Studies on structural and magnetic properties of Co-doped pyramidal ZnO nanorods synthesized by solution growth technique

Large-area arrays of highly oriented Co-doped ZnO nanorods with pyramidal hexagonal structure are grown on silica substrates by wet chemical decomposition of zinc–amino complex in an aqueous medium. In case of undoped ZnO with an equi-molar ratio of Zn²⁺/hexamethylenetetramine (HMT), highly crystalline nanorods were obtained, whereas for Co-doped ZnO, good quality nanorods were formed at a higher Zn²⁺/HMT molar ratio of 4:1. Scanning electron microscope (SEM) studies show the growth of hexagonal-shaped nanorods in a direction nearly perpendicular to the substrate surface with a tip size of ～50 nm and aspect ratio around 10. The XRD studies show the formation of hexagonal phase pure ZnO with c-axis preferred orientation. The doping of Co ions in ZnO nanorods was confirmed by observation of absorption bands at 658, 617 and 566 nm in the UV–vis spectra of the samples. The optical studies also suggest Co ions to be present both in +2 and +3 oxidation states. From the photoluminescence studies, a defect-related emission is observed in an undoped sample of ZnO at 567 nm. This emission is significantly quenched in Co-doped ZnO samples. Further, the Co-doped nanorods have been found to show ferromagnetic behavior at room temperature from vibrating sample magnetometer (VSM) studies.     

Utilization of surface plasmon resonance of Au/Pt nanoparticles for highly photosensitive ZnO nanorods network based plasmon field effect transistor

Hydrothermally processed highly photosensitive ZnO nanorods based plasmon field effect transistors (PFETs) have been demonstrated utilizing the surface plasmon resonance coupling of Au and Pt nanoparticles at Au/Pt and ZnO interface. A significantly enhanced photocurrent was observed due to the plasmonic effect of the metal nanoparticles (NPs). The Pt coated PFETs showed I_on/I_off ratio more than 3 × 10⁴ under the dark condition, with field-effect mobility of 26 cm² V⁻¹ s⁻¹ and threshold voltage of −2.7 V. Moreover, under the illumination of UV light (λ = 350 nm) the PFET revealed photocurrent gain of 10⁵ under off-state (−5 V) of operation. Additionally, the electrical performance of PFETs was investigated in detail on the basis of charge transfer at metal/ZnO interface. The ZnO nanorods growth temperature was preserved at 110 °C which allowed a low temperature, economical and simple method to develop highly photosensitive ZnO nanorods network based PFETs for large scale production.     

Fabrication and strain investigation of ZnO nanorods on Si composing sol–gel and chemical bath deposition method

High density vertically aligned ZnO nanorods arrays were prepared on Si substrate by the simple and facile sol–gel and chemical bath deposition combination technology. ZnO nanorods, preferentially oriented along the c-axis, were of the hexagonal wurzite structure. The lattice constants of ZnO nanorods a was shrunken by about 0.004 nm, which can result in about 1.29% mismatch between ZnO nanorods and Si substrate. The Raman spectrum was also analyzed in detail, and the result indicates that the stress between ZnO nanorods and Si substrate was about 0.227 GPa, which can be ascribed to the stress relaxation effect of the ZnO nanorods. The room temperature photoluminescence (PL) measurement result has shown a main deep level emission. The forming mechanism for ZnO nanorods was further analyzed.     

Effect of growth time on Ti-doped ZnO nanorods prepared by low-temperature chemical bath deposition

Ti-doped ZnO nanorod arrays were grown onto Si substrate using chemical bath deposition (CBD) method at 93 °C. To investigate the effect of time deposition on the morphological, and structural properties, four Ti-doped ZnO samples were prepared at various deposition periods of time (2, 3.5, 5, and 6.5 h). FESEM images displayed high-quality and uniform nanorods with a mean length strongly dependent upon deposition time; i.e. it increases for prolonged growth time. Additionally, EFTEM images reveal a strong erosion on the lateral side for the sample prepared for 6.5 h as compared to 5 h. This might be attributed to the dissolution reaction of ZnO with for prolonged growth time. XRD analysis confirms the formation of a hexagonal wurtzite-type structure for all samples with a preferred growth orientation along the c-axis direction. The (100) peak intensity was enhanced and then quenched, which might be the result of an erosion on the lateral side of nanorods as seen in EFTEM. This study confirms the important role of growth time on the morphological features of Ti-doped ZnO nanorods prepared using CBD.     

