Amorphization of ice near the melting point

In addition to reflections of the hexagonal phase of ice I _h, the intense diffuse scattering of X-rays mainly due to the amorphization of ice is revealed on the X-ray diffraction patterns of water ice samples prepared at liquid nitrogen (studied by the authors earlier) and samples prepared at T = ?10°C (this work). The measurements are performed in the temperature range from ?25 to 0°C. The existence of reflections of the crystalline phase and intense diffuse scattering on the X-ray diffraction patterns makes it possible make a conclusion about the coexistence of crystalline and amorphous structures of ice. Splitting of the first maximum on the electron-density radial distribution function is detected on the basis of an X-ray diffraction pattern recorded at T = ?3°C. This splitting is explained by an increase in the interatomic distances between the nearest-neighbor atoms located at different levels. Similar splitting was also detected on a radial distribution function constructed using an X-ray diffraction pattern recorded at ?10°C.     

Structural transitions in ice samples at low temperatures and pressures

The structure of ice samples formed in the decay of a water impurity gel at temperatures above 4 K and atmospheric pressure has been examined. The X-ray diffraction analysis indicates that three phases coexist in the initial sample at temperatures of 85–110 K. These phases are amorphous ice occupying up to 30% of the sample volume, cubic-phase ice I _c metastable at low pressures (∼60%), and normal hexagonal ice I _h (≤6%). The characteristic sizes of crystals of the cubic and hexagonal phases are about 6 and 30 nm, respectively. The amorphous phase at annealing above 110 K is gradually transformed to the crystalline phase both cubic and hexagonal. This transition is accompanied by two processes, including a fast increase in the sizes of cubicphase nanocrystals and the partial transition of the cubic phase I _c to the hexagonal one I _h. Hexagonal ice I _h prevails in the bulk of the sample above 200 K.     

Anomalies of the baric and temperature dependences of the elastic characteristics of ice during solid-phase amorphization and the phase transition in the amorphous state

The elastic characteristics of ice up to pressures of 1.7 GPa are determined for the first time at a temperature of 77 K, along with features of their variation associated with the phase transformation of hexagonal ice Ih into high-density amorphous ice hda. The elastic instability of the ice lattice before solid-phase amorphization is experimentally confirmed. Elastic instability during a transition from one amorphous state to another amorphous state was also observed for the first time; this took place when hda ice was warmed at p=0.05 GPa from T=77 K. Zh. éksp. Teor. Fiz. 112, 200–208 (July 1997)     

Phase transformation of Ni/Si thin films induced by nanoindentation and annealing

Thin Ni/Si films are prepared by depositing a Ni layer with a thickness of 100 nm on a Si (100) substrate. The as-deposited thin-film specimens are indented to a maximum depth of 500 nm using a nanoindentation technique and are then annealed at temperatures of 200°C, 300°C, 500°C and 800°C for 2 min. The microstructural changes and phases induced in the various specimens are observed using transmission electron microscopy (TEM) and micro-Raman scattering spectroscopy (RSS). Based on the load-displacement data obtained in the nanoindentation tests, the hardness and Young’s modulus of the as-deposited specimens are found to be 13 GPa and 177 GPa, respectively. The microstructural observations reveal that the nanoindentation process prompts the transformation of the indentation-affected zone of the silicon substrate from a diamond cubic structure to a mixed structure comprising amorphous phase and metastable Si III and Si XII phases. Following annealing at temperatures of 200∼500°C, the indented zone contains either a mixture of amorphous phase and Si III and Si XII phases, or Si III and Si XII phases only, depending on the annealing temperature. In addition, the annealing process prompts the formation of nickel silicide phases at the Ni/Si interface or within the indentation zone. The composition of these phases depends on the annealing temperature. Specifically, Ni₂Si is formed at a temperature of 200°C, NiSi is formed at a temperature of 300°C and 500°C, and NiSi₂ is formed at 800°C.     

