On photoluminescence in HgGa2S4

In this paper, we investigate the kinetics of photoluminescence in excited crystals of HgGa₂S₄ which have recently been proposed for implementing tunable luminescent devices. From photoluminescence experiments, performed at various temperatures and excitation powers, it appears that two kinds of radiative recombination processes take place during crystal excitation. These originate two bands in emission spectra which were resolved by means of a fitting procedure. The dependencies of these bands on temperature and excitation power density are explained by means of a specific kinetic model. A broad band, peaking at about 1.8 eV, is ascribed to electron-hole tunnel recombinations occurring in associated donor-acceptor pairs, according to a Prener-Williams scheme. The second narrow band, peaking at about 2.3 eV, is ascribed to electron-hole recombinations occurring in centres presenting short () and long-life () excited states. At room temperature, owing to thermally activated relaxation from short- to long-life states, these centres saturate under relatively low excitation powers. The tunability of photoluminescence is a consequence of competition between monomolecular and bimolecular recombination processes.     

Dependence of photoluminescence from a-Si nanoparticles on the annealing time and exciting wavelength

Thin films of SiO_x having thickness of 0.2 μm and oxygen content x=1.5 or 1.7 are prepared by thermal evaporation of SiO in vacuum. Then some samples are furnace annealed for various times (in the range ) at 770 and 970 K and some others are rapid thermal annealed at 970 K for 30 and 60 s. Photoluminescence (PL) measurements are carried out at room temperature using the 442 nm line of a He-Cd laser and the 488 nm of an Ar laser for excitation. The effect of the annealing conditions and wavelength of the exciting light on the shape of the PL from these films is explored. The deconvolution of the PL spectra measured with the 442 nm line from samples annealed at 770 K for reveals two distinct PL bands peaked at around 2.3 and 2.5 eV, which do not shift appreciably with increasing annealing time. In addition, at longer annealing times, a weak third band is resolved centred in the range 2.0-2.1 eV. It exists in the spectra of all samples annealed at 970 K being more prominent in the samples with x=1.5. The intensity of this band shows different dependences on the annealing time in the films with different initial composition. The results obtained are discussed in terms of radiative recombination via defect states in the SiO_x matrix (the 2.5 eV band) or at the a-Si-SiO_x interface (the 2.3 eV band). The band centred in the 2.0-2.1 eV range is related to recombination in amorphous silicon nanoparticles grown upon annealing.     

Surface defect states of CdTexS1 − x quantum dots

Properties of surface defect states of CdTe_xS_1 − x quantum dots with an average diameter of 7 nm are investigated experimentally. The stoichiometric ratio is found to be for by use of the energy dispersive analysis of x-ray. The photoluminescence spectrum, the photoluminescence excitation spectrum, and the surface passivation are adopted to characterize the properties of surface defect states. The energy levels of surface defect states of CdTe_xS_1 − x quantum dots are also determined.     

First-principles study of the H and F centers in LiYF4

We have investigated the electronic structures of the LiYF₄ containing interstitial fluorine atoms and F center (a fluorine ion vacancy trapping an electron) using first-principles density functional theory. It is found that the interstitial fluorine atoms in two different interstitial positions would combine with its nearest neighbor two or three formal lattice fluorine ions forming fluorine molecular ions or by different ways, which would cause the 260 nm absorption band. Simultaneously, our study indicates that one electronic state appears in the forbidden band of the perfect LiYF₄ crystal resulting from the F center in the LiYF₄ crystal. And the energy difference of this electronic state and the bottom of the conduction band is 3.74 eV, corresponding to the 331 nm absorption band. It is predicted that the 330 nm absorption band could arise from the F center in LiYF₄ crystals.     

Rotational and vibrational structure in the 288 nm band system of the FeCl2 radical

The laser excitation spectrum of the 288 nm band system of FeCl₂, formed in a free-jet expansion, has been recorded at a rotational temperature of approximately 10 K. Vibronic transitions are observed from the ground state to two close-lying excited electronic states that differ in inversion (g, u) parity. Two extensive progressions in the symmetric stretching vibration have been identified, referred to as Progressions A and B. The main features of Progression A, which is based on the band, are allowed transitions to the excited electronic state of ungerade symmetry. Progression B is built on the band and consists of vibronically induced transitions to the gerade excited state. A substantial decrease in the symmetric stretching vibrational wavenumber is observed on excitation . Local perturbations are found to cause relative shifts between the different isotopomers. Several vibronic bands have been recorded and analysed at rotational resolution for the three isotopomers Fe³⁵Cl₂, Fe³⁵Cl³⁷Cl, and Fe³⁷Cl₂ in natural abundance. All bands show perpendicular rotational structure of a linear molecule, and have been unambiguously assigned to a Ω = 5-4 transition, consistent with the inverted ⁵Δ_g ground state predicted by ab initio and DFT calculations. The zero-point averaged FeCl bond length is determined to be in the upper and lower electronic states. The results show that the molecule is linear in both states.     

