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1.
In order to understand the influence of crucible geometry combined with natural convection and Marangoni convection on melt flow pattern, temperature and pressure fields in silicon Czochralski crystal growth process, a set of numerical simulations was conducted. We carry out calculation enable us to determine temperature, pressure and velocity fields in function of Grashof and Marangoni numbers. The essential results show that the hemispherical geometry of crucible seems to be adapted for the growth of a good quality crystal and the pressure field is strongly affected by natural and Marangoni convection and it is more sensitive than temperature. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)  相似文献   

2.
The temperature gradient within a furnace chamber and the crucible pull rate are the key control parameters for cadmium zinc telluride Bridgman single crystal growth. Their effects on the heat and mass transfer in front of the solid‐liquid interface and the solute segregation in the grown crystal were investigated with numerical modeling. With an increase of the temperature gradient, the convection intensity in the melt in front of the solid‐liquid interface increases almost proportionally to the temperature gradient. The interface concavity decreases rapidly at faster crucible pull rates, while it increases at slow pull rates. Moreover, the solute concentration gradient in the melt in front of the solid‐liquid interface decreases significantly, as does the radial solute segregation in the grown crystal. In general, a decrease of the pull rate leads to a strong decrease of the concavity of the solid‐liquid interface and of the radial solute segregation in the grown crystal, while the axial solute segregation in the grown crystal increases slightly. A combination of a low crucible pull rate with a medium temperature gradient within the furnace chamber will make the radial solute segregation of the grown crystal vanish. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)  相似文献   

3.
The article presents the results of the mathematical and physical simulations of the influence of a rotating magnetic field (RMF) on the hydrodynamics and heat transfer in processes of large semiconductor single crystal growth in ampoules. Different versions of the RMF are considered, in particular, for symmetric and asymmetric positions of a RMF inductor with regard to the melt in the ampoule, for two counter-rotating magnetic fields, for different geometrical ratios in the “RMF inductor - liquid melt” system, and for different electrical conductivities of the hard walls at their contact with the melt. The interconnection between the distribution of the electromagnetic forces in the liquid volume and the formed velocity patterns, temperature distribution and shape of the solidification front is studied. An original method for the definition of the electromagnetic forces, which considers finite dimensions of the RMF inductor and melt, was used to calculate real conditions of the RMF influence on growth processes. The numerical results obtained are compared to the data of model experiments. Their satisfactory agreement permits us to propose this calculation method for the definition of the optimal parameters of a growth process under specific conditions and to select the most rational type of RMF influence.  相似文献   

4.
Heat and mass transfer taking place during growth of Y3Al5O12 (YAG) crystals by the Czochralski method, including inner radiation, is analyzed numerically using a Finite Element Method. For inner radiative heat transfer through the crystal the band approximation model and real transmission characteristics, measured from obtained crystals, are used. The results reveal significant differences in temperature and melt flow for YAG crystals doped with different dopands influencing the optical properties of the crystals. When radiative heat transport through the crystal is taken into account the melt‐crystal interface shape is different from that when the radiative transport is not included. Its deflection remains constant over a wide range of crystal rotation rates until it finally rapidly changes in a narrow range of rotation rates. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)  相似文献   

5.
In contrast with the generally accepted viewpoint, it is shown that the Coriolis force caused by rotation of an orbital station can appreciably affect natural convection and impurity distribution during the growth of crystals from a melt in orbital flight conditions. 2D and 3D steady and oscillatory convection in a rectangular enclosure is considered. The resonance phenomenon arising due to the interaction of the Coriolis force and harmonic oscillations of the gravity force is demonstrated. It is shown that for moderate values of the Ekman number the Coriolis force suppresses convection in one direction and amplifies it in the other, which in turn results in deformation of the impurity distribution over the cross-section of the crystal.  相似文献   

