Dielectric response of doped Bi<Subscript>12</Subscript>TiO<Subscript>20</Subscript>: Ru crystals in an alternating electric field

The results of examination of AC dependences of capacitance and dielectric loss tangent of sillenite Bi₁₂TiO₂₀ crystals doped with ruthenium on frequency are presented. Non-Debye dispersion of dielectric coefficients is found in the frequency interval of 5 × 10²–10⁵ Hz, and a resonance phenomenon is observed. Polarization processes in the studied samples are attributed to relaxators associated with metal–oxygen vacancies and structural elements incorporating 6s² lone-pair electrons.     

Response of the capacitance and dielectric loss of the SrRuO<Subscript>3</Subscript>/SrTiO<Subscript>3</Subscript>/SrRuO<Subscript>3</Subscript> film heterostructures to variations in temperature and electric field

Three-layer epitaxial heterostructures with a 750-nm-thick intermediate strontium titanate layer between two strontium ruthenate conductive thin-film electrodes have been grown by laser deposition. Photolithography and ion etching have been used to form film parallel-plate capacitors based on the grown heterostructures. The capacitance (C) and dielectric loss tangent (tanδ) of the parallel-plate capacitors have been measured in the temperature range T = 4.2–300 K at an applied bias voltage of up to ±2.5 V and without it. At T > 100 K, the temperature dependence of the dielectric permittivity (ε) of the SrTiO₃ intermediate layer is well approximated by the Curie–Weiss law taking into account the capacitance induced by the penetration of an electric field into the oxide electrodes. At T ≈ 20 K, the dielectric permittivity ε of the SrTiO₃ intermediate layer decreases by approximately 20% in an electric field of 25 kV/cm. The dielectric loss tangent of the film capacitor heterostructures decreases monotonically with a decrease in the temperature in the range from 300 to 80 K and almost does not depend on the electric field strength. However, in the range from 80 to 4.2 K, the dielectric loss tangent increases nonmonotonically (abruptly) with a decrease in the temperature and decreases significantly in an applied electric field.     

Electromechanical properties of Pb<Subscript>3</Subscript>Ga<Subscript>2</Subscript>Ge<Subscript>4</Subscript>O<Subscript>14</Subscript> piezoelectric crystals grown from solution in a melt

Single crystals of lead gallium germanate Pb₃Ga₂Ge₄O₁₄ are grown from their own solution melts. The propagation of bulk acoustic waves is investigated, and the elastic, piezoelectric, and dielectric constants are calculated. The temperature dependences of the dielectric constants of this compound are analyzed.     

Low-frequency relaxation processes in Pb<Subscript>5</Subscript>Ge<Subscript>3</Subscript>O<Subscript>11</Subscript> ferroelectric crystals

Measurements and analysis of the temperature and frequency dependences of permittivity and losses and of the electrical resistivity of Pb₅Ge₃O₁₁ ferroelectric crystals at temperatures of 100 to 600 K and frequencies of 0.1 to 100 kHz are reported. The dielectric characteristics of the crystals exhibit, in addition to clearly pronounced anomalies near the Curie point T_C=450 K, less distinct anomalous features of the relaxation character in the range 230–260 K. The data obtained on the effect of various factors (degree of crystal polarization, crystal annealing at different temperatures and in different environments, etc.) on the low-temperature anomalies serve as a basis for discussing the possible mechanisms responsible for these anomalies. It is concluded that the low-temperature dielectric anomalies originate from thermal carrier localization in defect levels in the band gap, which entail the formation of local polarized states.     

Analysis of the exchange magnetic structure in Pb<Subscript>3</Subscript>Mn<Subscript>7</Subscript>O<Subscript>15</Subscript>

The indirect-coupling model is used to analyze the exchange magnetic structure of Pb₃Mn₇O₁₅ in the hexagonal setting. The ratios of manganese ions Mn⁴⁺/Mn³⁺ in each nonequivalent position are determined. Pb₃(Mn_0.95Ge_0.05)₇O₁₅ and Pb₃(Mn_0.95Ga_0.05)₇O₁₅ single crystals are grown by the solution–melt method in order to test the validity of the proposed model. The structural and magnetic properties of the single crystals are studied. The magnetic properties of the grown single crystals are compared with those of nominally pure Pb₃Mn₇O₁₅.     