Absorption spectra of AsH2 radical in 435-510 nm by cavity ringdown spectroscopy

The absorption spectra of jet-cooled AsH₂ radicals were recorded in the wavelength range of 435-510 nm by cavity ringdown spectroscopy. The AsH₂ radicals were produced by pulsed DC discharge in a molecular beam of a mixture of AsH₃, SF₆, and argon. Seven vibronic bands with fine rotational structures have been identified and assigned as the , , and (n = 1-3) bands of the electronic transition. Based on the previous studies of AsH₂ radical, rotational assignments and rotational term values for each band were obtained, and the molecular parameters including vibrational constants, rotational constants, centrifugal distortion constants, and spin-rotation interaction constants were also determined.     

Preparation of CaWO4:Ln@SiO2 (Ln=Tb, Dy and Ho) nanoparticles by a combustion reaction and their optical properties

The CaWO₄:Ln³⁺@SiO₂ (Ln=Tb, Dy and Ho) nanoparticles were synthesized via a combustion process at 800 °C, using citric acid as chelating agent and fuel, ammonium nitrate as fuel, boric acid as flux material and silica as supports. The persistent phosphor nanoparticles were characterized by X-ray diffraction (XRD), reflectance UV-vis and fluorescence spectroscopy (PL) and transmission electron microscopy (TEM) techniques. XRD patterns indicated that crystalline calcium tungstate with scheelite structure was produced. The reflectance UV-vis spectra showed the broad absorption band of groups and the PL spectra showed the wide excitation band, broad emission band of and characteristic emissions of Ln³⁺ ions. The average particle sizes were determined by TEM, which are about 50 nm.     

Direct recognition of non-radiative recombination centers in semi-insulating LEC InP:Fe using double excitation photoluminescence

In order to observe the effect of intra-band gap excitation on the photoluminescence (PL) properties of undoped InP and iron doped InP (InP:Fe), PL measurements were performed in InP crystals with thickness of 360 μm and area of about 4×3 mm², grown by the liquid encapsulated Czochralski (LEC) technique upon excitation with both Ar-ion laser and 980 nm light. The PL intensities for InP:Fe under 980 nm wavelength light illumination relative to no illumination increased by about 52%, 33%, and 12% for the 1.337, 1.380, and 1.416 eV peaks, respectively, at 10 K, whereas there was no illumination effect for undoped InP. This is a strong indication that Fe centers play a role as non-radiative recombination centers to decrease the PL intensity. PL experiments were performed in the spectral range of 1320-1440 meV for InP in the sample temperature range of 10-160 K. The electron and hole photoionization cross-sections at 980 nm wavelength light illumination were calculated as and , respectively.     

Rotationally resolved electronic spectroscopy of a nonlinear carbon chain radical C6H4

Rotationally resolved electronic spectrum of the origin band in the 2A″-X2A″ transition of a nonlinear carbon chain radical C₆H₄⁺ has been recorded in the 604 nm region using cw cavity ring down spectroscopy. The radical was produced by a discharge through an acetylene-helium mixture in a supersonic planar expansion. The rotational structure has been analysed and precisely determined. A band having a-type prolate rotational structure has also been observed near 581 nm. By considering the results of ab initio calculations this band is assigned to a transition involving the excitation of the ν₁₂ fundamental in the upper 2A″ electronic state of the same C₆H₄⁺ isomer.     

发射光谱研究氩气/空气混合气体介质阻挡放电能量传递过程

使用水电极介质阻挡放电装置,对比氩气与氩气/少量空气的混合气体以及空气与空气/少量氩气的混合气体放电的发射光谱,研究了氩气与空气相混合时气体放电中的能量传递过程。实验发现, 当氩气中加入少量的空气时,氩原子谱线均变弱,说明空气中的氮分子对氩原子的各激发态具有猝灭作用。并且随着空气含量的增加,各谱线变弱的速率不同。越是与氮分子的激发电位接近的氩原子的激发态被猝灭的作用越明显。另一方面,当空气中加入少量氩气时,发现氮分子第二正带系和氮分子离子第一负带系的谱线均被增强。说明在空气/少量氩气放电中,氮分子的激发由于亚稳态氩原子的潘宁激发传能而增强。因此在氩气/空气混合气体放电中,气体成分及比例影响放电的发光特性和能量传输特性。     

