Electron-phonon scattering in an asymmetric double barrier resonant tunneling structure

We calculate the electron-phonon scattering rate for an asymmetric double barrier resonant tunneling structure based on dielectric continuum theory, including all phonon modes, and show that interface phonons contribute much more to the scattering rate than do bulk-like LO phonons for incident energies which are approximately within an order of magnitude of the Fermi energy. The maximum scattering rate occurs for incident electron energies near the quantum well resonance. Subband nonparabolicity has a significant influence on electron-phonon scattering in these structures. We show that the relaxation time is comparable to the dwell time of electrons in the quantum well for a typical resonant tunneling structure. Received: 23 December 1997 / Revised: 24 March 1998 / Accepted: 9 March 1998     

Electron-phonon interaction in single-wall carbon nanotubes: A time-domain study

We investigate the electron-phonon (e-ph) interaction in single-wall carbon nanotube samples at room temperature using femtosecond time-resolved photoemission. By probing electrons from the vicinity of the Fermi level we are able to study the e-ph interaction in the metallic nanotube species only. The observed electron dynamics can be used to calculate e-ph scattering matrix elements for two likely scattering scenarios: forward scattering from twistons and backscattering by longitudinal acoustic phonons. The corresponding matrix elements reveal an intrinsically weak e-ph interaction approximately 50% smaller than predicted by tight-binding calculations.     

Lorenz number in high T(c) superconductors: evidence for bipolarons

The strong electron-phonon interaction in cuprates has gathered support over the last decade in a number of experiments. While phonons remain almost unrenormalized, electrons are transformed into itinerant bipolarons and thermally excited polarons when the electron-phonon interaction is strong. We calculate the Lorenz number of the system to show that the Wiedemann-Franz law breaks down because of the interference of polaron and bipolaron contributions in the heat flow. The model fits numerically the experimental Hall Lorenz number, which provides direct evidence for bipolarons in the cuprates.     

The physical origin of the electron-phonon vertex correction

In the theory of nonadiabatic superconductivity several features are governed by the electron-phonon vertex correction which has a complex structure both in momentum and frequency. We derive a physical interpretation of such nonadiabatic effects that permits to link them to specific material properties. We show how the nonadiabatic vertex correction can be decomposed into two terms with different physical origins. In particular, the first term describes the lattice polarization induced by the electrons and it is essentially a single-electron process whereas the second term is governed by the particle-hole excitations due to the exchange part of the phonon-mediated electron-electron interaction. We show that by weakening the influence of the exchange interaction the vertex takes mostly positive values giving rise to an enhanced effective coupling in the scattering with phonons. This weakening of the exchange interaction can be obtained by lowering the density of the electrons, or by considering only long-ranged (small q) electron-phonon couplings. Received 23 November 1998 and Received in final form 22 January 1999     

Electron-phonon interaction inP-doped silicon at low temperatures

In this present work, we explain the thermal conductivity results ofP doped silicon for impurity concentration 4.7×10¹⁷ and 1.0×10¹⁸ cm^–3 by applying the theory of scattering of phonons by electrons in the mixed state i.e. both in the localised state and in the metallic state. Using Mikoshiba's inhomogeneity model we calculated the number of electrons in the bound region and in the conduction band region and using the relaxation rates of both bound electron-phonon scattering and Ziman-Kosarev theory of free electron-phonon scattering, we explain the thermal conductivity values from 2 to 40 K. The values of density-of-states effective mass and dilatation deformation potential are found to be in agreement with the experimental values for silicon, for the electron concentration in the conduction band. We have also taken into account the effect of impurity scattering due to doped impurities, along with isotope scattering.     

Femtosecond transfer dynamics of photogenerated electrons at a surface resonance of reconstructed InP(100)

Time-dependent two-photon photoemission spectra are used to resolve the femtosecond dynamics of hot electrons at the energetically lowest surface resonance of reconstructed InP(100). Two different cases are studied, where electrons either are lifted into the surface resonance via a direct optical transition or are captured from bulk states. These data are the first of this kind recorded with a time resolution below 70 fs. The microscopic analysis shows that electron-phonon scattering is a major mechanism for electron transfer between surface and bulk states.     

