Leed,aes and photoemission measurements of epitaxially grown GaAs(001), (111)A and (1̄1̄1̄)B surfaces and their behaviour upon cs adsorption

Epitaxially grown GaAs(001), (111) and (1?1?1?) surfaces and their behaviour on Cs adsorption are studied by LEED, AES and photoemission. Upon heat treatment the clean GaAs(001) surface shows all the structures of the As-stabilized to the Ga-stabilized surface. By careful annealing it is also possible to obtain the As-stabilized surface from the Ga-stabilized surface, which must be due to the diffusion of As from the bulk to the surface. The As-stabilized surface can be recovered from the Ga-stabilized surface by treating the surface at 400°C in an AsH₃ atmosphere. The Cs coverage of all these surfaces is linear with the dosage and shows a sharp breakpoint at 5.3 × 10¹⁴ atoms cm^?2. The photoemission reaches a maximum precisely at the dosage of this break point for the GaAs(001) and GaAs(1?1?1?) surface, whereas for the GaAs(111) surface the maximum in the photoemission is reached at a higher dosage of 6.5 × 10¹⁴ atoms cm^?2. The maximum photoemission from all surfaces is in the order of 50μA Im^?1 for white light (T = 2850 K). LEED measurements show that Cs adsorbs as an amorphous layer on these surfaces at room temperature. Heat treatment of the Cs-activated GaAs (001) surface shows a stability region of 4.7 × 10¹⁴ atoms cm^?2 at 260dgC and one of 2.7 × 10¹⁴ atoms cm^?2 at 340°C without any ordering of the Cs atoms. Heat treatment of the Cs-activated GaAs(111) crystal shows a gradual desorption of Cs up to a coverage of 1 × 10¹⁴ atoms cm^?2, which is stable at 360°C and where LEED shows the formation of the GaAs(111) (√7 × √7)Cs structure. Heat treatment of the Cs-activated GaAs(1?1?1?) crystal shows a stability region at 260°C with a coverage of 3.8 × 10¹⁴ atoms cm^?2 with ordering of the Cs atoms in a GaAs(1?1?1?) (4 × 4)Cs structure and at 340°C a further stability region with a coverage of 1 × 10¹⁴ at cm^?2 with the formation of a GaAs(1?1?1?) (√21 × √21)Cs structure. Possible models of the GaAs(1?1?1?) (4 × 4)Cs, GaAs(1?1?1?)(√21 × √21)Cs and GaAs(111) (√7 × √7)Cs structures are given.     

Surface diffusion of lead on tungsten

Field electron microscopy is used to study the surface diffusion of lead on tungsten. A simple method to measure rough values of the diffusion coefficient and its dependence on sub-monolayer coverage is described and tested. In the region around (001) the displacement energy found is about 1.30 eV/atom up to 10¹⁵ atoms/cm² where it decreases to 0.78 eV/atom. In the residual region except (110) this energy at 1.5×10¹⁴ atoms/cm² is 1.22 eV/atom, it decreases at 4 × 10¹⁴ atoms/cm² to 0.61 eV/atom and increases at 10¹⁵ atoms/cm² to 0.78 eV/atom. Corresponding values of the diffusion coefficient D and of the preexponential D₀ are given. The dependence of D on submonolayer coverage is discussed.     

Ionic transport in the lithium nitride bromides,Li6NBr3 and Li1 3N4Br

The ionic and electronic conductivities of the lithium nitride bromides Li₆NBr₃ and Li_{1 3}N₄Br have been studied in the temperature range from 50 to 220°C and 120 to 450°C, respectively. Both compounds are practically pure lithium ion conductors with negligible electronic contribution. Li₆NBr₃ has an ionic conductivity Ω of 2 × 10^-6Ω^-1cm^-1 at 100°C and an activation enthalpy for σT of 0.46 eV. Li_{1 3}N₄Br shows a phase transition at about 230°C. The activation enthalpy for σT is 0.73 eV below and 0.47 eV above this temperature. The conductivities at 150 and 300°C were found to be 3.5 × 10^-6 Ω^-1cm^-1 and 1.4 × 10^-3Ω^-1cm^-1, respectively. The crystal structure is hexagonal at room temperature with $\text{a = 7.415 (1)}\text{A}\text{?}$ and $\text{c = 3.865 (1)}\text{A}\text{?}$.     