Low temperature thermal annealing-induced α-FeSi2 derived phase in an amorphous Si matrix

Thermal annealing-induced recrystallisation in Fe ion-implanted Si was investigated by transmission electron microscopy. Single crystals of Si(111) were implanted with 120 keV Fe ions to a fluence of 1.0×10¹⁷ cm^-2 at cryogenic temperature. A buried amorphous Fe-Si layer in an amorphous Si matrix was formed in the as-implanted sample. Nanobeam electron diffraction revealed that metastable α-FeSi₂ precipitates embedded in the amorphous Si matrix were formed after annealing at 350 °C for 8 h. The formation of this α-FeSi₂-derived phase was unusual, because it has been observed only in epitaxially grown thin films. Based on the Fe_1-xSi (0<x<0.5) phase with the CsCl structure, which is another metastable phase in the Fe-Si binary system, we discuss the formation process of the metastable α-FeSi₂ in the amorphous matrix. PACS 61.43.Dq; 61.14.Lj; 61.80.Jh     

Neutron scattering studies of structural transformations and vibrational spectra of ice after high pressure treatment

Abstract

The transitions of the recovered high-pressure phase ice VIII first to high-density amorphous (hda) and low-density amorphous ices, and finally to cubic Ic, and hexagonal Ih ice were observed at heating using real-time neutron diffraction. Inelastic incoherent neutron scattering measurements on the hdu ice, ice Ih and high-pressure phase ice VI revealed similarity between the amorphous phase and crystalline ice VI and led to the new proposition that hda ice consists of two interpenetrating hydrogen-bounded networks with no hydrogen bonds between “sublattices”.     

Phase transitions in the atomic, electronic, and magnetic subsystems of LaSrMnO films versus the synthesis temperature

The evolution of the cluster structure in amorphous LaSrMnO films as synthesis temperature T _s increases from 20 to 300°C is considered. Two order-disorder phase transitions with different scale parameters are observed. One of them, the aggregation of disordered atoms into small (～20 Å) amorphous clusters at T _s = 100°C, shows up as a sharp increase in the intensity of diffuse X-ray scattering (diffuse halo 1) with a simultaneous suppression of incoherent (background) scattering. At T _s > 150°C, disordering dominates (I _incoh = I _max) until the next stage of ordering sets in at T _s = 250?300°C. At this stage, the crystalline phase forms from large (>100 Å) crystalline clusters. This amorphous-crystalline phase transition is characterized by the appearance of Debye lines and a reduction of the halo intensity. The structural phase transition to long-range order is accompanied by a decrease in the LaSrMnO resistivity from 10¹⁰ to 10 Ω cm and a change from the tunneling mechanism of conductivity involving metallic clusters (which is typical of granulated systems) to the hopping mechanism with a hop variable length following the Mott law ρ ～ exp(T ^?1/4). In the magnetic subsystem, the paramagnetic-ferromagnetic phase transition occurs.     

Superionic transitions in NASICON-type solid electrolytes

Four different methods, temperature dependent X-ray diffraction, impedance measurements, calorimetry and dilatometry, were employed to investigate the superionic transitons of NASICON type materials. Two singularities are found at 160 – 170 °C and about 230 °C. The first one is related to a second order phase transition close to the temperature of structural phase transition; the second one coincides with the inflection in the temperature dependence of conductivity. Paper presented at the 2nd Euroconference on Solid State Ionics, Funchal, Madeira, Portugal, Sept. 10–15, 1995     

Evolution of the spectral response of amorphous europium molybdate under annealing

The phase transformations occurring in amorphous europium molybdate Eu₂(MoO₄)₃ during annealing at atmospheric pressure are studied using optical spectroscopy and x-ray diffractometry. It is established that the metastable β phase is formed at a temperature of ～550°C, whereas the transition to the stable equilibrium α phase takes place at higher temperatures T ≥ 700°C. The spectral characteristics of the α phase, which differ substantially from those of the amorphous state and the β phase, are measured for the first time.     

