Thermal desorption and surface lifetimes of bromine and iodine adsorbed on an ionizer of LaB6

Thermal desorption of bromine and iodine from an ionizer surface made of cold pressed and sintered LaB₆ powder has been studien in the temperature interval 800–1300°C. A new technique, where the extraction field is accelerating only during short intervals, has been developed to monitor separately the neutral desorption of readily ionized elements. The technique has been combined with the modulated beam and the modulated voltage methods for measurements of residence times and ionization efficiencies. It has also been combined with the temperature programmed desorption method used for determination of the Arrhenius parameters of desorption. The following values were obtained for l_? and l₀, the activation energies of ionic and neutral desorption, and for the corresponding pre-exponential factors C and D (D = 4C) for halogens): Bromine: l_? = 3.8 eV, l₀ = 4.3 eV, C = 2.0 × 10¹³ s^?1; Iodine: l_? = 3.4 eV, l₀ = 3.7 eV, C = 1.1 × 10¹³ s^?1. The ionization efficiencies measured at 1100°C, 0.95 for bromine and 0.7 for iodine, correspond well to what is given by the Saha-Langmuie equation using a work function of 2.7 eV. All measurements were performed with the number of adsorbed particles well below 10¹⁷ atoms/m². For higher coverages l_? was found to increase linearly by about 0.15 eV for an adsorption of 10¹⁸ atoms/m².     

The atkermal stress component in neutron irradiated mild steel

Abstract

The temperature dependence of the tensile lower yield stress of an annealed aluminium grain size controlled mild steel has been investigated in the range 23–250 °C and at a strain rate of 1.67 × 10^?4 sec^?l before and after neutron irradiation to 2.3 × 10¹⁸ n/cm² (fission). The yield stress of the irradiated steel decreases with increasing temperature due to thermal activation of the radiation damage and is predicted to reach asymptotically that of the unirradiated steel at ～285 °C; the maximum test temperature was below that at which thermal annealing of the damage occurs. This implies that the athermal stress component due to irradiation is zero and hence there is negligible long range interaction between dislocations and radiation-induced defects.     

TSC study of electric dipole relaxations in chlorapatite

Electric dipole relaxations in chlorapatite, Ca₅(PO₄)₃Cl, have been studied with the fractional polarization mode of the thermally stimulated currents (TSC) method. Fifty-one of the fifty-seven sets of data obtained in the range 10–443°K fell naturally into four groups yielding compensation temperatures T_C of T_C1, = 202°C, T_C2: = 202°C, T_C3 = 420°C and T_C4= 644°C, with estimated error < 10°C, and characteristic relaxation times τ_C of τ_C1 = 1.3 × 10^?7s, τ_C2 = 3.2 × 10^?6s, τ_C3 = 8.8 × 10^?5s and τ_C4 = 2.3 × 10^?4s. Atomic-scale physical models involving Cl^? ion motion are offered for the 202°C compensation at the temperature of the reported monoclinic-to-hexagonal phase transition and for the 420°C compensation, at which temperature the Cl^? ions individually are thought to have enough thermal energy to maintain the hexagonal form dynamically.     

Investigation of irradiated and annealed high-temperature superconducting films with the Umka nanotechnological complex

Superconducting YBa₂Cu₃O_{7 ? x} films were fabricated by dc magnetron sputtering. They were irradiated with 1.2-MeV He⁺ ions to doses of 4 × 10¹⁵, 8 × 10¹⁵, 16 × 10¹⁵, and 32 × 10¹⁵ cm^?2. The irradiated films were subjected to stepwise (30 min per step) vacuum annealing at 500, 600, 700, 800, and 900°C. After vacuum annealing, the samples irradiated to doses of 4 × 10¹⁵, 8 × 10¹⁵, and 16 × 10¹⁵ cm^?2 exhibited partial recovery of their critical temperature, whereas the sample with a dose of 32 × 10¹⁵ cm^?2 exhibited no signs of partial recovery of T _C. Investigation of the irradiated annealed samples with the Umka nanotechnological complex has revealed damaged surface regions extended to a relatively large (several tenths of a micrometer) depth.     

