Silver sulphide growth on Ag(111): A medium energy ion scattering study

The interaction of S₂ with Ag(111) under ultra-high vacuum conditions has been investigated by medium energy ion scattering (MEIS). 100 keV He⁺ MEIS measurements provide a direct confirmation of a previous report, based on thermal desorption, that the growth of multilayer films of Ag₂S occurs through a continuous corrosion process. These films show a commensurate (√7 × √7)R19° unit mesh in low energy electron diffraction, consistent with the epitaxial growth of (111) layers of the high-temperature F-cubic phase of Ag₂S. The substantial range of co-existing film thicknesses found indicates that the growth must be in the form of variable-thickness islands. The use of 100 keV H⁺ incident ions leads to a very rapid decrease in the sulphide film thickness with increasing exposure that we attribute to an unusual chemical leaching, with implanted H atoms interacting with S atoms and desorption of H₂S from the surface.     

Measurement of the sputter yield after mild ion erosion of a pristine Cu(001) surface

Using the STM technique we have determined the sputter yield on a pristine Cu(001) surface after mild (fluence less than 0.044 ions per surface atom) bombardment of the pristine surface with 800 eV Ar⁺ions at normal incidence. The experiments have been performed at substrate temperatures ranging from 200 to 350 K. Making use of the positional correlation of adatoms and surface vacancies, at 200 K and 325 K, we concluded that about 1/3 of the surface adatoms originate from interstitials arriving at the surface and they give a direct indication of the buried bulk vacancies. A careful analysis of the different areas for surface vacancies and adatom then allowed a quantitative evaluation of the sputter yield at 1.2 Cu atoms per 800 eV Ar⁺ ion.     

AFM study of a SiC film grown on Si(1 0 0) surface using a C2H4 beam

A 3C-silicon carbide (SiC) thin film grown on a Si(1 0 0) surface using an ethylene (C₂H₄) molecular beam has been studied by atomic force microscopy. At the center of the irradiation area of the ethylene beam, the shape of the SiC islands was rectangular, the average length of which was 74.5 nm and the average height was 13.1 nm. Each SiC island consists of the SiC particles with the average diameter of 17 nm. Just inside of the boundary region of the beam irradiation, the average size and height of the islands decreased to 50.1 and 8.2 nm, respectively. Just outside of the boundary region, the average size and height decreased to 17.7 and 5.1 nm, respectively. The average reaction probabilities at the above three points were estimated to be 0.14, 0.27 and 2.7%, respectively. New growth mode of the crystal growth is proposed (particles gathering island mode).     

Li3+ ion irradiation effects on ionic conduction in P(VDF–HFP)–(PC + DEC)–LiClO4 gel polymer electrolyte system

Swift heavy ion irradiation of P(VDF–HFP)–(PC + DEC)–LiClO₄ gel polymer electrolyte system with 48 MeV Li³⁺ ions having five different fluences was investigated with a view to increase the Li⁺ ion diffusivity in the electrolyte. Irradiation with swift heavy ion (SHI) shows enhancement of conductivity at lower fluences and decrease in conductivity at higher fluences with respect to unirradiated polymer electrolyte films. Maximum room temperature (303 K) ionic conductivity is found to be 2.2 × 10^− 2 S/cm after irradiation with fluence of 10¹¹ ions/cm². This interesting result could be ascribed to the fluence-dependent change in porosity and to the fact that for a particular ion beam with a given energy higher fluence provides critical activation energy for cross-linking and crystallization to occur, which results in the decrease in ionic conductivity. The XRD results show decrease in the degree of crystallinity upon ion irradiation at low fluences (≤ 10¹¹ ions/cm²) and increase in crystallinity at high fluences (> 10¹¹ ions/cm²). The scanning electron micrographs (SEM) exhibit increased porosity of the polymer electrolyte films after low fluence ion irradiation.     

Nanostructures on GaAs surfaces due to 60 keV Ar+-ion beam sputtering

The effect of 60 keV Ar⁺-ion beam sputtering on the surface topography of p-type GaAs(1 0 0) was investigated by varying angle of incidence of the ion (0–60°) with respect to substrate normal and the ion fluence (2 × 10¹⁷–3 × 10¹⁸ ions/cm²) at an ion flux of 3.75 × 10¹³ ions/cm²-s. For normal incidence and at a fluence of 2 × 10¹⁷ ions/cm², holes and islands are observed with the former having an average size and density of 31 nm and 4.9 × 10⁹ holes/cm², respectively. For 30° and 45° off-normal incidence, in general, a smooth surface appears which is unaffected by increase of fluence. At 60° off-normal incidence dots are observed while for the highest fluence of 3 × 10¹⁸ ions/cm² early stage of ripple formation along with dots is observed with amplitude of 4 nm. The applicability and limitations of the existing theories of ion induced pattern formation to account for the observed surface topographies are discussed.     

