Ferromagnetism in Ga(1-x)Mn(x)P: evidence for inter-Mn exchange mediated by localized holes within a detached impurity band

We report an energy gap for hole photoexcitation in ferromagnetic Ga(1-x)Mn(x)P that is tunable by Mn concentration (x < or = 0.06) and by compensation with Te donors. For x approximately 0.06, electrical transport is dominated by excitation across this gap above the Curie temperature (TC) of 60 K and by thermally activated hopping below TC. Magnetization measurements reveal a moment of 3.9 +/- 0.4 muB per substitutional Mn while the large anomalous Hall signal demonstrates that the ferromagnetism is carrier mediated. In aggregate these data indicate that ferromagnetic exchange is mediated by holes localized in a Mn-derived band that is detached from the valence band.     

First-principles prediction of half-metallic ferromagnetism in Cd(TM)O2 (TM=Cr, Mn, Fe, Co, Ni) compounds

We report the electronic structure of Cd(TM)O₂ (TM=Cr, Mn, Fe, Co, Ni) in the chalcopyrite structures. From this study we find that Cd(TM)O₂ is a half-metallic ferromagnetic compound. From the energy consideration we find that Cd(TM)O₂ is more stable in chalcopyrite structure rather than in rock salt structure. A careful analysis of the spin density reveals the ferromagnetic coupling between the p-d states and the cation dangling-bond p states, which is believed to be responsible for the stabilization of the ferromagnetic phase. The calculated heat of formation, bulk modulus and cohesive energy are reported.     

硫化锌纳米管稳定性、电子性质和磁性质的比较研究

用第一性原理方法系统地研究硫化锌纳米管的稳定性、电子性质和掺杂磁性质.比较三种纳米管的稳定性.研究表明,六边形截面的双壁管的稳定性最高,相同截面的单壁管稳定性次之,而圆截面的之字形和扶手椅纳米管稳定性最低.电子能带结构计算表明它们都是直接带隙半导体.纳米管表面氢吸附后,六边形截面的单壁管转变为间接带隙半导体.研究了磁性原子掺杂六边形截面管的磁性质.发现掺杂纳米管的形成能比纯纳米管的形成能低,说明掺杂过程是一个放热反应.纳米管的总磁矩等于掺杂的磁性原子的磁矩.这些单掺杂纳米管在可调磁的新材料方面有潜在的应用价值.     

First-principles calculation of the structural,electronic,and magnetic properties of cubic perovskite RbXF_3(X = Mn,V,Co,Fe)

First-principles calculations by means of the full-potential linearized augmented plane wave method using the generalized gradient approximation with correlation effect correction(GGA+U) within the framework of spin polarized density functional theory(DFT+U) are used to study the structural,electronic,and magnetic properties of cubic perovskite compounds RbXF_3(X = Mn,V,Co,and Fe).It is found that the calculated structural parameters,i.e.,lattice constant,bulk modulus,and its pressure derivative are in good agreement with the previous results.Our results reveal that the strong spin polarization of the 3d states of the X atoms is the origin of ferromagnetism in RbXF_3.Cohesive energies and the magnetic moments of RbXF_3 have also been calculated.The calculated electronic properties show the half-metallic nature of RbCoF_3 and RbFeF_3,making these materials suitable for spintronic applications.     

Evidence of cobalt-vacancy complexes in Zn(1-x)Co(x)O dilute magnetic semiconductors

We investigate the local structure of ferromagnetic Zn(1-x)Co(x)O epilayers by coupling polarization-dependent x-ray absorption spectroscopy and ab initio calculations of selected defect structures. We give clear evidence of the presence of oxygen vacancies, located close to the Co atoms in a specific complex configuration. We also establish the upper concentration limit of metallic parasitic nanophases and their contribution to magnetism. Our results lead to the conclusion that oxygen vacancies play an important role in originating the high temperature ferromagnetism of Zn(1-x)Co(x)O.     

