Luminescence of CsBr:Eu films grown by liquid-phase epitaxy

By liquid-phase epitaxy from an aqueous alcoholic solution, we have obtained films of the well-known storage phospor CsBr:Eu, and we have studied their cathodoluminescence and photoluminescence (PL) spectra compared with the undoped CsBr films. We have established that the structure of the photoluminescence centers of the CsBr:Eu films when excited by laser radiation in the absorption band of the Eu²⁺ ions (λ = 337 nm) includes Eu²⁺-V_Cs isolated dipole centers and CsEuBr₃ aggregate centers, and also luminescence centers based on inclusions of hydroxyl group OH⁻ with the corresponding emission bands in the 440 nm, 520 nm, and 600 nm regions. We have studied the dependence of the spectra and the intensity of the photoluminescence for CsBr:Eu films on annealing temperature in air at 423–483 K, compared with analogous dependences for CsBr:Eu single crystals obtained from the melt. We have shown that annealing the films at T = 423–463 K leads to rapid formation of CsEuBr3 aggregate luminescence centers, while for T > 473 K thermal degradation of these centers occurs. We conclude that the observed differences between the photoluminescence spectra of CsBr:Eu films and CsBr:Eu single crystals may be due to additional doping of the films with OH⁻ ions. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 73, No. 2, pp. 191–194, March–April, 2006.     

Effect of isoelectronic impurities K<Superscript>+</Superscript> and I<Superscript>−</Superscript> on luminescence of CsBr:Eu<Superscript>2+</Superscript> crystals

We have investigated the photoluminescence (PL) and photostimulated luminescence (PSL) spectra at 300 K to study the effect of isoelectronic impurities K⁺ and I⁻ on the formation and energy structure of Eu²⁺-V_Cs isolated dipole centers and aggregate centers in the form of single crystals of CsEuBr₃ in CsBr:Eu²⁺ single crystals. We have shown that K⁺ and I⁻ impurities in a concentration of 5 mol% do not have a substantial effect on the energy spectrum of isolated dipole centers in CsBr:Eu²⁺ single crystals and the processes for the formation of such centers during growth of CsBr:Eu single crystals from the melt by the Bridgman method. We have established that in Cs_0.95K^0.05Br:Eu²⁺, more favorable conditions are realized for the formation of aggregate centers than in CsBr:Eu²⁺ and CsBr^0.95K^0.05Br:Eu²⁺ single crystals. So in order to improve the storage properties of phosphors based on CsBr:Eu²⁺, in particular for increasing the efficiency of PSL excitation, it is expedient to dope them with K⁺ impurity in a concentration up to 5 mol%. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 74, No. 5, pp. 627–630, September–October, 2007.     

Specific features of absorption and luminescence in CsBr: EuOBr crystals

The specific features of the absorption, photoluminescence, x-ray luminescence, thermally stimulated luminescence, and photostimulated luminescence spectra of CsBr: Eu²⁺ single crystals grown using the Bridgman method are investigated in the temperature range 80–500 K at the highest possible dopant content (0.1–0.4 mol % EuOBr in the batch) required for preparing perfect crystals. It is shown that an increase in the dopant content leads to a broadening of the absorption and photoluminescence excitation bands with maxima at wavelengths of 250 and 350 nm due to the interconfigurational transitions 4f⁷(⁸S_7/2) → 4f⁶5d(e _g , t_2g) in Eu²⁺ ions. The photoluminescence and photostimulated luminescence spectra of CsBr: EuOBr single crystals (0.1–0.4 mol % EuOBr) contain a band at a wavelength of λ_max=450 nm and bands at wavelengths of λ_max=508–523 and 436 nm. The last two bands are assigned to Eu²⁺-V_Cs isolated dipole centers and Eu²⁺-containing aggregate centers, respectively. It is revealed that the intensity of the luminescence associated with the aggregate centers (λ_max=508–523 nm) is maximum at an EuOBr content of less than or equal to 0.1 mol % and decreases with an increase in the dopant content. The possibility of forming CsEuBr₃-type nanocrystals that are responsible for the green luminescence observed at a wavelength λ_max=508–523 nm in CsBr: Eu crystals is discussed. The intensity of photostimulated luminescence in the CsBr: EuOBr crystals irradiated with x-ray photons is found to increase as the dopant content increases. It is demonstrated that CsBr: EuOBr crystals at a dopant content in the range 0.3–0.4 mol % can be used as x-ray storage phosphors for visualizing x-ray images with high spatial resolution.     

