Tuning characteristics of a uv preionized 20-atmospheres CO2 laser

The tuning characteristics of a uv preionized 20-atmospheres gas discharge CO₂ laser with a novel and simple preionization scheme have been investigated. Continuous tunability in all branches of the 9.4 m and 10.4 m band with a total tuning range of more than 60 cm^–1 without frequency pulling is demonstrated. Additionally, a study of the laser pulse behaviour was performed.     

High-power source of coherent picosecond light pulses tunable from 0.41 to 12.9 μm

We report a high-power source of coherent picosecond light pulses based on optical parametric generation and amplification in LiB₃O₅ and AgGaS₂ crystals. The spectral range of this continuously tunable source covers the visible, near-infrared and medium-infrared spectrum from 0.41 to 12.9 m. An optical parametric generator and amplifier, consisting of two type-I phase-matched LiB₃O₅ crystals and a diffraction grating, is pumped by the third harmonic of a picosecond Nd:YAG laser and provides spectrally narrow, high-power pulses from 0.41 to 2.4 m. Energy conversion efficiencies up to 16 percent are achieved. The pulse duration is about 14 ps, the bandwidth between 10 and 30 cm^–1. The tuning range is extended to 12.9 m by mixing the infrared output between 1.16 and 2.13 m with the fundamental of the Nd:YAG laser in type-I-phase-matched AgGaS₂ crystals. Up to 25 percent of the pulse energy at 1.064 m is converted into parametric infrared pulses. Bandwidths between 3 and 8 cm^–1 and a pulse duration of approximately 19 ps are measured for these pulses. We also observe a retracing behaviour in the tuning curve of AgGaS₂ not reported before.     

Role of Activator and Vacancy Centers in the Decay of the Gamma Scintillators of CsI–Na Crystals

The influence of the concentration of an activator (C _NaI) and of plastic deformation on a change in the contribution of a slow component to the decay of the -scintillations of CsI–Na crystals was investigated, as well as the influence of C _NaI on a change in the shape of the luminescence excitation spectrum in the region of absorption of activator centers (AC) and of vacancy-related centers (VRC) and also on a change in the intercenter time of deexcitation of the centers indicated. It is shown that AC and VRC participate in the photoluminescence and -scintillations of CsI–Na crystals. In the -scintillations, AC are responsible for the component ₁ = 370 nsec, whereas the components ₁ = 460 nsec and ₂ 2 sec are associated with VRC. The reduction of ₁ from 770 to 560 nsec with an increase in C _NaI from 2·10^–3 to 3·10^–2 mole% and from 570 to 470 nsec after plastic deformation of the crystals ( = 5%) along the 111 axis is caused by a decrease in the number of VRC. The mechanisms underlying the -scintillations of the CaI–Na crystals containing AC and VRC and also the decrease in the number of VRC are discussed.     

The effect of low-temperature electron irradiation on the transition temperature of YBa2Cu3O7−δ superconductors

Measurements of the complex susceptibility =–i of electron-irradiated YBa₂Cu₃O_7– show a strong influence of the electron irradiation dose, ·t on the transition temperatureT _c . For irradiation doses of ·t=2.2·10¹⁹ e^–/cm² we find a damage rate of T _c /(·t)=–1.6·10^–19 K/(e^–/cm²). It is assumed that the decrease ofT _c is mainly a bulk effect due to the production of atomic defects like vacancies and interstitials in the Cu–O–Cu chains and in the basal planes of the unit cells.     

Positron mobility in anthracene

We have measured the positron mobility in a sample of scintillation grade anthracene at two temperatures. We obtain at 300 K: =(26.0±0.9±2.6) cm²V^–1s^–1 and at 77 K: =(33.4±1.1±3.3) cm²V^–1s^–1, where the first error estimate is statistical and the second is systematic. We have also made preliminary measurements on a highly purified sample that yields =(130±3±20) cm² V^–1 s^–1 at 300 K. The data are consistent with the hypothesis that the positron is scattered from both impurities and acoustic phonons in the first sample, and predominantly from photons in the second. It appears that positrons in pure anthracene crystals are delocalized and have a mean free path of about 85 Å at room temperature.     

Electrical resistivity and thermoelectric power of amorphous niobium-nickel alloys synthetized by vapour quenching

Thin film samples (10–20 thick) of niobium-nickel alloys in the composition range Nb-5 to 95 at % Ni were vapour quenched by R. F. sputtering onto fused quartz substrates held at a temperature of 450 K. It was found that fully glassy alloys were synthetized in the composition range Nb-30 to 85 at % Ni, 2·5 times larger than reported for splat-quenched alloys. Crystallization temperatures exhibited maxima near the eutectic composition and are comparable to those of splat-quenched materials. At room temperature, the electrical resistivity of these alloys lies between 176–210 cm, and the absolute thermoelectric power S between 2·20–2·52 V/K. On increasing the temperature from 4·2 to 775 K, up to which the amorphous alloys are stable, the resistivity of the alloy with=0·50 decreases by about 1·5%; the value of d/dT progressively increases with increasing Ni content, becoming positive at 0·50dS/dT of all alloys lies between 6–8·5×10^–3V deg^–2. The electrical behaviour of these alloys may be treated in terms of electron scattering in disordered structures assuming the nearly free-electron model, in a manner analogous to Ziman's theory of electronic transport in liquid metals.     