Epitaxial SiC formation induced by medium energy ions on Si(1 1 1) at room temperature

In the search for silicon technology compatible substrate for III-nitride epitaxy, we present a proof-of-concept for forming epitaxial SiC layer on Si(1 1 1). A C/Si interface formed by ion sputtering is exposed to 100-1500 eV Ar⁺ ions, inducing a chemical reaction to form SiC, as observed by core-level X-ray photoelectron spectroscopy (XPS). Angle dependent XPS studies shows forward scattering feature that manifest the epitaxial SiC layer formation, while the valence band depicts the metal to insulator phase change.     

In-situ formation of SiC nanocrystals by high temperature annealing of SiO2/Si under CO: A photoemission study

We have studied CO interaction with SiO₂/Si system at high temperature (~ 1100 °C) and 350 mbar by core-level photoemission. Even for short annealing time (5 min) the signal from Si2p and C1s core levels shows a clear change upon CO treatment. Shifted components are attributed to formation of SiC. This is confirmed by TEM imaging which further shows that the silicon carbide is in the form of nano-crystals of the 3C polytype. Photoemission spectroscopy moreover reveals the formation of silicon oxicarbide which could not be evidenced by other methods. Combining these results with previous Nuclear Resonance Profiling study gives a deeper insight into the mechanisms involved in the nanocrystals growth and especially for the reaction equation leading to SiC formation. We show that CO diffuses as a molecule through the silica layer and reacts with the silicon substrate according the following reaction: 4 CO + 4 Si → SiO₂ + 2SiC + SiO₂C₂.     

Emission mechanism of radiophotoluminescence in Ag-doped phosphate glass

The objective of this study is to investigate the emission mechanism of radiophotoluminescence (RPL) in the Ag⁺-doped phosphate glass (glass dosimeter), which is now used as individual radiation dosimeter, because the emission mechanism of RPL in glass dosimeter was not fully understood. Optical properties such as optical absorption spectrum, RPL spectrum and change of RPL spectrum as a function of X-ray irradiation dose were measured for commercially available glass dosimeter. In this study, we discuss the emission mechanism of two RPL peaks at 460 nm and 560 nm, based on the fact that electrons and holes produced by X-ray irradiation are trapped at Ag⁺ ions to produce Ag⁰ and Ag²⁺ ions, respectively, when the Ag⁺-doped phosphate glass is exposed to X-ray. We would like to propose the emission mechanism of RPL peaks at 460 nm and 560 nm, concerning with Ag²⁺ and Ag⁰ ions.     

Metastable helium atom scattering from Ni(1 1 0) surface

The survival probability (SP) of metastable helium atoms (He¹) during scattering from the clean, alkalated and oxygen-adsorbed Ni(1 1 0) surfaces has been examined in the kinetic energy range of 50–400 meV. The measurements were carried out using a time-of-flight technique and a pulsed-discharge type metastable helium atom source. The SP is nearly constant for a kinetic energy (E_kin) of 50–100 meV and decreases exponentially with the increase in E_kin at 100–400 meV. It has been shown that the SP at E_kin=100–400 meV depends on the repulsive part of the He¹-surface interaction potential.     

Anomalous scaling behaviour of cobalt cluster size distributions on graphite,epitaxial graphene and carbon-rich (6√3 × 6√3)R30°

The influence of the underlying interface on adsorption of cobalt (Co) is investigated by comparing the nucleation and growth of Co at room temperature on three carbon (C) surfaces, i.e. highly oriented pyrolytic graphite (HOPG), epitaxial graphene/SiC(0001) (hereafter abbreviated as EG) and precursor of EG i.e. C-rich (6√3 × 6√3)R30°/SiC(0001) (hereafter abbreviated as 6√3). On all three surfaces, Co adopts Volmer–Weber growth mode via formation of three-dimensional dome-shaped nanoclusters. Co clusters formed on 6√3 surface are smaller but denser than Co/HOPG or Co/EG. Scaling analysis reveals a critical nucleus size, i* = 1 (atom) and the smallest stable cluster (i* + 1) would be a dimer. Co/HOPG and Co/EG have the same order of magnitude for their cluster densities and sizes. Scaling analyses however show that the i* for Co/EG (i* = 3) is larger than Co/HOPG (i* = 0) and in this respect the smallest stable cluster would be tetramer and monomer respectively. This difference is attributed to the influence of an interface situated between graphene and SiC bulk. It appears that EG is more inert than HOPG towards the adsorption of Co and may act as a better substrate to host Co clusters.     

