Transport and dielectric properties of thin polycrystalline CoO films

Transport and dielectric properties of polycrystalline CoO films were studied as functions of the applied field, frequency and temperature. TheI–V plots showed that the Poole-Frenkel field emission mechanism is responsible for conduction at fields>10⁵ V/cm. The ac conductivity σ(ω), the imaginary part of the dielectric constantε ₂, and tan δ plots as functions of frequency revealed three dispersion regions. The σ(ω) andε ₂ frequency dependence indicates a non-adiabatic hopping of charge carriers at low frequencies and adiabatic hopping at high frequencies. The activation energy of a dielectric oscillator is 0.15 eV. Work supported by the Office of Naval Research.     

Influence of γ irradiation on the electrical conductivity and dielectric properties of β TlInS2 in the temperature range of the incommensurate phase

The influence of γ irradiation on the electrical conductivity σ, the dielectric permittivity ɛ, and the dielectric loss tangent tanδ of β-TlInS₂ crystals is investigated in the temperature range of the incommensurate phase. It is established that γ irradiation lowers the values of ɛ and tanδ over the entire investigated temperature range and decreases the maxima of the σ(T) and tanδ(T) curves in the vicinity of the transition temperature T _c, but does not alter the transition temperature. Fiz. Tverd. Tela (St. Petersburg) 39, 1088–1090 (May 1997)     

Dielectric properties and phase transitions in crystals of TlInS x Se2 − x solid solutions

This paper reports on a study of the dielectric permittivity and electrical conductivity of single-crystal TlInS _x Se_{2 − x} solid solutions as functions of temperature and composition. It has been found that the dielectric permittivity ɛ and electrical conductivity σ decrease with increasing x and increase with growing temperature. The temperature dependences ɛ = f(T) and σ = f(T) for TlInS _x Se_{2 − x} crystals have been demonstrated to reveal anomalies in the form of maxima, which suggests that these crystals undergo phase transitions. The temperatures of the phase transitions increase with increasing x.     

Conductivity of ionic crystals when they are irradiated by picosecond electron beams

This paper discusses the pulsed electron conductivity σ of KCl, KBr, and NaCl crystals when they are excited by an electron beam (0.2 MeV, 50 ps) with current densities in the interval j=(30–10⁴) A/cm². It is shown that the lifetime of the electrons in the conduction band is τ≪100 ps. To explain the experimental σ(j) dependences, a model is proposed that includes electron capture by structural defects and stable radiation defects at low excitation densities and electron capture predominantly by unstable radiation defects generated by the excitation pulse at high excitation densities. Fiz. Tverd. Tela (St. Petersburg) 41, 1200–1203 (July 1999)     

Zero bias anomaly in the density of states of low-dimensional metals

We consider the effect of Coulomb interactions on the average density of states (DOS) of disordered low-dimensional metals for temperatures T and frequencies ω smaller than the inverse elastic life-time 1/τ. Using the fact that long-range Coulomb interactions in two dimensions (2d) generate ln²-singularities in the DOS ν(ω) but only ln-singularities in the conductivity σ(ω), we can re-sum the most singular contributions to the average DOS via a simple gauge-transformation. If σ(ω) > 0, then a metallic Coulomb gapν(ω) ∝ |ω|/e ⁴ appears in the DOS at T = 0 for frequencies below a certain crossover frequency Ω ₂ which depends on the value of the DC conductivity σ(0). Here, - e is the charge of the electron. Naively adopting the same procedure to calculate the DOS in quasi 1d metals, we find ν(ω) ∝ (|ω|/Ω ₁)^1/2exp(- Ω ₁/|ω|) at T = 0, where Ω ₁ is some interaction-dependent frequency scale. However, we argue that in quasi 1d the above gauge-transformation method is on less firm grounds than in 2d. We also discuss the behavior of the DOS at finite temperatures and give numerical results for the expected tunneling conductance that can be compared with experiments. Received 28 August 2001 / Received in final form 28 January 2002 Published online 9 July 2002     

