Modification of plasma-etched profiles by sputtering

Two-dimensional etch profiles are modeled for plasma etching. The etch rate dependence on the angle of incidence of the bombarding ions on the etched surface has a sputtering-type yield. The etch profile is advanced in time by an evolution equation for an etch rate proportional to the modified ion energy flux. Approximate analytical expressions for the etch rates are derived as a product of the etch rates in the absence of the sputtering-type yield and a weighting factor that depends on the angle the ion drift velocity makes with the normal to the wafer surface. The weighting factor is determined from experimental measurements of the angular dependence of ion beam etching by sputtering. These etch rates are valid when the ratio of the ion drift speed to the ion thermal speed is large compared to one. The etching is modeled in the ion flux-limited regime for simplicity. The modifications of the shape of etch profiles of a long rectangular trench and a waveguide structure or strip are treated     

Computation of etched track profiles in CR-39 and comparison with experimental results for light ions of different kinds and energies

Computation of etched track profiles needs the knowledge of the variable track etch rates along the ion trajectories. Using the depth-dependent track etch rates experimentally determined for perpendicularly incident protons, deuterons and alpha particles as well as ⁷Li, ¹¹B, ¹²C, ¹⁴N and ¹⁶O ions of different energies simulations of the track development were performed. Two models of track etching were applied for that purpose recently published in literature. Although the models are based on the same physical fundamentals the results are slightly different. The reasons of the discrepancies were found by analysing the algorithms in detail. Comparison of the calculated track profiles with those determined experimentally from longitudinal sections of the etch pits showed good agreement for non-overetched as well as overetched tracks. The consistency of the whole experimental data set was checked by analysing the correlation of the track etch rates with geometric track parameters for all kinds of ions and etching times covered by the experiments.     

Diagnostics of Low-Pressure Oxygen RF Plasmas and the Mechanism for Polymer Etching: A Comparison of Reactive Sputter Etching and Magnetron Sputter Etching

We have compared low-pressure oxygen RF plasmas and the etching of photoresist in a reactive sputter etch reactor and in a magnetron etch reactor using Langmuir probe, optical emission actinometry, and mass spectrometry measurements. The Langmuir probe data allow the determination of the plasma ion density and electron temperature, and thus the ion flux onto the substrate. The optical data yield information on the presence of O atoms and O2+ ions. Stable reactant and product species are monitored with a mass spectrometer. The main difference between the two reactors is that in magnetron sputter etching (MSE), the ion flux to the substrate is about an order of magnitude higher, under comparable plasma conditions, than in reactive sputter etching (RSE). This accounts for the higher etch rate in MSE. However, the etch yield per ion is higher in RSE because of the higher ion energy. Etch rates correlate neither with the ion flux to the substrate nor with the density of O atoms in the plasma, but change in parallel with the consumption of reactant gas. We conclude that in etching a polymer in a low-pressure oxygen plasma, the main neutral reactant species are O2 molecules, and an important role of the ions is to remove reaction products from the substrate surface.     

Track etch rates along the trajectories of nitrogen and oxygen ions in CR-39

Experimental studies on track etch rates in CR-39 performed with protons, deuterons and alpha particles as well as ⁷Li, ¹¹B and ¹²C ions were extended to ¹⁴N and ¹⁶O ions. The results are compatible with the general systematics found for the dependence on the kind of ion and its initial energy. Analysing the etch rate ratios as function of the restricted energy loss (REL), the non-existence of a unique relationship has been confirmed. However, assuming a dependence of the etch rate ratio not only on REL, but also on the depth within the detector where a given REL value occurs, all experimental data could be adjusted. The experiments with ¹⁴N and ¹⁶O ions allow extension of the REL range studied up to about 14 000 MeV/cm. The whole area relevant to neutron-induced charged particles generated within the CR-39 detectors is covered thereby. Having added the data for ¹⁴N and ¹⁶O ions, the array of curves for the etch rate ratio could be expanded up to 14 000 MeV/cm without inconsistencies, demonstrating the compatibility of the new data set also quantitatively.     