Muon-pair formation in the collision of polarized hadrons

The angular dependence of the differential cross section of muon-pair formation in hadron-hadron collisions a₁+a₂+^–+X is investigated in general form, attention being directed mainly toward those contributions to the differential cross section which are determined by the vector polarization of the incident hadron a₁. The specific mechanism of processes a₁ + a₂ ⁺ + ^– +X is not given in detail here, but use is made of such general properties as the conservation of electromagnetic hadron current and the invariance of the electromagnetic interaction of hadrons with respect to spatial reflections.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 88–91, July, 1982.     

Properties of MOS-structures based on anode-oxidized CdSnAs2

The properties of metal (Al, Au)-anodic oxide-CdSnAs₂ monocrystal structures are studied. It is established that MOS-structures using undoped CdSnAs₂ crystals show a high positive fixed charge in the anodic oxide (N_S 5·10¹² cm^–2) and high surface state density on the oxide-CdSnAs₂ boundary surface (N_SS 2·10¹³ cm^–2·eV^–1). In MOS-structures using diffusion-doped (copper) crystals the sign of the fixed charge is negative (N_S 10¹¹ cm^–2, N_SS 2·10¹² cm^–2·eV^–1). The latter structures show a definite photosensitivity and photomemory. The possibility of effective control of the fixed charge value within the oxide by illumination is shown. The surface state distribution over energy, time constant, and capture section is determined.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 90–93, September, 1982.     

The optical absorption of hydroxyl ions associated with divalent calcium in NaCl

The measurements confirmed the association of Ca²⁺ and OH^– in NaCl: CaCl₂ + NaOH, which causes an increase and a shift +0·031 of the OH^– absorption at 2·8, the extinction of the OH^– UV-absorption at 184 nm and the occurrence of new absorption bands between 160 and 210 nm.The measurements were performed at the II. Physikalisches Institut of the University of Stuttgart.     

Micro-Raman spectroscopy in polycrystalline CuInSe2 formation

The crystalline formation of CuInSe₂ thin films has been investigated using micro-Raman spectroscopy and AES composition analysis. It is confirmed that the Raman peaks are stongly dependent on the surface morphology and the Cu:In:Se ratio. In the films annealed at 315°C, crystalline grains larger than 2 m show Raman peaks at 174 cm^–1 and 258 cm^–1. The In content is very low and the Cu:Se ratio is about 1:1 in these grains. The low In concentration is thought to be due to the formation of In₂O₃ on the surface. On the other hand, random structures of 1–2 m grains found in films annealed at temperatures below 305°C show peaks at 174 cm^–1 and 186 cm^–1 instead of 258 cm^–1 and have a Cu:In:Se ratio of 1:1:3–4. Thus the 186 cm^–1 peak is thought to be related to a Cu, In-deficient phase when compared to stoichiometric CuInSe₂. The optimum annealing condition was found by analyzing the Raman spectra and composition of different crystalline CuInSe₂ grains. Films annealed under this condition exhibited a clear Raman peak at 174 cm^–1 and consisted of clusters of crystals less than 1 m in size.     

Towards slow μ− production via muon catalyzed fusion

Slow ^– production via dd-CF using a two-layer arrangement is investigated. To determine its feasibility, experimental measurements are now in progress using the muonic X-ray detection method. The following experimental steps are being considered: (1) measurement of the number of ^– stopped inside a solid H₂/D₂ layer by detecting p K X-rays, (2) hot d emission detection by placing a secondary target at a distance of 10–30 mm from the layer and by detecting specific delayed X-rays, (3) measurement of the disappearance of d emission as the added D₂ layer is increased, (4) dd-CF measurement by detecting fusion protons, and (5) slow ^– emission detection. Results of the initial test experiment are presented.     

The vibration spectra of sodium chloride doped with Na2CO3 and NaOH

The paper investigates absorption and reflection spectra, in the infra-red region from 2 to 25, of single crystals of sodium chloride (NaCl) doped with 0·1 to 1% mol. of Na₂CO₃ and NaOH. A correlation between the absorption bands and the corresponding groups CO ₃ ^2– and OH^– was found. It was also shown that in crystals pulled in air by the Kyropoulus method from a melt doped with NaOH the latter is practically completely transformed into Na₂CO₃.The work was carried out at the suggestion of Dr. A. Bohun, whom the author thanks for valuable discussions.     

Optical constants of thin CoSi2 films on silicon

The optical transmission of CoSi₂ films of thickness 2.6–15 nm is measured in the wavelength range 1–20 m. The optical constants are evaluated by taking into account multiple reflections in the film and by fitting a Drude model. The plasma frequency _p=5.4–7.6 eV is equivalent to a carrier density n _eff=3×10²² cm^–3 and one carrier per unit cell. The relaxation frequency of the plasma resonance assumes high values =2 eV near the interface to silicon and decreases into the bulk film over several nanometers. Films grown off-axis from the (111) Si orientation exhibit an enhanced relaxation frequency.     

