Laser dilatometer

A laser dilatometer is described which uses light interference to measure dimensional changes induced by temperature in objects. The specimen to be measured is in a vacuum. The temperature range is from 20 to 800° C. Heating is done in a two-zone furnace with a temperature control ensuring an accuracy in maintaining a constant temperature of λ01°C. A.5mWTEM₀₀ He - Ne laser is utilized. The resolution of measurement is λ/50. The basic principles of operation are described and block diagrams of the main units of the dilatometer are given.     

Studies on the preparation and ethanol gas sensing properties of spinel Zn0.6Mn0.4Fe2O4 nanomaterials

Zn_1−xMn_xFe₂O₄ (x = 0, 0.2 and 0.4) nanomaterials were synthesized by sol–gel citrate method and studied structural and gas sensing properties. The structural characteristics of synthesized nanomaterials were studied by X-ray diffraction measurement (XRD) and transmission electron microscope (TEM). The results revealed that the particle size is in the range of 30–35 nm for Mn–Zn ferrite with good crystallinity. The gas sensing properties were studied towards reducing gases like LPG, CH_4, CO and ethanol and it is observed that Mn–Zn ferrite shows high response to ethanol at relatively lower operating temperature. The Zn_0.6Mn_0.4Fe₂O₄ nanomaterial shows better sensitivity towards ethanol at an operating temperature 300 °C. Incorporation of 1.5 wt.% Pd improved the sensitivity, selectivity, response time and reduced the operating temperature from 300 °C to 230 °C for ethanol sensor. The response time of 200 ppm ethanol in air is about 10s.     

Effect of annealing temperature on microstructure, optical and electrical properties of sputtered Ba0.9Sr0.1TiO3 thin films

Ba_0.9Sr_0.1TiO₃ (BST) thin films were deposited on fused quartz and Pt/TiN/Si₃N₄/Si substrates by radio frequency magnetron sputtering technique. Microstructure and chemical bonding states of the BST films annealed at 700 °C were characterized by field emission scanning electron microscopy, X-ray photoelectron spectroscopy, glancing angle X-ray diffraction and Raman spectrum. Optical constants including refractive indices, extinction coefficients and bandgap energies of the as-deposited BST film and the BST films annealed at 650, 700 and 750 °C, respectively, were determined from transmittance spectra by envelope method and Tauc relation. Dielectric constant and remnant polarization for the BST films increase with increasing annealing temperature. Leakage current density-applied voltage (J–V) data indicate that the dominant conduction mechanism for all the BST capacitors is the interface-controlled Schottky emission under the conditions of 14 V < V < 30 V and −30 V < V < −14 V. Furthermore, the inequipotential J–V characteristics for the BST films annealed at various temperatures are mainly attributed to the combined effects of the different thermal histories, relaxed stresses and strains, and varied Schottky barrier heights in the BST/Pt and Pt/BST interfaces.     

Investigation of the polyetherketone guest–host DR1/PEK-c polymer films by real-time monitoring of the second-harmonic generation

The real-time monitoring of the second-harmonic generation (SHG) was used to optimize the poling condition and to study the nonlinear optical (NLO) properties of the polyetherketone (PEK-c) guest–host polymer films. The high second-order NLO coefficient χ₃₃⁽²⁾=11.02 pm/v measured at 1.064 μm was achieved when the weight percent of DR1 guest in the polymer system is 20%. The NLO activity of the poled DR1/PEK-c polymer film can maintain more than 80% of its initial value when temperature is under 100°C, and the normalized second-order NLO coefficient can maintain more than 85% after 2400 s at 80°C.     

