Characterization of electronic structure in dielectric materials by making use of the secondary electron emission

The methodology of characterizing electronic structure in dielectric materials will be presented in detail. Energy distribution of the electrons emitted from dielectric materials by the Auger neutralization of ions is measured and rescaled for Auger self-convolution, which is restructured from the energy distribution of the emitted electrons. The Fourier transform is very effective for obtaining the density of states from the Auger self-convolution. The MgO layer is tested as an example of this new measurement scheme. The density of states in the valence band of the MgO layer is studied by measuring the energy distribution of the emitted electrons for MgO crystal with three different orientations of (111), (100) and (110). The characteristic energy of ?₀ corresponding to the peak density of the states in the band is determined, showing that the (111) orientation has a shallow characteristic energy ?₀ = 7.4 eV, whereas the (110) orientation has a deep characteristic energy ?₀ = 9.6 eV, consistent with the observed coefficient γ of the secondary electron emission for MgO crystal. Electronic structure in new functional nano-films spayed over MgO layer is also characterized. It is therefore demonstrated that secondary electron emission by the Auger neutralization of ions is highly instrumental for the determination of the density of states in the valence band of dielectric materials. This method simultaneously determines the valence band structure and the coefficient γ of the secondary electron emission, which plays the most important role in the electrical breakdown phenomena.     

Reflection electron energy loss spectroscopy in Mn x Si1 − x composite structures

The dependences of the product of the electron inelastic mean free path λ and the differential cross section for inelastic electron scattering K on energy loss are determined from the experimental energy-loss spectra of the reflected electrons of Mn _x Si_{1 ? x} (0 ≤ x ≤ 1) composite structures. It is shown that the minimum values for the dependences of the product λK on the electron-energy loss can be used for the quantitative determination of element concentrations in this composite structure.     

The decomposition of methanol on tungsten

In a simple cone-model of volume excitation for nearly free electron metals the resulting momentum distribution of excited electrons is shown to be anisotiopic in polycrystalline material with the bulk of excited electrons moving parallel to the electric field vector. Calculation of the yields Y_p for p-polarized light, and Y_s for s-polanzed light, from this momentum distribution gives large values of Y_p/Y_s and a characteristic photon energy dependence. Photoemission measurements at a gold-electrolyte interface are in qualitative agreement with the proposed model.     

Exciton and phonon spectra of acoustooptic Tl3AsS3 crystals

The λ-modulated exciton reflection spectra of Tl₃AsS₃ crystals are investigated at 8 and 77 K, in which the ground (n=1) and excited (n=2, 3) exciton states are revealed. Taking into account the spatial dispersion, the shapes of λ-modulated reflection spectra of the n=1 line are calculated and the basic parameters of excitons and bands are determined (the translational and reduced masses of excitons and the effective masses of electrons and light and heavy holes). The one-phonon reflection spectra are studied in the region from 50 to 500 cm^?1 in polarizations E ∥ c and E ⊥ c. The shapes of one-phonon reflection spectra are calculated and the parameters of vibrational modes E and A ₂ are determined.     

Inelastic mean free paths for electrons in bulk jellium

Bulk inelastic mean free paths, λ, of electrons in jellium are given in graphical form as a function of the electron spacing parameter r_s and the electron energy E, based on self-energy results of Lundqvist. The results are suggested as a useful guide to the dependence of λ on the material in the energy range near the minimum of λ.     

Anregung von Kristallgitterschwingungen durch Elektronenstrahlen

The interaction of electrons with lattice vibrations in thin films of LiF, NaF, MgO, and Al₂O₃ has been studied by means of high resolution electron energy spectroscopy. Just above the excitation energy of the transversal optical modes small bands in the energy loss spectrum are observed. According to the dielectric theory of an unbounded medium only longitudinal optical modes should be excited. The observed energy loss spectrum may be explained by the excitation of surface lattice vibrations. A theoretical energy loss spectrum of LiF has been computed taking into account the surface effects. It is in excellent agreement with the experimental spectrum. Apart from electrons with energy loss also electrons with energy gain were observed. The intensity distribution of the energy gain spectrum is equivalent to the energy loss spectrum. Energy loss and gain spectra of fast electrons by excitation of lattice vibration are corresponding to the Stokes- and Antistokes lines of spectroscopy of light optics.     

Mach-shock electron distributions from solids

Heavy ion induced density fluctuations in the electron plasma of solids known as wakes show the characteristic features of Mach-shock waves. We propose a method to detect the electron wake in solid state materials by measuring the angular distribution of emitted electrons of low energy. These show up as distinct maxima at certain angles. In the emission angle we find an increase with bombarding energy, following the Mach relation cosΘ _em=v _s /v ₀.     

