Dislocation spectroscopy of crystals

A new method of studying the energy characteristics of dislocations is proposed, which is based on the investigation of the interaction of moving dislocations with purposefully introduced electronic and hole centers. A study has been made of KCl, NaCl, KBr, LiF, and KI alkali halide crystals containing electronic F and hole V _K and Me ⁺⁺ (Cu⁺⁺, Ag⁺⁺, Tl⁺⁺, In⁺⁺) centers. Investigation of the temperature dependence of the dislocation interaction with the F centers permitted determination of the position of the dislocation-induced electronic band (DEB) in the band diagram of the crystal. In KCl, the DEB is separated by ≈2.2 eV from the conduction-band minimum. It is shown that dislocations transport holes from the centers lying below the dislocation-induced hole band (DHB) (X ⁺, In⁺⁺, Tl⁺⁺, V _K) to those above the DHB (the Cu⁺ and Ag⁺ centers). Such a process is temperature independent. The DHB position in the crystal band diagram has been determined; in KCl it is separated by ≈1.6 eV from the valence-band top. The effective radii of the dislocation interaction with the electronic F and hole X ⁺, V _K, and Tl⁺⁺ centers have been found. Fiz. Tverd. Tela (St. Petersburg) 41, 2139–2146 (December 1999)     

Optical properties and stable,broadly tunable cw laser operation of new FA-type centers in Tl+-doped alkali halides

A new group of complex color centers with F_A-type properties, involving simple center production and high thermal and optical stabilities, has been found in six Tl⁺-doped alkali halides: NaCl, KCl, RbCl, KBr, RbBr and RbI. In its first tested examples, KCl and KBr, broadly tunable cw laser operation over the 1.4 to 1.7 μm range has been obtained, with output powers in the 100 mW range. In contrast to already existing F⁺₂ and F⁺₂-like centers, operating in the same wavelength range, the new F_A(Tl⁺) lasers are optically stable and do not show any bleaching effects under laser operation.     

Stimulated self-trapped exciton emission in CsI:Pb

Defects of the type of V_K and Pb⁺ centres were created in CsI:Pb under the 4.03 eV XeCl laser line irradiation at 10 K. After irradiation, the self-trapped and localized exciton emission excited by the same XeCl laser line was observed as a result of the recombination of electrons, optically released from Pb⁺, with the V_K centres. A strongly superlinear dependence of the emission intensity on the excitation intensity was found for the 3.65 eV emission of the self-trapped exciton. A much weaker superlinearity was observed for the visible localized exciton emission. Optical amplification of the exciton emission was considered as the most probable reason of the observed phenomenon. At 10 K, optical gain G=3.74 was calculated for the self-trapped exciton emission.     

FA(Ga+,In+,Tl+) tunable laser activity and interaction of halogen atoms (F,Cl,Br,I,At) at the (001) surface of KCl crystal: ab initio calculations

An attempt has been made to examine F_A(Ga⁺,In⁺,Tl⁺) tunable laser activity and adsorptivity of halogen atoms (F,Cl,Br,I,At) at the (0 0 1) surface of KCl crystal using an embedded cluster model, CIS and density functional theory calculations with effective core potentials. The ion clusters were embedded in a simulated Coulomb field that closely approximates the Madelung field at the host surface. The nearest neighbor ions to the defect site were then allowed to relax to equilibrium. Based on the calculated strength of electron–phonon coupling and Stokes-shifted optical transition bands, The F_A(Tl⁺) center was found to be the most laser active in agreement with the experimental observation that the optical emissions of F_A(In⁺) and F_A(Ga⁺) centers were strongly quenched. The disappearance of the anisotropy and np splitting observed in the absorption of F_A(Ga⁺,In⁺,Tl⁺) centers were monotonically increasing functions of the size of the impurity cation. The F_A(Ga⁺,In⁺,Tl⁺) defect formation energies followed the order F_A(Ga⁺)>F_A(In⁺)>F_A(Tl⁺). The Glasner–Tompkins empirical relationship between the principal optical absorption of F centers in solids and the fundamental absorption of the host crystal was generalized to include the positive ion species. As far as the adsorptivity of the halogen atoms is concerned, the F and F_A(In⁺,Tl⁺) centers were found to change the nature of adsorption from physical adsorption to chemical adsorption. The adsorption energies were monotonically increasing functions of the electronegativity of the halogen and the amount of charge transferred from the defect-free surface. The calculated adsorption energies were explainable in terms of the electron affinity, the effective nuclear charge and the electrostatic potentials at the surface. The spin pairing mechanism played the dominant role in the course of adsorbate–substrate interactions and the KCl defect-free surface can be made semiconducting by F or F_A(In⁺,Tl⁺) surface imperfections.     

