Use of sodium beta alumina in novel processes for the production of metals

Sodium metal is an excellent reductant and can be used to reduce most metallic chlorides and many oxides. However, sodium is relatively expensive and is hazardous to store so that it is only used to reduce titanium tetrachloride to titanium. In-situ electrolytic preparation of sodium from sodium chloride in a reactor is difficult due to the evolution of chlorine, another hazardous substance. A novel cell is described where the sodium salt is separated from the salt to be reduced by a sodium beta alumina membrane. The anode is in the sodium salt and the cathode is in the metallic salt and, on the application of current, it has been found that the metal ions are reduced to the metal and the anion in the sodium salt is oxidised. By using sodium hydroxide or sodium carbonate as the sodium salt, the anodic products are oxygen and water vapour or oxygen and carbon dioxide. Examples are given of electrolytic cells incorporating beta alumina membranes for the production of magnesium and zirconium from the chlorides where the metal is produced and the anodic gases are not toxic. Overall these cells are very efficient as the anodic and cathodic products are separated by the beta alumina membrane and compared with existing cells some of the electrical energy requirement is replaced by chemical energy. The environmental benefits of these cells are very attractive for the production of reactive metals on a small scale. Paper presented at the 4th Euroconference on Solid State Ionics, Connemara, Galway, Ireland, Sept. 13–19, 1997     

Investigation of oxygen states and reactivities on a nanostructured cupric oxide surface

Nanostructured copper (II) oxide was formed on clean copper foil at room temperature using activated oxygen produced by RF discharge. CuO particles of approximately 10-20 nm were observed on the surface by Scanning Tunneling Microscopy (STM). The copper states and oxygen species of the model cupric oxide were studied by means of X-ray Photoelectron Spectroscopy (XPS). These oxide particles demonstrated abnormally high reactivity with carbon monoxide (CO) at temperatures below 100 °C. The XPS data showed that the interaction of CO with the nanostructured cupric oxide resulted in reduction of the CuO particles to Cu₂O species. The reactivity of the nanostructured cupric oxide to CO was studied at 80 °C using XPS in step-by-step mode. The initial reactivity was estimated to be 5 × 10⁻⁵ and was steadily reduced down to 5 × 10⁻⁹ as the exposure was increased. O1s spectral analysis allowed us to propose that the high initial reactivity was caused by the presence of non-lattice oxygen states on the surface of the nanostructured CuO. We established that reoxidation of the partially reduced nanostructured cupric oxide by molecular oxygen O₂ restored the highly reactive oxygen form on the surface. These results allowed us to propose that the nanostructured cupric oxide could be used for low temperature catalytic CO oxidation. Some hypotheses concerning the nature of the non-lattice oxygen species with high reactivity are also discussed.     

Formation of interface and surface oxides on supported Pd nanoparticles

We have quantitatively studied the interaction between oxygen and an Fe₃O₄-supported Pd model catalyst by molecular beam (MB) methods, time resolved IR reflection absorption spectroscopy (TR-IRAS) and photoelectron spectroscopy (PES) using synchrotron radiation. The well-shaped Pd particles were prepared in situ by metal evaporation and growth under ultrahigh vacuum (UHV) conditions on a well-ordered Fe₃O₄ film on Pt(1 1 1).It is found that for oxidation temperatures up to 450 K oxygen predominantly chemisorbs on metallic Pd whereas at 500 K and above (∼10⁻⁶ mbar effective oxygen pressure) large amounts of Pd oxide are formed. These Pd oxide species preferentially form a thin layer at the particle/support interface, stabilized by the iron-oxide support. Their formation and reduction is fully reversible. Upon decomposition, oxygen is released which migrates back onto the metallic part of the Pd surface. In consequence, the Pd interface oxide layer acts as an oxygen reservoir, the capacity of which by far exceeds the amount of chemisorbed oxygen on the metallic surface.Additionally, Pd surface oxides can also be formed at temperatures above 500 K. The extent of surface oxide formation critically depends on the oxidation temperature. This effect is addressed to different onset temperatures for oxidation of the particle facets and sites. It is shown that the presence of Pd surface oxides sensitively modifies the adsorption and reaction properties of the model catalyst, i.e. by lowering the CO adsorption energy and CO oxidation probability. Still, a complete reduction of the Pd surface oxides can be obtained by extended CO exposure, fully reestablishing the metallic Pd surface.     

