Analog Integrated Circuit for Motion Detection with Simple-Shape Recognition Based on Frog Vision System

We proposed in this research a novel two-dimensional network based on the frog visual system, with a motion detection function and a newly developed simple-shape recognition function, for use in object discrimination by integrated circuits. Specifically, the network mimics the signal processing of the small-field cell in a frog brain, consisting of the tectum and thalamus, which generates signals of the motion and simple shape of an object. The proposed network is constructed from simple analog complementary metal oxide semiconductor (CMOS) circuits; a test chip of the proposed network was fabricated with a 1.2 μm CMOS process. Measurements on the chip clarified that the proposed network can generate signals of the moving direction, velocity, and simple shape, as well as perform information processing of the small-field cell. Results with the simulation program with integrated circuit emphasis (SPICE) showed that the analog circuits used in the network have low power consumption. Applications of the proposed network are expected to realize advanced vision chips with functions such as object discrimination and target tracking.     

Simple analog edge detection circuit based on vertebrate retina

Novel analog edge detection circuits were proposed and fabricated based on the vertebrate retina. The proposed unit circuit is constructed with one photodiode and about eight n-channel metal oxide semiconductor (MOS) transistors. The results with the simulation program with integrated circuit emphasis (SPICE) showed that the one- and two-dimensional array of proposed circuits can detect edge positions with a dynamic range of about 5 decades. The test circuit was fabricated on the breadboard using discrete MOS transistors. The measured results of the test circuit showed that the proposed circuit can detect edge positions. Under the condition that the photodiode used as the input part of the proposed unit circuit is 4,275 μm², the fill factor of the novel circuit is expected to be about 51.7%. The advanced integrated circuit for edge detection which is characterized by a high fill factor, wide dynamic range and low power consumption can be realized by applying the proposed circuit.     

Simple analog-digital motion detection circuit and its application to mobile robot

Simple analog-digital circuits for detecting the motion direction based on the information processing of the vertebrate retina were proposed. A network constructed with an array of proposed circuits was applied to a mobile robot. A test circuit was fabricated using discrete metal oxide semiconductor (MOS) transistors on a breadboard. The measured results of the test circuit showed that the unit circuit can output a motion signal. The motion sensor for detecting the movement direction, which consists of an array of unit circuits, was connected to the microcomputer introduced in the mobile robot. It was clarified that the proposed circuits can control the mobile robot.     

Analog Integrated Circuit for Motion Detection against Moving Background Based on the Insect Visual System

A network for displaying the velocity signal of a target edge which has larger velocity than the background was proposed and designed based on an insect visual system. In the insect visual system, the velocity signals generated by the background are inhibited by the signals generated by averaging the velocity signals from each cell and can only display the velocity signals of the target. The proposed network was constructed with simple analog circuits. The measured results of the test chip fabricated with the 1.2$mUm complementary metal-oxide-semiconductor (CMOS) process showed that the edge detection circuit inserted to the first stage of the proposed network can detect the edge position. It was apparent from the measured results of the test circuit constructed with discrete metal-oxide-semiconductor (MOS) transistors that the proposed unit circuit constructing the network can generate the velocity signals by inputting the edge signals. The results with the simulation program with integrated circuit emphasis (SPICE) showed that the proposed network can only display the velocity signals of the target edges but not those of the background. Thus, it was clarified that the various motion directions of the target can be detected independent of the background by using the proposed network.     

Analog Integrated Circuit for Motion Detection of Approaching Object Based on the Insect Visual System

A network for detection of an approaching object was proposed and fabricated based on the transient response of a descending contralateral movement detector (DCMD) existing in the brain of locusts. The proposed network was constructed with simple analog circuits. The experimental results of a test chip fabricated with a 1.2 $mUm complementary metal-oxide-semiconductor (CMOS) process and the results with a simulation program with integrated circuit emphasis (SPICE) showed that the proposed network is able to detect the approach by generating a peak current just before collision; the peak current allows detection of the approaching velocity and direction without collision. The proposed network could be applied to two-dimensional arrays for three-dimensional motion detection.     