The role of hydrogen- and hydroxyl-doping in CsBr:Eu

Hydrogen- and hydroxyl-doped CsBr:Eu²⁺ storage phosphors were investigated by photostimulated luminescence (PSL) spectra, absorption spectra and PSL lifetime spectra. Hydrogen- and hydroxyl-doping plays an active role related to the trap centers in CsBr:Eu²⁺ storage phosphors. A sharp increase in the PSL yield was observed for non-hydroxyl-doped CsBr:Eu²⁺ annealed in 5%H₂+95%Ar atmosphere. For hydroxyl-doped CsBr:Eu²⁺, the PSL lifetime (361 ns) is obviously shorter than that of typical CsBr:Eu²⁺ storage phosphors.     

Luminescence of CaGa<Subscript>2</Subscript>Se<Subscript>4</Subscript>:Eu crystals

We have studied photoluminescence and thermoluminescence (PL and TL) in CaGa₂Se₄:Eu crystals in the temperature range 77–400 K. We have established that broadband photoluminescence with maximum at 571 nm is due to intracenter transitions 4f⁶ 5d–4f⁷ (⁸S_7/2) of the Eu²⁺ ions. From the temperature dependence of the intensity (log I–10³/T), we determined the activation energy (E _a = 0.04 eV) for thermal quenching of photoluminescence. From the thermoluminescence spectra, we determined the trap depths: 0.31, 0.44, 0.53, 0.59 eV. The lifetime of the excited state 4f6 5d of the Eu²⁺ ions in the CaGa₂Se₄ crystal found from the luminescence decay kinetics is 3.8 μsec. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 76, No. 1, pp. 112–116, January–February, 2009.     

Luminescence studies on photostimulable phosphor CsBr:Eu2+

Photostimulable phosphor CsBr:Eu²⁺ is prepared through a solid-state reaction. The effect of annealing atmosphere on photoluminescence and photostimulated luminescence was investigated. Optimum luminescence intensity was obtained when samples were prepared at 350°C in air atmosphere. The effect of irradiation of gamma and neutron had resulted in the formation of optically stimulable traps with different trap depths. The role of monovalent and divalent dopants on thermoluminescence dosimetric properties has been discussed.     

Thermo-and photostimulated luminescence of CaI2: Tl and CaI2: Pb crystals

Thermo-and photostimulated luminescence of CaI₂: Tl and CaI₂: Pb scintillation crystals under optical and X-ray excitation is studied. It is shown on the basis of the results obtained with account for the data of studies of photo-and X-ray-luminescent properties of these scintillators that Tl⁺ and Pb²⁺ ions form complex capture centers with host defects. These centers are responsible for the thermostimulated luminescence in the temperature range of 150–295 K, and the centers of charge carrier trapping are spatially separated from the centers of recombination emission. An assumption is made that thermo-and photostimulated luminescence of CaI₂: Tl and CaI₂: Pb crystals under optical excitation is observed mainly due to the delocalization of charge carriers from hydrogen-containing centers responsible for the excitation band at 236 nm and the photoluminescence of CaI₂ with a maximum at 395 nm. The luminescence of CaI₂: Tl crystals in the 510-nm band and CaI₂: Pb crystals in the 530-nm band is determined by the radiative decay of near-activator excitons.     

Recombination processes in europium-doped cadmium iodide crystals

Results of comprehensive research into optical and luminescent-kinetic characteristics of europium-doped cadmium iodide crystals excited by nitrogen laser radiation, α-particles, and x-rays are presented. Crystals under study have been grown by the Bridgman–Stockbarger method. The doping EuCl₃ admixture was introduced into the charge in quantities of about 0.05 and 1.0 mol%. Impurity absorption detected in the near-edge region of the crystals is interpreted as part of the Eu²⁺ ion long-wavelength band associated with f–d-transitions. The cation impurity and matrix defects in CdI₂:Eu²⁺ crystals create complex centers responsible for emission with a maximum in the 580–600-nm region. The short component in the luminescence decay kinetics of weakly-doped crystal excited by α-particles and x-ray photons is due to the exciton emission characteristic of CdI₂. The slow component in the scintillation pulse results from recombination of charge carriers followed by creation of exciton-like states on the defect-impurity centers. Laser or x-ray excitation induces light-sum accumulation on the trapping levels at a depth of 0.2–0.6 eV that is mainly related to matrix microdefects. Trapping centers associated with the chlorine impurity are observed in the heavily-doped crystal. Photostimulated luminescence at 85 K arising at the electron stage of the recombination process is caused by recombination of electrons released from F-type centers with holes localized near the activator. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 76, No. 3, pp. 358–364, May–June, 2009.     

