Growth and magnetism in amorphous Si1−xMnx thin films grown by thermal deposition

Si_1−xMn_x   (x?0.22$x?0.22$) thin films were grown by using a thermal evaporator, and their magnetic and electrical properties were investigated. The Si_1−xMn_x semiconductors are amorphous when Mn concentration is 9.0 at% and less. The electrical resistivities of amorphous Si_1−xMn_x   (x?0.09$x?0.09$) semiconductor thin films are in the range of 9.86–6.59×10⁻⁴ Ω cm at room temperature and decrease with increasing Mn concentration. The amorphous Si_1−xMn_x   (x?0.09$x?0.09$) semiconductor thin films are p-type and hole densities are 3.73×10¹⁸–1.33×10²² cm⁻³ at room temperature. Low temperature magnetization characteristics reveal that amorphous Si_1−xMn_x   (x?0.09$x?0.09$) semiconductor thin films are paramagnetic.     

Fano line shape and anti-crossing of Raman active E2g peaks in the charge density wave state of NbSe2

Low energy Raman scattering from the ab-plane of the 2H polytype single crystal NbSe₂ has been investigated in the normal (N), incommensurate charge density wave (ICDW) and superconducting (SC) phases. The temperature dependence of the polarization resolved Raman response has been obtained for the excitation wavelength of 647 nm and fitted to phenomenological models for the E_2g and A_1g symmetry channels. The A_1g response can be fitted by a simple damped oscillator peak superimposed on continuous background. The E_2g response displays an anti-resonance interference pattern between the inter-layer phonon and the CDW-induced mode such that a hybridized configuration (Fano line shape [1]) is required for modelling. The polarization specific peak maxima positions and line widths as a function of temperature, deduced in this manner, are presented. Partial suppression of the electronic continuum scattering in the Raman shift range up to 110 cm⁻¹ in the A_1g symmetry channel and beyond 300 cm⁻¹ in the E_2g symmetry channel is indicative of high energy electronic states far away from the Fermi surface participating in the ICDW formation.     

Analysis of confinement potential fluctuation and band-gap renormalization effects on excitonic transition in GaAs/AlGaAs multiquantum wells grown on (1 0 0) and (3 1 1)A GaAs surfaces

The competition between confinement potential fluctuations and band-gap renormalization (BGR) in GaAs/Al_xGa_1−xAs$\mathrm{GaAs}/{\mathrm{Al}}_x{\mathrm{Ga}}_{1-x}\mathrm{As}$ quantum wells grown on [1 0 0] and [3 1 1]A GaAs substrates is evaluated. The results clearly demonstrate the coexistence of the band-tail states filling related to potential fluctuations and the band-gap renormalization caused by an increase in the density of photogenerated carriers during the photoluminescence (PL) experiments. Both phenomena have strong influence on temperature dependence of the PL-peak energy (E_PL(T))$(E_{\mathit{PL}}(T))$. As the photon density increases, the E_PL can shift to either higher or lower energies, depending on the sample temperature. The temperature at which the displacement changes from a blueshift to a redshift is governed by the magnitude of the potential fluctuations and by the variation of BGR with excitation density. A simple band-tail model with a Gaussian-like distribution of the density of state was used to describe the competition between the band-tail filling and the BGR effects on E_PL(T).     

Dirac quasiparticle tunneling in a NG/ferromagnetic barrier/SG graphene junction

We study the tunneling conductance in a spin dependent barrier NG/F_B/SG graphene junction, where NG, F_B and SG are normal graphene, gate ferromagnetic graphene barrier with thickness d and the graphene s-wave superconductor, respectively. In our work, the quasiparticle scattering process at the interfaces is based on quasi particles governed by the Dirac Bogoliubov–de Gennes equation with effective speed of light v_F ∼ 10⁶ m/s. The conductance of the junction is calculated based on Blonder–Tinkham–Klapwijk (BTK) formalism. The oscillatory conductance under varying gate potential and exchange energy in F_B and the conductance induced by specular Andreev reflection are studied. By taking into account both effects of barrier strengths due to the gate potential χ_G∼V_Gd/?v_F${\chi }_{\text{G}}\sim V_{\text{G}}d/?v_{\text{F}}$ and the exchange energy χ_ex∼E_exd/?v_F${\chi }_{\text{ex}}\sim E_{\text{ex}}d/?v_{\text{F}}$ in the F_B region, we find that the zero bias conductance of junction depends only on the ferromagnetic barrier strength χ_ex in F_B, when the Fermi energy in SG is very much larger than that the Fermi energy in NG (E_FS ? E_FN). The oscillatory conductance peaks can be controlled by either varying χ_ex or χ_G. In the limiting case, by setting E_ex = 0, the conductance in a NG/N_B/SG graphene junction, where SG is the s-wave superconductor, is also studied in order to compare with two earlier contradicted data. Our result agrees with what was obtained by Linder and Sudbo [J. Linder, A. Sudbo, Phys. Rev. B 77 (2008) 64507], which confirms the contradiction to what was given by Bhattacharjee and Sengupta [S. Bhattacharjee, K. Sengupta, Phys. Rev. Lett. 97 (2006) 217001].     

