Synthesis and characterization of LaB6 thin films on tungsten, rhenium, silicon and other substrates and their investigations as?field emitters

The paper deals with the comparative study of nanocrystalline Lanthanum hexaboride (LaB₆) thin films grown on various substrates by Pulsed laser deposition and Arc plasma method. Field emission studies were carried out on LaB₆ films deposited on various substrates show metallic behavior of the emitters. The high value of field enhancement factors, indicating that the electron emission from LaB₆ nanoscale protrusions deposited on emitter surface. The post field emission surface morphology of the emitters showed no significant erosion of the films during continuous operation. The observed behavior indicates that it is linked with the growth of LaB₆ films on substrate crystal structure. The LaB₆ nanocrystallites/nanowires films were synthesized using arc plasma method shows good emission current stability. The LaB₆ micro/nanocrystallites were also obtained by picosecond laser irradiation which gives high enhancement β factor, and good emission current stability along with high current density. The results reveal that nanocrystalline LaB₆ films, exhibit high resistance to ion bombardment and excellent structural stability and are more promising emitters for practical applications in field emission based new generation devices.     

Enhanced field emission from LaB6 thin films with nanoprotrusions grown by pulsed laser deposition on Zr foil

Lanthanum hexaboride (LaB₆) films have been deposited on a zirconium foil by pulsed laser deposition method. The field emission studies of the LaB₆ deposited film have been performed in the planar diode configuration under ultra high vacuum conditions. The Fowler-Nordheim plots were found to be linear in accordance with the quantum mechanical tunneling phenomenon. A typical field emission current of 7.02 μA was drawn at an applied electric field of 2 V/μm. The field enhancement factor is calculated to be 8913 cm⁻¹, indicating that the field emission is from nanoscale protrusions present on the emitter surface. The atomic force microscope (AFM) investigation of the surface clearly shows the conical shaped nanoprotrusions of few hundred nanometers with asperities of 20-40 nm on its top. The emission current-time plot recorded at the pre-set value of emission current of 5 μA over a period of more than 3 h exhibits an initial increase and subsequent stabilization of the current. The results reveal that the LaB₆/Zr field emitter obtained by the pulsed laser deposition (PLD) is a promising cathode material for practical applications in field emission-based devices.     

Arc plasma synthesized LaB<Subscript>6</Subscript> nanocrystallite film on various substrates as a field emitter

Lanthanum hexaboride (LaB₆) nanocrystallites/nanowires have been successfully synthesized using gas phase condensation in arc plasma. Our results show that the LaB₆ nanowires have ~20 nm diameter and length of several micrometers. The as-synthesized LaB₆ nanocrystallites and nanowires are crystalline in nature. Field emission studies were carried out on as synthesized LaB₆ nano-powder deposited on W and Re tips and foils, and also on Si foil substrates under ultra high vacuum. The Fowler–Nordheim plots obtained from the current–voltage characteristics are found to be linear in accordance with the quantum mechanical tunneling phenomenon. High value of field enhancement factor (8177) is observed for LaB₆ on Re substrate, indicating that the electron emission is from the nanometric features of the LaB₆. Our results show that the arc plasma synthesized LaB₆ nanocrystalline film exhibits good emission stability as emitter without severe deviations from the initial set value and also a strong ability to withstand the ion bombardment, which is useful for low operation voltage vacuum micro/nano electronic devices.     

Enhanced field emission from pulsed laser deposited nanocrystalline ZnO thin films on Re and W

Nanocrystalline ZnO thin films have been deposited on rhenium and tungsten pointed and flat substrates by pulsed laser deposition method. An emission current of 1 nA with an onset voltage of 120 V was observed repeatedly and maximum current density ∼1.3 A/cm² and 9.3 mA/cm² has been drawn from ZnO/Re and ZnO/W pointed emitters at an applied voltage of 12.8 and 14 kV, respectively. In case of planar emitters (ZnO deposited on flat substrates), the onset field required to draw 1 nA emission current is observed to be 0.87 and 1.2 V/μm for ZnO/Re and ZnO/W planar emitters, respectively. The Fowler–Nordheim plots of both the emitters show nonlinear behaviour, typical for a semiconducting field emitter. The field enhancement factor β is estimated to be ∼2.15×10⁵ cm⁻¹ and 2.16×10⁵ cm⁻¹ for pointed and 3.2×10⁴ and 1.74×10⁴ for planar ZnO/Re and ZnO/W emitters, respectively. The high value of β factor suggests that the emission is from the nanometric features of the emitter surface. The emission current–time plots exhibit good stability of emission current over a period of more than three hours. The post field emission surface morphology studies show no significant deterioration of the emitter surface indicating that the ZnO thin film has a very strong adherence to both the substrates and exhibits a remarkable structural stability against high-field-induced mechanical stresses and ion bombardment. The results reveal that PLD offers unprecedented advantages in fabricating the ZnO field emitters for practical applications in field-emission-based electron sources.     