The Calculations of the Concentrations,of the Radial Distributions,and of the Radial Particle Currents of Excited and of Doubly Charged Ions in Low Pressure Discharges

A system of differential equations describing the radial profiles of the number densities and of the radial drift velocities of the ions and of the electrons in positive columns at low pressure containing several species of ions is derived. Excited ions and doubly charged ions, generated in two-step processes by electron impacts, the inertia of the ions and space charge effects are taken into account. For the excited ions de-excitation processes by electron collisions and by spontaneous emission are regarded. A set of nonlinear equations to determine the population densities and the initial values of the differential equations and corresponding boundary conditions are put up. Numerical solutions are given for discharges in argon under free-fall conditions similiar to argon ion lasers. One notices that without stepwise processes via excited ion levels the concentration of double charged ions remains small. In some cases the radial drift of the ions considerably reduces the population of the metastable ion levels. The radial density profiles of the double charged ions and of long-living excited ions considerably deviate from the squared radial profile of the electron density. In addition, for low degrees of ionization the theory of the free-fall column given by Tonks and Langmuir is extended to plasmas containing two species of ions.     

Energy transport in plasma etching of nanoporous dielectric materials

A Monte Carlo routine was developed to simulate the motion and energetics of ions in the pores of a xerogel material under plasma etching conditions. The simulation included the effects of an applied electric field and input conditions for the pore as a function of pressure and applied voltage in the plasma reactor. We were interested in the ion energy in a pore, the ion penetration depth and the effect of ion energy on etching.At low pressures the nanoporous material etches faster than dense silicon dioxide. This is to be expected given the decrease in density and increase in surface area that arises due to the porosity. However, as the pressure is increased, the etch rate decreases dramatically and, eventually, the dense oxide may etch faster than the porous material. CHF₃ was used as the etchant gas and, for this gas, we believe this behavior to be controlled by the ion energy and energy transport in the pores of the xerogel material. As the pressure in the plasma reactor is increased, the incoming ions switch over from etching activation to polymerisation activation. This agrees with the observed crossover in etch rate seen experimentally and with the cessation in etching as pressure is increased. The switch is affected by pore roughness and correlates with the average ion energy in the pore.     

Comparison of plasma chemistries for the dry etching of bulk single-crystal zinc-oxide and rf-sputtered indium-zinc-oxide films

The dry etching characteristics of bulk, single-crystal zinc-oxide (ZnO) and rf-sputtered indium-zinc-oxide (IZO) films have been investigated using an inductively coupled high-density plasma with different plasma chemistries. The introduction of interhalogens such as ICl, IBr, BI₃, and BBr₃ to the Ar plasma produced no enhancement of the ZnO and IZO etch rates with respect to physical sputtering in a pure argon atmosphere under the same experimental conditions. In these plasma chemistries, the etch rate of both materials increased with source power and ion energy, indicating that ion bombardment plays an important role in enhancing desorption of etch products. Except in Ar/CH₄/H₂ discharges, the ZnO etch rate was very similar to that of IZO, which indicates that zinc and indium atoms are driven by a similar plasma etching dynamic. CH₄/H₂-containing plasmas produced higher etch rates for IZO than for ZnO due to the preferential desorption of the group III etch products. Application of the CH₄/H₂/Ar plasma to the etching of deep features in bulk, single-crystal ZnO produced highly anisotropic profiles although some trenches were observed near the sidewalls.     

Two-dimensional direct simulation Monte Carlo (DSMC) of reactiveneutral and ion flow in a high density plasma reactor

We present a two dimensional direct simulation Monte Carlo (DSMC) study of the rarefied reactive flow of neutrals and ions in a low pressure inductively coupled plasma reactor. The spatially-dependent rate coefficients of electron impact reactions and the electrostatic field were obtained from a fluid plasma simulation. Neutral and ion etching of polysilicon with chlorine gas was studied with emphasis on the reaction uniformity along the wafer. Substantial gradients in total gas density were observed across the reactor invalidating the commonly made assumption of constant gas density. The flow was nonequilibrium with differences in the species translational temperatures, and 100 K temperature jumps near the walls. When etching was limited by ions the etch rate was highest at the wafer center. When etching was limited by neutrals, the etch rate was highest at the wafer edge. In such case, the etch uniformity changed significantly depending on the reactivity of the ring surrounding the wafer. The ion angular distribution was several degrees off normal and it was different at the wafer edge compared to the rest of the wafer     

Modulation instability of lower hybrid waves leading to cusp solitons in electron–positron(hole)–ion Thomas Fermi plasma