Infrared probe of itinerant ferromagnetism in Ga(1-x)Mn(x)As

The doping and temperature dependence of the complex conductivity is determined for the ferromagnetic semiconductor Ga(1-x)Mn(x)As. A broad resonance develops with Mn doping at an energy scale of approximately 200 meV, well within the GaAs band gap. Possible origins of this feature are explored in the context of a Mn induced impurity band and intervalence band transitions. From a sum rule analysis of the conductivity data the effective mass of the itinerant charge carriers is found to be at least a factor of 3 greater than what is expected for hole doped GaAs. In the ferromagnetic state a significant decrease in the effective mass is observed, demonstrating the role played by the heavy carriers in inducing ferromagnetism in this system.     

First-Principles GGA+U Study of Intermediate-Band Characters from Zn_(1-x)M_xO(M=3d Transition-Metal) Alloys Suitable for High Efficiency Solar Cell

The electronic structure characters are calculated for the Zn_(1-x)M_xO alloys with some Zn atoms in ZnO substituted by 3d transition-metal atoms(M),in order to find out which of these alloys could provide an intermediate band material used for fabricating high efficiency soiar cell.Especially,among of these alloys,the electronic structure character and optical performance of Zn_(1-x)Cr_xO alloys clearly show an intermediate band Med partially and isolated from the VB and the CB in energy band structure of ZnO host,and the intermediate band characters can be preserved with increasing Cr concentrations no more than 8.33%in Zn_(1-x)Cr_xO alloys,at the same time,the ratio 0.52 of E_g~(FC) to E_g~(VE) in Zn_(1-x)Cr_xO,(x = 4.16%) alloy is closest to the optimal ratio of 0.57.Besides,compared to the ZnO,the optical absorption does indicate a great improved absorption below the calculated band gap of the ZnO and an enhancement of the optical absorption in the whole solar spectral energy range.     

Electronic Structure and Visible-Light Absorption of Transition Metals(TM=Cr,Mn, Fe,Co) and Zn-Codoped SrTiO_3: a First-Principles Study

First-principles calculations are performed on the influence of transition metal(TM=Cr, Mn, Fe, Co) as codopants on the electronic structure and visible-light absorption of Zn-doped Sr TiO_3. The calculated results show that(Zn,Mn)-codoped Sr TiO_3 requires the smallest formation energy in four codoping systems. The structures of the codoped systems display obvious lattice distortion, inducing a phase transition from cubic to rhombohedral after codoping. Some impurity Cr, Mn and Co 3d states appear below the bottom of conduction band and some Fe 3d states are located above the top of valence band, which leads to a significant narrowing of band gap after transition metal codoping. The enhancement of visible-light absorption are observed in transition metals(TM=Cr, Mn, Fe, Co) and Zn codoped Sr TiO_3 systems. The prediction calculations suggested that the(Zn,Mn)-and(Zn,Co)-codoped SrTiO_3 could be the desirable visible-light photocatalysts.     

Structural,electronic, and magnetic properties of transition metal doped ReS<Subscript>2</Subscript> monolayer

Magnetic properties of transition-metal (TM) atoms (TM = Co, Cu, Mn, Fe, and Ni) doped ReS₂ monolayer are investigated by ab initio calculations. It is found that magnetism appears in the cases of Co, Fe, and Ni. Among all the samples, the Co-doped system has the largest magnetic moment. Therefore, we further study the interaction in the two-Co-doped system. Our results show that the interaction between two Co atoms is always ferromagnetic (FM), but such FM interaction is obviously depressed by the increasing Co–Co distance, which is well described by a simple Heisenberg model based on the Zener theory. Our results provide useful insight for promising applications of TM-doped ReS₂ monolayer in the future.     

Magnetic and electronic properties of Cr,Mn, and Fe adatoms on Si(001): A first-principles study

The magnetic and electronic properties of TM (TM=Cr, Mn, and Fe) adatoms adsorption on Si(001) surface are studied by means of the first-principles method. For the adsorption of a single TM atom on Si(001), we obtain decreasing spin moments and increasing adsorption energies as TM varies from Cr to Fe. In the case of TM dimers adsorption, the calculated results show that the spin coupling changes from antiferromagnetic (AFM) to ferromagnetic (FM) as the 3d electrons increased. AFM coupling is found to be preferred for Cr, while FM coupling is energetically favorable for Mn and Fe. In the case of TM wires, we find that the FM state is energetically preferred for Mn and Fe atoms on the Si(001) surface, while for Cr wires, the up–down–up state for P–M–M site Cr atoms seems to be more energy favorable. We also find that the silicon surfaces become metallic for the adsorption of TM wires.     

