光纤共振和预共振喇曼光谱

在液芯光纤内产生共振和预共振喇曼效应,喇曼光谱强度可以大幅度提高,最高可达10⁹倍.本文介绍获得光纤(预)共振喇曼光谱的可行性、实验及实验结果.用远离吸收带的激光激发获得了α甲基吡啶预共振喇曼光谱.用小功率激光(0.8mW)、低浓度溶液(9.6×10¹²mol/L)还获得了β叶红素在CS₂中的共振喇曼光谱.     

Probe Raman spectroscopy of sodium uranyl-acetate microcrystals

The technique for recording Raman spectra in uranium compounds using a probe minispectrometer with a multielement radiation detector has been developed. A selective filter, which reflects exciting laser radiation and transmits Raman signals, has been used to suppress the exciting radiation. It is shown that the technique developed makes it possible to record Raman spectra from a small amount (~10^–5 g) of sodium uranyl-acetate polycrystals in a wide spectral range for several seconds.     

Evidence of laser induced decomposition of triaminotrinitrobenzene from surface enhanced Raman spectroscopy

It is observed that the focused 632 nm laser of the confocal micro-Raman spectrometer decomposes triaminotrinitrobenzene (TATB). The temperature generated in the laser spot determined by measuring the ratio of the intensities of the anti-Stokes to Stokes spectra is too low to cause thermal decomposition. The observed decomposition is suggested to be a result of laser induced electronic excitation. The decomposition is even more severe when measured by surface enhanced Raman spectroscopy (SERS) where it results in a highly defected graphite structure. A gold coated silicon substrate having an array of pyramidal shaped holes is used to obtain surface enhanced Raman spectra of TATB deposited on the substrate as a 10^?3 molar solution of toluene.     

Laser emission efficiency of semiconductor target of gas diode in the picosecond range

Laser radiation excited in a cadmiumsulfide semiconductor target (ST) (λ = 522 nm) by a high-intensity subnanosecond electron beam (EB) with an energy of 70–150 keV has a maximum intensity of 3 · 10⁷W/cm² at an efficiency of~10%. Lasing arose at the EB exciting pulse front. The laser radiation pulse shape reproduced the EB pulse shape.     

Deep UV resonance Raman spectroscopic study of CnF2n+2 molecules: the excitation of C–C σ bond

The σ–σ* transition of C–C bond in C_nF_2n+2 molecules was studied by deep UV resonance Raman spectroscopy. With the C–C σ bond selectively excited by the deep UV laser at 177.3 nm, the resonance Raman spectra of C_nF_2n+2 molecules were obtained on our home‐assembled deep UV Raman spectrograph. The Raman bands at 1299, 1380 and 2586 cm⁻¹ due to the C–C skeletal stretching modes are evidently enhanced owing to the resonance Raman effect. Based on the resonance Raman spectra and theoretical calculation results, it is proposed that the electronic geometry of C_nF_2n+2 molecules at the σσ* excited state is displaced along the directions perpendicular and parallel to the C–C skeleton, and the excited C–C bond is not dissociative due to the delocalization of the excited electron in σ* orbital. Copyright © 2012 John Wiley & Sons, Ltd.     

Frequency and density dependent radiative recombination processes in III–V semiconductor quantum wells and superlattices

In this paper we review the radiative recombination processes occurring in semiconductor quantum wells and superlattices under different excitation conditions. We consider processes whose radiative efficiency depends on the photogenerated density of elementary excitations and on the frequency of the exciting field, including luminescence induced by multiphoton absorption, exciton and biexciton radiative decay, luminescence arising from inelastic excitonic scattering, and electron-hole plasma recombination.

Semiconductor quantum wells are ideal systems for the investigation of radiative recombination processes at different carrier densities owing to the peculiar wavefunction confinement which enhances the optical non-linearities and the bistable behaviour of the crystal. Radiative recombination processes induced by multi-photon absorption processes can be studied by exciting the crystal in the transparency region under an intense photon flux. The application of this non-linear spectroscopy gives direct access to the excited excitonic states in the quantum wells owing to the symmetry properties and the selection rules for artificially layered semiconductor heterostructures.