Postcollision interaction upon electron excitation of the 5sns 1 S 0 and 5snd 3 D j levels of the cadmium atom

The optical excitation functions (OEFs) for two series of spectral lines of the Cd atom originating from the 5sns ¹ S ₀ (n = 6?11) and 5snd ³ D _{1, 2, 3} (n = 5 and 6) levels excited by an ultramonoenergetic (ΔE _1/2 < 0.05 eV) electron beam with energies exceeding the single ionization threshold are presented. In the energy range from 10.8 to 12.9 eV, the energy dependences of the excitation cross sections of the studied spectral transitions exhibit the effect of postcollision interaction of slow scattered and fast emitted electrons. This process leads to an additional population of the initial levels of the spectral transitions due to the capture of a scattered electron into an excited atomic level. The energies and widths of the electronic decay of autoionizing states are estimated in the classical approach by two methods, namely, by the least squares method and by direct calculation. Calculations are performed using approximate formulas valid for different relations between the postcollision shifts of the OEF maxima and the binding energies of the atomic levels. The terms of the autoionizing atomic states responsible for the maxima observed in the OEFs of the spectral transitions are determined.     

Spinpolarisation und Winkelverteilung der Elektronen nach Anregung verschiedener Zustände des Hg-Atoms

At energies above ～ 50 eV, electrons scattered inelastically from mercury atoms show a similarity to elastically scattered electrons in both spin polarization and angular distribution. This similarity vanishes at primary energies below ～ 30 eV for the 6p′³ P ₁-channel (11.0 eV energy loss) and below～ 25 eV for the 6¹ P ₁-channel (6.7 eV energy loss).     

Temperature dependent energy relaxation time in AlGaN/AlN/GaN heterostructures

The two-dimensional (2D) electron energy relaxation in Al_0.25Ga_0.75N/AlN/GaN heterostructures was investigated experimentally by using two experimental techniques; Shubnikov-de Haas (SdH) effect and classical Hall Effect. The electron temperature (T_e) of hot electrons was obtained from the lattice temperature (T_L) and the applied electric field dependencies of the amplitude of SdH oscillations and Hall mobility. The experimental results for the electron temperature dependence of power loss are also compared with the current theoretical models for power loss in 2D semiconductors. The power loss that was determined from the SdH measurements indicates that the energy relaxation of electrons is due to acoustic phonon emission via unscreened piezoelectric interaction. In addition, the power loss from the electrons obtained from Hall mobility for electron temperatures in the range T_e > 100 K is associated with optical phonon emission. The temperature dependent energy relaxation time in Al_0.25Ga_0.75N/AlN/GaN heterostructures that was determined from the power loss data indicates that hot electrons relax spontaneously with MHz to THz emission with increasing temperatures.     

New method for determining refractive index and thickness of fluorescent thin films

The optical parameters of homogeneous, isotropic, and fluorescent thin films are determined by comparing measured with calculated angular intensity distributions of the s- and p-polarized light emitted into the substrate. The method also yields information about the multipole nature of the emitted radiation. The theory is presented for electric and magnetic dipole transitions. For extremely thin layers of optical thickness n₀d₀ ? λ/8 (where λ is the emission wavelength) analytic expressions for the angular intensity distributions are given. For between 25–30 nm thick evaporated layers of an europium-benzoyltrifluoro-acetone- chelate the refractive index was determined to be n₀ = 1.57 at λ = 612 nm. The fluorescent light emitted by these layers in an about 6 nm wide band centered at λ = 612 nm is emitted by randomly oriented electric dipoles.     

The determination of theK-shell fluorescence yield of xenon by use of the proportional counter method

The wall-less proportional counter filled with propane with a small admixture of xenon was used as a spectrometer of electrons emitted by xenon atoms when photoelectrically excited by americium-241γ-rays and erbiumKα rays. TheK-shell fluorescence yield of xenon as extracted from spectra ammounts toω _k=0.889(1±0.01).     

Energieverluste monochromatisierter 30 keV-Lithiumionen an Argon und Äthylen

The energy loss spectra of 30-keV Li₇ ⁺ ions after interaction with argon and ethylene have been studied. Wien filters were used as monochromator and energy analyzer, an energy resolution of 0.2 eV was achieved. The ion energy loss spectra obtained differ from those taken with electrons at the same primary energy mainly in two points: In the ion spectra energy losses are found with strong intensities corresponding to optically forbidden transitions which are not excited by fast electrons. Furthermore in the energy range beyond the first ionization limit energy losses appear which are due to charge transfer into excited states of the lithium atom and re-ionization.     