Intervalley-scattering-induced electron-phonon energy relaxation in many-valley semiconductors at low temperatures

We report on the effect of elastic intervalley scattering on the energy transport between electrons and phonons in many-valley semiconductors. We derive a general expression for the electron-phonon energy flow rate at the limit where elastic intervalley scattering dominates over diffusion. Electron heating experiments on doped n-type Si samples with electron concentrations (3.5-16.0) x 10(25) m(-3) are performed at sub-Kelvin temperatures. We find a good agreement between the theory and the experiment.     

Effect of electron-phonon interactions on Raman line at ferromagnetic ordering

The theory of Raman scattering in half-metals by optical phonons interacting with conduction electrons is developed. We evaluate the effect of electron-phonon interactions at ferromagnetic ordering in terms of the Boltzmann equation for carriers. The chemical potential is found to decrease as the temperature decreases. Both the linewidth and frequency shift exhibit a dependence on temperature.     

Electron-phonon renormalization of the direct band gap of diamond

We calculate from first principles the temperature-dependent renormalization of the direct band gap of diamond arising from electron-phonon interactions. The calculated temperature dependence is in good agreement with spectroscopic ellipsometry measurements, and the zero-point renormalization of the band gap is found to be as large as 0.6 eV. We also calculate the temperature-dependent broadening of the direct absorption edge and find good agreement with experiment. Our work calls for a critical revision of the band structures of other carbon-based materials calculated by neglecting electron-phonon interactions.     

Anisotropy of the electron-phonon scattering rate in metals

A method of measuring the temperature dependent part of the electron scattering ratev(T) for separate groups of electrons has been developed on the basis of the radio-frequency size effect. The temperature dependence of the amplitude of a radio-frequency size effect line yields information on the probability of electron scattering averaged over the vicinity of the corresponding extremal cross section of the Fermi surface (FS). This method was applied to two problems:

1. the determination of the electron-phonon scattering rate on the FS point-by-point in noble metals; and
2. the extraction of the contribution of electron-phonon scattering collisions with electron transfering from one sheet of the FS to another to the total electron-phonon scattering rate.

     

The kinetics of low-temperature electron-phonon relaxation in a metallic film following instantaneous heating of the electrons

The theoretical analysis of experiments on pulsed laser irradiation of metallic films sputtered on insulating supports is usually based on semiphenomenological dynamical equations for the electron and phonon temperatures, an approach that ignores the nonuniformity and the nonthermal nature of the phonon distribution function. In this paper we discuss a microscopic model that describes the dynamics of the electron-phonon system in terms of kinetic equations for the electron and phonon distribution functions. Such a model provides a microscopic picture of the nonlinear energy relaxation of the electron-phonon system of a rapidly heated film. We find that in a relatively thick film the energy relaxation of electrons consists of three stages: the emission of nonequilibrium phonons by “hot” electrons, the thermalization of electrons and phonons due to phonon reabsorption, and finally the cooling of the thermalized electron-phonon system as a result of phonon exchange between film and substrate. In thin films, where there is no reabsorption of nonequilibrium phonons, the energy relaxation consists of only one stage, the first. The relaxation dynamics of an experimentally observable quantity, the phonon contribution to the electrical conductivity of the cooling film, is directly related to the dynamics of the electron temperature, which makes it possible to use the data of experiments on the relaxation of voltage across films to establish the electron-phonon and phonon-electron collision times and the average time of phonon escape from film to substrate. Zh. éksp. Teor. Fiz. 111, 2106–2133 (June 1997)     

Magnetic neutron-electron scattering; use of thef-sum rule to assess the effect of electron correlations,lattice interaction and magnetic field

We have calculated thef-sum rule for magnetic neutron scattering off electrons. Correlations alter the cross-section significantly at intermediate scattering vectors. Field induced effects are most significant at small scattering vectors, and the sum rule diverges in the limit of zero scattering vector. This feature is attributed to the field induced coupling of neutrons to the lowest energy Landau level and the collective density oscillation (hybrid mode). Our interpretation is based on an RPA calculation of the response function for neutron scattering from a magnetized plasma. The contribution to the cross-section from the electron-phonon interaction is also assessed, and it is found to increase with decreasing scattering vector.     

Anisotropic effects on the spin fluctuation thermoelectric power of uniaxial ferromagnetic metals

The Boltzmann transport equation is applied to calculate the thermoelectric power of uniaxial and cubic ferromagnetic metals. We present results about contributions taking into account anisotropy effects in the electron-spin and electron-phonon scattering cross-section.     

