γ石墨炔衍生物结构稳定性和电子结构的第一性原理研究

通过基于密度泛函理论的第一原理计算,系统研究了γ石墨炔衍生物的结构稳定性、原子构型和电子性质.γ石墨炔衍生物的结构是由碳六元环以及连接六元环间的碳链组成,碳链上的碳原子数为N=1—6.研究结果表明,碳链上碳原子数的奇偶性对γ石墨炔衍生物的结构稳定和相应的原子构型、电子结构性质具有很大的影响.其奇偶性规律为:当六元环间的碳原子数为奇数时,体系中的碳链均为双键排布,系统呈现金属性;当六元环间的碳原子数为偶数时,系统中的碳链形式为单、三键交替排列,体系为直接带隙的半导体.直接带隙的存在能够促进光电能的高效转换,预示着石墨炔在光电子器件中的应用优势.N=2,4,6的带隙分布在0.94—0.84 eV之间,带隙的大小与碳链上三键的数量和长度有关.研究表明,将碳原子链引入到石墨烯碳六元环之间,通过控制引入的碳原子个数可以调控其金属和半导体电子特性,为设计和制备基于碳原子的可调控s-p杂化的二维材料和纳米电子器件提供了理论依据.     

T型石墨烯及其衍生物的结构与电子特性

采用基于密度泛函理论的第一原理方法研究了T型石墨烯及其衍生物-n(n=1—5)的结构稳定性和电子结构性质.T型石墨烯是一种拥有四角形环的二维碳材料同素异构体,通过改变连接四角形环的碳链上的碳原子个数n,可以得到一系列的sp-sp~2杂化结构,称其为T型石墨烯衍生物-n.计算结果表明:这些材料的结构稳定性、化学键类型和电子结构性质都依存于n的奇偶性.其中T型石墨烯(n=0)的结构最稳定,并形成一个由8个碳原子构成的大环.声子谱计算的结果表明,n为偶数时的体系具有动力学稳定性,而n为奇数时的体系则是不稳定的.n为偶数时体系四角形环之间的碳链上的化学键呈单、三键交叉排列,体系显示为金属性特征,且随着n的增大,体系的金属性加强.n为奇数时体系四角形环之间的碳链上的化学键则为双键连续排列,体系呈金属性且具有磁性(n=1除外).研究表明该系列材料作为一种新的二维碳材料同素异构体,具有独特的结构和丰富的电子结构特性,很可能在纳米器件中得到广泛应用.     

单空位缺陷对石墨纳米带电子结构和输运性质的影响

基于第一性原理电子结构和输运性质计算,研究了单空位缺陷对单层石墨纳米带(包括zigzag型和armchair型带)电子性质的影响.研究发现,单空位缺陷使石墨纳米带在费米面上出现一平直的缺陷态能带;单空位缺陷的引入使zigzag型半导体性的石墨纳米带变为金属性,这在能带工程中有重要的应用价值;奇数宽度的armchair型石墨纳米带表现出金属特性,有着很好的导电性能,同时,偶数宽度的armchair型石墨带虽有金属性的能带结构,但却有类似半导体的伏安特性;单空位缺陷使得奇数宽度的armchair石墨纳米带导电 关键词： 石墨纳米带 单空位缺陷 电子结构 输运性质     

石墨烯纳米片电子结构和量子输运特性第一原理研究

用基于密度泛函理论的原子紧束缚方法计算研究单层石墨烯纳米圆片和纳米带的电子结构,并结合第一原理和非平衡函数法计算量子输运特性.通过电子能态和轨道密度分布研究纳米碳原子层的电子成键状态,结合电子透射谱、电导和电子势分布分析电子散射与输运机制.石墨烯纳米带和纳米圆片分别呈现金属和半导体的能带特征,片层边缘上电极化分别沿垂直和切向方向,电子电导出现较大的差异,来源于石墨烯纳米圆片边缘的突出碳原子环对电子的强散射.石墨烯纳米带的电子透射谱表现为近似台阶式变化并在费米能级处存在弹道电导峰,而石墨烯纳米圆片的电子能带和透射谱在费米能级处开口并且因量子限制作用呈现更加离散的多条高态密度窄能带和尖锐谱峰.     

