Nucleation mechanism and morphology evolution of MoS_2 flakes grown by chemical vapor deposition

We study the nucleation mechanism and morphology evolution of MoS_2 flakes grown by chemical vapor deposition(CVD)on SiO_2/Si substrates with using S and MoO_3 powders.The MoS_2 flake is of monolayer with triangular nucleation,which might arise from the initial MoO_3-xthat is deposited on the substrate,and then bonded with S to form MoS_2 flake.The ratio of Mo and S is higher than 1:2 at the beginning with Mo terminated triangular nucleation formed.After that,the morphology of MoS_2 flake evolves from triangle to similar hexagon,then to truncated triangle which is determined by the faster growth speed of Mo termination than that of S termination under the S rich environment.The nucleation density does not increase linearly with the increase of reactant concentration,which could be explained by the two-dimensional nucleation theory.     

Synthesis of flower-like WS2 by chemical vapor deposition

Flower-like tungsten disulfide (WS₂) with a diameter of 5-10 μm is prepared by chemical vapor deposition (CVD). Scanning electron microscopy (SEM), energy dispersive spectrometer (EDS), Raman spectroscopy, and ultraviolet-visible (UV-vis) spectroscopy are used to characterize its morphological and optical properties, and its growth mechanism is discussed. The key factors for the formation of flower-like WS₂ are determined. Firstly, the cooling process causes the generation of nucleation dislocations, and then the "leaf" growth of flower-like WS₂ is achieved by increasing the temperature.     

等离子体增强化学气相沉积法实现硅纳米线掺硼

用等离子体增强化学气相沉积(PECVD)方法成功实现硅纳米线的掺B.选用Si片作衬底，硅烷 （SiH4）作硅源，硼烷（B2H6）作掺杂气体， Au作催化剂，生长温度440℃.基于气-液-固(VLS)机制，探讨了掺B硅纳米线可能的生长机制.PECVD法化学成分配比更灵活，更容易实现纳米线掺杂，进一步有望生长硅纳米线pn结，为研制纳米量级器件提供技术基础. 关键词： 硅纳米线 化学气相沉积 纳米器件     

Characterization of atomic-layer MoS_2 synthesized using a hot filament chemical vapor deposition method

Atomic-layer MoS_2 ultrathin films are synthesized using a hot filament chemical vapor deposition method. A combination of atomic force microscopy(AFM), x-ray diffraction(XRD), high-resolution transition electron microscopy(HRTEM), photoluminescence(PL), and x-ray photoelectron spectroscopy(XPS) characterization methods is applied to investigate the crystal structures, valence states, and compositions of the ultrathin film areas. The nucleation particles show irregular morphology, while for a larger size somewhere, the films are granular and the grains have a triangle shape. The films grow in a preferred orientation(002). The HRTEM images present the graphene-like structure of stacked layers with low density of stacking fault, and the interlayer distance of plane is measured to be about 0.63 nm. It shows a clear quasihoneycomb-like structure and 6-fold coordination symmetry. Room-temperature PL spectra for the atomic layer MoS_2 under the condition of right and left circular light show that for both cases, the A1 and B1 direct excitonic transitions can be observed. In the meantime, valley polarization resolved PL spectra are obtained. XPS measurements provide high-purity samples aside from some contaminations from the air, and confirm the presence of pure MoS_2. The stoichiometric mole ratio of S/Mo is about 2.0–2.1, suggesting that sulfur is abundant rather than deficient in the atomic layer MoS_2 under our experimental conditions.     

一种简单的化学气相沉积法制备大尺寸单层二硫化钼

最近单层二硫化钼以其直接带隙的性质及在电子器件、催化、光电等领域中的潜在应用而备受关注.化学气相沉积法能够制备出高质量、大尺寸且性能优良的单层二硫化钼,但其制备工艺比较复杂.本文采用简化的化学气相沉积法在蓝宝石衬底上制备出了大尺寸的单晶二硫化钼.清洗衬底时,只需要简单的清洁,不需要用丙酮、食人鱼溶液(H_2SO_4/H_2O_2=3:1)等处理,这样既减少了操作步骤,又避免了潜在的危险.升温时直接从室温加热到生长的温度,不必分段升温,并且采用常压化学气相沉积法,不需要抽真空等过程,使得实验可以快捷方便地进行.光学显微镜、拉曼光谱和光致发光谱的结果表明,生长的二硫化钼为规则的三角形单层,边长为50μm左右,远大于机械剥离的样品.     