Role of Ge incorporation in the physical and dielectric properties of Se<Subscript>75</Subscript>Te<Subscript>25</Subscript> and Se<Subscript>85</Subscript>Te<Subscript>15</Subscript> glassy alloys

The effect of Ge additive on the physical and dielectric properties of Se₇₅Te₂₅ and Se₈₅Te₁₅ glassy alloys has been investigated. It is inferred that on adding Ge, the physical properties i.e., average coordination number, average number of constraints and average heat of atomization increase but lone pair electrons, fraction of floppy modes, electronegativity, degree of crosslinking and deviation of stoichiometry (R) decrease. The effect of Ge doping on the dielectric properties of the bulk Se₇₅Te₂₅ and Se₈₅Te₁₅ glassy alloys has also been studied in the temperature range 300–350 K for different frequencies (1 kHz–5 MHz). It is found that, with doping, the dielectric constant ε^′ and dielectric loss ε^″ increase with increase in temperature and decrease with increase in frequency. The role of the third element Ge, as an impurity in the two pure binary Se₇₅Te₂₅ and Se₈₅Te₁₅ glassy alloys has been discussed in terms of the nature of covalent bonding and electronegativity difference between the elements used in making the aforesaid glassy systems.     

Polymethylmethacrylate/Fe<Subscript>3</Subscript>O<Subscript>4</Subscript> composite nanofiber membranes with ultra-low dielectric permittivity

Ultra-low dielectric permittivity poly (methyl methacrylate)/Fe₃O₄ composite fiber membranes have been successfully prepared using electrospinning. The composite membranes were characterized by SEM (scanning electron microscopy), TEM (transmission electron microscopy), FT-IR (Fourier transform infrared), XRD (X-ray diffraction) and a radio frequency (RF) impedance/capacitance material analyzer. The magnetic measurement showed that the composite membranes displayed the super-paramagnetic property. The results showed that the dielectric permittivity of the composite fiber membranes was decreasing with increasing Fe₃O₄ nanoparticle content.     

Effect of Ba-substitution on the structure and properties of Pb<Subscript>0.8</Subscript>Ba<Subscript>0.2</Subscript>[(In<Subscript>1/2</Subscript>Nb<Subscript>1/2</Subscript>)<Subscript>1-x</Subscript>Ti<Subscript>x</Subscript>]O<Subscript>3</Subscript> ceramics

Ferroelectric ceramics with formula Pb_0.8Ba_0.2[(In_1/2Nb_1/2)_1-xTi_x]O₃ (PBINT) (x=0.0,0.1,0.2,0.3,0.4 and 0.5) were prepared via a two-step solid state reaction method. It was found that ceramics with compositions in the range of x=0.0∼0.3 showed a pseudo-cubic structure, whereas the ceramic with x=0.5 displayed a tetragonal structure. All compositions showed significant frequency dispersion in their dielectric properties. The remanent polarization P_r as well as the coercive field E_c, measured at room temperature, increases with the Ti content. The experimental results obtained in this system are summarized into a phase diagram, with the morphotropic phase boundary (MPB) located at x=0.4. Compared with the Pb[(In_1/2Nb_1/2)_1-xTi_x]O₃ solid solution system, incorporating Ba in the A-site leads to a significant decrease in the dielectric maximum temperature T_max, a suppression of the dielectric relaxation parameter γ, and a shift of the MPB composition to a higher Ti content. PACS 77.84.Dy; 77.80.Bh; 77.22.Ch     

Influence of temperature and frequency on the electrical parameters of thermally evaporated metal-free phthalocyanine H<Subscript>2</Subscript>Pc thin films

The ac electrical properties of metal-free phthalocyanine (H₂PC) thin films have been studied in the frequency range from 10² to 2×10⁴ Hz and in the temperature range from 150 to 475 K. The ac conductivity σ was found to vary as ω^s with the index s≤1. Although these general values of s appear to be consistent with a hopping process, the present σ values do not increase monotonically with temperature. At low frequency, the capacitance and loss tangent were found to be constant over the entire frequency range, in good qualitative agreement with the equivalent circuit model consisting of an inherent capacitance in parallel with a resistive element. Moreover, at constant frequency, the two parameters increased with increasing temperature up to approximately 300 K. Above this temperature, another sharp decrease in both capacitance and loss tangent was obtained. This type of behavior was interpreted in terms of nomadic (delocalized) polarization, which leads to an increase in the dielectric constant. The drastic decrease of the capacitance and loss tangent observed above room temperature is thought to be related to the decrease in the dielectric constant, which results from the inability of the domains to hold the increases in free charge carrier concentration due to the increase of temperature. Received: 6 December 2001 / Accepted: 7 January 2002 / Published online: 19 July 2002 RID="*" ID="*"Corresponding author. Fax: +972-2/279-6960, E-mail: asaleh@science.alquds.edu     

