High-pressure Raman spectroscopic studies on orthophosphates Ba3(PO4)2 and Sr3(PO4)2

By using diamond anvil cell (DAC), high-pressure Raman spectroscopic studies of orthophosphates Ba₃(PO₄)₂ and Sr₃(PO₄)₂ were carried out up to 30.7 and 30.1 GPa, respectively. No pressure-induced phase transition was found in the studies. A methanol:ethanol:water (16:3:1) mixture was used as pressure medium in DAC, which is expected to exhibit nearly hydrostatic behavior up to about 14.4 GPa at room temperature. The behaviors of the phosphate modes in Ba₃(PO₄)₂ and Sr₃(PO₄)₂ below 14.4 GPa were quantitatively analyzed. The Raman shift of all modes increased linearly and continuously with pressure in Ba₃(PO₄)₂ and Sr₃(PO₄)₂. The pressure coefficients of the phosphate modes in Ba₃(PO₄)₂ range from 2.8179 to 3.4186 cm⁻¹ GPa⁻¹ for ν₃, 2.9609 cm⁻¹ GPa⁻¹ for ν₁, from 0.9855 to 1.8085 cm⁻¹ GPa⁻¹ for ν₄, and 1.4330 cm⁻¹ GPa⁻¹ for ν₂, and the pressure coefficients of the phosphate modes in Sr₃(PO₄)₂ range from 3.4247 to 4.3765 cm⁻¹ GPa⁻¹ for ν₃, 3.7808 cm⁻¹ GPa⁻¹ for ν₁, from 1.1005 to 1.9244 cm⁻¹ GPa⁻¹ for ν₄, and 1.5647 cm⁻¹ GPa⁻¹ for ν₂.     

Structure and properties of DLC–MoS2 thin films synthesized by BTIBD method

Diamond-like carbon (DLC)–MoS₂ composite thin films were synthesized using a biased target ion beam deposition (BTIBD) technique in which MoS₂ was produced by sputtering a MoS₂ target using Ar ion beams while DLC was deposited by ion beam deposition with CH₄ gas as carbon source. The structure and properties of the synthesized films were characterized by X-ray diffraction, X-ray absorption near edge structure (XANES), Raman spectroscopy, nanoindentation, ball-on-disk testing, and corrosion testing. The effect of MoS₂ target bias voltage, ranging from −200 to −800 V, on the structure and properties of the DLC–MoS₂ films was further investigated. The results showed that the hardness decreases from 9.1 GPa to 7 GPa, the Young?s modulus decreases from 100 GPa to 78 GPa, the coefficient of friction (COF) increases from 0.02 to 0.17, and the specific wear rate coefficient (k) increases from 5×10⁻⁷ to 5×10⁻⁶ mm³ N⁻¹ m⁻¹, with increasing the biasing voltage from 200 V to 800 V. Also, the corrosion resistance of the DLC–MoS₂ films decreased with the raise of biasing voltage. Comparing with the pure DLC and pure MoS₂ films, the DLC–MoS₂ films deposited at low biasing voltages showed better tribological properties including lower COF and k in ambient air environment.     

Hydration states and metallic intercalation effects in dry DNA

Temperature dependence of the complex dielectric constant at 16.3 GHz has been measured on dry poly(dA)-poly(dT) DNA with Na⁺ counterions under different relative humidity (RH). The rotational motion of sole water dipoles hydrated in PO₂⁻ is detected at low RH, and the collective motion due to water network in major groove is successfully observed at high RH. From the infrared (IR) spectroscopy in dry DNA introducing metallic ions (M-DNA), the symmetric and antisymmetric stretching bands of PO₂⁻ distinctly depend on RH and type of metallic ions. The IR spectral change indicates that the monovalent ions (Li and Na) are arranged in PO₂⁻ though the divalent and trivalent ions connect to the base molecules.     

