Effect of phosphorus irradiation on the structural,electrical, and optical characteristics of ZnO thin films

Phosphorus irradiation at a low energy (50 keV) and at a dosage of 8×10¹⁴ ions/cm² was carried out on 〈002〉 ZnO films grown by using a pulsed laser deposition technique (Sample A). Subsequent rapid thermal annealing at 650 °C and 750 °C was performed to remove defects resulting from the irradiation (samples B and C, respectively). Atomic force microscopy was used to determine the root mean square roughness, which was 10.07, 8.66, and 9.31 nm for samples A, B, and C, respectively. Low-temperature photoluminescence measurements revealed increased deep-level defect peaks following irradiation; however, the subsequent annealing minimized the defects. Although the dominant donor-bound exciton peak verifies the n-type conductivity of the films, the free–electron–to–acceptor and donor-to-acceptor pair peaks in the irradiated samples confirm an increase in acceptor concentration.     

Enhancement of magnetic properties of Co/Pd multilayered perpendicular magnetic recording media by using Pd/Si dual seedlayer

Effects of the introduction of a Pd/Si dual seedlayer on the microcrystalline structure and magnetic properties of [Co/Pd]_n multilayered perpendicular magnetic recording media were investigated. The Pd/Si dual seedlayer was composed of a Pd upper seedlayer and a Si under seedlayer. The Pd upper seedlayer with a thickness of up to 10 nm markedly increased the coercivity of [Co/Pd]_n multilayered media in the direction perpendicular to the film surface. The highest coercivity of 7.8 kOe was obtained for the [Co/Pd]₁₀ medium with a Pd (10 nm)/Si (100 nm) dual seedlayer. The Pd upper seedlayer not only facilitated the formation of regular interfaces between the Co and Pd layers, but also reduced the thickness of the deteriorated initial layer in the [Co/Pd]_n multilayer, resulting in enhancement of the magnetic anisotropy field. The [Co/Pd]_n multilayered medium with the Pd/Si dual seedlayer exhibited weak intergranular exchange coupling between [Co/Pd]_n grains, which led to excellent read–write characteristics.     

Microwave irradiation on carbon black: Studies on the transformation of particles into nano-balls,nano-sticks and nano-onion like structures

The solid-state transformation behavior of carbon black (CB) nanoparticles after irradiated with microwave energy was studied with and without influence of a metal catalyst. The CB sample was exposed to microwave radiation at power of 900 W from the oven and collected after 15 min and after 30 min and 45 min of irradiation. The samples were characterized using X-ray diffraction measurements, Raman spectroscopy, scanning electron microscopy, high-resolution transmission electron microscopy (HRTEM) and thermogravimetric analysis. Characterization of the samples prepared without catalyst shows that microwave irradiation can transform CB nanoparticles into nano–balls and nano–stick like structures. While nanoballs of almost 300–500 nm diameter are visible in all the samples irrespective of microwave irradiation time, amorphous nano-stick like structure are present only in the sample collected after 30 min of microwave irradiation. CB irradiated together with a metal catalyst resulted in metal-encapsulated onion like structures with perfectly arranged graphene layers.     

Magnetic properties of Nd–Fe–B system anisotropic HDDR powder made from segregated master ingots

In order to examine the possibility of applying the HDDR process to segregated master ingots, Nd–Fe–B system HDDR powders were made from ingots with different levels of homogeneity, and their structures and magnetic properties were evaluated in detail. HDDR powders made from segregated as-cast ingots displayed anisotropy and large coercivity. They had a nearly homogeneous Nd₂Fe₁₄B phase, although some large areas with α-Fe and Nd-rich regions of 30 μm in size were present after the HD process. With increasing in the homogeneity level of the master ingots, the anisotropy of HDDR-processed powders decreased and their coercivity increased. In addition, an intermediate Ar treatment was applied between the HD and DR processes to improve the magnetic properties. As a result, the effect of the IA treatment was clearly confirmed, and good magnetic properties of B_r=1.23 T, H_cJ=848 kA/m and (BH)_max=238 kJ/m³ were obtained.     