An XPS study on ion beam induced oxidation of titanium silicide

Titanium silicides (TiSi₂) films grown on Si(1 0 0) substrate were investigated by ex situ XPS depth profiling after athermal ion beam induced oxidation (IBO) at 12 keV O₂⁺ incident energy and normal incidence. The composition and stoichiometry of these films were quantitatively determined as chemical state relative concentrations versus sputter time. “In depth” silicon and titanium oxidation states have been obtained after spectra deconvolution, showing a mixture of silicon dioxide, titanium dioxide, titanium suboxides, elemental titanium and residual traces of titanium nitride. Thermochemical data based on the corresponding enthalpies of formation of the oxides cannot explain our experimental results as in the case of low energy IBO, an oxygen defective altered layer is formed, presenting features of a reduced TiO_x phase.     

Growth of oxide thin films for optical gas sensor applications

Tungsten trioxide and titanium dioxide thin films were synthesised by pulsed laser deposition. We used for irradiations of oxide targets an UV KrF* (λ = 248 nm, τ_FWHM ≅ 20 ns, ν = 2 Hz) excimer laser source, at 2 J/cm² incident fluence value. The experiments were performed in low oxygen pressure. The (0 0 1) SiO₂ substrates were heated during the thin film deposition process at temperature values within the 300-500 °C range. The structure and crystalline status of the obtained oxide thin films were investigated by high resolution transmission electron microscopy. Our analyses show that the films are composed by nanoparticles with average diameters from a few to a few tens of nm. Moreover, the films deposited at substrate temperatures higher than 300 °C are crystalline. The tungsten trioxide films consist of a mixture of triclinic and monoclinic phases, while the titanium dioxide films structure corresponds to the tetragonal anatase phase. The oxide films average transmittance in the visible-infrared spectral range is higher than 80%, which makes them suitable for sensor applications.     

Copper reduction and hydroxyl formation by hydrogen process in alumino-silicate glasses

The process of nanometric copper (Cu⁰) precipitation by hydrogen in alumino-silicate glasses was studied regarding the simultaneous formation of hydroxyl bonding. Firstly, copper-ion-doped alumino-silicate glasses were melt-quenched and then heat-treated in the presence of hydrogen gas, which allowed copper ions to be reduced into nanometric metal particles. Along with the metallic copper formation, there was also formed the hydroxyl groups as a byproduct of the reaction. From spectroscopic studies, it was revealed that the reduction process was kinetically controlled by the hydrogen diffusion into the glasses. After the Cu⁰ precipitation, in particular, at temperatures higher than 700 °C or for reduction times longer than 5 h the copper metal was found to move towards the surface, creating a copper metal rich surface. Moreover, an increase in hydrogen permeation with the treatment time was also observed and this tendency was more intense for the matrix, which allowed higher copper reduction.     

Studies on pore morphology of titanium and its oxide by small angle neutron scattering

Titanium metal bodies have been prepared from the sintered powder compacts of TiO₂ by a novel molten salt electrochemical approach, known as FFC Cambridge process. The phase and compositional characterizations of both Ti and TiO₂ have been carried out by X-ray diffraction. The pore morphologies of sintered TiO₂ pellet and the metallic Ti pellet, obtained after electrochemical reduction have been studied by SANS over a scattering wave vector q range of 0.003–3.5 nm⁻¹ using a double crystal diffractometer and a pin-hole collimated SANS instrument. In the case of reduced metal pellet, average pore size was found to be larger than that of the oxide pellet as the voids left behind after the oxygen atoms left the oxide matrix, could not coalesce.      

Fabrication of Cu nano particles by direct electrochemical reduction from CuO nano particles

In this report, Cu nano particles have been prepared by direct electrochemical reduction from CuO nano particles and the reduction mechanism was investigated. To investigate the reduction mechanism, CuO has been deposited on the AISI 430 by magnetron sputtering in various Ar/O₂ ratio and the cyclic voltammetry (CV) was performed in 0.5 M NaCl solution at 300 K. This result indicated that the oxygen from the CuO was ionized at −0.874 V (versus SCE) and reduced to Cu. To fabricate Cu nano particles, we employed CuO nano particles, which were prepared by a conventional mechanical milling, with a dc rectifier and the specific electrochemical cell. The structure of the films and nano particles were analyzed by XRD, SEM/EDS and XPS.     

