Noise behavior of amorphous GexSi1−xOy for microbolometer applications

High resistivity sputtered a-Ge_xSi_1−xO_y compound was investigated for application to microbolometer fabrication for thermal imaging. Noise behavior of the fabricated bolometers was measured, showing no evidence of random telegraph switching (RTS) noise. 1/f noise was measured at several measuring currents, resulting in a 1/f noise factor of 2.9 × 10⁻¹¹ that can be used for further design and modeling.     

1-forms over the moduli space of irreducible connections defined by the spectrum of Dirac operators

Let (P) be the moduli space of irreducible connections of a G-principal bundle P over a closed Riemannian spin manifold M. Let D_A be the Dirac operator of M coupled to a connection A of P and f a smooth function on M. We consider a smooth variation A(u) of A with tangent vector ω and denote T_ω:= (D_A(u)−f) (u=0. The coefficients of the asymptotic expansion of trace (T_ω · e^-t(D_A−f)2) near t=0 define 1-forms a^(k)_f, K=0, 1, 2, … on (P). In this paper we calculate aa⁽⁰⁾_f, a⁽¹⁾_f, a⁽²⁾_f and study some of their properties. For instance using the 1-form a⁽²⁾_f for suitable functions f we obtain a foliation of codimension 5 of the space of G-instantons of S⁴.     

Transport in solid oxide porous electrodes: Effect of gas diffusion

We extend our previous treatment of a mixed ionic electronic conductor membrane, consisting of a porous cathode and anode separated by a thin non-porous layer, to the case where mass transport of molecules in the porous electrodes can be the rate-limiting step. The linearized transport equations for the ion-hole pairs in the solid and of the gas molecules in the pores are characterized by the length scales L_P = √L_d(1 − φ)/Sτ_s and L_g = 2L_p√[τ_sφ/τ(1 − φ)][D_gc_g/D_IEc_i] respectively, where L_d = D_IE/K is the length scale that determines the transition from diffusion limited to surface exchange limited transport in the non-porous electrodes, K is the surface exchange coefficient, D_IE and D_g are the diffusion coefficients of the ion-hole pairs and of the molecules, c_i and c_g are the concentrations of the ions and molecules, S is the pore surface area per unit volume, φ the porosity and τ_s and τ the tortuosities of the solid and pore phases respectively. When L_g L_p, which is the case treated previously, the rate-limiting step in the transport is ionic diffusion and surface exchange. Enhancements in oxygen ion current of two orders in magnitude, over non-porous electrodes, are in principle achievable with porous perovskite MIEC having surface area s = 10⁶ cm⁻¹. When L_g L_p the rate-limiting step is mass transport in the pores and the enhancement in ion current is substantially reduced.     

Analysis of frequency-dependent series resistance and interface states of In/SiO2/p-Si (MIS) structures

In this work, the investigation of the interface state density and series resistance from capacitance–voltage (C–V) and conductance–voltage (G/ω−V) characteristics in In/SiO₂/p-Si metal–insulator–semiconductor (MIS) structures with thin interfacial insulator layer have been reported. The thickness of SiO₂ film obtained from the measurement of the oxide capacitance corrected for series resistance in the strong accumulation region is 220 Å. The forward and reverse bias C–V and G/ω−V characteristics of MIS structures have been studied at the frequency range 30 kHz–1 MHz at room temperature. The frequency dispersion in capacitance and conductance can be interpreted in terms of the series resistance (R_s) and interface state density (D_it) values. Both the series resistance R_s and density of interface states D_it are strongly frequency-dependent and decrease with increasing frequency. The distribution profile of R_s–V gives a peak at low frequencies in the depletion region and disappears with increasing frequency. Experimental results show that the interfacial polarization contributes to the improvement of the dielectric properties of In/SiO₂/p-Si MIS structures. The interface state density value of In/SiO₂/p-Si MIS diode calculated at strong accumulation region is 1.11×10¹² eV⁻¹ cm⁻² at 1 MHz. It is found that the calculated value of D_it (≈10¹² eV⁻¹ cm⁻²) is not high enough to pin the Fermi level of the Si substrate disrupting the device operation.     

Annealing dependence of magnetic properties in nanostructured Sm0.5Y0.5Co5

Nanocrystalline Sm_0.5Y_0.5Co₅ powders with high coercivity H_C and enhanced remanence M_r were prepared by mechanical milling and subsequent annealing. Annealing temperatures T ranging from 973 to 1173 K, and times t ranging from 1 to 5 min were used. X-ray diffraction (XRD) and DC-magnetization measurements were carried out to study the microstructure and magnetic properties of these samples. XRD patterns demonstrate that the average grain size D of the nanocrystalline powders depends on the annealing temperature T and time t: D ranges from 11 nm (for T=973 K and t=1 min) to 93 nm (for T=1173 K and t=5 min). Magnetic measurements performed at room temperature indicate high coercivity values (H_C>955 kA/m), and enhanced remanence (M_r/M_max>0.5) for all samples. A strong annealing-induced grain size dependence of these magnetic properties was found.     