Radioluminescence of synthetic quartz related to alkali ions

The radioluminescence (RL) of synthetic quartzes (GEMMA Quartz & Crystal Company) has been measured at room temperature. Some samples were treated by electrodiffusion (“sweeping”) in order to change the concentrations of alkali ions, mainly Li⁺ and Na⁺, which in quartz are known to be linked to Al ions, substitutional for Si ions.The RL emission spectra show evidence of a role of alkali ions in affecting some specific emissions. All the spectra could be analysed as composed of four bands in the blue and UV region. Specifically, the well known blue emission at around 470 nm was seen to be composed by two bands at 430 nm (2.86 eV) and at 485 nm (2.53 eV). Effects of irradiation, during the RL measurements, were clearly seen only in the “Li swept in” sample, namely an increase in the 485 nm band intensity and a decrease in the 430 nm band one. The previously reported UV emission was detected at 355 nm (3.44 eV) in all the samples, being the most intense band in the “swept out” sample. A further UV emission was detected at 315 nm (3.94 eV), more intense in untreated samples.Possible assignments of the detected emission bands are discussed in relation to the defects of quartz, specifically focusing on the Al centres that are most affected by sweeping procedures.     

Compositional and structural medium energy ion scattering study of the temperature mediated diffusion determination at the Co/V interface in Co/V/MgO(100)

The impact of annealing at 300 °C on the elemental composition and the atomic structure of the Co/V interface in the 2.5 Å Co/70 Å V/MgO (100) system has been investigated by medium energy ion scattering (MEIS) using 100 keV He⁺ ions. By combining the experimental MEIS results with simulations we show that, while the Co/V interface is abrupt for the system kept at room temperature, annealing at 300 °C induces a strong interdiffusion leading to a Co_0.5V_0.5 surface bcc alloy with a high degree of disorder. Additionally, the MEIS data suggest that the surface of the annealed system is slightly rumpled by ~ 0.2 Å.     

Damage formation in Ge during Ar and He implantation at 15 K

Ar⁺ and He⁺ ions were implanted into Ge samples with (1 0 0), (1 1 0), (1 1 1) and (1 1 2) orientations at 15 K with fluences ranging from 1×10¹¹ to 1×10¹⁴ cm⁻² for the Ar⁺ ions and fluences ranging from 1×10¹² to 6×10¹⁵ cm⁻² for the He⁺ ions. The Rutherford backscattering (RBS) technique in the channelling orientation was used to study the damage built-up in situ. Implantation and RBS measurements were performed without changing the target temperature. The samples were mounted on a four axis goniometer cooled by a close cycle He cryostat. The implantations were performed with the surface being tilt 7° off the ion beam direction to prevent channelling effects. After each 300 keV Ar⁺ and 40 keV He⁺ implantation, RBS analysis was performed with 1.4 MeV He⁺ ions.For both the implantation ions, there is about no difference between the values found for the damage efficiency per ion for the four different orientations. This together with the high value (around 5 times higher than that found in Si), gives rise to the assumption of amorphous pocket formation per incident ion, i.e. direct impact amorphization, already at low implantation fluences. At higher fluences, when collision cascades overlap, there is a growth of the already amorphized regions.     

Simulation and measurement of AES depth profiles; a case study of the C/Ta/C/Si system

A multilayer sample (C (23.3 nm)/Ta (26.5 nm)/C (22.7 nm)/Si substrate) was submitted to AES depth profiling by Ar⁺ ions of energy 1 keV and angles of incidence of 72°, 78°, and 82°. The shapes of the as-measured depth profiles were strongly different emphasizing that the ion-bombardment conditions strongly affects the shapes of measured depth profiles. We simulated the depth profile measured at an angle of incidence of 72° by calculating the backscattering factor, applying attenuation lengths available in the literature, and simulating the ion-bombardment-induced specimen alteration with a TRIDYN simulation and a trial and error method. The good agreement between the calculated and measured depth profiles justified the method applied.     