Analog vision chip for motion detection of an approaching object against a moving background based on the insect visual system

A network for motion detection of an approaching object without influence of the moving background was proposed based on the insect visual system. The two-dimensional array of the analog complementary metal oxide semiconductor (CMOS) circuits for extracting the edge signals of the approaching object without outputting those of the moving background was inserted at the first stage of the network. At the next stage, analog CMOS circuits for detection of approaching velocity and direction, which accept the extracted edge signals, were inserted based on the locust vision system. A chip of the proposed network was fabricated with the 1.2 mm CMOS process. It was clarified from the measured results and the simulation results with the simulation program with integrated circuit emphasis (SPICE) that the two-dimensional circuits of the first stage can only generate the signals of target edges. The measured results showed that the chip can detect the approaching velocity and direction of the target in the image which contains the moving background.     

Signal Formation of Image-Edge Motion Based on Biological Retinal Networks and Implementation into an Analog Metal-Oxide-Silicon Circuit

A simplified model was proposed for the formation of edge signals and generation of motion signals of a target based on the information processing mechanisms of outer and inner retinas of a vertebrate. Analog metal-oxide-silicon (MOS) integrated circuits were designed based on the model. Simulation program with integrated circuit emphasis (SPICE) simulation results showed the performance of local adaptation over a wide dynamic range in the outer retinal circuit and generation of the velocity signal of a moving edge in the inner retinal circuit. Preliminary experimental results showed local adaptation in a given input range in the outer retinal circuit and the generation of motion pulsed signals in the inner retinal circuit.     

Analog Metal-Oxide-Semiconductor Integrated Circuit Implementation of Approach Detection with Simple-Shape Recognition Based on Visual Systems of Lower Animals

We proposed an analog network for motion detection of an approaching object with simple-shape recognition based on the visual systems of lower animals. Locusts can detect an approaching object by performing a simple process in a descending contralateral motion detector (DCMD) existing in their brain, which senses the increase in size and expansion velocity of the image projected on a retina just before collision. The responses correspond to the approaching velocity and direction. Frogs can recognize a simple shape by performing a simple process in a tectum and thalamus existing in their brain based on retinal information; this is called the Ewert von Seelen model. The proposed network was constructed with simple analog metal-oxide-semiconductor (MOS) circuits. Simulation results with a simulation program with integrated circuit emphasis (SPICE) showed that the network was able to detect the approaching velocity and direction, and also recognized simple shapes such as a circle, square, triangle and rectangle.     

A Network of Analog Metal Oxide Semiconductor Circuits for Motion Detection with Local Adaptation to a Background Image

Inspired by a mechanism of biological vision systems, a model and a network of analog metal oxide semiconductor (MOS) circuits are proposed which display an optical flow with local adaptation to the relative velocity of a background image. A function of displaying an optical flow successfully worked as a result of simulations using the simulation program with integrated circuit emphasis (SPICE). A function of varying an optical flow at a certain instant by local adaptation was also demonstrated. The proposed network is suitable for the realization of a large-scale integrated circuit (LSI), which displays an optical flow with local adaptation to the local velocity of a background.     

基于金属氧化物半导体晶体管Colpitts混沌振荡电路及其同步研究

用金属氧化物半导体(MOS)晶体管模型取代传统Colpitts混沌振荡电路中的三极管模型, 提出了一种基于MOS管的Colpitts混沌振荡电路. 通过合适的归一化方法, 得到了与基于三极管电路类似的状态模型. 平衡点的指标说明两种结构产生混沌的机理并不相同. 然后, 通过参数反演, 得到了详细的电路参数, 并用Pspice软件仿真得到了混沌吸引子和混沌信号的频谱图, 说明了此结构可在低电压下工作并且能产生高频率的混沌信号. 最后, 用误差反馈的方法实现了这种结构的同步. 关键词： Colpitts混沌 金属氧化物半导体晶体管 低电压 误差反馈同步     

Optimization of fat tree encoder for ultra high speed analog to digital converter using 45 nanometer technology

