ZnO-based terahertz quantum cascade lasers

High-power terahertz sources operating at room-temperature are promising for many applications such as explosive materials detection, non-invasive medical imaging, and high speed telecommunication. Here we report the results of a simulation study, which shows the significantly improved performance of room-temperature terahertz quantum cascade lasers (THz QCLs) based on a ZnMgO/ZnO material system employing a 2-well design scheme with variable barrier heights and a delta-doped injector well. We found that by varying and optimizing constituent layer widths and doping level of the injector well, high power performance of THz QCLs can be achieved at room temperature: optical gain and radiation frequency is varied from 108 cm^?1 @ 2.18 THz to 300 cm^?1 @ 4.96 THz. These results show that among II–VI compounds the ZnMgO/ZnO material system is optimally suited for high-performance room-temperature THz QCLs.     

Ultra-narrow-linewidth continuous-wave THz sources based on multiplier chains

We demonstrate two different sources at 1.3 THz based on multiplier chains (72nd harmonic generation), which exhibit linewidths at the level of 2×10⁻¹² in relative units. The multiplication processes are shown not to contribute significantly to this linewidth. The phase noise of one of the sources and the fractional power in the carrier (76%) were determined. The application of these sources as references for quantum cascade THz lasers and for spectroscopy of ultracold molecules is suggested. Thus, rotational spectroscopy with few Hz resolution at 1.3 THz is possible with the present easy-to-use sources. An approach for reducing the linewidth by a factor on the order of 10³ to the 1×10⁻¹⁵ level using optical technology is proposed.     

Piecewise linear integrated optical device as an optical isolator using two-port nonlinear ring resonators

A nonlinear (piecewise linear) optical transfer function for optical applications generally and isolator especially is introduced and a realization method for the introduced block based on array of two-port nonlinear ring resonators is proposed. The effect of system parameters on the transfer function is studied. The characteristics of the introduced nonlinear device such as the threshold value and the slope of linear part can be controlled using the coupling coefficients and ring lengths. We show that using our proposed idea, easily more than 30-dB isolation well over 3 THz can be obtained only with similar two rings. Also, insertion loss less than 1 dB can be obtained using optical amplifier between rings. The proposed circuit is compact (0.2 mm²) and easily can be integrated with semiconductor lasers as well as other integrated devices and systems. Finally, the analytical result for approximation of the threshold and slope of linear part is presented.     

Quadratic detection with two-photon quantum well infrared photodetectors

Two-photon quantum well infrared photodetectors (QWIPs) involving three equidistant subbands take advantage of a resonantly enhanced optical nonlinearity, which is six orders of magnitude stronger than in a bulk semiconductor. This approach results in a sensitive device to measure quadratic autocorrelation of mid-infrared optical pulses from modelocked quantum cascade lasers, nonlinear optical conversion, and free-electron lasers (FEL). We report on autocorrelation measurements at wavelengths in the mid-infrared and Terahertz regimes using ps optical pulses from the FEL at the Forschungszentrum Dresden Rossendorf. In particular, quadratic detection at wavelengths around 5.5 μm is still possible at room-temperature, which is crucial for applications in practical systems. We also report on a two-photon detector which works below the Reststrahlen band at 42 μm (7.1 THz).     

Room‐temperature terahertz emission from ZnSe‐based quantum cascade structures: A simulation study

We identified conditions for room‐temperature operation of terahertz quantum cascade lasers (THz QCLs) where variable barrier heights are used on ZnSe/Zn_1–xMg_x Se material systems. The THz QCL devices are based on three‐level two‐well design schemes. The THz QCL lasers with alternating quantum barriers with different heights were compared with THz QCL laser structures with fixed quantum barrier heights. It is found that the THz QCL device with novel design employing variable barrier heights achieved the terahertz emission of about 1.45 THz at room‐temperature (300 K), and has improved laser performance due to the suppression of thermally activated carrier leakage via higher‐energy parasitic levels. Thus, THz QCL devices employing the design with variable barrier heights may lead to future improvements of the operating temperature and performance of THz QCL lasers. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Broadband Hybridly Polarized Vector Vortex Raman Microchip Laser

