Spectrum of polariton excitations of a two-dimensional electron plasma in a magnetic field

Polariton excitations associated with magnetoplasma and cyclotron oscillations in a two-dimensional (2D) electron plasma are studied. In contrast to previous works by other authors, it is concluded that there exists a low-frequency nontransmission band in the spectrum of 2D surface magnetoplasma polaritons. Radiative polariton excitations associated with nonuniform cyclotron oscillations of electrons in a 2D system are investigated. Pis’ma Zh. éksp. Teor. Fiz. 68, No. 3, 200–204 (10 August 1998)     

Magnetoplasma resonance in a GaAs/AlGaAs quantum well in a strong parallel magnetic field

The dispersion of magnetoplasma excitations in two-dimensional electron systems in a strong parallel magnetic field has been studied. A considerable increase in the electron cyclotron mass with an increase in the parallel component of magnetic field has been detected. It has been found that the cyclotron mass increment is a quadratic function of the magnetic field parallel to the interface. It has been shown that the mass anisotropy of 2D electrons induced by the parallel magnetic field reaches nearly 2.5 in B _‖ = 7 T. The energy of space quantization of the electron in the quantum well has been estimated from the magnetic field dependence of the anisotropy.     

Acoustic magnetoplasma excitations in double electron layers

The inelastic light scattering technique is used to study the spectra of intraband excitations of the quasi-two-dimensional electron system in GaAS/AlGaAs double quantum wells. A new collective mode, namely, the acoustic plasmon, is discovered and investigated. The dispersion law of the acoustic mode and its dependence on the electron density are measured. It is shown that, in a perpendicular magnetic field, a hybridization of the acoustic plasmon with the cyclotron mode takes place. The properties of the hybrid acoustic magnetoplasma collective excitations are studied.     

Cyclotron resonance in a two-dimensional semimetal based on a HgTe quantum well

Microwave cyclotron resonance of electrons and holes at the metal-to-semimetal transition in HgTe quantum wells with an inversed band structure has been investigated. The resonance has been studied by measuring microwave photoresistance in the frequency range of 35–170 GHz. The effective cyclotron masses of electrons and holes have been determined. A shift of the cyclotron resonance of the two-dimensional electrons at the metal-to-semimetal transition possibly caused by plasma effects in the two-dimensional semimetal has been discovered.     

Coherent and Incoherent Contributions to the Damping of Cyclotron Magnetoplasma Resonance for Two-Dimensional Electrons

The spectrum of resonant microwave absorption for a two-dimensional electron disk is studied by the optical detection technique. The dependence of the width of cyclotron magnetoplasma resonance on the electron density and on the size of the two-dimensional electron system is analyzed. The contributions of the coherent radiative and incoherent collision mechanisms to the relaxation of magnetoplasma excitations are measured. It is demonstrated that the ratio of the length of the electromagnetic wave and the lateral size of the twodimensional electron system is an important parameter determining the width of the resonance.     

Dimensional magnetoplasma resonance of 2D holes in (001) GaAs/AlGaAs quantum wells

Dimensional magnetoplasma resonance is observed and studied in a spatially confined, two-dimensional hole system in (001) GaAs/AlGaAs single quantum wells. From the analysis of the field dependence of the magnetoplasma resonance on the diameter of the 2D system, the semiclassical cyclotron hole mass is determined. Its value is found to be equal to 0.26m ₀ (m ₀ is the free electron mass), which considerably exceeds the theoretically predicted value. A method is proposed for a direct determination of the concentration and mobility of 2D holes from the analysis of the magnetoplasma resonance.     

Features of quasiparticle decay in 2D electronic systems with spin–orbit interaction

The dependence of the width of the spectral function of electrons and holes on the wavevector and excitation energy in a 2D electron system with spin-orbit interaction caused by structural inversion asymmetry is analyzed in the G ⁰ W ⁰ approximation. It is shown that an additional (relative to the generation of electron-hole pairs) channel of hole decay due to emission of a plasmon appears in the case of low electron density. Noticeable spin asymmetry of the spectral function width appears in the region of electron excitations.     

Universal relation between hall conductivity and the damping constant of edge magnetoplasma resonances

The spectra of edge magnetoplasma excitations in two-dimensional (2D) electron disks have been analyzed by the method of optical detection of resonant microwave absorption. The magnetic dispersion of an edge magnetoplasmon in samples with a high 2D electron density is found to be poorly reproduced by existing theoretical models. Analysis of the magnetic-field dependence of the linewidth of resonant microwave absorption for samples with various 2D electron densities shows that the inverse width of the main mode of resonant microwave absorption is universally proportional to the Hall resistance of 2D electrons.     

