Conventional techniques for transverse mode discrimination rely on introducing differential external losses to the different competing mode sets, enforcing single‐mode operation at the expense of additional losses to the desirable mode. We show how a parity‐time (PT) symmetric design approach can be employed to achieve single mode lasing in transversely multi‐moded microring resonators. In this type of system, mode selectivity is attained by judiciously utilizing the exceptional point dynamics arising from a complex interplay of gain and loss. The proposed scheme is versatile, robust to deviations from PT symmetry such as caused by fabrication inaccuracies or pump inhomogeneities, and enables a stable operation considerably above threshold while maintaining spatial and spectral purity. The experimental results presented here were obtained in InP‐based semiconductor microring arrangements and pave the way towards an entirely new class of chip‐scale semiconductor lasers that harness gain/loss contrast as a primary mechanism of mode selectivity.
One of the challenges of the modern photonics is to develop all‐optical devices enabling increased speed and energy efficiency for transmitting and processing information on an optical chip. It is believed that the recently suggested Parity‐Time (PT) symmetric photonic systems with alternating regions of gain and loss can bring novel functionalities. In such systems, losses are as important as gain and, depending on the structural parameters, gain compensates losses. Generally, PT systems demonstrate nontrivial non‐conservative wave interactions and phase transitions, which can be employed for signal filtering and switching, opening new prospects for active control of light. In this review, we discuss a broad range of problems involving nonlinear PT‐symmetric photonic systems with an intensity‐dependent refractive index. Nonlinearity in such PT symmetric systems provides a basis for many effects such as the formation of localized modes, nonlinearly‐induced PT‐symmetry breaking, and all‐optical switching. Nonlinear PT‐symmetric systems can serve as powerful building blocks for the development of novel photonic devices targeting an active light control.
High power single mode quantum cascade lasers with a narrow far field are important for several applications including surgery or military countermeasure. Existing technologies suffer from drawbacks such as operation temperature and scalability. In this paper we introduce a fabrication approach that potentially solves simultaneously these remaining limitations. We demonstrate and characterize deep etched, buried photonic crystal quantum cascade lasers emitting around a wavelength of 8.5 μm. The active region was dry etched before being regrown with semi‐insulating Fe:InP. This fabrication strategy results in a refractive index contrast of 10% allowing good photonic mode control, and simultaneously provides good thermal extraction during operation. Single mode emission with narrow far field pattern and peak powers up to 0.88 W at 263 K were recorded from the facet of the photonic crystal laser, and lasing operation was maintained up to room temperature. The lasing modes emitted from square photonic crystal mesas with a side length of 550μm, were identified as slow Bloch photonic crystal modes by means of three‐dimensional photonic simulations and measurements.
Leaky modes are below‐cutoff waveguide modes that lose part of their energy to the continuum of radiation modes during propagation. In photonic nanowire lasers, leaky modes have to compete with almost lossless above‐cutoff modes and are therefore usually prevented from crossing the lasing threshold. The situation is drastically different in plasmonic nanowire systems where the above‐cutoff plasmonic modes are very lossy because of their strong confinement to the metal surface. Due to gain guiding, the threshold gain of the hybrid electric leaky mode does not increase strongly with reduced wire diameter and stays below that of all other modes, making it possible to observe leaky‐mode lasing. Plasmonic ZnO nanowire lasers operating in the gain‐guided regime could be used as coherent sources of surface plasmon polaritons at the nanoscale or as surface plasmon emitting diodes with an emission angle that depends on the nanowire diameter and the color of the surface plasmon polariton.
We experimentally demonstrate an optically‐pumped III‐V/Si vertical‐cavity laser with lateral emission into a silicon waveguide. This on‐chip hybrid laser comprises a distributed Bragg reflector, a III‐V active layer, and a high‐contrast grating reflector, which simultaneously funnels light into the waveguide integrated with the laser. This laser has the advantages of long‐wavelength vertical‐cavity surface‐emitting lasers, such as low threshold and high side‐mode suppression ratio, while allowing integration with silicon photonic circuits, and is fabricated using CMOS compatible processes. It has the potential for ultrahigh‐speed operation beyond 100 Gbit/s and features a novel mechanism for transverse mode control.
The progress on multi‐wavelength quantum cascade laser arrays in the mid‐infrared is reviewed, which are a powerful, robust and versatile source for next‐generation spectroscopy and stand‐off detection systems. Various approaches for the array elements are discussed, from conventional distributed‐feedback lasers over master‐oscillator power‐amplifier devices to tapered oscillators, and the performances of the different array types are compared. The challenges associated with reliably achieving single‐mode operation at deterministic wavelengths for each laser element in combination with a uniform distribution of high output power across the array are discussed. An overview of the range of applications benefiting from the quantum cascade laser approach is given. The distinct and crucial advantages of arrays over external cavity quantum cascade lasers as tunable single‐mode sources in the mid‐infrared are discussed. Spectroscopy and hyperspectral imaging demonstrations by quantum cascade laser arrays are reviewed.