Inter-network magnetic interactions in GdMexMn1−xO3 perovskites (Me=transition metal)

The gadolinium-based manganite GdMnO₃ of perovskite structure has been partially substituted at the manganese site by transition metal elements Me like Cu, Ni and Co, leading to a general formula GdMe_xMn_1−xO₃, in which different magnetic entities (e.g., Gd³⁺, Cu²⁺, Ni²⁺, Co²⁺, Co³⁺, Mn³⁺, Mn⁴⁺) can coexist, depending on charge equilibrium conditions. For divalent cations such as Cu²⁺ and Ni²⁺, the solid solution extends from x  (Me)=0–0.5, with O-type orthorhombic symmetry (a<c/√2<b)$\left(a<c/\surd 2<b\right)$. When the substituting element is cobalt, the solid solution extends over the whole range [0?x  ?1], changing from O′-type symmetry (c/√2<a<b)$\left(c/\surd 2<a<b\right)$ to O-type for x>0.5. In this latter case, the synthesis is performed under oxygen flow, which allows the cobalt ion to take a 3+ oxidation state.     

Molecular dynamics and phase transitions in paramagnetic [Mn(H2O)6][SiF6] investigated by H NMR

The temperature dependences of ²H NMR spectra and spin-lattice relaxation time T₁ have been measured for paramagnetic [Mn(H₂O)₆][SiF₆]. The obtained ²H NMR spectra were simulated by considering the quadrupole interaction and paramagnetic shift. The variation of the spectra measured in phase III was explained by the 180° flip of water molecules. The activation energy E_a and the jumping rate at infinite temperature k₀ for the 180° flip of H₂O were obtained as 35 kJ mol⁻¹ and 4×10¹⁴ s⁻¹, respectively. The spectral change in phases I and II was ascribed to the reorientation of [Mn(H₂O)₆]²⁺ around the C₃ axis where the E_a and k₀ values were estimated as 45 kJ mol⁻¹ and 1×10¹³ s⁻¹, respectively. From the almost temperature independent and short T₁ value, the correlation time for electron-spin flip-flops, τ_e, and the exchange coupling constant J were obtained as 3.0×10⁻¹⁰ s and 2.9×10⁻³ cm⁻¹, respectively. The II-III phase transition can be caused by the onset of the jumping motion of [Mn(H₂O)₆]²⁺ around the C₃ axis.     

Inelastic X-ray scattering investigations of lattice dynamics in SmFeAsO1−xFysuperconductors

We report measurements of the phonon density of states as probed with inelastic X-ray scattering in SmFeAsO_1−xF_y powders. An unexpected strong renormalization of phonon branches around 23 meV is observed as fluorine is substituted for oxygen. Phonon dispersion measurements on SmFeAsO_1−xF_y single crystals allow us to identify the 21 meV A_1g in-phase (Sm,As) and the 26 meV B_1g (Fe,O) modes to be responsible for this renormalization, and may reveal unusual electron-phonon coupling through the spin channel in iron-based superconductors.     

Fabrication and characterization of electrodeposited Co1−xCrx nanowires

Co_1−xCr_x   alloy nanowires with 0.01<x<0.93$0.01<x<0.93$ were fabricated by electrodeposition in a porous alumina membrane from an electrolyte containing Co and Cr ions. The composition, structure and magnetic properties of the nanowires have been characterized. Cobalt-rich nanowires were electrodeposited at a potential of −1.0 V relative to Ag/AgCl and chromium-rich nanowires were deposited beyond −3.5 V. The optimized processing conditions include hydrogen annealing to give hysteresis loops for the Co₈₀Cr₂₀ nanowires with coercivity of up to 200 mT and squareness of up to 0.95. Magnetization of the Co₈₀Cr₂₀ nanowire is 77 A m² kg⁻¹ and the energy product of the arrays is 35 kJ m⁻³.     