Following the idea of three‐wave resonant interactions of lower hybrid waves, it is shown that quantum‐modified lower hybrid (QLH) wave in electron–positron–ion plasma with spatial dispersion can decay into another QLH wave (where electron and positrons are activated, whereas ions remain in the background) and another ultra‐low frequency quantum‐modified ultra‐low frequency Lower Hybrid (QULH) (where ions are mobile). Quantum effects like Bohm potential and Fermi pressure on the lower hybrid wave significantly reshaped the dispersion properties of these waves. Later, a set of non‐linear Zakharov equations were derived to consider the formation of QLH wave solitons, with the non‐linear contribution from the QLH waves. Furthermore, modulational instability of the lower hybrid wave solitons is investigated, and consequently, its growth rates are examined for different limiting cases. As the growth rate associated with the three‐wave resonant interaction is generally smaller than the growth associated with the modulational instability, only the latter have been investigated. Soliton solutions from the set of coupled Zakharov and NLS equations in the quasi‐stationary regime have been studied. Ordinary solitons are an attribute of non‐linearity, whereas a cusp soliton solution featured by nonlocal nonlinearity has also been studied. Such an approach to lower hybrid waves and cusp solitons study in Fermi gas comprising electron positron and ions is new and important. The general results obtained in this quantum plasma theory will have widespread applicability, particularly for processes in high‐energy plasma–laser interactions set for laboratory astrophysics and solid‐state plasmas.     

Two-dimensional simulation of polysilicon etching with chlorine ina high density plasma reactor

A two-dimensional fluid simulation of polysilicon etching with chlorine in an inductively-coupled high density plasma source is presented. A modular approach was used to couple in a self-consistent manner the disparate time scales of plasma and neutral species transport. This way, complex plasma chemical reactions (involving electrons, ions and neutrals) as well as surface chemistry can be included in the simulation, The power deposited into the plasma was calculated by an electromagnetics module which solves Maxwell's equations. The power deposition was used in the electron energy module to find the electron temperature and the rate coefficients of electron-impact reactions. These were in turn used as source terms in separate neutral and charged species transport modules. By iterating among the modules, a self-consistent solution was obtained. Quantities of interest, such as power deposition, species density and flux, and etch rate and uniformity were thus calculated, As power deposition was increased, the electron density increased linearly, the plasma became less electronegative, the degree of gas dissociation increased, and the plasma potential remained constant. The radial uniformity of the Cl atom flux was better than that of the ion flux. The reactivity of the wafer as compared to that of the surrounding electrode surface significantly affected the etch uniformity, despite the low pressure of 10 mtorr     

Real-time ab initio simulations of excited carrier dynamics in carbon nanotubes

Combining time-dependent density functional calculations for electrons with molecular dynamics simulations for ions, we investigate the dynamics of excited carriers in a (3,3) carbon nanotube at different temperatures. Following an hnu=6.8 eV photoexcitation, the carrier decay is initially dominated by efficient coupling to electronic degrees of freedom. At room temperature, the excitation gap is reduced to nearly half its initial value after approximately 230 fs, where coupling to ionic motion starts dominating the decay. We show that the onset point and damping rate in the phonon regime change with initial ion velocities, a manifestation of temperature-dependent coupling between electronic and ionic degrees of freedom.     

High energy heavy ion tracks in bubble detectors

Bubble detectors which are commonly used as neutron detectors have been demonstrated through this study to be good detectors for registration of high energy heavy ion tracks. Large size bubble detectors made in China Institute of Atomic Energy were irradiated to heavy ions Ar and C up to 650 MeV/u and 400 MeV/u, respectively. Very clear features of stringy tracks of high energy heavy ions and their fragmentations are manifested and distinguishable. A single track created by a specific high energy heavy ion is composed of a line of bubbles, which is visible by naked eyes and retained for months wihhout reduction in size. The creation of heavy ion tracks in bubble detectors is governed by a threshold whose essence is approximately a critical value of energy loss rate (dE/dX)_c similar to that of etch track detectors. Ranges of heavy ions in bubble detectors are apparent and predictable by existing formulas. Identification of high energy heavy ions and the applications to heavy ion physics, cosmic rays, exotic particles and cancer therapy monitoring are obviously promising. The experimental and theoretical aspects of high energy heavy ion tracks in bubble detectors as well as the expectable applications are presented and discussed.     