High performance semiconductor lasers on silicon are critical elements of next generation photonic integrated circuits. Transfer printing methods provide promising paths to achieve hybrid integration of III‐V devices on Si platforms. This paper presents materials and procedures for epitaxially releasing thin‐film microscale GaAs based lasers after their full fabrication on GaAs native substrates, and for subsequently transfer printing arrays of them onto Si wafers. An indium‐silver based alloy serves as a thermally conductive bonding interface between the lasers and the Si, for enhanced performance. Numerical calculations provide comparative insights into thermal properties for devices with metallic, organic and semiconductor interfaces. Under current injection, the first of these three interfaces provides, by far, the lowest operating temperatures. Such devices exhibit continuous‐wave lasing in the near‐infrared range under electrical pumping, with performance comparable to unreleased devices on their native substrates.
Nanoscale lasers are attractive for their potential applications in highly integrated photonic devices and systems. Here, nanolaser arrays are realized based on individual waved CdS nanoribbons (NRs) with periodically modulating thickness along the length direction. Microstructure investigations reveal that such a waved NR is formed with triangular‐prism‐like ridges alternately assembled on both sides of a surface flat nanoribbon. Under the focused laser (488 nm) excitation, the emitted light is guided along the length of the waved ribbons and can be well confined into theses ridges, being reflected and leaked out at their ends along both the lateral sides of the NRs. Polarization measurements further demonstrate the formation of the cavities along the length of the ridges. Under pulse laser excitation, the confined light in all these parallel ridges can resonate and realize lasing, forming a nanolaser array based on these individual waved NRs. These nanolasers arrays have potential applications in highly integrated photonics, signal processing, and high‐throughput sensing.
Narrow‐linewidth lasers are key elements in optical metrology and spectroscopy. Spectral purity of these lasers determines accuracy of the measurements and quality of collected data. Solid state and fiber lasers are stabilized to relatively large and complex external optical cavities or narrow atomic and molecular transitions to improve their spectral purity. While this stabilization technique is rather generic, its complexity increases tremendously moving to longer wavelenghts, to the infrared (IR) range. Inherent increase of losses of optical materials at longer wavelengths hinders realization of compact, room temperature, high finesse IR cavities suitable for laser stabilization. In this paper, we report on demonstration of quantum cascade lasers stabilized to high‐Q crystalline mid‐IR microcavities. The lasers operating at room temperature in the 4.3‐4.6 μm region have a linewidth approaching 10 kHz and are promising for on‐chip mid‐IR and IR spectrometers.
This article presents a novel III‐V on silicon laser. This work exploits the phenomenon that a passive silicon cavity, side‐coupled to a III‐V waveguide, will provide high and narrow‐band reflectivity into the III‐V waveguide: the resonant mirror. This results in an electrically pumped laser with a threshold current of 4 mA and a side‐mode suppression ratio up to 48 dB.
The rise of semiconductor‐based pump sources such as InxGa1‐xN‐laser diodes or frequency‐doubled optically pumped semiconductor lasers with emission wavelengths in the blue encourages a revisitation of the rare‐earth ions Pr3+, Sm3+, Tb3+, Dy3+, Ho3+ and Er3+ with respect to their properties as active ions in crystalline solid‐state laser materials with direct emission in the visible spectral range. Nowadays, some of these blue‐pumped visible lasers compete with Nd3+‐lasers in terms of efficiency and direct lasing at various colors from the cyan‐blue to the deep red can be addressed in very simple and compact laser setups. This paper highlights the spectroscopic properties of suitable rare‐earth ions for visible lasing and reviews the latest progress in the field of blue‐pumped visible rare‐earth doped solid‐state lasers.
An analytical model is presented describing the temporal intensity contrast determined by amplified spontaneous emission in high‐intensity laser systems which are based on the principle of chirped pulse amplification. The model describes both the generation and the amplification of the amplified spontaneous emission for each type of laser amplifier. This model is applied to different solid state laser materials which can support the amplification of pulse durations . The results are compared to intensity and fluence thresholds, e.g. determined by damage thresholds of a certain target material to be used in high‐intensity applications. This allows determining if additional means for contrast improvement, e.g. plasma mirrors, are required for a certain type of laser system and application. Using this model, the requirements for an optimized high‐contrast front‐end design are derived regarding the necessary contrast improvement and the amplified “clean” output energy for a desired focussed peak intensity. Finally, the model is compared to measurements at three different high‐intensity laser systems based on Ti:Sapphire and Yb:glass. These measurements show an excellent agreement with the model.
We report on the realisation of ultra‐small‐mode‐volume tunable dye lasers based on hemispherical open microcavities. The cavity mode volume is of the order of cubic micrometers, such that self‐diffusion of the dye molecules allows continuous wave operation over several minutes without the need for driven circulation. Such micro lasers could be integrated into lab‐on‐a‐chip devices. A rate‐equation model that incorporates the diffusion mechanism is used to predict the effect of the microcavity parameters on the lasing threshold.