The Measurements of Photostimulated Luminescence in Alkali Doped BaFBr:Eu2☎ at Liquid Nitrogen Temperature

Considerable increase of the photostimulated luminescence (PSL) intensity and red shift of the excitation spectrum was obtained by alkali doping of BaFBr:Eu^2? crystals [1]. The band of the F_A(Br^?) centers about 0.1 eV shifted to low energy side against the “normal” F(Br^?) centers. The F_A(Br^?) centers are destroyed after heating to 330 K.     

Ionoluminescence of Eu<Superscript>2+</Superscript>–Eu<Superscript>3+</Superscript> clusters in NaF: Eu single crystals

The radiation-impurity modification of NaF: Eu crystals results in the formation of optically active planar heterostructures with a complex set of luminescence centers, including, in particular, clusters of the Eu²⁺–Eu³⁺ type. The luminescence spectra of Eu²⁺–Eu³⁺ centers exhibit bands at wavelengths of 409 and 442 nm, which are associated with Eu²⁺ ions in nonequivalent crystallographic positions, and a band at a wavelength of 610 nm, which is attributed to Eu³⁺ ions. The luminescence spectra of irradiated NaF: Eu samples contain a broad band with a maximum at 506 nm due to the presence of F₂ + F ₊ ³ color centers in the crystal.     

Radiation hardness of CsBr:Eu

In this study,results on the radiation damage of the storage phosphor CsBr:Eu²⁺ are presented. It is shown that a high X-ray dose causes a significant deterioration of the photostimulated luminescence accompanied by a degradation of the UV-excited Eu²⁺ fluorescence. Since no related dose-dependent increase of Eu³⁺ luminescence is observed, the decrease of Eu²⁺ fluorescence is attributed to an agglomeration of Eu²⁺ leading to luminescence quenching. The correlated diffusivity of Eu²⁺ ions is ascribed to the presence of aggregated F-centres such as M_Eu-centres observed by means of absorption spectroscopy.     

The photoluminescence,afterglow and up conversion photostimulated luminescence of Eu3+ doped Mg2SnO4 phosphors

The Mg₂SnO₄:Eu³⁺ phosphor with reddish photoluminescence, green afterglow and photostimulated luminescence is obtained by the solid state method. The host related afterglow is greatly enhanced by doping of Eu³⁺ and it can last nearly 6 h when the Eu³⁺ concentration is 1 mol%. The photostimulated luminescence is found to be weakened by doping of Eu³⁺. It was revealed that all the shallow traps and a part of the deep traps are involved in afterglow. The majority of deep traps are responsible for photostimulated luminescence. The impact of doping Eu³⁺ on the afterglow and photostimulated luminescence is investigated and we propose a feasible interpretation.     

Luminescence of europium and ytterbium ions in strontium hexaborate

We have studied the luminescent properties of Eu^2+/3+ and Yb²⁺ ions in strontium hexaborate SrB₆O₁₀ for excitation in the 120–400 nm region. The luminescence spectra of Ln²⁺ ions in SrB₆O₁₀ consist of overlapping bands in the 370–520 nm region, due to 5d → 4f transitions at several nonequivalent centers. In the excitation spectra, besides the bands associated with 4f → 5d transitions in the Ln²⁺ ions, we also observe a band in the 135–160 nm region due to the transitions O(2p) → B(2s,2p) within the borate anions. The luminescence of the Eu³⁺ ions is excited most efficiently in the region of the Eu³⁺ charge transfer band (λ_max = 226 nm). The results obtained are compared with data for Ln in other strontium borates. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 73, No. 6, pp. 770–774, November–December, 2006.     