Spatial distribution profiles of defects in cadmium-mercury-tellurium after ion implantation

Defect spatial distributions are investigated after implantation of ions in Cd_xHg_1−xTe under various sets of conditions (radiation dose, type and energy of ions, ion current density, and dose absorption rate). Distribution profiles of electrically active radiation-induced defects are calculated with allowance for the generation of defect complexes of vacancion nature. Defect profiles are determined in experiments after implantation of hydrogen and iron ions at constant low ion current densities, and after implantation of copper, tungsten, and aluminum ions in the case of pulsed bombardment at high ion current densities. Secondary-ion mass spectrometry, electron-positron annihilation, Rutherford backscattering of ions, and differential Hall measurements are used to obtain distribution profiles of interstitial ions, vacancion and extended defects, and electrically active defects, respectively. The profiles of these defects are analyzed for various ion-implantation conditions. V. D. Kuznetsov Siberian Physicotechnical Institute at Tomsk State University Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 101–116, January, 1998.     

Carrier removal by implanted IONS in GaAs

Abstract

A model for calculation of the range distribution of energetic ions with taking into account the channeling effect is proposed. The measurement of the depth distributions of boron ions in silicon crystals implanted at 13.6 and 91 MeV revealed significant difference between the measured and the calculated range profiles when the channeling effects have not been included in the calculation. In spite of deminishing the critical angles of channeling with growing ion energy the probability of the capture of ions into the channeling regime is significant in case of high energy implantation even when the incident angles are 7–10° off the main crystallographic directions.     

Annealing of heavy ion tracks in cellulose nitrate plastic track detectors

The effect of heat treatment on the latent tracks in cellulose nitrate plastic track detectors has been studied. The bulk etch rate increases with annealing temperature while the track diameters of different ions in cellulose nitrate decrease with increase in annealing time and temperature. Experimental results show that for heavier ions higher temperatures are needed for their complete erasure. The track length and track etch rate are decreased by the application of heat. Experiments reveal that annealing reduces track density. The vertical tracks are more stable than the oblique tracks and require higher temperature for their complete erasure.     

Calibration of PM-355 nuclear track detectors; comparison of track diameter diagrams with track depth characteristics

The calibration diagrams, i.e. track diameters and track depths versus ion energy and etching time, as obtained for PM-355 track detector irradiated with He-ions are presented. The both detector characteristics are compared. The track etch rate is determined by two methods, as a function of the etch pit depth and the ion energy loss.     

Theoretical Description of the Radial Distributions of the Ions and of the Electrons in the Subnormal Positive Column

A relatively simple set of differential equations describing the radial profiles of the number densities and of the radial drift velocities of the ions and the electrons and of the radial electric field intensity in the subnormal positive column is derived. The inertia of the ions is taken into consideration, but the ion temperature is supposed to be zero. Corresponding boundary conditions are used. For discharges in argon under diffusion and under free-fall conditions numerical solutions are given.     

Direct determination of track etch rate and response of CR-39 to normal incidence high-energy heavy ions

Response of CR-39 to high-energy heavy ions was investigated by using optical microphotographs of track profiles for Ar (480 MeV/n) and Ni (300 MeV/n). The depth dependence of track etch rate (V_T) was determined experimentally by track length measurement. The results indicate that V_T for the low REL Ar tracks is depth independent but for the high REL Ni tracks V_T is gradually decreasing with depth. The region beyond 30 μm depth inside the detector shows a stable region regarding the detector response for both ions.     

Scaling laws for the spatial distributions of the plasma parameters in the positive column of a dc oxygen discharge

Comprehensive self-consistent simulations of the positive column plasma of a dc oxygen discharge are performed with the help of commercial CFDRC software (), which enables one to carry out computations in an arbitrary 3D geometry using fluid equations for heavy components and a kinetic equation for electrons. The main scaling laws for the spatial distributions of charged particles are determined. These scaling laws are found to be quite different in the parameter ranges that are dominated by different physical processes. At low pressures, both the electrons and negative ions in the inner discharge region obey a Boltzmann distribution; as a result, a flat profile of the electron density and a parabolic profile of the ion density are established there. In the ion balance, transport processes prevail, so that ion heating in an electric field dramatically affects the spatial distribution of the charged particles. At elevated pressures, the volume processes prevail in the balance of negative ions and the profiles of the charged particle densities in the inner region turn out to be similar to each other.