Silver aggregates and twofold-coordinated tin centers in phosphate glass: A photoluminescence study

The optical properties of silver species in various oxidation and aggregation states and of tin centers in melt-quenched phosphate glasses have been assessed by optical absorption and photoluminescence (PL) spectroscopy. Glasses containing silver and tin, or either dopant, were studied. Emission and excitation spectra along with time-resolved and temperature-dependent PL measurements were employed in elucidating the different emitting centers observed and investigating on their interactions. In regard to silver, the data suggests the presence of luminescent single Ag⁺ ions, Ag⁺-Ag⁺ and Ag⁺-Ag⁰ pairs, and nonluminescent Ag nanoparticles (NPs), where Ag⁺-Ag⁰→Ag⁺-Ag⁺ energy transfer is indicated. Tin optical centers appear as twofold-coordinated Sn centers displaying PL around 400 nm ascribed to triplet-to-singlet electronic transitions. The optically active silver centers were observed in glasses where 8 mol% of both Ag₂O and SnO, and 4 mol% of Ag₂O were added. Heat treatment (HT) of the glass with the high concentration of silver and tin leads to chemical reduction of ionic silver species resulting in a large volume fraction of silver NPs and the vanishing of silver PL features. Further characterization of such heat-treated glass by transmission electron microscopy and X-ray photoelectron spectroscopy appears consistent with silver being present mainly in nonoxidized form after HT. On the other hand, HT of the glass containing only silver results in the quenching of Ag⁺-Ag⁰ pairs emission that is ascribed to nonradiative energy transfer to Ag NPs due to the positioning of the pairs near the surface of NPs during HT. In this context, an important finding is that a faster relaxation was observed for this nanocomposite in relation to a heat-treated glass containing both silver and tin (no silver pairs) as revealed by degenerate four-wave mixing spectroscopy. Such result is attributed to Ag NP→Ag⁺-Ag⁰ plasmon resonance energy transfer. The data thus indicates that energy transfer between Ag⁺-Ag⁰ pairs and NPs is bi-directional.     

Slow components of the emission decay in fluoride crystals doped with Ce3+

Spatially separated defects created by photons with energies 6–8 eV in alkali-earth fluoride crystals doped with cerium are investigated with the help of thermoluminescence. Measuring the spectra of creation of V_k and H peaks of thermostimulated luminescence inBaF ₂:Ce³⁺. we demonstrate that photons with energies higher than 6eV induce H centers (self-trapped holes captured by interstitialF ions), whereas the formation of self-trapped holes begins on exposure to photons with energies greater than 7 eV. The influence of photoionization on theCe ³⁺ luminescence inBaF ₂, SrF₂, CaF₂, andCeF ₃ crystals is investigated in the range of photon energies 4–8 eV. An exponentialCe ³⁺-emisson decay was observed for excitation energy lying in the range 4–6 eV. Slow and fast decay components were observed under excitation by photons with energies higher than 6 eV. We believe that the slow and fast components are due to the tunnel recombination of trapped electrons with hole centers. A. P. Vinogradov Institute of Geochemistry of the Siberian Branch of the Russian Academy of Sciences. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 3, pp. 43–49, March, 2000.     

Conversion ratio to F-H center pairs from self-trapped excitons in alkali chloride crystals

Abstract

The time delayed double excitation spectroscopy has been utilized to determine the conversion ratio to F-H center pairs from self-trapped excitons(STE_L) at the lowest state (1s[sgrave]_g;a_1g). The final conversion ratios, η_F/(η_F+η_X), were 0.86, 0.49 and 0.20 for NaCl, KCl and RbCl at 14K, respectively. The conversion efficiency (η =η_F+η_X) from STE_L to F-H center pairs(η_F) and to unknown states(η_X) were 0.25, 0.90 and 0.76 for the hole excitation to π_g, while 0.03, 0.01 and 0.01 for the electron excitation to b_1u, b_2u or b_3u, in NaCl, KCl and RbCl, respectively.     