Thermally stimulated recombination processes and luminescence in Li<Subscript>6</Subscript>(Y,Gd,Eu)(BO<Subscript>3</Subscript>)<Subscript>3</Subscript> crystals

The thermally stimulated recombination processes and luminescence in crystals of the lithium borate family Li₆(Y,Gd,Eu)(BO₃)₃ have been investigated. The steady-state luminescence spectra under X-ray excitation (X-ray luminescence spectra), the temperature dependences of the X-ray luminescence intensity, and the glow curves for the Li₆Gd(BO₃)₃, Li₆Eu(BO₃)₃, Li₆Y_0.5Gd_0.5(BO₃)₃: Eu, and Li₆Gd(BO₃)₃: Eu compounds have been measured in the temperature range 90–500 K. In the X-ray luminescence spectra, the band at 312 nm corresponding to the ⁶ P _J → ⁸ S _7/2 transitions in the Gd³⁺ ion and the group of lines at 580–700 nm due to the ⁵ D ₀ → ⁷ F _J transitions (J = 0–4) in the Eu³⁺ ion are dominant. For undoped crystals, the X-ray luminescence intensity of these bands increases by a factor of 15 with a change in the temperature from 100 to 400 K. The possible mechanisms providing the observed temperature dependence of the intensity and their relation to the specific features of energy transfer of electronic excitations in these crystals have been discussed. It has been revealed that the glow curves for all the crystals under investigation exhibit the main complex peak with the maximum at a temperature of 110–160 K and a number of weaker peaks with the composition and structure dependent on the crystal type. The nature of shallow trapping centers responsible for the thermally stimulated luminescence in the range below room temperature and their relation to defects in the lithium cation sublattice have been analyzed.     

Charge states of the activator and size effects in BaF2: Eu nanophosphors

ABSTRACT

According to the spectra of stationary X-ray excited luminescence (XEL) of BaF₂: Eu nanophosphors at 80 and 294 K, it was revealed that the thermal annealing of fine-grained nanoparticles (d?=?35?nm) in the range of 400–1000°C, which is accompanied by an increase of their sizes in the range of 58–120?nm, does not result in effective changes of the charge state of Eu^{3 +} → Eu^{2 +} activator, in contrast to CaF₂: Eu nanoparticles. The maximum light output of X-ray excited luminescence of BaF₂: Eu nanophosphors in the 590?nm emission band of Eu³⁺ ion was observed at an annealing temperature of 600°C with the average size of nanoparticles 67?nm. The subsequent growth of annealing temperatures, especially in the range of 800–1000°C, causes decrease in the light output of X-ray excited luminescence due to the increase of defect concentration in the lattice as a result of sharp increase of nanoparticle sizes and their agglomeration. In BaF₂: Eu nanoparticles of 58?nm size, according to the thermostimulated luminescence (TSL) spectrum, transformation of Eu³⁺ → Eu²⁺ under the influence of long-time X-ray irradiation was revealed for the peak of 151?K. Thus, X-ray excited luminescence spectra of BaF₂: Eu nanophosphors are formed predominantly due to the emission of Eu³⁺ ions, while emission of Eu²⁺ ions is observed in the TSL spectra.     

luminescence of BaGa<Subscript>2</Subscript>Se<Subscript>4</Subscript> crystals activated by Eu<Superscript>2+</Superscript> and Ce<Superscript>3+</Superscript> ions

We have studied the effect of doping with Eu²⁺ and Ce³⁺ ions on the photoluminescence (PL) of BaGa₂Se₄ crystals in the temperature range 77–300 K. We have established that the broad bands with maxima at wavelengths 456 nm and 506 nm observed in the photoluminescence spectra of BaGa₂Se₄:Ce³⁺ crystals are due to intracenter transitions 5d → ²F_7/2 and 5d →²F_5/2 of the Ce³⁺ ions, while the broad photoluminescence band with maximum at 521 nm in the spectrum of BaGa₂Se₄:Eu²⁺ is associated with 4f⁶ 5d → 4f⁷ (⁸S_7/2) transitions of the Eu²⁺ ion. We show that in BaGa₂Se₄:Eu²⁺,Ce³⁺ crystals, excitation energy is transferred from the Ce³⁺ ions to the Eu²⁺ ions.     

Luminescence studies of thallium co-doped KBr:Eu2+ powder phosphors

In this study, photoluminescence (PL) and photostimulated luminescence (PSL) properties in KBr:Eu²⁺, Tl⁺ powder phosphors are reported. PL emission spectra of these Tl⁺ co-doped KBr:Eu²⁺ phosphors show four overlapping bands around 310, 325, 360 and 375 nm in addition to the characteristic of Eu²⁺ ions at 420 nm. These additional short wavelength bands were attributed to centres involving Tl⁺ ions. The decrease in PSL intensity of γ-irradiated KBr:Eu²⁺, Tl⁺ powder phosphors with Tl⁺ concentration and the absence of thallium emission bands in PSL were attributed to the efficient electron trapping by Tl⁺ ions during irradiation.     

