Di-Ab-An体系远离平衡枝状形貌的演化及枝体结晶学各向异性特征研究

对钠长石(Ab)-钙长石(An)-透辉石(Di)三元体系跨相界线的不同成分点在不同的降温速度条件下快速结晶形成的枝状形貌进行了研究.透辉石为枝晶,斜长石为球粒晶.当降温速度慢于1℃/min后,枝状形貌变为板-柱状形貌(即近平衡形貌).我们的实验结果中没有观察到如E.Brener 和H.Muller等人提出的形貌演化图一样的演化规律.当成分点靠近同结线后,出现两晶共结形成的"中空结构".通过光学显微镜下测试其光学性质发现,透辉石沿c轴方向延长,斜长石沿a轴延长,与晶体结构中的强键链方向一致,即快速结晶时晶体沿着结构中负离子配位多面体共角顶、共棱形成的强键链方向生长形成枝体.     

Di-Ab-An、Q-Lc体系非平衡结晶及枝晶结晶学方向测试研究

本文对两个典型的硅酸盐体系:Di(透辉石)-Ab(钠长石)-An(钙长石)体系和Q(石英)-Lc(白榴石)体中结晶物相系进行了枝状形貌、枝体结晶学方向测试及结晶能力方面的研究.通过偏光显微镜(PL)、扫描电镜(SEM)观察发现:透辉石、低鳞石英、α-方石英都发育为枝晶,而斜长石发育成放射状球粒晶和针状晶体.通过电子背散射衍射(EBSD)测试确定出透辉石是沿<001>方向发育成枝晶的主干、低鳞石英是沿<100>和<010>方向发育成枝晶主干、α-方石英是沿两个<100>方向发育成枝晶的主干.并发现两个体系在相同降温速度下的结晶能力不同.     

铝层厚度对铝诱导非晶硅薄膜晶化过程的影响

基于铝诱导非晶硅薄膜固相晶化方法,利用直流磁控溅射离子镀技术制备了Al/Si/…Al/Si/glass周期性结构的薄膜.采用真空退火炉对Al/Si多层薄膜进行了500℃退火实验,通过透射电子显微镜(TEM)分析了退火前、后Al/Si多层薄膜截面形貌的变化规律,并结合扩散过程探讨了铝层厚度对铝诱导非晶硅薄膜晶化过程的本质影响机理.研究结果表明:在铝诱导非晶硅薄膜固相晶化过程中,随退火过程的进行,Al、Si原子会沿Al/si层间界面进行互扩散运动且在Si层中达到临界浓度Cs的Al原子所在区域整体呈线形平行于Al/Si界面逐渐向铝原子扩散距离增大的方向推进;随着Al层厚度的增加,Al在Si层中达到临界浓度Cs的区域整体向前推进速度加快,已扩散区域产生硅初始晶核的数量也随之增大;随Al/Si层厚比的增大,虽因铝诱导而晶化的硅薄膜均为多晶态,但非晶硅薄膜在晶化过程中的生长晶面数量增多,同时硅晶粒的尺寸有所减小.     

电化学沉积法制备镍枝晶

采用电化学沉积法制备了镍枝晶沉积物,考察了不同的试验参数对枝晶生长过程以及微观形貌的影响.结果表明,枝晶具有典型的自相似性,枝晶容易在高的电流密度下生长,电流密度高,提高了阴极过电位,有利于枝晶形成;电解液里Ni2浓度的增加,沉积层分型更加明显,制备的镍枝晶逐渐稀疏,分叉也相应减小.随着电解液温度的提高,沉积层由开放型向致密型转化.这是因为在很高电流密度下,很容易发生析氢反应,释放大量气泡;金属离子在气泡之间的空隙被还原形成多孔的沉积层.     