Electrical conductivity and dielectric constant of A-type Nd2O3

The measurements of electrical conductivity (σ) from 300 to 1200 K and dielectric constant (ε′) from 4·2 to 1200 K of A-type Nd₂O₂ pellets are reported here. Electrical conductivity (σ) data can be explained in terms of impurity. The dielectric constant (ε′) increases slowly up to 500 K as is expected for ionic solids. The increase ofε′ becomes much faster above 500 K, which is attributed to space charge polarization of thermally generated charge carriers.     

Effect of γ irradiation on the low-temperature electrical conductivity and dielectric properties of TlGaSe2 crystals

Electrical conductivity and dielectric properties of single-crystal TlGaSe₂ have been studied as a function of γ irradiation dose in the 100–280 K range including the existence of an incommensurate phase. Anomalies in the form of maxima have been observed in the σ=f(T), tan δ=f(T), and ɛ=f(T) curves at the points of transition from the paraphase to incommensurate (IC) phase, T _i, and from the IC to commensurate phase, T _c. The increase in the quantities σ, tan δ, and ɛ observed initially with increasing irradiation dose is followed by their strong decrease and disappearance of the anomalies. It has been established that γ irradiation does not affect the phase transition temperatures T _i and T _c. Fiz. Tverd. Tela (St. Petersburg) 40, 1328–1331 (July 1998)     

Ionic conductivity of isostructural crystals of the superionic conductors Li3Fe2(PO4)4 and Li3Sc2(PO4)3

The results of measurements of the ionic conductivity σ in Li₃M₂(PO₄)₃ (M=Fe, Sc) single crystals along various crystallographic directions are analyzed. Possible causes of the different behavior of σ in the isostructural crystals are discussed: a jump of the conductivity in the transition to the superionic phase in Li₃Sc₂(PO₄)₃ and its absence in Li₃Fe₂(PO₄)₃; the existence of a conductivity maximum in different crystallographic directions (along the c axis in Li₃Sc₂(PO₄)₃ and along the a axis in Li₃Fe₂(PO₄)₃). Fiz. Tverd. Tela (St. Petersburg) 39, 83–86 (January 1997)     

Frequency dependent magnetoconductivity and conductivity study in Ni-dispersed silica nano-composite produced by sol-gel technique

The low frequency (20 Hz to 1 MHz) ac conductivity and magnetoconductivity behaviour of ceramic nanocomposite (Ni-SiO₂) at low temperature down to 77 K are reported. The frequency dependent conductivity followed the power law, σ(ω) ∝ ω ^s . The fractional exponent s is a function of temperature and was found to increase with increasing temperature. This type of variation may be attributed to small polaron hopping. A peak present in the loss tangent indicates the presence of a Debye relaxation process. The magnetoconductivity of the samples is positive, which strongly depends on frequency. A firm theoretical explanation of frequency dependent magnetoconductivity is still lacking.     

Mechanism of giant magnetoresistance in intermetallic compounds of rare-earth ions and actinides

Giant positive or negative magnetoresistance is calculated in a band model. The spectra of the band electrons in a two-sublattice antiferromagnetic intermetallic compound depend on the antiferromagnetism vector L(T,H). The metamagnetic transition to the ferromagnetic phase is accompanied by splitting with respect to the spin σ, displacement of the energy bands, and a decrease in the effective masses of the band electrons. This mechanism of giant negative magnetoresistance is also accompanied by an increase in the relaxation time τ_jσ. Scattering by chemical-bond fluctuations is considered as the main relaxation mechanism. Giant positive magnetoresistance results from a four-subband model of 4f and 5f intermetallic compounds. The electron effective masses m _jσ(J _jT ) of the (j,σ) bands increase with the mean angular momentum J _1T (T,H) of an ion in the jth sublattice of 4(5)f ions. The thermodynamics of such a four-sublattice model, the nonlinear magnetization and magnetoresistance curves, and the nonmonotonic dependence of the specific heat C _m(T,H) on the field H are calculated. Fiz. Tverd. Tela (St. Petersburg) 39, 1806–1814 (October 1997)     