氢化非晶硅薄膜晶体管的低频噪声特性

针对氢化非晶硅薄膜晶体管(hydrogenated amorphous silicon thin film transistor,a-Si:H TFT)的低频噪声特性展开实验研究.由测量结果可知,a-Si:H TFT的低频噪声特性遵循1/f~γ(f为频率,γ≈0.92)的变化规律,主要受迁移率随机涨落效应的影响.基于与迁移率涨落相关的载流子数随机涨落模型(?N-?μ模型),在考虑源漏接触电阻、局域态俘获及释放载流子效应等情况时,对器件低频噪声特性随沟道电流的变化进行分析与拟合.基于a-Si:H TFT的亚阈区电流-电压特性提取器件表面能带弯曲量与栅源电压之间的关系,通过沟道电流噪声功率谱密度提取a-Si:H TFT有源层内局域态密度及其分布.实验结果表明:局域态在禁带内随能量呈e指数变化,两种缺陷态在导带底密度分别约为6.31×10~(18)和1.26×10~(18)cm~(-3)·eV~(-1),特征温度分别约为192和290 K,这符合非晶硅层内带尾态密度及其分布特征.最后提取器件的平均Hooge因子,为评价非晶硅材料及其稳定性提供参考.     

Mo,Ta, W在NixAl1-x(x=0.25,0.5,0.75) 中的择优占位

用多体势结合分子动力学计算了L1₂型NiAl₃, L1₂型Ni₃Al, L1₀型NiAl和B₂ 型NiAl的晶格常数, 结合能以及合金形成热; 分析了结构性点缺陷在上述四种合金中的存在形式; 在此基础上研究了合金化元素Mo, Ta, W在Ni_xAl_1-x(x=0.25,0.5,0.75)中的择优占位行为. 计算结果表明: 对于四种结构的Ni-Al合金, 偏离理想化学配比时,主要的结构缺陷形式是反位置; 根据占位能最小化, 第三组元元素Mo, Ta, W在上述四种Ni-Al中都显著优先占据Al格位. 关键词： 多体势 Ni-Al合金 占位     

具有分形结构的SiC/SiO2界面的粗糙散射

用结构函数的方法建立了SiC粗糙表面的分形模型,用rms粗糙度Δ,分形维数D,以及相关长度L三个参量来刻画表面高度的自协方差函数,并提出了参数的计算方法.在此分形模型的基础上,能计算出SiC/SiO₂界面对沟道电子的粗糙散射.     

Adatom dynamics in a periodic potential under time-periodic bias

We study the dynamics of a Brownian particle in a 1D external potential under the influence of a time-periodic bias with an amplitude small with respect to the potential barriers. We consider both a periodic potential corresponding to a smooth crystal surface and a regular array of steps with an extra Ehrlich–Schwoebel barrier for step crossing. For the smooth surface, we extend our previous work in the high friction limit to the low friction case and find that the oscillating bias enhances the diffusion coefficient D_T due to the broadening of the jump length distribution. In the case of a stepped surface with terraces of length L, the bias induces a non-zero average current J_ave in the direction of descending steps as long as the driving frequency is smaller than a threshold frequency Ω_T≈L⁻¹. The current shows a maximum as a function of temperature for fixed L. However, no evidence of stochastic resonance type of enhancement can be found either in D_T or J_ave.     

The wavelet response as a multiscale characterization of scattering processes at granular interfaces

We perform a multiscale analysis of the backscattering properties of a complex interface between water and a layer of randomly arranged glass beads with diameter D = 1 mm. An acoustical experiment is done to record the wavelet response of the interface in a large frequency range from λ/D = 0.3 to λ/D = 15. The wavelet response is a physical analog of the mathematical wavelet transform which possesses nice properties to detect and characterize abrupt changes in signals. The experimental wavelet response allows to identify five frequency domains corresponding to different backscattering properties of the complex interface. This puts quantitative limits to the validity domains of the models used to represent the interface and which are flat elastic, flat visco-elastic, rough random half-space with multiple scattering, and rough elastic from long to short wavelengths respectively. A physical explanation based on Mie scattering theory is proposed to explain the origin of the five frequency domains identified in the wavelet response.     