Spin coating-pyrolysis derived highly c-axis-oriented ZnO layers pre-fired at various temperatures

Transparent ZnO layers were prepared on silica glass substrates by the spin coating-pyrolysis process. As-deposited films were pre-fired at 250 °C for 60 min, at 350 °C for 30 min, and at 500 °C for 10 min, followed by heat treatment at 900 °C for 30 min in air. The ZnO films were analyzed by high resolution X-ray diffraction, field emission-scanning electron microscopy, scanning probe microscopy, and ultraviolet–visible–near infrared spectrophotometry. (0 0 2)-oriented ZnO films were obtained by pre-firing at 350 °C and at 500 °C. All the ZnO films exhibited a high transmittance, above 80%, in the visible region, and showed a sharp fundamental absorption edge at 0.38–0.40 μm. The most highly c-axis-oriented ZnO with a homogeneous surface was observed at a pyrolysis temperature of 350 °C.     

Structural and magnetic properties of thin epitaxial Fe films on (1 1 0) GaAs prepared by metalorganic chemical vapor deposition

Iron films have been grown on (1 1 0) GaAs substrates by atmospheric pressure metalorganic chemical vapor deposition at substrate temperatures (T_s) between 135°C and 400°C. X-ray diffraction (XRD) analysis showed that the Fe films grown at T_s between 200°C and 330°C were single crystals. Amorphous films were observed at T_s below 200°C and it was not possible to deposit films at T_s above 330°C. The full-width at half-maximum of the rocking curves showed that crystalline qualities were improved at T_s above 270°C. Single crystalline Fe films grown at different substrate temperature showed different structural behaviors in XRD measurements. Iron films grown at T_s between 200°C and 300°C showed bulk α-Fe like behavior regardless of film thickness (100–6400 Å). Meanwhile, Fe films grown at 330°C (144 and 300 Å) showed a biaxially compressed strain between substrate and epilayer, resulting in an expanded inter-planar spacing along the growth direction. Magnetization measurements showed that Fe films (>200 Å) grown at 280°C and 330°C were ferromagnetic with the in-plane easy axis along the [1 1 0] direction. For the thinner Fe films (⩽200 Å) regardless of growth temperature, square loops along the [1 0 0] easy axis were very weak and broad.     

Synthesis and surface modification of ZnO:Cu nanoparticles by silica and PMMA

ZnO nanoparticles doped with Cu were synthesized by solid state reaction using different precursor routes and varying growth environment. Average crystallite size varied from 40 to 100 nm depending upon synthesis temperature, lower temperature favouring smaller particle size. Scanning electron microscope (SEM) images showed that particles synthesized at 250 °C were in the shape of nanorods but those synthesized at 900 °C had spherical shape. Luminescence emission showed marked dependence on the growth conditions varying from ultraviolet (UV) emission to green emission. For making the luminescent nanoparticles bio-compatible, a bioinorganic interface on ZnO:Cu nanoparticles was created by coating them with inert silica. Surface modification of ZnO:Cu was also done with lipophilic polymethylmethacrylate (PMMA). ZnO:Cu nanoparticles showed hexagonal wurtzite structure and the coating of silica was confirmed with the presence of two extra peaks due to silica in the XRD spectra. Thermogravimetric analysis (TGA) and FTIR spectroscopy indicated that PMMA molecules were adsorbed on the surface of ZnO:Cu nanoparticles. SEM images revealed that PMMA adsorption improved the dispersibilty of ZnO:Cu nanoparticles.     

Controlled repeated chemical growth of ZnO films for dye-sensitized solar cells

The controlled growth of ZnO nanorods perpendicular to substrate surface i.e. c-axis by a repeated chemical deposition method for efficient dye-sensitized solar cell application is described. X-ray diffraction study shows the wurtzite structure of ZnO with high crystallinity. Intensity and newly evolved peaks of the ZnO are found to be thickness dependent. Dye loving flower-like globular architecture of ZnO is observed after 8 μm thickness. Dye-sensitized solar cell studies show the solar-to-electrical conversion efficiency of 2.21% for 11 μm ZnO electrode when illuminated with 80 mW/cm².     

