VAMAS interlaboratory study on organic depth profiling

We present the results of a VAMAS (Versailles project on Advanced Materials and Standards) interlaboratory study on organic depth profiling, in which twenty laboratories submitted data from a multilayer organic reference material. Individual layers were identified using a range of different sputtering species (C₆₀ⁿ⁺, Cs⁺, SF₅⁺ and Xe⁺), but in this study only the C₆₀ⁿ⁺ ions were able to provide truly ‘molecular’ depth profiles from the reference samples. The repeatability of profiles carried out on three separate days by participants was shown to be excellent, with a number of laboratories obtaining better than 5% RSD (relative standard deviation) in depth resolution and sputtering yield, and better than 10% RSD in relative secondary ion intensities. Comparability between laboratories was also good in terms of depth resolution and sputtering yield, allowing useful relationships to be found between ion energy, sputtering yield and depth resolution. The study has shown that organic depth profiling results can, with care, be compared on a day‐to‐day basis and between laboratories. The study has also validated three approaches that significantly improve the quality of organic depth profiling: sample cooling, sample rotation and grazing angles of ion incidence. © Crown copyright 2010.     

New horizons in sputter depth profiling inorganics with giant gas cluster sources: Niobium oxide thin films

X‐ray photoelectron spectroscopy is used to study a wide variety of material systems as a function of depth (“depth profiling”). Historically, Ar⁺ has been the primary ion of choice, but even at low kinetic energies, Ar⁺ ion beams can damage materials by creating, for example, nonstoichiometric oxides. Here, we show that the depth profiles of inorganic oxides can be greatly improved using Ar giant gas cluster beams. For NbO_x thin films, we demonstrate that using Ar_x⁺ (x = 1000‐2500) gas cluster beams with kinetic energies per projectile atom from 5 to 20 eV, there is significantly less preferential oxygen sputtering than 500 eV Ar⁺ sputtering leading to improvements in the measured steady state O/Nb ratio. However, there is significant sputter‐induced sample roughness. Depending on the experimental conditions, the surface roughness is up to 20× that of the initial NbO_x surface. In general, higher kinetic energies per rojectile atom (E/n) lead to higher sputter yields (Y/n) and less sputter‐induced roughness and consequently better quality depth profiles. We demonstrate that the best‐quality depth profiles are obtained by increasing the sample temperature; the chemical damage and the crater rms roughness is reduced. The best experimental conditions for depth profiling were found to be using a 20 keV Ar₂₅₀₀⁺ primary ion beam at a sample temperature of 44°C. At this temperature, there is no, or very little, reduction of the niobium oxide layer and the crater rms roughness is close to that of the original surface.     

Site Preference of Cations and Structural Variation in MgAl2–xGaxO4 (0 ≤ x ≤ 2) Spinel Solid Solution

The crystal structures of MgAl_2–xGa_xO₄ (0 ≤ x ≤ 2) spinel solid solutions (x = 0.00, 0.38, 0.76, 0.96, 1.52, 2.00) were refined using ²⁷Al MAS NMR measurements and single crystal X‐ray diffraction technique. Site preferences of cations were investigated. The inversion parameter (i) of MgAl₂O₄ (i = 0.206) is slightly larger than given in previous studies. It is considered that the difference of inversion parameter is caused by not only the difference of heat treatment time but also some influence of melting with a flux. The distribution of Ga³⁺ is little affected by a change of the temperature from 1473 K to 973 K. The degree of order‐disorder of Mg²⁺ or Al³⁺ between the fourfold‐ and sixfold‐coordinated sites is almost constant against Ga³⁺ content (x) in the solid solution. A compositional variable of the Ga/(Mg + Ga) ratio in the sixfold‐coordinated site has a constant value through the whole compositional range: the ratio is not influenced by the occupancy of Al³⁺. The occupancy of Al³⁺ is independent of the occupancy of Ga³⁺, though it depends on the occupancy of Mg²⁺ according to thermal history. The local bond lengths were estimated from the refined data of solid solutions. The local bond length between specific cation and oxygen corresponds with that expected from the effective ionic radii except local Al–O bond length in the fourfold‐coordinated site and local Mg–O bond length in the sixfold‐coordinated site. The local Al–O bond length in the fourfold‐coordinated site (1.92 Å) is about 0.15 Å longer than the expected bond length. This difference is induced by a difference in site symmetry of the fourfold‐coordinated site. The nature that Al³⁺ in spinel structure occupies mainly the sixfold‐coordinated site arises from the character of Al³⁺ itself. The local Mg–O bond length in the sixfold‐coordinated site (2.03 Å) is about 0.07 Å shorter than the expected one. Difference Fourier synthesis for MgGa₂O₄ shows a residual electron density peak of about 0.17 e/ų in height on the center of (Ga_0.59 Mg_0.41)–O bond. This peak indicates the covalent bonding nature of Ga–O bond on the sixfold‐coordinated site in the spinel structure.     