First-principles study of electronic structure and magnetic properties of SrTi1−xMxO3 (M= Cr,Mn, Fe,Co, or Ni)

We used first-principles calculations to conduct a comparative study of the structure and the electronic and magnetic properties of SrTiO₃ doped with a transition metal (TM), namely, Cr, Mn, Fe, Co, or Ni. The calculated formation energies indicate that compared with Sr, Ti can be substituted more easily by the TM ions. The band structures show that SrTi_0.875Cr_0.125O₃ and SrTi_0.875Co_0.125O₃ are half metals, SrTi_0.875Fe_0.125O₃ is a metal, and SrTi_0.875Mn_0.125O₃ is a semiconductor. The 3d TM-doped SrTiO₃ exhibits various magnetic properties, ranging from ferromagnetism (Cr-, Fe-, and Co-doped SrTiO₃) to antiferromagnetism (Mn-doped SrTiO₃) and nonmagnetism (Ni-doped SrTiO₃). The total magnetic moments are 4.0_μB, 6.23_μB, and 2.0_μB for SrTi_0.75Cr_0.25O₃, SrTi_0.75Fe_0.25O₃, and SrTi_0.75Co_0.25O₃, respectively. Room-temperature ferromagnetism can be expected in Cr-, Fe-, and Co-doped SrTiO₃, which agrees with the experimental observations. The electronic structure calculations show that the spin polarizations of the 3d states of the TM atoms are responsible for the ferromagnetism in these compounds. The magnetism of TM-doped SrTiO₃ is explained by the hybridization between the TM-3d states and the O-2p states.     

Structural and magnetic properties of Co-Fe binary alloy monolayers on W(110)

We present an experimental investigation of CoxFe1-x monolayers grown on flat and stepped W(110) surfaces. Atomically resolved scanning tunneling microscopy and low energy electron diffraction reveal continuous miscibility and pseudomorphic growth of Co and Fe for 0相似文献   

Magnetism and electronic structure of Mn- and V-doped zinc blende ZnTe from first-principles calculations

By means of the first-principles full potential linearized augmented plane-wave method within the local density approximation for the exchange-correlation functional, we have investigated the magnetism and electronic structure of Mn- and V-doped zinc blende ZnTe. Total energy calculations show that, for high doping concentration (12.5%), ZnTe:Mn has an antiferromagnetic ground state while the ferromagnetic state is more favorable than the antiferromagnetic state for ZnTe:V. Furthermore, ZnTe with a low doping of Mn (6.25%) has a stable ferromagnetic ground state, which is in agreement with the experimental results. The calculated magnetic moment of ZnTe doped with Mn (V) mainly originates from transition metal Mn (V) atom with a little contribution from Te atom due to the hybridization between Mn (V) 3d and Te 5p electrons. Electronic structure indicates that Mn-doped ZnTe is a semiconductor, but V-doped ZnTe shows a half-metallic characteristic. We also discuss the difference between electronic and magnetic properties for ZnTe doped with 12.5% and 6.25% Mn.     

Ab initio study of magnetic properties in the adsorption of transition-metal atoms on arsenene

The magnetic properties of adsorption of different transition-metal (TM) atoms (Co, Cu, Mn, Fe, and Ni) on arsenene are investigated using density functional theory (DFT). Magnetism appears in the cases of Co, Mn, and Fe. Among all the magnetic cases, the TM atom prefers the same adsorption site. Then, we further study the interaction in two-TM-adsorbed system and different magnetic states are observed. Our results show that both nonmagnetic and ferromagnetic states exist in two-Co-adsorbed system and the p-d hybridization mechanism results in its ferromagnetic state. However, for two Mn and two Fe adsorbed systems, an AFM interaction is found, which could be reasonably explained by the superexchange mechanism. Such multiple magnetic properties may suggest promising applications of TM-adsorbed arsenene in the future.     