NaCl枝状形貌的制备及生长机理探讨

采用溶剂蒸发法,在不同的条件下分别获得了具有四次对称和二次对称的Na Cl枝晶、"Z"字形枝蔓晶以及主要由枝晶呈放射状分布的球粒晶。借助于X射线衍射仪、光学显微镜、扫描电镜以及电子背散射衍射仪(EBSD),对Na Cl枝状形貌进行了测试分析。结果表明,Na Cl球粒晶主要由主干沿着<111>方向生长的一系列枝晶组成。Na Cl晶体(111)面网由同号离子组成,且钠离子层与氯离子层相间分布,层与层之间的联结力强,且(111)的面网间距最小,是导致Na Cl枝晶优先沿<111>方向生长的主要原因。溶剂的蒸发速度等环境因素的变化对Na Cl枝状形貌的形成具有很大的影响。     

无光釉中LiAlSiO4-SiO2固溶体的枝晶研究

本文研究了无光釉中LiAlSiO4-SiO2固溶体的枝晶形貌、物相、成分、形成温度及其关系.六枝雪花状枝晶为六方晶系的β-石英固溶体,十字状枝晶为四方晶系的凯石英固溶体,即枝晶形貌反映了晶体结构的对称.枝晶的成分与基质玻璃的成分分异与形成温度和机制有关.枝晶形成时存在两种机制,其生长基元分别为原子(分子)生长或晶核切变生长.枝晶分枝程度和形成机制除与过冷度有关外,还与枝晶对称性有关.四方凯石英枝晶多以原子(分子)生长,其分枝少;六方β-石英枝晶多以晶核切变机制生长,其分枝多.     

一种翡翠仿制品-透辉石微晶玻璃显微结构及晶体化学特征的研究

利用偏光显微镜、电子探针仪及X射线粉晶衍射仪,对一种翡翠的仿制品-人造透辉石微晶玻璃的显微结构、析晶特征、化学成分及物相组成进行了研究.该微晶玻璃外观具有明显的放射状晶花,偏光显微镜下观察及BSE图像反映出透辉石微晶玻璃具有显微斑状结构,且含特征的骸晶.电子探针测试得到该材料内玻璃质基质、主晶相透辉石及少量石英的化学成分,其中透辉石内的镍含量明显高于天然翡翠.X射线粉晶衍射分析确定其主要物相为透辉石和玻璃质,与天然翡翠以硬玉、纳铬辉石等为主要矿物组成不同.     

热处理制度对透辉石微晶玻璃析晶与导热性能的影响

以SiO2、CaO和MgO为主要原料,采用传统高温熔融工艺制备了基础玻璃,并通过一步析晶热处理工艺制备了透辉石微晶玻璃.利用X射线衍射仪、电子扫描显微镜和激光导热仪分别研究了热处理温度和时间对透辉石微晶玻璃析晶和导热性能的影响.结果表明:随着热处理温度的升高,微晶玻璃的结晶度增加,晶粒尺寸增大,导热系数先增大后减小;随着热处理时间的延长,微晶玻璃的晶粒尺寸增大,导热系数先增大后减小.当热处理温度890℃,热处理时间120 min,升温速率为10℃/min,微晶玻璃晶粒尺寸为0.3～0.4μm,结晶度为79;,导热系数达到最大值2.59 W/(m·K).     

硫酸钾枝状晶的生长与EBSD测定

采用单玻片溶液蒸发法、双玻片溶液蒸发法以及凝胶法,在不同条件下分别获得了硫酸钾枝晶和枝蔓晶,并利用EBSD技术对硫酸钾枝晶和枝蔓晶的结晶学取向进行了测试和分析.研究表明:硫酸钾(K2SO4)枝晶的主干主要沿着＜ 111＞方向生长;而硫酸钾(K2SO4)枝蔓晶中,组成枝蔓晶的相邻枝晶(晶粒)之间存在典型的双晶关系,其双晶轴为＜011＞,双晶面为(053).     

钛源对CaTiO3枝晶结构的光催化性能影响

通过改变不同钛源,在无模板或表面活性剂条件下采用溶剂热法制备了CaTiO3枝晶结构.样品用X射线衍射、扫描电子显微镜和比表面积分析仪进行了表征,并用紫外-可见吸收光度计测试样品的光吸收.研究不同钛源种类对CaTiO3样品的微观结构和光降解率的影响.结果表明:钛源为钛酸丁酯所制备的CaTiO3样品呈现发育良好的枝晶结构,其降解罗丹明B溶液的降解率最高.这主要是由于样品的结晶度高、枝晶结构使其具有低的反射率,因此样品呈现出较高的光降解率.     