Spray pyrolised Al/ZnO: Al heterojunction: Effect of Al on junction properties

Al/ZnO: Al heterojunction was fabricated by depositing ZnO: Al film on Al substrate by spray pyrolysis technique at 220 °C substrate temperature. XRD, SEM and EDAX techniques were used to study the properties of thin films. Heterojunction properties were studied by I–V and C–V measurements. The fabricated Al/ZnO: Al junctions were rectifying in character. The room temperature ideality factors of Al/ZnO: Al junctions are found to vary from 2.56 to 5.45. The reverse saturation currents are 5.21 × 10⁻⁹, 1.35 × 10⁻⁶, 1.99 × 10⁻⁶, 9.99 × 10⁻⁷ and 1.02 × 10⁻⁷ A for Al/ZnO: Al junctions. Junction forward current depends on doping concentrations and temperature, whereas reverse saturation current remains independent for Al concentration. The built-in-potential calculated from capacitance for Al/ZnO: Al junctions are 2.74, 2.60, 2.0, 2.50 and 2.43 V corresponding to 1, 2, 3, 4 and 5 mol% of Al. X-ray diffraction study confirmed that the films are polycrystalline, orientated in (0 0 2) plane. Scanning electron microscopy study confirmed circular ring patterns with inside ribbon type structure for Al doped ZnO films.     

Positron annihilation in electron-irradiated n-type gap crystals

Abstract

The defects in n-GaP crystals irradiated by 2.3 MeV electrons up to 1 × 10¹⁹ cm^?2 at RT were studied by means of positron annihilation (angular correlation) and electrical property measurements. It was found that positrons are trapped in some radiation-induced vacancy-type defects (acceptors) but that the effect saturates at high electron fluences (D1 × 10¹⁸ cm^?2). The trapping rate in irradiated samples increases with temperature in the range 77–300 K. Post-irradiation isochronal annealing reveals the positron traps clustering at about 200–280°C. All positron sensitive radiation-induced defects disappear upon annealing up to 500°C.     

Free-carrier absorption in p-type Pb0.79Sn0.21Te

Results are presented of the room-temperature absorption coefficient (α) of Pb_0.79Sn_0.21Te (p_77K = 2 × 10¹⁶-6 × 10¹⁷cm^-3) in wavelength (λ) range 6–15 μm. At long wavelengths α exhibits a λ² dependence, in agreement with the classical free-carrier absorption expression, and in this region α is proportional to carrier density.     

Effect of annealing on the electronic parameters of Au/poly(ethylmethacrylate)/n-InP Schottky diode with organic interlayer

A thin poly(ethylmethacrylate) (PEMA) layer is deposited on n-InP as an interlayer for electronic modification of Au/n-InP Schottky structure. The electrical properties of Au/PEMA/n-InP Schottky diode have been investigated by current–voltage (I–V) and capacitance–voltage (C–V) measurements at different annealing temperatures. Experimental results show that Au/PEMA/n-InP structure exhibit a good rectifying behavior. An effective barrier height as high as 0.83 eV (I–V) and 1.09 eV (C–V) is achieved for the Au/PEMA/n-InP Schottky structure after annealing at 150 °C compared to the as-deposited and annealed at 100 and 200 °C. Modified Norde's functions and Cheung method are also employed to calculate the barrier height, series resistance and ideality factors. Results show that the barrier height increases upon annealing at 150 °C and then slightly decreases after annealing at 200 °C. The PEMA layer increases the effective barrier height of the structure as this layer creates a physical barrier between the Au metal and the n-InP. Terman's method is used to determine the interface state density and it is found to be 5.141 × 10¹² and 4.660 × 10¹² cm^?2 eV^?1 for the as-deposited and 200 °C annealed Au/PEMA/n-InP Schottky diodes. Finally, it is observed that the Schottky diode parameters change with increasing annealing temperature.     

