NM/FI/NI/FI/NM新型双自旋过滤隧道结的隧穿电导和隧穿磁电阻

在NM/FI/FI/NM型双自旋过滤隧道结(此处NM为非磁金属层，FI为铁磁绝缘体或半导体层)的基础上，我们提出一种NM/FI/NI/FI/NM新型双自旋过滤隧道结(此处NI表示非磁绝缘体或半导体层). 插入NI层的目的是为了避免原双自旋过滤隧道结中相邻FI层界面处磁的耦合作用所导致的对隧穿磁电阻的不利影响. 在自由电子近似的基础上，利用转移矩阵方法，对NM/FI/NI/FI/NM新型双自旋过滤隧道结的隧穿电导、隧穿磁电阻与FI层及NI层厚度的变化关系以及随偏压的变化关系进行了理论研究.计算结果表明，在NM/FI/NI/FI/NM新型双自旋过滤隧道结中仍可以得到很大的TMR值. 关键词： 双自旋过滤隧道结 隧穿磁电阻 非磁绝缘(半导)体间隔层     

Spin Wave Spectra in a Ferromagnetic/Non-magnetic Superlatt ice with Antiparallel Magnetization

The transfer-matrix method is employed to investigate the spin waves in a ferromagnetic/non-magnetic superlat tice with an antiferromagnetic coupling between interfacial ferromagnetic layers across a non-magnetic spacer layers and the an tiparaUel magnetizations between neighboring ferromagnetic films. The dispersion relation of the spin waves is obtained. The effects of the thickness of the magnetic layers, the antiferromagnetic coupling strength and concentration of magnetic atoms at the interface on the spin wave spectra are discussed in detail.     

Magnetoresistance and magnetization studies through a Cu interlayer in spin valves of NiFe/Cu/NiFe/FeMn

The influence of the Cu layer thickness on the magnetic and magnetotransport properties has been investigated in Ta/NiFe/Cu/NiFe/FeMn spin valves. The magnetization and magnetoresistance measurements were carried out for magnetic field applied along the easy-axis direction. A phenomenological model, which assumes formation of a planar domain wall at the anti-ferromagnetic side of the interfaces as well as bilinear coupling between the ferromagnetic layers, was used to derive the anisotropy characteristics and orientation of each NiFe layer magnetization. The anisotropy and spin valve magnetoresistance were simulated numerically and compared with the experiment. It was found that the anisotropy magnetoresistance is negligible and that there is a poor agreement for the spin-valve one, which was attributed to the model (valid for ferromagnetic layers in single-domain state only) used for its calculation. It was found that the increase of the Cu layer thickness provokes a decrease of the interdiffusion between the NiFe and FeMn layers, and, as consequence, changes of the uniaxial anisotropy of the pinned NiFe layer, of the exchange interaction between the pinned NiFe layer and the FeMn ones, as well as of the exchange-bias field of the pinned NiFe layer.     

Spin-transfer torque in tunnel junctions with ferromagnetic layer of finite thickness

Two components of the spin torque exerted on a free ferromagnetic layer of finite thickness and a half-infinite ferromagnetic electrode in single tunnel junctions have been calculated in the spin-polarized free-electron-like one-band model. It has been found that the torque oscillates with the thickness of ferromagnetic layer and can be enhanced in the junction with the special layer thickness. The bias dependence of torque components also significantly changes with layer thickness. It is non-symmetric for the normal torque, in contrast to the symmetric junctions with two identical half-infinite ferromagnetic electrodes. The asymmetry of the bias dependence of the normal component of the torque can be also observed in the junctions with different spin splitting of the electron bands in the ferromagnetic electrodes.     