Different radiative recombination processes can be selectively tuned at exciting photon energies resonant with real states or in the continuum of the conduction band depending on the actual density of photogenerated carriers. We define three density regimes in which different quasi-particles are responsible for the dominant radiative recombination mechanisms of the crystal: (i) The dilute boson gas regime, in which exciton density is lower than 10¹⁰ cm^-2. Under this condition the decay of free and bound excitons is the main radiative recombination channel in the crystal. (ii) The intermediate density range (n < 10¹¹ cm^-2) at which excitonic molecules (biexcitons) and inelastic excitonic scattering processes contribute with additional decay mechanisms to the characteristic luminescence spectra. (iii) The high density range (n ?10¹² cm^-2) where screening of the Coulomb interaction leads to exciton ionization. The optical transitions hence originate from the radiative decay of free-carriers in a dense electron-hole plasma.

The fundamental theoretical and experimental aspects of the radiative recombination processes are discussed with special attention to the GaAs/Al _x Ga_1-x As and Ga _x In_1-x As/Al _y In_1-y As materials systems. The experimental investigations of these effects are performed in the limit of intense exciting fields by tuning the density of photogenerated quasi-particles and the frequency of the exciting photons. Under these conditions the optical response of the quantum well strongly deviates from the well-known linear excitonic behaviour. The optical properties of the crystal are then no longer controlled by the transverse dielectric constant or by the first-order dielectric susceptibility. They are strongly affected by many-body interactions between the different species of photogenerated quasi-particles, resulting in dramatic changes of the emission properties of the semiconductor.

The systematic investigation of these radiative recombination processes allows us to selectively monitor the many-body induced changes in the linear and non-linear optical transitions involving quantized states of the quantum wells. The importance of these effects, belonging to the physics of highly excited semiconductors, lies in the possibility of achieving population inversion of states associated with different radiative recombination channels and strong optical non-linearities causing laser action and bistable behaviour of two-dimensional heterostructures, respectively.     

Electroreflectance and Raman scattering investigation of glow-discharge amorphous Si:F:H

The electroreflectance and Raman scattering spectra of several samples of glow-discharge amorphous Si:F:H films have been investigated. We have observed for the first time modulated optical spectroscopy structure above the absorption edge for a disordered semiconductor. The energy positions of these structures, at 3.4 and 4.5 eV, correspond to peaks seen in crystalline silicon. In particular, the latter feature can be related to the degree of disorder in the material. Also we have seen for the first time in disordered silicon (except for ion-damaged, laser annealed samples) peaks in the Raman spectra intermediate between amorphous (465 cm^-1) and crystalline materials (522 cm^-1). These experimental results provide strong evidence that a-Si:F:H possesses “microcrystalline” or some other intermediate range order (i.e., an improved connectivity between the elements of the random network.)     

Resonance coherent anti-stokes Raman spectroscopy

Conditions to get Coherent Anti-Stokes Raman Spectra for strong one-photon-resonance are given. The biharmonic pump was realized by a high power ns-ruby-laser and a broadband dye-laser, focussed together into a small sample cell. Resonance Raman spectra of an extension of some hundreds cm^-1 are obtained during one laser shot, thus opening possibilities to investigate excited electronic states or short-living molecules.     

Temperature dependence of the optical properties of ZnSe films deposited on quartz substrate

ZnSe thin films were deposited by pulsed laser ablation on quartz substrate. The films were investigated by different characterization techniques, such as X-ray diffraction, Raman microspectroscopy, absorption, reflectivity, and photoluminescence spectroscopy. The XRD analysis showed the formation of cubic phase polycrystalline films. The Raman spectra confirmed the formation of ZnSe by the presence of TO and LO peaks at 202 cm^-1 and 252 cm^-1, respectively. The analysis of absorption and reflectivity measurements permits evaluation of the band gap and excitonic energy at low temperature and the temperature dependence of the energy gap. The photoluminescence measurements indicated the possibility of obtaining intrinsic band-band radiative emission up to room temperature. PACS 52.38.Mf; 78.55.-m; 78.55.Et     

Temperature dependent Raman scattering in polycrystalline Bi4Ti3O12 thin films

Polycrystalline Bi₄Ti₃O₁₂ thin films were prepared on quartz substrates by pulsed laser deposition. The films were crystallized in the orthorhombic layer perovskite structure confirmed by X-ray diffraction and Raman spectroscopy. The Raman spectra are strongly dependent on temperature. A subtle phase transition in the temperature range 473-573 K exists in polycrystalline BTO thin films, which is evidenced by the disappearance of the Raman band at 116 cm⁻¹ and appearance of a new Raman band at 151 cm⁻¹. The two broad Raman bands centered at the 57 and 93 cm⁻¹ at 300 K break up into clusters of several sharp Raman peaks at 77 K, due to monoclinic distortion of orthorhombic structure at low temperature in the as-prepared Bi₄Ti₃O₁₂ thin films.     