Spectroscopic, Phototropic, and Lasing Properties of Cd1−x Mn x Te Single Crystals Doped With Chromium Ions

The spectroscopic properties of Cr²⁺ ions in Cr:Cd_1–x Mn _x Te (CMT) crystals are studied, and the possibility of using these impurity crystals as active media and saturable absorbers of solidstate lasers of medium IR range is demonstrated. The bands of absorption with a maximum at 1.9 m and of luminescence with a maximum at 2.6 m correspond to the transitions between the levels ⁵ T ₂ and ⁵ E of the tetracoordinated Cr²⁺ ions with more than 1·10^–18cm² cross sections. The pulsed and continuous lasing modes of a Cr:CMT laser are realized in the 2.6m region. The Cr:CMT crystals are characterized by effective saturation of impurity absorption. The cross sections of absorption from the ground and excited states of the Cr²⁺ ions at = 2.09 m are determined: _gsa = 1.1·10^–18 cm²; _esa/_gsa < 0.1. With the use of the Cr:CMT crystals as a passive gate the regime of Qswitching of the Cr,Tm,Ho:YAG laser emitting at = 2.09 m is obtained.     

A μSR study of spin density wave condensation in Cr85Mo15

Zero field SR spectra from Cr₈₅Mo₁₅ are well described by the sum of a lightly damped (0.02s^–1<₁<0.2s^–1) and a heavily damped (2s^–1<₂<15s^–1) exponential. The temperature dependence of these components is discussed in relation to the condensation of the incommensurate spin density wave and the onset of the antiferromagnetic state in this Cr-like alloy below T_N=120K. Evidence is presented for the nucleation of the spin density wave at temperatures greater than 1.5T_N.     

Preparation and basic physical properties of BiTeI single crystals

A modified Bridgman method is described, which makes it possible to prepare homogeneous BiTeI crystals using excess iodine. At room temperature the values of the electrical conductivity of the crystals range around 2000 ^–1 cm^–1, the Hall constant value about 0·09 cm^–3 coul^–1, the Seebeck coefficient about 50 V K^–1. In connection with the assumption of super-stoichiometric iodine content we expect there exist point defects in the crystals, where Te atoms are replaced with I atoms, which gives rise to electric conductivity. On the basis of the temperature dependence of the electron mobility one can suppose a mixed mechanism of the scattering of the free carriers by the acoustic branch of lattice vibrations and by ionized impurities.     

Electrical and optical properties and stabilization of the Fermi level in GaP crystals irradiated by electrons and H+ ions

Electrical and optical properties and Fermi level stabilization are studied in GaP crystals irradiated by electrons (E2.2 MeV, D1·10¹⁹ cm^–2) and H⁺ ions (E5 MeV, D1.7·10¹⁶ cm^–2). It is shown that the limiting position of the Fermi level (F_limE_G/2±0.2 eV) is independent of the initial GaP parameters and the type of bombarding particle, but is determined by the condition of local neutrality of the defective GaP. Resistivity values for the irradiated specimens of _max(D)1·10¹³ ·cm were obtained at 300 K. At maximum integral particle fluxes a decrease in crystal resistivity to (3–6)·10⁹ ·cm was observed. The readjustment of GaP absorption spectra in the region hvE_G upon irradiation is related to recharging of gap states by radiation defects upon motion of the Fermi level toward F_lim.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 12, pp. 37–42, December, 1994.     

Electric and tensoelectric study of radiation defects in GaAs

The electric and tensoelectric properties are studied for GaAs crystals which have been irradiated by electrons (2.3 Mev) at 300°K with integrated fluxes of up to 2·10¹⁵ –1·10¹⁹ cm^–2. On the basis of the electrical neutrality equation, including seven energy levels (E1–E5, H0, H1) of the radiation defects, the specific resistivity and the strain sensitivity coefficient are quantitatively analyzed as a function of exposure. The pressure coefficients for the E1–E5 levels with respect to the _c ⁶ point are determined to be (0, 9.6, 11.0, 11.6, 11.6)·10^–6 eV/bar, respectively, at 300°K.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 81–87, October, 1986.     

Gas formation in liquid in initial stages of a pulsed discharge

Gas formation in electrolytes with=10^–2–10^–4–1cm^–1, distilled water = 10^–5-1.5 ·10^{–6 –1}cm^–1, and chemically pure n-hexane in the initial stages of formation of discharge with rectangular voltage pulses of 0.67 and 1.85 sec duration is investigated. The experimental results are compared with the results of approximate calculations.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii Fizika, No. 11, pp. 42–47, November, 1972.The authors thank V. V. Ryumin for taking part in the discussion of the results and V. V. Lopatin for participation in the experiments with electron-optical light amplifier.