Enhancement of the positive secondary ion yield during low‐energy,dual‐beam depth profiling of polytetrafluoroethylene with 1‐keV Cs+

This work documents the behaviour of the positive secondary ion yield of bulk polytetrafluoroethylene (PTFE) under dual‐beam depth profiling conditions employing 1 keV Ar⁺, Cs⁺ and SF₅⁺. A unique chemical interaction is observed in the form of a dramatic enhancement of the positive secondary ion yield when PTFE is dual‐beam profiled with 1 keV Cs⁺. The distinct absence of such an enhancement is noted for comparison on two non‐fluorinated polymers, polyethylene terephthalate (PET) and polydimethylsiloxane (PDMS). The bulk PTFE was probed using 15‐keV, ⁶⁹Ga⁺ primary ions in dual beam mode under static conditions; 1‐keV Ar⁺ (a non‐reactive, light, noble element), Cs⁺ (a heavier metallic ion known to form clusters) and SF₅⁺ (a polyatomic species) served as the sputter ion species. The total accumulated primary ion dose was of the order of 10¹⁵ ions/cm², which is well beyond the static limit. The enhancement of the positive secondary yield obtained when profiling with 1‐keV Cs⁺ far exceeds that obtained when SF₅⁺ is employed. An explanation of this apparent reactive ion effect in PTFE is offered in terms of polarisation of C? F bonds by Cs⁺ in the vicinity of the implantation site thereby predisposing them to facile scission. The formation of peculiar, periodic Cs_xF_y⁺ (where y = x ? 1) and Cs_xC_yF_z⁺ clusters that can extend to masses approaching 2000 amu are also observed. Such species may serve as useful fingerprints for fluorocarbons that can be initiated via pre‐dosing a sample with low‐energy Cs⁺ prior to static 15‐keV Ga⁺ analysis. Copyright © 2005 John Wiley & Sons, Ltd.     

Microstructural and physicochemical study of the buried Fe/AlGaAs(100) interface by transmission electron microscopy and x‐ray emission spectroscopy

Among the magnetic metal/semiconductor contacts, the Fe/GaAs system has been widely studied owing to its potential applications in electronic devices. In contrast, there are not many studies concerning the Fe/Al_xGa_1?xAs contact, and in particular there are no reports concerning the changes induced in the interfacial zone by the presence of Al. In this work, thin polycrystalline iron films were deposited by ion beam sputtering at room temperature on a 300 nm thick Al_0.25Ga_0.75As layer grown by molecular beam epitaxy onto GaAs(001). X‐ray diffraction analysis showed that the iron films are polycrystalline, and indications of a (002) texture of the film were observed. The fine scale analysis of the interface was achieved by high‐resolution transmission electron microscopy (HRTEM) observations, the results of which are compared with the physicochemical information obtained from electron‐induced x‐ray emission spectroscopy, by analysing the Al 3p valence states at the Fe/Al_xGa_1?xAs interface. The HRTEM experiments on cross‐section samples indicate that the interfacial zone between iron and AlGaAs is limited to <1.5 nm in thickness. X‐ray emission spectroscopy showed the presence of Al atoms in an FeAl‐like environment at the interface, and the existence of wrong bonds and point defects. The estimated width of the perturbed interface (2.0 ± 0.5 nm) is in agreement with the HRTEM results. Copyright © 2003 John Wiley & Sons, Ltd.     