CsI-LiCl共晶材料的坩埚下降法生长与闪烁性能研究

本文采用坩埚下降法,在真空密封的石英坩埚中成功生长出CsI-LiCl与CsI-LiCl:Na共晶闪烁体。通过扫描电子显微镜(SEM)观察晶体微结构表明该共晶中LiCl相与CsI相存在周期性的层状排列,CsI相的厚度在5 μm左右。共晶样品的X射线激发发射谱显示在CsI-LiCl和CsI-LiCl:Na共晶样品存在缺陷发光,在CsI-LiCl样品中还观察到了纯CsI的自陷激子(STE)发光。CsI-LiCl样品在α粒子激发下的多道能谱中观察到明显的全能峰,这一结果证明CsI-LiCl共晶可用于热中子探测的潜力。     

静电纺丝法制备CeO2微纳米纤维及其除氟性能

以聚丙烯腈(PAN)为载体,六水合硝酸铈[Ce(NO₃)₃·6H₂O]为原料,采用静电纺丝法制备了Ce(NO₃)₃/PAN纤维,在空气中热处理得到CeO₂微纳米纤维,通过XRD、BET和SEM对CeO₂微纳米纤维进行表征。采用静态吸附实验探讨了CeO₂微纳米纤维去除水溶液中氟离子的性能,考察了溶液pH值、初始氟离子浓度及共存阴离子等对吸附性能的影响。结果表明,pH=3时,CeO₂微纳米纤维对F^-的吸附性能最佳,CeO₂吸附量随着F^-浓度的增大呈上升趋势。CeO₂微纳米纤维对F^-的吸附等温线遵循Langmuir模型,二级动力学模型能很好地描述CeO₂微纳米纤维对F^-的吸附过程。CeO₂微纳米纤维的除氟性能优良,可为其实际应用提供理论参考。     

First-principles coexistence simulations of supercooled liquid silicon

We perform first-principles coexistence simulations of the low-density and the high-density phases of supercooled liquid silicon and find a negative slope for the coexisting line in the temperature-pressure plane. Electron density maps and electron-localization function plots of the two phases of silicon show marked differences. The calculated differences suggest more localized electrons in the low-density liquid compared to the high-density liquid, coming from an increased population of covalent bonds, which further explain the calculated negative slope in the two phase coexistence regime. This is consistent with the presence of a pseudo-gap in low-density liquid silicon, absent in the high-density liquid which shows a metallic behavior.     

Crystal structures of thecis andtrans isomers of dithiahexahydro[3.3]metacyclophane

Structures of both thecis andtrans isomers of dithiahexahydro[3.3]metacyclophane, ?C₆H₄?CH₂SCH₂?C₆H₁₀?CH₂SCH₂?, have been determined, wherecis andtrans refer to the attachments to the cyclohexane ring. Thecis form crystallizes in the monoclinic space groupP2₁/c witha=8.4299(11)Å,b=21.772(2)Å,c=8.9724(13)Å, β=116.574(11)^o, andZ=4. Thetrans isomer packs into the monoclinic space groupP2₁ witha=8.159(16)Å,b=10.185(5)Å,c=9.558(2)Å, β=112.435(18)^o, andZ=2. The cyclohexane ring of thecis isomer is in the chair conformation, while the cyclohexane of thetrans isomer is found in a twisted boat conformation.     

CTAB与SDBS对碳酸锶粒子生长形态调控及机理研究

以表面活性剂CTAB和SDBS为化学添加剂,采用化学共沉淀法对碳酸锶晶体的生长形态进行调控,成功地制备出了实心的树枝状和花瓣为空心的花状碳酸锶粉体,并用X射线衍射(XRD)、扫描电子显微镜(SEM)和傅里叶变换红外光谱(FT-IR)等分析手段对样品进行了表征;最后重点对化学添加剂可能产生的影响机理进行了初步的探讨.结果表明,CTAB和SDBS在晶体生长的过程中能起到显著的影响作用,两者对粒子分散性能的作用效果相反,而且后者对晶体(013)和(213)晶面表面能降低的贡献明显大于前者.     