Interface Mn nanoclusters in YMnO3/Si ferroelectric gate structures revealed by electron magnetic resonance

In this work, systematic X-band electron magnetic resonance (EMR) studies for YMnO₃/Si ferroelectric gate structures were performed to trace a variation of interface characteristics as different sputtering condition of O₂/(Ar + O₂) ratio. Our result showed that the EMR signal intensities were increased with increasing O₂/(Ar + O₂) ratio. In addition, it was suggested from detailed analyses that the observed EMR signals could be originated from Mn nanoclusters existing in both the polycrystalline Y₂O₃ layer and the amorphous Si-enriched Y–Si interface layer in YMnO₃/Si thin film structure. And also, a correlation between the decrease of crystallinity in YMnO₃/Si film and the content of Mn nanoclusters within the polycrystalline Y₂O₃ layer and/or the amorphous Y–Si layer was discussed.     

Magnetic domain structures of overquenched Nd–Fe–B permanent magnets studied by electron holography

Microstructures and magnetic domain structures of overquenched Nd–Fe–B permanent magnets have been investigated in detail by transmission electron microscopy. While magnetic domain boundaries are clarified by Lorentz microscopy, magnetization distribution in the domains is clearly observed by electron holography. In the as-quenched magnet, the size of the magnetic domains is in the range from 200 to 500 nm and the direction of the magnetic lines of force changes gradually in wide region, while in the annealed one having the crystalline phase of Nd₂Fe₁₄B, the direction of the magnetic lines of force changes drastically especially at the grain boundaries. Furthermore, the direction of the magnetic lines of force changes more drastically in the specimen annealed at 893 K than the specimen annealed at 843 K. This result clearly indicates that the magnetocrystalline anisotropy is enhanced with the increase of annealing temperature, resulting in strong domain wall pinning.     

Effects of ultrasonic agitation and surfactant additive on surface roughness of Si (1 1 1) crystal plane in alkaline KOH solution

In the silicon wet etching process, the “pseudo-mask” formed by the hydrogen bubbles generated during the etching process is the reason causing high surface roughness and poor surface quality. Based upon the ultrasonic mechanical effect and wettability enhanced by isopropyl alcohol (IPA), ultrasonic agitation and IPA were used to improve surface quality of Si (1 1 1) crystal plane during silicon wet etching process. The surface roughness R_q is smaller than 15 nm when using ultrasonic agitation and R_q is smaller than 7 nm when using IPA. When the range of IPA concentration (mass fraction, wt%) is 5–20%, the ultrasonic frequency is 100 kHz and the ultrasound intensity is 30–50 W/L, the surface roughness R_q is smaller than 2 nm when combining ultrasonic agitation and IPA. The surface roughness R_q is equal to 1 nm when the mass fraction of IPA, ultrasound intensity and the ultrasonic frequency is 20%, 50 W and 100 kHz respectively. The experimental results indicated that the combination of ultrasonic agitation and IPA could obtain a lower surface roughness of Si (1 1 1) crystal plane in silicon wet etching process.     

Structure,optical, and magnetic properties of rutile Sn1−xMnxO2 thin films

Sn_1?xMn_xO₂ (x ≤ 0.11) thin films were fabricated by sol–gel and spin-coated method on Si (1 1 1) substrate. X-ray diffraction revealed that single-phase rutile polycrystalline structure was obtained for x up to about 0.078. Evolution of the lattice parameters and X-ray photoelectron spectroscopy studies confirmed the incorporation of Mn³⁺ cations into rutile SnO₂ lattice. Optical transmission studies show that the band gap energy (E_g) broadens with the increasing of Mn content. Magnetic measurements revealed that all samples exhibit room temperature ferromagnetism (RTFM), which is identified as an intrinsic characteristic. Interestingly, the magnetic moment per Mn atom decreases with the increasing Mn content. The origin of RTFM can be interpreted in terms of the bound magnetic polaron model.     

Structural and optical properties of Mn-doped ZnO nanocrystalline thin films with the different dopant concentrations

The transparent nanocrystalline thin films of undoped zinc oxide and Mn-doped (Zn_1−xMn_xO) have been deposited on glass substrates via the sol–gel technique using zinc acetate dehydrate and manganese chloride as precursor. The as-deposited films with the different manganese compositions in the range of 2.5–20 at% were pre-heated at 100 °C for 1 h and 200 °C for 2 h, respectively, and then crystallized in air at 560 °C for 2 h. The structural properties and morphologies of the undoped and doped ZnO thin films have been investigated. X-ray diffraction (XRD) spectra, scanning electron microscopy (SEM), atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS) were used to examine the morphology and microstructure of the thin films. Optical properties of the thin films were determined by photoluminescence (PL) and UV/Vis spectroscopy. The analyzed results indicates that the obtained films are of good crystal quality and have smooth surfaces, which have a pure hexagonal wurtzite ZnO structure without any Mn related phases. Room temperature photoluminescence is observed for the ZnO and Mn-doped ZnO thin films.     

