枝状ZnO-TiO2复合纳米棒阵列的制备及表征

采用化学水浴沉积法,在预制晶种层的基底上得到垂直底面生长的有序ZnO纳米棒阵列,再用反应磁控溅射方法,沉积制备ZnO-TiO2复合结构的纳米棒阵列.利用X射线衍射(XRD)和扫描电子显微镜(SEM)对制备得到的样品进行结构和形貌表征,研究了晶种层、水浴生长液浓度和磁控溅射氧氩比对复合纳米阵列的影响.制备得到了具有TiO2分枝的复合纳米棒阵列,并初步探讨了TiO2分枝的形成机理,为制备基于复合纳米棒阵列的器件提供了条件.     

基于直流磁控溅射晶种层的ZnO纳米阵列的制备及性能研究

采用直流反应磁控溅射法制备品种层薄膜,研究O2/Ar气体分压比和退火温度对品种层结构和微观形貌的影响.通过化学水浴沉积,在预制有晶种层的薄膜上制备ZnO纳米阵列结构,研究不同前驱体浓度和预制晶种层对纳米阵列生长的影响.结果表明,当O2/Ar中O2分压减少,薄膜均匀性较差,当Ar分压增加薄膜由于扩散而趋于平整.退火温度增加,晶粒尺寸增大,内应力降低.磁控溅射法预制的晶种层上生长的纳米棒垂直于衬底生长,(002)晶面的衍射峰强最高,说明纳米棒沿c轴择优取向.生长液的浓度对纳米棒的形貌影响显著,随着生长液浓度的升高,ZnO纳米阵列直径增大,顶端趋于平整的六棱柱结构.     

PLD制备的籽晶层对ZnO纳米棒形貌及性能的影响

本文研究了脉冲激光沉积法(PLD)制备的不同籽晶层对水热生长ZnO纳米棒的形貌及发光性能的影响,通过比较得出,籽晶层是获得高度取向,排列有序的ZnO纳米棒的基础.电子回旋共振(ECR)氧等离子体参与沉积,有利于获得表面均匀且光滑平整的籽晶层,进而得到形貌及结晶质量较好的ZnO纳米棒.籽晶层的厚度不仅能够改变纳米棒的疏密程度,而且还能够改善纳米棒的取向性.通过调节籽晶层的退火温度可以调节纳米棒直径的大小,恰当的籽晶层退火温度也是获得形貌优良的ZnO纳米棒的一个关键因素.     

ZnO/PbS量子点异质结太阳能电池结构调控研究

利用氧化锌溶胶-凝胶(Sol-Gel)、锌盐乙醇溶液(ES)和氧化锌纳米粒子溶液(NP)三种不同的籽晶层前驱液,在ITO衬底上通过化学浴沉积方法(CBD)制备出了一维氧化锌纳米棒阵列薄膜,并在所制备的氧化锌纳米棒阵列薄膜上构筑了具有“三维”异质结结构的PbS量子点太阳能电池.通过扫描电镜(SEM)、X射线衍射(XRD)和透射光谱分析等研究了籽晶层对氧化锌纳米棒阵列薄膜形貌、结构和光学性质的影响;结合电池性能测试结果,比较分析了“三维”异质结结构和“平面”异质结结构对电池性能的影响.结果表明:在ES籽晶层上生长的氧化锌纳米棒阵列薄膜的取向性最好,Sol-Gel次之,NP最差;在ES和Sol-Gel籽晶层上生长2h的样品透射率在80;左右;与“平面”异质结结构PbS量子点电池相比,基于氧化锌纳米棒阵列薄膜制备的“三维”异质结结构电池的短路电流可提高40;,表明“三维”异质结结构有利于载流子的分离和输运.     