Displacive surface phases formed by hydrogen chemisorption on W {001}

A detailed LEED study is reported of the surface phases stabilised by hydrogen chemisorption on W {001}, over the temperature range 170 to 400 K, correlated with absolute determinations of surface coverages and sticking probabilities. The saturation coverage at 300 K is 19(± 3) × 10¹⁴ atoms cm^?2, corresponding to a surface stoichiometry of WH₂, and the initial sticking probability for both H₂ and D₂ is 0.60 ± 0.03, independent of substrate temperature down to 170 K. Over the range 170 to 300 K six coverage-dependent temperature-independent phases are identified, and the transition coverages determined. As with the clean surface $\text{(}\text{2}\text{×}\text{2}\text{)R45°}$ displacive phase, the c(2 × 2)-H phase is inhibited by the presence of steps and impurities over large distances (～20 Å), again strongly indicative of CDW-PLD mechanisms for the formation of the H-stabilised phases. These phases are significantly more temperature stable than the clean $\text{(}\text{2}\text{×}\text{2}\text{)R45°}$, the most stable being a c(2 × 2)-H split half-order phase which is formed at domain stoichiometries between WH_0.3 and WH_0.5. LEED symmetry analysis, the dependence of half-order intensity and half-width on coverage, and I-V spectra indicate that the c(2 × 2)-H phase is a different displacive structure from that determined by Debe and King for the clean $\text{(}\text{2}\text{×}\text{2}\text{)R45°}$. LEED I-V spectra are consistent with an expansion of the surface-bulk interlayer spacing from 1.48 to 1.51 Å as the hydrogen coverage increases to ～4 × 10¹⁴ atoms cm^?2. The transition from the split half-order to a streaked half-order phase is found to be correlated with changes in a range of other physical properties previously reported for this system. As the surface stoichiometry increases from WH to WH₂ a gradual transition occurs between a phase devoid of long-range order to well-ordered (1 × 1)-H. Displacive structures are proposed for the various phases formed, based on the hypothesis that at any coverage the most stable phase is determined by the gain in stability produced by a combination of chemical bonding to form a local surface complex and electron-phonon coupling to produce a periodic lattice distortion. The sequence of commensurate, incommensurate and disordered structures are consistent with the wealth of data now available for this system. Finally, a simple structural model is suggested for the peak-splitting observed in desorption spectra.     

Amorphous GaP produced by ion implantation

Two types of non-crystalline states (“disordered” and “amorphous”) of GaP were produced by using ion implantation and post annealing. A structural-phase-transition-like annealing behaviour from the “disordered” state to the “amorphous” state was observed.The ion dose dependence and the annealing behaviour of the atomic structure of GaP implanted with 200 keV ? N⁺ ions were studied by using electron diffraction, backscattering and volume change measurements. The electronic structure was also investigated by measuring optical absorption and electrical conductivity.The implanted layer gradually loses the crystalline order with the increase of the nitrogen dose.The optical absorption coefficient α and electric conductivity σ of GaP crystals implanted with 200 keV?N⁺ ions of 1 × 10¹⁶ cm^?2 were expressed as αhν = C(hν ? E₀)ⁿ and log $\text{σ = A ? BT}{}^{\mathrm{<mtext>-</mtext><mtext>1</mtext><mtext>4</mtext>}}$, respectively. Moreover, the volume of the implanted layer increased about three percent and the electron diffraction pattern was diffused halo whose intensity monotonically decreases along the radial direction. These results indicate that the as-implanted layer has neither a long range order nor a short range order (“disordered state”).In the sample implanted at 1 × 10¹⁶ cm^?2, a structural phase-transition-like annealing stage was observed at around 400°C. That is, the optical absorption coefficient α abruptly fell off from 6 × 10⁴ to 7 × 10³ cm^?1 and the volume of the implanted layer decreased about 2% within an increase of less than 10 degrees in the anneal temperature. Moreover, the short range order of the lattice structure appeared in the electron diffraction pattern. According to the backscattering experiment, the heavily implanted GaP was still in the non-crystalline state even after annealing.These facts lead us to believe that heavily implanted GaP, followed by annealing at around 400°C, is in the “amorphous” state, although as-implanted Gap is not in the “amorphous” state but in the “disordered” state.     