Spin-injection mechanism of magnetization reversal and hysteresis of current in magnetic junctions

A novel mechanism is proposed for magnetization reversal by the current of magnetic junctions with two metallic ferromagnetic layers and thin separating nonmagnetic layer. The spin-polarized current flows perpendicularly to the interfaces between the ferromagnetic layers, in one of which the spins are pinned and in the other they are free. No domain structure is formed in the ferromagnetic layers. The current breaks spin equilibrium in the free layer, which manifests itself in the injection or extraction of spins. The nonequilibrium spins interact with the magnetization of the lattice due to the effective field of s-d exchange, which is current dependent. At currents exceeding a certain threshold value, this interaction leads to magnetization reversal. Two threshold currents for magnetization reversal have been obtained theoretically, which are reached as the current increases or decreases, respectively. Thus, the phenomenon of current hysteresis is found. The calculated results are in good agreement with experiments on magnetization reversal by current in three-layer junctions of composition Co(I)/Cu/Co(II) prepared in a pillar form.     

Current-induced domain formation in magnetic junctions

A junction between two ferromagnetic metal layers with fixed spins in one of them and free spins in the other (spin valve) is considered. The junction is placed in an external magnetic field that orients the free layer oppositely to the fixed layer. It is shown that the spin-polarized electron flow from the fixed layer to the free layer gives rise to stable motionless magnetic domains in the free layer, provided that the magnetic field and the thickness of the free layer are large enough.     

Current-induced spin injection and surface torque in ferromagnetic metallic junctions

The joint influence of two current-induced effects, namely, longitudinal nonequilibrium spin injection and surface torque, on spin-valve-type ferromagnetic metallic junctions is considered theoretically. The current flows normally to layer boundaries. The analysis is based on solving a system of coupled equations of motion for mobile electron and lattice magnetizations. The boundary conditions for the equations of motion are derived from the continuity condition for the total magnetization flux in these subsystems. A dispersion relation is derived for spin wave fluctuations depending on the current through the junction. The fluctuations become unstable at currents exceeding some threshold value (usually, 10⁶?3 × 10⁷ A/cm²). The joint action of longitudinal spin injection and torque lowers the instability threshold. Current-induced spin injection decreases spin wave frequencies near the threshold and can strengthen magnetization pinning at the injecting contact.     

X-ray magnetic circular dichroism study of the induced spin polarization of Cu in Co/Cu and Fe/Cu multilayers

We present an x-ray magnetic circular dichroism (XMCD) study of Co/Cu and Fe/Cu multilayers, finding that the Cu atoms in these structures exhibit an induced magnetic moment in the d shell. The average Cu spin moment is shown to fall-off inversely with the thickness of the Cu layer. Further, for comparable Cu layer thicknesses, the Cu moments in Fe/Cu and Co/Cu multilayers are found to be nearly equal, despite the fact that the Cu layers in the Co/Cu multilayers are shown to be fee while those in the Fe/Cu structures are bcc. These observations suggest that the induced moment is primarily situated at the Co/Cu and Fe/Cu interfaces and is resultant from short range chemical hybridization between the ferromagnetic and Cu atoms. Results from a local spin density functional theory are presented and found to be in excellent agreement with experimental observations. These results indicate that the Cu d electrons play a central role in mediating the exchange coupling between successive ferromagnetic layers.     

First-principles study and electronic structures of Mn-doped ultrathin ZnO nanofilms

The first-principles density functional calculation is used to investigate the electronic structures and magnetic properties of Mn-doped and N-co-doped ZnO nanofilms.The band structure calculation shows that the band gaps of ZnO films with 2,4,and 6 layers are larger than the band gap of the bulk with wurtzite structure and decrease with the increase of film thickness.However,the four-layer ZnO nanofilms exhibit ferromagnetic phases for Mn concentrations less than 24% and 12% for Mn-doping performed in the whole layers and two layers of the film respectively,while they exhibit spin glass phases for higher Mn concentrations.It is also found,on the one hand,that the spin glass phase turns into the ferromagnetic one,with the substitution of nitrogen atoms for oxygen atoms,for nitrogen concentrations higher than 16% and 5% for Mn-doping performed in the whole layers and two layers of the film respectively.On the other hand,the spin-glass state is more stable for ZnO bulk containing 5% of Mn impurities,while the ferromagnetic phase is stable by introducing the p-type carriers into the bulk system.Moreover,it is shown that using the effective field theory for ferromagnetic system,the Curie temperature is close to the room temperature for the undamped Ruderman-Kittel-Kasuya-Yoshida(RKKY) interaction.     