Bestimmung von optischen Konstanten an Palladium und Silber aus Energieverlustmessungen im Energiebereich von 2 bis 90 eV

The energy loss functions Im (?1/?) of Silver and Palladium are determined from energy loss experiments with 60 keV electrons. The influence of surface effects and multiple losses is discussed and the values of Im (?1/?) are corrected for them. By means of Kramers-Kronig analysis the optical constants? ₁ and? ₂ are calculated from the energy loss function and found to be in good agreement with data derived from optical experiments by various authors.     

Ne(I) spectral lines from a Ne-O2 d.c. glow discharge

Measurements have been made of intensities of the spectral lines emitted from an Ne-O₂ d.c. discharge with small discharge current (1–4 mA) under the following conditions: gas pressures of 2 and 3 torr and oxygen partial pressures (P₀₂) up to 0.1 torr. All of the Ne(I) line intensities observed decrease when O₂ is added. The Ne(I) λ5852 line (1s₂-2p₁) has been studied in detail as a representative example. The population density of the 2p₁ level of neon has been obtained from the intensity measurements as a function of P₀₂. The energy-distribution function of electrons has been determined using Druyvesteyn's method in order to calculate the population density for a corona model. The high-energy tail of the measured distribution function is markedly reduced when O₂ is added. It is shown that inelastic collisions of electrons with O₂ produce large energy losses for the electrons. These cause a decrease in population density of the 2p₁ level when O₂ is added. The population density of the 2p₁ level at a gas pressure of 2 torr is 1.2×10⁴ cm^-3 in pure neon and 5.2×10² cm^-3 in an Ne-O₂ mixture (P₀₂ = 0.01 torr). The electron densities and average electron energies are 3.5×10⁸ cm^-3 and 8.7 eV and 1.7×10⁸ cm^-3 and 5.3 eV, respectively, for the specified two cases.     

Ionization function of magnesium for electron impact

Ionization cross sections for electron impact are measured with crossed beams of Mg atoms and pulsed electrons. Total numbers of particles are determined by the light emission of excited atoms. The ionization cross section obtained for electron energies from 7 eV to 60 eV has its maximum valueq _i (max)=7.8 · 10^?16 cm² at 12 eV electron energy.     

Observation of a high spin polarization of secondary electrons from single crystal Fe and Co

The spin polarization of secondary electrons with nearly zero kinetic energy from Fe (100) and Co (10$\text{1}$0), excited with photons of energy between 20 and 60 eV, was found to be 45%±5% for Fe and 35%±5% for Co. This value is higher than the average valence band spin polarization P_b=n_b/n=2.2/8=27% and 1.7/9=19% for Fe and Co, respectively. With increasing kinetic energy, the spin polarization of the secondaries decreases to the value of P_b within the first 5 eV, remaining constant (within statistical error) at higher kinetic energies. As a spin dependent scattering process we propose excitations within the d-bands, which can be shown to be asymmetric with respect to the electron spin. The high net spin polarization of the slowest emitted electrons is obtained by filtering out monitory-spin electrons at the vacuum barrier.     

Possible evidence for heavy-ion-induced collective electron emission from solids

A peak has been observed for the first time in the angular distributions of low energy electrons (E_c<5 eV) emitted under heavy-ion bombardment of solids. The peak energy and angle coincide with the peak energy and angle predicted recently for collective electron emission in heavy-ion-solid collisions.     

Energy distribution of electrons emitted from Al-Al2O3-Al system

On sandwich cathodes of the Al-Al₂O₃-Al structure were measured both the VA characteristics of leakage and emission currents and the distribution of emitted electrons according to a normal energy componentN(W _x ) for various voltages thicknesses of dielectric and upper metal films, and various voltages superimposed on cathode (leakage voltage). On the basis of experimental dependences obtained, the influence of single parts of the system on the transported electrons has been discussed. Three groups of distribution ofN(W _x ) were found differing in their form on the one hand and in their position in the energy band diagram of the studied system, on the other one. The dependence of the distribution width and the position of its maximum on the thickness of the dielectric layer and electric field intensity was followed. To describe the processes in a dielectric layer a model assuming the random collision processes has been applied. All three groups of measured distributions may be expressed by a single equation of the typeN(W _x )=N ₀(W _x ). P(z). D(W), except a small number of cases where the influence of the upper electrode barrier due to higher voltages on cathode is not taken into account and thus theD(W) term need not be considered.