Photostimulated detection of radiation defects produced by VUV light in BaF2

Production of radiation defects in a widely used scintillation material BaF₂ has been studied by means of a combination spectroscopy of synchrotron radiation (SR) and laser, in which defects produced by SR irradiation are sensitively detected by observing the luminescence stimulated by laser light. The photostimulated luminescence arises from the recombination of self-trapped holes (V_K centers) with electrons released from trapped centers by laser light. The obtained result reveals that the production efficiency of radiation defects is drastically dependent on the excitation photon energy of valence or core excitons.     

Electronic structure of thallous centres and Tl+ - Vk recombination in KCl crystal

Parameters of impurity Tl ion required for the calculation of different thallous centres in alkali halides are obtained for the semiempirical method of the intermediate neglect of differential overlap (INDO). The electronic structure of Tl⁺, Tl²⁺ centres in KCl is calculated. The potential energy curves for the recombination of nearest Tl⁺, V_$\text{k}$ centres against the breathing vibrational mode of the V_$\text{k}$ centre are calculated. This recombination (hole trapping) is found to be nonradiative tunneling with small activation energy rather than radiative one. A number of experimental data is also discussed in the light of the present calculations.     

Luminescence and defects creation under photoexcitation of CsI : Tl crystals in Tl-related absorption bands

Characteristics of the defects created at 4.2 K by the UV-irradiation of CsI : Tl crystals in the Tl⁺-related absorption bands (by photons of 5.8-4.8 eV energy) have been studied. The dependences of the intensities of the thermally stimulated luminescence peaks appearing near 60, 90 and 125 K and of the recombination luminescence photostimulation bands peaking at 2.35, 1.92, 1.33 and 0.89 eV on the irradiation energy and duration, uniaxial stress and thallium concentration have been examined. The mechanisms of the processes, responsible for the appearance of the intense visible (2.55 and 2.25 eV) luminescence of excitons localized near Tl⁺ ions and creation of defects pairs of the type of Tl⁰-V_K and Tl⁺-V_K with various distances between the components, have been discussed.     

Formation and stabilization of F centers following direct generation of self-trapped excitons in KCl crystals

The spectrum of luminescent F centers generated in high-purity KCl crystals by 7–10.2-eV photons has been measured at 230 K. The pulsed annealing of these centers (250–550 K), as well as the dependence of the efficiency of stable F-center generation on irradiation temperature (80–500 K) has been studied. The efficiencies of F ⁻ and Cl ₃ ⁻ -center generation are maximum under direct optical creation of self-trapped excitons in the region of the Urbach intrinsicabsorption tail. Besides the exciton decay with formation of F centers and mobile H centers, a high-temperature exciton decay channel which involves creation of cation defects stabilizing the H centers has been revealed. Fiz. Tverd. Tela (St. Petersburg) 41, 433–441 (March 1999)     

Anionische Silberzentren („B-Zentren“) in Alkalihalogeniden

It is proposed that negatively charged silver ions on anion sites are responsible for theB bands found in silver doped alkalihalides. Experimental investigations confirming this model of theB center are presented. Optical absorption and emission ofB centers were measured in seven alkalihalides in the temperature range from 450 to 4 °K. Configuration coordinate diagrams were obtained for KCl, KBr, and KI. A chemical method was used to determine the charge of theB center. Thermal or optical excitation causes theB centers to dissociate into neutral silver atoms andF centers. The Ag⁰ centers are bound to interstitial positions at low temperature. At high temperature they collect together forming colloidal centers. TetragonalB _A centers were formed during optical bleaching of theB band in mixed crystals of the type KCl+ΔNaCl. Their absorption and emission spectra, optical orientation, and polarized emission were investigated. These properties are shown to be similar to those ofF _A centers.B _A fluorescence polarized almost completely in the [100] direction was observed. A Jahn-Teller splitting of theB absorption band was resolved in RbCl at low temperature. The splitting confirms the configuration5s² for the Ag^? ion. The results are compared with those for the isoelectronic centers In⁺ and Sn⁺⁺. Thin films of alkalihalides containing small amounts of silver, copper, or thallium were condensed simultaneously with alkali vapor. New bands in the UV region were found, possibly due to Cu^? and Tl^? centers.     

