The effects of Xe irradiation on He and H co-implanted Si

A combination of X-ray diffraction, cross-sectional transmission electron microscopy (XTEM), and Raman spectroscopy was used to study the effects of irradiation with swift heavy ions on helium and hydrogen co-implanted silicon.<100>-oriented silicon wafers were co-implanted with 30 keV helium to a dose of 3×10¹⁶He⁺/cm² and 24 keV protons to a dose of 2×10¹⁶ H⁺/cm². Moreover, selected helium and hydrogen co-implanted Si wafers were irradiated with 94 MeV xenon. After He and H co-implantation and Xe-irradiation, the wafers were annealed at a temperature of 673 K for 30 min. The damage region of the wafers was examined by the XTEM analysis. The results reveal that most of the platelets are aligned parallel to the (100) plane in the He and H co-implanted Si. However, majority of the platelets lie in<texlscub>111</texlscub>planes after Xe irradiation. Blisters do not occur on the sample surface after Xe irradiation. Raman results reveal that the intensities of both SiH₂ and V₂H₆ modes increase with the increase in the dose of Xe. A possible explanation is that strong electronic excitation during Xe irradiation produces annealing effect, which reduces both lattice damage and the out-of-plane tensile strain.     

Effect of simultaneous helium implantation on the microstructure evolution of Inconel X-750 superalloy during dual-beam irradiation

This study focuses on investigation into the effect of helium implantation on microstructure evolution in Inconel X-750 superalloy during dual-beam (Ni⁺/He⁺) irradiation. The 1 MeV Ni⁺ ions with the damage rate of 10^?3 dpa/s as well as 15 keV He⁺ ions using rate of 200 appm/dpa were simultaneously employed to irradiate specimens at 400 °C to different doses. Microstructure characterization has been conducted using high-resolution analytical transmission electron microscopy (TEM). The TEM results show that simultaneous helium injection has significant influence on irradiation-induced microstructural changes. The disordering of γ′ (Ni₃ (Al, Ti)) precipitates shows noticeable delay in dose level compared to mono heavy ion irradiation, which is attributed to the effect of helium on promoting the dynamic reordering process. In contrast to previous studies on single-beam ion irradiation, in which no cavities were reported even at high doses, very small (2–5 nm) cavities were detected after irradiation to 5 dpa, which proved that helium plays crucial role in cavity formation. TEM characterization also indicates that the helium implantation affects the development of dislocation loops during irradiation. Large 1/3 〈1?1?1〉 Frank loops in the size of 10–20 nm developed during irradiation at 400 °C, whereas similar big loops detected at higher irradiation temperature (500 °C) during sole ion irradiation. This implies that the effect of helium on trapping the vacancies can help to develop the interstitial Frank loops at lower irradiation temperatures.     

Ar+, He+，S+离子轰击n-InP单晶表面的机理研究

通过X射线光电子能谱和低能电子衍射实验研究了10～180 eV的Ar⁺、 He⁺、S⁺离子轰击n-InP(100)表面, 发现S⁺离子轰击可以产生In-S组分,减轻离子轰击对表面的物理损伤.对于Ar⁺离子轰击后的表面,经过S⁺离子处理和加热过程以后,表面损伤得到了修复,最终得到了2×2的InP表面,进一步验证了S⁺离子对InP表面的修复作用.     

Ion track effect on point defect production in SiC

Low-temperature (40 K) photoluminescence (PL) measurements were used to follow the defect formation induced in the 4H-SiC epitaxial layer by irradiation with 200 keV H⁺ and 800 keV C⁺ in the fluence range of 5×10⁹–3.5×10¹² ions/cm². After irradiation, the PL spectra show the formation of some sharp lines, called “alphabet lines”, located in the wavelength range of 425–443 nm, due to the recombination of excitons at structural defects induced by ion beams. The analysis of luminescence line intensity versus ion fluence allows us to mark two different groups of peaks, namely the P1 group (e, f and g lines) and the P2 group (a, b, c and d lines). The normalised yield of P1 group lines increases with ion fluence and reaches a maximum value, while the normalised yield of P2 group lines exhibits a threshold fluence and then increases until a saturation value is reached. These different trends indicate that, while the P1 group lines are related to the primary defects created by ion beams (interstitial defects, vacancies), the P2 group lines can be associated with some complex defects (divacancy, antisites). The trends are similar for irradiation with H⁺ and C⁺ ions; however, the defect formation occurs in the fluence range of 5×10⁹–10¹¹ ions/cm² for C⁺ irradiation and 10¹¹–4×10¹² ions/cm² for H⁺ irradiation. Taking into account the different values of energy deposited in elastic collision, a dependence on the ion type was found: the C⁺ ion results in being less effective in defect production as a higher defect recombination occurs inside its dense cascade.     