Structural and magnetic properties of HCP-CoCrPt–SiO2 granular media

Granular HCP-(CoCrPt)_100−x(SiO₂)_x thin films with Cr underlayers have been fabricated by sputtering multilayers followed by post-deposition annealing. Magnetic and structural properties of the films for potential applications in magnetic recording media have been investigated in detail. In as-deposited films coercivities exceeding 2.5 kOe have been obtained with SiO₂ varying from 8 to 16 vol%; high coercivity of 5.6 kOe and anisotropy of 4.6×10⁶ erg/cm³ have been achieved at low M_rt value (about 0.4 memu/cm²) in the post-annealed films. VSM measurements showed that the magnetic moment lies well in the film plane under proper preparation conditions. Grain isolation in the magnetic layer was improved by segregating SiO₂ into grain boundaries and further enhanced by post-deposition annealing. The rapid increase of the coercivity upon annealing is most likely due to the significant decrease in intergranular exchange coupling, as shown by the δM measurement in which the peak value of δM curves changed from a positive value to a negative value upon annealing. Magnetic reversal properties of the films have also been systematically studied. These results show that the HCP-CoCrPt–SiO₂ granular film is a promising candidate for ultra-high-density recording media up to 100 Gbit/in² or beyond because of its low Pt content and desirable properties.     

EPR and UV spectroscopic investigations of sucrose irradiated with heavy-ion particles

Crystalline sucrose irradiated with C and Si ions is investigated with EPR and UV spectroscopy. Samples are treated at different doses of radiation in the region 20–300 Gy and linear energy transfer (LET) values of 39.6, 49 and 58 keV μm^?1 for C ions and 60 keV μm^?1 for Si ions. All samples exhibit identical EPR spectra due to radiation-induced stable sucrose radicals. At given constant LET the EPR signal responses are linear to the absorbed doses of Si and C ions. Water solutions of irradiated sucrose exhibit UV absorption maximum at 267 nm due to the product of radical recombination. The intensity of this band is stronger at irradiation with Si than with C ions. UV absorption is more sensitive to heavy-ion species irradiation than the EPR signals.     

Band offsets of epitaxial Tm2O3 high-k dielectric films on Si substrates by X-ray photoelectron spectroscopy

Tm₂O₃ crystalline films have been deposited on Si (0 0 1) by molecular beam epitaxy (MBE). Band alignments of Tm₂O₃/Si gate stacks were studied by X-ray photoelectron spectroscopy (XPS). According to XPS measurements, it can be noted that a valence-band offset of ?3.1 ± 0.1 eV and a conduction-band offset of 2.3 ± 0.3 eV for the Tm₂O₃/Si heterojunction have been obtained. Based on analysis from O 1s energy-loss spectrum, the energy gap of Tm₂O₃ is determined to be 6.5 ± 0.3 eV. A relatively thicker interfacial SiO_x layer was observed for the as-annealed samples. However, no apparent change in band alignment has been observed for Tm₂O₃/Si heterojunction with the formation of interface layer, which has been discussed in detail.     

Ab initio study of Yb on the Ge(111)–(3 × 2) and Si(111)–(3 × 2) surfaces

The surface reconstruction, 3 × 2, induced by Yb adsorption on a Ge (Si)(111) surface has been studied using first principles density-functional calculation within the generalized gradient approximation. The two different possible adsorption sites have been considered: (i) H₃ (this site is directly above a fourth-layer Ge (Si) atom) and (ii) T₄ (directly above a second-layer Ge (Si) atom). We have found that the total energies corresponding to these binding sites are nearly the same, indeed for the Yb/Ge (Si)(111)–(3 × 2) structure the T₄ model is slightly energetic by about 0.01 (0.08) eV/unitcell compared with the H₃ model. In particular for the Ge sublayer, the energy difference is small, and therefore it is possible that the T₄, H₃, or T₄H₃ (half of the adatoms occupy the T₄ adsorption site and the rest of the adatoms are located at the H₃ site) binding sites can coexist with REM/Ge(111)–(3 × 2). In contrast to the proposed model, we have not determined any buckling in the Ge = Ge double bond. The electronic band structures of the surfaces and the corresponding natures of their orbitals have also been calculated. Our results for both substrates are seen to be in agreement with the recent experimental data, especially that of the Yb/Si(111)–(3 × 2) surface.     

