ПРОВОДИМОСТЬ СРЕДНЕ Й ЧАСТИ КАНАЛА КОНДЕНСИРОВАННЫХ РА ЗРНДОВ

. , . . - , 500 10 000 30 500 . - , .     

Ferromagnetic resonance in thin cobalt films

The paper gives the results of measuring ferromagnetic resonance on thin cobalt films, vacuum deposited on unheated glass slides. The values of the (g-factor, the width of the curve, the effective stress and uniaxial induced anisotropy were determined as a function of the thickness of the film from measurements of the ferromagnetic absorption in a magnetic field normal and parallel to the surface of the film. Measurements were carried out on a frequency of 9200 MHz and on film thicknesses of 180 to 1800 Å. A qualitative explanation of the observed dependences is given.

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, . , , g-, , , . 9200 MHz 180–1800 Å. .

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The author thanks V. Kamberský and Z. Málek, C. Sc., for providing some of the cobalt films and for help in depositing and measuring the thicknesses, S. Kadeková and M. Polcarová for valuable advice in determining the structure of the films, J. Míová for carefully plotting the results of measurements and Z. Málek and O. tirand for carefully reading the paper and for valuable discussions.     

Two-barrier detector

The paper describes the principle of a detector with two opposite surface barriers and the experimental verification of its functioning. The detector permits double the effective depth to be attained on the material with a given bias voltage. The principle of opposite barriers also permits a reduction in the system of dE/dx andE detectors to one detector.

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. . dE/dx E .

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The authors thank A. Irra for carefully preparing the plates, K. Putz and J. imková for very effective help in measuring on the cyclotron and the members of of the cyclotron staff for their cooperation.     

КРУЧЕНИЕ ПРИЗМАТИЧЕ СКИХ СТЕРЖНЕЙ ШВЕЛЛЕ РНОГО ПОПЕРЕЧНОГО СЕЧЕНИЯ

- [3], [4], U(x, y) . - U(x, y) -, . B § 10 - . , - , - D, . - .     

Radiation losses in completely ionized plasma

The losses caused by bremsstahlung during electron-ion and electron-electron collisions in a completely ionized plasma (in Born's approximation) are calculated. The calculation can be carried out analytically for a sufficiently dilute plasma (plasma with infinitely large Debay-Hückel radius). This assumption is satisfied very well by the known classification to actual controlled thermonuclear reaction. A dependence of the formI=an ². (1+3/2), wherea=0·73×10^–16 MeV.cm³.sec^–1,n is the number of ions per cm³ and =kT/mc ², is determined for the amount of energy radiated from 1 cm³ of plasma per sec. In the relativistic temperature regionkTmc ² the influence of electron-electron collisions begins to predominate. A number of important results concerning radiation losses in relativistic plasma will be published in a later paper.

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, ( ). ( -). . , I=an ². (1+3/2), =0,73. 10^–16 MeVcm²s^–1,n — =kT/mc ². kTmc ² . , .

     

ИЗЛУЧЕНИЕ ЧЕРЕНКОВА ПРОСТРАНСТВЕННОГО З АРЯДА В ВОЛНОВОДАХ И В НЕОГР АНИЧЕННОЙ СРЕДЕ

, - e . -. , .     

Polarization of photo-luminescence of ZnS: Cu monocrystals

Different models of luminescence centres are discussed on the basis of measurements of the composition of ZnS monocrystal photo-luminescence in different polarizations and temperature dependence of the degree of polarization. Those of the models submitted by Birman, which assume the polarization to be due to the different force of the oscillators for transitions withEc andEc, or models assuming luminescence polarization to be due to the orientation of the luminescence centres, agree with the results of experiments, i.e. the temperature independence of the degree of polarization and the conformable spectral composition of both polarizations. It is also shown that measurements made up to now of the degree of polarization must be taken as orientational as a consequence of the depolarizing influence of the diffused rays of luminescence on its value.

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ZnS: Cu

ZnS , . , . . , , , E E, , . , , - .

     

Der Einfluss von Mikrosegregations-Substrukturen auf die Kritische Schubspannung und den Verfestigungskoeffizient von Zinkeinkristallen

Zusammenfassung Der Einflu\ von Mikrosegregations-Substrukturen auf das plastische Verhalten von Zinkeinkristallen entspricht den allgemeinen Erwartungen in der Weise, da\ die kritische Schubspannung mit wachsender Substrukturendichte zunimmt. Der Verfestigungskoeffizient _A nimmt hingegen mit wachsender Substrukturendichte ab. Dabei wird der Verfestigungskoeffizient vom Charakter der Substruktur viel empfindlicher beeinflu\t als die kritische Schubspannung. Es wird angenommen, da\ dieser Einflu\ durch unterschiedlichen Fremdstoffgehalt zustande kommt.

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, . , _A . , . , .

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Die Autoren danken Herrn Prof. M. Valouch, der die Durchführung dieser Arbeit ermöglicht hat. Herrn P. Kratochvíl sei an dieser Stelle für zahlreiche Diskussionen aufs herzlichste gedankt.     

On the electroluminescence of powdered zinc sulphide layers

The experimental study of the dependence of the electroluminescence brightness on the voltage confirms the correctness of the mechanism of electroluminescence, based on impact ionization in parts of the crystal where the electric field is concentrated. A study of the photoluminescent and electroluminescent spectra of phosphors containing two activators (copper and an element of rare earth) permits the determination of the magnitude of the volume of the crystal in which electroluminescence occurs. A study of the influence of the stored light sum on the brightness of electroluminescence and a study of the rate of growth of the variable and constant components of electroluminescence point to the fact that the excitation is transferred from the region of field concentration to the whole volume of the crystal.

