Room-temperature polariton parametric scattering driven by a one-dimensional polariton condensate

We demonstrate a novel way to realize room-temperature polariton parametric scattering in a one-dimensional ZnO microcavity. The polariton parametric scattering is driven by a polariton condensate, with a balanced polariton pair generated at the adjacent polariton mode. This parametric scattering is experimentally investigated by the angle-resolved photoluminescence spectroscopy technique under different pump powers and it is well described by the rate equation of interacting bosons. The direct relation between the intensity of the scattered polariton signal and that of the polariton reservoir is acquired under nonresonant excitation, exhibiting the explicit nonlinear characteristic of this room-temperature polariton parametric process.     

Exciton warming in III–V semiconductors and microcavities

We present a time resolved experiment in which we dynamically tailor the occupation and temperature of a photogenerated exciton distribution in QWs by excitation with two delayed picosecond pulses. The modification of the excitonic distribution results in ultrafast changes in the PL dynamics. Our experimental results are well accounted by a quasiequilibrium thermodynamical model, which includes the occupation and momentum distribution of the excitons. We use this model and the two-pulse experimental technique to study the polariton dynamics in InGaAs-based microcavities in the strong coupling regime. In particular, we demonstrate that resonantly injected upper polaritons mainly relax to the lower polariton branch via scattering to large momentum polariton states, producing the warming of the polariton reservoir.     

极化激元(polaritons)与拉曼散射

在给出介质中的光（电磁）波与极化波混合作用而得出的极化激元方程。极化激元色散方程之后又讨论了相应的物理意义及相关的物理问题；获得极化激元的实验方法。接着还介绍和讨论了极化激元的拉曼散射。     

Energy relaxation of excitonlike polaritons in semiconductor microcavities: Effect on the parametric scattering of polaritons

Polariton emission in GaAs-based microcavities has been studied under variable conditions, which made it possible to excite (a) polaritons from the upper polariton branch and hot free polaritons and electrons, (b) polaritons from the lower polariton branch (LPB) and localized excitons, and (c) the mixed system. Variation of the excitation conditions leads to substantial differences in the energy distributions of polaritons and in the temperature dependences of polariton emission. It is established that the energy relaxation of resonantly excited LPB polaritons via polariton and localized exciton states at liquid helium temperatures is ineffective. Instead, the relaxation bottleneck effect is suppressed with increasing temperature by means of exciton delocalization (due to thermal excitation by phonons). The most effective mechanism of relaxation to the LPB bottom is via scattering of delocalized excitons on hot free carriers. It is found that the slow energy relaxation of polaritons excited below the free exciton energy can be significantly accelerated at low temperatures by means of additional weak generation of hot excitons and, especially, hot electrons. This acceleration of the energy relaxation of polaritons by means of additional overbarrier photoexcitation sharply decreases the barrier for stimulated parametric scattering of polaritons excited at an LPB inflection point. Therefore, additional illumination can be used to control the polariton-polariton scattering.     

Polariton luminescence in high-purity layers of AlGaAs solid solutions

An additional polariton emission line caused by a change in the polariton energy distribution function owing to the exciton-exciton scattering is observed experimentally. The energy shift of this line and the variation in its intensity with increasing excitation power agree well with the results of calculations performed in the framework of the theoretical model proposed by Bisti [Fiz. Tverd. Tela 18, 1056 (1976)].     

“Thermal barrier” effect in energy relaxation of polaritons in HgI2

The paper presents the results of measurements of polariton radiation spectra, polariton band excitation spectra and spectra of resonance Raman scattering HgI₂. These are registered at different temperatures and units of energetic derangement between the exciting radiation quantum energy and that of transverse exciton. The threshold value of the temperature (T=12 K) starting from which there is attained the equilibrium between the polariton and phonon subsystems is found. The scattering mechanism that guides the formation of “thermal barrier” favouring the polaritons thermalization, is revealed.     