Hybridly polarized (HP) vector vortex Raman lasers dramatically extend their applications on optical microscopy, optical communication, and quantum information. Spatial light modulators and waveplates are widely used for generating HP vector vortex lasers, however, the performance and beam quality of HP vector vortex lasers are restricted by diffraction loss and low damage threshold of these optical elements. Here, HP vector vortex Raman microchip lasers constructed with Yb³⁺:Y₃Al₅O₁₂ (Yb:YAG) and vanadate (YVO₄) crystals is demonstrated. The states of polarization (SoP) of HP vector vortex lasers are combination of radial and anti-radial polarizations (RP-ARP), azimuthal and anti-azimuthal polarizations (AP-AAP). The SoP of HP vector vortex lasers can be controlled by adjusting the length of YVO₄ crystal and applying pump power. Maximum output powers are 456 and 586 mW with optical efficiency of 7.1% and 9.2% for HP vector vortex lasers with SoP of RP-ARP and AP-AAP. The HP vector vortex Raman lasers with SoP of RP-ARP and AP-AAP oscillate ≈1076 nm with bandwidths of 11.4 and 10.8 nm. High beam quality is achieved for HP vector vortex lasers with measured M² nearly equal to theoretical value. The broadband HP vector vortex Raman lasers with high beam quality extend applications on optical trapping, and quantum information processing.     

High-temperature all-optical intersubband quantum well Terahertz switch

In this article an asymmetric intersubband quantum well structure as a high temperature terahertz (THz) optical switch is proposed. In our proposed structure the incoming low power energy photon (THz control signal) causes an optical switching. In this structure we introduce an optical terahertz switch based on coherent population trapping (CPT) phenomena. In the presence of electromagnetic THz field, quantum interference between the terahertz control field and short-wavelength probe field under appropriate condition, the medium becomes transparent (zero absorption) for the probe field. So the absorption and refraction characteristic of optical probe field can be modified with THz radiation. Therefore this idea is suitable for all – optical terahertz switching.     

Tensile-strained 1.3 μm InGaAs/InGaAlAs quantum well structure of high temperature characteristics

A new tensile strained InGaAs/InGaAlAs quantum well structure in the 1.3 μm wavelength region is proposed for high temperature characteristics via quantum well band structure and optical gain calculations. To obtain such features, a tensile-strained InGaAs/InGaAlAs quantum well structure, which emits light dominated by TM polarization, is considered. This proposed structure has very high temperature characteristics (T ₀ > 130 K) due to its high density of state at the first transition edge. This results clearly show the potential of tensile strained quantum well structure usage for the high temperature operation of quantum well semiconductor lasers.     

Wide-field imaging using a tunable terahertz free electron laser and a thermal image plate

The appearance of intense terahertz sources such as quantum cascade laser and free electron laser opens up new opportunities for 2D imaging. Though microbolometer and pyroelectric arrays are promising recorders, they are of small size and cannot be used when wide-field imaging in the longwave region is required. We applied for terahertz imaging 3″ × 3″ and 6″ × 6″ Macken Instruments Inc. “thermal image plates”, a set of thermal sensitive phosphor screens operating in a room temperature environment. The Novosibirsk free electron laser was used as a source of radiation. We have found that the response of thermal image plate is linear until the relative quenching is less than 60% of the initial luminescence intensity. The response curve follows the Seitz–Mott law. The threshold sensitivity was found to be 100 mW/cm² at 1.5 THz and 40 mW/cm² at 2.3 THz. Interferograms, holograms, and terahertz beam spatial distributions recorded in the spectral range of 1.2–2.5 THz are given as examples.     

Gallium-arsenide deep-center laser

In a novel approach to “thresholdless” lasers, we have developed a new growth technique for self-assembled deep centers in the technologically important semiconductor gallium-arsenide. Here we demonstrate the first gallium-arsenide deep-center laser. These lasers, which intentionally utilize gallium-arsenide deep-center transitions, exhibit a threshold of less than 2 A/cm² in continuous-wave mode at room temperature at the important 1.54 μm fiber-optic wavelength. This threshold is much lower than for bandgap transitions in conventional bulk semiconductors. It is significant that this first demonstration of broad-area laser action was accomplished with electrical injection, and not merely optical pumping, as is usual for a new material.     