Phase transitions and molecular motions in [Zn(NH3)4](BF4)2 studied by nuclear magnetic resonance, infrared and Raman spectroscopy

Middle infrared absorption, Raman scattering and proton magnetic resonance relaxation measurements were performed for [Zn(NH₃)₄](BF₄) in order to establish relationship between the observed phase transitions and reorientational motions of the NH₃ ligands and BF₄⁻ anions. The temperature dependence of spin-lattice relaxation time (T₁(¹H)) and of the full width at half maximum (FWHM) of the bands connected with ρ_r(NH₃), ν₂(BF₄) and ν₄(BF₄) modes in the infrared and in the Raman spectra have shown that in the high temperature phase of [Zn(NH₃)₄](BF₄)₂ all molecular groups perform the following stochastic reorientational motions: fast (τ_R≈10⁻¹² s) 120° flips of NH₃ ligands about three-fold axis, fast isotropic reorientation of BF₄⁻ anions and slow (τ_R≈10⁻⁴ s) isotropic reorientation (“tumbling”) of the whole [Zn(NH₃)₄]²⁺ cation. Mean values of the activation energies for uniaxial reorientation of NH₃ and isotropic reorientation of BF₄⁻ at phases I and II are ca. 3 kJ mol⁻¹ and ca. 5 kJ mol⁻¹, respectively. At phases III and IV the activation energies values for uniaxial reorientation of both NH₃ and of BF₄⁻ equal to ca. 7 kJ mol⁻¹. Nearly the same values of the activation energies, as well as of the reorientational correlation times, at phases III and IV well explain existence of the coupling between reorientational motions of NH₃ and BF₄⁻. Splitting some of the infrared bands at T_C2=117 K suggests reducing of crystal symmetry at this phase transition. Sudden narrowing of the bands connected with ν₂(BF₄), ν₄(BF₄) and ρ_r(NH₃) modes at T_C3=101 K implies slowing down (τ_R?10⁻¹⁰ s) of the fast uniaxial reorientational motions of the BF₄⁻ anions and NH₃ ligands at this phase transition.     

Observation of hot bands in the infrared spectrum of H2CO

Two hot bands in the infrared spectrum of formaldehyde (H₂CO) have been identified by means of tunable infrared laser spectroscopy using a jet-cooled sample. One band falls in the region 2760-2800 cm⁻¹; it follows a-type selection rules and it has been assigned as the ν₁ + ν₄ − ν₄ hot band. The other band falls in the region 2800-2860 cm⁻¹; it follows b-type selection rules and it has been assigned as the ν₅ + ν₄ − ν₄ hot band. The observations are restricted to low J and K_a levels. It has consequently been possible to ignore the effects of the extensive Coriolis couplings involving these levels in the analysis of the spectra and to model the rotational structure as that of a simple asymmetric top. Least-squares fits of the data have provided values for the band origins: 2774.2706(11) cm⁻¹ for the ν₁ + ν₄ − ν₄ and 2829.2621(8) cm⁻¹ for the ν₅ + ν₄ − ν₄ band. Term values for the upper vibrational levels involved in the transitions have been determined by use of the previously reported term values for the v₄ = 1 level.     

Effect of composition and deposition temperature on the characteristics of Ga doped ZnO thin films

ZnO films doped with Ga (GZO) of varying composition were prepared on Corning glass substrate by radio frequency magnetron sputtering at various deposition temperatures of room temperature, 150, 250 and 400 °C, and their temperature dependent photoelectric and structural properties were correlated with Ga composition. With increasing deposition temperature, the Ga content, at which the lowest electrical resistivity and the best crystallinity were observed, decreased. Films with optimal electrical resistivity of 2-3 × 10⁻⁴ Ω cm and with good crystallinity were obtained in the substrate temperature range from 150 to 250 °C, and the corresponding C_Ga/(C_Ga + C_Zn) atomic ratio was about 0.049. GZO films grown at room temperature had coarse columnar structure and low optical transmittance, while films deposited at 400 °C yielded the highest figure of merit (FOM) due to very low optical absorption despite rather moderate electrical resistivity slightly higher than 4 × 10⁻⁴ Ω cm. The optimum Ga content at which the maximum figure of merit was obtained decreased with increasing deposition temperature.     