Ionic conduction of γ-titanium phosphate in hydrogen and alkali metal salt forms

Impedances of compact discs of anhydrous γ-titanium phosphate and some ofits salt forms were measured in the temperature range of 100–300°C, while the corresponding hydrated forms were investigated between -20 and +25°C. Either at low or high temperature the impedance plots are consistent with a parallel combination of a conductance, a capacitance and a constant phase angle admittance. Anhydrous compounds have lower conductivities (σ_300°C=10^-4–10^-6ω^-1cm^-1) and higher activation energies (E_a = 13.9–20.7 kcal/mol) than those of the corresponding hydrated ones (σ_25°C = 10^-3–10^-5ω^-1cm^-1 and E_a = 2–10 kcal/mol); however, in both cases, the activation energy increases with increasing ionic radius. The values of the ion diffusion coefficients for hydrated forms (10^-8–10^-9 cm²/s), computed at 25°C by the Nernst-Einstein equation, are considerably higher than those obtained by self diffusion experiments. This seems to indicate that the conductivity is essentially due to hydrated cations present on the surface of the microcrystals.     

Effect of electrode material on the photoconduction behaviour of ion-irradiated kapton-H polyimide

Photoconduction behaviour of 75 MeV oxygen ion-irradiated (fluence: 1.8×10¹³ ions/cm²) kapton-H polyimide film in the visible region has been investigated for different electrode materials at various operating temperatures ranging 40–250 °C and at different electric fields (40–400 kV/cm). A photoinduced exciton formation is the major source for providing charge carriers through thermolization and field-assisted dissociation processes. A decrease in the photocurrent in ion-irradiated samples when compared with pristine samples has been associated with the enhancement in the trapping sites, which may deplete the charge carriers and a loss in the photoactive groups owing to radiation-induced demerization. The evidence of Schottky type conduction (based on Schottky's coefficient estimation) mechanism in irradiated samples is observed at moderate temperatures (80–160 °C). A strong dependence of photocurrent on temperature in irradiated samples reconfirms the thermal ionization process of exciton for photogeneration of charge carriers.     

An application of oxide and silver electrode on the BaO-doped Bi2O3 electrolyte

Oxide and silver paste were applied on the BaO-doped Bi₂O₃ electrolyte and their behavior was studied as a function of temperature and oxygen partial pressure. Interface resistance of most oxide/electrolyte were of the same order of magnitude with those of Ag paste/electrolyte in air (300–500°C). A high electrode capacitance of (0.8–1.7)×10^?2 F/cm² was observed for the silver electrode at 450°C in the P_O2 region of 1–10^?5 atm.     

Protonic conductivity of β″ and ion-rich β-alumina. II: Ammonium compounds

The conductivity and thermal stability of NH⁺₄, H⁺(H₂O)_nβ″ and ion-rich β-alumina single crystals have been measured by the complex impedance method in the 25–700°C temperature range. Both structures have similar properties, but ion-rich β-alumina shows a higher stability and a lower activation energy (β: 0.18 eV, β″ 0.24 eV below 400°C and 250°C respectively). The room temperature conductivity is about 3×10^-5ω^-1cm^-1. The conducting properties and mechanisms are discussed and compared to other protonic or ionic conductors.     

Temperature dependence of the radiation-induced hardening of EP-823 steel after 7-MeV Ni++-ion irradiation

Ferritic-martensitic steel 16Kh12MVSFBR (EP-823) is irradiated with 7-MeV Ni⁺⁺ ions to fluences in the range of (2.7–6) × 10²⁰ ion/m² at temperatures of 350–600°C. The obtained temperature dependence of steel hardening after irradiation has a non-monotonic character with a maximum at 380°C. This dependence is determined by changes in the steel microstructure with irradiation temperature and correlates with the known experimental data on neutron irradiation and results of mathematical-statistical simulation using the bootstrap procedure and a neural-network model of changes in the strength properties of 12% chromium steels of the ferritic-martensitic class after neutron irradiation.     