Excitation and detection of surface-plasmon polariton waves on Cu(111) with gratings of rare gas monolayers

We excited surface-plasmon polariton waves (SPPWs) on Cu(111) by coupling optical beams with adsorbed xenon gratings. The SPPWs's excitation causes a resonancelike dip in the angle-resolved reflectivity difference measurement. From the resonance we determined optical constants epsilonCu(633 nm)=-9.53+i0.142 and epsilonCu(780 nm)=-13.44+i0.18. The grating-coupled SPPWs can be used to study mass transport on thin films.     

Motion of spin polariton bullets in semiconductor microcavities

The dynamics of optical switching in semiconductor microcavities in the strong coupling regime is studied by using time- and spatially resolved spectroscopy. The switching is triggered by polarized short pulses which create spin bullets of high polariton density. The spin packets travel with speeds of the order of 10(6) m/s due to the ballistic propagation and drift of exciton polaritons from high to low density areas. The speed is controlled by the angle of incidence of the excitation beams, which changes the polariton group velocity.     

Dynamics of polaritons resonantly created at the upper polariton branch

We have studied the polariton relaxation dynamics in a CdTe microcavity at low temperatures after resonant excitation into the upper polariton branch (UPB). Initially, we have set a negative exciton–cavity detuning, such that the energy difference between the two polariton branches coincides with that of an LO phonon. Our experimental results reveal a sublinear dependence of the integrated emission from the lower polariton branch (LPB) with excitation power. This evidences not only an inefficient LO phonon mediated relaxation from the UPB to the LPB but also a substantial inhibition of polariton relaxation along the LPB. After that, we have progressively reduced the negative detuning, approaching the exciton–cavity resonance. Under these conditions it is possible to observe a nonlinear emission arising from K0 LPB-states similar to that observed after nonresonant excitation. Marked oscillations are present in the time evolution traces, with a period that does not depend on excitation power or detuning.     

Stimulated secondary emission from semiconductor microcavities.

We find strong influence of final-state stimulation on the time-resolved light emission dynamics from semiconductor microcavities after pulsed excitation allowing angle-resonant polariton-polariton scattering on the lower-polariton branch. The polariton dynamics can be controlled by injection of final-state polaritons at densities below a polariton saturation density of 5x10(8) cm(-2). A bosonic enhancement factor in the dynamics of up to 700 is evaluated.     

Linear and non-linear behavior of cavity polaritons

We report on the linear and non-linear emission of cavity-polaritons under resonant excitation. At low excitation density, in addition to polariton photoluminescence, strong Rayleigh scattering is observed. At higher excitation densities, a sudden transition to a highly emissive state is observed, accompanied by spatial patterning. We attribute such phenomena to a combination of nonlinear cavity-polariton relaxation mechanism and nonlinear response of the cavity, leading to transverse pattern formation. A careful analysis of near- and far-field emission patterns with spatial filtering as well as reflectivity shows that an inhomogeneous situation develops, the center of the excited region undergoing a strong to weak coupling transition while the periphery is still in strong coupling. Despite the complex non-linear behavior we observe no signatures of Bose–Einstein condensation or Boser action.     

Stimulated parametric scattering of excitonic polaritons in planar GaAs microcavities: Distinctive feature of QW electric field

Instabilities in the electric field at the QW in the active region of a GaAs based microcavity have been investigated under the resonance excitation near the inflection point of the low polariton (LP) dispersion curve with the use of four wave mixing technique. The electric field jump due to an LP bistability has been found to precede the development of a stimulated parametric scattering of LPs. The latter has been found to develop with a delay of a few hundreds ps from the beginning of the excitation pulse. These results are in qualitative agreement with hard regime of excitation of the stimulated parametric LP scattering predicted recently.     

