Resonant photoemission at the L3 absorption edge of Mn and Ti and the electronic structure of 1T-Mn0.2TiSe2

Resonant valence band x-ray photoelectron spectra (ResPES) excited near the 2p(3/2) core level energies, 2p x-ray photoelectron spectra (XPS) and L(3,2) x-ray absorption spectra (XAS) of Ti and Mn in single crystals of 1T-Mn(0.2)TiSe(2) were studied for the first time. The ionic-covalent character of the bonds formed by the Mn atoms with the neighboring Se atoms in the octahedral coordination is established. From the XPS and XAS measurements compared with the results of atomic multiplet calculations of Ti and Mn L(3,2) XAS, it is found that the Ti atoms are in the ionic state of 4 + and the Mn atoms are in the state of 2 +. In ResPES of Mn(0.2)TiSe(2) excited near the Ti 2p(3/2) and Mn 2p(3/2) absorption edges the Ti 3d and Mn 3d bands at binding energies just below the Fermi level are observed. According to theoretical calculations of E(k) the Ti 3d states are localized in the vicinity of the Γ point and the Mn 3d states are localized along the direction K-Γ-M in the Brillouin zone of the crystal.     

BaTi2As2O电子结构的第一性原理研究

利用基于密度泛函理论的平面波赝势方法,研究BaTi2As2O的能带结构、费米面和态密度.发现:BaTi2As2O是一种非磁性金属,费米能级处的态密度主要来自Ti原子的3d电子,Ti 3d轨道和As 4p轨道有较强的杂化.没有发现其磁性基态,说明Ti原子上没有局域磁矩,与Pickett对Na2Ti2Sb2O的研究结论相吻合.     

Role of Ti 3d carriers in mediating the ferromagnetism of Co∶TiO2 anatase thin films

We study the surface and bulk electronic structure of the room-temperature ferromagnet Co∶TiO(2) anatase films using soft- and hard-x-ray photoemission spectroscopy with probe sensitivities of ～1 and ～10 nm, respectively. We obtain direct evidence of metallic Ti(3+) states in the bulk, which get suppressed to give a surface semiconductor, thus indicating the difference in electronic structure between surface and bulk. X-ray absorption and resonant photoemission spectroscopy reveal Ti(3+) electrons at the Fermi level (E(F)) and high-spin Co(2+) electrons occurring away from E(F). The results show the importance of the charge neutrality condition: Co(2+)+V(O)(2-)+2Ti(4+)?Co(2+)+2Ti(3+) (V(O) is oxygen vacancy), which gives rise to the elusive Ti 3d carriers mediating ferromagnetism via the Co 3d-O 2p-Ti 3d exchange interaction pathway of the occupied orbitals.     

Theoretical characterization of the ground and optically excited states of alpha'-NaV2O5

The character of the ground and optically excited states was investigated by quantum chemical calculations. We propose a rung ground state with V 3d(1)(xy)-O 2p(1)(y)-V 3d(1)(xy) character, instead of the conventional picture of one unpaired electron shared by 2 V ions. The unpaired electron on O is low-spin coupled to the V d electrons and spin density is predicted to be localized on vanadium. The absorption peak at 0.9 eV is assigned to a state with similar orbital occupations but a different spin coupling scheme, resulting in spin density localized on the bridging oxygen.     

Signature of carrier-induced ferromagnetism in Ti(1-x)Co(x)O(2-delta): exchange interaction between high-spin Co2+ and the Ti 3d conduction band

X-ray photoemission spectroscopy measurements were performed on thin-film samples of rutile Ti(1-x)Co(x)O(2-delta) to reveal the electronic structure. The Co 2p core-level spectra indicate that the Co ions take the high-spin Co2+ configuration, consistent with substitution on the Ti site. The high-spin state and the shift due to the exchange splitting of the conduction band suggest strong hybridization between carriers in the Ti 3d t(2g) band and the t(2g) states of the high-spin Co+2 . These observations support the argument that room temperature ferromagnetism in Ti(1-x)Co(x)O(2-delta) is intrinsic.     

Electronic structure of charge- and spin-controlled Sr(1-(x+y))La(x+y)Ti(1-x)Cr(x)O3

We present the electronic structure of Sr(1-(x+y))La(x+y)Ti(1-x)Cr(x)O3 investigated by high-resolution photoemission spectroscopy. In the vicinity of the Fermi level, it was found that the electronic structure was composed of a Cr 3d local state with the t(2g)3 configuration and a Ti 3d itinerant state. The energy levels of these Cr and Ti 3d states are well interpreted by the difference of the charge-transfer energy of both ions. The spectral weight of the Cr 3d state is completely proportional to the spin concentration x irrespective of the carrier concentration y, indicating that the spin density can be controlled by x as desired. In contrast, the spectral weight of the Ti 3d state is not proportional to y, depending on the amount of Cr doping.     