Influence of a strontium-enriched intergranular cluster network on the electrical conductivity of In2O3-SrO ceramics

A metastable hexagonal R-phase is revealed in polycrystalline In₂O₃-SrO samples, which has the form of a network made up of mesoscopic clusters (60–180 Å in size). The clusters arise from strontium-enriched regions near grain boundaries in the main cubic structure of indium oxide. It is shown that annealing in oxygen at T _a ? 300°C saturates dangling bonds between the R-phase and the matrix and makes the system metastable. This state shows up in the presence of (i) solitary diffuse maxima from the R-phase imposed on Debye lines from the main phase in the X-ray diffraction pattern and (ii) the electron cyclotron resonance (ECR) line with g = 1.875. In addition, the sample in this state acquires a high resistivity (ρ ～ 10⁶ Ω cm). Relaxation at T ? 300°C after annealing at T _a > 300°C disrupts bonds between the strontium-enriched clusters of the R-phase and the indium oxide matrix. This causes spatial separation of the clusters, disruption of their coherent bonds with the matrix structure, and escape of excess oxygen from the sample along grain boundaries. As a result, a new stable state forms, which is characterized by (i) a series of diffuse maxima from the R-phase imposed on lines assigned to the main phase, (ii) the presence of the ECR line with g = 2 with the line with g = 1.875 retained, and (iii) the transition of the sample to a low-resistivity state (ρ ～ 100 Ω cm).     

Order-disorder phase transition in CoPd thin films

The thin films of a CoPd alloy in the equiatomic composition region are prepared by condensation at different substrate temperatures. The substrate temperature is varied from the liquid nitrogen temperature to +280°C. At low substrate temperatures, the crystal structure of the condensed films is the single-crystal blocks of the hexagonal close-packed (hcp) phase. As the substrate temperature is further increased, the domains characterized in the initial state by the microdiffraction patterns in the form of a diffuse halo appear in the films, and these domains have a clear-cut boundary with the regions indicated by point reflections in the electron diffraction patterns. At substrate temperatures from +150 to 160°C, the CoPd alloy films in the equiatomic composition region are fully amorphous. The given state is a polymorphic transformation of the martensitic type. It arises in the martensitic transformation of the low-temperature hcp phase to the high-temperature fcc phase. Original Russian Text ? E.M. Artem’ev, M.E. Artem’ev, 2007, published in Pis’ma v Zhurnal éksperimental’noĭ i Teoreticheskoĭ Fiziki, 2007, Vol. 86, No. 11, pp. 838–840.     

On the yellow-band emission in CdS films

CdS polycrystalline thin films were prepared by the chemical bath deposition (CBD) method on glass substrates. X-ray diffraction (XRD) studies show that the films grow in the cubic zinc-blende crystalline phase. Upon thermal annealing (TA) in Ar+S₂ flux at normal pressure in the temperature range 240–510 °C, the evolution of the transformation into the hexagonal wurtzite phase is observed. This hexagonal crystalline structure is the stable phase. From XRD diagrams the phase transition can be appreciated to occur upon TA at approximately 300 °C. Photoluminescence (PL) data prove that the green-emission band is present for well-defined phases – cubic or hexagonal ones. A second band located at 2.2 eV appears for samples near the transition region. This band at 2.2 eV, called the yellow band, has already been reported to be associated with interstitial Cd atoms. A model for this yellow-band-mechanism formation, arising during the phase transformation, has been proposed based on Frenkel-pair creation. Received: 27 June 2000 / Accepted: 19 December 2000 / Published online: 23 March 2001     

Effect of thermal annealing on r.f. sputtering-deposited nanocrystalline GaN<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>As<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript> thin films