Pure and Nb-doped TiO1.5 films grown by pulsed-laser deposition for transparent p-n homojunctions

Pure and Nb-doped titanium oxide thin films were grown on sapphire substrates by pulsed-laser deposition in vacuum (10⁻⁷ mbar). The PLD growth leads to titanium oxide thin films displaying a high oxygen deficiency (TiO_1.5) compared with the stoichiometric TiO₂ compound. The structural and electrical properties (phase, crystalline orientation, nature and concentration of charge carriers, etc.) of these titanium oxide films were studied by XRD measurements and Hall effect experiments, respectively. The undoped TiO_1.5 phase displayed a p-type semiconductivity. Doping this titanium oxide phase with Nb⁵⁺ leads to an n-type behaviour as is generally observed for titanium oxide films with oxygen deficiency (TiO_x with 1.7 < x < 2). Multilayer homojunctions were obtained by the stacking of TiO_1.5 (p-type) and Nb-TiO_1.5 (n-type) thin films deposited onto sapphire substrates. Each layer is 75 nm thick and the resulting heterostructure shows a good transparency in the visible range. Finally, the I-V curves obtained for such systems exhibit a rectifying response and demonstrate that it is possible to fabricate p-n homojunctions based only on transparent conductive oxide thin films and on a single chemical compound (TiO_x).     

An XPS study on the surface reduction of V2O5(0 0 1) induced by Ar ion bombardment

The effect of the irradiation with Al Kα X-rays during an XPS measurement upon the surface vanadium oxidation state of a fresh in vacuum cleaved V₂O₅(0 0 1) crystal was examined. Afterwards, the surface reduction of the V₂O₅(0 0 1) surface under Ar⁺ bombardment was studied. The degree of reduction of the vanadium oxide was determined by means of a combined analysis of the O1s and V2p photoelectron lines. Asymmetric line shapes were needed to fit the V³⁺2p photolines, due to the metallic character of V₂O₃ at ambient temperature. Under Ar⁺ bombardment, the V₂O₅(0 0 1) crystal surface reduces rather fast towards the V₂O₃ stoichiometry, after which a much slower reduction of the vanadium oxide occurs.     

Surface-modification of indium tin oxide nanoparticles with titanium dioxide by a nonaqueous process and its photocatalytic properties

Indium tin oxide nanoparticles prepared by co-precipitation were re-dispersed in benzyl alcohol and modified successfully with titanium dioxide using titanium tetrachloride as precursor. The morphologies and the re-dispersing processes of both the initial and modified indium tin oxide nanoparticles were investigated, respectively. The photocatalytic properties of the modified nanoparticles were compared with commercial P25 photocatalyst. It was found that (i) the average diameter of the initial indium tin oxide nanoparticles was 10.7 nm and that of the surface-modified nanoparticles was 14.5 nm; (ii) the optimal ultrasonication time was 10.0 min and 8.0 min for the initial and surface-modified ITO nanoparticles, respectively; (iii) the modified particles possessed a higher photocatalytic activity than commercial P25 photocatalyst in the photodegradation of rhodamine B in aqueous medium at pH 5.00; (iv) the pH of the medium markedly influences the photodegradation efficiency.     

Spectroscopic characterization of Ni films on sub-10-nm silica layers: Thermal metamorphosis and chemical bonding

The thermal evolution in the chemical and physical characteristics of the Ni film of thickness 1-50 nm deposited on silica of thickness less than 10 nm was studied. The chemical composition of silica affected the thermal behavior of the Ni overlayer substantially. Nickel deposited on native oxide may diffuse downward into native oxide during annealing and was oxidized. It mainly produced Ni₃O₂ and silicides below 150 °C. Increasing the temperature to 300 °C caused further oxidation of Ni to yield NiO. The sub-10-nm silicon dioxide layer, on the other hand, can inhibit the diffusion of Ni atoms downward when the Ni-deposited sample was annealed. Instead, these atoms aggregated into small particles on the surface at elevated temperatures, causing the substrate to be exposed. The size of the particles produced can be controlled, as it increased almost linearly with the thickness of the Ni film deposited in the low thickness regime. The thinner Ni films yielded smaller, round nanoparticles with better dispersity. The particles formed were strongly adhered to the silicon dioxide surface. The bulk of the particles formed was mainly metallic. Exposing to the air of the Ni particles formed on silicon dioxide mainly produces Ni₂O₃ on the particles.     