Characteristics of efficient few-cycle terahertz radiation generated in as-grown nonlinear organic single crystals

We investigated efficient terahertz wave generation by optical rectification in as-grown nonlinear organic single crystal HMQ-T (2-(4-hydroxy-3-methoxystyryl)-1-methylquinolinium 4-methylbenzenesulfonate). Optimal thickness of crystals directly available by a slow cooling method in methanol solution enabled us to achieve high-field few-cycle THz waves at 800-nm pumping. With 95-mW pumping at 1-kHz repetition rate, an optical-to-THz conversion efficiency of 2.7 × 10⁻⁴ was achieved and the THz electric field strength, measured by electro-optic sampling, was as high as 110.1 kV/cm. Such an efficient THz source based on as-grown HMQ-T crystals can be used for investigation of various nonlinear phenomena in the THz spectral region.     

Continuous-wave and actively Q-switched Nd:LSO crystal lasers

With a fiber coupled laser diode array as the pump source, Nd-doped Lu₂SiO₅ (Nd:LSO) crystal lasers at ⁴F_3/2→⁴I_11/2 and ⁴F_3/2→⁴I_13/2 transitions were demonstrated. The active Q-switched dual-wavelength lasers at about 1.08 μm, as well as continuous-wave (CW) and active Q-switched lasers at 1357 nm are reported for the first time, to the best of our knowledge. Considering the small emission cross-sections and long fluorescence lifetime, this material possesses large energy storage ability and excellent Q-switched properties. The special emission wavelength at 1357 nm will have promising applications to be used in many fields, such as THz generation, pumping of Cr³⁺:LiSAF, repumping of strontium optical clock, laser Doppler velocimeter and distributed fiber sensor.     

Terahertz dual-wavelength quantum cascade laser based on GaN active region

In this paper a novel terahertz (THz) quantum cascade laser (QCL) based on GaN/AlGaN quantum wells has been proposed, which emits at two widely separated wavelengths 33 and 52 μm simultaneously in a single active region. The large LO-phonon energy (～90 meV), the ultrafast resonant phonon depopulation of the lower radiative levels, suppression of the electrons that escape to the continuum states and selective carrier injection and extraction all together lead to a considerable enhancement in the operating temperature of the structure. All calculations have been done at a temperature of 265 K. Moreover, similar behavior of the output optical powers is another remarkable feature, which makes both wavelengths useful for special applications.     

Multiple-wavelength lasing by multiform self-frequency conversion in Nd<Superscript>3+</Superscript>-doped La<Subscript>2</Subscript>CaB<Subscript>10</Subscript>O<Subscript>19</Subscript> crystals

The self-sum-frequency process was firstly demonstrated in Nd³⁺-doped La₂CaB₁₀O₁₉ (LCB) crystal. In addition, simultaneous participation of the fundamental laser in multi-self-frequency conversion including the self-frequency doubling was reported. Emissions at five different wavelengths (525, 529, 533.6, 1050 and 1069 nm) were simultaneously obtained. The output power of the three green visible lasers (525, 529 and 533.6 nm) generated by multi-self-frequency-conversion of the fundamental laser is up to 26.64 mW, and the light-light conversion efficiency is up to 4.85%. The lasers at 525 and 529 nm are very close to the green primary color G (526.3 nm) defined by the 1964CIERGB system, which has potential applications in laser-based high brightness display. The large frequency differences of 4–6 THz between 525 and 529 nm, 529 and 533.6 nm, as well as 1050 and 1069 nm, are also potential useful in generating THz waves by difference frequency generation (DFG) technique in a nonlinear optical (NLO) crystal.     

Silicon donor and Stokes terahertz lasers

Two types of lasers based on hydrogen-like impurity-related transitions in bulk silicon operate at frequencies between 1 and 7 THz (wavelength range of 50-230 μm). These lasers operate under mid-infrared optical pumping of n-doped silicon crystals at low temperatures (<30 K). Dipole-allowed optical transitions between particular excited states of group-V substitutional donors are utilized in the first type of terahertz silicon lasers. These lasers have a gain ∼1-3 cm⁻¹ above the laser thresholds (>1 kW cm⁻²) and provide 10 ps-1 μs pulses with a few mW output power on discrete lines. Raman-type Stokes stimulated emission in the range 4.6-5.8 THz has been observed from silicon crystals doped by antimony and phosphorus donors when optically excited by radiation from a tunable infrared free electron laser. The scattering occurs on the 1s(E)→1s(A₁) donor electronic transition accompanied by an emission of the intervalley transverse acoustic g-phonon. The Stokes lasing has a peak power of a few tenths of a mW and a pulse width of a few ns. The Raman optical gain is about 7.4 cm GW⁻¹ and the optical threshold intensity is ∼100 kW cm⁻².     