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, . - , ( ), , . .

     

СЕРНИСТЫЙ ТЕЛЛУР — ПО ЛУПРОВОДИОЕ СОЕДИНЕ НИЕ

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Влияние сильного выс окочастотного поля на расслоение положи тельного столба постоянного тлеющег о разряда

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The influence of a strong high-frequency field on the stratification of the positive column of a D-C glow discharge

An experimental study is made of the damping of moving striations in a d-c glow discharge by a strong high-frequency field. The results of measurement are in agreement with existing conceptions on the production and mechanism of propagation of moving striations. Apart from the process of damping the paper also describes the standing stratification of the positive column of a d-c discharge as a result of a superposed high-frequency discharge.

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Bunching phenomena during electron injection into the betatron

Under favourable conditions electrons injected into the betatron give rise to high-frequency oscillations. An experimental investigation of the properties of the oscillations is presented, in which new experimental material is added to an earlier paper [1] and the hypothesis regarding the nature of the oscillations is corrected.The oscillations are due to azimuthal bunching of the injected or captured electrons. The bunching is caused by a regenerative amplification of space-charge density fluctuations. The amplification is produced by the negative mass instability mechanism theoretically investigated by Nielsen, Sessler and Symon [2] and Kolomenskij and Lebedev [3].Bunching of the injected electrons is the primary cause of the capture of electrons injected into a static or slowly varying magnetic field. Bunching of the captured electrons represents a limitation in the magnitude of the capturable charge.

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, I.

, , . , [1] . . . , [2] [3]. , . .

     

ПРИГОТОВЛЕНИЕ И ХАРА КТЕР ПОВЕРХНОСТИ ПЛАСТИНОК AgBr

AgBr . , .     

К ВОПРОСУ O КРИТИЧЕСКО Й ЧАСТОТЕ ПРИ ПРЕРЫВИСТОМ ОСВЕ ЩЕНИИ

c , c n , n AgBr. .     

Rigorous Spectral Analysis of the Metal–Insulator Transition in a Limit-Periodic Potential

We consider the limit-periodic Jacobi matrices associated with the real Julia sets of f (z)=z ²– for which [2, ) can be seen as the strength of the limit-periodic coefficients. The typical local spectral exponent of their spectral measures is shown to be a harmonic function in decreasing logarithmically from 1 to 0.     

Twisted Lie Group C*-Algebras as Strict Quantization

A nonzero 2-cocycle Z2(g, R) on the Lie algebra g of a compact Lie group G defines a twisted version of the Lie–Poisson structure on the dual Lie algebra g*, leading to a Poisson algebra C (g*()). Similarly, a multiplier c Z2(G, U(1)) on G which is smooth near the identity defines a twist in the convolution product on G, encoded by the twisted group C-algebra C*(G,c). Further to some superficial yet enlightening analogies between C (g*()) and C*(G,c), it is shown that the latter is a strict quantization of the former, where Plancks constant assumes values in (Z\{0})-1. This means that there exists a continuous field of C*-algebras, indexed by 0 (Z\{0})-1, for which A0= C0(g*) and A=C*(G,c) for 0, along with a cross-section of the field satisfying Diracs condition asymptotically relating the commutator in A to the Poisson bracket on C(g*()). Note that the quantization of does not occur for =0.     

Bemerkung über die Reziprozität beim Durchgang des Lichtes Durch Leitfähige Schichten

Zusammenfassung Im vorliegenden Artikel wird die Durchlässigkeit eines beliebigen Systems homogener oder inhomogener Schichten mit beliebiger Leitfähigkeit bei senkrechtem Einfall einer elektromagnetischen Welle untersucht. Es wird bewiesen, da\ das Verhältnis der Durch-lässigkeiten beim Auftreffen der Welle von der einen und von der anderen Seite lediglich von den Leitfähigkeiten der Medien auf beiden Seiten des Systems abhängt. Falls die Leitfähigkeiten beider Medien gleich sind, sind auch die Durchlässigkeiten in beiden Richtungen gleich.

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On the theory of permeability disaccommodation in an alternating field

Néel's theory of diffusion magnetic after-effect is used to show that the disaccommodation of the initial permeability in an alternating field of sufficiently high frequency is equal to the disaccommodation determined by the ballistic method.

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Refining of CdSb and preparation of CdSb single crystals by zone melting

CdSb single crystals were prepared by zone melting in a boat both with and without a seed crystal in a stream of pure hydrogen or in a sealed and evacuated tube. The zone moved with a velocity of 1–20 cm/hour. Zone melting in an evacuated tube was used to prepare CdSb single crystals of high purity containing 10¹⁵ acceptors/cm³ at room temperature. During zone refining the stoichiometry is damaged; the front part of the ingot is enriched by cadmium and the end of the ingot by antimony; the enrichment is of an order of several percent after 10 passages of the zone. In the middle part of the ingot the stoichiometric compound remains unchanged. CdSb single crystals grow even by directional cooling of the melt of the stoichiometric compound without a seed crystal.

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CdSb CdSb

CdSb 1–20 cm/, . CdSb CdSb , 10¹⁵ cm³ . ; , . . . CdSb .

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The author died 28. 5. 1961.     

ЛОКАЛЬНЫЕ КОЛЕБАНлЯ ДВУХАТОМНОЙ ЛлНЕЙНО Й ЦЕПОЧКл С ДЕФЕКТАМл

. n : , . npou u , n . n n npocm .