Depth profiling of polymer samples using Ga+ and C60+ ion beams

In this contribution, we focus on the use of C₆₀⁺ ions for depth profiling of model synthetic polymers: polystyrene (PS) and poly(methylmethacrylate) (PMMA). These polymers were spin coated on silicon wafers, and the obtained samples were depth‐profiled both with Ga⁺ ions and C₆₀⁺ ions. We observed an important yield enhancement for both polymers when C₆₀⁺ ions are used. More specifically, we discuss here the decrease in damage obtained with C₆₀, which is found to be very sensitive to the nature of the polymer. During the C₆₀⁺ sputtering of the PMMA layer, after an initial decrease, a steady state is observed in the secondary ion yield of characteristic fragments. In contrast, for PS, an exponential decrease is directly observed, leading to an initial disappearance cross section close to the value observed for Ga⁺. Though there is a significant loss of characteristic PS signal when sputtering with C₆₀⁺ ions beams, there are still significant enhancements in sputter yields when employing C₆₀⁺ as compared to Ga⁺. Copyright © 2008 John Wiley & Sons, Ltd.     

Determination of the relative sputtering yield of carbon to tantalum by means of Auger electron spectroscopy depth profiling

The relative sputtering yield of carbon with respect to tantalum was determined for 1 keV Ar⁺ ion bombardment in the angular range of 70°–82° (measured from surface normal) by means of Auger electron spectroscopy depth profiling of C/Ta and Ta/C bilayers. The ion bombardment‐induced interface broadening was strongly different for the C/Ta and Ta/C, whereas the C/Ta interface was found to be rather sharp, the Ta/C interface was unusually broad. Still the relative sputtering yields (Y_C/Y_Ta) derived from the Auger electron spectroscopy depth profiles of the two specimens agreed well. The relative sputtering yields obtained were different from those determined earlier on thick layers, calculated by simulation of SRIM2006 and by the fitting equation of Eckstein. The difference increases with increase of angle of incidence. Copyright © 2009 John Wiley & Sons, Ltd.     

Preferential sputtering observed in Auger electron spectroscopy sputter depth profiling of AlAs/GaAs superlattice using low‐energy ions

Auger electron spectroscopy (AES) sputter depth profiling of an ISO reference material of the GaAs/AlAs superlattice was investigated using low‐energy Ar⁺ ions. Although a high depth resolution of ～1.0 nm was obtained at the GaAs/AlAs interface under 100 eV Ar⁺ ion irradiation, deterioration of the depth resolution was observed at the AlAs/GaAs interface. The Auger peak profile revealed that the enrichment of Al due to preferential sputtering occurred during sputter etching of the AlAs layer only under 100 eV Ar⁺ ion irradiation. In addition, a significant difference in the etching rates between the AlAs and GaAs layers was observed for low‐energy ion irradiation. Deterioration of the depth resolution under 100 eV Ar⁺ ion irradiation is attributed to the preferential sputtering and the difference in the etching rate. The present results suggest that the effects induced by the preferential sputtering and the significant difference in the etching rate should be taken into account to optimize ion etching conditions using the GaAs/AlAs reference material under low‐energy ion irradiation. Copyright © 2005 John Wiley & Sons, Ltd.     