采用空心阴极放电等离子体化学气相沉积方法制备a-CH薄膜

 研究了不同衬底-阴极距离、直流电压和H₂流量对a-CH薄膜沉积速率的影响。结果表明：衬底-阴极距离必须大于0.5cm，随着该距离的增加，薄膜的沉积速率减少；直流电压达550V时沉积速率最大；随着H2含量的增加，CH₄含量相对减少，沉积速率随之降低。用AFM观察了以该方法制得的448.4nm CH薄膜的表面形貌，表面粗糙度约为10nm。最后测出了不同条件下CH薄膜的UV-VIS谱，由此可以计算得到薄膜的禁带宽度及折射率。     

Well-aligned ZnO nanowires grown on Si substrate via metal–organic chemical vapor deposition

ZnO nanowires were grown on silicon substrate by metal–organic chemical vapor deposition (MOCVD) without catalysts. The scanning electron microscopy (SEM) observations along with X-ray diffraction (XRD) results suggest that the ZnO nanowires are single crystals vertically well-aligned to silicon substrate. Room-temperature photoluminescence (PL) measurement reveals strong UV emission and weak green emission, which demonstrates that the nanowires are of good optical properties. The mechanism of the catalyst-free growth of ZnO nanowires on silicon substrate is proposed.     

Large-scale chemical vapor deposition growth of highly crystalline MoS2 thin films on various substrates and their optoelectronic properties

Large-scale growth of mostly monolayer molybdenum disulfide (MoS₂) on quartz, sapphire, SiO₂/Si, and waveguide substrates is demonstrated by chemical vapor deposition with the same growth parameters. Centimeter-scale areas with large flakes and films of MoS₂ on all the growth substrates are observed. The atomic force microscopy and Raman measurements indicate the synthesized MoS₂ is monolayer with high quality and uniformity. The MoS₂ field effect transistors based on the as-grown MoS₂ exhibit carrier mobility of 1–2 cm²V^?1s^?1 and On/Off ratio of ~10⁴ while showing large photoresponse. Our results provide a simple approach to realize MoS₂ on various substrates for electronics and optoelectronics applications.     

Atmospheric pressure chemical vapor deposition (APCVD) grown bi‐layer graphene transistor characteristics at high temperature

We report the characteristics of atmospheric chemical vapor deposition grown bilayer graphene transistors fabricated on ultra‐scaled (10 nm) high‐κ dielectric aluminum oxide (Al₂O₃) at elevated temperatures. We observed that the drive current increased by >400% as temperature increased from room temperature to 250 °C. Low gate leakage was maintained for prolonged exposure at 100 °C but increased significantly at temperatures >200 °C. These results provide important insights for considering chemical vapor deposition graphene on aluminum oxide for high temperature applications where low power and high frequency operation are required. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth behavior of Bi2Te3 and Sb2Te3 thin films on graphene substrate grown by plasma‐enhanced chemical vapor deposition

A comparative study of the substrate effect on the growth mechanism of chalcogenide Bi₂Te₃ and Sb₂Te₃ thin films was carried out. Obvious microstructural discrepancy in both the as‐deposited Bi₂Te₃ and Sb₂Te₃ thin films was observed when grown on graphene or SiO₂/Si substrate. Bi₂Te₃ and Sb₂Te₃ thin films deposited on the graphene substrate were observed to be grown epitaxially along c‐axis and show very smooth surface compared to that on SiO₂/Si substrate. Based on the experimental results of this study, the initial adsorption sites on graphene substrate during deposition process, which had been discussed theoretically, could be demonstrated empirically.     

采用空心阴极放电等离子体化学气相沉积方法制备a-CH薄膜

研究了不同衬底-阴极距离、直流电压和H2流量对a-CH薄膜沉积速率的影响。结果表明：衬底-阴极距离必须大于0.5cm,随着该距离的增加,薄膜的沉积速率减少;直流电压达550V时沉积速率最大;随着H2含量的增加,CH4含量相对减少,沉积速率随之降低。用AFM观察了以该方法制得的448.4nm CH薄膜的表面形貌,表面粗糙度约为10nm。最后测出了不同条件下CH薄膜的UV-VIS谱,由此可以计算得到薄膜的禁带宽度及折射率。     

化学气相沉积法制备定向碳纳米管阵列

以二茂铁和二甲苯分别作为催化剂和碳源，采用一种无模板的化学气相沉积法，使用单温炉设备，成功地制备了高度定向的碳纳米管阵列.分别用扫描电子显微镜、透射电子显微镜和电子能量散射谱、拉曼光谱对碳纳米管阵列进行形貌观察和表征, 并研究了不同工艺参数对碳纳米管阵列形貌的影响.结果表明：在生长温度为800℃，催化剂浓度为0.02g/mL，抛光硅片上容易获得高质量的定向碳纳米管阵列，在此优化条件下生长的定向碳纳米管的平均生长速率可达25μm/min.     