The design of high speed, compact and low power fat tree encoder circuits using static CMOS gates is presented. In this paper, we propose a modified 3 bit fat tree encoder (FTE) that can operate in high frequency without a sophisticated circuit structure. In addition, the technique of hardware sharing is adopted in this design to reduce the number of transistors. The study uses complementary metal oxide semiconductor (CMOS) 45 nm-technology. The proposed static design has improved delay and power compared to a conventional ROM encoder circuit implementation. The simulation result indicates that it functions successfully and works at 200-MHz speed. The average power consumption of the circuit under room temperature is 20.7 nW. The total core area is 0.011 mm². As expected, the proposed design can be easily integrated in various kind of digital application.     

Heterogeneous integration of GaAs pHEMT and Si CMOS on the same chip

In this work,we demonstrate the technology of wafer-scale transistor-level heterogeneous integration of Ga As pseudomorphic high electron mobility transistors(p HEMTs) and Si complementary metal–oxide semiconductor(CMOS) on the same Silicon substrate.Ga As p HEMTs are vertical stacked at the top of the Si CMOS wafer using a wafer bonding technique,and the best alignment accuracy of 5 μm is obtained.As a circuit example,a wide band Ga As digital controlled switch is fabricated,which features the technologies of a digital control circuit in Si CMOS and a switch circuit in Ga As p HEMT,15% smaller than the area of normal Ga As and Si CMOS circuits.     

Pseudo 2-transistor active pixel sensor using an n-well/gate-tied p-channel metal oxide semiconductor field eeffect transistor-type photodetector with built-in transfer gate

In this paper, a pseudo 2-transistor active pixel sensor (APS) has been designed and fabricated by using an n-well/gate-tied p-channel metal oxide semiconductor field effect transistor (PMOSFET)-type photodetector with built-in transfer gate. The proposed sensor has been fabricated using a 0.35 μm 2-poly 4-metal standard complementary metal oxide semiconductor (CMOS) logic process. The pseudo 2-transistor APS consists of two NMOSFETs and one photodetector which can amplify the generated photocurrent. The area of the pseudo 2-transistor APS is 7.1 × 6.2 μm². The sensitivity of the proposed pixel is 49 lux/(V·s). By using this pixel, a smaller pixel area and a higher level of sensitivity can be realized when compared with a conventional 3-transistor APS which uses a pn junction photodiode.     

高功率微波对PCB电路系统辐照效应的仿真分析

 以实验室自主研发的2维半导体器件-电路联合仿真程序用于分析高功率微波注入下半导体器件的毁伤机理,以此2维半导体器件-电路联合仿真程序为基础加以扩展,添加了电磁波辐照射下微带线的SPICE电路模型。扩展后的程序可以同时用于分析平面波入射下含半导体器件的PCB电路的高功率微波辐照效应和置于带孔缝屏蔽腔中的PCB电路的高功率微波辐照效应。应用此仿真程序分析了一个含有低噪声放大器的简单PCB电路,得到了该PCB电路在不同形式平面波入射下低噪声放大器的烧毁阈值,在该PCB电路置于屏蔽腔中时,低噪声放大器输入端口出现耦合干扰电压情况。     

An Integrated Circuit for Two-Dimensional Edge-Detection with Local Adaptation Based on Retinal Networks

We designed an integrated circuit for edge detection of a two-dimensional image based on the vertebrate outer retina, which has wide dynamic range in image processing. The unit circuit is simple, and operates as a current-mode analog metal-oxide-semiconductor (MOS) circuit. In order to extract edges from an image composed of bright and dark domains, the circuit realizes a function called local adaptation in which the sensitivity adapts to local brightness of the image. Simulation results, using the simulation program with integrated circuit emphasis (SPICE), of two-dimensional Gaussian-distributed images in which the intensity ranged over four orders of magnitude, showed the local adaptation. As a result, the intensity of output images was in the range of one order of magnitude. Furthermore, as the simulation result of real images, it was shown that edges in the dark domain, which was five times darker than the bright domain, were successfully detected as the bright domain in which input photocurrents ranged over two orders of magnitude.     