Synthesis, phase and microstructure characteristics of Pb(Zr0.52Ti0.48)O3–(Bi3.25La0.75)Ti3O12 ceramics

Ceramics with formula (1 − x)Pb(Zr_0.52Ti_0.48)O₃–x(Bi_3.25La_0.75)Ti₃O₁₂ (when x = 0, 0.1, 0.3, 0.5, 0.7, 0.9 and 1.0) were prepared by a solid-state mixed-oxide method and sintered at temperatures between 950 °C and 1250 °C. It was found that the optimum sintering temperature was 1150 °C at which all the samples had densities at least 95% of theoretical values. Phase analysis using X-ray diffraction indicated the existence of BLT- as well as PZT-based solid solutions with corresponding lattice distortion. Scanning electron micrographs of ceramic surfaces showed a plate-like structure in BLT-rich phase while the typical grain structure was observed for PZT-rich phase. The grain sizes of both pure BLT and PZT ceramics were found to decrease as the relative amount of the other phase increased. This study suggested that tailoring of properties of this PZT–BLT system was possible especially on the BLT-rich side due to its large solubility limit.     

The microwave spectrum of phosphabutadiyne, H---CC---CP

A detailed rotational analysis of the microwave spectrum between 26.5 and 40 GHz of phosphaethene, CH₂=PH, has been carried out. This molecule is the simplest member of a new class of unstable molecules—the phosphaalkenes. The species can be produced by pyrolysis of (CH₃)₂PH, CH₃PH₂ and also somewhat more efficiently from Si(CH₃)₃CH₂PH₂. Full first-order centrifugal distortion analyses have been carried out for both ¹²CH₂³¹PH and ¹²CH₂³¹PD yielding: A₀ = 138 503.20(21), B₀ = 16 418.105(26), and C₀ = 14 649.084(28) MHz for ¹²CH₂³¹PH. The 1₀₁-0₀₀ μ_A lines have also been detected for ¹³CH₂PH, cis-CDHPH and trans-CHDPH. These data have enabled an accurate structure determination to be carried out which indicates: r(H_cC) = 1.09 ± 0.015 Å, (H_cCP) = 124.4 ± 0.8°; r(H_tC) = 1.09 ± 0.015 Å, (H_tCP) = 118.4 ± 1.2°; r(CP) = 1.673 ± 0.002 Å, (HCH) = 117.2 ± 1.2°; r(PH) = 1.420 ± 0.006 Å, (CPH) = 97.4 ± 0.4°. The dipole moment components have been determined as μ_A = 0.731 (2), μ_B = 0.470 (3), μ = 0.869 (3) D for CH₂PH; μ_A = 0.710 (2), μ_B = 0.509 (10), μ = 0.874 (7) D for CH₂PD.     

Microwave spectrum, structure, and dipole moment of the trans-trans isomer of methylpropylether

Microwave spectra of the trans-trans (TT) isomer of methylpropylether and its 12 isotopically substituted species were measured. The r_s structure of this isomer was determined from the observed moments of inertia. Structural parameters of this isomer were roughly equal to those of the reported r_s structures of trans-ethylmethylether and propane. Dipole moments of the TT isomer for the normal and two deuterated species were determined by Stark-effect measurements. For the normal species, the dipole moment was μ_a = 0.082 ± 0.010, μ_b = 1.104 ± 0.013, and μ_total = 1.107 ± 0.013 D making angles of 4°17′ with the b-inertial axis, of 6°7′ with the bisector of the COC angle. The barrier to internal rotation of the CH₃C group was calculated to be 3300 ± 60 cal/mole from A-A splittings of the spectra in the CH₃C excited torsional state.     

Angular distribution of intensity of reflected radiation investigations of the influence of CO2 laser treatment on optical properties of hydrogenated amorphous silicon

Thin films of hydrogenated amorphous silicon (a-Si:H) were annealed using CO₂ laser radiation (λ=10.6 μm). Changes of optical properties of the treated a-Si:H were investigated using optical transmittance spectroscopy and the angular distribution of intensity of reflected radiation (ADIRR). The CO₂ laser annealing influences the spectral characteristics of the real part of refractive index n and absorption coefficient α of light in a-Si:H. This treatment increases the n and α values as well as the Urbach energy of a-Si:H. Simultaneously it decreases the optical energy gap of this material. The changes of optical parameters at the interfaces of a-Si:H–glass substrate and a-Si:H–air were established.     

