 J/cm². As the number of pulsed melting cycles was increased to five in the same energy density range, there occurred mixing of the film-substrate system and a surface layer of thickness ∼2 μm was formed which contained ∼20 at. % copper. Displacement of the excess copper during crystallization resulted in the formation of two-phase nanocrystal interlayers separating the γ-phase grains. __________ Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 12, pp. 6–13, December, 2005.     

Measurement of water film thickness by laser-induced fluorescence and Raman imaging

We present two non-intrusive, laser-based imaging techniques for the quantitative measurement of water fluid film thickness. The diagnostics methods are based on laser-induced fluorescence (LIF) of the organic tracer ethyl acetoacetate added to the liquid in sub-percent (by mass) concentration levels, and on spontaneous Raman scattering of liquid water, respectively, both with excitation at 266 nm. Signal intensities were calibrated with measurements on liquid layers of known thickness in a range between 0 and 500 μm. Detection via an image doubler and appropriate filtering in both light paths enabled the simultaneous detection of two-dimensional liquid film thickness information from both methods. The thickness of water films on transparent quartz glass plates was determined with an accuracy of 9% for the tracer LIF and 15% for the Raman scattering technique, respectively. The combined LIF/Raman measurements also revealed a preferential evaporation of the current tracer during the time-resolved recording of film evaporation.     

Method for reducing debris and thermal destruction in femtosecond laser processing by applying transparent coating

A cavity processed by a tightly focused femtosecond laser pulse is surrounded by a ring-shaped protrusion, debris, and small droplets. In order to reduce these undesired damages, we propose processing with a coating of transparent material on a target material. PMMA (poly-methyl methacrylate) with the thickness that its surface is not ablated by a single pulse irradiation reduces dissolution and vaporization caused by the interaction between a high-density hot vapor plume and the target material. Furthermore, the material at the target surface does not escape freely due to the coating layer. As a result, a submicrometer-sized cavity is produced with a reduction of debris and a smaller thermal-destruction area. PACS 44.10.+i; 61.80.Ba; 79.20.Ds     

Crackless linear through-wafer etching of Pyrex glass using <Emphasis Type="Italic">liquid-assisted</Emphasis> CO<Subscript>2</Subscript> laser processing

Pyrex glass etching is an important technology for the microfluid application to lab-on-a-chip devices, but suffers from very low etching rate and mask-requiring process in conventional HF/BOE wet or plasma dry etching as well as thermal induced crack surface by CO₂ laser processing. In this paper, we applied the liquid-assisted laser processing (LALP) method for linear through-wafer deep etching of Pyrex glass without mask materials to obtain a crackless surface at very fast etching rates up to 25 μm/s for a 20 mm long trench. The effect of laser scanning rate and water depth on the etching of the 500 μm thick Pyrex glass immersed in liquid water was investigated. The smooth surface without cracks can be achieved together with the much reduced height of bulge via an appropriate parameter control. A mechanism of thermal stress reduction in water and shear-force-enhanced debris removal is discussed. The quality improvement of glass etching using LALP is due to the cooling effect of the water to reduce the temperature gradient for a crackless surface and natural convection during etching to carry away the debris for diminishing bulge formation. An erratum to this article can be found at     

Effect of the transverse size of a laser-induced plasma torch on material processing

Projection microprocessing of materials by Nd: KGW laser shots (1.06 μm) is considered. Specifically, a practically feasible method of processing transparent materials (sapphire, fused quartz, and glass) by means of a laser-induced plasma is suggested. These materials are marked, in particular, by applying a controllable liquid-crystal mask on them. Also, a relief diffraction grating of period 3 μm is patterned on their surface. The effect of the transverse size of the area illuminated on the processing parameters is studied. It is established that the density and temperature of the laser-induced plasma grow with increasing transverse size of the torch, with the energy density of the laser radiation being the same. The plasma torch reverses the pressure and wavelength dependences of the rate of ablation of transparent materials as compared to those of metals.     

On the optical properties of SnO2 thin films prepared by sol-gel method

Tin oxide (SnO₂) thin films are prepared by spin coating onto well-cleaned glass substrates using stannous chloride and methanol solution as complexing agent. Films of different thicknesses are annealed at 400° C. Optical properties are studied using UV-Visible spectrophotometer. The films are highly transparent in the visible region. It is found that transmission increases in coated glass (∼92%) than uncoated glass. This may find applications in antireflection coating. Energy band gaps obtained are in the range of 4.10–4.12 eV. Refractive index variation with thickness is also studied and is between 1.77–1.91. The thicknesses of the film are of the order 2300, 3500 and 4800 ?. These results have been discussed in the light of literature.     

Facile liquid phase deposition of thick reflective GeO2 film for hollow waveguide delivery of CO2 laser radiation

A new idea of using LPD (liquid phase deposition) to prepare a GeO₂ thick reflective film for hollow waveguide delivery of CO₂ laser radiation was investigated in this work. The LPD process was achieved by designedly adding acid to GeO₂–aqueous ammonia. The addition of acid could induce the transformation of germanate ions into GeO₂ solutes, leading to the deposition of a GeO₂ ceramic film when the concentration of GeO₂ solute is higher than its saturation solubility. It was found that the highest film growth rate occurred at a pH value of 3, while a film with low surface roughness and good adhesion to the substrate was produced at a pH value of 2 and the film could be converted to a smooth, compact hexagonal GeO₂ film by heat treatment at 1120 °C for 30 min. Two abnormal dispersion bands within 7.6–9 μm and 9.6–11.2 μm were mainly caused by the silica glass substrate and the GeO₂ film, respectively. The film was thick enough to achieve the total reflectance of the CO₂ laser radiation. The use of this GeO₂ film in a hollow waveguide structure for CO₂ laser radiation delivery is discussed based on the transmission loss and the feasibility of the deposition of the GeO₂ film inside silica capillary tubes. The results show that the hollow waveguides with low transmission loss are most likely fabricated at a low cost using the LPD-derived GeO₂ reflective film. PACS 78.20.-e; 78.66.-w; 42.70.-a; 78.20.Ci; 78.40.-q     

Optimization of microcrystalline silicon thin film solar cell isolation processing parameters using ultraviolet laser

This study used ultraviolet laser to perform the microcrystalline silicon thin film solar cell isolation scribing process, and applied the Taguchi method and an L₁₈ orthogonal array to plan the experiment. The isolation scribing materials included ZnO:Al, AZO transparent conductive film with a thickness of 200 nm, microcrystalline silicon thin film at 38% crystallinity and of thickness of 500 nm, and the aluminum back contact layer with a thickness of 300 nm. The main objective was to ensure the success of isolation scribing. After laser scribing isolation, using the minimum scribing line width, the flattest trough bottom, and the minimum processing edge surface bumps as the quality characteristics, this study performed main effect analysis and applied the ANOVA (analysis of variance) theory of the Taguchi method to identify the single quality optimal parameter. It then employed the hierarchical structure of the AHP (analytic hierarchy process) theory to establish the positive contrast matrix. After consistency verification, global weight calculation, and priority sequencing, the optimal multi-attribute parameters were obtained. Finally, the experimental results were verified by a Taguchi confirmation experiment and confidence interval calculation. The minimum scribing line width of AZO (200 nm) was 45.6 μm, the minimum scribing line width of the microcrystalline silicon (at 38% crystallinity) was 50.63 μm and the minimum line width of the aluminum thin film (300 nm) was 30.96 μm. The confirmation experiment results were within the 95% confidence interval, verifying that using ultraviolet laser in the isolation scribing process for microcrystalline silicon thin film solar cell has high reproducibility.