Screening effects in secondary electron production by equal velocity H+, H+2, He+, He++ions

Electron spectra produced by equal velocity (0.75 MeV/amu) H⁺, H⁺₂, He⁺ and He ⁺⁺ ions are shown. Screening effects are observed for He⁺ ions but not for H⁺₂. He⁺⁺ cross sections scale like Z² = 4 when compared to H⁺ cross sections.     

Helium irradiation-induced defects in deformed 316L stainless steel

Well-annealed 316L stainless steel was first cold rolled to 10% and 20% reductions in thickness and then irradiated by 50 keV He⁺ to a dose of 1 × 10²⁰ He⁺/m² at room temperature. Thermal desorption spectroscopy was used to investigate the helium desorption behaviour at different helium trapping states. The results showed that high-density dislocations had stronger inhibitory effect for helium desorption at temperatures from 800 to 1200 K. Positron annihilation Doppler broadening spectroscopy measurements were used to investigate the distribution of helium irradiation-induced defects. The S–E and ΔS–E plots clearly demonstrated that the helium irradiation-induced defects were trapped and restricted in motion by dislocations. The interaction between dislocations and helium irradiation-induced defects in deformed 316L stainless steel was investigated.     

Desorption of cluster ions from adsorbed methane under cryogenic condition by low-energy ion irradiation

We have investigated ion desorption from adsorbed methane following keV He⁺ ion irradiation. The thickness of the adsorbed layer was precisely controlled. For mono-layered methane, only monomer ions (CH_x⁺) were desorbed by 1 keV He⁺ ion irradiation. On the other hand, a large number of cluster ions (C_nH_x⁺) up to n = 20 were desorbed from multi-layered film. Among cluster ions, molecular ions with CC bonds were found, which indicates that chemical bonds are newly formed by ion irradiation. Based on the results for thickness dependences of the mass spectral patterns, it was elucidated that the monomer ions are desorbed from the top surface layer through single electron excitation. While the cluster ions are formed mainly in the inside of the layers along the nuclear track due to the high-density electronic excitation, which is produced by nuclear collision between incident He⁺ ions and frozen molecules.     

Ion-electron coincidence study of the thermal He(23S) + H2 Penning reaction

A new Penning-electron-Penning-ion coincidence method is described. It is applied to the study of the thermal reaction of He(2³S) with H₂. The main results reported are separate electron energy spectra that are coincident with the three different ions formed: HeH₂⁺, HeH⁺ and H₂⁺. Based on these results it is shown that the Penning reaction of the He(2³S)/H ₂ system proceeds in two well-separated steps: (i) ionization at distances R (HeH₂) ? 6a₀ in which H₂⁺ (v) is formed in different vibrational states; and (ii) reactive collision of H₂⁺ (v) with He. For the second step the variation of the branching ratios with vibrational quantum numbers v = 0 to v = 10 is derived, and it is shown that these branching ratios may be regarded as relative vibrational-energy-dependent cross-sections for the collision of H₂⁺ (v) with He at an average relative kinetic energy of ～20 meV.     