Magnetic behaviour of nanocrystalline Ni–Cu ferrite and the effect of irradiation by 100 MeV Ni ions

The effects of 100 MeV Ni ion irradiation on magnetic properties of nanoparticles of Ni_0.8Cu_0.2Fe₂O₄ with average particle sizes of 40 Å and 60 Å, synthesized by chemical co-precipitation method have been studied. The spinel cubic structures were confirmed by XRD. The average particle size estimated by XRD and by Langevin function fitting are in good agreement for both the pristine and irradiated samples. The blocking temperature increases with particle size and does not change after irradiation. On irradiation by 100 MeV Ni ions, significant changes in the hysteresis loop features are observed, which may be attributed to formation of cluster of defects in the nanocrystalline samples due to swift heavy ion (SHI) irradiation. It is also found that SHI irradiation produces more dominant changes in the hysteresis loop of smaller particle size of 40 Å as compared to that of 60 Å.     

High coercivity and superparamagnetic behavior of nanocrystalline iron particles in alumina matrix

Single-domain nanoscale magnetic iron particles have been embedded uniformly in an amorphous matrix of alumina using a pulsed laser deposition technique. Structural characterization by transmission electron microscopy (TEM) reveals the presence of a crystalline iron and an amorphous alumina phase. Fine particle magnetism have been investigated by carrying out field and temperature dependence of magnetization measurements using superconducting quantum interference device magnetometer. The particle size of Fe in Al₂O₃ matrices prepared by changing the deposition time of Fe, have been found to be 9, 7 and 5 nm from TEM studies. At 10 K, the coercivities of these samples are found be 450, 350 and 150 Oe, respectively. At 300 K, the coercivity of Fe–Al₂O₃ sample decreases from 100 to 50 Oe as the particle size decreases from 9 to 7 nm and finally the sample turns superparamagnetic when the Fe particle size becomes around 5 nm. Based on the calculated value of blocking temperature, T_B, (481 K), magnetic anisotropy K (4.8×10⁵ erg/cm³) for Fe, and the Boltzmann constant k_B (1.38×10⁻¹⁶ erg/K) from T_B=KV/25k_B, the mean radius of Fe particles is found to be 9.3 nm. in one of the samples. This is in good agreement with the particle size measured using TEM studies.     

Surface electromigration of In on vicinal Si(0 0 1)

Surface mass transport of In film on vicinal Si(0 0 1) has been systematically investigated by a scanning Auger electron microscopy (SAM), low energy electron diffraction (LEED) and atomic force microscopy (AFM). It was observed that the temperature dependence of the mass transport shows the critical phenomenon. Above a critical temperature T_c, surface electromigration of the In film toward the cathode side dominated the surface mass transport on the vicinal Si(0 0 1) surface. The LEED and AFM observations revealed that the In film surface on the vicinal Si(0 0 1) consists of 3×4 terraces and (3 1 0) facets. The area ratio of the facet to the terrace exhibited abrupt an increase at T_c. It is believed that the change of the mass transport is related to the abrupt change of the area ratio of the facet to the terrace. Both the critical temperature T_c and the spread due to the surface electromigration of the In film depended on the configuration of the DC current direction and the step edge.     

Effect of the substitution of Pr for Nd on microstructure and magnetic properties of nanocomposite Nd2Fe14B/α-Fe magnets

Microstructure and magnetic properties of melt-spun nanocomposite magnets with nominal compositions of (Nd_1−xPr_x)₉Fe₈₆B₅ (x=0–1) were investigated. Substitution of Nd by Pr could significantly improve the hard magnetic properties of the nanocomposite magnets; the intrinsic coercivity (_iH_c) and the maximum magnetic energy product ((BH)_max) increase from 414 kA/m and 124 kJ/m³ for x=0 to 493 kA/m and 152 kJ/m³ for x=0.6, respectively. Further substituting Nd by Pr (x>0.6) strongly weakens exchange-coupling interaction between magnetically hard and soft phases.     