Properties of a two-dimensional semimetal in a strong magnetic field

A system of two-dimensional electrons and holes ha s been investigated in a strong magnetic field, when it is sufficient to take into account only the ground Landau level. It has been shown that the interaction of electrons and holes can lead to an ordered state. In this problem, the exchange interaction in electron and hole subsystems is significant. The following two cases have been considered: (a) there are one electron and one hole valleys, and at some magnetic field strength, there exists an ordered state, as in an excitonic insulator; and (b) there exist one electron and two equivalent hole valleys (as in the experiment performed by Kvon et al. [1]), and the hole system has an ordered state of the Stoner ferromagnetic type in a specific range of magnetic field strengths. The spectra of elementary excitations of the Bose and Fermi types have been obtained. The Fermi excitations have a gap in the energy spectrum, whereas the Bose excitations in the ordered states begin with zero (to these excitations there corresponds an electric dipole moment). The self-consistent field approximation has been used, which is exact when the numbers of electrons and holes are equal to each other.     

Plasma waves in a two-dimensional electron system laterally screened by a metallic gate

The dispersion of magnetoplasma and plasma excitations in two-dimensional electron systems, whose edges are formed by a voltage applied to a metallic gate, has been studied. A substantial decrease in the plasma wave frequency as compared to the plasma frequency measured in the etched mesas with the same geometry, size, and electron density has been observed. The dependence of the observed frequency softening on the structure size has been studied and the laterally screened plasma excitation has been shown to violate the square-root dispersion relation.     

On the phase diagram of a two-dimensional electron–hole system

The phase diagram for a system of spatially separated electrons and holes in coupled quantum wells or graphene double layers is studied in the framework of a BCS-like mean-field approach and a Landau expansion in terms of the pairing order parameter. We find a second order transition between an electron–hole plasma and a BCS phase, as well as a first-order transition between the BCS phase and a bosonic Mott phase of tightly bound electron–hole pairs without phase coherence. The electron–hole plasma exists at low and at high densities for weak interaction, the BCS phase at moderate density and the Mott phase at high density and strong interaction.     

Creation of electronic excitations and defects by vuv radiation (6-40 eV) in wide-gap solids

The processes of multiplication of electronic excitations (MEE), connected with the creation of secondary excitons or electron-hole (e-h) pairs by hot conduction electrons, are realized in wide-gap metal halides and oxides. In oxides, secondary e-h pairs can be also formed by 27-40 v eV photons due to L 1 VV Auger transitions (with the participation of 2s oxygen holes). The excitation spectra of luminescence and the creation spectra of electron F centres or hole V centres have been measured for Na 6 Al 6 Si 6 O 24 (NaI) 2x sodalites and MgO:Be, respectively, at 8-80 v K. A high local density of excitations has been revealed under MEE conditions in KBr and Br sodalites with self-trapping excitons and holes.     

Electrons and holes in HgTe and Hg0.82Cd0.18Te with controlled deviations from stoichiometry

The deviations from the stoichiometric composition of HgTe and Hg_0.82Cd_0.18Te crystals have been controlled by heat treatment under Hg vapor pressure. The magnetic field dependence of the Hall coefficient always shows the presence of two different sets of electrons and one set of holes. A low mobility electron is shown to belong to the conduction band. Vapor pressure dependence of hole concentration in HgTe shows that the concentration of nonstoichiometric defects decreases with increasing Hg vapor pressure, but the hole concentration is always higher than the electron concentration. In the case of Hg_0.82Cd_0.18Te, the electron concentration exceeds the hole concentration at high Hg vapor pressures. The dependence of the conduction band electron mobility in HgTe upon carrier density shows that the scattering by holes and impurities is predominant. In Hg_0.82Cd_0.18Te, however, optical phonon scattering is dominant when the deviation from stoichiometry is small and the effect of residual impurities can be neglected, and scattering by holes is dominant when the hole concentration is over $\text{10}{}^{17}\text{cm}{}^3$.     

Optically detected cyclotron resonance in Ge and Si exchange interaction in impact dissociation

We have investigated optically detected cyclotron resonance (ODCR) and ordinary cyclotron resonance (CR) under the same condition, in Ge and Si, which include both high-purity and doped samples. In impact dissociation processes, which are the origin of ODCR, donorbound excitons have larger cross section for impinging electrons than for holes, and conversely, acceptor- bound excitons have larger cross section for holes than for electrons. Moreover, the ratio of impact dissociation cross section for holes to that for electrons varies with the number of excitons bound to an impurity. These phenomena are understood primarily in terms of exchange interaction between impinging carriers and constituents of bound excitons. In addition, it is found that the relative intensity of hole cyclotron resonance against electron resonance is larger in ODCR than in CR. This is understood in terms of exchange interaction by taking the many valley nature of the conduction band into account.     