化学溶液沉积法制备超疏水氧化锌薄膜

采用化学溶液沉积法在涂覆ZnO缓冲层的玻璃衬底上制备超疏水ZnO薄膜。利用SEM、XRD和水接触角测量表征薄膜的微观结构和润湿性。结果表明:在涂覆ZnO的玻璃衬底上所沉积的ZnO膜为单分散的ZnO纳米棒阵列膜。ZnO纳米棒的形状和尺寸与氢氧化钠浓度、化学反应速度和沉积时间有关。氢氧化钠浓度较高时所获得的是细长浓密的纳米棒阵列膜,提高反应速度会降低ZnO纳米棒的均匀性和形状规则性。经硅烷偶联剂处理后所得薄膜与水的接触角达到165°。     

柔性有序ZnO纳米棒/TiO2纳米粒子复合薄膜的制备及其光电转换性能研究

采用电沉积法,在柔性不锈钢网基底上制备了ZnO纳米棒阵列,随后旋涂P25浆料,最终经退火后得到了ZnO纳米棒阵列/TiO2纳米粒子的复合结构薄膜,详细探讨了TiO2纳米粒子的填充,初级ZnO纳米棒阵列的形貌,P25浆料的旋涂次数以及表面活性剂PEG添加量等制备条件对复合结构光阳极形貌及光电性能的影响.研究表明:TiO2纳米粒子的引入能有效提高光阳极的比表面积,增强半导体与染料的耦合能力,ZnO纳米棒阵列能够为电子提供快速传输的通道.最佳制备条件为:初级ZnO纳米棒沉积次数为两次,浆料浓度为1 g/50 mL,旋涂浆料次数为三次,PEG添加量为4g/100 mL,制备的复合结构DSSC的光电转换效率较单一纳米棒阵列有一定的提高.     

基于CVD自组装生长氧化锌半导体纳米结构的光电导紫外探测器研究

报道了一种基于自组装生长ZnO纳米结构的光电导型紫外探测器.首先,在石英衬底上制备银叉指电极,然后溅射ZnO纳米薄膜形成一种共面光电导型金属-半导体-金属(MSM)结构,再利用低压CVD生长方法进行ZnO纳米线的原位生长,从而在器件顶部形成了ZnO纳米线垂直阵列和其上交错排列ZnO纳米线所构成的双层ZnO纳米线结构.这种器件底部的ZnO薄膜既是MSM光电导器件的电荷传输层,也同时作为上层ZnO纳米结构自组装生长的籽晶层,顶部的ZnO纳米结构层作为紫外光敏感层,测试结果表明该器件具有光响应速度快、光响应电流大和良好的紫外响应可分辨特性.研究表明,相比于单根ZnO纳米线光电导紫外器件而言,基于ZnO纳米结构膜层的光电导紫外探测器能够大幅度提高可测光响应电流.     

GaN衬底掺杂模式对ZnO纳米棒光学性质的影响

本文通过水热法在u-GaN(undoped GaN)/Al2 O3和p-GaN/Al2O3衬底上制备了ZnO纳米棒阵列.利用X射线衍射仪(XRD)、高分辨X射线衍射仪(HRXRD)、场发射扫描电子显微镜(FESEM)、原子力显微镜(AFM)和光致发光谱(PL)对样品进行表征,研究在无种子层和金属催化剂情况下u-GaN/Al2 O3和p-GaN/Al2O3衬底对ZnO纳米棒生长的影响.结果表明,在u-GaN和p-GaN上生长的ZnO纳米棒均为六方纤锌矿结构.在p-GaN上生长的ZnO纳米棒直径较细且密度更大,这可能是由于p-GaN界面比较粗糙,界面能量较大,为ZnO的生长提供了更多的形核区域;与生长在u-GaN上的ZnO纳米棒阵列相比,p-GaN上所沉积的ZnO纳米棒在378.3 nm处有一个较强的近带边发射峰,且峰强比较大,说明在p-GaN上所制备的ZnO纳米棒的晶体质量和光学性能更好.     

ZnO纳米针阵列合成及台阶动力学生长机理研究

采用化学气相沉积系统,不用催化剂,生长过程中采用变温技术,在Si基片上合成了ZnO纳米针阵列.扫描电子显微图(SEM)显示ZnO纳米针阵列整齐密集生长在基片上,其棒状部分粗细均匀,直径约100 nm.透射电子显微照片(TEM)显示ZnO纳米针尖端呈现一系列的台阶.X射线衍射(XRD)图谱上只存在ZnO的(002)衍射峰,说明ZnO纳米针沿c轴择优取向.运用台阶动力学和奇异面生长理论分析表明ZnO纳米棒是典型的奇异面上单二维成核法向层生长机制.当单圈圆台阶扫过整个晶面的时间ts大于奇异面法向生长一个台阶高度所用时间tn时,在纳米棒顶端形成针尖;当单圈圆台阶扫过整个晶面的时间ts小于或等于奇异面法向生长一个台阶高度所用时间tn时,在纳米棒顶端不能形成针尖.     