Positron annihilation studies of heavy-ion induced radiation damages in stainless steels

Variable-energy (0–30 keV) positrons were used to study the depth distribution of heavy-ion induced vacancy type defects in the following specimens, SUS304 and SUS316 austenitic stainless steels, a SUS444 ferritic stainless steel and nickel metal, which were irradiated by 0.5 MeV He⁺, 2.0 MeV C⁺, 3.5 MeV Si²⁺ and 4.0 MeV Ni²⁺ ions up to 0.01 dpa at peak. Vacancy type effective residual defects (ERD) were evaluated from the line shape parameterS of Doppler broadened positron annihilation photon spectra. With increasing primary knockon atom (PKA) energy, a decrease of the vacancy type ERD was observed. The ERD differences among the specimens are discussed in comparison with theoretical predictions.     

Theoretical study of charge-exchange and excitation processes in collisions of He<Superscript>+</Superscript> ions with C<Superscript>5+</Superscript>, N<Superscript>6+</Superscript>, and O<Superscript>7+</Superscript> hydrogen-like ions

Data on the cross sections for single-electron charge exchange and excitation in collisions of He⁺ ions with C⁵⁺, N⁶⁺, and O⁷⁺ ions in the He⁺ ion energy range of 0.2–3.0 MeV are obtained for the first time. The cross sections for the single-electron charge transfer into the singlet and triplet 1snl states of C⁴⁺, N⁵⁺, and O⁶⁺ (2≤n≤5) ions and for the 1s → 2p _{0, ±1} electronic excitation of He⁺(1s) ions are calculated. The calculations were performed by solving close-coupling equations on the basis of ten two-electron quasi-molecular states.     

Surface composition modification of tungsten higher oxide under He<Superscript>+</Superscript> ion bombardment

The surface reduction of higher oxide WO₃ under irradiation by He⁺ ions with the energies 1 and 3 keV in a high vacuum is investigated by X-ray photoelectron spectroscopy. It is found that lower WO₂ and intermediate WO _x (2 < x < 3) oxides form first in WO₃ surface layers under He⁺ ion bombardment, and with an increase in the irradiation dose metallic tungsten forms. It is shown that the degree of irradiated oxide surface metallization increases with an increase in the energy of the bombarding He⁺ ions. A comparison of WO₃ oxide surface composition modification under He⁺ and Ar⁺ ion irradiation is presented.     

H<Superscript>+</Superscript> and He<Superscript>2+</Superscript> impact charge transfer cross sections of magnesium

H⁺ impact single and He²⁺ impact single and double electron capture cross sections of magnesium atoms have been calculated in the modified binary encounter approximation (BEA). The accurate expressions of ion impact s_DE\sigma _{\Delta {E}} (cross section for energy transfer DE\Delta E) and Hartree-Fock momentum distributions of the target electrons have been used throughout the calculations. On the basis of the present work it is concluded that inner shell captures by H⁺ and He²⁺ ions incident on magnesium atoms contribute partly to single electron capture and partly to transfer ionization cross sections. The calculated He²⁺ impact double electron capture cross sections of magnesium are in reasonably good agreement with the experimental observations. This indicates the success of the present theoretical approach in study of charge transfer cross sections of atoms as indirect mechanisms do not interfere with double electron capture processes in this case.     

Investigation of the radiation damage to a single crystal of KCl using the method of backward scattering and chaneling of hydrogen and helium ions

The method of channeling and backward scattering of H⁺ and He⁺ ions has been used to analyze the radiation defects in a single crystal of KCl when the crystal is irradiated with H⁺ and He⁺ ions with energies of 1 MeV. The position of the displaced atoms in the crystal lattice was determined and the value of the cross section for the formation of radiation defects and their rate of formation as a function of the radiation dose and orientation of the bombarded beam with respect to the 100 crystallographic axes of the crystal are found. The effect of an external electric field on the formation of the radiation defects was investigated. The effects of irradiation with H⁺ and He⁺ ions are compared with one another. It is shown that mechanisms connected with ionization and excitation of the crystal atoms make the main contribution to the formation of defects.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 3, pp. 49–53, March, 1980.     