Investigation of impurity phase formation for (ZnO)1−x(TMO)x bulk samples formed by ball milling

Structural, compositional, optical and magnetic properties have been studied for polycrystalline (ZnO)_0.90(TMO)_0.10 bulk samples, where TM (transition metal ions) = Mn, Fe, and Co. The quantitative Rietveld analysis showed relatively higher percentage of impurity (spinel and oxide) phases of about 33.76, 52.38 and 55.61% for Mn, Fe and Co doped ZnO samples, respectively. The de-convolution of XPS spectra indicated the presence of different phases. The appearance of shaking satellites in XPS spectra confirmed the presence of different valence states of dopant ions. The red shift in energy band gap, estimated from reflectance UV-vis spectroscopy, was observed for all TM doped bulk samples. For Mn doping, paramagnetic behavior was obtained while for Co and Fe, weak ferromagnetic behavior was observed at room temperature.     

Possible quantum critical point in La(2/3)Ca(1/3)Mn(1-x)Ga x O3

We study the magnetic ground state in La(2/3)Ca(1/3)Mn(1-x)Ga x O3 manganites, where a quantum critical point (QCP) has been theoretically predicted. The metallic ferromagnetic ground state for low Ga doping breaks down for x > or = 0.11, an insulating state being established at low temperatures. Long-range ferromagnetism coexists with short-range magnetic correlations in the concentration range 0.11 < or = x < or = 0.145 while only the short-range correlations survive for x > or = 0.16. We discuss the implications of such a QCP to the physics of manganites and compare to other QCP systems.     

Stability of Ferromagnetism in Fe, Co, and Ni Metals under High Pressure with GGA and GGA+U

The stability of the ferromagnetic state in Fe, Co, and Ni metals under high pressure is investigated using generalized gradient approximation (GGA) and GGA+U within the density functional theory (DFT). It is found that the ferromagnetic state under pressure is very different for Fe, Co, and Ni metals, and is closely associated with the crystal structure. In the case of Fe, a ferromagnetic bcc ground state is obtained at ambient pressure and a nonmagnetic hcp ground state is found at pressure around 12 and 115 GPa for GGA and GGA+U, respectively. For Co, the phase transition from a ferromagnetic hcp to a nonmagnetic fcc is found around 107 GPa for GGA. In contrast to Fe and Co, a ferromagnetic fcc state in Ni is maintained even at 200 GPa. The calculated results suggest that the suppression of ferromagnetism in Fe, Co, and Ni is due to pressure-induced decrease of the density of state at the Fermi level.     

TM掺杂的Ⅲ-Ⅴ族稀磁半导体电磁性质的第一原理计算

使用基于自旋局域密度泛函理论的第一性原理方法对3d过渡金属(TM=V，Cr，Mn，Fe，Co和Ni)掺杂的Ⅲ-Ⅴ族半导体(GaAs和GaP)的电磁性质进行了计算.结果发现：用V，Cr和Mn掺杂时体系将出现铁磁状态，而Fe掺杂时将出现反铁磁状态，Co和Ni掺杂时，其磁性则不稳定.其中，Cr掺杂的GaAs和GaP将可能是具有较高居里温度的稀磁半导体(DMS).在这些DMS系统中，V离子的磁矩大于理论期待值，Fe，Co和Ni离子的磁矩小于理论期待值，Cr和Mn离子的磁矩与期待值的差距取决于晶体的对称性以及磁性离子的能带分布.此外，使用Si和Mn共同对Ⅲ-Ⅴ族半导体进行掺杂，将有利于DMS表现为铁磁状态，并可以使体系的T_C进一步提高. 关键词： 稀磁半导体 过渡金属 掺杂 共掺杂     

Band Alignment for Ambipolar-Doping of Sn_xZn_(1-x) Te Alloys

Using the first-principles band-structure method and a special quasirandom structure(SQS) approach,we have systematically calculated the alloy bowing coefficients and the nature band offsets of SnxZn1-x Te alloys.We show that the bowing coefficients and band gaps of these alloys are sensitively composition dependent.Due to wave functions full overlapping and delocalization of the Sn outermost p orbits and Zn s orbits,the coupling between these states is very strong,resulting in a significant downshift of conduction band edge with the increase of the Sn concentration x,While the valence band edge keeps almost unchanged compared with that of the binary ZnTe,thus improving the possibility for ambipolar-doping.