Erbium–ytterbium co-doped fiber amplifier operating at 1550 nm with stimulated lasing at 1064 nm

A new method of controlling the amplified spontaneous emission (ASE) from Yb^3 + ions in Er^3 +/Yb^3 + co-doped fiber amplifiers is presented. The 1 μm ASE is suppressed by stimulating a laser emission at 1064 nm in a fiber amplifier, due to a positive feedback for the 1 μm signal. The results are compared to a conventional amplifier setup without any ASE control. We have shown, that applying a feedback loop in an Er^3 +/Yb^3 + co-doped fiber amplifier allows higher power scaling and provides operation without unwanted parasitic lasing effects, increasing the stability and robustness of the amplifier.     

Fabrication and luminescent properties of Al2O3:Cr3 + microspheres via a microwave solvothermal route followed by heat treatment

AlOOH:Cr^3 + powders were synthesized via a microwave solvothermal route at 433 K for 30 min and were used as the precursor and template for the preparation of γ-Al₂O₃:Cr^3 + by thermal transformation at 773 K for 2 h in air. The obtained γ-Al₂O₃ based powders were microspheres with an average diameter about 1.9 μm. Photoluminescence (PL) spectra showed that the Al₂O₃:Cr^3 + particles presented a symmetric broad R band at 696 nm without appreciable splitting when excited at 462 nm. It is shown that the 0.04 mol% of doping concentration of Cr^3 + ions in γ-Al₂O₃:Cr^3 + is optimum. According to Dexter's theory, the critical distance between Cr^3 + ions for energy transfer was determined to be 47.54 Å. Based on the corresponding PL spectrum, full width at half maximum (FWHM) of Al₂O₃:Cr^3 + (0.04 mol%) was calculated to be 3.35 nm.     

Formation of native oxide crystallites on GaSe(0 0 1) surface

The process of GaSe native oxide formation was studied using atomic-force microscopy. It was found that the oxide film growth is accompanied by a work function increase. This increase saturates in several hours. The illumination by 1 mW laser at 650 nm stimulates the oxidation process. Continuous illumination changes the work function by 1 eV and that is 2 times higher than that without irradiation. It is supposed that the oxide formation occurs at edge dislocation lines.     

YAG laser-induced β-BaB2O4 crystalline dot formation in Sm2O3–BaO–B2O3 glasses

A continuous-wave (CW) YAG laser (power: 0.75–0.9 J/s, irradiation time: 15 s–15 min) with a wavelength of 1064 nm is irradiated to 11.1Sm₂O₃·44.4BaO·44.4B₂O₃ glass, and the formation of β-BaB₂O₄ (β-BBO) crystalline dots with a diameter of 30–150 μm is confirmed from micro-Raman spectra. β-BBO crystals with around 200 μm length grow towards the interior of the glass. The incorporation of Sm³⁺ into β-BBO crystalline dots is suggested from micro-Raman and fluorescence spectra. The second harmonic generation is detected from the array (10×10=100 dots) of β-BBO crystalline dots, indicating that each crystalline dot formed by YAG laser irradiation is a nonlinear optical crystal. CW YAG laser irradiation to glass with Sm³⁺ ions is a nice technique for a spatially controlled crystal growth.     

Carbonate formation on Al2O3 thin film model catalyst supports

The formation of carbonate species on alumina upon CO and CO₂ exposure was studied by PM-IRAS and XPS, utilizing the model system of an ultrathin alumina film grown on NiAl(110). No carbonates were detected under UHV conditions, even after exposures up to 100.000 L of the gasses. In contrast, in a 100 mbar CO₂ atmosphere the formation of monodentate carbonates was identified. The surface concentration of the carbonates increased after generating defects on the alumina film by Ar⁺ ion bombardment. It is suggested that this kind of carbonate species is produced by reaction of coordinatively unsaturated O^2? ions of alumina with the C-atom of the CO₂ molecule. This is corroborated by the observation that the amount of carbonates further increased when CO₂ and oxygen were dosed simultaneously. In agreement with the “water gas shift” mechanism previously proposed for carbonate formation on high surface area alumina powders, no carbonates were detected from CO even upon mbar exposure, consistent with the absence of the required OH-groups on the model alumina support.     

Ar+, He+，S+离子轰击n-InP单晶表面的机理研究

通过X射线光电子能谱和低能电子衍射实验研究了10～180 eV的Ar⁺、 He⁺、S⁺离子轰击n-InP(100)表面, 发现S⁺离子轰击可以产生In-S组分,减轻离子轰击对表面的物理损伤.对于Ar⁺离子轰击后的表面,经过S⁺离子处理和加热过程以后,表面损伤得到了修复,最终得到了2×2的InP表面,进一步验证了S⁺离子对InP表面的修复作用.