Effects of lattice and local dynamics in EPR spectra and electron spin relaxation of vibronic Cu(imidazole)6 complexes in Zn(imidazole)6Cl2·4H2O crystals

Cu(im)₆ complexes in Zn(im)₆Cl₂·4H₂O exhibit a strong Jahn-Teller effect which is static below 100 K and the complex in localized in the two low-energy potential wells. We have reinvestigated electron paramagnetic resonance (EPR) spectra in the temperature range 4.2-300 K and determined the deformation directions produced by the Jahn-Teller effect, energy difference 11 cm⁻¹ between the wells and energy 300 cm⁻¹ of the third potential well. The electron spin relaxation was measured by electron spin echo (ESE) method in the temperature range of 4.2-45 K for single crystal and powder samples. The spin-lattice relaxation is dominated by a local mode of vibration with energy 11 cm⁻¹ at low temperatures. We suppose that this mode is due to reorientations (jumps) of the Cu(im)₆ complex between the two lowest energy potential wells. At intermediate temperatures (15-35 K), the T₁ relaxation is determined by the two-phonon Raman processes in acoustic phonon spectrum with Debye temperature Θ_D=167 K, whereas at higher temperatures the relaxation is governed by the optical phonon of energy 266 cm⁻¹. The ESE dephasing is produced by an instantaneous diffusion below 15 K with the temperature-independent phase memory time , then it grows exponentially with temperature with an activation energy of 97 cm⁻¹. This is the energy of the first excited vibronic level. The thermal population of this level leads to a transition from anisotropic to isotropic EPR spectrum observed around 90 K. FT-ESE gives ESEEM spectrum dominated by quadrupole peaks from non-coordinating ¹⁴N atom of the imidazole rings and the peak from double quantum transition ν_dq. We show that the amplitude of the ν_dq transition can be used to determine the number of non-coordinating nitrogen atoms.     

Preference orientation and magnetic properties of CoxFe3−xO4 nanocrystalline thin films on quartz substrate

Nanocrystalline spinel ferrite thin films of Co_xFe_3−xO₄ (x=0.3$x=0.3$, 0.5, 0.8, and 1.0) have been prepared by RF sputtering on quartz substrate without a buffer layer at room temperature and annealed at the temperature range from 200 to 600 °C in air. The as-sputtered films exhibit the preferred orientation and the high magnetization and coercivity. After annealing, the preferred orientations become poor, but the magnetization and coercivity increase. The sample with a magnetization of 455 emu/cm³, a coercivity of 2.8 kOe, a remanence ratio of 0.72, and a maximum energy product of 2.4 MGOe has been obtained. The influence of Co ions and annealing temperature on the magnetic properties has been discussed.     

Magnetic entropy-change in La0.67−xBixCa0.33MnO3 compound

Bi doped lanthanum manganites with the chemical composition of La_0.67−xBi_xCa_0.33MnO₃ (x=0$x=0$, 0.05, 0.1, 0.2) were prepared by the standard solid-state process. The Curie temperatures were measured to be 267 K for x=0$x=0$, 248 K for x=0.05$x=0.05$, 244 K for x=0.1$x=0.1$ and 229 K for x=0.2$x=0.2$ samples. It was found that the maximum value of the magnetic entropy change ∣ΔS_m∣ has reached the highest value of 6.08 J/kg K at 3 T for the composition with x=0.05$x=0.05$. Nearly the same maximum entropy change was observed for the x=0$x=0$ sample. A large decrease in the magnitude of the entropy change was observed for the x=0.2$x=0.2$ sample.     

Physical properties of the delafossite LaCuO2

High-quality LaCuO₂, elaborated by solid-state reaction in sealed tube, crystallizes in the delafossite structure. The thermal analysis under reducing atmosphere (H₂/N₂: 1/9) revealed a stoichiometric composition LaCuO_2.00. The oxide is a direct band-gap semiconductor with a forbidden band of 2.77 eV. The magnetic susceptibility follows a Curie-Weiss law from which a Cu²⁺ concentration of 1% has been determined. The oxygen insertion in the layered crystal lattice induces p-type conductivity. The electrical conduction occurs predominantly by small polaron hopping between mixed valences Cu^+/2+ with an activation energy of 0.28 eV and a hole mobility (μ_300 K=3.5×10⁻⁷ cm² V⁻¹ s⁻¹), thermally activated. Most holes are trapped in surface-polaron states upon gap excitation. The photoelectrochemical study, reported for the first time, confirms the p-type conduction. The flat band potential (V_fb=0.15 V_SCE) and the hole density (N_A=5.8×10¹⁷ cm⁻³) were determined, respectively, by extrapolating the curve C⁻² versus the potential to their intersection with C⁻²=0 and from the slope of the linear part in the Mott-Schottky plot. The valence band is made up of Cu-3d orbital, positioned at 4.9 eV below vacuum. An energy band diagram has been established predicting the possibility of the oxide to be used as hydrogen photocathode.     