Variation of the electron inelastic mean free path during depth profiling of the Fe/Si interface as determined by quantitative REELS

The aim of this work is to determine the dependence of the electron inelastic mean free path (IMFP) at the Fe/Si interface during depth profiling by sputtering with 3 keV Ar⁺ ions. In order to estimate the variation of the IMFP at the interface, reflection electron energy‐loss spectroscopy (REELS) measurements were performed after different sputtering times at the Fe/Si interface with three different primary electron energies (i.e. 0.5, 1 and 1.5 keV). Even though it is highly likely that a compound (i.e. Fe_xSi) is formed at the interface, all the experimental REELS spectra could be analysed as a linear combination of those corresponding to pure Si and Fe. Using the model developed by Yubero and Tougaard for quantitative analysis of these REELS spectra we could estimate the IMFP values along the depth profile at the interface. The resulting IMFPs are observed to vary linearly with the average composition (as determined by REELS) at the Fe/Si interface as it is sputter depth profiled. The energy dependence of the IMFP for different compositions is presented and discussed. For completeness, we have determined the energy‐loss functions as well as the IMFPs of the pure elements (i.e. Fe and Si). Copyright © 2004 John Wiley & Sons, Ltd.     

Large-scale quantification of aluminum in AlxGa1-xN alloys by ToF-SIMS: The benefit of secondary cluster ions

Precise determination of composition is requisite for Al_xGa_1-xN-based energy band engineering. Secondary cluster ions in a time-of-flight secondary ion mass spectrometry (ToF-SIMS) full spectrum are introduced for accurate quantification of Al in Al_xGa_1-xN for AlGaN-based devices. It was found that statistical analysis with huge number of large secondary cluster ions (without small ions) show much better linear dependence with apparent compensation of matrix effect, particularly in negative polarity. For Al_xGa_1-xN with x = 0 to 0.7, x values calculated based on large negative cluster ions (NCIs) show excellent linear dependence with real values. Besides, atomic count ratio of C (Al)/C (Ga) and C (Ga)/C (Al) also shows great linear relationships with corresponding mole fraction ratios in a large range. Overlap of these linear ranges offers a reliable and convenient quantification protocol of Al_xGa_1-xN covering a full range of x = 0 to 1. This study verifies that the secondary cluster ions are beneficial for quantification of Al_xGa_1-xN-based materials.     

Unravelling Local Atomic Order of the Anionic Sublattice in M(Al1−xGax)4 with M=Sr and Ba by Using NMR Spectroscopy and Quantum Mechanical Modelling

The quasibinary section of the intermetallic phases MAl₄ and MGa₄ with M=Sr and Ba have been characterised by means of X‐ray diffraction (XRD) studies and differential thermal analysis. The binary phases show complete miscibility and form solid solutions M(Al_1?xGa_x)₄ with M=Sr and Ba. These structures crystallise in the BaAl₄ structure type with four‐ and five‐bonded Al and/or Ga atoms (denoted as Al(4b), Al(5b), Ga(4b), and Ga(5b), respectively) that form a polyanionic Al/Ga sublattice. Solid state ²⁷Al NMR spectroscopic analysis and quantum mechanical (QM) calculations were applied to study the bonding of the Al centres and the influence of Al/Ga substitution, especially in the regimes with low degrees of substitution. M(Al_1?xGa_x)₄ with M=Sr and Ba and 0.925≤x≤0.975 can be described as a matrix of the binary majority compound in which a low amount of the Ga atoms has been substituted by Al atoms. In good agreement with the QM calculations, ²⁷Al NMR investigations and single crystal XRD studies prove a preferred occupancy of Al(4b) for these substitution regimes. Furthermore, two different local Al environments were found, namely isolated Al(4b1) atoms and Al(4b2), due to the formation of Al(4b)–Al(4b) pairs besides isolated Al(4b) atoms within the polyanionic sublattice. QM calculations of the electric field gradient (EFG) using superlattice structures under periodic boundary conditions are in good agreement with the NMR spectroscopic results.     

