Synthesis of molybdenum silicide by both ion implantation and ion beam assisted deposition

Two groups of Mo/Si films were deposited on surface of Si(1 0 0) crystal. The first group of the samples was prepared by both ion beam assisted deposition (IBAD) and metal vapor vacuum arc (MEVVA) ion implantation technologies under temperatures from 200 to 400 °C. The deposited species of IBAD were Mo and Si, and different sputtering Ar ion densities were selected. The mixed Mo/Si films were implanted by Mo ion with energy of 94 keV, and fluence of Mo ion was 5 × 10¹⁶ ions/cm². The second group of the samples was prepared only by IBAD under the same test temperature range. The Mo/Si samples were analyzed by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), sheet resistance, nanohardness, and modulus of the Mo/Si films were also measured. For the Mo/Si films implanted with Mo ion, XRD results indicate that phase of the Mo/Si films prepared at 400 and 300 °C was pure MoSi₂. Sheet resistance of the Mo/Si films implanted with Mo ion was less than that of the Mo/Si films prepared without ion implantation. Nanohardness and modulus of the Mo/Si films were obviously affected by test parameters.     

Influence of Ni deposition and subsequent N ion implantation at different substrate temperatures on nano-structure and corrosion behaviour of type 316 and 304 stainless steels

Ni thin films of 250 nm thicknesses were coated on type 304 and 316 stainless steels and post N⁺ ion implanted at 15 keV energy with a fluence of 5 × 10¹⁷ N⁺ cm⁻² at different substrate temperatures. Surface nano-structure of the samples were analysed using X-ray diffraction (XRD), atomic force microscopy (AFM) before corrosion test and scanning electron microscopy (SEM) after corrosion test. Corrosion behaviour of the samples in 1.0 M H₂SO₄ solution was investigated by means of potentiodynamic technique. Nano-structure and crystallography of the films showed the development of Ni₃N(1 1 1) and Ni₄N(2 0 0) orientations with a minimum surface roughness and grain size at 400 K substrate temperature. The highest corrosion resistance with a corrosion current of 0.01 μA cm⁻² (for SS(316)) and 0.56 μA cm⁻² (for SS(304)) was achieved in case of samples which were N⁺ ion implanted at 400 K. Results for both types of stainless steels showed good agreement and the better performance of SS(316) was attributed to the 2% molybdenum contents in the alloy composition of this type of stainless steel, which enhances the effectiveness of nitrogen in retarding the corrosion process.     

Morphological and optical properties of silicon thin films by PLD

Silicon thin films have been prepared on sapphire substrates by pulsed laser deposition (PLD) technique. The films were deposited in vacuum from a silicon target at a base pressure of 10⁻⁶ mbar in the temperature range from 400 to 800 °C. A Q-switched Nd:YAG laser (1064 nm, 5 ns duration, 10 Hz) at a constant energy density of 2 J × cm⁻² has been used. The influence of the substrate temperature on the structural, morphological and optical properties of the Si thin films was investigated.Spectral ellipsometry and atomic force microscopy (AFM) were used to study the thickness and the surface roughness of the deposited films. Surface roughness values measured by AFM and ellipsometry show the same tendency of increasing roughness with increased deposition temperature.     

Synthesis, characterization, and microwave absorption properties of Fe-40 wt%Ni alloy prepared by mechanical alloying and annealing

Fe-40 wt%Ni alloys with granular shape and flake shape were prepared by a mechanical alloying (MA) and annealing method. The phase composition and morphology of the FeNi alloys, electromagnetic parameters, and microwave absorbing properties of the silicone rubber composite absorbers filled with the as-prepared FeNi alloy particles were characterized using X-ray diffraction (XRD), scanning electron microscope (SEM) and vector network analyzer. The XRD results indicate that the crystalline structures of the Fe-40 wt%Ni alloys prepared by both one-step and two-step MA processes are face-centered cubic (fcc) Ni (Fe) solid solutions, and the structures can be retained after annealing at 600 °C for 2 h. SEM images show that the FeNi alloy powders for one-step process have a granular shape; however the particles turned into flake form when they were sequentially milled with absolute ethyl alcohol. With the increase in thickness of composite absorber, the reflection loss (RL) decreases, and the peak for minimum reflection loss shifts towards the lower frequency range. Compared to the absorbers filled with the granular FeNi alloy, the absorbers filled with flaky FeNi alloys possess higher complex permittivities and permeabilities and have a lower RL and peak frequency under the same thickness. Microwave absorbing materials with a low reflection loss peak in the range of 1-4 GHz are obtained, and their microwave absorbing properties can be adjustable by changing their thicknesses.     