Experimental investigation on the structural,dielectric, ferroelectric and piezoelectric properties of La doped ZnO nanoparticles and their application in dye-sensitized solar cells

Pure and lanthanum (La) doped ZnO nanorods were synthesized via co-precipitation method. The structure and morphology of as grown ZnO and La-ZnO nanoparticles were studied using transmission electron microscopy (TEM) and powder X-ray diffraction (XRD) methods. The values of remnant polarization and coercive field were found to be 0.027 μC/cm² and 1.33 kV/cm, respectively, for as grown La-ZnO nanostructures. High Curie temperature (276 °C) for doped ZnO was observed in dielectric study. Piezoelectric coefficient at room temperature was found to be 101.30 pm/V. I-V characteristics were studied for both pure and doped ZnO nanoparticles. Photo-anodes of dye-sensitized solar cells (DSSCs) were made using ZnO and La-ZnO nanorods. The conversion efficiency and short circuit current density of La-ZnO nanorods based DSSC were 0.36% and 1.31 mA/cm², respectively, which were found to be largely enhanced when compared with that of pure ZnO based DSSC (0.20% and 0.94 mA/cm²).     

Effect of annealing temperature on the characteristics of ZnO thin films

Effect of annealing temperature on characteristics of sol–gel driven ZnO thin film spin-coated on Si substrate was studied. The UV–visible transmittance of the sol decreased with the increase of the aging time and drastically reduced after 20 days aging time. Granular shape of ZnO crystallites was observed on the surface of the films annealed at 550, 650, and 750 °C, and the crystallite size increased with the increase of the annealing temperature. Consequently nodular shape of crystallites was formed upon increasing the annealing temperature to 850 °C and above. The current–voltage characteristics of the Schottky diodes fabricated with ZnO thin films with various annealing temperatures were measured and analyzed. It is found that, ZnO films showed the Schottky characteristics up to 750 °C annealing temperature. The Schottky diode characteristics were diminished upon increasing the annealing temperature above 850 °C. XPS analysis suggested that the absence of oxygen atoms in its oxidized state in stoichiometric surrounding, might be responsible for the diminished forward current of the Schottky diode when annealed above 850 °C.     

Synthesis,characterization and photoluminescence of ZnO:Cd rosette-like nanostructures using solution process

Well crystalline undoped and Cd-doped ZnO rosette-like structures were successfully synthesized at low temperature (80 °C) via solution process technique during 30 min. Zinc nitrate, cadmium nitrate, sodium hydroxide and hexamine were used as starting materials. The morphology and microstructure were determined by field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), transmission electron microscopy (TEM), energy-dispersive X-ray spectroscopy (EDX) and photoluminescence (PL) spectroscopy. X-ray diffraction indicated that the structure has a single phase with wurtzite structure. FESEM indicated that rosette like structures have been formed. This rosette consists of nanorods with length 210 and 460 nm and diameter 50 and 74 nm for undoped and Cd doped ZnO, respectively. HRTEM showed a decrease in the lattice parameter after the Cd doping. EDX showed that the amount of Cd incorporated into ZnO is 6.4 wt.%. Photoluminescence measurements taken on both doped and undoped samples showed that, in the Cd-doped ZnO nanostructures, the band-edge UV emission is blue shifted and the broad green emission intensity decreased.     

Enormous enhancement of ZnO nanorod photoluminescence

ZnO nanorod arrays were grown on quartz slices in the aqueous solution of zinc acetate and hexamethylenetetramine at 90 °C. Then ZnO:Mg shells were epitaxially grown on the nanorods to form core/shell structures in the aqueous solution of zinc acetate, magnesium acetate and hexamethylenetetramine at the same temperature. Effects of the shells and UV laser beam irradiation on the crystal structure and photoluminescence properties of ZnO nanorods were studied. ZnO:Mg shells suppress the green emission and enhance the UV emission intensity of the nanorods by 38 times. Enhancement of the UV emission depends on the Mg content in the shells. Short time UV laser beam irradiation could improve ZnO nanorod emission efficiently. The UV emission intensity of ZnO nanorods is enhanced by 71 times by capping and subsequent UV laser beam irradiation.     