Low threshold field electron emission from solvothermally synthesized WO2.72 nanowires

Field emission studies of WO_2.72 nanowires synthesized by a solvothermal method have been performed in the planar diode configuration under ultra high vacuum conditions. Fowler–Nordheim plots obtained from the current-voltage characteristics follow the quantum mechanical tunneling process and a current density of ∼8.3×10⁶ μA/cm² can be drawn at an applied electric field of 2 V/μm. The field enhancement factor is 33025, while the turn-on field is only 1.4 V/μm. The emission current-time plot recorded at the pre-set value of emission current of 1 μA over a period of more than 3 h exhibits an initial increase and a subsequent stabilization of the emission current. The results reveal that the WO_2.72 nanowire emitters synthesized by the solvothermal method are promising cathode materials for practical applications.     

Electron field emission from magnetic nanomaterial encapsulated multi-walled carbon nanotubes

The present work describes the field emission characteristics of nanoscale magnetic nanomaterial encapsulated multi-walled carbon nanotubes (MWNTs) fabricated over flexible graphitized carbon cloth. Ni/MWNTs, NiFe/MWNTs and NiFeCo/MWNTs have been synthesized by catalytic chemical vapor decomposition of methane over Mischmetal (Mm)-based AB₃ (MmNi₃, MmFe_1.5Ni_1.5 and MmFeCoNi) alloy hydride catalysts. Metal-encapsulated MWNTs exhibited superior field emission performance than pure MWNT-based field emitters over the same substrate. The results indicate that a Ni-filled MWNT field emitter is a promising material for practical field emission application with a lowest turn-on field of 0.6 V/μm and a high emission current density of 0.3 mA/cm² at 0.9 V/μm.     

Visible up-conversion and NIR luminescence studies of LiAl<Subscript>5</Subscript>O<Subscript>8</Subscript>:Er phosphor co-doped with Yb<Superscript>3+</Superscript> and Zn<Superscript>2+</Superscript>

The frequency up-conversion, an efficient laser emission and amplification in Er³⁺:LiAl₅O₈ phosphors co-doped with Yb³⁺ and Zn²⁺ phosphor powders in the 520–560, 640–680 nm regions and at ∼1.5 μm, respectively, have been reported. The emission corresponds to the ²H_11/2, ⁴S_3/2→⁴I_15/2, ⁴F_9/2→⁴I_15/2 and ⁴I_13/2→⁴I_15/2 transitions upon direct excitation into the intermediated ⁴I_11/2 level using ∼980 nm radiation from a CW laser. Possible mechanisms involved for the up-conversion processes based on the energy level matching scheme, the pump-power dependence and the dynamical behaviour have been discussed. The effect of the addition of Yb³⁺ and Zn²⁺ for the amplification in the 1.5 μm eye-safe telecommunication window has been elaborated and characterized in detail.     

Structure,transport and field-emission properties of compound nanotubes: CN<Subscript>x</Subscript> vs. BNC<Subscript>x</Subscript> (<Emphasis Type="Italic">x</Emphasis><0.1)