Synthesis and electric properties of perovskite Pr0.6Ca0.4Fe0.8Co0.2O3 for SOFC applications

In this study, polycrystalline powder Pr_0.6Ca_0.4Fe_0.8Co_0.2O₃ (PCFC) was synthesized by a sol–gel process. This oxide was analyzed by X-ray powder diffraction. Synthesized Pr_0.6Ca_0.4Fe_0.8Co_0.2O₃ showed up to be single phase and belongs to the orthorhombic crystalline system with a Pbnm space group. The microstructural features of the synthesized products display particles having an irregular morphology and a size in the range of 50–100 nm. X-ray diffraction (XRD) analysis shows the chemical compatibility between the PCFC cathode and the electrolyte Sm-doped ceria since no reaction products were honored when the material was mixed and co-fired at 1,000 °C for 168 h. The thermal expansion coefficient of PCFC 16.9?×?10^?6 °C^?1 is slightly higher than that of Ce_0.8Sm_0.2O_1.9 (SDC) over the studied temperature range. The greater contribution to the total resistance of the electrode is the electrochemical resistance associated with oxygen exchange in the cathode surface (0.96 Ωcm²). The dc four-probe measurement indicated that PCFC exhibits fairly high electrical conductivity, over 100 S cm^?1 at T?≥?500 °C, making this material promising as a cathode material for intermediate temperature solid oxide fuel cells.     

Adiabatic elastic moduli in ZnSe : Mn<Superscript>2+</Superscript> and ZnSe : V<Superscript>2+</Superscript> crystals

The temperature dependences of the elastic moduli C ₄₄ (C ₁₁ ? C ₁₂)/2 and C _l = (C ₁₁ + C ₁₂ + 2C ₄₄)/2 of ZnSe : V²⁺ (impurity concentration, 6 × 10¹⁸ cm^?3) and ZnSe : Mn²⁺ (9.4 × 10²⁰ cm^?3) are measured in the temperature range 1.4–100.0 K at frequencies of 52 and 156 MHz. The temperature dependences of the adiabatic elastic moduli are derived. It is established that softening of the symmetry modules is observed only in the crystal with an impurity having orbitally degenerate states.     

Raman scattering of neutron irradiated 6H-SiC

Confocal micro-Raman spectroscopy was preformed to investigate the structural damage of SiC neutron irradiated with the fluences of 1.72×10¹⁹ and 1.67×10²⁰ n/cm². In addition to characteristic peaks, several additional signals related to Si–Si, Si–C, and C–C vibration modes were monitored. The vibration mode associated with C_SiV _C complexes was identified to be the unambiguous peak at 575 cm^?1 which appears initially in the sample post-irradiation annealed at 800 °C. The defect-induced phonon confinement effect results in an asymmetric broadening with a low-frequency tail of the optical phonon peaks. The sigmoidal thermal recovery behavior of the optical phonon frequencies indicates that the reduction of FLO_0/6–FTO_2/6 splitting originates mainly from the isolated vacancies and interstitials.     

Electrical characterization of porous La-doped BaSnO<Subscript>3</Subscript> using impedance spectroscopy

A few compositions in the system Ba_1???x La _x SnO₃ (x?=?0.00, 0.01, 0.05, and 0.10) have been synthesized via the solid state ceramic route. The synthesized powders have been characterized using X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray analysis, Raman spectroscopy, Fourier transformation infrared, thermogravimetrical analysis, and differential thermal analysis techniques. The powder X-ray diffraction pattern of the samples confirms the formation of a single-phase solid solution only up to 0.50?≤?x. It was found that all the samples have a cubic crystal structure. The electrical properties of La-modified BaSnO₃ were studied using ac impedance spectroscopy technique over a wide range of temperatures (50–650 °C) in the frequency range of 10 Hz–13 MHz. The complex impedance plots above 300 °C show that total impedance is due to the contributions of grain and grain boundaries. The resistance of these contributions has been determined. Variation of these resistances with temperature shows the presence of two different regions with different slopes. The nature of the variation of conductivity of the grain and grain boundaries is different in different regions. Based on the value of activation energy, it is proposed that conduction via hopping of doubly ionized oxygen vacancies (V_O ^??) is taking place in the temperature region of 300–450 °C, whereas in the temperature region of 450–650 °C, it is due to proton, i.e., OH^? ions, hopping.     