Structural, magnetic and electronic structure studies of Mn doped TiO2 thin films

We report structural, magnetic and electronic structure study of Mn doped TiO₂ thin films grown using pulsed laser deposition method. The films were characterized using X-ray diffraction (XRD), dc magnetization, X-ray magnetic circular dichroism (XMCD) and near edge X-ray absorption fine structure (NEXAFS) spectroscopy measurements. XRD results indicate that films exhibit single phase nature with rutile structure and exclude the secondary phase related to Mn metal cluster or any oxide phase of Mn. Magnetization studies reveal that both the films (3% and 5% Mn doped TiO₂) exhibit room temperature ferromagnetism and saturation magnetization increases with increase in concentration of Mn doping. The spectral features of XMCD at Mn L_3,2 edge show that Mn²⁺ ions contribute to the ferromagnetism. NEXAFS spectra measured at O K edge show a strong hybridization between Mn, Ti 3d and O 2p orbitals. NEXAFS spectra measured at Mn and Ti L_3,2 edge show that Mn exist in +2 valence state, whereas, Ti is in +4 state in Mn doped TiO₂ films.     

Mn-N共掺杂TiO_2电子结构和光学性质的第一性原理计算

本文采用第一性原理研究了Mn、N掺杂TiO_2和Mn-N共掺杂TiO_2的能带结构、态密度和Mn-N共掺TiO_2对体系介电函数与吸收谱的影响.研究结果表明,Mn掺杂TiO_2的能带结构的禁带内出现的杂质能级是由Mn的3d轨道贡献;N掺杂TiO_2在费米能级处的杂质能级则由O 2p,Ti 3d和N 2p轨道杂化形成;Mn-N共掺的TiO_2能带在费米能级处的杂质能级则由O 2p,Ti和Mn的3d以及N 2p轨道杂化形成;对于介电函数,在低能区间(2.5 e V),理想TiO_2无介电峰,Mn-N共掺体系则出现了两个介电峰,原因在于Mn 3d态和N 2p态使介电峰值向低能区移动;同时,与理想TiO_2的吸收谱相比,最大的变化是在可见光区出现了一个吸收峰,且在可见光区的响应的范围变宽.     

E expansion for a Fermi gas at infinite scattering length

We show that there exists a systematic expansion around four spatial dimensions for Fermi gas in the unitarity regime. We perform the calculations to leading and next-to-leading orders in the expansion over E = 4-d, where d is the dimensionality of space. We find the ratio of chemical potential and Fermi energy to be mu/epsilon(F) =1/2 (E 3/2) + 1/16 (E 5/2) lnE -0.0246E (5/2) + ... and the ratio of the gap in the fermion quasiparticle spectrum and the chemical potential to be Delta/mu =2E(-1) - 0.691 + ... . The minimum of the fermion dispersion curve is located at |p|=(2mepsilon(0))(1/2), where epsilon_(0)/mu=2+O(E). Extrapolation to d=3 gives results consistent with Monte Carlo simulations.     

The effects of O deficiency on the electronic structure of rutile TiO2

Ab initio density functional calculations (plane wave GGA, CASTEP) were performed to determine the effect of O deficiency on the electronic structure of rutile, TiO₂. O deficiency was introduced through either the removal of O or the insertion of interstitial Ti atoms. At physically realistic concentrations of O vacancies in the rutile lattice (i.e. 25% and less) O deficiency results in the population of the bottom of the conduction band, the location of the Ti 3d orbitals in the pure structure, increasingly with increasing vacancy concentration. We propose that this could be confused with the formation and population of gap states especially where O vacancies occur in isolated positions in the lattice. In contrast, Ti interstitials introduce a defect state into the energy gap, without an overall reduction in the size of the energy gap. O vacancies result in a spin polarized solution, whereas Ti interstitials do not.     

Mn-N共掺杂TiO2电子结构和光学性质的第一性原理计算

本文采用第一性原理研究了Mn、N掺杂TiO2和Mn-N共掺杂TiO2的能带结构、态密度和Mn-N共掺TiO2对体系介电函数与吸收谱的影响.研究结果表明,Mn掺杂TiO2的能带结构的禁带内出现的杂质能级是由Mn 的3d轨道贡献;N掺杂TiO2在费米能级处的杂质能级则由O 2p, Ti 3d和N 2p轨道杂化形成; Mn-N共掺的TiO2能带在费米能级处的杂质能级则由O 2p, Ti 和Mn的3d以及N 2p轨道杂化形成; 对于介电函数,在低能区间(<2.5 eV),理想TiO2无介电峰, Mn-N共掺体系则出现了两个介电峰,原因在于Mn 3d态和N 2p态使介电峰值向低能区移动;同时,与理想TiO2的吸收谱相比,最大的变化是在可见光区出现了一个吸收峰,且在可见光区的响应的范围变宽.     