Ferroelectric and dielectric properties of SrBi<Subscript>4</Subscript>Ti<Subscript>4</Subscript>O<Subscript>15</Subscript> thin films grown on Bi<Subscript>4</Subscript>Ti<Subscript>3</Subscript>O<Subscript>12</Subscript> film layer

Ferroelectric and dielectric properties of bilayered ferroelectric thin films, SrBi₄Ti₄O₁₅ grown on Bi₄Ti₃O₁₂, were investigated. The thin films were annealed at 700°C under oxygen atmosphere. The bilayered thin films were prepared on a Pt(111)/Ti/SiO₂/Si substrate by a chemical solution deposition method. The dielectric constant and dielectric loss of the bilayered thin films were 645 and 0.09, respectively, at 100 kHz. The value of remnant polarization (2P _r) measured from the ferroelectric thin film capacitors was 60.5 μC/cm² at electric field of 200 kV/cm. The remnant polarization was reduced by 22% of the initial value after 10¹⁰ switching cycles. The results showed that the ferroelectric and dielectric properties of the SrBi₄Ti₄O₁₅ on Bi₄Ti₃O₁₂ ferroelectric thin films were better than those of the SrBi₄Ti₄O₁₅ grown on a Pt-coated Si substrate suggesting that the improved properties may be due to the different nucleation and growth kinetics of SrBi₄Ti₄O₁₅ on the c-axis-oriented Bi₄Ti₃O₁₂ layer or on the Pt-coated Si substrate.     

Dielectric dispersion and magnetic properties of Ba-modified Pb(Fe<Subscript>1/2</Subscript>Nb<Subscript>1/2</Subscript>)O<Subscript>3</Subscript>

The polycrystalline samples of Ba-modified Pb(Fe_1/2Nb_1/2)O₃ (i.e., (Pb_1-xBa_x)(Fe_1/2Nb_1/2)O₃ PBFN, with x=0,0.05,0.07) were synthesized by a mechanosynthesis (i.e., high-energy ball milling) route followed by a mixed oxide method. Structural analysis provides the information on formation of single-phase orthorhombic structure on substitution of a small amount (x=0.07) of Ba at the Pb-site of Pb(Fe_0.50Nb_0.50)O₃ (PFN). The ferroelectric–paraelectric phase transition in PFN was observed at 383 K, which decreases on increasing Ba-concentration in PBFN. Detailed studies of dielectric properties of PBFW show the following: (i) diffuse phase transition, (ii) low loss tangent, (iii) low activation energy, and (iv) low frequency dielectric dispersion. An anomaly in the ac conductivity was found very close to phase transition temperature. The activation energy is found to decrease from 0.19 to 0.01 eV on increasing Ba-concentration to 7% (x=0.07). Temperature field-dependent magnetization measurements of all the samples showed antiferromagnetic transition at ∼15 K (for x=0.07). PBFN sample showed a slight increase in the coercivity (i.e., from 400 Oe (PFN) to 500 Oe (PBFN, for x=0.07) at 2 K. PACS 61.10.Nz; 68.37.Hk; 75.50.Ss; 75.60.Ej; 77.22.Ch; 77.22.Gm     

Microwave dielectric properties of Ba(Zn<Subscript>1/3</Subscript>Ta<Subscript>2 / 3</Subscript>)O<Subscript>3</Subscript> for application in high power waveguide window

Higher dielectric constant, low dielectric loss and good transmission characteristicshave been the goal for developing the ceramic waveguide window for high power windowapplications. The choice of materials having high k with low dielectric lossand reduced window size is key parameters to achieve maximum microwave transmissionwithout unleashing microwave dissipation. The microwave dielectric properties ofsynthesized Ba(Zn_1/3Ta_{2 /3})O₃ (BZT) ceramics have been studied for high power windowapplications. The structural studies are correlated with microwave dielectric propertiesof BZT. The maximum values of dielectric constant ?_r =30, Q ×f₀ = 102 THz and near zero temperaturecoefficient of resonance frequency were obtained for BZT ceramics sintered at thetemperature of 1550 °Cfor 4 h. The measured results are used to design a tapered transition from air filledwaveguide to narrow (reduced width and height) dielectric filled waveguide using Heckenslinear taper at a specific frequency. The simulation result shows that the lowerreflection loss is obtained for the tapered transition of the narrow BZT window ascompared to the standard waveguide BZT window. The return loss of –34 dB is obtained forS-bandwaveguide window with a bandwidth of 675 MHz. The return loss observed in the narrow BZTwindow is –46 dB with a bandwidth of 570 MHz at a center frequency of 3.63 GHz. Most ofthe disadvantages in conventional windows will be rectified using the design of the tapertransion employing narrow waveguide window in high power applications.     