Transport and field-emission properties of as-synthesized CN_x and BNC_x (x<0.1) multi-walled nanotubes were compared in detail. Individual ropes made of these nanotubes and macrofilms of those were tested. Before measurements, the nanotubes were thoroughly characterized using high-resolution and energy-filtered electron microscopy, electron diffraction and electron-energy-loss spectroscopy. Individual ropes composed of dozens of CN_x nanotubes displayed well-defined metallic behavior and low resistivities of ∼10–100 kΩ or less at room temperature, whereas those made of BNC_x nanotubes exhibited semiconducting properties and high resistivities of ∼50–300 MΩ. Both types of ropes revealed good field-emission properties with emitting currents per rope reaching ∼4 μA(CN_x) and ∼2 μA (BNC_x), albeit the latter ropes se- verely deteriorated during the field emission. Macrofilms made of randomly oriented CN_x or BNC_x nanotubes displayed low and similar turn-on fields of ∼2–3 V/μm. 3 mA/cm² (BNC_x) and 5.5 mA/cm² (CN_x) current densities were reached at 5.5 V/μm macroscopic fields. At a current density of 0.2–0.4 mA/cm² both types of compound nanotubes exhibited equally good emission stability over tens of minutes; by contrast, on increasing the current density to 0.2–0.4 A/cm², only CN_x films continued to emit steadily, while the field emission from BNC_x nanotube films was prone to fast degradation within several tens of seconds, likely due to arcing and/or resistive heating. Received: 29 October 2002 / Accepted: 1 November 2002 / Published online: 10 March 2003 RID="*" ID="*"Corresponding author. Fax: +81-298/51-6280, E-mail: golberg.dmitri@nims.go.jp     

Laser-induced cavities and solitons in overcritical hydrogen plasma

A picosecond CO₂ laser was used successfully in a number of experiments exploring advanced methods of particle acceleration [1]. Proton acceleration from gas-jet plasma exemplifies another advantage of employing the increase in laser wavelength from the optical to the mid-IR region. Recent theoretical- and experimental-studies of ion acceleration from laser-generated plasma point to better ways to control the ion beam’s energy when plasma approaches the critical density. Studying this regime with solid-state lasers is problematic due to the dearth of plasma sources at the critical electron density ∼10²¹ cm⁻³, corresponding to laser wavelength λ = 1 μm. CO₂ laser offers a solution. The CO₂ laser’s 10 μm wavelength shifts the critical plasma density to 10¹⁹ cm⁻³, a value attainable with gas jets. Capitalizing on this approach, we focused a circular polarized 1-TW CO₂ laser beam onto a hydrogen gas jet and observed a monoenergetic proton beam in the 1–2 MeV range. Simultaneously, we optically probed the laser/plasma interaction region with visible light, revealing holes bored by radiation pressure, as well as quasi-stationary soliton-like plasma formations. Our findings from 2D PIC simulations agree with experimental results and aid in their interpretation.     

Laser-assisted generation of self-assembled microstructures on stainless steel

Utilising a Nd:YVO₄ laser (wavelength of 532 nm, pulse duration of 8 ns, repetition rate of 30 kHz) and a Nd:YAG laser (wavelength of 1064 nm, pulse duration of 7 ns, repetition rate of 25 kHz), it was found that during the pulsed laser ablation of metal targets, such as stainless steel, periodic nodular microstructures (microcones) with average periods ranging from ∼30 to ∼50 μm were formed. This period depends on the number of accumulated laser pulses and is independent of the laser wavelength. It was found that the formation of microcones could occur after as little as 1500 pulses/spot (a lower number than previously reported) are fired onto a target surface location at laser fluence of ∼12 J/cm², intensity of ∼1.5 GW/cm². The initial feedback mechanism required for the formation of structures is attributed to the hydrodynamic instabilities of the melt. In addition to this, it has been shown that the structures grow along the optical axis of the incoming laser radiation. We demonstrate that highly regular structures can be produced at various angles, something not satisfactorily presented on metallic surfaces previously. The affecting factors such as incident angle of the laser beam and the structures that can be formed when varying the manner in which the laser beam is scanned over the target surface have also been investigated.     

Modeling and analysis of birefringence in magneto-optical thin film made by SiO2/ZrO2 doped with ferrite of cobalt

We report the device characteristics of the metal–dielectric high-reflectivity (HR) coated 1.55 μm laterally coupled distributed feedback (DFB) laser with metal surface gratings by using holographic lithography. The HR coating films are composed of Au/Ti/SiO₂. It provides a variety of advantages compared to the uncoated DFB laser on the same processed wafer while there is no degradation on current–voltage characteristics. For 3 μm wide and 300 μm long HR coated DFB laser, it exhibits a maximum output power of ∼17 mW and a threshold current of 14.2 mA at 20°C under continuous-wave mode. It is clear that the threshold current and slope efficiency are improved by 36% and 96%, respectively, due to the reduction of mirror loss. The metal–dielectric HR coating on one facet of DFB laser is found to have significantly increased characteristic temperature (i.e., T ₀∼88 K). Furthermore, the stable single-mode operation with an increased single-mode suppression ratio was achieved.     