Electrical properties,equivalent circuit,and dielectric relaxation studies on [(C<Subscript>3</Subscript>H<Subscript>7</Subscript>)<Subscript>4</Subscript>N]<Subscript>2</Subscript>Cd<Subscript>2</Subscript>Cl<Subscript>6</Subscript> polycrystalline

The Ac electrical conductivity and the dielectric relaxation properties of the [(C₃H₇)₄N]₂Cd₂Cl₆ polycrystalline sample have been investigated by means of impedance spectroscopy measurements over a wide range of frequencies and temperatures, 209 Hz–5 MHz and 361–418 K, respectively. The purpose is to make a difference between the electrical and dielectric properties of the polycrystalline sample and single crystal. Besides, a detailed analysis of the impedance spectrum suggests that the electrical properties of the material are strongly temperature-dependent. Plots of (Z" versus Z') are well fitted to an equivalent circuit model consisting of a series combination of grains and grains boundary elements. Moreover, the temperature dependence of the electrical conductivity in the different phases follows the Arrhenius law and the frequency dependence of σ (ω) follows the Jonscher’s universal dynamic law. Furthermore, the modulus plots can be characterized by full width at half height or in terms of a nonexperiential decay function φ(t) = exp(t/t)^β. Finally, the imaginary part of the permittivity constant is analyzed with the Cole–Cole formalism.     

Effect of ionizing radiation on the dielectric characteristics of TlInSe<Subscript>2</Subscript> and TlGaTe<Subscript>2</Subscript> single crystals

The temperature dependences of the electrical conductivity and the permittivity of TlInSe₂ and TlGaTe₂ crystals unirradiated and irradiated with 4-MeV electrons at a doze of 10¹⁶ cm⁻² have been investigated. It has been established that electron irradiation leads to a decrease in the electrical conductivity σ and the permittivity ɛ over the entire temperature range under study (90–320 K). It has been revealed that the TlInSe₂ and TlGaTe₂ single crystals undergo a sequence of phase transitions characteristic of crystals of this type, which manifest themselves as anomalies in the temperature dependences σ = f(T) and ɛ = f(T). Electron irradiation at a doze of 10¹⁶ cm⁻² does not affect the phase transition temperatures of the crystals under investigation.     

Dielectric properties of BiMg1/2Ti1/2O3 and BiMg1/2Zr1/2O3 perovskite ceramics with elimination of the contribution for direct current conductivity

A technique for analysis of the electric modulus spectrum of dielectric ceramics based on the elimination of the direct current conductivity (σ _dc ) contribution has been developed. Expressions are given for the real (M′ _ac ) and imaginary (M′′ _ac ) parts of the complex electrical modulus related only to the dielectric polarization and not containing the contribution of σ _dc . The frequency dependence of M′′ _ac and the M′′ _ac – M′ _ac diagram for BiMg_1/2Ti_1/2O₃ and BiMg_1/2Zr_1/2O₃ perovskite ceramics are analyzed.     

Evaluated cross sections of the σ(γ, nX) and σ(γ, 2nX) reactions on 112, 114, 116, 117, 118, 119, 120, 122, 124Sn isotopes