人血单个红细胞的共振拉曼光谱研究

给出了人血单个红细胞在不同激发光源下的共振拉曼光谱。从实验谱中得到 ,构象不灵敏的苯丙氨酸的单取代基环的伸缩振动谱线 10 0 2cm-1和吡咯环的CN呼吸振动谱带中 16 2 0cm-1的谱线 ,对 782nm激发光源共振较强 ,呈现出强度大而半高宽小的尖锐谱线 ;而在 5 14nm激发光源下 ,该两条谱线较弱。其他谱线 ,高波数段 (大于 135 0cm-1) ,在 5 14nm激发光源下 ,谱线强度大且清晰 ;低波数段 (小于 135 0cm-1) ,对应 782nm激发光源的拉曼谱线强而明显。同时还给出了同一激光光源下 ,取血后不同时间单个红细胞的拉曼光谱。发现对 782nm激发光源 ,除 16 0 1cm-1谱线强度减小外 ,其他无明显变化 ;而对 5 14nm激发光源 :一是有许多条谱线强度减小 ,二是许多条谱线向低波数移动了 4～ 10cm-1波数左右。这些实验结果 ,可以为研究单个红细胞的结构、功能及进一步研究病变细胞的变异提供有力的实验基础。     

Grating-Stabilized External Cavity Diode Lasers for Raman Spectroscopy—A Review

Abstract: Conventional Raman techniques require a continuous-wave laser with stabilized wavelength, narrow line width, and sufficient output power. Due to their miniature size and low cost, diode lasers are good choice as light sources for Raman spectroscopy, especially when compact and portable instruments are needed. However, a solitary multimode diode laser has certain drawbacks that limit its use for Raman application. To circumvent these drawbacks, an external cavity can be coupled to the active gain medium of the diode to enhance the laser performance. A grating-based external cavity allows the laser to operate in a single longitudinal mode with greatly reduced line width and stabilized wavelength. This article examines the fundamentals of semiconductor lasers to show the necessity of operating diode lasers in an external cavity for Raman applications. Two feedback grating-based external cavity diode laser (ECDL) designs, viz. Littrow and Littman-Metcalf configurations, are explained. Historic and recent progress in the development of ECDL devices is reported. An updated summary of ECDL-equipped Raman systems applied to fields such as in vivo biomedical studies and in situ process/quality control is provided. Topics on mode-hop-free continuous scanning, wavelength stabilization, and dealing with ambient conditions are discussed.     

Visible,near‐infrared,and ultraviolet laser‐excited Raman spectroscopy of the monocytes/macrophages (U937) cells

Raman spectra of the monocytes were recorded with laser excitation at 532, 785, 830, and 244 nm. The measurements of the Raman spectra of monocytes excited with visible, near‐infrared (NIR), and ultraviolet (UV) lasers lad to the following conclusions. (1) The Raman peak pattern of the monocytes can be easily distinguished from those of HeLa and yeast cells; (2) Positions of the Raman peaks of the dried cell are in coincidence with those of the monocytes in a culture cell media. However, the relative intensities of the peaks are changed: the peak centered around 1045 cm⁻¹ is strongly intensified. (3) Raman spectra of the dead monocytes are similar to those of living cells with only one exception: the Raman peak centered around 1004 cm⁻¹ associated with breathing mode of phenylalanine is strongly intensified. The Raman spectra of monocytes excited with 244‐nm UV laser were measured on cells in a cell culture medium. A peak centered at 1485 cm⁻¹ dominates the UV Raman spectra of monocytes. The ratio I₁₅₇₄/I₁₆₁₃ for monocytes is found to be around 0.71. This number reflects the ratio between proteins and DNA content inside a cell and it is found to be twice as high as that of E. coli and 5 times as high as that of gram‐positive bacteria. Copyright © 2009 John Wiley & Sons, Ltd.     

The Nanosecond Laser Flash Photolysis (LFP) Transient Spectra of Aqueous CCl4 Solution

Abstract

The Raman spectrum of polycrystalline vaterite is presented and compared to spectra of calcite and aragonite, the other two common CaCO₃ polymorphs; Raman spectroscopy easily distinguishes between these three polymorphs. An important feature of the Raman spectrum of vaterite is splitting of both the ν₁ and ν₄ peaks. The splitting of the ν1 peak implies two distinct site symmetries for the CO₃ ^?2 groups. A definitive crystal structure determination of vaterite is not yet available, but none of the three proposed structures for vaterite show such a feature.     