Cyclotron resonance in the InAs/GaSb heterostructure in an inclined magnetic field

The mechanism of cyclotron resonance line splitting in the InAs/GaSb heterostructure in an inclined magnetic field has been studied experimentally and theoretically. It is shown that the admixing of electron and hole states leads to anticrossing of the Landau levels and, hence, to splitting of the cyclotron resonance line. In the case of an inclined magnetic field, the splitting is not observed, which is explained by the suppression of the admixing of electron and hole states due to the occurrence of an additional barrier for electrons and holes given a longitudinal magnetic field component.     

Observation of plasma and magnetoplasma resonances of two-dimensional electrons in a single MgZnO/ZnO heterojunction

The magnetoluminescence of the two-dimensional electron system in a single Mg _x Zn_{1 ? x} O/ZnO hetero-junction (x = 0.02) at a temperature of 0.3 K in magnetic fields up to 14 T has been studied. The concentration of two-dimensional electrons in the structure under study has been determined from the oscillations of the luminescence intensity as a function of the magnetic field. The value thus obtained is close to the one derived from transport measurements. The resonance corresponding to plasma excitations of two-dimensional electrons has been observed using optical detection of microwave absorption. In a magnetic field, the lower branch of magnetoplasma excitations, which corresponds to the propagation of edge magnetoplasmons in a structure with nearly square geometry, has been observed and investigated.     

Barrier D − complexes in a high-mobility two-dimensional electron system

The cyclotron excitation spectrum of selectively doped AlGaAs/GaAs quantum wells with a high (up to 2 × 10⁷ cm²/(V s)) mobility of electrons has been studied by means of the Raman scattering. The lines of the Raman scattering by the excitations of D ^? complexes, the objects in which two electrons localized in a quantum well are coupled to a charged impurity in a barrier, have been detected and identified. Spin-singlet D ^? complexes have been shown to exist in the entire range of the electron filling factor, from v → 0 to v = 2, owing to the specificity of the Coulomb interaction in two-dimensional systems. The excitation energies of the singlet D ^? complexes have been studied as functions of the electron density, quantum well width, and magnetic field.     

Magnetoplasma resonance of exciton drop system in germanium

Two new absorptions which are believed at least partially connected with magnetoplasma resonance within high density exciton drops are observed below 2.2.K in 35GHz cyclotron resonance at germanium under the configuration that E ∥ 〈100〉 and H ∥ 〈001〉. One of them appears very close to the light hole cyclotron resonance signal and is qualitatively interpreted in terms of a simplified magnetoplasma theory, while the other shoots up near zero magnetic field and remains yet unexplained.     

Two types of fundamental luminescence of ionization-passive electrons and holes in optical dielectrics—Intraband-electron and interband-hole luminescence (theoretical calculation and comparison with experiment)

A short high-power pulse of ionizing radiation creates a high concentration of nonequilibrium electrons and holes in a dielectric. They quickly lose their energy, generating a multiplicity of secondary quasiparticles: electron—hole pairs, excitons, plasmons, phonons of all types, and others. When the kinetic energy of an electron becomes less that some value E_Δ≈(1.3-2)E_g it loses the ability to perform collisional ionization and electron excitations of the dielectric medium. Such an electron is said to be ionization-passive. It relaxes to the bottom of the lower conduction band by emitting phonons. Similarly a hole becomes ionization-passive when it “floats up” above some level E_H and loses the ability for Auger ionization of the dielectric medium. It continues to float upward to the ceiling of the upper valance band only by emitting phonons. The concentrations of ionization-passive electrons and holes are larger by several orders of magnitude than those of the active electrons and holes and consequently make of a far larger contribution to many kinetic processes such as luminescence. Intraband and interband quantum transitions make the greatest contribution to the fundamental (independent of impurities and intrinsic defects) electromagnetic radiation of ionization-passive electrons and holes. Consequently the brightest types of purely fundamental luminescence of strongly nonequilibrium electrons and holes are intraband and interband luminescence. These forms of luminescence, discovered relatively recently, carry valuable information on the high-energy states of the electrons in the conduction band and of the holes in the valence band of a dielectric. Experimental investigations of these types of luminescence were made, mainly on alkali halide crystals which were excited by nanoseconal pulses of high-current-density electrons and by two-photon absorption of the ultraviolet harmonics of pulsed laser radiation beams of nanosecond and picosecond duration. The present article gives the results of theoretical calculations of the spectra and other characteristics of intraband electron and interband hole luminescence which are compared with the experimental data. Institute of High-Current Electronics, Sibrian Branch of the Russian Academy of Sciences, Polytechnic University, Tomsk. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 13–41, November, 1997.