Electron beam induced desorption and dissociation of CO chemisorbed on Ir(111)

Election beam induced perturbations of CO chemisorbed on Ir(111) have been measured using LEED and AES. The total interaction cross-section for electron-stimulated desorption and dissociation is found to be 0.8 to 1.7 × 10^?17 cm² near $\text{1}\text{3}$monolayer coverage at a beam energy of 86 eV. This total cross-section is estimated to be 1 × 10^?17 cm² when defined with respect to the primary flux of a 2.5 keV beam. Electron-stimulated dissociation is found to occur at 1–2% of the rate of stimulated desorption.     

The adsorption of acetylene on W(100) at room temperature: An electron spectroscopic study

The adsorption of acetylene on W(100) at room temperature has been studied by AES, ELS, thermal desorption, mass spectrometry, work function and LEED in one vacuum chamber. AES line profile analysis shows that there are at least two adsorption processes occurring at room temperature. Further, it is possible to explain all the AES results by assuming non-sequential adsorption into just two states, denoted by α and β. This picture was substantiated and embellished by comparison with other standard surface techniques. The α-state comprises either a C₂H₂ unit with an activation energy for desorption of $\text{2.3}\text{eV}\text{molecule}\text{(53}\text{kcal mole}{}^{\mathrm{?1}}\text{)}$ or CH units bounded through the carbon of the β-state. Saturation coverage for the α-state is 3 × 10¹⁴ molecules cm^?2. The β-state is dissociative at low acetylene exposures and comparison between a carbon covered surface and the β-state suggest the latter to be dissociative up to saturation. There also appears to be ca. 10¹⁴ hydrogen atoms cm^?2 on W(100) on room temperature acetylene saturation, the carbon content of the β-state being 9 × 10¹⁴ atoms cm^?2. The residual C?C bond from the molecule in the β-state remains unknown. No sign of ordering in the adsorbed species was detected, save the possibility of (1 × 1) in the β-state. Acetylene adsorption at 580 K showed hydrogen from the β-state to block acetylene adsorption by 15% at saturation. A two-site adsorption model for the β-state is proposed to explain the results. The α-state is bonded through the carbon of the β-state and it is speculated that the former adsorbs onto “β” domains where there is a critical minimum size for the latter.     

Absolute coverages of CO and O on Pt(111); Comparison of saturation CO coverages on Pt(100), (110) and (111) surfaces

Nuclear microanalysis (NMA) has been used to determine the absolute coverages of oxygen and CO adsorbed on Pt(111). The saturation oxygen coverage at 300 K is 3.9 ± 0.4 × 10¹⁴ O atoms cm^?2 (θ = 0.26 ± 0.03), confirming the assignment of the LEED pattern as p(2 × 2). The saturation CO coverage at 300 K is 7.4 ± 0.3 × 10¹⁴ CO cm^?2 (θ = 0.49 ± 0.02). The low temperature saturation CO coverages on Pt(100), (110) and (111) surfaces are compared.     

Lithium aluminum nitride,Li3AlN2 as a lithium solid electrolyte

Single phase of Li₃AlN₂ was prepared from the mixture of Li₃N/AlN = 1.2 to 1.5 in molar ratio at 700°C and at 900°C. It crystalizes in the cubic system derived from antifluorite-type structure having the lattice parameter $\text{a = 9.470}\text{A}\text{?}$. It is a pure ionic conductor having conductivity of 5 × 10^?8ω^?1cm^?1 at room temperature and an activation energy of 52 kJ/ mol. Its decomposition voltage was 0.85 V at 104°C. The TiS₂/Li₃AlN₂/Li cell could be discharged at a constant current of 45 μA/cm² at 104°C.     

Adsorption of sulfur dioxide and the interaction of coadsorbed oxygen and sulfur on Pt(111)