Raman spectroscopic studies of pulsed laser‐induced defect evolution in graphene

Raman spectra were obtained for graphene after irradiating the samples by pulsed laser (λ = 248 nm). Changes in the spectra were observed as the pulse laser energy density (PLED) was varied from 0.1 to 0.25 J/cm². Changes in bilayer graphene were accompanied by the appearance of the D peak and the broadening of the G peak. Changes in multilayer graphene are more profound as the Raman spectra changes from a multilayer to bilayer and subsequently to monolayer graphene in response to a slow increase in the PLED. The threshold PLED was found to be dependent on the number of graphene layers. We also irradiate graphene with very high PLED (much above the threshold), and the Raman spectra were found to be significantly changed. The G‐band became broader, and red shifted, while the intensity of the 2D‐band was drastically reduced and an intense defect‐related D peak appeared at about 1350 cm⁻¹. The laser ablation of graphene, both with low‐ and high‐energy intensity, is consistent with the reported theoretical predictions. Copyright © 2013 John Wiley & Sons, Ltd.     

SERS activity of pulsed laser ablated silver thin films with controlled nanostructure

The surface‐enhanced Raman scattering (SERS) activity of silver thin films deposited by the pulsed laser ablation technique was investigated. The samples were grown in a controlled Ar atmosphere at pressures ranging between 10 and 70 Pa, and changing the number of laser pulses. Different surface morphologies, from isolated nearly spherical nanoparticles (NPs) to larger islands with smooth edges, were observed by means of scanning and transmission electron microscopies, as a function of the different deposition conditions adopted. SERS measurements were performed by soaking the samples in rhodamine 6G aqueous solutions over the concentration range between 1.0 × 10⁻⁴ and 5.0 × 10⁻⁸ M . Raman spectra were acquired using both the 632.8 and 514.5 nm excitation sources. The dependence of the SERS activity of the samples on the observed surface morphology is presented and discussed. The presence of the so called hot spots is envisaged. Copyright © 2011 John Wiley & Sons, Ltd.     

Synthesis of n-type semiconducting diamond film using diphosphorus pentaoxide as the doping source

An n-type semiconducting diamond film has been synthesized by the hot filament CVD method using diphosphorus pentaoxide as the doping source. The obtained film was identified as polycrystalline diamond containing few sp² components by means of several methods including Raman spectroscopy. From measurements of the Hall effect and the Seebeck effect, the film was found to be an n-type semiconductor.Patent pending No. Heisei 1-302209     

Photoluminescence and Raman spectra of the ordered vacancy compound CuGa5Se8

We studied the photoluminescence (PL) and Raman properties of the ordered defect compound CuGa₅Se₈. Twelve peaks were detected from the room-temperature Raman spectra with the A₁ mode around 160 cm⁻¹. Due to the stress in the polycrystalline thin film the corresponding frequencies of the Raman modes of a CuGa₅Se₈ single crystal were slightly shifted. One broad asymmetric PL band at 1.788 and 1.765 eV was observed at 10 K in the PL spectra of CuGa₅Se₈ single crystal and polycrystalline layer, respectively. The temperature and laser power dependencies of the PL spectra were also studied. The shape and properties of the PL band assure the presence of potential fluctuations and the analyses of the PL data suggest that the emission is due to band-to-tail (BT) or band-to-impurity (BI) recombination.     

Synthesis and characterization of platinum nano sized particles by laser ablation in C<Subscript>2</Subscript>H<Subscript>6</Subscript>O<Subscript>2</Subscript> solution

Platinum nano sized particles (Pt NPs) are superior catalysts for many intentions, such as glucose sensors, cancer therapy, gas sensors, etc. Here, Pt NPs were produced by pulsed laser ablation in C₂H₆O₂ solution using Q-switched Nd:YAG laser, for the first time. Then, the influence of the laser fluence during synthesis of them was investigated; and they were characterized by UV–vis spectroscopy, TEM, FE-SEM, XRD, FT-IR, and Raman spectroscopy. The results showed that with increasing laser fluence, the mean particle size of the spherical NPs enhanced. Meanwhile, they had a polycrystalline cubic structure. Correspondingly, the plasmon peak position of generated NPs in the absorption spectra shifted from 257 to 266 nm, with a rise of laser fluence. The IR and Raman spectroscopy was used to achieve the information about the surface state of Pt NPs. We propose that the optimum adjusted laser fluence is an important factor to increase the ablation efficiency.