Deep reduction behavior of iron oxide and its effect on direct CO oxidation

Reduction of metal oxide oxygen carrier has been attractive for direct CO oxidation and CO₂ separation. To investigate the reduction behaviors of iron oxide prepared by supporting Fe₂O₃ on γ-Al₂O₃ and its effect on CO oxidation, fluidized-bed combustion experiments, thermogravimetric analyzer (TGA) experiments, and density functional theory (DFT) calculations were carried out. Gas yield (γCO₂) increases significantly with the increase of temperature from 693 K to 1203 K, while carbon deposition decreases with the increase of temperature from 743 K to 1203 K, where temperature is a very important factor for CO oxidation by iron oxide. Further, it were quantitatively detected that the interaction between CO and Fe₂O₃, breakage of O-Fe bonds and formation of new C-O bonds, and effect of reduction degree were quantitatively detected. Based on adsorptions under different temperatures and reducing processes from Fe³⁺ into Fe²⁺, Fe⁺ and then into Fe, it was found that Fe²⁺ → Fe⁺ was the reaction-controlling step and the high oxidation state of iron is active for CO oxidation, where efficient partial reduction of Fe₂O₃ into FeO rather than complete reduction into iron may be more energy-saving for CO oxidation.     

Sn interaction with the CeO2(1 1 1) system: Bimetallic bonding and ceria reduction

A tin layer 0.8 nm thick was deposited onto the CeO₂(1 1 1) surface by molecular beam deposition at a temperature of 520 K. The interaction of tin with cerium oxide (ceria) was investigated by X-ray photoelectron spectroscopy (XPS), ultra-violet photoelectron spectroscopy (UPS) and resonant photoelectron spectroscopy (RPES). The strong tin-ceria interaction led to the formation of a homogeneous bulk Ce-Sn-O mixed oxide system. The bulk compound formation is accompanied by partial Ce⁴⁺ → Ce³⁺ reduction, observed as a giant 4f resonance enhancement of the Ce³⁺ species. CeO₂ and SnO₂ oxides were formed after oxygen treatment at 520 K. The study proved the existence of strong Ce-Sn interaction and charge transfer from Sn to the Ce-O complex that lead to a weakening of the cerium-oxygen bond, and consequently, to the formation of oxygen deficient active sites on the ceria surface. This behavior can be a key for understanding the higher catalytic activity of the SnO_x/CeO_x mixed oxide catalysts as compared with the individual pure oxides.     

Interaction of O2 with Pd single crystals in the range 1-150 Torr: Oxygen dissolution and reaction

The interaction of O₂ with Pd(1 1 1), Pd(1 1 0) and Pd(1 0 0) was studied in the pressure range 1-150 Torr by the techniques of temperature programmed decomposition (TPD), Auger electron spectroscopy (AES) and low energy electron diffraction (LEED). The oxidation of Pd was rate-determined by oxygen diffusion into Pd metal followed by the diffusion into PdO once the bulk oxide layer was formed. The dissolution of oxygen atoms into Pd metal followed the Mott-Cabrera model with diffusion coefficient 10⁻¹⁶ cm² s⁻¹ at 600 K and activation energy of 60-85 kJ mol⁻¹. The bulk oxide phase was formed when a critical oxygen concentration was reached in the near-surface region. The formation of PdO was characterized by a decrease in the oxygen uptake rate, the complete fading of the metallic Pd LEED pattern and an atomic ratio O/Pd of 0.15-0.7 as measured by AES. The diffusion of oxygen through the bulk oxide layer again conformed to the Mott-Cabrera parabolic diffusion law with diffusion coefficient 10⁻¹⁸ cm² s⁻¹ at 600 K and activation energy of 111-116 kJ mol⁻¹. The values for the diffusion coefficient and apparent activation energy increased as the surface atom density of the single crystals increased.     

Effect of oxygen on the production of abnormally high heats of interaction with hydrogen chemisorbed on gold

Abnormally high heats, exceeding 1600 kJ/mol (16 eV) per molecular oxygen, are generated by interaction of the oxygen with the hydrogen adsorbed on gold surfaces at 125 °C. The highest heats were observed during the interactions of fine gold particles supported on titanium oxide, approaching 1700 kJ/mol for three consecutive 100 nmol pulses of O₂ interacting with the adsorbed hydrogen atoms. The heats rapidly decrease after the hydrogen is consumed. It was also observed that the interactions of the gold particles with pure oxygen in the presence of noble gases, such as argon and helium, produced the heats markedly higher than those observed in the absence of noble gases. The abnormally high heats revealed by this work reach values from 3.5 to 6.1 times higher than the heats of formation of gaseous water from molecular hydrogen and oxygen.     