Effects of calcining temperature on structural and magnetic properties of nanosized Fe-doped NiO prepared by diol-based sol−gel process

Iron-doped nickel oxide (Fe_0.01Ni_0.99O, abbreviated as FNO) nanoparticles were prepared by sol–gel process using 1,3-propanediol as a solvent and also as a chelating agent, and calcined at the various temperatures (400–1000 °C) for 2 h. The phase composition and the microstructure of the calcined products were investigated by X-ray diffraction and scanning electron microscopy techniques, respectively. Magnetic properties were measured at room temperature using a vibrating sample magnetometer. All calcined samples showed the single phase of FNO cubic rock-salt structure without the presence of any impurity phases. The crystallite size from XRD and particle size from SEM increased as calcining temperature increased. The FNO powders calcined at 400?600 °C revealed the uniform and dense spherical particles in nanosize. The room-temperature ferromagnetism was observed for all samples. When the calcining temperature was increased, the saturation magnetization decreased whereas the coercivity increased, corresponding to the less dense and larger particles. The calcined sample at 400 °C had the best magnetic properties with the highest M_s of 5.34 emu/g (at 10 kOe) and the lowest H_c of 372 Oe.     

Self-limited growth of the CaF nanowire on the Si(5 5 12)-2 × 1 template

The atomic structure and interfacial bonding of the ordered-and-isolated CaF nanowires on Si(5 5 12)-2 × 1 have been disclosed by scanning tunneling microscopy and synchrotron photoemission spectroscopy. Initially, CaF molecules dissociated from thermally deposited CaF₂ molecules are adsorbed preferentially on the chain structures of Si(5 5 12)-2 × 1 held at 500 °C. With increasing CaF₂ deposition amount, one-dimensional (1D) CaF nanowires composed of (113) and (111) facets are formed. The line density of these CaF nanowires increases as a function of deposition amount. Finally, at a submonolayer coverage, the surface is saturated with these 1D nanowires except for the (225) subunit, while the original period of Si(5 5 12)-2 × 1, 5.35 nm, is preserved. It has been deduced by the present studies that, owing to these preferential adsorption of CaF and facet-dependent growth of a CaF layer within a unit periodic length of Si(5 5 12)-2 × 1, such a self-limited growth of the CaF nanowire with a high aspect ratio becomes possible.     

The effect of SixNy interlayer on the quality of GaN epitaxial layers grown on Si(1 1 1) substrates by MOCVD

In the present paper, the effects of nitridation on the quality of GaN epitaxial films grown on Si(1 1 1) substrates by metal–organic chemical vapor phase deposition (MOCVD) are discussed. A series of GaN layers were grown on Si(1 1 1) under various conditions and characterized by Nomarski microscopy (NM), atomic force microscopy (AFM), high resolution X-ray diffraction (HRXRD), and room temperature (RT) photoluminescence (PL) measurements. Firstly, we optimized LT-AlN/HT-AlN/Si(1 1 1) templates and graded AlGaN intermediate layers thicknesses. In order to prevent stress relaxation, step-graded AlGaN layers were introduced along with a crack-free GaN layer of thickness exceeding 2.2 μm. Secondly, the effect of in situ substrate nitridation and the insertion of an Si_xN_y intermediate layer on the GaN crystalline quality was investigated. Our measurements show that the nitridation position greatly influences the surface morphology and PL and XRD spectra of GaN grown atop the Si_xN_y layer. The X-ray diffraction and PL measurements results confirmed that the single-crystalline wurtzite GaN was successfully grown in samples A (without Si_xN_y layer) and B (with Si_xN_y layer on Si(1 1 1)). The resulting GaN film surfaces were flat, mirror-like, and crack-free. The full-width-at-half maximum (FWHM) of the X-ray rocking curve for (0 0 0 2) diffraction from the GaN epilayer of the sample B in ω-scan was 492 arcsec. The PL spectrum at room temperature showed that the GaN epilayer had a light emission at a wavelength of 365 nm with a FWHM of 6.6 nm (33.2 meV). In sample B, the insertion of a Si_xN_y intermediate layer significantly improved the optical and structural properties. In sample C (with Si_xN_y layer on Al_0.11Ga_0.89N interlayer). The in situ depositing of the, however, we did not obtain any improvements in the optical or structural properties.