Field emission properties of carbon nanotubes film grown on NiCr alloy films

Carbon nanotubes (CNTs) are prepared on NiCr alloy films by low pressure thermal chemical vapor deposition at 600 °C. NiCr alloy films are deposited by magnetic co-sputtering method, and the various thickness and Ni/NiCr ratios are controlled by sputtering power. The diameter and length of CNTs, as well as the roughness of the CNTs films, mainly depend on the Ni/NiCr ratio. The field emission current density of the CNTs film increases with the increasing Ni/NiCr ratio from 65 wt% to 83 wt%, and decreases when the Ni/NiCr ratio is more than 87 wt% in the alloy film.     

Double-beta decay Q values of Cd and Te

The Q values of the ¹¹⁶Cd and ¹³⁰Te double-beta decaying nuclei were determined by using a Penning trap mass spectrometer. The new atomic mass difference between ¹¹⁶Cd and ¹¹⁶Sn of 2813.50(13) keV differs by 4.5 keV and is 30 times more precise than the previous value of 2809(4) keV. The new value for ¹³⁰Te, 2526.97(23) keV is close to the Canadian Penning trap value of 2527.01 ± 0.32 keV (Scielzo et al., 2009) [1], but differs from the Florida State University trap value of 2527.518 ± 0.013 keV (Redshaw et al., 2009) [2] by 0.55 keV (2σ). These values are sufficiently precise for ongoing neutrinoless double-beta decay searches in ¹¹⁶Cd and ¹³⁰Te. Hence, our Q values were used to compute accurate phase-space integrals for these double-beta decay nuclei. In addition, experimental two-neutrino double-beta decay nuclear matrix elements were determined and compared with the theoretical values. The neutrinoless double-beta decay half-lives for these nuclei were estimated using our precise phase-space integrals and considering the range of the best available matrix elements values.     

Determination of effective atomic numbers and effective electron densities for Cu/Zn alloy

The mass attenuation coefficients, total interaction cross-sections, effective atomic numbers, effective electron densities and photon mean free paths of the Cu/Zn alloy were determined on the basis of the mixture rule at 356, 511, 662, 835 and 1275 keV gamma-ray energies. The gamma-rays were detected by using an ordinary NaI(Tl) scintillation detection system with a resolution of 10.2% at 662 keV.It was observed that the mixture rule is a suitable method for determination of these parameters. The effective atomic numbers and effective electron densities tend to be almost constant as a function of energy. There is good agreement between experiment and theory, calculated by WinXCom.     

Processing for optically active erbium in silicon by film co-deposition and ion-beam mixing

Techniques of film deposition by co-evaporation, ion-beam assisted mixing, oxygen ion implantation, and thermal annealing were been combined in a novel way to study processing of erbium-in-silicon thin-film materials for optoelectronics applications. Structures with erbium concentrations above atomic solubility in silicon and below that of silicide compounds were prepared by vacuum co-evaporation from two elemental sources to deposit 200-270 nm films on crystalline silicon substrates. Ar⁺ ions were implanted at 300 keV. Oxygen was incorporated by O⁺-ion implantation at 130 keV. Samples were annealed at 600 °C in vacuum. Concentration profiles of the constituent elements were obtained by Rutherford backscattering spectrometry. Results show that diffusion induced by ion-beam mixing and activated by thermal annealing depends on the deposited Si-Er profile and reaction with implanted oxygen. Room temperature photoluminescence spectra show Er³⁺ transitions in a 1480-1550 nm band and integrated intensities that increase with the oxygen-to-erbium ratio.     