Carrier spin polarization in ferromagnet-semiconductor (Ga,Mn)As/GaAs structures

The effect of ferromagnetic layers on the spin polarization of holes and electrons in ferromagnet-semiconductor superlattices with a fixed Mn δ-layer thickness of 0.11 nm and different GaAs interlayer thicknesses varying in the range from 2.5 to 14.4 nm and a fixed number of periods (40) is studied by means of hot-electron photoluminescence (HPL). Here, our study of the HPL demonstrates that the holes in δ-layers of (Ga,Mn)As DMS occupy predominantly the Mn acceptor impurity band. The width of the impurity band decreases with the increase of the interlayer distance. We also found that an increase in the GaAs interlayer thickness softens the magnetic properties of the ferromagnetic layers as well as reduces the carrier polarization. It is demonstrated that the hole spin polarization in the DMS layers and spin polarization of electrons in nonmagnetic GaAs are proportional to the sample magnetization.     

Spin configurations in the absence of an external magnetic field in a magnetic bilayer with in-plane cubic or uniaxial anisotropies

The spin configurations in the absence of an external magnetic field have been systematically investigated for a magnetic bilayer system consisting of two ferromagnetic layers separated by a non-magnetic layer with interlayer exchange coupling. Based on a phenomenological model, the conditions for the existence of collinear and non-collinear spin structures were derived for three kinds of magnetic bilayers with different combinations of in-plane cubic and uniaxial anisotropies for the two ferromagnetic layers. The phase diagrams of the spin configurations at zero field were drawn, taking into account the lowest-order anisotropy parameters of both the ferromagnetic layers. The values of the canting angle have been derived analytically and then numerically plotted.     

Current-induced excitations in single cobalt ferromagnetic layer nanopillars

Current-induced excitations in Cu/Co/Cu single ferromagnetic layer nanopillars ( approximately 50 nm in diameter) have been studied experimentally as a function of Co layer thickness at low temperatures for large applied fields perpendicular to the layers. For asymmetric junctions current-induced excitations are observed at high current densities for only one polarity of the current and are absent at the same current densities in symmetric junctions. These observations confirm recent predictions of spin-transfer torque induced spin-wave excitations in single layer junctions with a strong asymmetry in the spin accumulation in the leads.     

Fen/Crn超晶格磁性和电子结构的第一性原理研究

采用基于密度泛函原理的全势线性缀加平面波方法(FLAPW),计算了超晶格Fen/Crn(n=1,3,5)的电子结构和磁性,结果表明铁磁耦合状态是基态,铁层的磁矩由于铬层的加入而有一些变化,铁层的磁矩随着n的增大而逐渐增强.铬层的磁矩的方向是正负相间变化的,相邻的铁层和铬层之间是反铁磁性耦合的,铁原子的d轨道和铬原子的d轨道在费米能附近有中等程度的杂化.     

Parallel pump spin wave instability in thin ferromagnetic films

The spin wave instability generated by parallel pumping in a tangentially magnetized ferromagnetic film is considered, with simultaneous regard for both the dipole and exchange fields. A dispersion equation and some expressions for the critical microwave threshold of the spin wave parametric excitation have been obtained. The dependence of the critical field on the magnetizing field has an unusually oscillating character. This is connected both with the discreteness of spin wave spectrum and the peculiarities of spin wave polarization in a tangentially magnetized film.     