Dielectric and optical properties of Pb(Mg<Subscript>1/3</Subscript>Nb<Subscript>2/3</Subscript>)<Subscript>0.8</Subscript>Ti<Subscript>0.2</Subscript>O<Subscript>3</Subscript> (PMNT-0.2) ferroelectric relaxor single crystals

The dielectric and optical (optical transmission, small-angle light scattering, birefringence) properties of PMNT-0.2 single crystals and their variation induced by a dc electric field have been studied. The birefringence was found to increase anomalously at the transition from the rhombohedral ferroelectric to the inhomogeneous relaxor phase (the spontaneous ferroelectric transition temperature T_sp). Below T_sp, the dielectric and optical properties were observed to exhibit anomalies originating from reorientation and growth of domains in size. Unlike ferroelectric relaxors of the type of PbB′_1/3B′_2/3O₃ and PbB′_1/2B′_1/2O₃, in PMNT-0.2 neither induction of the ferroelectric phase by an electric field nor thermally stimulated destruction of the ferroelectric state occurs through the percolation mechanism (i.e., they are not accompanied by anomalously narrow maxima in small-angle light scattering). This is attributed to the inhomogeneous structure of the relaxor phase, as a result of which the phase transition does not take place simultaneously in various regions of the crystal.     

Temperature evolution of the dielectric response function of Pb(Fe<Subscript>0.95</Subscript>Sc<Subscript>0.05</Subscript>)<Subscript>2/3</Subscript>W<Subscript>1/3</Subscript>O<Subscript>3</Subscript> relaxor ceramics in a wide frequency range

Electrodynamic properties of Pb(Fe_0.95Sc_0.05)_2/3W_1/3O₃ solid solution belonging to A(B'B'')O₃ perovskite structural family have been investigated by broadband dielectric spectroscopy in a wave-number range of (4 × 10^–9–4 × 10³) cm^–1 and a temperature range of 100–600 K. The influence of low-frequency relaxations on the vibrational spectrum is determined within the four-parameter factorized dispersion model. Anomalies in the behavior of the dielectric response function are found near the temperature-diffuse maximum of permittivity.     

The study of electronic conduction in amorphous thin films of Al-In<Subscript>2</Subscript>O<Subscript>3</Subscript>-Al structure deposited by thermal evaporation

A discussion of electronic conduction in amorphous thin films of Al-In₂O₃-Al structure is presented. Particular attention is given to the question of film thickness, substrate temperature during deposition and post-deposition annealing, since these conditions are known to have a profound effect on the structure and electrical properties of the films. The effects of temperature on the V-I characteristics and effects of frequency on conductivity and capacitance of the Al-In₂O₃-Al structure are also reported. Activation energies for conduction processes are estimated and the results are discussed in terms of the hopping model. The conduction at higher temperature is seemingly a contact-limited, i.e. Schottky type process, so a transition from hopping to free-band conduction takes place. The capacitance decreases with the rise of frequency and the lowering of temperature. The values of dielectric constants are estimated and the results are discussed in terms of Schottky type of conduction. The increase in conductivity with the increase in temperature during measurements of electrical properties, film thickness, substrate temperature and post deposition annealing is reported and results are discussed in terms of current theory.     

Phonon spectrum of lead oxychloride Pb<Subscript>3</Subscript>O<Subscript>2</Subscript>Cl<Subscript>2</Subscript>: Ab initio calculation and experiment

IR and Raman spectra of Pb₃O₂Cl₂ in the range of 50–600 cm^–1 have been detected for the first time. Ab initio calculations of the crystal structure and the phonon spectrum of Pb₃O₂Cl₂ in the framework of LCAO approach have been performed by the Hartree–Fock method and in the framework of the density functional theory with the use of hybrid functionals. The results of calculations have made it possible to interpret the experimental vibration spectra and reveal silent modes, which do not manifest themselves in these spectra but influence the optical properties of the crystal.     