A model study of quark-number susceptibility at finite chemical potential and temperature

In this Letter, we try to give a direct method for calculating the quark-number susceptibility (QNS) at finite chemical potential and temperature. In our approach the QNS is given by a formula which solely involves (the dressed quark propagator at finite chemical potential μ and temperature T). From this the QNS at finite chemical potential and temperature is calculated in the framework of rainbow-ladder approximation of the Dyson–Schwinger approach using the meromorphic quark propagator proposed in [M.S. Bhagwat, M.A. Pichowsky, P.C. Tandy, Phys. Rev. D 67 (2003) 054019]. It is found that the QNS χ(μ,T) has a singularity when μ comes close to a critical value μ₀, and the susceptibility as a function of T becomes discontinuous at some values of T when μ is near μ₀. At high temperature the QNS approaches the ideal quark gas result, while at very small temperature (T<40 MeV) the susceptibility equals zero. For all values of μ we studied, the susceptibility shows a rapid increase near T=120–140 MeV, which could be regarded as the signal of a crossover.     

Effect of surface roughness of TiO2 films on short-circuit current density of photoelectrochemical cell of ITO/TiO2/PVC-LiClO4/graphite

This paper reports the effect of surface topography of titanium dioxide films on short-circuit current density of photoelectrochemical solar cell of ITO/TiO₂/PVC-LiCLO₄/graphite. The films were deposited onto ITO-covered glass substrate by screen-printing technique. The films were tempered at 300 °C, 350 °C, 400 °C, 450 °C and 500 °C for 30 min to burn out the organic parts and to achieve the films with porous structure. The surface roughness of the films were studied using scanning electron microscope (SEM). Current–voltage relationship of the devices were characterized in dark at room temperature and under illumination of 100 mW cm⁻² light from tungsten halogen lamp at 50 °C. The device utilising the TiO₂ film annealed at 400 °C produces the highest short-circuit current density and open-circuit voltage as it posses the smoothest surface topography with the electrolyte. The short-circuit current density and open-circuit voltage of the devices increase with the decreasing grain size of the TiO₂ films. The short-circuit current density and open-circuit voltage are 0.6 μA/cm² and 109 mV respectively.     

Study of the structure and refractive parameters of diethylamine and triethylamine

The refractive index (n) and thermal coefficient of the refractive index (dn/dt) are measured at four wavelengths for the diethylamine and triethylamine. The measurements are carried out using the Bellingham+Stanley model 60/ED high-accuracy Abbe refractometer. The optical permittivity (ε) and its variation with temperature are calculated. Applying the Cauchy equation, the following refractive properties are obtained: the optical dispersion dn/dλ, the dielectric dispersion dε/dλ, the variation of -dn/dT, dε/dT, as a function of wavelength (λ), and Cauchy's constants against temperature. Additionally, molar refractivity versus temperature and wavelength are determined.     

A new method for increasing the laser damage threshold of metal mirrors

In order to increase the damage threshold of metal mirrors we propose to create a special structure on the surface of the mirrors (“photonic surface”). This structure must have the period about λ/2 and will suppress propagation of surface plasmons with the frequency ω₀=2πc/λ along the surface. This structure will also slightly increase the heat removal from the mirror’s surface by the excitation of the thermostimulated plasmon emission from the surface. The heat removal from the surface is estimated and possible implementation of this approach for use with CO₂-lasers (λ=10.6 μm) and Nd-YAG-lasers (λ=1.06 μm) is analyzed.     