The adsorption of sulfur dioxide and the interaction of adsorbed oxygen and sulfur on Pt(111) have been studied using flash desorption mass spectrometry and LEED. The reactivity of adsorbed sulfur towards oxygen depends strongly on the sulfur surface concentration. At a sulfur concentration of 5 × 10¹⁴ S atoms cm^?2 ($\text{(}\text{3}\text{×}\text{3}\text{)R30°}$ structure) oxygen exposures of 5 × 10^?5 Torr s do not result in the adsorption of oxygen nor in the formation of SO₂. At concentrations lower than 3.8 × 10¹⁴ S stoms cm^?2 ((2 × 2) structure) the thermal desorption following oxygen dosing at 320 K yields SO₂ and O₂. With decreasing sulfur concentration the amount of desorbing O₂ increases and that of SO₂ passes a maximum. This indicates that sulfur free surface regions, i.e. holes or defects in the (2 × 2) S structure, are required for the adsorption of oxygen and for the reaction of adsorbed sulfur with oxygen. SO₂ is adsorbed with high sticking probability and can be desorbed nearly completely as SO₂ with desorption maxima occurring at 400, 480 and 580 K. The adsorbed SO₂ is highly sensitive to hydrogen. Small H₂ doses remove most of the oxygen and leave adsorbed sulfur on the surface. After adsorption of SO₂ on an oxygen predosed surface small amounts of SO₃ were desorbed in addition to SO₂ and O₂ during heating. Preadsorbed oxygen produces variations of the SO₂ peak intensities which indicate stabilization of an adsorbed species by coadsorbed oxygen.     

Doping mechanism of a conducting polymer: Iodine-doped polyacetylene

We have achieved a technique for determining the diffusion profiles of impurities in the polymers by using a radio-tracer and a microslicing method. We describe the diffusion profiles of iodine in polyacetylene in the temperature range ?60 +20°C. The results show that: (1) iodine penetrates through the interfibril spaces; (2) there is a simultaneous chemical reaction of the first order on the fibrils between polyacetylene and iodine. When the dopant is in solution in pentane, the liquid state interfibril diffusion obeys the Arrhenius law: D = 1.73 × 10^?3 exp[$\text{?0.122(eV)}\text{kT}$] cm² · sec^?1. The kinetic constant of the reaction obeys the similar equation: k = 0.754 exp[$\text{?0.0867(eV)}\text{kT}$] sec^?1.     

Adsorption of oxygen on Pt(111)

Oxygen adsorbed on Pt(111) has been studied by means of temperature programmed thermal desorption spectroscopy (TPDS). high resolution electron energy loss spectroscopy (EELS) and LEED. At about 100 K oxygen is found to be adsorbed in a molecular form with the axis of the molecule parallel to the surface as a peroxo-like species, that is, the OO bond order is about 1. At saturation coverage (θ_mol= 0.44) a $\text{(}\text{3}\text{2}\text{×}\text{3}\text{2}\text{)R15°}$ diffraction pattern is observed. The sticking probability S at 100 K as a function of coverage passes through a maximum at θ = 0.11 with S = 0.68. The shape of the coverage dependence is characteristic for adsorption in islands. Two coexisting types of adsorbed oxygen molecules with different OO stretching vibrations are distinguished. At higher coverages units with v-OO = 875 cm^?1 are dominant. With decreasing oxygen coverages the concentration of a type with v-OO = 700 cm^?1 is increased. The dissociation energy of the OO bond in the speices with v-OO = 875 cm^?1 is estimated from the frequency shift of the first overtone to be ~ 0.5 eV. When the sample is annealed oxygen partially desorbs at ~ 160K, partially dissociates and orders into a p(2×2) overlayer. Below saturation coverage of molecular oxygen, dissociation takes place already at92 K. Atomically adsorbed oxygen occupies threefold hollow sites, with a fundamental stretching frequency of 480 cm^?1. In the non-fundamental spectrum of atomic oxygen the overtone of the E-type vibration is observed, which is “dipole forbidden” as a fundamental in EELS.     

The interaction of Ag with Si(111)

Deposits of Ag on Si(111), at room temperature, have yielded a linear Auger signal-time characteristic to a gradient break point at (7.6 ± 0.9) × 10¹⁴ atoms ofAg cm^?2, which is very close to the Si surface state density of (8–10) × 10¹⁴ cm^?2, and which supports a Stranski-Krastanov growth mechanism. Analysis of the Auger spectra at the monolayer end point revealed a new peak at 82 ± 1 eV. This peak is believed to arise from an Auger process involving an induced Ag-Si interface state. A model is proposed for this state arising from the chemisorption of Ag on Si.     