铁磁/半导体(绝缘体)/铁磁异质结中渡越时间与两铁磁层磁矩夹角变化的关系

在群速度概念的基础上, 研究了自旋极化电子隧穿通过铁磁体/半导体(绝缘体)/铁磁体异质结时, 渡越时间随两端铁磁层中磁矩夹角变化的关系. 研究结果表明: 当中间层为半导体层时, 由于半导体层中的Rashba自旋轨道耦合强度的影响, 自旋向上电子和自旋向下电子的渡越时间差会在两铁磁层相对磁矩夹角为π/2和3π/2附近出现一个极小值. 当中间层为绝缘体层时, 势垒高度的变化会导致不同取向的自旋极化电子渡越时间差的变化, 并当势垒高度超过一临界值时发生翻转. 关键词： 铁磁体/半导体(绝缘体)/铁磁体异质结 Rashba自旋轨道耦合强度 渡越时间 磁矩     

Co-Ni/FeMn双层膜中磁化强度对交换偏置的影响

固定CoNiFeMn双层膜中反铁磁层的厚度,改变CoNi铁磁层的成分来调节磁化强度,从而研究铁磁层的饱和磁化强度对CoNiFeMn双层膜中交换偏置的影响.研究表明,CoNiFeMn界面的交换耦合能U不是一个常量,而是随(MFM)12的增加而线性增加.其原因是铁磁层磁矩通过界面相互作用在反铁磁层中形成的局域交换磁场,在磁场冷却时影响反铁磁层的自旋结构或磁畴结构及双层膜中的交换偏置 关键词： 交换偏置 磁化强度     

有机自旋阀的磁电阻性质研究

考虑到有机半导体中极化子和双极化子特殊的电荷-自旋关系,从自旋扩散方程和欧姆定律出发,理论研究了"铁磁/有机半导体/铁磁"有机自旋阀结构中的磁电阻性质.计算发现,磁电阻在数值上随有机半导体层中极化子比率的增加而增大,随有机半导体层厚度的增加而迅速减小.同时发现自旋相关界面电阻能在很大程度上提高系统的磁电阻.讨论了铁磁层和有机半导体电导率比率、铁磁层极化率等对系统磁电阻性质的影响. 关键词： 磁电阻 有机自旋电子学 极化子     

Spin injection-driven switching in a magnetic junction

We investigate a perpendicular electric current passing through a “ferromagnetic nanojunction”, that is through some layered nanosized structure of spin-valve type, containing two ferromagnetic metallic layers. Spacer may be used between the metallic layers to prevent the rotation of the moving spin phases. Such an arrangement is typical for spin valves: one of the metallic layers has strongly pinned magnetic lattice and the other one has free magnetic lattice and free mobile spins. Further the conditions are derived to provide a very high nonequilibrium spin injection level. It appears that the so-called spin resistances of the constitutive layers should be in definite relations to each other. These relations lead to the situation where the spin injection becomes dominant and significantly suppresses the “ordinary” spin-transfer torque. As a result, the threshold current becomes lowered down to 2-3 and even more orders of magnitude.     

2-2型磁电复合薄膜CoFe2O4/Pb(Zr0.53Ti0.47)O3静磁耦合

运用溶胶-凝胶法在Pt/Ti/SiO₂/Si基片上旋涂制备了2-2型CoFe₂O₄/Pb(Zr_0.53Ti_0.47)O₃磁电复合薄膜．制备的磁电薄膜结构为基片/PZT/CFO/PZT*/CFO/PZT,通过改变中间层PZT*溶胶的浓度,改变磁性层间距以及静磁耦合的大小．SEM结果表明,复合薄膜结构致密,呈现出界面清晰平整的多层结构．制备的复合薄膜具有较好的铁电与铁磁性能．实验还研究了静磁耦合对薄膜磁电性能的影响,结果表明,随着复合薄膜磁性层间距的减小,静磁耦合效应的增加,磁电电压系数有逐渐增大的趋势.     

自旋注入有机物的扩散理论

根据自旋注入半导体的相关理论， 考虑到有机体内可能同时含有带自旋的单极化子和不带自旋的双极化子两种载流子，从扩散 理论和欧姆定律出发，建立了自旋注入有机体的唯象模型.通过计算发现，适当选择铁磁层极化率或两层的电导率可以使得有机层内电流具有高的自旋极化.进一步研究了单极化子浓度等因素对注入电流极化的影响. 关键词： 自旋电子学 自旋注入 有机聚合物 极化子