Luminescence spectroscopy of excitons and antisite defects in Lu3Al5O12 single crystals and single-crystal films

The nature of the intrinsic luminescence of the lutetium aluminum garnet Lu₃Al₅O₁₂ (LuAG) has been analyzed on the basis of time-resolved spectral kinetic investigations upon excitation of two model objects, LuAG single crystals and single-crystal films, by pulsed X-ray and synchrotron radiations. Due to the differences in the mechanisms and methods of crystallization, these objects are characterized by significantly different concentrations of Lu_Al antisite defects. The energy structure of luminescence centers in LuAG single crystals (self-trapped excitons (STEs), excitons localized near antisite defects, and Lu_Al antisite defects) has been established. For single-crystal LuAG films, grown by liquid-phase epitaxy from a Pb-containing flux, the energy parameters of the following luminescence centers have been determined: STEs in regular (unperturbed by the presence of antisite defects) sites of the garnet lattice and excitons localized near Pb²⁺ ions. The structure of the luminescence centers, related to the background emission of impurity Pb²⁺ ions, has also been established in the UV and visible ranges. It is suggested that, in contrast to the two-halide hole self-trapping, a self-trapped state similar to STEs in simple oxides (Al₂O₃, Y₂O₃) is formed in LuAG; this state is formed by self-trapped holes in the form of singly charged O^? ions and electrons localized at excited levels of Lu³⁺ cations.     

Thermo- and photostimulated luminescence in LiF : Mg,Ti single crystals irradiated by ions and VUV light

A coordinated study of the relaxation of optical absorption induced by vacuum ultraviolet radiation, x-rays, and α-particles, as well as of photo- and thermostimulated luminescence (TSL) of LiF : Mg, Ti crystals (TLD-100) in the 295–750-K interval, has revealed that TSL regions characterized by activation energies E _a = 2.2–2.4 eV and anomalously high frequency factors p ₀ = 10²¹–10²² s^?1 alternate with regions where E _a = 1.5 eV and p ₀ = 10¹²–10¹⁴ s^?1. The relative intensities of the TSL peaks produced by UV illumination (10–17 eV) differ strongly under the conditions of selective photon-induced generation of anion excitons, free electrons and holes, or near-impurity electronic excitations. The latter are responsible for the high efficiency of tunneling radiative (involving titanium centers) or nonradiative (involving hydroxyl ions) recombination. The analysis of TSL peaks of LiF: Mg, Ti and LiF took into account two-step processes, namely, thermal dissociation of three-fluorine F ₃ ^? molecules and recombination of the products of their decay (V _K and V _F centers, H interstices).     

Optical absorption behavior of Tl<Superscript>+</Superscript> DOPED Rb(Br<Subscript>1–<Emphasis Type="Italic">x</Emphasis></Subscript>I<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>) system

The optical absorption behavior of Tl⁺ doped Rb(Br_1–x I _x ) mixed crystals (with x = 0.00, 0.05, and 0.10) grown under vacuum by slow cooling from the melt has been studied. Absorption spectra of the mixed crystals recorded at room temperature showed that the characteristic A-absorption band of Tl⁺ ions in the Rb(Br_1–x I _x ) system (0.1 mol. %) with x = 0.00 (i.e., RbBr:Tl⁺) broadened with the iodine content towards the low energy side. Changes in the absorption spectra of the mixed crystals are due to creation of some complex centers involving Tl⁺, Br^–, and I^- ions with energy levels inside the band gap while forming the mixed crystal. The absorption spectra of gamma-irradiated mixed crystals showed the F-band, which shifted towards the low energy side due to the existence of iodine ions in the mixed crystals.     