Continuous wave observation of massive polariton redistribution by stimulated scattering in semiconductor microcavities

A massive redistribution of the polariton occupancy to two specific wave vectors, zero and approximately 3.9x10(4) cm(-1), is observed under conditions of continuous wave excitation of a semiconductor microcavity. The "condensation" of the polaritons to the two specific states arises from stimulated scattering at final state occupancies of order unity. The stimulation phenomena, arising due to the bosonic character of the polariton quasiparticles, occur for conditions of resonant excitation of the lower polariton branch. High energy nonresonant excitation, as in most previous work, instead leads to conventional lasing in the vertical cavity structure.     

Excitonic polariton dispersion in CuBr determined by resonant Raman scattering under two-photon excitation of excitonic molecules

The excitonic polariton dispersion in wide k-space for k∥[111] is measured through the two-photon-resonant Raman scattering with the use of the double beam excitation technique. The k-linear effect, the heavy and light masses and the polariton effect of the Z_1,2 exciton are clarified.     

Polariton parametric amplifier pump dynamics in the coherent regime

We studied the pump coherent dynamics in a II-VI microcavity parametric amplifier, using angle-resolved four-wave mixing. The polariton parametric amplification is found to result in a strong quenching and saturation of the pump coherence lifetime above the threshold. For the polariton scattering processes that remain below the amplification threshold, we find an angle-dependent collision broadening associated with the efficiency of the polariton scattering towards the excitonic reservoir.     

On the development time of the parametric instability of polariton-polariton scattering in a planar semiconductor microcavity

It has been shown that the development of the threshold instability of polariton-polariton scattering in a planar semiconductor microcavity under the coherent pulsed excitation above the lower polariton branch requires a minimum pulse length on the order of dozens of picoseconds, needed for the population of polariton modes in the regions of the parametric instability to increase from the noise level to a certain value comparable with the population of the driven mode.     

Probing microcavity polariton superfluidity through resonant Rayleigh scattering

We study the motion of a polariton fluid injected into a planar microcavity by a continuous wave laser. In the presence of static defects, the spectrum of the Bogoliubov-like excitations reflects onto the shape and intensity of the resonant Rayleigh scattering emission pattern in both momentum and real space. We find a superfluid regime in which the Rayleigh scattering ring in momentum space collapses as well as its normalized intensity. We show how collective excitation spectra having no analog in equilibrium systems can be observed by tuning the excitation angle and frequency.     

基于耦合场量子受激拉曼散射的太赫兹波辐射

使用两块长度各为65 mm的MgO:LiNbO3和无掺杂LiNbO3晶体,以1064nm的Q开关Nd:YAG激光器作为抽运光源,在12 mJ/pulse的抽运光能量下得到频率范围为0.34～2.90 THz的电磁辐射.分析表明,激光入射使LiNbO3晶体中具有电磁特性的横光学声子可以和入射光子形成耦合场量子.作为一种电磁特性的元激发,LINbO3晶体的耦合场量子的辐射场频率覆盖部分太赫兹频段范围,并可通过耦合场量子受激拉曼散射过程辐射THz波.根据耦合场量子辐射理论,通过分析晶体的耦合场量子色散特性曲线,可以确定该晶体能否辐射THz波及其带宽范围.     

Dispersion and damping of a surface plasmon polariton on a one-dimensional randomly rough metal surface

Abstract

By the use of the reduced Rayleigh equation for the amplitude of a surface plasmon polariton on a one-dimensional randomly rough metal surface that is in contact with vacuum, we calculate the dispersion and damping of the surface electromagnetic wave to the lowest nonzero order in the rms height of the surface. It is found that the frequency of the surface plasmon polariton is depressed by the surface roughness. The attenuation of the surface plasmon polariton in the long wavelength limit is due primarily to its scattering into other surface plasmon polaritons, while in the short wavelength limit it is due primarily to its roughness-induced scattering into volume electromagnetic waves in the vacuum. The energy mean free path of the surface plasmon polariton is shorter on a randomly rough metal surface than it is on a lossy planar metal surface, and the surface plasmon polariton is more tightly bound to a rough surface than to a planar one.