Energy transfer between Ce3+ and Eu2+ in doped KSrPO4

Powder samples of KSrPO₄ doped with Eu²⁺ and Ce³⁺ were prepared by combustion-assisted synthesis. Their structures and photoluminescence spectra were systemically studied. Energy transfer from Ce³⁺ to Eu²⁺ was observed by investigating the optical properties from photoluminescence spectra in Eu²⁺ single doped and Ce³⁺–Eu²⁺ co-doped KSrPO₄. The enhancement of UV excitation is attributed to energy transfer from Ce³⁺ to Eu²⁺, and Ce³⁺ plays a role as a sensitizer. Ce³⁺–Eu²⁺ co-doped KrSrPO₄ powders can possibly be applied as blue phosphors in the fields of lighting and display.     

Spectral and kinetic characteristics of CdI<Subscript>2</Subscript> and CdI<Subscript>2</Subscript>:Pb scintillators

We have studied the effect of lead dopant on the optical absorption, photoluminescence, and x-ray luminescence spectra, and the scintillation characteristics of CdI₂ at room temperature. The crystals for the study were grown by the Stockbarger-Bridgman method. Activation of CdI₂ from the melt by the compound PbI₂ leads to the appearance in the absorption spectra in the near-edge region of an activator band at 395–405 nm, which is interpreted as an A band connected with electronic transitions from the ¹S₀ state to the ³P₁ levels in the Pb²⁺ ion. For x-ray excitation, CdI₂:Pb²⁺ crystals with optimal dopant concentration (∼1.0 mol%) are characterized by a light yield with maximum in the 570–580 nm region that is an order of magnitude higher than for CdI₂ crystals in the 490–500 nm band. For α excitation, the radioluminescence kinetics for cadmium iodide is characterized by a very short (∼0.3 nsec) rise time and fast decay of luminescence, with τ₁ ≈ 4 nsec and τ₂ = 10–76 nsec. Depending on the conditions under which the crystals were obtained, the fast component fraction is 95%–99%. The crystal is characterized by a similar scintillation pulse in the case of excitation by x-ray pulses. The radioluminescence pulse shape for CdI₂:Pb in the decay stage is predominantly exponential, with luminescence decay time constants τ₁ ≈ 10 nsec and τ₂ = 200–250 nsec. This system is characterized by low afterglow, at the level for the Bi₄G₃O₁₂ scintillator. We have demonstrated the feasibility of using CdI₂:Pb as a scintillator for detecting α particles. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 75, No. 6, pp. 825–830, November–December, 2008.     

Crystal growth,luminescence and scintillation properties of Eu2+:CeBr3 crystals

Eu²⁺:CeBr₃ crystals were grown by vertical Bridgman growth method and slight aliovalent doping of Eu²⁺ in the CeBr₃ crystal did not change the crystal structure. The X-ray stimulated luminescence, photoluminescence, decay kinetics and scintillation properties were investigated at room temperature. The X-ray stimulated luminescence spectra exhibited wide broad emission bands from 3.54 eV to 2.95 eV in the Eu²⁺:CeBr₃ crystal with high content of 620 ppm of Eu²⁺, which were the overlap of the emission bands ascribed to 5d → 4f transition of Ce³⁺ and 4f⁶5 d¹ → 4f⁷ transition of Eu²⁺, respectively. When the content of Eu²⁺ was decreased to 70 ppm, another emission band centered at 2.29 eV was observed. The photoluminescence spectra showed the energy transfer from Ce³⁺ to Eu²⁺. This decreased the Ce³⁺ emission intensity but enhanced the Eu²⁺ emission intensity. The photoluminescence decay time of Ce³⁺ emission decreased from 14 ns to 10 ns when the content of Eu²⁺ increased from 70 ppm to 620 ppm. The decay time of the emission of 525 nm did not change with the excitation wavelength and Eu²⁺ content, which could be assigned to the excitons that were bound on Eu²⁺ related centers. The light output of the Eu:CeBr₃ crystal under the excitation of ²⁴¹Am radioactive source was less than 20.2% of Tl:NaI crystal.