Metallic thin film depth measurements by X-ray microanalysis

In this study, a low-cost technique, energy dispersive spectroscopy (EDS), was used to explore the application of X-ray microanalysis in depth determination of metallic films. Al, Ni and Au films with varied thicknesses from 50 to 400 nm were deposited on silicon (Si) substrates by magnetron sputtering. Electron beam energies ranging from 4 to 30 keV were applied while other parameters were kept constant to determine the electron beam energy required to penetrate the films. The effect of the atomic number of the metallic films on the penetration capability of the electron beam was investigated. Based on the experimental results, mathematical models for Al, Ni and Au films were established and the interaction volume was simulated using a Monte Carlo program. The simulations are in good agreement with the experimental results. Al/Ni/Au multilayers were also studied.     

Growth and alloy formation of ultrathin Ni films on Co/Pt(1 1 1)

Low-energy electron diffraction (LEED) and Auger electron spectroscopy (AES) were used to study the growth and the structural evolution of Ni/Co/Pt(1 1 1) following high-temperature annealing. From the oscillation of the specular beam of the LEED and Auger uptake curve, we concluded that the growth mode of thin Ni films on 1 ML Co/Pt(1 1 1) is at least 2 ML layer-by-layer growth before three-dimensional island growth begins. The alloy formation of Ni/1 ML Co/Pt(1 1 1) was analyzed by AES. The temperature for the intermixing of Ni and Co layers in the upper interface without diffusing into the bulk of Pt is independent of the thickness of Ni when a Co buffer is one atomic monolayer. After the temperature was increased, formations of Ni-Co-Pt alloy, Ni-Pt alloy and Co-Pt alloy were observed. The temperature required for the Ni-Co intermixing layer to diffuse into Pt bulk increases with the thickness of Ni. The interlayer distance as a function of annealing temperature for 1 ML Ni/1 ML Co/Pt(1 1 1) was calculated from the I-V LEED. The evolution of LEED patterns was also observed at different annealing temperatures.     

Preparation of anti-corrosion films by microarc oxidation on an Al-Si alloy

Thick ceramic films over 140 μm were prepared on Al-7% Si alloy by ac microarc oxidation in a silicate electrolyte. The film growth kinetics was determined by an eddy current technique and film growth features in different stages were discussed. The microstructure and composition profiles for different thick films were analyzed by scanning electron microscopy and energy dispersive X-ray spectroscopy. Their phase components were determined by X-ray diffraction. The electrochemical corrosion behaviors of bare and coated alloys were evaluated using potentiodynamic polarization curves, and their corrosion morphologies were observed. In the initial stage of oxidation, the growth rate is slow with 0.48 μm/min due to the effect of Si element though the current density is rather high up to 33 A/dm². After the current density has decreased to a stable value of 11 A/dm², the film mainly grows towards the interior of alloy. The film with a three-layer structure consists of mullite, γ-Al₂O₃, α-Al₂O₃ and amorphous phases. By microarc discharge treatment, the corrosion current of the Al-Si alloy in NaCl solution was significantly reduced. However, a thicker film has to be fabricated in order to obtain high corrosion-resistant film of the Al-Si alloy. Microarc oxidation is an effective method to form an anti-corrosion protective film on Si-containing aluminum alloys.     

Laser surface alloying of Ni-plated steel with CO2 laser

Laser surface alloying of low carbon steel electroplated with thin (10 μm) Ni using an 850 W CW CO₂ laser is reported for the first time. Fe-Ni binary alloys of different concentrations are formed by varying laser traverse speed from 0.5 to 5 m/min. The phase transformation from α to α + γ is discussed as a function of Ni contents. Development of microstructure in the modified zone is analysed in terms of solidification rate and Ni concentration. A three-fold increase in the microhardness of the binary alloy is observed. Formation of homogenous, adherent and crack free surface alloys is reported.     