GaNAs thin films were deposited on Corning glass substrates by radio frequency (r.f.) sputtering in molecular nitrogen ambient. The stoichiometry in the GaNAs alloy was controlled by changing the nitrogen incorporation in the film during the growth process, through the variation of the r.f. power in the range 30–80 watts which produced films with N concentrations in the range: x = 0.85–0.90. The structural and optical properties of the GaNAs thin films were studied by X-ray diffraction (XRD), photoacoustic (PA) and photoluminescence (PL) spectroscopies. XRD measurements show a broad diffraction band with a peak close to the (002) diffraction line of the GaN hexagonal phase, and a slight shoulder at the position corresponding to the (111) GaAs cubic phase. The PA absorption spectra showed a remarkable shift to higher energies of the absorption edge as the r.f. power decreases corresponding to the films with higher N concentrations. Thermal annealing of the GaNAs films at temperatures of 450 °C produced a GaAs nanocrystalline phase with grain sizes in the range 10–13 nm, as confirmed by the XRD measurements that showed a well-defined peak in the (111) GaAs direction, and also by the PA spectra which showed an absorption band at energies around 1.45 eV due to the quantum confinement effects. PL spectra of thermal-annealed GaNAs films showed a very intense emission at 1.5 eV which we have associated to transitions between the first electron excited level and acceptor states in the GaAs nanocrystallites.     

Phase transitions in diglyceride monolayers studied by computer simulations,pressure-area isotherms and X-ray diffraction

Summary 1,2-sn-diglyceride monolayers exhibit unique and complex phase transitions as a function of surface pressure. The dynamical response of the layer on expanding the film has been investigated by computer simulations, (π-A) isotherms and grazing-incidence X-ray diffraction. Good agreement is found between the simulations and experiments. The Langmuir film undergoes two phase transitions occurring at 38.3 and 39.8 ?²/molecule. The transition at low surface density is associated with a tilt of ≈14° in the direction close to nearest neighbour. The first transition is unique for the diglyceride molecules and has not been observed for other amphiphilic molecules. It is driven by a competition of hydrophobic/hydrophilic and intra/intermolecular forces and can be pictured as a ?seesaw? mechanism. Due to the close packing of the chains at high surface pressure, thesn-1 ester group aligns with the alkyl chain, and only thesn-2 ester group is favoured to lay at the aqueous interface. Hydrophilic forces attract thesn-1 ester group, but its motion towards the aqueous subphase is hindered by intra- and intermolecular chain interactions. On expansion, the intermolecular interaction decreases, and at the first transition, the intramolecular interaction between the two chains is strong enough to cause a ?swelling? of the molecules. The diffraction pattern determined in the different mesophases reveals that the layer maintains its hexagonal structure up to the second phase. Concomitant with the tilt, the structure relaxed from a hexagonal to a distorted hexagonal lattice. Paper presented at the I International Conference on Scaling Concepts and Complex Fluids, Copanello, Italy, July 4–8, 1994.     

Effect of annealing on the structure of quenched isotactic polypropylene

Smectic isotactic polypropylene films were annealed at different temperatures for different times. Density, wide-angle x-ray scattering (WAXS), differential scanning calorimetry, and the transport properties of methylene chloride vapor were used to follow the transformation of the smectic phase into the monoclinic phase. The results of WAXS diffractograms indicate different saturation levels of crystallization with the maximum order attained progressively more quickly at higher temperatures. Density measurements, however, show that, after a first saturation level, a further increase of this parameter occurs after long annealing times; and this second step is lower, the higher the temperature. Sorption and diffusion, analyzed to investigate the amorphous component, show that annealing the smectic phase at 50°C results in a decrease of amorphous fraction without transformation of the smectic phase. The transition from smectic to monoclinic phase occurs at temperatures higher than 60°C. During the annealing at 80°C there is first a decrease of amorphous fraction corresponding to the first saturation level of the density, and then a further decrease of amorphouse phase corresponding to the final increase of density after 24 hr of annealing.     