In this work, we report optomechanical coupling, resolved sidebands and phonon lasing in a solid‐core microbottle resonator fabricated on a single mode optical fiber. Mechanical modes with quality factors (Qm) as high as 1.57 × 104 and 1.45 × 104 were observed, respectively, at the mechanical frequencies and . The maximum Hz is close to the theoretical lower bound of 6 × 1012 Hz needed to overcome thermal decoherence for resolved‐sideband cooling of mechanical motion at room temperature, suggesting microbottle resonators as a possible platform for this endeavor. In addition to optomechanical effects, scatter‐induced mode splitting and ringing phenomena, which are typical for high‐quality optical resonances, were also observed in a microbottle resonator.
Optically levitated nanodiamonds with nitrogen‐vacancy centers promise a high‐quality hybrid spin‐optomechanical system. However, the trapped nanodiamond absorbs energy from laser beams and causes thermal damage in vacuum. It is proposed here to solve the problem by trapping a composite particle (a nanodiamond core coated with a less absorptive silica shell) at the center of strongly focused doughnut‐shaped laser beams. Systematical study on the trapping stability, heat absorption, and oscillation frequency concludes that the azimuthally polarized Gaussian beam and the linearly polarized Laguerre‐Gaussian beam LG03 are the optimal choices. With our proposal, particles with strong absorption coefficients can be trapped without obvious heating and, thus, the spin‐optomechanical system based on levitated nanodiamonds are made possible in high vacuum with the present experimental techniques.
We investigate the fractional Schrödinger equation with a periodic ‐symmetric potential. In the inverse space, the problem transfers into a first‐order nonlocal frequency‐delay partial differential equation. We show that at a critical point, the band structure becomes linear and symmetric in the one‐dimensional case, which results in a nondiffracting propagation and conical diffraction of input beams. If only one channel in the periodic potential is excited, adjacent channels become uniformly excited along the propagation direction, which can be used to generate laser beams of high power and narrow width. In the two‐dimensional case, there appears conical diffraction that depends on the competition between the fractional Laplacian operator and the ‐symmetric potential. This investigation may find applications in novel on‐chip optical devices.
A spaser is a nanoplasmonic counterpart of a laser, with photons replaced by surface plasmon polaritons and a resonant cavity replaced by a metallic nanostructure supporting localized plasmonic modes. By combining analytical results and first‐principle numerical simulations, we provide a comprehensive study of the ultrafast dynamics of a spaser. Due to its highly‐nonlinear nature, the spaser is characterized by a large number of interacting degrees of freedom, which sustain a rich manifold of different phases we discover, describe and analyze here. In the regime of strong interaction, the system manifests an irreversible ergodic evolution towards the configuration where energy is equally shared among all the available degrees of freedom. Under this condition, the spaser generates ultrafast vortex‐like lasing modes that are spinning on the femtosecond scale and whose direction of rotation is dictated by quantum noise. In this regime, the spaser acquires the character of a nanoparticle with an effective spin. This opens up a range of interesting possibilities for achieving unidirectional emission from a symmetric nanostructure, stimulating a broad range of applications for nanoplasmonic lasers as unidirectional couplers and random information sources.
Femtosecond laser machining has been widely used for fabricating arbitrary 2.5 dimensional (2.5D) structures. However, it suffers from the problems of low fabrication efficiency and high surface roughness when processing hard materials. To solve these problems, we propose a dry‐etching‐assisted femtosecond laser machining (DE‐FsLM) approach in this paper. The fabrication efficiency could be significantly improved for the formation of complicated 2.5D structures, as the power required for the laser modification of materials is lower than that required for laser ablation. Furthermore, the surface roughness defined by the root‐mean‐square improved by an order of magnitude because of the flat interfaces of laser‐modified regions and untreated areas as well as accurate control during the dry‐etching process. As the dry‐etching system is compatible with the IC fabrication process, the DE‐FsLM technology shows great potential for application in the device integration processing industry.
In recent years laser light has been used to control the motion of electron waves. Electrons can now be diffracted by standing waves of light. Laser light in the vicinity of nanostructures is used to affect free electrons, for example, femto‐second and atto‐second laser‐induced electrons are emitted from nanotips delivering coherent fast electron sources. Optical control of dispersion of the emitted electron waves, and optically controlled femto‐second switches for ultrafast electron detection are proposed. The first steps towards electron accelerators and matter optics on‐a‐chip are now being taken. New research fields are driven by these new technologies. One example is the optical generation of electron pulses on‐demand and quantum degenerate pulses. Another is the emerging development of interaction free electron microscopy. This review will focus on the field of free electron quantum optics with technologies at the interplay of lasers, electron matter waves, and nanostructures. Questions that motivate their development will also be addressed.