Selective ablation of thin SiO<Subscript>2</Subscript> layers on silicon substrates by femto- and picosecond laser pulses

The selective ablation of thin (∼100 nm) SiO₂ layers from silicon wafers has been investigated by applying ultra-short laser pulses at a wavelength of 800 nm with pulse durations in the range from 50 to 2000 fs. We found a strong, monotonic decrease of the laser fluence needed for complete ablation of the dielectric layer with decreasing pulse duration. The threshold fluence for 100% ablation probability decreased from 750 mJ/cm² at 2 ps to 480 mJ/cm² at 50 fs. Significant corruption of the opened Si surface has been observed above ∼1200 mJ/cm², independent of pulse duration. By a detailed analysis of the experimental series the values for melting and breaking thresholds are obtained; the physical mechanisms responsible for the significant dependence on the laser pulse duration are discussed.     

Quasi-point incoherent ArF<Superscript>∗</Superscript> excimer emission source at 193 nm using a laser-produced plasma

We have demonstrated proof-of-principle of an incoherent ArF^∗ emission source with a quasi-point emission geometry using a laser-produced plasma in an Ar/F₂/He/Ne mixed gas. The VUV emission characteristics, such as the emission size, were dependent on those of the plasma-initiating laser. The average emission power was 10 μW at a repetition rate of 10 Hz at 193 nm. The average power conversion efficiency of the 193-nm emission from the plasma-initiating Nd:YAG laser was 6.3×10⁻⁶. The average emission power at 193 nm was proportional to that of the plasma-initiating laser, indicating the scaling of the emission source.     

Wavelength modulation and cavity enhanced absorption spectroscopy using ～1.9?μm radiation produced by difference frequency generation with a MgO doped PPLN crystal

We have demonstrated the production of ∼1.9 μm near-infrared radiation by using difference frequency generation within a 5% MgO doped PPLN crystal by coupling ∼735 nm radiation from a tunable external cavity diode laser with relatively high powered 532 nm radiation from both Nd:YVO₃ and Nd:YAG lasers. The radiation produced is of low power, ∼15 μW, and was used in conjunction with the sensitivity enhancing techniques of wavelength modulation spectroscopy (WMS) and cavity enhanced absorption spectroscopy (CEAS). Experiments were carried out on rotationally resolved transitions in the combination bands of NH₃ and CO₂ in the 1.9 μm region. An α _min value of 3.6×10⁻⁶ cm⁻¹ Hz^−1/2 was achieved for WMS measurements on CO₂. A comparable α _min value of 2.2×10⁻⁶ cm⁻¹ Hz^−1/2 was achieved for NH₃ using CEAS. The low NIR power indicates that despite the level of MgO doping quoted for the crystal, under prolonged exposure photorefractive damage has occurred.     

Impact of the lasr wavelength and fluence on the ablation rate of aluminium

The dependence of the ablation rate of aluminium on the fluence of nanosecond laser pulses with wavelengths of 532 nm and respectively 1064 nm is investigated in atmospheric air. The fluence of the pulses is varied by changing the diameter of the irradiated area at the target surface, and the wavelength is varied by using the fundamental and the second harmonic of a Q-switched Nd-YAG laser system. The results indicate an approximately logarithmic increase of the ablation rate with the fluence for ablation rates smaller than ∼6 μm/pulse at 532 nm, and 0.3 μm/pulse at 1064 nm wavelength. The significantly smaller ablation rate at 1064 nm is due to the small optical absorptivity, the strong oxidation of the aluminium target, and to the strong attenuation of the pulses into the plasma plume at this wavelength. A jump of the ablation rate is observed at the fluence threshold value, which is ∼50 J/cm² for the second harmonic, and ∼15 J/cm² for the fundamental pulses. Further increasing the fluence leads to a steep increase of the ablation rate at both wavelengths, the increase of the ablation rate being approximately exponential in the case of visible pulses. The jump of the ablation rate at the threshold fluence value is due to the transition from a normal vaporization regime to a phase explosion regime, and to the change of the dimensionality of the hydrodynamics of the plasma-plume.      