High resolution infrared spectra of the ν1-ν4 bands of BiH3, and ab initio calculations of the spectroscopic parameters

The infrared spectrum of short-lived BiH₃ has been studied by Fourier transform technique. The BiH stretching bands ν₁/ν₃ at 1733.2546/1734.4671 cm⁻¹ and the bending fundamentals ν₂/ν₄ at 726.6992/751.2385 cm⁻¹ have been measured with a resolution of 5.5 and 6.6 × 10⁻³ cm⁻¹, respectively. The spectra were analyzed using different reductions of the rovibrational Hamiltonian accounting for the numerous resonance interactions in particular within the strongly Coriolis-coupled bending dyad. About 1150 and 980 transitions belonging to the ν₁/ν₃ and ν₂/ν₄ bands were fitted with an rms deviation of 0.62 and 0.53 × 10⁻³ cm⁻¹, respectively. High-level ab initio calculations at the coupled cluster CCSD(T) level with an energy-consistent small-core pseudopotential and large basis sets were carried out to determine the equilibrium structure, the anharmonic force field, and the associated spectroscopic constants of BiH₃. The theoretical results are in good agreement with the available experimental data.     

High-resolution infrared spectroscopy of the interacting ν9, ν5 + ν6 and 3ν6 levels of CH2BrF

The high-resolution (0.0030 cm⁻¹) Fourier transform infrared spectrum of CH₂⁷⁹BrF has been studied in part of the atmospheric window between 910 and 980 cm⁻¹, the region of the ν₉ (935.847 cm⁻¹) and ν₅ + ν₆ (961.239 cm⁻¹) bands. The ν₉ fundamental consists of a pseudo a-type band induced by Coriolis coupling with ν₅ + ν₆, in turn exhibiting a predominant a-type structure. Several interactions connecting these levels and the dark state 3ν₆ have been assessed. The whole data set is treated using Watson’s A-reduced Hamiltonian in the I^r representation implemented with first order a- and b- and c-type Coriolis terms. A detailed analysis of the rotational structure yields a set of accurate upper-state parameters up to quartic distortion terms for ν₉ and ν₅ + ν₆. In addition, spectroscopic information about the dark ternary overtone of ν₆ has been obtained.     

Optimal growth conditions for GdBa2Cu3O7 thin-film coated conductors characterized by polarized Raman scattering spectroscopy

High temperature superconducting GdBa₂Cu₃O₇ (GdBCO) thin films were grown by pulsed laser ablation. Textured MgO on metal substrates was used as a template for second generation wire applications. Growth conditions of GdBCO thin films were investigated for substrate temperature (T_s) and oxygen partial pressure (PO₂) during deposition. Superconducting critical currents of the films were obtained in the films grown at 790–810 °C of T_s and at 100–700 mTorr of PO₂. Scanning electron micrographs of the films revealed uniform and well-connected grains with some outgrown structures. X-ray θ–2θ scans of the films grown at 810 °C and 300–500 mTorr exhibited c-axis oriented texture. In-plane alignment and c-axis mosaic spread of the films were determined from X-ray Φ scans and rocking curves, respectively. Polarized Raman scattering spectroscopy was used to characterize optical phonon modes, oxygen content, cation disorder, and some possible second phases of the films. The Raman spectra of the films with large critical current density showed modes at 326–329 cm⁻¹, 444–447 cm⁻¹, 500–503 cm⁻¹ related to vibration of oxygen atoms. Origin of small peaks near 600 cm⁻¹ will be discussed as well. The information obtained from Raman scattering measurements will be useful for quality control of the conductors as well as optimization of the process conditions.     