掺杂三价铽离子的碱土金属钨酸盐的光谱特性研究

本文合成了一系列掺杂三价铽离子的碱土金属钨酸盐,测定了晶体的X射线粉末衍射数据及发射光谱和激发光谱.所合成的化合物均属四方晶系,I41/a空间群,晶胞多数随金属离子半径的增大而增大.研究了在这些晶体中三价铽离子5D3→7Fi和5D4→7Fi跃迁发射的激发态及其能量传递机理和浓度猝灭机制.讨论了发射光谱和激发光谱与铽离子浓度、金属离子半径及铽离子在晶体中的溶解度的关系.     

多金属氧酸盐α-Na7H[GaW9Fe3(H2O)3O37]·16H2O合成和光谱

合成了α Na7H[GaW9Fe3 (H2 O) 3 O3 7]·16H2 O(简写为α GaW9Fe3 ,以下类同 )通过红外、紫外、元素分析、光电子能谱、极谱等手段进行了表征 ,并对该配合物的红外、紫外、元素分析、光电子能谱进行分析。配合物的红外光谱都出现了Keggin杂多阴离子所具有的νas(W—Oa—W ) ,νas(W—Ob—W ) ,νas(W—Oc—W) 和νas(W—Od—W ) 四种基本特征振动峰 ,表明所合成配合物也具有Keggin结构。所合成的配合物的紫外光谱都在2 10和 2 6 8nm附近有两个荷移跃迁带 ,分别对应于Od—W的 pπ dπ 荷移跃迁和Ob/Oc的 pπ dπ 荷移跃迁。Ob/Oc 的 pπ dπ荷移跃迁为特征吸收峰。GaW9和GaW9Fe3 都有一个 4电子还原波 ,且E1/ 2 比GaW9更负 ,因此所合成的配合物GaW9Fe3 为α体。GaW9Fe3 室温的磁矩比有效磁矩纯自旋值 6 0 3× 10 -2 3 A·m2 低 ,这暗示了杂多阴离子的三金属簇中 3个铁原子间存在反铁磁性自旋交换作用。对M ssbauer谱进行了分析 ,铁与桥氧之间形成了d pπ键 ,铁的d轨道与桥氧的 p轨道发生了重叠 ,p ,d电子之间产生了反磁性交换。因此M ssbauer谱是研究配合物磁性的有效手段。对该配合物的红外、紫外、光电子能谱、M ssbauer谱进行分析。为深入研究磁性与配合物结构的关系 ,为进一步研究其作为功能材     

Charge-transfer hole-lifetime broadening of the Cu Auger-electron spectra of high Tc superconductors

The satellite intensity in the Cu L₂₃-VV Auger-electron spectrum of the high T_c superconductor (YBa₂Cu₃O_7−x, 123) is much more enhanced as compared to that of CuO. This enhancement was previously interpreted by Ramaker et al. [D.E. Ramaker, N.H., Turner, F.L. Hutson, Phys. Rev. B 38 (1988) 11368] as a result of the mixing between the ddp and dpp states. Here, d is a hole in the Cu 3d band and p is a hole in the O 2p band. However, the dramatic Auger electron spectroscopy (AES) spectral lineshape change from CuO to 123 is not only in the charge-transfer (CT) satellite but also in the main-line width. The change arises from the transit of the “pairing” of two bound d holes in the ddp state to that of two bound p holes in the dpp state. As a result, in CuO there is no CT satellite but the dd state becomes a resonant state broadened by the CT hole-lifetime broadening, whereas in 123 the dd state becomes a mixture of a resonant-like state and nonresonant band states. The present many-body theory can explain the overall AES lineshape change from CuO to 123.     

Eu3+摩尔浓度对Y2O2S:Eu3+,Mg2+,Ti4+红色长余辉材料光谱的影响

用高温固相法制备了Y2O2S：Eu^3 ,Mg^2 ,Ti^4 红色长余辉材料。测量了该材料的余辉曲线,余辉时间为1h以上;由X射线衍射得到晶体结构为Y2O2S.测量了不同Eu^3 摩尔浓度下的激发光谱和发射光谱,得到从^5DJ(J=0,1,2,3)^-7FJ(J=0,1,2,3,4,5)的发射谱线,并得到位于260,345,468和540nm激发峰。由于激活剂饱和效应,Y2O2S：Eu^3 ,Mg^2 ,Ti^4 发射光谱中513．6,540．1,556．4,587．3和589．3nm属于从^5D2,^5D1到^7FJ(J=0,1,2,3,4)跃迁的发射峰随Eu^3 摩尔浓度的增加相对削弱;激发谱包括位于350nm左右属于电荷转移态吸收(Eu^3 -O^2-,Eu^3 -S^2 )的激发主峰和在可见光区位于468,520和540nm属于Eu^3 离子4f-4厂吸收的激发峰。随着Eu^3 摩尔浓度的增加,位于468,520和540nm的激发峰相对增强。     