6.
The formation of grown‐in defects in silicon crystals is controlled by the concentration of intrinsic point defects. Under steady state conditions the type of the prevailing point defect species is linked to the ratio of pull rate and temperature gradient in the crystal at the solidification front. It has been shown that this ratio as well as computed point defect distributions are in good agreement with experimental data. In this paper we compare a coupled transient heat transfer and transient point defect transport model with quasi steady state simulations at various time steps. Both simulations show the same qualitative results, quantitative differences in temperature are less than 1 %. But already for constant pull rates the defect distributions show qualitative differences between transient and quasi steady state simulations. Therefore, for a detailed understanding how defects are related to growth conditions, the thermal history should not be neglected.  相似文献   

7.
The paper discusses a possibility to use different types of rotating magnetic fields (RMF) and combinations of these to control the hydrodynamics and heat/mass transfer in the processes of bulk semiconductor single crystal growth. Some factors contributing to the efficiency of RMF and their influence on different technologies are analyzed. Their specific practical application is illustrated by some examples.  相似文献   

8.
In order to grow benzophenone single crystal, an organic nonlinear optical material, a cost‐effective Vertical Bridgman‐Stockbarger system has been designed and fabricated by employing a two‐zone, transparent furnace made out of immiscible liquids. Transparent, optical quality benzophenone single crystals were successfully grown as a result of a suitable thermal gradient achieved by means of introducing an intermediate liquid in between the two immiscible liquids. The effect of change in the volume of the intermediate liquid thereby the thermal gradient on the growth parameters was analyzed. The quality of the grown single crystal was justified using X‐ray powder diffraction analysis, FTIR, TG‐DTA and optical transmission studies. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)  相似文献   

9.
The first fully three-dimensional solution flow and solute transport simulations are performed to model the potassium titanyl phosphate (KTP) growth system of Bordui et al. Steady flows and supersaturation fields for two crystal mounting geometries are computed using a stabilized finite element method implemented on a data-parallel supercomputer. Our results present a mechanistic picture of solute transport which is consistent with inclusion formation patterns obtained in experiments. The simulations also explain beneficial outcomes, in terms of better global mixing and more uniform surface supersaturation, observed for a crystal mounting geometry which strongly breaks cylindrical symmetry in the system.  相似文献   

10.
For the seeding process of oxide Czochralski crystal growth, influence of the crucible bottom shape on the heat generation, temperature and flow field of the system and the seed‐melt interface shape have been studied numerically using the finite element method. The configuration usually used in a real Czochralski crystal growth process consists of a crucible, active afterheater, induction coil with two parts, insulation, melt, gas and seed crystal. At first, the volumetric distribution of heat inside the metal crucible and afterheater inducted by the RF‐coil was calculated. Using this heat generation in the crucible wall as a source the fluid flow and temperature field of the entire system as well as the seed‐melt interface shape were determined. We have considered two cases, flat and rounded crucible bottom shape. It was observed that using a crucible with a rounded bottom has several advantages such as: (i) The position of the heat generation maximum at the crucible side wall moves upwards, compared to the flat bottom shape. (ii) The location of the temperature maximum at the crucible side wall rises and as a result the temperature gradient along the melt surface increases. (iii) The streamlines of the melt flow are parallel to the crucible bottom and have a curved shape which is similar to the rounded bottom shape. These important features lead to increasing thermal convection in the system and influence the velocity field in the melt and gas domain which help preventing some serious growth problems such as spiral growth. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)  相似文献   

11.
Computational analysis of three-dimensional flow and mass transfer in a non-standard configuration for growth of a KDP crystal was conducted. The results show that the surface shear stress is mainly affected by the inlet velocity, and the distribution of the surface supersaturation is determined by the bulk supersaturation and the inlet velocity. By adjusting the inlet velocity, the homogeneity of surface supersaturation can be improved, which is helpful for reducing the occurrence of inclusions and enhancing the crystal quality. The thickness of solute boundary layer is closely related to the flow intensity, but it is almost free from the impact of the bulk supersaturation.  相似文献   

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