Intrinsic ultraviolet luminescence from Lu2O3, Lu2SiO5 and Lu2SiO5:Ce

Radioluminescence and thermally stimulated luminescence measurements on Lu₂O₃, Lu₂SiO₅ (LSO) and Lu₂SiO₅:Ce³⁺ (LSO:Ce) reveal the presence of intrinsic ultraviolet luminescence bands. Characteristic emission with maximum at 256 nm occurs in each specimen and is attributed to radiative recombination of self-trapped excitons. Thermal quenching of this band obeys the Mott-Seitz relation yielding quenching energies 24, 38 and 13 meV for Lu₂O₃, LSO and LSO:Ce, respectively. A second intrinsic band appears at 315 nm in LSO and LSO:Ce, and at 368 nm in Lu₂O₃. Quenching curves for these bands show an initial increase in peak intensity followed by a decrease. Similarity in spectral peak position and quenching behavior indicate that this band has a common origin in each of the samples and is attributed to radiative recombination of self-trapped holes, in agreement with previous work on similar specimens. Comparison of glow curves and emission spectra show that the lowest temperature glow peaks in each specimen are associated with thermal decay of self-trapped excitons and self-trapped holes. Interplay between the intrinsic defects and extrinsic Ce³⁺ emission in LSO:Ce is strongly indicated.     

Low-temperature investigation of electronic excitations in wide-gap materials doped with RE3+ or Cr3+ ions

The processes of photon multiplication in insulators have been considered. The luminescence of Tb³⁺ ions (⁵ D ₃ → ⁷ F _J , ⁵ D ₄ → ⁷ F _J transitions) upon intracenter excitation, the optical excitation of oxyanions, or the formation of separated electrons and holes has been studied for CaSO₄ doped with Tb³⁺ and Na⁺ ions at 6–9 K. An increase in Tb³⁺ concentration from 0.2 to 4 at % and transition from single Tb³⁺-Na⁺ states to centers that contain two or three terbium ions leads to the redistribution of the luminescence intensities in favor of the ⁵ D ₄ → ⁷ F _J transitions and increase in their efficiency due to the possibility of the cooperative ⁵ D ₃ → ⁵ D ₄ and ⁷ F ₆ → ⁷ F _J transitions and the 4f ⁷5d ¹ → ⁵ D ₃ and ⁷ F ₆ → ⁵ D ₄ transitions in the two- and three-terbium centers. Based on the example of MgO single crystals with highly mobile excitons, holes, and electrons, the migration of free excitons and holes toward Cr³⁺ ions in the crystal bulk and their exit from the bulk to the surface have been revealed at 9 K. Surface losses limit the luminescence quantum yield of MgO:Cr³⁺, CaSO₄:Tb³⁺, and many other materials.     

EPR spectra of colour centres in x-irradiated BaCl2:K+ and BaCl2:Ag+

X-irradiation at 80°K leads to the formation of V_K centres and, in addition, perturbed F centres in the case of BaCl₂:K⁺. The V_K centres spectra exhibit a superhyperfine structure. A warming to 130°K of crystals X-irradiated at 80°K causes the V_K centres to be perturbed, and besides leads to the formation of (AgCl₄)^2? complexes in BaCl₂:Ag⁺.     

Color centers in heavily irradiated CsI(Tl) crystals

The absorption and luminescence properties of CsI(Tl) crystals colored by irradiation are studied by the method of the time-resolved spectroscopy. The scheme of the electron transitions in CsI(Tl) crystal is suggested to explain the appearance of the color centers under exposure to the near-UV light. It is established that either of the two types activator color centers holds the charge carrier with opposite sign. The model of the hole Tl²⁺v_c⁻ activator color center is suggested. According to the model the positive charge of Tl²⁺ ion is compensated by the negative charge of a close cation vacancy v_c⁻. The color center emission reveals in the cathode-luminescence spectrum of the colored CsI(Tl) crystal. The high-dose irradiation of CsI(Tl) crystal results in the reduction of the decay time of the near-thallium self-trapped excitons (STE) emission. The decay kinetics of Tl²⁺v_c⁻ emission contains the time components typical for the decay kinetics of near-thallium STE emission. The reason of the observed effects is the energy transfer from the near-thallium STE excitons to the color centers via the inductive-resonant mechanism.     

Creation and optical properties of stable and metastable hole-trapped centres in beryllium oxide

Abstract

The paper is devoted to study of formation mechanisms and optical absorption of the hole-trapped centers in neutron, electron-impulse and X-irradiated BeO crystals. V⁰ and V^? centers are found out to be formed as a result of neutron irradiation creating cation Frenkel pairs. Within the transient absorption decay kinetics, we registered a component whose thermal-time properties coincide with those of the luminescence of triplet self-trapped excitons. A number of absorption bands from the V_B center and exciton hole nucleus are interpreted as transitions between the O^? ion p-levels splitted by the crystal field, as well as polaron transitions and transitions into the valence band.