2.9THz束缚态向连续态跃迁量子级联激光器研制

采用气源分子束外延技术生长了GaAs/AlGaAs束缚态向连续 态跃迁的太赫兹量子级联激光器材料, 基于半绝缘等离子体波导工艺制作了太赫兹量子级联激光器. 测量了激光器的发射光谱和功率-电流-电压关系曲线, 研究了器件的激光特性. 器件激射频率约2.95 THz, 脉冲模式下, 最高工作温度为67 K. 连续波模式下, 阈值电流密度最低为230 A/cm², 最大光输出功率1.2 mW, 最高工作温度为30 K. 关键词： 太赫兹 量子级联激光器 分子束外延 波导     

Optically pumped InGaN/GaN MQW lift-off lasers grown on silicon substrates

Chemical etching and removal of the silicon substrate was used for the creation of optically pumped lift-off InGaN/GaN multiple quantum well (MQW) lasers from heterostructures grown on silicon substrate by MOVPE. Luminescence and laser properties of these heterostructures on silicon substrates as well as those of MQWs lifted-off from their substrate by chemical etching were investigated. The lowest value of the lasing threshold of the lift-off lasers at room temperature was about 205 kW/cm² for a laser wavelength of 463 nm and about 360 kW/cm² for a wavelength of 475 nm. It was shown theoretically that the reduction of internal losses, caused by the absence of absorption in the substrate (resulting from its removal) is most significant for the high order modes having lower values of mirror losses and can lead to a 50% reduction of the threshold (or material gain in InGaN necessary to achieve the threshold).     

An Ultra-Broadband Chirality Selective Metastructure Absorber using High Impedance Surface

In this paper, an ultra-wideband chirality selective metastructure absorber is proposed that enables differential absorption and reflection of circularly polarized waves in the terahertz (THz) range. The structure achieves circular dichroism (CD) by using asymmetrically split metal rings as fundamental meta-atoms. Most critically, the high impedance surface and air-resonant cavities are inserted separately in the meta-atoms and dielectric substrate to enhance CD and broaden the bandwidth of absorption. The metastructure absorber can achieve more than 90% absorption of right circularly polarized waves at 0.675–1.244 THz, and it can maintain more than 90% reflection of left circularly polarized waves at 0.607–1.229 THz without changing the direction of rotation. Besides, its CD can reach more than 80% at 0.687–1.213 THz with a relative bandwidth of 55.3%. Spin-selective absorption, which is closely related to breaking chiral symmetry, is investigated through power loss distribution, wide-angle incidence, and scan parameter optimization. The proposed strategy is further validated in the THz band, and the polarization selection and manipulation techniques can be applied to chiral sensing/radio-thermometry, circular polarization detectors/lasers, and molecular spectroscopy.     

Continuous‐wave vertically emitting photonic crystal terahertz laser

Compact semiconductor light sources with high performance continuous‐wave (CW) and single mode operation are highly demanded for many applications in the terahertz (THz) frequency range. Distributed feedback (DFB) and photonic crystal (PhC) quantum cascade (QC) lasers are amongst the leading candidates in this field. Absorbing boundary condition is a commonly used method to control the optical performance of a laser in double‐metal confinement. However, this approach increases the total loss in the device and results in a large threshold current density, limiting the CW maximum output power and operating temperature. In this letter, a robust surface emitting continuous‐wave terahertz QC laser is realized in a two‐dimensional PhC structure by a second order Bragg grating extractor that simultaneously provides the boundary condition necessary for mode selection. This results in a 3.12 THz single mode CW operation with a 3 mW output power and a maximum operation temperature (T_max) of 100 K. Also, a highly collimated far‐field pattern is demonstrated, which is an important step towards real world applications.     

Microcavity THz quantum cascade laser

We report operation of disk and ring shaped terahertz (THz) quantum-cascade lasers (QCLs) emitting in the THz region between 3.0 and 3.4 THz. The GaAs/Al_0.15Ga_0.85As heterostructure is based on longitudinal-optical phonon scattering for depopulation of the lower radiative state. A double metal waveguide is used to confine the whispering gallery modes in the gain medium. The threshold current density is at 5 K. 3D Finite-Difference Time-Domain (FDTD) simulations were performed to obtain the field distributions within a THz QCl resonator at different frequencies.