Theoretical Study of Triatomic Systems Involving Helium Atoms

The triatomic ⁴He system and its isotopic species ${^4{\rm He}_2^3{\rm He}}$ are theoretically investigated. By adopting the best empirical helium interaction potentials, we calculate the bound state energy levels as well as the rates for the three-body recombination processes: ⁴He + ⁴He + ⁴He → ⁴ He₂ + ⁴He and ⁴He + ⁴He + ³He → ⁴He₂ + ³He. We consider not only zero total angular momentum J = 0 states, but also J > 0 states. We also extend our study to mixed helium-alkali triatomic systems, that is ⁴He₂ X with X = ⁷Li, ²³Na, ³⁹K, ⁸⁵ Rb, and ¹³³Cs. The energy levels of all the J ≥ 0 bound states for these species are calculated as well as the rates for three-body recombination processes such as ⁴He + ⁴He + ⁷Li → ⁴ He₂ + ⁷Li and ⁴He + ⁴He + ⁷Li → ⁴ He⁷Li + ⁴He. In our calculations, the adiabatic hyperspherical representation is employed but we also obtain preliminary results using the Gaussian expansion method.     

Formation of bubbles and blisters in hydrogen ion implanted polycrystalline tungsten

ABSTRACT

Tungsten (W) has been regarded as one of the most promising plasma facing materials (PFMs) in fusion reactors. The formation of bubbles and blisters during hydrogen (H) irradiation will affect the properties of W. The dependence of implantation conditions, such as fluence and energy, is therefore of great interest. In this work, polycrystalline tungsten samples were separated into two groups for study. The thick samples were implanted by 18?keV H₃⁺ ions to fluences of 1?×?10¹⁸, 1?×?10¹⁹ and 1?×?10²⁰ H⁺/cm², respectively. Another thick sample was also implanted by 80?keV H₂⁺ ions to a fluence of 2?×?10¹⁷ H⁺/cm² for comparison. Moreover, the thin samples were implanted by 18?keV H₃⁺ ions to fluences of 9.38?×?10¹⁶, 1.88?×?10¹⁷ and 5.63?×?10¹⁷ H⁺/cm², respectively. Focused ion beam (FIB) combined with scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used for micro-structure analysis, while time-of-flight ion mass spectrometry (ToF-SIMS) was used to characterize the H depth profile. It is indicated that bubbles and blisters could form successively with increasing H⁺ fluence. H bubbles are formed at a fluence of ～5.63?×?10¹⁷ H⁺/cm², and H blisters are formed at ～1?×?10¹⁹ H⁺/cm² for 18?keV H₃⁺ implantation. On the other hand, 80?keV H₂⁺ ions can create more trapping sites in a shallow projected range, and thus enhancing the blisters formation with a relatively lower fluence of 2?×?10^17?H⁺/cm². The crack-like microstructures beneath the blisters are also observed and prefer to form on the deep side of the implanted range.     

Use of a diabatic molecular expansion in studies on electron capture by He2+ ions in helium at keV energies

In this preliminary work, using a 3-state diabatic molecular expansion without any excited channels, we have studied within the semiclassical impact parameter approximation the single charge transfer process He²⁺+He(1s ²)→He⁺(1s)+He⁺(1s). Our results agree very well with experiment, which demonstrates the usefulness of this type of diabatic molecular basis in doubly charged ion-atom collision systems.     

In situ 1H NMR Study of Nanoreactor Interaction NH3–H2O in Zeolite Nanopores

The interaction between ammonium NH₃ and H₂O molecules in zeolitic nanopores is studied by in situ ¹H nuclear magnetic resonance (NMR) method. The powder and single crystal samples of natural zeolites, heulandites Ca₄[Al₈Si₂₈O₇₂]·24H₂O and clinoptilolite (Na, K,Ca_1/2)₆[Al₆Si₃₀O₇₂], were used as the model system. It is shown that penetration of NH₃ into the zeolitic nanopores is accompanied by disordering of the hydrogen sublattice of zeolitic water and by the fast proton exchange NH₃ + H₂O ? [NH₄]⁺ + [OH]^? characterized by correlation frequency v _c = ~40 kHz. Another nanoreactor interactions are represented by interaction of [NH₄]⁺ ions with exchangeable Na⁺ and Ca²⁺ ions of the zeolitic structure. The slow ionic exchange [NH₄]⁺ → [Na,Ca_1/2]⁺ and binding of [NH₄]⁺ in cationic sites of the framework were visualized by NMR spectroscopy along with stepwise release of (Na,Ca_1/2)OH from zeolitic pores to the external surface of zeolite grains.     