Unusual structural phase transition in nanocrystalline zirconia

The present work is the first example demonstrating that a hydrous zirconia formed by precipitation can yield a nearly pure nanocrystalline monoclinic zirconia at a temperature as low as 320 °C. The X-ray diffraction pattern of the hydrous zirconia heated to 310 °C shows that diffraction peaks begin to emerge and reveals a just crystallized mixture of predominantly monoclinic zirconia (70%) with some tetragonal zirconia(30%). In other words, the hydrous zirconia formed in the present work yields the predominantly monoclinic structure coexisting with the tetragonal one as soon as crystallization starts at low temperature (310 °C). This is an important exception to the general principle that amorphous zirconia precursors first convert to the tetragonal structure of zirconia with increasing calcination temperature and then transform to the monoclinic one at a higher temperature (∼600 °C). At the crystallization temperature (310 °C), the monoclinic crystallite size is about 17 nm and the tetragonal one 28 nm. The monoclinic crystallite is much smaller than the tetragonal one with which it co-exists. This result is also not consistent with the traditional view that a critical particle size effect is responsible for the stability of the tetragonal and monoclinic structures. When the temperature (310 °C) is slightly raised to 320 °C, the XRD pattern shows a nearly pure monoclinic zirconia. The crystallite size of the monoclinic zirconia is around 15 nm, and it does not change appreciably as calcination temperature is increased from 320 to or above 400 °C. The unusual structural phase transition has been investigated by several complementary experimental tools: X-raydiffraction and surface analyses, and infrared and Raman spectroscopies. PACS 81.07.-b; 64.70.Nd; 82.80.-d; 78.67.-n; 81.05.Je     

Effect of annealing temperature on K-shell X-ray fluorescence parameters of zinc oxide thin films prepared by the sol-gel method

Zinc oxide thin films were grown on a glass substrate by a sol-gel process using a spin-coating technique. The obtained thin films were annealed between 350?°C and 550?°C in 50?°C steps and were then characterized using X-ray diffraction, scanning electron microscopy, and X-ray fluorescence techniques. The samples were stimulated by 59.5?keV gamma rays emitted from an Americium-241 annular radioisotope source. K X-rays emitted by samples were counted using an ultra-low energy germanium detector with a resolution of 150?eV at 5.96?keV. It was found that there was generally a decrease in both the Kβ/Kα X-ray intensity ratios and the K X-ray fluorescence cross sections for zinc oxide between 350?°C and 500?°C, but not at 550?°C. In addition, the X-ray diffraction patterns of the films showed that the transition phase from an amorphous to a polycrystalline hexagonal wurtzite structure was complete at an annealing temperature of 500?°C. The results show that variations in these parameters can be explained by the reorganization of atoms and the charge transfer process due to the effect of the annealing temperature on the elements forming the compounds.     

ZnO films grown by successive chemical solution deposition

ZnO films were grown from 0.1-M zincate solutions on stainless-steel and aluminosilicate glass substrates by the successive chemical solution deposition method. The structure, morphology, composition, and optical emission properties of the films were studied by X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, and photoluminescence techniques. Results revealed that the as-grown film contains a substantial amount of amorphous zinc hydroxide (15–25%), at least on its surface. This can be reduced to 7% by annealing the film in argon (350 °C, 1 h). Despite the presence of the hydroxide phase, the films hexagonal lattice constants match the standard values. The films surface texture and the grains shape and preferential orientation depend on the type of the substrate and its surface conditioning. The UV photoluminescence emission from as-grown films at 3.22±0.04 eV (380–390 nm) and its suppression due to the effect of chlorine are addressed. PACS 81.16.Be; 81.05.Dz; 78.55.Et; 79.60.-i; 68.55.Jk     

Spinodal ordering in Cu3Au

Results from, X-ray diffuse scattering and inelastic neutron scattering demonstrate the presence of long-lived fluctuations in order up to 5.0°C above the first-order phase transition, T_c = 383.2°C. The temperature for continuous ordering has been determined to be 358.2°C. The coherent phase boundary is 3–13°C below T_c.     

Die mechanische Dämpfung in Eis-Einkristallen

The attenuation of multiply reflected acoustic pulses has been measured in ice single crystals for longitudinal and transversal waves. The frequency range extended from 5 to 200 Mc/s, the temperature from the melting point to ?120 °C. The attenuation in the range mentioned above is caused by scattering at microcrystalline units in the hexagonal ice.