Annealing temperature influence on electrical properties of ion beam sputtered Bi2Te3 thin films

Ion beam sputtering process was used to deposit n-type fine-grained Bi₂Te₃ thin films on BK7 glass substrates at room temperature. In order to enhance the thermoelectric properties, thin films are annealed at the temperatures ranging from 100 to 400 °C. X-ray diffraction (XRD) shows that the films have preferred orientations in the c-axis direction. It is confirmed that grain growth and crystallization along the c-axis are enhanced as the annealing temperature increased. However, broad impurity peaks related to some oxygen traces increase when the annealing temperature reached 400 °C. Thermoelectric properties of Bi₂Te₃ thin films were investigated at room temperature. The Bi₂Te₃ thin films, including as-deposited, exhibit the Seebeck coefficients of −90 to −168 μV K⁻¹ and the electrical conductivities of 3.92×10²-7.20×10² S cm⁻¹ after annealing. The Bi₂Te₃ film with a maximum power factor of 1.10×10⁻³ Wm⁻¹ K⁻² is achieved when annealed at 300 °C. As a result, both structural and transport properties have been found to be strongly affected by annealing treatment. It was considered that the annealing conditions reduce the number of potential scattering sites at grain boundaries and defects, thus improving the thermoelectric properties.     

Low energy Ar-ion bombardment effects on the CeO2 surface

The structure and electronic properties of epitaxial grown CeO₂(1 1 1) thin films before and after Ar⁺ bombardment have been comprehensively studied with synchrotron radiation photoemission spectroscopy (SRPES). Ar⁺ bombardment of the surface causes a new emission appearing at 1.6 eV above the Fermi edge which is related to the localized Ce 4f¹ orbital in the reduced oxidation state Ce³⁺. Under the condition of the energy of Ar ions being 1 keV and a constant current density of 0.5 μA/cm², the intensity of the reduced state Ce³⁺ increases with increasing time of sputtering and reaches a constant value after 15 min sputtering, which corresponds to the surface being exposed to 2.8 × 10¹⁵ ions/cm². The reduction of CeO₂ is attributed to a preferential sputtering of oxygen from the surface. As a result, Ar⁺ bombardment leads to a gradual buildup of an, approximately 0.69 nm thick, sputtering altered layer. Our studies have demonstrated that Ar⁺ bombardment is an effective method for reducing CeO₂ to CeO_2−x and the degree of the reduction is related to the energy and amount of Ar ions been exposed to the CeO₂ surface.     

Raman and FTIR studies of the structural aspects of Nasicon-type crystals; AFeTi(PO4)3 [A=Ca, Cd]

Raman and FTIR spectra of CaFeTi(PO₄)₃ and CdFeTi(PO₄)₃ are recorded and analyzed. The observed bands are assigned in terms of vibrations of TiO₆ octahedra and PO₄ tetrahedra. The symmetry of TiO₆ octrahedra and PO₄ tetrahedra is lowered from their free ion symmetry. The presence of Fe³⁺ ion disrupts the Ti-O-P-O-Ti chain and leads to the distortion of TiO₆ octrahedra and PO₄ tetrahedra. The PO₄³⁻ tetrahedra in both crystals are linearly distorted. The covalency bonding factor of PO₄³⁻ polyanion of both the crystals are calculated from the Raman spectra and compared to that of other Nasicon-type systems. The numerical values of covalency bonding factor indicates that there is a reduction in redox energy and cell voltage and is attributed to strong covalency of PO₄³⁻ polyanionin.     

Rotational analysis of the ν1, 2ν1 and 5ν1 stretching bands of HGeD3

The high-resolution spectrum of the ν₁=5 stretching overtone of gaseous H⁷⁰GeD₃ has been recorded by an intracavity laser absorption spectrometer based on a vertical external cavity surface emitting laser (VECSEL). The rotational structure of the excited state at 9874.605 cm⁻¹ was found weakly perturbed by unidentified interaction with dark states. Finally, of the 313 lines rotationally assigned, 239 lines were found unperturbed and could be reproduced with a root-mean-square (rms) deviation of 0.012 cm⁻¹. The retrieved set of rotational parameters agrees with the values extrapolated from the previously studied ν₁=6-8 stretching overtones. High-resolution FTIR spectra of the ν₁ and 2ν₁ bands have also been recorded and analyzed. The ν₁=1 level, (ν_eff=2114.15 cm⁻¹) is in anharmonic interaction with a further A₁ symmetry level (ν_eff=2102.39 cm⁻¹). The potential coupling term could be estimated (W_anh=5.6(3) cm⁻¹) and the most probable assignment of the perturber is ν₂+ν₃. Moreover both levels are rotationally perturbed in an irregular fashion. Only a coarse analysis up to J=6 could be performed. The 2ν₁ band reveals irregular perturbations of medium intensity by unknown dark states for almost all K values. Nevertheless the obtained leading rovibrational parameters of the 2ν₁ band for J?6 are in agreement with those of the ν₁=5-8 states.     