Electronic structure studies of Mg0.95Mn0.05Fe2−2xTi2xO4 (0x0.8)

The electronic structure of Mg_0.95Mn_0.05Fe_2−2xTi_2xO₄ (0x0.8) compound is investigated using near edge X-ray absorption fine structure, (NEXAFS) spectroscopy measurements, carried out at O K, Fe and Ti L_3,2-edges at room temperature. The O K-edge spectra indicate that the Fe 3d orbitals have been considerably modified and a new spectral feature start dominating in the pre-edge region at higher Ti doping. The Fe 2p NEXAFS spectra exhibit a mixed valent Fe²⁺/Fe³⁺ states apart from the conversion of Fe³⁺ to Fe²⁺ with the substitution of Ti ions. The Ti L_3,2-edge spectra indicate that Ti ions remain unchanged at 4+ state. These variations in the host electronic structure due to Ti substitution are consistent with the dielectric and transport properties of the material.     

Electronic exchanges between adsorbed Ni atoms and TiO2(1 1 0) surface evidenced by resonant photoemission

Nickel was deposited on stoichiometric TiO₂(1 1 0) surface in the 0.02–2.1 equivalent monolayer (eqML) range and analyzed by means of photoemission and resonant photoemission. In the case of very low coverage (lower than 0.1 eqML), deposited nickel reacts with the surface through an electronic transfer from nickel atoms towards titanium ions. This exchange caused the filling of unoccupied Ti3d states leading to the increase of a peak in the TiO₂ band gap. These states can be better characterized through resonant photoemission experiments at the Ti 3p → 3d absorption edge: for very low coverage, these states in the TiO₂ band gap have resonant behavior of Ti3d electrons rather than Ni3d ones, confirming the filling of Ti3d states and thus electron transfer between nickel and titanium. For coverage higher than 0.14 eqML, nickel peaks (both Ni3p core level and valence band) should be related to the presence of metallic nickel in small clusters.     

Ti：Al2O3晶体紫外及可见光谱的浓度效应研究

通过对不同浓度的Ｔｉ：Ａｌ２Ｏ３晶体紫外吸收光谱，可见偏振荧光光谱及其激发光谱的研究，发现峰值４２０ｎｍ的宽带可见荧光，室温下较强的σ偏振光在低温（７７Ｋ）下变得比π偏振光弱。在液氮温度下π偏振光谱分裂成３３０ｎｍ，４２０ｎｍ，４６０ｎｍ，５６０ｎｍ等离荧光带。研究认为，这些发光带分别与色心（Ｆ＾＋，Ｆ心）及Ｔｉ＾４＾＋离子的电荷转移跃适有关。并且室温下可见荧光具有的较强的浓度猝灭及现象来源于Ｔｉ     

焙烧条件对Ce离子价态影响的XPS研究

在均相沉淀法制备含铈化合物的过程中,利用XRD和IR尤其是XPS研究了含Ce化合物在不同焙烧温度条件下产物的结构、铈离子的价态变化、化合物表面性质及其内核电子构型。XRD结果表明,焙烧温度的不同可产生不同的铈基化合物,导致产物中Ce离子价态的变化,IR结果也证实了这一点。单纯均相沉淀法得到的产物为三价的斜方晶系的单晶Ce_2O(CO_3)_2·H_2O(Ⅲ)微粒;将三价的Ce_2O(CO_3)_2·H_2O加热到200℃,产物转化成高价态六价化合物CeO(CO_3)_2·H_2O(Ⅵ);加热温度再升高到250℃,产物转化为稳定的四价化合物CeO_2(Ⅳ)。XPS通过对3种不同价态化合物的O(1s),Ce(3d),Ce(4d)峰进行精细扫描,研究了产物的表面性质及其内部电子构型,比较结果证实了不同价态铈化合物的形成是由于内核价电子构型的差异引起的。     

Influence of nitrogen doping on the defect formation and surface properties of TiO2 rutile and anatase

Nitrogen doping-induced changes in the electronic properties, defect formation, and surface structure of TiO2 rutile(110) and anatase(101) single crystals were investigated. No band gap narrowing is observed, but N doping induces localized N 2p states within the band gap just above the valence band. N is present in a N(III) valence state, which facilitates the formation of oxygen vacancies and Ti 3d band gap states at elevated temperatures. The increased O vacancy formation triggers the 1 x 2 reconstruction of the rutile (110) surface. This thermal instability may degrade the catalyst during applications.