A combined analysis of experimental data on total and partial photoneutron reaction cross sections, obtained using bremsstrahlung γ-radiation and quasi-monoenergetic annihilation photon beams, was performed for nine Sn isotopes. The partial reactions σ^eval(γ, nX) and σ^eval(γ, 2nX) cross sections were evaluated using an approach free of the shortcomings of experimental neutron multiplicity sorting methods. This approach involves calculations within the photonuclear reaction model, based on Fermi gas densities and considering the effects of nucleus deformation, the isospin splitting of its giant dipole resonance (GDR), and experimental data on the total photoneutron cross sections σ^exp(γ, xn) = σ^exp(γ, nX) + 2σ^exp(γ, 2nX) = σ^exp(γ, n) + σ^exp(γ, np) + … + 2σ^exp(γ, 2n) + 2σ^exp(γ, 2np) + …. The evaluated σ^eval(γ, nX) and σ^eval(γ, 2nX) reactions cross sections were obtained using the introduced transition multiplicity functions F ^theor = σ^theor(γ, 2nX)/σ^theor(γ, xn) = σ^theor(γ, 2nX)/[σ^theor(γ, nX) + 2σ^theor(γ, 2nX) + …]; and σ^eval.(γ, 2nX) = F ^theor.σ^exp.(γ, xn) = σ^eval(γ, nX) = (1 − 2F ^theor)σ^exp(γ, xn). The evaluated partial reaction cross sections were used to assess the total photoneutron reaction cross sections σ^eval(γ, sn) = σ^eval(γ, nX) + σ^eval(γ, 2nX) + … as functions of the mass number A. The GDR features of ^{112, 114, 116, 117, 118, 119, 120, 122, 124}Sn isotopes were studied and are discussed here.     

Reciprocity relations for the effective electrical conductivity of randomly inhomogeneous media in the fractal regime

An exact relation for the realization-averaged effective conductivities in the fractal region is found for two-dimensional randomly inhomogeneous media. It has the form {σ _e (τ,L)~× {1/σ _e (−τ,L)~⁻¹=σ _e ² (τ=0, L≫ξ), where ξ is the correlation length (the self-averaging scale), L is the size of the system, τ=(p-p _c )/p _c , and p _c is the percolation threshold. For L≫ ξ, the system is self-averaged, and the relation transforms into the Dykhne reciprocity relation, A. M. Dykhne, Zh. éksp. Teor. Fiz. 59, 110 (1970) [Sov. Phys. JETP 32, 63 (1971)] σ _e (τ)σ _e (−τ])=σ _e ² (τ=0)= σ ₁ σ ₂. A similar relation is obtained for media with an exponentially broad distribution of local conductivities, as well as for individual realizations of some deterministic structures. Zh. éksp. Teor. Fiz. 113, 1484–1490 (April 1998)     

Quasi-one dimensional electrical conductivity and thermoelectric power studies on a discotic liquid crystal

We have studied the electrical conductivity of well aligned samples of hexahexylthiotriphenylene (HHTT) in the pure as well as doped states. The dopant used was a small concentration (0.62 mole %) of the electron acceptor trinitrofluorenone (TNF). In the columnar phases, doping causes the AC(1 kHz) conductivity along the columnar axis (σ _‖) to increase by a factor of 10⁷ or more relative to that in undoped samples; σ _‖ attains a value of 10⁻²S/m, which was the maximum measurable limit of our experimental set up. On the other hand, in the isotropic phase doping makes hardly any difference to the conductivity. The frequency dependence of the conductivity has been investigated. The DC conductivity of doped samples exhibits an enormous anisotropy, σ _‖/σ _⊥ ≥ 10¹⁰, which is 7 orders higher than that reported for any liquid crystalline system, and, to our knowledge, the largest observed in an organic conductor. We also report the first thermoelectric power studies on these ‘molecular wires’. The sign of the thermoelectric power is in conformity with the expected nature of the charge carriers, namely, holes.     