N掺杂对α-石墨炔表面吸附H_2O,H,O和OH的电子性质和磁性的影响

石墨炔是一种新型的二维(2D)碳的同素异形体,炔键单元的高活性使其在小分子吸附方面相比石墨烯更具优势.本文基于密度泛函理论(DFT),研究了H_2O和H、O及OH分别在原始的和掺杂了N原子的α-石墨炔上的相互作用.研究结果表明,N掺杂和小分子吸附能够改变α-石墨炔的电子结构和磁性. N原子掺杂后α-石墨炔对小分子的吸附能力明显增强. H、O原子和OH吸附在N原子掺杂体系前后表现出明显的磁性差异:H原子和OH吸附在纯净的α-石墨炔上体系显示磁性,N原子掺杂后,磁性消失;而O原子则是吸附在纯净的α-石墨炔上未表现出磁性,N原子掺杂后,体系出现磁性.此外,α-石墨炔对水分子的吸附作用较弱,受范德瓦耳斯作用影响较大,属于物理吸附.本研究将为α-石墨炔中N杂质检测以及α-石墨炔基气体传感器的设计研究提供新的思路.     

锂改性点缺陷石墨烯储氢性能的第一性原理研究

本研究采用基于密度泛函理论的第一性原理方法计算了两种石墨烯点缺陷处原子的分波态密度(PDOS),能带结构和差分电荷密度等,研究了锂掺杂对两种本征石墨烯缺陷C-Bridge和C7557电子结构的改性,以及对其储氢能力的影响.结果表明Li原子能够稳定的掺杂且不易形成团簇,并且Li原子掺杂石墨烯能够对石墨烯能带中的狄拉克锥和费米面起到调控作用,增强了缺陷石墨烯的电子活性.本征缺陷石墨烯的储氢能力较弱,缺陷石墨烯的储氢能力可以通过Li掺杂来改善.     

B/N掺杂对双层石墨烯电子特性影响的第一性原理研究

利用平面波超软赝势方法研究了B/N原子单掺杂和共掺杂对双层石墨烯电子特性的影响.对掺杂双层石墨烯进行结构优化,并计算了能带结构、态密度、分波态密度等.分析表明,层间范德瓦尔斯相互作用对双层石墨烯的电子特性有比较明显的影响;B/N原子单掺杂分别对应p型和n型掺杂,会使掺杂片层的能带平移,使得体系能带结构产生较大分裂;双层掺杂的石墨烯能带结构与掺杂原子的相对位置和距离有关,对电子特性有明显的调控作用.其中特别有意义的是,B/N双层共掺杂在不同位置情况下会得到金属性或禁带宽度约为0.3 eV的半导体能带.     

氮原子修饰点缺陷石墨烯结构和性质的理论研究

氮原子掺杂石墨烯对基于石墨烯的器件和催化研究具有重要的应用价值.本文采用基于密度泛函理论的计算方法,研究了氮原子修饰的C-Bridge(碳原子吸附在石墨烯碳碳键桥位)、C-Top(碳原子吸附在石墨烯一个碳原子上方)和C7557(碳原子对吸附在石墨烯碳环上方)三种不同点缺陷类型的石墨烯物理性质.讨论不同缺陷石墨烯结构在用氮原子进行修饰前后体系的稳定性、电子结构等;计算得到了缺陷处原子的分波态密度(PDOS)图,分析了原子间的相互作用;模拟出氮原子修饰后缺陷石墨烯恒流模式的STM图像,以便和实验上得出的图像进行对比.计算结果表明,对于所选取的三种不同缺陷,氮原子能够较稳定地吸附在缺陷表面.C-Bridge和C-Top缺陷结构本身具有磁矩,经氮原子修饰后结构磁矩消失.与之相反,C7557缺陷结构本身没有磁矩,经氮原子修饰后缺陷体系带有磁矩.另外,C-Bridge和CTop两种不同缺陷结构石墨烯经过氮原子修饰后,体系几何结构变得完全一样.     