Influence of substrate temperature on physical properties of sprayed Zn0.85Mn0.15O films

Zn_1−xMn_xO thin films have been synthesized by chemical spray pyrolysis at different substrate temperatures in the range, 250–450 °C for a manganese composition, x = 15%, on corning 7059 glass substrates. The as-grown layers were characterized to evaluate their chemical and physical behaviour with substrate temperature. The change of dopant level in ZnO films with substrate temperature was analysed using X-ray photoelectron spectroscope measurements. The X-ray diffraction studies revealed that all the films were strongly oriented along the (0 0 2) orientation that correspond to the hexagonal wurtzite structure. The crystalline quality of the layers increased with the increase of substrate temperature up to 400 °C and decreased thereafter. The crystallite size of the films varied in the range, 14–24 nm. The surface morphological studies were carried out using atomic force microscope and the layers showed a lower surface roughness of 4.1 nm. The optical band gap of the films was ∼3.35 eV and the electrical resistivity was found to be high, ∼10⁴ Ω cm. The films deposited at higher temperatures (>350 °C) showed ferromagnetic behaviour at 10 K.     

Optical and physical characteristics of In-doped ZnO nanorods

In this paper the effect of indium dopants on structure, optical, electrical and mechanical properties of ZnO nanorods are studied. The average surface potentials and the surface currents of ZnO:In nanorods were 0.25–0.84 mV and 2.2–200 MΩ-cm, respectively. The turn-on threshold field for the vertical ZnO nanorods was around 2–16 V μm⁻¹. Emission current densities of 3.3–911.4 mA cm⁻² were obtained for an electrical field of 60–160 V μm⁻¹. The photoluminescence (PL) spectrum measured at 15–300 K showed that the intensity of the peak at 2.06 eV increased with decreasing temperature, while the peak at 2.06 eV further red shifted and the peak at 3.39 eV blue shifted.     

Synthesis of defect-rich, (001) faceted-ZnO nanorod on a FTO substrate as efficient photocatalysts for dehydrogenation of isopropanol to acetone

Highly oriented ZnO nanorod was successfully synthesised on Ag nanoseed coated FTO substrate via a microwave hydrolysis approach. It was found that the morphology and the optical properties of the ZnO nanorod are strongly influenced by the power of the microwave irradiation used during the growth process. The aspect ratio of the nanorods changed from high to low with the increasing of microwave power. It was also found that the optical band gap of the ZnO nanorod red shifted with the increasing of the microwave power, reflecting an excellent tune ability of the optical properties of ZnO nanorods. The photocatalytic activity of these unique nanorod was evaluated by a dehydrogenation process of isopropanol to acetone in the presence of ZnO nanorod. It was found that the ZnO nanorod exhibited an excellent catalytic performance by showing an ability to accelerate the production of 0.031 mol L⁻¹ of acetone within only 35 min or 0.9 mmol L⁻¹ min⁻¹ from isopropyl alcohol dehydrogenation. It was almost no conversion from isopropyl alcohol when ZnO nanorods was absence during the reaction. In this report, a detailed mechanism of ZnO nanorod formation and the relationship between morphology and optical energy band gap are described.     

Sonochemical synthesis of hierarchical ZnO nanostructures

This work is about fabrication of ZnO nanostructures (ZnO-NS) via a simple sonochemical method. The chemicals used for the synthesis of various shaped ZnO are Zn salt, sodium hydroxide and ammonia solution without other structure directing agent or surfactant needed. This method is feasible and green, as it does not require high temperature and/or highly toxic chemicals. The shape of the ZnO-NS can be tuned by adjusting the ultrasound energy dissipated via varying the ultrasonication time from 5 to 60 min. It was found that uniform ZnO nanorods with diameter around 50 nm were formed after 15 min of ultrasonication while flowerlike ZnO-NS was formed after 30 min. This method produces high quality ZnO-NS with controllable shapes, uniformity, and purity.     

Synthesis of nanocrystalline ZnO nanobelts via pyrolytic decomposition of zinc acetate nanobelts and their gas sensing behavior