Roles of local He concentration and Si sample orientation on cavity growth in amorphous silicon

(111)- and (100)-oriented Si samples were implanted with Si⁺ ions at 1 MeV to a dose of 1?×?10¹⁶?cm^?2 and with 5?×?10¹⁶ He⁺ cm^?2 at 10?keV or 50?keV and eventually annealed in the 800–1000°C temperature range. Sample characterisation was carried out by cross-section transmission electron microscopy, positron annihilation spectroscopy and nuclear reaction analysis. In addition to the formation of He bubbles at the projected range of He, bubbles were observed after solid-phase epitaxial growth (SPEG) of the embedded amorphous Si layer. The He threshold concentration required to obtain thermally stable bubbles in amorphised Si is between one and four orders of magnitude lower than in c-Si. Since bubble formation and growth take place in the a-Si phase, the interaction with SPEG during annealing was studied by considering (100) and (111) Si. Both the SPEG velocity and the resulting defects play a role on bubble spatial distribution and size, resulting in bigger bubbles in (111) Si with respect to (100) Si.     

Yields of H+ and He+ at the energy for elastic scattering from H2+3He+ incident on Ag and Pd

Yields, Y, of H⁺ and He⁺ emerging specularly with the energy for single binary elastic collisions have been measured from polycrystalline Ag and Pd surfaces bombarded with mixed monoenergetic (300 < E₀ < 2600 eV) beams of H₂⁺³He⁺ impinging at an angle of 45° from the surface normal. The surfaces were exposed to H₂⁺ at a dynamic pressure of 8 × 10^?3 Pa (6 × 10^?5 Torr) during the measurements. The He⁺ yields from Pd are slightly larger than from Ag, and the H⁺ yields from Pd are 10 to 40 times as large as those from Ag. These results suggest that differences between Pd and Ag in the amount of hydrogen adsorbed and in the character of the hydrogen-metal bond may be responsible for the yield differences through shadowing by, and possibly the sputtering of, adsorbed hydrogen. The Y versus E₀ curves for all four systems have qualitatively the same singly peaked shape which implies that reactive and noble gas ions undergo similar neutralization processes during elastic surface collisions. The ratios of the yields from Ag and Pd do not exhibit the theoretically expected exponential dependence on collision time over the entire range studied, but at the lowest energies the ratios lead to estimates of the difference of neutralization constants which do agree with theory. The potential utility of the large difference in proton yields from Ag and Pd for studying the Ag-Pd alloy system is noted.     

On the nature of ion bombardment-induced phase transformations in films of transition metals

Abstract

Electron diffraction studies have been made of polycrystalline Ni films irradiated with well separated beams of ions of different nature, namely ions of inert (He⁺, Ne⁺, Ar⁺, Kr⁺, Xe⁺) and reactive (N⁺ and O⁺) gases. The Ni films were prepared under vacuum conditions (P? 3·10^?6Pa during evaporation) preventing an appreciable contamination of the films with impurities. The samples were irradiated at T? 300 K with ion beams of energies from 10 to 100 keV in the dose range between 5·10¹⁶ cm^?2 and the value leading to sample destruction.

Irradiation with noble gas ions revealed no phase transitions in the Ni films. A similar result was obtained in irradiation of Fe and Cr films with He⁺ ions. The bombardment of Ni films with reactive gas ions does cause changes in the lattice structure of the samples under study, depending on the nature of the bombarding ions. The N⁺ ion bombardment gives rise to the hcp phase with the lattice parameters typical of the Ni₃N compound, and the O⁺ ion bombardment results in the fcc phase with the NiO-type parameter.

The conclusion is drawn on the chemical origin of the phase transformations in the Ni films under ion bombardment. The necessity of revising the concept about the polymorphous nature of phase transformations induced in the films of transition metals by ion bombardment is substantiated.