电沉积法制备ZnO纳米棒阵列及其发光特性

本文以掺F的SnO2导电玻璃为基板,以硝酸锌水溶液为电解液,采用三电极恒电位体系电沉积制备ZnO纳米棒阵列,系统考察了硝酸锌浓度和沉积电位等工艺参数对ZnO纳米棒阵列的微观形貌及其发光性能的影响规律.结果表明,硝酸锌浓度和沉积电位对纳米棒阵列的形貌有显著影响,控制适宜的工艺条件可以制备出直径分布均匀、结晶性好且纯度高的六方纤锌矿ZnO纳米棒阵列.荧光光谱分析表明,电沉积制备出的ZnO纳米棒阵列在385 nm附近有一个强荧光发射峰,且发光性能稳定、对纳米棒阵列微观形貌的细微变化不敏感,使其在发光二极管和激光器等领域具有广阔的应用前景.     

Effect of growth temperature on the structure and optical properties of ZnO nanorod arrays grown on ITO substrate

ZnO nanorod arrays have been successfully prepared on ITO substrate by a chemical‐bath deposition method at different growth temperatures. The influence of the growth temperature on the morphology and microstructure of the ZnO nanorods was investigated by scanning electron microscopy (SEM) and X‐ray diffraction (XRD). The results showed that the diameter of the ZnO nanorods decreased and the size of the nanocrystals increased with increasing growth temperature. Optical absorption measurements showed the absorption band edge has shifted to a lower‐energy region due to the quantum size effect. Green emission and UV emission bands were observed and they are found to be temperature dependent, which indicates that the deep‐level emission and band‐edge emission of ZnO nanorods is closely related to the rod diameter, and the related mechanism is discussed.     

Improving the property of ZnO nanorods using hydrogen peroxide solution

Zinc oxide (ZnO) nanorod arrays made by the hydrothermal method were treated with hydrogen peroxide (H₂O₂) solution through two different approaches. One is to immerse ZnO nanorod sample into H₂O₂ solution. The other is a pre-treatment of spin-coating H₂O₂ solution on the seed layer before the growth of the ZnO nanorods. In the first approach, we found that the ultraviolet (UV) emission peak of the ZnO nanorod photoluminescence (PL) spectra was strongly dependent on the immersion time. In the second approach, the H₂O₂ solution influences not only the quality of the seed layer, but also the amount of the oxygen interstitial defects in the ZnO nanorods grown thereon. As a result, the UV emission intensity from the ZnO nanorods is enhanced almost five times. The ZnO nanorod arrays with few oxygen interstitial defects are prepared by the hydrogen peroxide treatment and expected to enable the fabrication of optoelectronic device with excellent performance.     

Characterization of annealed zinc oxide nanotip array prepared by chemical bath deposition

We investigate the characteristics of thermally annealed ZnO nanotip in various ambient. AZO seed layer was first prepared on glass substrate by RF sputtering. A vertically oriented ZnO nanotip array was grown on AZO seed layer/glass by chemical bath deposition with precursors of zinc nitrate and ammonia at 70 °C. By thermal annealing in N₂O ambient at 300 °C for 1 hour, the characteristics of ZnO nanotip array were improved and the ultraviolet sensor shows the best rise time of 50 s, decay time of 70 s and on/off current ratio of 26.04.     

Synthesis of ZnO films in different solvents and their photocatalytic activities

ZnO thin films have been successfully synthesized via the chemical bath deposition (CBD) method without using any catalysts or templates. The effects of solvents (such as water, ethanol and n‐propanol) on structure and morphology of ZnO thin films have been studied. XRD analysis showed that all ZnO thin films with wurtzite crystal structure were obtained via various solvents. SEM images showed that ZnO thin films prepared in different solvents have different sizes and morphologies. TEM images showed that crystalline ZnO samples prepared in different solvents have different growth habits. Photoluminescence and photocatalysis properties have been investigated at room temperature. ZnO thin films prepared in water showed superior photocatalytic activity in the degradation of rhodamine B (RhB) compared to other samples.     