衬底对化学气相沉积法制备氧化硅纳米线的影响

通过化学气相沉积法在不同衬底上制备了大量的氧化硅纳米线.选用衬底为Si片、带有约100nm厚SiO2氧化层Si片和石英片.利用场发射扫描电子显微镜(SEM)和透射电镜(TEM，配备有能谱仪)对样品的表面形貌、结构和成分进行研究.结果表明：这些纳米线都为非晶态，但在不同衬底上生长的纳米线形貌、尺寸和化学成分不同.讨论了各种衬底对不同特征氧化硅纳米线生长的影响. 关键词： 化学气相沉积 纳米线 纳米颗粒     

场致发射阴极碳纳米管的热化学气相沉积法低温生长

结合丝网印刷和过滤阴极真空电弧法、离子束溅射方法，在普通玻璃衬底上制备催化剂图案，采用低温热化学气相沉积法(CVD)生长碳纳米管/纤维(CNTs)薄膜.研究了不同种类催化剂对CNTs薄膜生长及其场发射的影响.结果表明，在a-C:Co,Ni-Cu和Cu三种催化剂上没有获得明显的CNTs，在外加电场小于4.4V/μm时没有观察到场发射；而在Ni-Fe及Ni-Cr两种催化剂上获得了大量的CNTs，并且表现出良好的场发射性能，开启电场为2.5V/μm，这种热CVD有简单、低温等优点，在CNTs场发射显示器的阴极制备中有潜在的应用价值.     

Atmospheric pressure plasma treatment on graphene grown by chemical vapor deposition

We demonstrate the surface treatment of graphene using an atmospheric pressure plasma jet (APPJ) system. The graphene was synthesized by a thermal chemical vapor deposition with methane gas. A Mo foil and a SiO₂ wafer covered by Ni films were employed to synthesize monolayer and mixed-layered graphene, respectively. The home-built APPJ system was ignited using nitrogen gas to functionalize the graphene surface, and we studied the effect of different treatment times and interdistance between the plasma jet and the graphene surface. After the APPJ treatment, the hydrophobic character of graphene surface changed to hydrophilic. We found that the change is due to the formation of functionalities such as hydroxyl and carboxyl groups. Furthermore, it is worth noting that the nitrogen plasma treatment induced charge doping on graphene, and the pyridinic nitrogen component in the X-ray photoelectron spectroscopy spectrum was significantly enhanced. We conclude that the atmospheric pressure plasma treatment enables controlling the graphene properties without introducing surface defects.     

等离子体增强热丝CVD生长碳纳米尖端的研究

用CH₄，NH₃和H₂为反应气体，利用等离子体增强热丝化学气相沉积系统在不同偏压电流的条件下制备了碳纳米尖端，并用扫描电子显微镜和显微Raman光谱仪对碳纳米尖端进行了研究.结果表明碳纳米尖端是石墨结构，随着偏压电流的增大，碳纳米尖端的顶角减小，生长速率增大.结合有关等离子体和溅射的理论，分析讨论了碳纳米尖端的形成和碳纳米尖端的生长随偏压电流的变化. 关键词： 碳纳米尖端 等离子体 化学气相沉积     

Effects of annealing treatment on the formation of CO2 in ZnO thin films grown by metal-organic chemical vapor deposition

Post-growth annealing was carried out on ZnO thin films grown by metal-organic chemical vapor deposition (MOCVD). The grain size of ZnO thin film increases monotonically with annealing temperature. The ZnO thin films were preferential to c-axis oriented after annealing as confirmed by X-ray diffraction (XRD) measurements. Fourier transformation infrared transmission measurements showed that ZnO films grown at low temperature contains CO₂ molecules after post-growth annealing. A two-step reaction process has been proposed to explain the formation mechanism of CO₂, which indicates the possible chemical reaction processes during the metal-organic chemical vapor deposition of ZnO films.     

基于熔融玻璃的预沉积法生长毫米级单晶MoS2及WS2-MoS2异质结

MoS₂是一种具有优异光电性能和奇特物理性质的二维材料,在电子器件领域具有巨大的应用潜力.高效可控生长出大尺寸单晶MoS₂是该材料进入产业应用所必须克服的重大难关,而化学气相沉积技术被认为是工业化生产二维材料的最有效手段.本文介绍了一种利用磁控溅射预沉积钼源至熔融玻璃上,通过快速升温的化学气相沉积技术生长出尺寸达1 mm的单晶MoS₂的方法,并通过引入WO₃粉末生长出了二硫化钼与二硫化钨的横向异质结(WS₂-MoS₂).拉曼和荧光光谱仪测试表明所生长的样品具有较好的晶体质量.利用转移电极技术制备出了背栅器件样品并对其进行了电学测试,在室温常压下开关比可达10~5,迁移率可达4.53 cm~2/(V·s).这种低成本高质量的大尺寸材料生长方法为二维材料电子器件的大规模应用找到了出路.     

Electrical transport properties of graphene-covered-Cu wires grown by chemical vapor deposition

We investigated the field-effect transistor (FET) characteristics of 15-μm graphene-covered copper wires (G-wires). Unlike the previously reported graphene FET, carries initially showed p-type like FET characteristics in two-terminal transport measurements. Our results indicate that the electrical transport processes in a G-wire FET occur in both the heavily p-doped contact and the p-doped radial graphene channel, as a p-channel. The interfacial potential barrier between the contact electrode and the radial graphene channel is small, but there is a radial potential barrier that limits electrical transport through the copper core in chemical vapor deposition (CVD) grown samples. The p-type FET characteristics appeared clearly after the oxidation of the G-wires.