Beam transport

Abstract

Dopant distribution, electrical activity and damage annealing of high-dose (～5 × 10¹⁵ cm²) Ga-implanted silicon samples annealed by conventional thermal annealing have been studied by alpha particle back-scattering, differential Hall effect and ellipsometry measurements. Back-scattering spectra show that there is no long tail of Ga atoms in the as-implanted samples. Upon annealing these samples the damaged amorphous layer recrystallizes at about 570°C by solid phase epitaxy. During the epitaxial regrowth the dopant atom distribution seems to be modified. Further, very high levels of electrical activaton of Ga-atoms (～3 × 10²⁰ cm^?3), much higher than the maximum solubility limit of Ga in Si (4.5 × 10¹⁹ cm^?3), is achieved by thermal annealing of the sample at ～570°C. This is comparable to the doping achieved by laser annealing of the Ga implanted Si. All the above three measurements show that there is residual damage in the high dose (?10¹⁵cm^?2) implanted samples after the recrystallization at about 570°C. This may be related to strain in the lattice at the high concentrations of metastable substitutional Ga atoms. Annealing at higher temperature reduces the electrical activity of Ga atoms, possibly by driving out the metastably high substitutional concentrations of Ga-atoms into electrically inactive clusters or precipitates.     

Characterization of silicon doped with sodium upon high-voltage implantation

The depth distribution profiles of sodium atoms in silicon upon high-voltage implantation (ion energy, 300 keV; implantation dose, 5 × 10¹⁴ and 3 × 10¹⁵ cm ^?2) are investigated before and after annealing at temperatures in the range T _ann = 300–900°C (t _ann = 30 min). Ion implantation is performed with the use of a high-resistivity p-Si (ρ= 3–5 kΩ cm) grown by floating-zone melting. After implantation, the depth distribution profiles are characterized by an intense tail attributed to the incorporation of sodium atoms into channels upon their scattering from displaced silicon atoms. At an implantation dose of 3 × 10¹⁵ ions/cm², which is higher than the amorphization threshold of silicon, a segregation peak is observed on the left slope of the diffusion profile in the vicinity of the maximum after annealing at a temperature T _ann = 600°C. At an implantation dose of 5 × 10¹⁴ ions/cm², which is insufficient for silicon amorphization, no similar peak is observed. Annealing at a temperature T _ann = 700°C leads to a shift of the profile toward the surface of the sample. Annealing performed at temperatures T _ann ≥ 800°C results in a considerable loss of sodium atoms due to their diffusion toward the surface of the sample and subsequent evaporation. After annealing, only a small number of implanted atoms that are located far from the region of the most severe damages remain electrically active. It is demonstrated that, owing to the larger distance between the diffusion source and the surface of the sample, the superficial density of electrically active atoms in the diffusion layer upon high-voltage implantation of sodium ions is almost one order of magnitude higher than the corresponding density observed upon low-voltage implantation (50–70 keV). In this case, the volume concentration of donors near the surface of the sample increases by a factor of 5–10. The measured values of the effective diffusion parameters of sodium at annealing temperatures in the range T _ann = 525–900°C are as follows: D ₀ = 0.018 cm²/s and E _a = 1.29 eV/kT. These parameters are almost identical to those previously obtained in the case of low-voltage implantation.     

Influence of nitrogen implantation on thermoluminescence of synthetic quartz

Thermoluminescence (TL) of synthetic quartz exposed to beta irradiation following implantation with 60?keV N⁺ ions at fluences ranging between 1?×?10¹⁴ and 5?×?10¹⁵?ions/cm² is reported. The glow curve measured at 5°C/s typically consists of a prominent peak near 110°C, studied in this work, and minor glow peaks at around 130°C and 190°C. The TL intensity of the main peak increased both with implantation and with fluence of implantation. The dependence of the intensity on heating rate and fluence suggests that the implantation introduces new defects that may possibly act as recombination centres. The increase in TL intensity with the heating rate exhibited by implanted samples has been observed in other luminescence materials. This anti-quenching phenomenon has been described as a competition effect between multiple luminescence pathways in luminescence materials. Kinetic analysis of the main glow peak using the initial rise, various heating rate and glow curve deconvolution methods shows that the activation energy of the main peak is about 0.7?eV with no systematic change due to ion fluence.     