Influence of the magnetic phase transition on secondary ion emission from disordered Ni-Pd compounds of various compositions

Variations in secondary ion emission (SIE) from polycrystals of ferromagnetic disordered Ni-Pd compounds irradiated by argon ions with energy of 10 keV are studied experimentally. A considerable reduction in Ni⁺ and Pd⁺ ion emission upon transitioning from the ferromagnetic to the paramagnetic state is revealed for the following Ni-Pd compounds with various Curie points T _C: NiPd (T _C = 190°C), Ni₅Pd (T _C = 315°C), and NiPd₅ (T _C = 110°C). The observed reduction in SIE is attributed to variations in the surface binding energy and the density of electron states near the Fermi level.     

Swift heavy ion provoked structural, optical and electrical properties in SnO2 thin films

SnO₂ thin films grown on glass substrates at 300 ^°C by reactive thermal evaporation and annealed at 600 ^°C were irradiated by 120 MeV Ag⁹⁺ ions. Though irradiation is known to induce lattice disorder and suppression of crystallinity, we observe grain growth at a certain fluence of irradiation. X-ray diffraction (XRD) revealed the crystalline nature of the films. The particle size estimated by Scherrer’s formula for the irradiated films was in the range 10–25 nm. The crystallite size increases with increase in fluence up to 1×10¹² ions?cm^?2, whereas after that the size starts decreasing. Atomic force microscope (AFM) results showed the surface modification of nanostructures for films irradiated with fluences of 1×10¹¹ ions?cm^?2 to 1×10¹³ ions?cm^?2. The UV–visible spectrum showed the band gap of the irradiated films in the range of 3.56 eV–3.95 eV. The resistivity decreases with fluence up to 5×10¹² ions?cm^?2 and starts increasing after that. Rutherford Backscattering (RBS) reveals the composition of the films and sputtering of ions due to irradiation at higher fluence.     

Characterization of silicon doped with sodium upon high-voltage implantation

The depth distribution profiles of sodium atoms in silicon upon high-voltage implantation (ion energy, 300 keV; implantation dose, 5 × 10¹⁴ and 3 × 10¹⁵ cm ^?2) are investigated before and after annealing at temperatures in the range T _ann = 300–900°C (t _ann = 30 min). Ion implantation is performed with the use of a high-resistivity p-Si (ρ= 3–5 kΩ cm) grown by floating-zone melting. After implantation, the depth distribution profiles are characterized by an intense tail attributed to the incorporation of sodium atoms into channels upon their scattering from displaced silicon atoms. At an implantation dose of 3 × 10¹⁵ ions/cm², which is higher than the amorphization threshold of silicon, a segregation peak is observed on the left slope of the diffusion profile in the vicinity of the maximum after annealing at a temperature T _ann = 600°C. At an implantation dose of 5 × 10¹⁴ ions/cm², which is insufficient for silicon amorphization, no similar peak is observed. Annealing at a temperature T _ann = 700°C leads to a shift of the profile toward the surface of the sample. Annealing performed at temperatures T _ann ≥ 800°C results in a considerable loss of sodium atoms due to their diffusion toward the surface of the sample and subsequent evaporation. After annealing, only a small number of implanted atoms that are located far from the region of the most severe damages remain electrically active. It is demonstrated that, owing to the larger distance between the diffusion source and the surface of the sample, the superficial density of electrically active atoms in the diffusion layer upon high-voltage implantation of sodium ions is almost one order of magnitude higher than the corresponding density observed upon low-voltage implantation (50–70 keV). In this case, the volume concentration of donors near the surface of the sample increases by a factor of 5–10. The measured values of the effective diffusion parameters of sodium at annealing temperatures in the range T _ann = 525–900°C are as follows: D ₀ = 0.018 cm²/s and E _a = 1.29 eV/kT. These parameters are almost identical to those previously obtained in the case of low-voltage implantation.