Surface diffusion of dysprosium on the W(1 1 1) facet

Diffusion of dysprosium on the (1 1 1) facet of a tungsten micromonocrystal was investigated by means of spectral analysis of field emission current fluctuations. The experimental spectral density functions of the current fluctuations were analysed by using Gesley and Swanson’s theoretical spectral density function, which enables to determine the surface diffusion coefficient D for dysprosium. Derived from the temperature dependence of D, the diffusion activation energy E is presented for some Dy coverages θ_(1 1 1). In the temperature range 400–600 K, the E first drops from 1.25 eV per atom at θ₍₁₁₁₎≈0.25 ML to 0.48 eV per atom at θ₍₁₁₁₎≈1 ML (corresponding to the minimum of the work function of the system), then increases to 1.03 eV per atom at θ₍₁₁₁₎≈1.3 ML. The results are discussed from the aspects of the substrate structure and interaction in the adsorbed layer.     

1/f-type fluctuation of electron transmission in one-dimensional disordered systems

A universal feature of 1/f-type fluctuation is numerically observed in the system-size n dependence of the transmission amplitude t_n in various one-dimensional disordered systems. The power spectrum P(f) of the transmission coefficient T(n)=|t_n|² exhibits the power law of 1/f², irrespective to the type of disorder of the system whether it is of short-range or of long-range correlation. That of the phase θ_t(n) of t_n also does the universal power law of 1/f^1.4.     

Itinerant to relocalized transition of f electrons in the Kondo insulator CeRu4Sn6

The three-dimensional electronic structure and the nature of Ce 4f electrons of the Kondo insulator CeRu₄Sn₆ are investigated by angle-resolved photoemission spectroscopy, utilizing tunable photon energies. Our results reveal (i) the three-dimensional k-space nature of the Fermi surface, (ii) the localized-to-itinerant transition of f electrons occurs at a much high temperature than the hybridization gap opening temperature, and (iii) the “relocalization” of itinerant f-electrons below 25 K, which could be the precursor to the establishment of magnetic order.     

Electrical characterization of low temperature deposited TiO2 films on strained-SiGe layers

Thin films of titanium dioxide have been deposited on strained Si_0.82Ge_0.18 epitaxial layers using titanium tetrakis-isopropoxide [TTIP, Ti(O-i-C₃H₇)₄] and oxygen by microwave plasma enhanced chemical vapor deposition (PECVD). The films have been characterized by X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FTIR). Dielectric constant, equivalent oxide thickness (EOT), interface state density (D_it), fixed oxide charge density (Q_f/q) and flat-band voltage (V_FB) of as-deposited films were found to be 13.2, 40.6 Å, 6×10¹¹ eV⁻¹ cm⁻², 3.1×10¹¹ cm⁻² and −1.4 V, respectively. The capacitance–voltage (C–V), current–voltage (I–V) characteristics and charge trapping behavior of the films under constant current stressing exhibit an excellent interface quality and high dielectric reliability making the films suitable for microelectronic applications.     

Correlation between the exchange bias and the degree of ordering of antiferromagnetic layer in PtMn/Co–Fe bilayers

Correlation between the unidirectional anisotropy constant, J_K, and the degree of ordering of PtMn layer was investigated for Pt₅₅Mn₄₅/Co₉₀Fe₁₀ bilayer, as a function of the annealing time and the PtMn layer thickness, d_AF. As a result, we found the linear relations between J_K and the degree of ordering, f_FCT·S, in the cases of the bilayers with d_AF=5–50 nm. From the extrapolation of the linear relations to f_FCT·S=1, meaning the perfect ordering of PtMn layer, we obtained the attainable value of J_K and the intrinsic critical thickness of the PtMn layer to be 0.26 erg/cm² and 6 nm, respectively.     

Study on electroluminescence processes in dye-doped organic light-emitting diodes

Electroluminescence (EL) mechanism of dye-doped organic light-emitting diodes (OLEDs) was investigated by using three familiar fluorescent dyes, i.e., 5,12-Dihydro-5,12-dimethylquino [2,3-b]acridine-7,14-dione (DMQA), 4-(dicyanomethylene)-2-t-butyl-6(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB), and 5,6,11,12-tetraphenylnaphthacene (Rubrene). EL spectra of the doped devices with structure of indium tin oxide (ITO)/N,N′-bis-(1-naphthyl)-N,N′-diphenyl-1,1′-biphenyl-4,4′- diamine (NPB) (40 nm)/tris-(8-hydroxyquinolate)-aluminum (Alq₃) (x nm, x=0–40 nm)/dye: Alq₃ (weight ratio≈1%, 2 nm)/Alq₃ (48−x nm)/MgAg indicated that direct carrier trapping (DCT) process dominated light emission of devices. As a result, investigation of carrier-recombination site via doping, which is conventionally applied in OLEDs, is questionable since the doping site and the dopant itself may significantly influence the carrier-recombination process in the doped devices.     