α-碳锗炔稳定性及性质模拟

采用以量子力学为基础的半经验计算方法—–自洽和环境依赖的原子轨道线性理论,预测了类α-石墨炔的碳锗炔结构.研究了α-碳锗炔的稳定结构、电子结构以及热力学稳定性,得到其最稳定的构型是Ge原子在六元环的六个顶角处,晶格常数为8.686?的六角原胞构成的单层平面蜂窝状结构.该结构是带隙为1.078 e V的半导体.α-碳锗炔在很高的温度下都可以保持稳定,直到2280 K时其长程有序态才被破坏,当体系低于此温度时,可以通过降温使其恢复到零温时的稳定平面结构.     

$lt;i$gt;α$lt;/i$gt;-碳锗炔稳定性及性质模拟

采用以量子力学为基础的半经验计算方法–自洽和环境依赖的原子轨道线性理论,预测了类α-石墨炔的碳锗炔结构. 研究了α-碳锗炔的稳定结构、电子结构以及热力学稳定性,得到其最稳定的构型是Ge原子在六元环的六个顶角处,晶格常数为8.686 Å的六角原胞构成的单层平面蜂窝状结构. 该结构是带隙为1.078 eV的半导体. α-碳锗炔在很高的温度下都可以保持稳定,直到2280 K时其长程有序态才被破坏,当体系低于此温度时,可以通过降温使其恢复到零温时的稳定平面结构. 关键词： α-石墨炔')" href="#">α-石墨炔 α-碳锗炔')" href="#">α-碳锗炔 分子动力学模拟 热稳定性     

Density functional study of α-graphyne derivatives: Energetic stability,atomic and electronic structure

The energetic stability, atomic and electronic structures of α-graphyne and its derivatives (α-GYs) with extended carbon chains were investigated by density functional (DF) calculations in this work. The studied α-GYs consist of hexagon carbon rings sharing their edges with carbon atoms N=1–10. The structure and energy analyses show that α-GYs with even-numbered carbon chains have alternating single and triple C–C bonds (polyyne), energetically more stable than those with odd-numbered carbon chains possessing continuous double C–C bonds (polycumulene). The calculated electronic structures indicate that α-GYs can be either metallic (odd N) or semiconductive (even N) depending on the parity of number of atoms on hexagon edges despite the edge length. The semiconducting α-graphyne derivatives are found to possess Dirac cones (DC) with small direct band gaps 2–40 meV and large electron velocities 0.554×10⁶–0.671×10⁶ m/s, 70–80% of that of graphene. Our DF studies suggest that introducing sp carbon atoms into the hexagon edges of graphene opens up an avenue to switch between metallic and DC electronic structures via tuning the parity of the number of hexagon edge atoms.     

Study of Transport Properties in Armchair Graphyne Nanoribbons: A Density Functional Approach

In present paper, the non-equilibrium Green function (NEGF) method along with the density functional theory (DFT) are used to investigate the effect of width on transport and electronic properties of armchair graphyne (γ-graphyne) nanoribbons. The results show that all the studied nanoribbons are semiconductor and their band gaps decrease as the widths of nanoribbons increase, which will result in increasing current at a certain voltage. Also our results show the promising application of armchair graphyne nanoribbons in nano-electrical devices.     

First-principles study of graphyne on SiO2

Employing first-principles density-functional calculations, we study the rectangularly symmetric 6,6,12-graphyne deposited on an SiO₂ surface. We show that, on a substrate without H-passivation, the carbon layer (distorted from the planar structure) is covalently bonded to the substrate and, on a substrate with H-passivation, the graphyne (still keeping the planar structure) exhibits a weak van der Waals (vdW) bonding to the underlying structure. But the characteristic spectrum of the free-standing graphyne does not appear in both cases. The results suggest that, even the graphyne in planar geometry, a small planar irregular deformation induces the gap opening at the Dirac points.     