A Complementary Metal-Oxide-Semiconductor Vision Chip for Edge and Motion Detection with a Function for Output Offset Cancellation

We have designed and fabricated a complementary metal-oxide-semiconductor (CMOS) vision chip by modeling cells of the human retina as hardware that are involved in edge and motion detection. There are several fluctuation factors which affect the characteristics of metal-oxide-semiconductor field effect transistors (MOSFETs) through the CMOS fabrication process and this effect appears as the output offset of the vision chip, which is composed of pixel arrays and readout circuits. The vision chip which detects edge and motion information from an input image is used for the input stage of other systems. Therefore, the output offset of the vision chip determines the efficiency of the entire system. In order to eliminate the offset at the output stage, we designed a vision chip utilizing the correlated double sampling (CDS) technique. The chip has been fabricated using a 0.6 m standard CMOS process. With reliable output characteristics, this chip can be used at the input stage for various applications. © 2005 The Optical Society of Japan     

高压LDMOS晶体管准饱和效应分析与建模

研究了高压LDMOS（lateral double-diffused MOS）晶体管中一种特殊的电流饱和现象——准饱和效应.借助于TCAD模拟工具,澄清了准饱和效应的物理机理是漂移区载流子的速度饱和.进而从本征漏极电压V_k入手,给出了描述LDMOS管电流饱和特性的数学模型.该模型已经通过了Matlab的编程验证,兼具准确性、计算速度和可扩展性等优点,并可进一步应用于SPICE电路模拟. 关键词： LDMOS 准饱和效应 高压     

Step-by-step implementation of an amplifier circuit with a graphene field-effect transistor on a printed-circuit board

Power amplifier circuits are implemented with graphene field-effect transistors (FETs), capacitors and inductors, and their gain is improved step-by-step by adjusting the passive components. The transistors are fabricated on a 150-mm wafer using conventional complementary-metal-oxide semiconductor processing along with graphene transferring processes. The completed circuit is implemented on a printed circuit board, which allows for adjustment of the external capacitance and inductance to study the performance of graphene RF FETs. A maximum signal gain of 1.3 dB is achieved at 380 MHz. The device parameters of the transistors are then extracted and the gain is analyzed, and the results show that lowering the source–drain conductance and gate resistance is the key in realizing high performance circuits.     

Circuit model for analysis of SOA-based photonic switch

This paper presents an equivalent lumped element electric circuit model for traveling wave semiconductor optical amplifier (SOA) in integrated circuit applications. The model facilitates incorporation of chip and package parasitic elements of SOA. The model is used to represent an all optical 2 × 2 switch based on cross gain modulation in SOA capable of operating at an ultra fast speed. SPICE simulation of the switch with the proposed circuit model provides bit error rate (BER) values at the switch output which agrees well with the experimentally measured values at 10 Gb/s. The degradation of switching performance has been examined in terms of bit error rate, modulation bandwidth and switching time in the presence of chip parasitic elements of SOA.     

Sub-THz radiation room temperature sensitivity of long-channel silicon field effect transistors

Room temperature operating n-MOSFETs (n-type metal-oxide silicon field effect transistors) used for registration of sub-THz (sub-terahertz) radiation in the frequency range ν = 53−145 GHz are considered. n-MOSFETs were manufactured by 1-μm Si CMOS technology applied to epitaxial Si-layers (d ≈15 μm) deposited on thick Si substrates (d = 640 μm). It was shown that for transistors with the channel width to length ratio W/L = 20/3 μm without any special antennas used for radiation input, the noise equivalent power (NEP) for radiation frequency ν ≈76 GHz can reach NEP ∼6×10⁻¹⁰ W/Hz^1/2. With estimated frequency dependent antenna effective area S_est for contact wires considered as antennas, the estimated possible noise equivalent power NEP_pos for n-MOSFET structures themselves can be from ∼15 to ∼10³ times better in the specral range of ν ∼55–78 GHz reaching NEP_pos ≈10⁻¹² W/Hz^1/2.