The effect of ZnO buffer layer on structural and optical properties of ZnO nanorods

A low‐temperature synthetic route was used to prepare oriented arrays of ZnO nanorods on ITO conducting glass substrate coated with buffer layer of ZnO seeds in an aqueous solution. The corresponding growth behavior and optical properties of ZnO nanorod arrays were studied. It was found that the nature of the buffer layer had effect on the microstructures and optical properties of the resultant ZnO nanorod arrays. X‐ray diffraction (XRD) results showed the nanorods were preferentially grown along (002) direction, but the diameter of the nanorods prepared with the buffer layer was much smaller than the without one, which can be clearly seen from the scanning electron microscopy (SEM) results. And it also found that the buffer layer was not only enhanced the density of overall coverage but also beneficial to grown the oriented arrays. Photoluminescence spectroscopy (PL) results indicated that the all the samples had the better optical behaviors. By computation, the relative PL intensity ratio of ultraviolet emission (I_UV) to deep level emission (I_DLE) of ZnO nanorods grown with the pure substrate was much higher than that of the sample with the buffer layer. The defects on the surface increased with the size reduction of nanorods caused by the buffer layer may be the main reason for it. And the small shift in the UV emission was caused by the rapid reduction in crystal size and compressive stress from Raman spectra results. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

载气流量对氧化锌纳米棒阵列的影响

本文研究了在金属有机化学气相沉积法(MOCVD)生长过程中,锌(Zn)源和氧(O)源载气流量的改变对ZnO纳米棒阵列的影响.通过改变源材料载气的流量,得到了直径从150 nm到20 nm范围、均一性明显改善的ZnO纳米棒.采用扫描电子显微镜(SEM),X射线衍射图谱(XRD),拉曼光谱(Raman)和光致荧光光谱(PL)等测试手段对样品的形貌结构和光学特性进行了表征.SEM和XRD结果表明当Zn源和O源的载气流量均为1 SLM时,所得的纳米棒直径最均匀,排列整齐,垂直于衬底生长,且结晶度最好.PL谱显示纳米棒的紫外带边峰发生了蓝移,可能与表面效应的增加有关.     

Template-guided growth of well-aligned ZnO nanocone arrays on FTO substrate

Well-aligned ZnO nanocone arrays (NCAs) were prepared on fluorine doped tin oxide (FTO) substrates using highly ordered ZnO nanorod arrays (NRAs) as templates to guide the growth via a hydrothermal method. In contrast, only disordered ZnO nanocones on FTO were obtained in the absence of the highly ordered ZnO nanorod templates. The well-aligned ZnO nanocone arrays were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), UV–visible absorption, and photoluminescence (PL) spectroscopies. It was found that the highly ordered ZnO NRAs pre-formed on FTO played a critical role in dictating the further growth of the well-aligned ZnO NCAs from them. Significantly, strong light-trapping effect was revealed for the well-aligned ZnO NCAs, which may find important applications in, e.g., photovoltaics.     

Solvothermal growth of highly oriented wurtzite‐structured ZnO nanotube arrays on zinc foil

ZnO nanotube arrays were synthesized on zinc foil by a simple solvothermal approach. In this approach, zinc foil was used not only as a substrate but also as a zinc‐ion source for the direct growth of ZnO nanotube arrays. X‐ray diffraction (XRD) analysis and Scanning electron microscope (SEM) images, indicated that the structure of the ZnO nanotube arrays on the zinc foil substrate was single‐crystalline with a wurtzite structure. The optical properties of the ZnO nanorod arrays were characterized by photoluminescence spectroscopies and Raman. Photoluminescence exhibited strong UV emission and a broad deep‐level (visible) emission emission at with 325 nm excitation. A possible mechanism is also proposed to account for the growth of the ZnO nanotube arrays. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)