Detection of hydrogen peroxide with graphyne

The effect of hydrogen peroxide on the electronic properties of graphyne has been investigated to explore the possibility of using graphyne based biosensor. We have used density functional theory to study the electronic properties of γ-graphyne in the presence of different number of hydrogen peroxide. The optimal adsorption position, orientation, and distance of hydrogen peroxide adsorbed on the graphyne sheet have been determined by calculating adsorption energy. It is found that γ-graphyne which is an intrinsic semiconductor becomes an n-type semiconductor due to the presence of hydrogen peroxide. The energy band gap of γ-graphyne is decreased by increasing the number of hydrogen peroxide. The results demonstrate that γ-graphyne is a promising candidate for biosensor application because of its electrical sensitivity to hydrogen peroxide.     

Carbon nanoribbons and nanotubes based on δ-graphyne: A first-principles study

As a stable allotropy of two-dimensional (2D) carbon materials, δ-graphyne has been predicted to be superior to graphene in many aspects. Using first-principles calculations, we investigated the electronic properties of carbon nanoribbons (CNRs) and nanotubes (CNTs) formed by δ-graphyne. It is found that the electronic band structures of CNRs depend on the edge structure and the ribbon width. The CNRs with zigzag edges (Z-CNRs) have spin-polarized edge states with ferromagnetic (FM) ordering along each edge and anti-ferromagnetic (AFM) ordering between two edges. The CNRs with armchair edges (A-CNRs), however, are semiconductors with the band gap oscillating with the ribbon width. For the CNTs built by rolling up δ-graphyne with different chirality, the electronic properties are closely related to the chirality of the CNTs. Armchair (n, n) CNTs are metallic while zigzag (n, 0) CNTs are semiconducting or metallic. These interesting properties are quite crucial for applications in δ-graphyne-based nanoscale devices.     

Competition for graphene: graphynes with direction-dependent Dirac cones

The existence of Dirac cones in the band structure of two-dimensional materials accompanied by unprecedented electronic properties is considered to be a unique feature of graphene related to its hexagonal symmetry. Here, we present other two-dimensional carbon materials, graphynes, that also possess Dirac cones according to first-principles electronic structure calculations. One of these materials, 6,6,12-graphyne, does not have hexagonal symmetry and features two self-doped nonequivalent distorted Dirac cones suggesting electronic properties even more amazing than that of graphene.     

Electronic properties of α-graphyne nanoribbons under the electric field effect

In this paper, we investigate the electronic structure of both armchair and zigzag α-graphyne nanoribbons. We use a simple tight binding model to study the variation of the electronic band gap in α-graphyne nanoribbon. The effects of ribbon width, transverse electric field and edge shape on the electronic structure have been studied. Our results show that in the absence of external electric field, zigzag α-graphyne nanoribbons are semimetal and the electronic band gap in armchair α-graphyne nanoribbon oscillates and decreases with ribbon's width. By applying an external electric field the band gap in the electronic structure of zigzag α-graphyne nanoribbon opens and oscillates with ribbon width and electric field magnitude. Also the band gap of armchair α-graphyne nanoribbon decreases in low electric field, but it has an oscillatory growth behavior for high strength of external electric field.     

Energetic and electronic structure of BC2N compounds

The stability and electronic structure of BC2N compounds are studied using first-principle calculations. The investigated structures have the topology of graphite layers with either carbon, nitrogen or boron atoms at each site. The calculations show that stabler structures are obtained by increasing the number of C-C and B-N bonds. On the other hand, less stable structures result from increasing the number of N-N and B-B bonds. The energy gap of the stablest compounds varies from 0.0 to 1.62 eV, depending on the distribution of B, C, and N atoms in the unit cell. The electronic properties of BC2N layered materials strongly depend on their atomic arrangements. The observed changes in energy gaps do not simply follow a symmetry-based argument proposed earlier.     

Tuning the energy gap of bilayer α-graphyne by applying strain and electric field

Our density functional theory calculations show that the energy gap of bilayer α-graphyne can be modulated by a vertically applied electric field and interlayer strain. Like bilayer graphene, the bilayer α-graphyne has electronic properties that are hardly changed under purely mechanical strain, while an external electric field can open the gap up to 120 meV. It is of special interest that compressive strain can further enlarge the field induced gap up to 160 meV, while tensile strain reduces the gap. We attribute the gap variation to the novel interlayer charge redistribution between bilayer α-graphynes.These findings shed light on the modulation of Dirac cone structures and potential applications of graphyne in mechanicalelectric devices.