GaN/AlN quantum dot photodetectors at 1.3–1.5 μm

We have demonstrated GaN/AlN quantum dots (QD) photodetectors, relying on intraband absorption and in-plane carrier transport in the wetting layer. The devices operate at room temperature in the wavelength range 1.3–1.5 μm. Samples with 20 periods of Si-doped GaN QD layers, separated by 3 nm-thick AlN barriers, have been grown by plasma-assisted molecular-beam epitaxy on an AlN buffer on a c-sapphire substrate. Self-organized dots are formed by the deposition of 5 monolayers of GaN under nitrogen-rich conditions. The dot height is 1.2±0.6 to 1.3±0.6 nm and the dot density is in the range 10¹¹–10¹² cm⁻². Two ohmic contacts were deposited on the sample surface and annealed in order to contact the buried QD layers. The dots exhibit TM polarized absorption linked to the s–p_z transition. The photocurrent at 300 K is slightly blue-shifted with respect to the s–p_z intraband absorption. The responsivity increases exponentially with temperature and reaches a record value of 10 mA/W at 300 K for detectors with interdigitated contacts.     

Measurement of thickness of a thin film by means of laser interference at many incident angles

An optical method for directly measuring the thickness of a thin transparent film has been proposed by means of multi-wave laser interference at many incident angles, and confirmed experimentally by means of equipment made on an experimental basis. Two methods are available: one can be used when an index of refraction of the film, a wavelength λ, and two successive angles of incidence at which the sinusoidal light intensity has minimum values, are known (Method I), and another can be used without an index of film refraction when three successive angles of incidence and a wavelength are known (Method II). The smallest measurable thickness is 1.43λ for Method I, and 2.5λ for Method II. The largest measurable thickness is about 100λ for both methods. The measurement error by means of numerical calculation is Δh/h−1.01×10⁻², and that obtained experimentally with an angular resolution of incident light of 0.3° is Δh/h7×10⁻² for Method I. The refractive index can also be measured by means of Method II.     

One- and two-dimensional C–H/N–H dipolar correlation experiments under fast magic-angle spinning for determining the peptide dihedral angle φ

A recently proposed ¹³C–¹H recoupling sequence operative under fast magic-angle spinning (MAS) [K. Takegoshi, T. Terao, Solid State Nucl. Magn. Reson. 13 (1999) 203–212.] is applied to observe ¹³C–¹H and ¹⁵N–¹H dipolar powder patterns in the ¹H–¹⁵N–¹³C–¹H system of a peptide bond. Both patterns are correlated by ¹⁵N-to-¹³C cross polarization to observe one- or two-dimensional (1D or 2D) correlation spectra, which can be simulated by using a simple analytical expression to determine the H–N–C–H dihedral angle. The 1D and 2D experiments were applied to N-acetyl[1,2-¹³C,¹⁵N] -valine, and the peptide φ angle was determined with high precision by the 2D experiment to be ±155.0°±1.2°. The positive one is in good agreement with the X-ray value of 154°±5°. The 1D experiment provided the value of φ=±156.0°±0.8°.     

Electrical conductivity of Ag/Na ion-exchanged titanosilicate glasses

The Ag₂O–TiO₂–SiO₂ glasses were prepared by Ag⁺/Na⁺ ion-exchange method from Na₂O–TiO₂–SiO₂ glasses at 380–450 °C below their glass transition temperatures (T_g), and their electrical conductivities were investigated as functions of TiO₂ content and the ion-exchange ratio (Ag/(Ag+Na)). In a series of glasses 20R₂O·xTiO₂·(80−x)SiO₂ with x=10, 20, 30 and 40 in mol%, the electrical conductivities at 200 °C of the fully ion-exchanged glasses of R=Ag were in the order of 10⁻⁵ or 10⁻⁴ S cm⁻¹ and were 1 or 2 orders of magnitude higher than those of the initial glasses of R=Na. The glass of x=30 exhibited the highest increase of conductivity from 3.8×10⁻⁷ to 1.3×10⁻⁴ S cm⁻¹ at 200 °C by Ag⁺/Na⁺ ion exchange among them. When the ion-exchange ratio was changed in 20R₂O·30TiO₂·50SiO₂ system, the electrical conductivity at 200 °C exhibited a minimum value of 7.6×10⁻⁸ S cm⁻¹ around Ag/(Ag+Na)=0.3 and increased steeply in the region of Ag/(Ag+Na)=0.5–1.0. When the ion-exchange temperature was changed from 450 to 400 °C, the conductivity of the ion-exchanged glass of x=30 decreased. The infrared spectroscopy measurement revealed that the ion-exchange temperature of 450 °C induced a structural change in the glass of x=30. The T_g of the fully ion-exchanged glass of x=30 was 498 °C. It was suggested that the incorporated silver ions changed the average coordination number of titanium ions to form higher ion-conducting pathway and resulted in high conductivity in the titanosilicate glasses.     