New data for the 197Au(γ, nX) and 197Au(γ, 2nX) reaction cross sections

The results from experimental and theoretical studies of the total and partial cross sections of photoneutron reactions on the ¹⁹⁷Au isotope were analyzed. The cross sections for reactions σ(γ, nX) = σ(γ, n) + σ(γ, np) + … + σ(γ, 2nX) = σ(γ, 2n) + σ(γ, 2np) + … were evaluated in the energy range 7 ≤ E _γ ≤ 30 MeV using an approach free of the shortcomings of experimental photoneutron multiplicity sorting methods. The total photoneutron reaction cross sections σ^exp(γ, xn) = σ^exp(γ, nX) + 2σ^exp(γ, 2nX) + … = σ^exp(γ, n) + σ^exp(γ, np) + 2σ^exp(γ, 2n) + 2σ^exp(γ, 2np) + … were used as the initial experimental data. The contributions from the cross sections σ(γ, nX) and σ(γ, 2nX) to the cross sections σ^exp(γ, xn) were separated using the multiplicity transition functions F ₁ ^theor = σ^theor(γ, 1nX)/σ^theor(γ, xn) and F ₂ ^theor = σ^theor(γ, 2nX)/σ^theor(γ, xn), calculated within an updated version of the pre-equilibrium model of photonuclear reactions. New evaluated data for both partial reaction cross sections, i.e., σ^eval (γ, 1nX) = F ₁ ^theorσ^exp(γ, xn) and σ^eval(γ, 2nX) = F ₂ ^theorσ^exp(γ, xn), were obtained. The cross sections σeval(γ, nX) and σ^eval.(γ, 2nX) evaluated using the theoretically calculated functions F _1,2^theor are consistent with the Livermore data, but substantially contradict the Saclay data.     

Onset of a nonoptimal hopping regime for ac conductivity in amorphous gallium antimonide

A possible explanation has been found for the typical discrepancy between the parameters of localized states as determined from the static and dynamic hopping conductivities in tetrahedral amorphous semiconductors. It is shown for the example of a-GaSb that the Mott hopping length R _opt, the correlation length for nonoptimal hops L _T , and the ac hopping length R _ω are related as R _opt <L _T <R _ω , as a result of which the Mott law holds for the dc conductivity and the Zvyagin regime of nonoptimal hops holds for the ac conductivity σ(ω). The observed value of σ(ω) is two orders of magnitude lower than the conductivity calculated by the Austin-Mott formula for the parameters of localized states found from dc measurements. A model that quantitatively describes the static and dynamic conductivity of a-GaSb with the aid of a single set of parameters characterizing the Miller-Abrahams resistor network is proposed. Pis’ma Zh. éksp. Teor. Fiz. 65, No. 4, 322–327 (25 February 1997)     

Semiclassical theory of the Coulomb anomaly

An effective action approach for the problem of Coulomb blocking of tunneling is discussed. The method is applied to the strong-coupling problem arising near zero bias, where perturbation theory diverges. We find an instanton for the electrodynamics in imaginary time, and express the anomaly in terms of the exact conductivity of the system σ(ω,q) and the exact interaction. Pis’ma Zh. éksp. Teor. Fiz. 66, No. 3, 200–205 (10 August 1997) Published in English in the original Russian journal. Edited by Steve Torstveit.     

Search for the NN → 6q phase transition in the np-polarized measurements at T kin = 1–6 GeV

The measurements of np-spin observables at 0° have been performed for the first time on the Delta-Sigma experimental facility of LHE JINR up to P _n = 4.5 GeV/c using the monochromatic neutron beam. They include detailed measurements of the Δσ _L(np) spin differences and the study of the np → pn elastic charge-exchange process. In the Δσ _L(np) and −Δσ _L(I = 0) energy dependencies over the energy region T_kin = 1.2–3.7 GeV the peculiarity at 1.8 GeV was observed. Such energy behavior was predicted by the QCD approach as a signal of the NN → 6q phase transition. For the exhaustive investigation of this effect it is necessary to measure the energy dependence of the complete set of np observables with both longitudinal (L) and transverse (T) polarizations of the neutron beam and proton target. This will allow Direct Reconstruction of all three NN forward Scattering Amplitudes (DRSA) to be performed, and the observed peculiarity to be checked around T_kin = 1.8 GeV and at the higher energies using the Argand diagrams method.