Microstructure of epitaxial scandium nitride films grown on silicon

Epitaxial scandium nitride films (225 nm thick) were grown on (1 1 1)-oriented silicon substrates by molecular beam epitaxy (MBE), using ammonia as a reactive nitrogen source. Film microstructure was investigated using X-ray diffraction (XRD). The (1 1 1) ω-scan FWHM of 0.551° obtained for films grown at 850 °C is the lowest reported so far for ScN thin films. The principal orientation of ScN with respect to Si is (1 1 1)_ScN//(1 1 1)_Si and []_ScN//[]_Si, representing a 60° in-plane rotation of the ScN layer with respect to the Si substrate. However, some twinning is also present in the films; the orientation of the twinned component is (1 1 1)_ScN//(1 1 1)_Si and []_ScN//[]_Si, representing a ‘cube-on-cube’ orientation. The volume percentage of these twins in the films decreases with increasing film growth temperature.     

Multispectrum fitting of line parameters for C2H2 in the 3.8-μm spectral region

Using FT spectra (Bruker IFS 120, unapodized FWHM resolution ≈ 0.001 cm⁻¹) of acetylene ¹²C₂H₂, absolute positions and intensities have been measured for about 250 lines between 2600 and 2800 cm⁻¹ in the and cold bands, and in the and hot bands. These measurements improve the accuracy of wavenumbers previously available and lead to individual line intensities for the first time in this spectral region. A multispectrum fitting procedure has been used to retrieve line parameters from five experimental spectra recorded at different pressures. The frequencies of the ν₃ band of ¹²C¹⁶O₂ allowed to perform an absolute wavenumber calibration. The accuracy of the amount of ¹²C₂H₂ in the sample has been checked using the cold band around 2100 cm⁻¹, and has been estimated to be around ±2%. The average absolute accuracy of the line parameters obtained in this work has then been estimated to be ±0.0002 cm⁻¹ for line positions, and ±5% for line intensities. For each studied band, the vibrational transition dipole moment squared value has been determined, as also empirical Herman-Wallis coefficients. A complete line list containing positions and intensities for the five strongest bands around 3.8 μm has been set up for atmospheric applications.     

Synthesis of carbon nanotubes and iron oxide nanoparticles in MW plasma torch with Fe(CO)5 in gas feed

The MW plasma torch (2.45 GHz) in the mixture of CH₄/H₂/Ar (42/430/1540 sccm) with added Fe(CO)₅vapors was used for the synthesis of iron oxide nanoparticles and carbon nanotubes. The particles with well-defined facets consisting of Fe₃O₄ and -Fe₂O₃ and self-assembled into long chains were produced at the power of 360 W. At higher power of 440-460 W the deposit contained significant amount of multi-walled carbon nanotubes covered by iron oxide nanoparticles. The diameter of CNTs was 8-20 nm. The particles had Fe₃O₄ and/or -Fe₂O₃ cores of spherical shape covered by a thin layer of carbon.     

First-principles study on the electronic structures and absorption spectra for the PbWO4 crystal with lead vacancy

The electronic structures and absorption spectra for the perfect PbWO₄ (PWO) crystal and the crystal containing lead vacancy have been calculated using density functional theory code CASTEP with the lattice structure optimized. The calculated absorption spectra of the PWO crystal containing exhibit seven absorption bands peaking at 1.72 eV (720 nm), 2.16 eV (570 nm), 2.81 eV (440 nm), 3.01 eV (410 nm), 3.36 eV (365 nm), 3.70 eV (335 nm) and 4.0 eV (310 nm), which are very close to the experimental values. It predicts that the 330, 360, 420, 500-750 nm absorption bands are related to the existence of in the PWO crystal.     

Observation of internal-conversion electrons induced by inelastic nuclear resonant scattering

Measurements of the internal-conversion electron emission due to the inelastic nuclear resonant excitation are reported. thin films of 20 and 1.3 nm thickness were deposited on Si(1 1 1), and the internal-conversion electrons were measured as a function of the photon energy. From the inelastic part of the spectra, the phonon density of states was obtained. Whereas the phonon density of states of 20-nm thick film resembles that of bulk -Fe, the 1.3-nm thick film revealed an obvious softening of the acoustic mode.     

Spectroscopic characterization of the potential energy functions of Ne2 Rydberg states in the vicinity of the Ne(S0) + Ne(4p′) dissociation limits

The gerade autoionizing Rydberg states of Ne₂ have been studied in the range 162 000-172 000 cm⁻¹ by 1 + 1′ resonant two-photon excitation from the Ne₂ X ground state via different vibrational levels of the Ne₂ C state. A rotationally resolved part of the spectrum allowed the determination of the potential energy functions of two states of 1_g and characters in the vicinity of the Ne(2p⁶¹S₀) + Ne (2p⁵4p′) dissociation limit. The presence of maxima in these potential energy functions is interpreted as originating from a repulsive interaction between the Rydberg electron and the neutral atom.