Mechanochemical-thermal preparation and structural studies of mullite-type Bi2(GaxAl1−x)4O9 solid solutions

A series of Bi₂(Ga_xAl_1−x)₄O₉ solid solutions (0≤x≤1), prepared by mechanochemical processing of Bi₂O₃/Ga₂O₃/Al₂O₃ mixtures and subsequent annealing, was investigated by XRD, EDX, and ²⁷Al MAS NMR. The structure of the Bi₂(Ga_xAl_1−x)₄O₉ solid solutions is found to be orthorhombic, space group Pbam (No. 55). The lattice parameters of the Bi₂(Ga_xAl_1−x)₄O₉ series increase linearly with increasing gallium content. Rietveld refinement of the XRD data as well as the analysis of the ²⁷Al MAS NMR spectra show a preference of gallium cations for the tetrahedral sites in Bi₂(Ga_xAl_1−x)₄O₉. As a consequence, this leads to a far from random distribution of Al and Ga cations across the whole series of solid solutions.     

Investigation of metallic interdiffusion in Al x Ga1−x N/GaN/sapphire heterostructures used for microelectronic devices by SEM/EDX and SIMS depth profiling

Secondary ion mass spectrometry (SIMS) depth profiling has been applied to the study of the thermal annealing of ohmic contacts for high electron mobility transistors. The metallic stacks (Ti/Al/Ni/Au) were deposited over the Al_0.28Ga_0.72N/GaN/sapphire heterostructures and subjected to a rapid thermal annealing (850 °C for 30 s under N₂ atmosphere) to improve the contact performance. The surface morphology and the in-depth chemical distribution of the layered contacts were severely modified due to the treatment. These modifications have been analyzed by SIMS depth profiling and scanning electron microscopy–energy-dispersive X-ray microanalysis. The SIMS analysis conditions have been optimized to achieve simultaneously good sensitivity and to avoid ion-induced mixing effects produced by the primary beam sputtering.     

Structural Variations in the Solid‐Solution Series LnxCa2−xAl[Al1+xSi1−xO7] with 0 ≤ x ≤ 1 and Ln = La,Eu, Er

Gehlenite, Ca₂Al[AlSiO₇], has melilite‐type structure with space group . It contains two topologically distinct positions coordinated tetrahedrally by oxygen. One is completely occupied by Al³⁺, whereas the other one contains Al³⁺ and Si⁴⁺. Normally, the Al³⁺ molar fraction in the second tetrahedrally coordinated position does not exceed x_Al = 0.5, i.e. the so‐called Loewenstein‐rule is obeyed. In this contribution the structural variations in the melilite‐type compounds of the compositions La_xCa_2?xAl[Al_1+xSi_1?xO₇], Eu_xCa_2?xAl[Al_1+xSi_1?xO₇] and Er_xCa_2?xAl[Al_1+xSi_1?xO₇] are discussed. All members of the solid solution except the end‐members violate Loewenstein's rule. Rietveld refinements against X‐ray powder diffraction patterns confirm that the compounds have space group , without changes in the Wyckoff‐positions of the ions compared to gehlenite.     

BAM‐L002—a new type of certified reference material for length calibration and testing of lateral resolution in the nanometre range

A new type of test sample for the determination of lateral resolution in surface analysis is presented. The certified reference material BAM‐L002 ‘Nanoscale strip pattern for length calibration and testing of lateral resolution’ is an embedded cross‐section of epitaxially grown layers of Al_xGa_1?xAs and In_xGa_1?xAs on GaAs substrate. The surface of the sample provides a flat pattern with strip widths of 0.4–500 nm. The combination of gratings, isolated narrow strips and sharp edges of wide strips offers improved possibilities for the calibration of a length scale, the determination of lateral resolution and the optimization of instrument settings. The feasibility of the reference material for an analysis of lateral resolution is demonstrated for SIMS. Copyright © 2004 John Wiley & Sons, Ltd.     