The synthesis and kinetic growth of anisotropic silver particles loaded on TiO2 surface by photoelectrochemical reduction method

Silver nanorods with average diameters of 120-230 nm and aspect ratio of 1.7-5.0 were deposited on the surface of TiO₂ films by photoelectrochemical reduction of Ag⁺ to Ag under UV light. The composite films prepared on soda-lime glass substrates were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The results show that the TiO₂ film after UV irradiation in AgNO₃ solution is composed of anatase phase TiO₂ and metallic silver with face centered cubic structure. Other compounds cannot be found in the final films. The maximum deposition content of silver particles on the surface of TiO₂ film was obtained with the AgNO₃ concentration of 0.1 M. The kinetic growth rates of silver particles can be controlled by photocatalytic activity of TiO₂ films. The studies suggest that the growth rates of silver particles increase with the enhancement of photocatalytic activity of TiO₂ films. The maximum growth rate of silver particles loaded on TiO₂ films can be up to 0.353 nm min⁻¹ among samples 1#, 2# and 3#, while the corresponding apparent rate constant of TiO₂ is 1.751 × 10⁻³ min⁻¹.     

Investigation of thin TiO2 films cosputtered with Si species

Titanium dioxide (TiO₂) films were fabricated by cosputtering titanium (Ti) target and SiO₂ or Si slice with ion-beam-sputtering deposition (IBSD) technique and were postannealed at 450 °C for 6 h. The variations of oxygen bonding, which included high-binding-energy oxygen (HBO), bridging oxygen (BO), low-binding-energy oxygen (LBO), and three chemical states of titanium (Ti⁴⁺, Ti³⁺ and Ti²⁺) were analyzed by X-ray photoelectron spectroscopy (XPS). The enhancement of HBO and reduction of BO in O 1s spectra as functions of SiO₂ or Si amount in cosputtered film imply the formation of Si-O-Ti linkage. Corresponding increase of Ti³⁺ in Ti 2p spectra further confirmed the property modification of the cosputtered film resulting from the variation of the chemical bonding. An observed correlation between the chemical structure and optical properties, refractive index and extinction coefficient, of the SiO₂ or Si cosputtered films demonstrated that the change of chemical bonding in the film results in the modification of optical properties. Furthermore, it was found that the optical properties of the cosputtered films were strongly depended on the cosputtering targets. In case of the Si cosputtered films both the refractive indices and extinction coefficients were reduced after postannealing, however, the opposite trend was observed in SiO₂ cosputtered films.     

Epitaxial growth of titanium oxide thin films on c-cut and α-cut sapphire substrates

C-cut and α-cut sapphire substrates are used to grow epitaxial titanium oxide films by pulsed-laser deposition at 700 °C under a controlled oxygen pressure in the 10⁻¹-10⁻⁵ mbar range. The rutile phase is evidenced in films whatever the substrate and the oxygen pressure while the anatase phase is only observed on c-cut sapphire substrate and for oxygen pressure down to 10⁻³ mbar. No other titanium oxide phases (i.e. TiO, Ti₂O₃ or Magneli phases) are identified despite the oxygen-deficiency observed in films grown at low oxygen pressure. According to asymmetric X-ray diffraction measurements performed on films, the main axis growth and the in-plane epitaxial relationships between titanium oxide films and sapphire substrates are found to be depending on the orientation of the sapphire basal plane and on the oxygen pressure. The anatase crystallites are highly oriented with the following epitaxial relationship . The rutile phase is (2 0 0) oriented on c-cut sapphire substrate and displays two distinct in-plane relationships: . The use of α-cut sapphire substrate leads to the growth of rutile crystallites (2 0 0) or (1 0 1) oriented. In these cases, the in-plane orientations are , respectively. For the two substrates used, schematic views of atomic arrangement of the different interfaces are proposed.     

Opto-electrical properties of Ti-doped In2O3 thin films grown by pulsed laser deposition

By ablating titanium containing In₂O₃ target with a KrF excimer laser, highly conducting and transparent films on quartz were obtained to investigate the effects of growth temperature and oxygen pressure on the structural, optical and electrical properties of these films. We find that the transparency of the films depends more on the growth temperature and less on the oxygen pressure. Electrical properties, however, are found to be sensitive to both the growth temperature and oxygen pressure. We report in this paper that a growth temperature of 500 °C and an oxygen pressure of 7.5 × 10⁻⁷ bar lead to titanium-doped indium oxide films which have high mobility (up to 199 cm² V⁻¹ s⁻¹), low resistivity (9.8 × 10⁻⁵ Ω cm), and relatively high transmittance (∼88%).