The influence of different fabrication processes on characteristics of excess Bi2O3-doped 0.95 (Na0.5Bi0.5)TiO3–0.05 BaTiO3 ceramics

In this study, we will develop the influences of the excess x wt% (x=0, 1, 2, and 3) Bi₂O₃-doped and the different fabricating process on the sintering and dielectric characteristics of 0.95 (Na_0.5Bi_0.5)TiO₃–0.05 BaTiO₃ ferroelectric ceramics with the aid of SEM and X-ray diffraction patterns, and dielectric–temperature curves. The 0.95 (Na_0.5Bi_0.5)TiO₃–0.05 BaTiO₃+x wt% Bi₂O₃ ceramics are fabricated by two different processes. The first process is that (Na_0.5Bi_0.5)TiO₃ composition is calcined at 850 °C and BaTiO₃ composition is calcined at 1100 °C, then the calcined (Na_0.5Bi_0.5)TiO₃ and BaTiO₃ powders are mixed in according to 0.95 (Na_0.5Bi_0.5)TiO₃–0.05 BaTiO₃+x wt% Bi₂O₃ compositions. The second process is that the raw materials are mixed in accordance to the 0.95 (Na_0.5Bi_0.5)TiO₃–0.05 BaTiO₃+x wt% Bi₂O₃ compositions and then calcining at 900 °C. The sintering process is carried out in air for 2 h from 1120 to 1240 °C. After sintering, the effects of process parameters on the dielectric characteristics will be developed by the dielectric–temperature curves. Dielectric–temperature properties are also investigated at the temperatures of 30–350 °C and at the frequencies of 10 kHz–1 MHz.     

Understanding DsJ(2317)

We analyze the hadronic and radiative decay modes of the recently observed D_sJ(2317) meson, in the hypothesis that it can be identified with the scalar state of spectrum (D_s0). The method is based on heavy quark symmetries and vector meson dominance ansatz. We find that the hadronic isospin violating mode D_s0→D_sπ⁰ is enhanced with respect to the radiative mode D_s0→D_s^*γ. The estimated width of the meson is Γ(D_s0)7 keV.     

Investigation of the static and dynamic magnetic properties of CoFe2O4 nanoparticles

We have investigated the magnetic behavior of cobalt ferrite nanoparticles with a mean diameter of 7.2 nm. AC susceptibility of colloidal cobalt ferrite nanoparticles was measured as a function of temperature T from 2 to 300 K under zero external DC field for frequencies ranging from f=10 to 10,000 Hz. A prominent peak appears in both χ′ and χ″ as a function of T. The peak temperature T₂ of χ″ depends on f following the Vogel–Fulcher law. The particles show superparamagnetic behavior at room temperature, with transition to a blocked state at T_B^m94 K in ZFC and 119 K in AC susceptibility measurements, respectively, which depends on the applied field. The saturation magnetization and the coercivity measured at 4.2 K are 27.3 emu/g and 14.7 kOe, respectively. The particle size distribution was determined by fitting a magnetization curve obtained at 295 K assuming a log-normal size distribution. The interparticle interactions are found to influence the energy barriers yielding an enhancement of the estimated magnetic anisotropy, K=6×10⁶ erg/cm³. Mössbauer spectra obtained at higher temperatures show a gradual collapse of the magnetic hyperfine splitting typical for superparamagnetic relaxation. At 4.2 K, the Mössbauer spectrum was fitted with two magnetic subspectra with internal fields H_int of 490, 470 and 515 kOe, corresponding to Fe³⁺ ions in A and B sites.     

Redshift drift constraints on f(T) gravity

We explore the impact of the Sandage−Loeb (SL) test on the precision of cosmological constraints for f(T) gravity theories. The SL test is an important supplement to current cosmological observations because it measures the redshift drift in the Lyman-α forest in the spectra of distant quasars, covering the “redshift desert” of 2≲z≲5. To avoid data inconsistency, we use the best-fit models based on current combined observational data as fiducial models to simulate 30 mock SL test data. We quantify the impact of these SL test data on parameter estimation for f(T) gravity theories. Two typical f(T) models are considered, the power-law model f(T)_PL and the exponential-form model f(T)_EXP. The results show that the SL test can effectively break the existing strong degeneracy between the present-day matter density Ω_m and the Hubble constant H₀ in other cosmological observations. For the considered f(T) models, a 30-year observation of the SL test can improve the constraint precision of Ω_m and H₀ enormously but cannot effectively improve the constraint precision of the model parameters.