rf reactive co-sputtered Au-Ag alloy nanoparticles in SiO2 thin films

We have studied formation of Au-Ag alloy nanoparticles in sputtered SiO₂ thin films. Silica thin films containing Au-Ag nanoparticles were deposited on quartz substrates using rf reactive magnetron co-sputtering technique. The films heat-treated in reducing Ar + H₂ atmosphere at different temperatures. They were analyzed by using UV-vis spectrophotometry, atomic force microscopy and X-ray photoelectron spectroscopy (XPS) methods for their optical, surface morphological as well as structural and chemical properties. The optical absorption of the Au-Ag alloy nanoparticles illustrated one plasmon resonance absorption peak located at 450 nm between the absorption bands of pure Au and Ag nanoparticles at 400 and 520 nm, respectively, for the thin films annealed at 800 °C. XPS results showed that the alloys were in metallic state, and they had a greater tendency to lose electrons as compared to their corresponding monometallic state. Using lateral force microscopy analysis, we have found that the alloy particles were uniformly distributed on the surface with grain size of about 20 nm.     

Ab-initio investigation of Ni(Fe)/ZrO2(0 0 1) and Ni-Fe/ZrO2(0 0 1) interfaces

The atomic and electronic structures of Me/ZrO₂(0 0 1) interfaces, where Me is Ni, Fe or a Ni-Fe alloy, are investigated by the plane wave pseudopotential method within density-functional theory. The work of separation of metal films from oxide substrate for the O- and Zr-terminated Me/ZrO₂(0 0 1) interfaces is calculated. High adhesion at both Me/(ZrO₂)_O and Me/(ZrO₂)_Zr interfaces is found. The effect of oxygen vacancies on the adhesion at the metal-ceramic interfaces is also investigated. It is shown that Ni(Fe)-O interaction at the O-terminated interface weakens in the presence of interfacial oxygen vacancies. At interfaces with Ni-Fe alloys the adhesion depends strongly on the composition of the interfacial layers and their magnetic properties.     

Alloy formation of Co/Ni/Pt(1 1 1)

The initial growth and alloy formation of ultrathin Co films deposited on 1 ML Ni/Pt(1 1 1) were investigated by Auger electron spectroscopy (AES), low energy electron diffraction (LEED), and ultraviolet photoelectron spectroscopy (UPS). A sequence of samples of d_Co Co/1 ML Ni/Pt(1 1 1) (d_Co = 1, 2, and 3 ML) were prepared at room temperature, and then heated up to investigate the diffusion process. The Co and Ni atoms intermix at lower annealing temperature, and Co-Ni intermixing layer diffuses into the Pt substrate to form Ni-Co-Pt alloys at higher annealing temperature. The diffusion temperatures are Co coverage dependent. The evolution of UPS with annealing temperatures also shows the formation of surface alloys. Some interesting LEED patterns of 1 ML Co/1 ML Ni/Pt(1 1 1) show the formation of ordered alloys at different annealing temperature ranges. Further studies in the Curie temperature and concentration analysis, show that the ordered alloys corresponding to different LEED patterns are Ni_xCo_1−xPt and Ni_xCo_1−xPt₃. The relationship between the interface structure and magnetic properties was investigated.     

Reactively sputtered Ni, Ni(N) and Ni3N films: Structural, electrical and magnetic properties

Nickel thin films were deposited on glass substrates at different N₂ gas contents using a dc triode sputtering deposition system. Triode configuration was used to deposit nanostructured thin films with preferred orientation at lower gas pressure and at lower substrate temperature compared to the dc diode sputtering system. A gradual evolution in the composition of the films from Ni, Ni(N), to Ni₃N was found by X-ray diffraction analysis. The preferred growth orientation of the nanostructured Ni films changed from (1 1 1) to (1 0 0) for 9% N₂ at 100 °C. Ni₃N films were formed at 23% N₂ with a particle size of about 65 nm, while for 0% and 9% of nitrogen, the particles sizes were 60 nm, and 37 nm, respectively, as obtained by atomic force microscopy. Magnetic force microscopy imaging showed that the local magnetic structure changed from disordered stripe domains of about 200 nm for Ni and Ni(N) to a structure without a magnetic contrast, indicating the paramagnetic state of this material, which confirmed the structural transformation from Ni to Ni₃N.     