An effect of measurement conditions on the depth resolution for low‐energy dual‐beam depth profiling using TOF‐SIMS

An effect of measurement conditions on the depth resolution was investigated for dual‐beam time of flight‐secondary ion mass spectrometry depth profiling of delta‐doped‐boron multi‐layers in silicon with a low‐energy sputter ion (200 eV – 2 keV O₂⁺) and with a high‐energy primary ion (30 keV Bi⁺). The depth resolution was evaluated by the intensity ratio of the first peak and the subsequent valley in B⁺ depth profile for each measurement condition. In the case of sputtering with the low energy of 250 eV, the depth resolution was found to be affected by the damage with the high‐energy primary ion (Bi⁺) and was found to be correlated to the ratio of current density of sputter ion to primary ion. From the depth profiles of implanted Bi⁺ primary ion remaining at the analysis area, it was proposed that the influence of high‐energy primary ion to the depth resolution can be explained with a damage accumulation model. Copyright © 2013 John Wiley & Sons, Ltd.     

A study of theoretical depth resolution of GaAs/AlAs reference material with low energy inert‐gas ions by Monte Carlo simulation

A Monte Carlo (MC) simulation program written in C++ has been newly developed to describe the dynamic processes of depth profiling with low energy ions. This MC simulation was applied to the depth profiling of GaAs/AlAs reference material for Ne⁺, Ar⁺, and Xe⁺ ions to elucidate the depth resolution attained by surface analytical techniques. The result clearly predicts that there is a considerable difference between the depth resolutions estimated from the leading and trailing edges of Ne⁺ and Xe⁺ ions, whereas the difference is quite small for Ar⁺ ions. Systematic investigation of the dependence of theoretical depth resolution on primary ion energy has revealed that the preferential sputtering primarily caused by the difference in energy transfer to target atoms through elastic collisions between incident ions and target atoms results in the difference between the leading and trailing edges. The inclusion of other factors, e.g. preferential sputtering effect caused by the metallization of Al atoms on the topmost surface, etc. for further improvement of the MC simulation modeling before accommodating quantitative arguments on the depth resolution is strongly recommended. Copyright © 2006 John Wiley & Sons, Ltd.     

Experimental and theoretical determination of the mixing efficiency at low‐energy Ar+ bombardment: case study of the Cu/Co system

The mixing of a Co/Cu bilayer induced by low‐energy ion bombardment was studied by AES depth profiling and molecular dynamic (MD) simulation. The conditions of the ion bombardment were as follows: Ar⁺ ion, 1 keV energy, 82° angle of incidence (with respect to the surface normal). In AES depth profiling, the in‐depth concentration distribution was estimated from the measured Auger intensities assuming that the in‐depth distribution is an erf function. The variance (σ²) of the erf function gave the broadening of the interface due to ion bombardment, which divided by the fluence (Φ) and deposited energy (F_D given by SRIM) gave the mixing efficiency (σ²/ΦF_D) to be 0.08 ± 0.01 nm⁵/keV. The mixing efficiency calculated by MD, 0.09 nm⁵/keV, agreed well with that estimated from the experimental data, and both have been close to the value assuming ballistic mixing. Copyright © 2007 John Wiley & Sons, Ltd.     

Use of C60 cluster projectiles for sputter depth profiling of polycrystalline metals

We have investigated the merits of fullerene cluster ions as projectiles in time‐of‐flight secondary neutral mass spectrometry (ToF‐SNMS) sputter depth profiling of an Ni:Cr multilayer sample similar to the corresponding NIST depth profiling standard. It is shown that sputter erosion under bombardment with C₆₀⁺ ions of kinetic energies between 10 and 20 keV provides good depth resolution corresponding to interface widths of several nanometres. This depth resolution is maintained during the complete removal of the multilayer stack with a total thickness of 500 nm. This finding is in contrast to the case where atomic Ga⁺ projectile ions of comparable kinetic energy are used, demonstrating the unique features of cluster projectiles in sputter depth profiling. Copyright © 2004 John Wiley & Sons, Ltd.