The pyrolytic decomposition of layered basic zinc acetate (LBZA) nanobelts (NBs) into nanocrystalline ZnO NBs is investigated using scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL). We also report on the gas sensing response of the resulting ZnO nanomaterial to CO. The LBZA NBs are grown at 65 °C in an aqueous solution of zinc acetate dihydrate. AFM and SEM results show as-grown products possess the characteristic layered structure of the LBZA crystals. XRD and XPS results show that annealing as-grown products at 210 °C in air causes a transformation from zinc acetate to nanocrystalline ZnO NBs via thermal decomposition. The ZnO crystalline domain size increases with temperature from 9.2 nm at 200 °C to 94 nm at 1000 °C, as measured from XRD. SEM shows evidence of sintering at 600 °C. The thickness of the NBs, determined via AFM, ranges from 10 to 50 nm and remains approximately constant with annealing temperature. XPS confirmed the chemical transformation from zinc acetate to ZnO and showed a significant remaining zinc hydroxide component for the ZnO NBs consistent with published results. PL measurements at room temperature show a blue shift in peak emission as the nanobelts change from LBZA to ZnO at 200 °C. Above this transition temperature, the ZnO nanobelts possess strong band edge emission at 390 nm and little broad band emission in the visible region. The AFM and SEM images reveal that the crystallites within the nanobelts orientate in rows along the long axis during annealing. This structure provides a high surface area to volume ratio of aligned nanoparticles which is beneficial for gas sensing applications. Gas sensors fabricated from 400 °C annealed nanobelts showed a response of 1.62 when exposed to 200 ppm of CO in dry air at 400 °C, as defined by the ratio of resistance before and during exposure. This indicates that ZnO nanostructures obtained by thermal decomposition of LBZA NBs could provide a cost effective route to high sensitivity gas sensors.     

Epitaxial ZnO thin films grown by pulsed electron beam deposition

In this work, the pulsed electron beam deposition method (PED) is evaluated by studying the properties of ZnO thin films grown on c-cut sapphire substrates. The film composition, structure and surface morphology were investigated by means of Rutherford backscattering spectrometry, X-ray diffraction and atomic force microscopy. Optical absorption, resistivity and Hall effect measurements were performed in order to obtain the optical and electronic properties of the ZnO films. By a fine tuning of the deposition conditions, smooth, dense, stoichiometric and textured hexagonal ZnO films were epitaxially grown on (0001) sapphire at 700 °C with a 30° rotation of the ZnO basal plane with respect to the sapphire substrate. The average transmittance of the films reaches 90% in the visible range with an optical band gap of 3.28 eV. Electrical characterization reveals a high density of charge carrier of 3.4 × 10¹⁹ cm^?3 along with a mobility of 11.53 cm²/Vs. The electrical and optical properties are discussed and compared to ZnO thin films prepared by the similar and most well-known pulsed laser deposition method.     

High quality nitrogen-doped zinc oxide thin films grown on ITO by sol–gel method

Highly transparent N-doped ZnO thin films were deposited on ITO coated corning glass substrate by sol–gel method. Ammonium nitrate was used as a dopant source of N with varying the doping concentration 0, 0.5, 1.0, 2.0 and 3.0 at%. The DSC analysis of prepared NZO sols is observed a phase transition at 150 °C. X-ray diffraction pattern showed the preferred (002) peak of ZnO, which was deteriorated with increased N concentrations. The transmittance of NZO thin films was observed to be ~88%. The bandgap of NZO thin films increased from 3.28 to 3.70 eV with increased N concentration from 0 to 3 at%. The maximum carrier concentration 8.36×10¹⁷ cm⁻³ and minimum resistivity 1.64 Ω cm was observed for 3 at% N doped ZnO thin films deposited on glass substrate. These highly transparent ZnO thin films can be used as a window layer in solar cells and optoelectronic devices.     

Graphene on SiC(0001) and SiC(0001̅) surfaces grown via Ni-silicidation reactions

This paper presents the structure and electronic properties of graphene grown on 6H-SiC(0001) and SiC(0001?) surfaces via Ni-silicidation reactions at temperatures around 800 °C. Silicidation reactions take place at temperature higher than 400 °C for Ni(10 ML)/SiC and a single-phase θ-Ni₂Si(0001)-layer grows epitaxially on SiC(0001?) at 500 °C, whereas a mixed phase silicide-layer is formed on the SiC(0001) substrate. Annealing at 800 °C leads to growth of ordered graphite layers on both SiC(0001?) and SiC(0001) surfaces with an areal occupation ratio of ～ 65%, which surround the Ni-silicide islands. High-resolution ion scattering analysis reveals that single- and double-layer of graphite grow on the SiC(0001?) and SiC(0001), respectively. The dispersion curve of the π band for the double-layer graphite (DG) on the Si-face lies about 1 eV above that of the single-layer graphite (SG) on the C-face around the Γ-point. The work functions of the SG/SiC(0001?) and DG/SiC(0001) are derived to be 5.15 ± 0.05 and 4.25 ± 0.05 eV, respectively, which coincide well with the theoretical prediction based on the ab initio calculations. The present results indicate that the electronic states of graphene are influenced by the interaction with supports.