Trapping probabilities and desorption energies of alkali atoms on a clean and an oxygen covered tungsten (110) surface

Alkali atoms were scattered with hyperthermal energies from a clean and an oxygen covered (θ ≈ 0.5 ML) W(110) surface. The trapping probability of K and Na atoms on oxygen covered W(110) has been measured as a function of incoming energy (0–30 eV) and incident angle. A considerable enhancement of trapping on the oxygen covered surface compared to a clean surface was observed. At energies above 25 eV there are still K and Na atoms being trapped by the oxygen covered surface. From the temperature dependence of the mean residence time τ of the initially trapped atoms the pre-exponential factor τ₀ and the desorption energy Q were derived using the relation: $\text{τ = τ}{}_0\text{exp}\text{(}\text{Q}\text{kT}{}_{\mathrm{<mtext>s</mtext>}}\text{)}$. On clean W(110) we obtained for Li: $\text{τ}{}_0\text{= (8 ±}\text{8}\text{4}\text{) × 10}{}^{\mathrm{?14}}\text{sec}$, Q = (2.78 ± 0.09) eV; for Na: τ₀ = (9 ± 3) × 10^?14 sec, Q = (2.55 ± 0.04) eV; and for K: τ₀ = (4 ± 1) × 10^?13 sec, Q = (2.05 ± 0.02) eV. Oxygen covered W(110) gave for Na: τ₀ = (7 ±3) × 10^?15 sec, Q = (2.88 ± 0.05) eV; and for K: $\text{τ}{}_0\text{= (1.3 ±}\text{0.9}\text{0.6}\text{) × 10}{}^{\mathrm{?14}}\text{sec}$, Q = (2.48 ±0.05) eV. The adsorption on clean W(110) has the features of a supermobile two-dimentional gas; on the oxygen covered W(110) adsorbed atoms have the partition function of a one-dimen-sional gas. The binding of the adatoms to the surface has a highly ionic character in the systems of the present experiment. An estimate is given for the screening length of the non-perfect conductor W(110):k_s^?1≈ 0.5 Å.     

Plasma production in a Cs vapor by a weak CW laser beam at 6010 Å

When a dye laser beam at 6010.5 Å (which excites the $\text{Cs 6}{}^2\text{P}{}_{\mathrm{<mtext>1</mtext><mtext>2</mtext>}}\text{→8D}{}_{\mathrm{<mtext>3</mtext><mtext>2</mtext>}}$ transition), of power 0.1 W, is focused into a Cs vapor of density ? 10¹⁷ cm^-3, we observe a bright localized white glow near the laser focus. Our experiments indicate that this glow is due to the production of a Cs plasma, which exhibits many characteristics of a discharge plasma, like emission of numerous atomic lines and of recombination continua, plasma-broadening of atomic lines, and hysterisis. This laser-produced plasma is in Saha equilibrium with a typical electron density of 3 × 10¹⁴ cm^-3, and a typical electron temperature of 0.2 eV.     

Trap characterization for Bi4Ti3O12 thin films by thermally stimulated currents

Thermally stimulated current (TSC) measurements performed in the 100 K–400 K temperature range on Bi₄Ti₃O₁₂ (BiT) thin films annealed at 550 °C and 700 °C had revealed two trapping levels having activation energies of 0.55 eV and 0.6 eV. The total trap concentration was estimated at 10¹⁵ cm⁻³ for the samples annealed at 550 °C and 3×10¹⁵ cm⁻³ for a 700 °C annealing and the trap capture cross-section was estimated about 10⁻¹⁸ cm². From the temperature dependence of the dark current in the temperature range 20 °C–120 °C the conduction mechanism activation energy was found to be about 0.956–0.978 eV. The electrical conductivity depends not only on the sample annealing temperature but also whether the measurement is performed in vacuum or air. The results on the dark conductivity are discussed considering the influence of oxygen atoms and oxygen vacancies. Received: 28 January 1998 / Accepted: 8 January 1999 / Published online: 5 May 1999     

Effect of surface states on the amphoteric behavior of Sn in vapor epitaxial GaAs

The amphoteric behavior of Sn, a commonly-used dopant in AsCl₃GaH₂ vapor epitaxy, is examined for Sn concentration from 5 × 10¹⁴ to 5 × 10¹⁷cm^?3. The compensation ratio $\text{(}\text{N}{}_{\mathrm{A}}\text{N}{}_{\mathrm{D}}\text{)}$ remains constant at 0.23 for low concentrations and begins to increase in the 10¹⁶cm^?3 range. This behavior can be explained quantitatively with non-equilibrium impurity incorporation model which takes into account 3 × 10¹¹ cm^?2 surface states.