DC conductivity of silver vanadium tellurite glasses

The mixed electronic-ionic conduction in 0.5[xAg₂O-(1−x)V₂O₅]-0.5TeO₂ glasses with x=0.1-0.8 has been investigated over a wide temperature range (70-425 K). The mechanism of dc conductivity changes from predominantly electronic to ionic within the 30?mol% Ag₂O?40 range; it is correlated with the underlying change in glass structure. The temperature dependence of electronic conductivity has been analyzed quantitatively to determine the applicability of various models of conduction in amorphous semiconducting glasses. At high temperature, T>θ_D/2 (where θ_D is the Debye temperature) the electronic dc conductivity is due to non-adiabatic small polaron hopping of electrons for 0.1?x?0.5. The density of states at Fermi level is estimated to be N(E_F)≈10¹⁹-10²⁰ eV⁻¹ cm⁻³. The carrier density is of the order of 10¹⁹ cm⁻³, with mobility ≈2.3×10⁻⁷-8.6×10⁻⁹ cm² V⁻¹ s⁻¹ at 300 K. The electronic dc conductivity within the whole range of temperature is best described in terms of Triberis-Friedman percolation model. For 0.6?x?0.8, the predominantly ionic dc conductivity is described well by the Anderson-Stuart model.     

Effects of Ag addition on electrical transport and magnetic properties of La0.67Ba0.33Mn0.88Cr0.12O3

We have prepared a series of polycrystalline manganites with the nominal compositions, La_0.67Ba_0.33Mn_0.88Cr_0.12O₃/Ag_x (LBMCO/Ag_x) (x   is the mole fraction) with x=0$x=0$, 0.05, 0.1, 0.15, 0.2, 0.23, 0.27, 0.3, 0.35. The X-ray diffraction patterns show that the samples with x>0.05$x>0.05$ are two-phase composites. The Ag addition in LBMCO improves the properties of grain surfaces/boundaries and reduces the resistivity of the composites. For x=0.30$x=0.30$ sample, a minimum resistivity is obtained and a maximum room temperature magnetoresistance up to −54.5% was observed at 288 K, 1 T field. The room temperature T_C and the reduced resistivity are responsible for the enhancement of room temperature MR.     

Optical characterization of gallium antimonide highly doped with manganese

Gallium antimonide crystals highly doped with Mn were prepared by a liquid-phase-electroepitaxy growth method. The crystals exhibited high hole concentrations up to 6×10¹⁸ cm⁻³. Photoluminescence (PL) and transmission techniques were used for their investigation. Spectral line-shapes typical for highly doped semiconductors were observed. The lines revealed the features corresponding to band gap narrowing and valence-band filling phenomena. Values of the band-gap narrowing ΔE_g and the degree of the valence-band filling ΔE_F were estimated from the PL spectra. The ionization energy of the Mn acceptor E_i was estimated to be approximately 15.1-15.6 meV. At low temperatures, the PL maxima shifted relatively strongly towards higher energy with temperature. The shifts most probably resulted from a dramatic change in the electron density of states near the bottom of the conduction band. The extent of low-energy tails of the PL bands correlates with the doping levels. The transmission spectra exhibited an absorption band centred at around 774-780 meV. The band most probably originated in electron transitions from the level of spin-orbit splitting to the top of the valence band.     

Effect of Mg substitution on electromagnetic properties of (Ni0.25Cu0.20Zn0.55)Fe2O4 ferrite prepared by auto combustion method

The ferrite compositions of (Ni_0.25−xMg_xCu_0.2Zn_0.55)Fe₂O₄ with x=0.0$x=0.0$, 0.07, 0.13, 0.18, and 0.25 were synthesized through nitrate-citrate auto-combustion method. The as-burnt powders showed the presence of crystalline cubic spinel ferrite with about 19–22 nm crystallite sizes. The resultant powders were calcined at 700 °C/2 h and pressed ferrites were sintered at 950 °C/4 h. The initial permeability, magnetic loss and AC resistivity were measured in the frequency range 10 Hz–10 MHz. The permeability and AC resistivity were found to increase and the magnetic loss decreased with Mg substitution for Ni, up to x=0.18$x=0.18$. The very high permeability in the composition x=0.18$x=0.18$, was due to better densification, lower magnetostriction constant and inner stresses, etc. The AC resistivity of the composition was also highest. The composition would be better than NiCuZn-based material for more miniaturization of multi layer chip inductor.