Room-temperature continuous wave laser oscillations in Nd:YAG ceramic waveguides produced by carbon ion implantation

We report on the generation of continuous wave lasers at a wavelength of ∼1064 nm in a Nd:YAG ceramic waveguide at room temperature. The waveguide was fabricated by using 6 MeV carbon ion implantation at a fluence of 3×10¹⁴ ions/cm². Laser operation has been realized with a slope efficiency as high as ∼11%. The pump threshold of an 808-nm laser beam for the waveguide laser oscillation is 19.5 mW.     

Field emission of electrons from a single carbon fiber with a nanostructured emitting surface

The field emission of electrons from a single fine carbon fiber with a nanostructured emitting surface is studied experimentally. It is found that the fiber can serve as an effective field emitter of electrons at voltages of ∼10²–10³ under the conditions of technical vacuum and the emission current density may reach ∼10² A/cm². At a certain threshold voltage, the fiber starts executing flexural mechanical vibrations. The onset of mechanical vibrations is accompanied by a change in the field emission conditions. Namely, in the absence of vibrations, the mode of steady current extraction is observed. When mechanical vibrations set in, the field emission switches to the mode of current periodic oscillations with a constant component.     

悬浮区域熔炼法制备LaB6单晶体与发射性能研究

采用区域熔炼法成功制备出了高质量,高纯度,大尺寸的LaB₆单晶体. 系统分析了制备过程中每个参数对LaB₆单晶生长的影响,确定了晶体生长最佳工艺为:样品转速为30 r/min,生长速度为8-10 mm/h. 分析了单晶LaB₆ (100) 晶面的热电子发射性能,结果表明,当阴极温度为1873 K时,最大热发射电流密度为44.36 A/cm²;利用 Richardson 直线法求出了绝对零度逸出功和有效逸出功分别为1.99和2.59 eV. 场发射测试结果表明,单晶LaB₆场发射单尖最大场发射电流密度达到4.9×10⁶ A/cm²,场发射因子为41500 cm^-1,表现出良好的场发射性能. 因此单晶LaB₆作为热阴极和冷阴极都具有很广阔的应用前景. 关键词： 区域熔炼法 6')" href="#">单晶LaB₆ 热发射性能 场发射性能     

Selective removal and patterning of a Co/Cu/Co trilayer created by femtosecond laser processing

The selective removal and patterning of a typical pseudo-spin-valve structure, consisting of a Co(20 nm)/ Cu(6 nm)/Co(3 nm) trilayer, by femtosecond laser has been examined in terms of irradiation parameters and layer structure. Ablation thresholds of the individual Co and Cu thin films and the SiO₂/Si substrate have been measured for single-shot irradiation with a 200 femtosecond (fs) laser pulses of a Ti:sapphire laser operating at 775 nm. Ablation of the entire trilayer structure was characterized by a sequential removal of the layers at a threshold level of fluence of 0.28 J/cm². Atomic Force Microscopy, optical microscopy, profilometry and Sputtered Neutral Mass Spectroscopy were employed to characterize the laser-induced single-shot laser selective removal and patterned areas. As a result, two phenomena were found to characterize the laser process: (i) selective removal of the Co and Cu layer due to the change of the laser fluence and (ii) regular pillars’ area of Co/Cu/Co could be achieved in a regular manner with the lowest pillar width size of 1.5 μm. Ablation through the layers was accompanied by the formation of bulges at the edges of the pillars, which was the biggest inconvenience in lowering the pillar size through the femtosecond laser process.     

PLD synthesis of GaN nanowires and nanodots on patterned catalyst surface for field emission study

Patterned gallium nitride nanowires and nanodots have been grown on n-Si (100) substrates by pulsed laser deposition. The nanostructures are patterned using a physical mask, resulting in regions of nanowire growth of different densities. The field emission (FE) characteristics of the patterned gallium nitride nanowires show a turn-on field of 9.06 V/μm to achieve a current density of 0.01 mA/cm² and an enhanced field emission current density as high as 0.156 mA/cm² at an applied field of 11 V/μm. Comparing the peak FE current densities of both the nanowires and nanodots, the peak FE current density of nanowires is around 700 times higher than that of the peak FE current density of nanodots since nanodots have a lower aspect ratio compared to nanowires. The field emission results indicate that, besides density difference, crystalline quality as well as the low electron affinity of gallium nitride, high aspect ratio of gallium nitride nanostructures will greatly enhance their field emission properties.