High resolution analysis of the ethylene-1-C spectrum in the 8.4-14.3-μm region

Fourier transform spectra of mono-¹³C ethylene have been recorded in the 8.4-14.3-μm spectral region (700-1190 cm⁻¹) using a Bruker 120 HR interferometer at a resolution of 0.0017 cm⁻¹ allowing the extensive study of the set of resonating states {10¹, 8¹, 7¹, 4¹, 6¹}. Due to the high resolution available as well as the extended spectral range involved in this study, a much larger set of line assignments are now available. The present analysis has lead to the determination of more accurate spectroscopic constants, including interaction constants, than were obtained in earlier studies. In particular, the following band centers were derived: ν₀(ν₁₀) = 825.40602(30) cm⁻¹, ν₀(ν₈) = 932.19572(15) cm⁻¹, ν₀(ν₇) = 937.44452(10) cm⁻¹, ν₀(ν₄) = 1025.6976(14) cm⁻¹. Finally a synthetic spectrum was generated leading to the assignment of a number of ¹³C¹²CH₄ lines observed in an earlier heterodyne spectroscopic study.     

Effects of rf power on surface-morphological, structural and electrical properties of aluminium-doped zinc oxide films by magnetron sputtering

Aluminium-doped zinc oxide (ZnO:Al) films were prepared by magnetron sputtering at different radio-frequency powers (P_rf) of 50, 100, 150 and 200 W. The properties of the films were characterised by X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), Raman microscopy, and spectrophotometry with the emphasis on the evolution of compositional, surface-morphological, optical, electrical and microstructural properties. XPS spectra showed that within the detection limit the films are chemically identical to near-stoichiometric ZnO. AFM revealed that root-mean-square roughness of the films has almost linear increase with increasing P_rf. Optical band gap E_gopt of the films increases from 3.31 to 3.51 eV when P_rf increases from 50 to 200 W. A widening E_gopt of the ZnO:Al films compared to the band gap (∼3.29 eV) of undoped ZnO films is attributed to a net result of the competition between the Burstein-Moss effect and many-body effects. An electron concentration in the films was calculated in the range of 3.73 × 10¹⁹ to 2.12 × 10²⁰ cm⁻³. Raman spectroscopy analysis indicated that well-identified peaks appear at around 439 cm⁻¹ for all samples, corresponding to the band characteristics of the wurtzite phase. Raman peaks in the range 573-579 cm⁻¹ are also observed, corresponding to the A₁ (LO) mode of ZnO.     

Effects of crystalline quality on the ultraviolet emission and electrical properties of the ZnO films deposited by magnetron sputtering

The ZnO films were deposited on c-plane sapphire, Si (0 0 1) and MgAl₂O₄ (1 1 1) substrates in pure Ar ambient at different substrate temperatures ranging from 400 to 750 °C by radio frequency magnetron sputtering. X-ray diffraction, photoluminescence and Hall measurements were used to evaluate the growth temperature and the substrate effects on the properties of ZnO films. The results show that the crystalline quality of the ZnO films improves with increasing the temperature up to 600 °C, the crystallinity of the films is degraded as the growth temperature increasing further, and the ZnO film with the best crystalline quality is obtained on sapphire at 600 °C. The intensity of the photoluminescence and the electrical properties strongly depend on the crystalline quality of the ZnO films. The ZnO films with the better crystallinity have the stronger ultraviolet emission, the higher mobility and the lower residual carrier concentration. The effects of crystallinity on light emission and electrical properties, and the possible origin of the n-type conductivity of the undoped ZnO films are also discussed.     