The accuracies of photometric, polarimetric and ellipsometric methods for the optical constants of thin films

The inherent accuracies of various techniques for determining the optical constants of thin films have been assessed by computing the errors produced in n and k by known experimental errors in the optical functions being measured. The results are presented as arrays of error parallelograms in the n–k plane covering d/λ from 0.001 to 0.20 and θ from 5° to 85°.The largest regions of accuracy, in the form of annular quadrants, were obtained using the mixed photometric and polarimetric functions at small angles of incidence. Ellipsometry gives similar results at large angles of incidence but for photometry and for polarimetry the accurate regions were in the form of two lobes.The effects of errors in x and θ were also considered.     

Thermal annealing effects on I–V–T characteristics of sputtered Cr/n-GaAs diodes

Sputtered Cr/n-GaAs Schottky diodes have been prepared and annealed at 200 and 400 °C. The current–voltage (I–V) characteristics of the as-deposited and annealed diodes have been measured in the temperature range of 60–320 K with steps of 20 K. The effect of thermal annealing on the temperature-dependent I–V characteristics of the diodes has been investigated experimentally. The ideality factor and barrier height (BH) values for 400 °C annealed diode approximately remain unchanged from 120 to 320 K, and those of the as-deposited sample from 160 to 320 K. The departures from ideality at low temperatures have been ascribed to the lateral fluctuations of the BH. The BH values of 0.61 and 0.74 eV for the as-deposited and 400 °C annealed diodes were obtained at room temperature, respectively. A Richardson constant value of 9.83 A cm⁻² K⁻² for 400 °C annealed Schottky diode, which is in close agreement with the known value of 8.16 A cm⁻² K⁻² for n-type GaAs. Furthermore, T₀ anomaly values of 15.52, 10.68 and 5.35 for the as-deposited and 200 and 400 °C annealed diodes were obtained from the nT versus T plots. Thus, it has been seen that the interface structure and quality improve by the thermal annealing at 400 °C.     

Influence of relative refractive index on the efficiency of total internal reflection diffraction gratings. Part I. s-Polarization

The influence of the relative refractive index on the efficiency of chromium diffraction gratings, working in total internal reflection with s-polarized light, is investigated. Calibrated aqueous solutions of sodium chloride with exactly known refractive indices at λ = 632·8 nm are used. The experimental results are explained by the modified characteristic wave method. A good quantitative agreement between theory and experiment within the measurement error is ensured for small changes (up to c. 10^-2) in the relative refractive index.     

Magnetische streufelder über den bereichen sehr genau orientierter Ni-einkristalloberflächen zwischen 5.5–500 K

The previously described electron optical measurements of the magnetic stray fields of Ni single crystals above the domain structure of plane ( 10)-surfaces oriented within 0.01° at room temperature are now extended to the temperature range 5.5–500 K. Their dependence on the angle ₀, 0° ₀ 5.41°, between exact 10 direction and the normal to the surface is investigated along the crystal axis 110. The results are discussed and compared with calculations of the μ^*-correction.