The microstructure, mechanical and friction properties of protective diamond like carbon films on magnesium alloy

Protective hard coatings deposited on magnesium alloys are believed to be effective for overcoming their poor wear properties. In this work, diamond-like carbon (DLC) films as hard protective films were deposited on AZ91 magnesium alloy by arc ion plating under negative pulse bias voltages ranging from 0 to −200 V. The microstructure, composition and mechanical properties of the DLC films were analyzed by scanning electron microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy and nanoindentation. The tribological behavior of uncoated and coated AZ91 magnesium alloy was investigated using a ball-on-disk tribotester. The results show that the negative pulse bias voltage used for film deposition has a significant effect on the sp³ carbon content and mechanical properties of the deposited DLC films. A maximum sp³ content of 33.3% was obtained at −100 V, resulting in a high hardness of 28.6 GPa and elastic modulus of 300.0 GPa. The DLC films showed very good adhesion to the AZ91 magnesium alloy with no observable cracks and delamination even during friction testing. Compared with the uncoated AZ91 magnesium alloy, the magnesium alloy coated with DLC films exhibits a low friction coefficient and a narrow, shallow wear track. The wear resistance and surface hardness of AZ91 magnesium alloy can be significantly improved by coating a layer of DLC protective film due to its high hardness and low friction coefficient.     

Ni-P alloy-carbon black composite films fabricated by electrodeposition

Ni-P alloy-carbon black (CB) composite films were fabricated by electroplating and their microstructures and properties were examined. The CB and phosphorus contents of the composite films were also investigated. The CB particles were found to be embedded in the Ni-P alloy matrix. The CB content in the deposits increased, reached a maximum value of 0.77 mass% with increasing CB concentration in the bath up to 10 g dm⁻³, and then decreased with a further increase in the CB concentration in the bath. Both before and after heat treatment, the composite films had higher hardnesses and lower friction coefficients than the Ni-P alloy films. Both before and after heat treatment, the friction coefficient of 0.77 mass% CB composite films was about half that of Ni-P alloy films without CB.     

Synthesis of amorphous boron carbide by single and multiple charged boron ions bombardment of fullerene thin films

In this paper, results of structural modification of fullerene thin films by single and multiple charged boron ions (B⁺, B³⁺) are presented. The applied ion energies were in the range of 15-45 keV. The characterization of as-deposited and irradiated specimens has been performed by atomic force microscopy, Raman and Fourier transform infrared spectroscopy and UV/vis spectrophotometry. The results of Raman analysis have shown the formation of amorphous layer after irradiation of fullerene thin films. Fourier transform infrared spectroscopy has confirmed the formation of new B-C bonds in irradiated films at higher fluences (2 × 10¹⁶ cm⁻²). The morphology of bombarded films has been changed significantly. The optical band gap was found to be reduced from 1.7 to 1.06 eV for irradiated films by B³⁺ ions and 0.7 eV for irradiated films by B⁺ ions.     

Synthesis and characterization of Ni-doped ZnO: A transparent magnetic semiconductor

We report synthesis of a transparent magnetic semiconductor by incorporating Ni in zinc oxide (ZnO) matrix. ZnO and nickel-doped zinc oxide (ZnO:Ni) thin films (∼60 nm) are prepared by fast atom beam (FAB) sputtering. Both undoped and doped films show the presence of ZnO phase only. The Ni concentration (in at%) as determined by energy dispersive X-ray (EDX) technique is ∼12±2%. Magnetisation measurement using a SQUID magnetometer shows that the Ni-doped films are ferromagnetic, having coercivity (H_c) values 192, 310 and 100 Oe and saturation magnetization (M_s) values of 6.22, 5.32 and 4.73 emu/g at 5, 15 and 300 K, respectively. The Ni-doped film is transparent (>80%) across visible wavelength range. Resistivity of the ZnO:Ni film is ∼2.5×10⁻³ Ω cm, which is almost two orders of magnitude lower than the resistivity (∼4.5×10⁻¹ Ω cm) of its undoped counterpart. Impurity d-band splitting is considered to be the cause of increase in conductivity. Interaction between free charges generated by doping and localized d spins of Ni is discussed as the reason for ferromagnetism in the ZnO:Ni film.