Triethyl ammonium salt of O,O′-bis(p-tolyl)dithiophosphate, [Et3NH]+[(4-MeC6H4O)2PS2]−

Triethyl ammonium Salt of O,O′-bis(p-tolyl)dithiophosphate and O,O′-bis(m-tolyl)dithiophosphate have been obtained by reaction of p- and m-cresol, respectively with P₂S₅ in toluene and have been characterized by elemental analysis, IR, ¹H and ³¹P NMR spectroscopy. The molecular structure of O,O′-bis(p-tolyl)dithiophosphate has been determined. Crystal data: [Et₃NH]⁺[(4-MeC₆H₄O)₂PS₂]⁻: Monoclinic, P2₁/c, a=15.2441(9) ?, b=10.415(2) ?, c=3.9726(9) ?, β=91.709(7)°, V=2217.5(1) ?⁻³, Z=4.Supplementary materials Additional material available from the Cambridge Crystallographic Data Centre (CCDC no. 600927 for [Et₃NH]⁺[(4-MeC₆H₄O)₂PS₂]⁻ comprises the final atomic coordinates for all atoms, thermal parameters, and a complete listing of bond distances and angles. Copies of this information may be obtained free of charge on application to The Director, 12 Union Road, Cambridge CB2 2EZ, UK (fax: +44-1223-336033; email: deposit@ccdc.cam.ac.uk or www:http://www.ccdc.cam.ac.uk).     

Crystal structure of Zn4Na(OH)6SO4Cl·6H2O

The structure of Zn₄Na(OH)₆SO₄Cl·6H₂O, a secondary mineral from Hettstedt, Germany, was determined by single-crystal X-ray diffraction. The crystals are hexagonal,a=8.413(8),c=13.095(24) Å, space group $P\bar 3$ , Z=2. The structure was refined to R=0.0554 and R_w=0.0903 for 970 reflections with I≥3σ(I). The structure can be described as zinc hydroxide layers perpendicular toc, from which sulfates and chlorides extend. The layers are held together by a system of hydrogen bonds involving hexaaquo Na⁺ ions which occupy the interlayer space.     

X-ray analysis of sideroxol from <Emphasis Type="Italic">Sideritis leptoclada</Emphasis>

Sideroxol (1), a kaurane diterpene which has the ent-7α,18-dihydroxy-15β,16β-epoxykaurane structure (MW = 320.47, C₂₀H₃₂O₃) was obtained from the acetone extract of Sideritis leptoclada plant as well as from some other Sideritis species. It crystallizes in the orthorhombic space group P2₁, 2₁, 2₁ with a = 10.967(3), b = 24.555(5), c = 6.372(4) Å, Dc = 1.240 g cm⁻³, Z = 4, and refines to R = 0.065 for 721 independent reflections. The skeleton consists of three fused six-membered rings and a five-membered ring with fused epoxide. The six membered rings exhibited slightly distorted chair conformation. In addition to sideroxol, two kaurane and five kaurene diterpenes were isolated from the hexane and acetone extracts of the studied plant.     

Photoluminescence characteristics of Mg- and Si-doped GaN thin films grown by MOCVD technique

We have studied the optical, structural and surface morphology of doped and undoped GaN thin films. The p- and n-type thin films have been successfully prepared by low-pressure MOCVD technique by doping with Mg and Si, respectively. The different carrier concentrations were obtained in the GaN thin films by varying dopant concentrations. Photoluminescence (PL) studies were carried to find the defect levels in the doped and undoped GaN thin films at low temperature. In the undoped GaN thin films, a low intensity and broad yellow band peak was observed. The donor–acceptor pair (DAP) emission and its phonon replicas were observed in both the Si or Mg lightly doped GaN thin films. The dominance of the blue and the yellow emissions increased in the PL spectra, as the carrier concentration was increased. The XRD and SEM analyses were employed to study the structural and surface morphology of the films, respectively. Both the doped and the undoped films exhibited hexagonal structure and polycrystalline nature. Mg-doped GaN thin films showed columnar structure whereas Si-doped films exhibited spherical shape grains.