Electron-phonon interaction in polar solids with application to the tungsten bronzes

We investigate the interaction between electrons and lattice vibrations in polar solids taking into account their microscopic dielectric properties and constructing in a semi-phenomenological manner the nonlocal dielectric function, ?_GG'(q). The results of earlier, phenomenological theories, such as the Clausius-Mossotti formula for the macroscopic screening constant and Fröhlich's electron-phonon coupling parameter α are obtained from the RPA dielectric function when the dipole approximation is used to calculate the screening by the strongly localized valence electrons. For polar metals we also consider the screening by the free conduction electrons. We present and discuss the results of the screened electron-phonon interaction as a function of the phonon wavevector q for the sodium tungsten bronzes.     

On the dynamics of electrons in an impure metal

The inelastic scattering of the electrons of an impure metal by a screened Coulomb interaction is investigated. It is found that the rate of such an inelastic scattering is increased which can be explained by a loss of momentum conservation which in turn results from loss of translational symmetry introduced by the defects of an impure metal. Eventually, a linearised Boltzmann equation is derived for time and space dependent perturbances of the electronic distribution function. The collision integral takes into account impurity scattering as well as electron-electron and electron-phonon scattering. In an impure metal the terms corresponding to the last two processes are modified as discussed above and in a previous paper on the electron-phonon interaction.     

Wannier-Stark effect and electron-phonon interaction in macroporous silicon structures with SiO2 nanocoatings

We investigated the contribution of electron-phonon interaction to the broadening parameter Γ of the Wannier-Stark ladder levels in oxidized macroporous silicon structures with different concentration of Si-O-Si states (TO and LO phonons). The obtained value of the Wannier-Stark ladder parameter Γ is much less than the djacent level energy evaluated from giant oscillations of resonance electron scattering on the surface states. We determined the influence of broadening on the oscillation amplitude in IR absorption spectra as interaction of the surface multi-phonon polaritons with scattered electrons. This interaction transforms the resonance electron scattering in samples with low concentration of Si-O-Si states into ordinary scattering on ionized impurities for samples with high concentration of Si-O-Si states. The transformation takes place at the scattering lifetime coinciding with the period of electron oscillations in the surface electric field.     

Electron-phonon scattering in asymmetric semiconductor quantum-well structures

We calculate scattering rates of intrasubband and intersubband electronic transitions in asymmetric single quantum wells (QW's) and step QW's due to interface phonons, confined bulk-like LO phonons, and half-space LO phonons. The relative importance of the different phonon modes is analyzed. The results show that the electron-phonon scattering rates have intimate relation to the QW parameters.     

On the temperature dependent cyclotron resonance lineshape of inversion-layer electrons in Si

Unlike the electron-impurity interaction, the electron-acoustic phonon interaction generates a temperature-dependent cyclotron resonance lineshape. The difference is due to the temperature-dependent phonon distribution and the quasi-inelastic nature of the electron-phonon scattering. Calculations based on the proper connected diagram expansion are in qualitative agreement with experiments on inversion-layer electrons in Si in the temperature range 8–65 K.     

Phonon-assisted tunneling and shot noise in double barrier structures in a longitudinal magnetic field

The phonon-assisted resonant tunneling is studied for the double barrier structures in a longitudinal magnetic field. Using the scattering matrix approach with an appropriate one-particle Green's function we are able to calculate the current and the zero frequency shot noise power spectrum in a large range of the magnetic field and to any order of the electron-phonon interaction. Obtained results describe well the relevant experimental data and provide new suggestions for further examinations.     

Inelastic effects in Aharonov-Bohm molecular interferometers

Inelastic effects arising from electron-phonon coupling in molecular Aharonov-Bohm (AB) interferometers are studied using the nonequilibrium Green's function method. Results for the magnetoconductance are compared for different values of the electron-phonon coupling strength. At low-bias voltages, the coupling to the phonons does not change the lifetime and leads mainly to scattering phase shifts of the conducting electrons. As a result of these dephasing processes, the magnetoconductance of the molecular AB interferometer becomes more sensitive to the threading magnetic flux as the electron-phonon coupling is increased, opposite to the behavior of an electric gate.