Charge carrier mobility in crystals of the Pb<Subscript>0.67</Subscript>Cd<Subscript>0.33</Subscript>F<Subscript>2</Subscript> superionic conductor

The frequency (ν = 10^?1–10⁷ Hz) dependences σ(ν) of the conductivity of single crystals of the Pb_0.67Cd_0.33F₂ superionic conductor with the fluorite-type structure (CaF₂) in the temperature range of 132–395 K have been studied. The dependences σ(ν) have been discussed in the framework of the hopping relaxation of ionic carriers, which are mobile anions F^?. From experimental curves σ(ν), the direct-current (dc) conductivity σ_dc and the average charge carrier hopping frequency ν_h have been determined. This has made it possible to calculate the charge carrier mobility μ_mob and charge carrier concentration n _mob in these crystals. At room temperature (293 K), the electrical parameters are σ_dc = 1.6 × 10^?4 S/cm, ν_h = 2.7 × 10⁷ Hz, μ_mob = 2.0 × 10^?7 cm²/(s V), and n _mob = 5.1 × 10²¹ cm^?3.     

High-frequency EPR of Tb<Superscript>3+</Superscript>-doped KPb<Subscript>2</Subscript>Cl<Subscript>5</Subscript> crystal

High-frequency electron paramagnetic resonance (EPR) spectra of the KPb₂Cl₅:Tb³⁺ crystal have been investigated. Three types of spectra were observed in the frequency range of 74–200 GHz. The most intensive spectrum with the resolved hyperfine structure corresponded to transitions between sublevels of the¹⁵⁹Tb³⁺ ground quasi-doublet with the zero-field splitting (ZFS) close to 48 GHz. Experimental results were analyzed by the exchange charge model of the crystal field affecting terbium ions in low-symmetry Pb²⁺ positions with the chlorine sevenfold coordination and the charge compensating vacancy in the nearest potassium site. The calculated values ofg-factors and ZFS were in agreement with the experimental data. The nature of a broad EPR line with ZFS of about 180 GHz and of additional weak EPR lines observed as satellites of the main Tb³⁺ lines was discussed.     

A Raman and dielectric study of a diffuse phase transition in (Pb<Subscript>1-x</Subscript>Ca<Subscript>x</Subscript>)TiO<Subscript>3</Subscript> thin films

Dielectric and Raman scattering experiments were performed on polycrystalline Pb_1-xCa_xTiO₃ thin films (x=0.10, 0.20, 0.30, and 0.40) as a function of temperature. The results showed no shift in the dielectric constant (K) maxima, a broadening with frequency, and a linear dependence of the transition temperature on increasing Ca²⁺ content. On the other hand, a diffuse-type phase transition was observed upon transforming from the cubic paraelectric to the tetragonal ferroelectric phase in all thin films. The temperature dependence of Raman scattering spectra was investigated through the ferroelectric phase transition. The temperature dependence of the phonon frequencies was used to characterize the phase transitions. Raman modes persisted above the tetragonal to cubic phase transition temperature, although all optical modes should be Raman inactive. The origin of these modes was interpreted in terms of a breakdown of the local cubic symmetry due to chemical disorder. The lack of a well-defined transition temperature and the presence of broad bands in some temperature interval above the FE–PE phase transition temperature suggested a diffuse-type phase transition. This result corroborates the dielectric constant versus temperature data, which showed a broad ferroelectric phase transition in these thin films. PACS 77.80.Bh; 77.55.+f; 78.30.-j; 77.80.-e; 68.55.-a     

Electrical properties of Sr<Subscript>3</Subscript>Bi<Subscript>4</Subscript>Ti<Subscript>6</Subscript>O<Subscript>21</Subscript> thin films

Highly c-axis-oriented Sr₃Bi₄Ti₆O₂₁ (SBTi) thin films were fabricated on Pt-coated Si substrates by pulsed laser deposition (PLD). The structures were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM) and scanning electron microscopy (SEM). No peaks of SrTiO₃ (STO) could be detected in the XRD pattern, indicating the existence of the SBTi single phase. Good ferroelectric hysteresis loops of the films with Pt electrodes were obtained. With an applied field of 400 kV/cm, the measured remanent polarization (P_r) and coercive field (E_c) values were 4.1 C/cm² and 75 kV/cm respectively. The films showed little fatigue after 2.22×10⁹ switching cycles: the nonvolatile polarizations decreased by less than 5% of the initial values. The dielectric constant and the loss tangent of the films were measured to be 363 and 0.04 at 100 kHz. These results might be advantageous for nonvolatile ferroelectric random access memory (NVFRAM) and dynamic random access memory (DRAM). PACS 77.84.Dy; 77.22.-d; 68.55.Jk