Electrical behaviour of SiOxNy thin films and correlation with structural defects

Silicon oxynitride thin films were deposited by reactive r.f. sputtering from a silicon target. Different Ar:O₂:N₂ gas atmospheres were used at fixed power density (3.18 W cm⁻²) and pressure (0.4 Pa) to obtain various film composition. Pt-SiO_xN_y-Pt sandwich type structure was realised for electrical property investigations. The C-V measurements showed the absence of a Schottky barrier and thus confirmed that Pt electrode provides an ohmic contact. The evolution of the current density showed a decrease of the film conductivity when the oxygen concentration in the films increases. The various layer composition leads to two different conduction mechanisms which were identified as space charge limited current (SCLC) and Poole-Frenkel effect. Finally, the structural defects of the films were studied by EPR analysis and the spin densities were correlated to both the composition and the electrical behaviour of the films.     

Structural and transport properties of cubic spinel ZnCo2O4 thin films grown by reactive magnetron sputtering

We report on the growth of cubic spinel ZnCo₂O₄ thin films by reactive magnetron sputtering and bipolarity of their conduction type by tuning of oxygen partial pressure ratio in the sputtering gas mixture. Crystal structure of zinc cobalt oxide films sputtered in an oxygen partial pressure ratio of 90% was found to change from wurtzite Zn_1−xCo_xO to spinel ZnCo₂O₄ with an increase of the sputtering power ratio between the Co and Zn metal targets, D_Co/D_Zn, from 0.1 to 2.2. For a fixed D_Co/D_Zn of 2.0 yielding single-phase spinel ZnCo₂O₄ films, the conduction type was found to be dependent on the oxygen partial pressure ratio: n-type and p-type for the oxygen partial pressure ratio below ∼70% and above ∼85%, respectively. The electron and hole concentrations for the ZnCo₂O₄ films at 300 K were as high as 1.37×10²⁰ and 2.81×10²⁰ cm⁻³, respectively, with a mobility of more than 0.2 cm²/V s and a conductivity of more than 1.8 S cm⁻¹.     

Band gap energy and bowing parameter of In-rich InAlN films grown by magnetron sputtering

The crystal structure, band gap energy and bowing parameter of In-rich In_xAl_1−xN (0.7 < x < 1.0) films grown by magnetron sputtering were investigated. Band gap energies of In_xAl_1−xN films were obtained from absorption spectra. Band gap tailing due to compositional fluctuation in the films was observed. The band gap of the as-grown InN measured by optical absorption method is 1.34 eV, which is larger than the reported 0.7 eV for pure InN prepared by molecular beam epitaxy (MBE) method. This could be explained by the Burstein-Moss effect under carrier concentration of 10²⁰ cm⁻³ of our sputtered films. The bowing parameter of 3.68 eV is obtained for our In_xAl_1−xN film which is consistent with the previous experimental reports and theoretical calculations.     

Doppler-limited CW infrared cavity ringdown spectroscopy of the ν1+ν3 OH + CH stretch combination band of jet-cooled methanol

A high resolution cavity ringdown spectrometer (CRDS) has been constructed using a 1.5 μm continuous-wave external-cavity tunable diode laser, a mode-matched near-confocal ringdown cavity, and 2 cm pulsed slit jet. Without signal averaging, the RMS noise in the absorption signal is 1.7 × 10⁻⁹ cm⁻¹. The rotationally resolved overtone spectrum of the OH(ν₁) + CH(ν₃) stretch combination band of methanol between 6510 and 6550 cm⁻¹ has been observed for J^′=0-8 and K^′=0-3 at sub-Doppler resolution. In total, 418 lines are assigned and global fits yield molecular torsion-rotation parameters for the upper state. Four K^′-localized perturbations are analyzed and the pattern of residuals is discussed.